Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (73966) > Сторінка 314 з 1233
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DSS5240TQ-7 | Diodes Incorporated |
Description: TRANS PNP 40V 2A SOT-23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 730 mW Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMSZ5240BQ-7-F | Diodes Incorporated |
Description: DIODE ZENER 10V 370MW SOD123Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 17 Ohms Supplier Device Package: SOD-123 Part Status: Active Power - Max: 370 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 3 µA @ 8 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 38545 шт: термін постачання 21-31 дні (днів) |
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SBR10E45P5-7 | Diodes Incorporated |
Description: DIODE SBR 45V 10A POWERDI5Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 10A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A Current - Reverse Leakage @ Vr: 280 µA @ 45 V |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
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DMP2002UPS-13 | Diodes Incorporated |
Description: MOSFET P-CH 20V 60A PWRDI5060-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 585 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12826 pF @ 10 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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DMP6050SSD-13 | Diodes Incorporated |
Description: MOSFET 2P-CH 60V 4.8A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.8A Input Capacitance (Ciss) (Max) @ Vds: 1293pF @ 30V Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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DMT8012LK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 80V 44A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V Power Dissipation (Max): 2.7W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V |
на замовлення 207500 шт: термін постачання 21-31 дні (днів) |
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DMTH8012LK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 80V 50A TO252 |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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DMTH8012LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 80V 9.5A PWRDI5060-8 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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DT6250-06MR-13 | Diodes Incorporated |
Description: TVS DIODE 5VWM 10VC 8-MSOPPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 85°C (TA) Applications: General Purpose Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: 8-MSOP Unidirectional Channels: 6 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 10V (Typ) Power Line Protection: Yes |
на замовлення 92500 шт: термін постачання 21-31 дні (днів) |
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SBRT10U60D1-13 | Diodes Incorporated |
Description: DIODE SBR 60V 10A TO2523Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 10A Supplier Device Package: TO-252-3 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A Current - Reverse Leakage @ Vr: 400 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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APT17NTR-G1 | Diodes Incorporated |
Description: TRANS NPN 480V 0.05A SOT-23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 20V Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 480 V Power - Max: 200 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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D5V0M5B6LP16-7 | Diodes Incorporated |
Description: TVS DIODE 5VWM 14VC U-DFN1616-6Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 35pF @ 1MHz Current - Peak Pulse (10/1000µs): 12A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: U-DFN1616-6 Bidirectional Channels: 5 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 14V Power - Peak Pulse: 130W Power Line Protection: No |
на замовлення 42000 шт: термін постачання 21-31 дні (днів) |
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DESD5V0U1BA-7 | Diodes Incorporated |
Description: TVS DIODE 5VWM 7.2VC SOD323Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 2.9pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SOD-323 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 7.2V (Typ) Power Line Protection: No Part Status: Active |
на замовлення 177000 шт: термін постачання 21-31 дні (днів) |
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DMHC10H170SFJ-13 | Diodes Incorporated |
Description: MOSFET 2N/2P-CH 100V 2.9A 12VDFNPackaging: Tape & Reel (TR) Package / Case: 12-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N and 2 P-Channel (Full Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.3A Input Capacitance (Ciss) (Max) @ Vds: 1167pF @ 25V Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: V-DFN5045-12 Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DMP1011UCB9-7 | Diodes Incorporated |
Description: MOSFET P-CH 8V 10A U-WLB1515-9Packaging: Tape & Reel (TR) Package / Case: 9-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 2A, 4.5V Power Dissipation (Max): 890mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: U-WLB1515-9 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 4 V |
на замовлення 621000 шт: термін постачання 21-31 дні (днів) |
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DMP6110SVT-7 | Diodes Incorporated |
Description: MOSFET P-CH 60V 7.3A TSOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TSOT-23-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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SBRT4U10LP-7 | Diodes Incorporated |
Description: DIODE SBR 10V 4A U-DFN2020-2 |
на замовлення 300012000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SBRT4U15LP-7 | Diodes Incorporated |
Description: DIODE SBR 15V 4A U-DFN2020-2 Packaging: Tape & Reel (TR) Package / Case: 2-UDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 4A Supplier Device Package: U-DFN2020-2 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 15 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 15 A Current - Reverse Leakage @ Vr: 100 µA @ 15 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SBRT4U30LP-7 | Diodes Incorporated |
Description: DIODE SBR 30V 4A U-DFN2020-2 |
на замовлення 132000 шт: термін постачання 21-31 дні (днів) |
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ZXTR2112F-7 | Diodes Incorporated |
Description: IC REG LINEAR 12V 15MA SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 15mA Operating Temperature: -65°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 360 µA Voltage - Input (Max): 60V Number of Regulators: 1 Supplier Device Package: SOT-23-3 Voltage - Output (Min/Fixed): 12V Grade: Automotive Part Status: Active PSRR: 50dB (100Hz) Current - Supply (Max): 6 mA Qualification: AEC-Q101 |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
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D3V3L2B3LP10-7 | Diodes Incorporated |
Description: TVS DIODE 3.3VWM 7V X2DFN10103Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 10pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: X2-DFN1010-3 Bidirectional Channels: 2 Voltage - Breakdown (Min): 3.8V Voltage - Clamping (Max) @ Ipp: 7V Power - Peak Pulse: 35W Power Line Protection: No Part Status: Active |
на замовлення 250000 шт: термін постачання 21-31 дні (днів) |
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D5V0F2B3LP10-7 | Diodes Incorporated |
Description: TVS DIODE 5.5VWM 12VC X2-DFN1010 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SBR10E45P5-13 | Diodes Incorporated |
Description: DIODE SBR 45V 10A POWERDI5Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 10A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A Current - Reverse Leakage @ Vr: 280 µA @ 45 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SBRT3M60SA-13 | Diodes Incorporated |
Description: DIODE SBR 60V 3A SMA Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 3A Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 590 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SBRT3U60SA-13 | Diodes Incorporated |
Description: DIODE SBR 60V 3A SMA Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 3A Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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D5V0L1B2DLP3-7 | Diodes Incorporated |
Description: TVS DIODE 5VWM 14VC X3ESN06032Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 15pF @ 1MHz Current - Peak Pulse (10/1000µs): 6A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: X3-ESN0603-2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 14V Power - Peak Pulse: 84W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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D5V0M1U2S9-7 | Diodes Incorporated |
Description: TVS DIODE 5.5VWM 12VC SOD923Packaging: Tape & Reel (TR) Package / Case: SOD-923 Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 54pF @ 1MHz Current - Peak Pulse (10/1000µs): 9A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: SOD-923 Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.2V Voltage - Clamping (Max) @ Ipp: 12V Power - Peak Pulse: 108W Power Line Protection: No |
на замовлення 432000 шт: термін постачання 21-31 дні (днів) |
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DMP6110SVT-13 | Diodes Incorporated |
Description: MOSFET P-CH 60V 7.3A TSOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TSOT-23-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SBRT3U45SAF-13 | Diodes Incorporated |
Description: DIODE SBR 45V 3A SMAFPackaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 3A Supplier Device Package: SMAF Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 480 mV @ 3 A Current - Reverse Leakage @ Vr: 150 µA @ 45 V |
на замовлення 140000 шт: термін постачання 21-31 дні (днів) |
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SBR10E45P5-7 | Diodes Incorporated |
Description: DIODE SBR 45V 10A POWERDI5Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 10A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A Current - Reverse Leakage @ Vr: 280 µA @ 45 V |
на замовлення 7474 шт: термін постачання 21-31 дні (днів) |
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DMP2002UPS-13 | Diodes Incorporated |
Description: MOSFET P-CH 20V 60A PWRDI5060-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 585 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12826 pF @ 10 V |
на замовлення 12609 шт: термін постачання 21-31 дні (днів) |
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DMP6050SSD-13 | Diodes Incorporated |
Description: MOSFET 2P-CH 60V 4.8A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.8A Input Capacitance (Ciss) (Max) @ Vds: 1293pF @ 30V Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
на замовлення 22326 шт: термін постачання 21-31 дні (днів) |
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DMT8012LK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 80V 44A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V Power Dissipation (Max): 2.7W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V |
на замовлення 210863 шт: термін постачання 21-31 дні (днів) |
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DMTH8012LK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 80V 50A TO252 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMTH8012LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 80V 9.5A PWRDI5060-8 |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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DT6250-06MR-13 | Diodes Incorporated |
Description: TVS DIODE 5VWM 10VC 8-MSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 85°C (TA) Applications: General Purpose Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: 8-MSOP Unidirectional Channels: 6 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 10V (Typ) Power Line Protection: Yes |
на замовлення 94197 шт: термін постачання 21-31 дні (днів) |
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SBRT10U60D1-13 | Diodes Incorporated |
Description: DIODE SBR 60V 10A TO2523Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 10A Supplier Device Package: TO-252-3 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A Current - Reverse Leakage @ Vr: 400 µA @ 60 V |
на замовлення 1054 шт: термін постачання 21-31 дні (днів) |
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D5V0M5B6LP16-7 | Diodes Incorporated |
Description: TVS DIODE 5VWM 14VC U-DFN1616-6Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 35pF @ 1MHz Current - Peak Pulse (10/1000µs): 12A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: U-DFN1616-6 Bidirectional Channels: 5 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 14V Power - Peak Pulse: 130W Power Line Protection: No |
на замовлення 44845 шт: термін постачання 21-31 дні (днів) |
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DESD5V0U1BA-7 | Diodes Incorporated |
Description: TVS DIODE 5VWM 7.2VC SOD323Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 2.9pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SOD-323 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 7.2V (Typ) Power Line Protection: No Part Status: Active |
на замовлення 178475 шт: термін постачання 21-31 дні (днів) |
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DMHC10H170SFJ-13 | Diodes Incorporated |
Description: MOSFET 2N/2P-CH 100V 2.9A 12VDFNPackaging: Cut Tape (CT) Package / Case: 12-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N and 2 P-Channel (Full Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.3A Input Capacitance (Ciss) (Max) @ Vds: 1167pF @ 25V Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: V-DFN5045-12 Part Status: Active |
на замовлення 3432 шт: термін постачання 21-31 дні (днів) |
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DMP1011UCB9-7 | Diodes Incorporated |
Description: MOSFET P-CH 8V 10A U-WLB1515-9Packaging: Cut Tape (CT) Package / Case: 9-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 2A, 4.5V Power Dissipation (Max): 890mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: U-WLB1515-9 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 4 V |
на замовлення 623953 шт: термін постачання 21-31 дні (днів) |
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DMP6110SVT-7 | Diodes Incorporated |
Description: MOSFET P-CH 60V 7.3A TSOT26Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TSOT-23-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V |
на замовлення 26374 шт: термін постачання 21-31 дні (днів) |
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SBRT4U10LP-7 | Diodes Incorporated |
Description: DIODE SBR 10V 4A U-DFN2020-2 |
на замовлення 300012000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SBRT4U30LP-7 | Diodes Incorporated |
Description: DIODE SBR 30V 4A U-DFN2020-2 |
на замовлення 134990 шт: термін постачання 21-31 дні (днів) |
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SBRT6U10LP-7 | Diodes Incorporated |
Description: DIODE SBR 10V 6A U-DFN3030-8 |
на замовлення 2880 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SBRT6U20LP-7 | Diodes Incorporated |
Description: DIODE SBR 20V 6A U-DFN3030-8 |
на замовлення 645 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SBRT6U45LP-7 | Diodes Incorporated |
Description: DIODE SBR 45V 6A U-DFN3030-8 |
на замовлення 627 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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ZXTR2112F-7 | Diodes Incorporated |
Description: IC REG LINEAR 12V 15MA SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 15mA Operating Temperature: -65°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 360 µA Voltage - Input (Max): 60V Number of Regulators: 1 Supplier Device Package: SOT-23-3 Voltage - Output (Min/Fixed): 12V Part Status: Active PSRR: 50dB (100Hz) Current - Supply (Max): 6 mA Grade: Automotive Qualification: AEC-Q101 |
на замовлення 35832 шт: термін постачання 21-31 дні (днів) |
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AP1695-20CS7-13 | Diodes Incorporated |
Description: IC LED DRIVER OFFL TRIAC 2A 7SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads Mounting Type: Surface Mount Number of Outputs: 1 Type: AC DC Offline Switcher Operating Temperature: -40°C ~ 105°C (TA) Applications: Lighting Current - Output / Channel: 2A Internal Switch(s): Yes Topology: Flyback, Step-Down (Buck), Step-Up (Boost) Supplier Device Package: 7-SO Dimming: Triac Voltage - Supply (Min): 7V Voltage - Supply (Max): 25V |
на замовлення 3970 шт: термін постачання 21-31 дні (днів) |
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D3V3L2B3LP10-7 | Diodes Incorporated |
Description: TVS DIODE 3.3VWM 7V X2DFN10103Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 10pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: X2-DFN1010-3 Bidirectional Channels: 2 Voltage - Breakdown (Min): 3.8V Voltage - Clamping (Max) @ Ipp: 7V Power - Peak Pulse: 35W Power Line Protection: No Part Status: Active |
на замовлення 252531 шт: термін постачання 21-31 дні (днів) |
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D5V0F2B3LP10-7 | Diodes Incorporated |
Description: TVS DIODE 5.5VWM 12VC X2-DFN1010 Packaging: Cut Tape (CT) Mounting Type: Surface Mount |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SBR10E45P5-13 | Diodes Incorporated |
Description: DIODE SBR 45V 10A POWERDI5Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 10A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A Current - Reverse Leakage @ Vr: 280 µA @ 45 V |
на замовлення 9519 шт: термін постачання 21-31 дні (днів) |
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D5V0L1B2DLP3-7 | Diodes Incorporated |
Description: TVS DIODE 5VWM 14VC X3ESN06032Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 15pF @ 1MHz Current - Peak Pulse (10/1000µs): 6A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: X3-ESN0603-2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 14V Power - Peak Pulse: 84W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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D5V0M1U2S9-7 | Diodes Incorporated |
Description: TVS DIODE 5.5VWM 12VC SOD923Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 54pF @ 1MHz Current - Peak Pulse (10/1000µs): 9A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: SOD-923 Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.2V Voltage - Clamping (Max) @ Ipp: 12V Power - Peak Pulse: 108W Power Line Protection: No |
на замовлення 436433 шт: термін постачання 21-31 дні (днів) |
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SBRT3U45SAF-13 | Diodes Incorporated |
Description: DIODE SBR 45V 3A SMAFPackaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 3A Supplier Device Package: SMAF Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 480 mV @ 3 A Current - Reverse Leakage @ Vr: 150 µA @ 45 V |
на замовлення 141217 шт: термін постачання 21-31 дні (днів) |
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DMTH8012LK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 80V 50A TO252 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMTH8012LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 80V 9.5A PWRDI5060-8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SBRT4U10LP-7 | Diodes Incorporated |
Description: DIODE SBR 10V 4A U-DFN2020-2 |
на замовлення 300012000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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DMN3033LSNQ-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 6A SC59Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SC-59-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SBR10E45P5-7D | Diodes Incorporated |
Description: DIODE SBR 45V 10A POWERDI5 |
товару немає в наявності |
В кошику од. на суму грн. |
| DSS5240TQ-7 |
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Виробник: Diodes Incorporated
Description: TRANS PNP 40V 2A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 730 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 40V 2A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 730 mW
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| MMSZ5240BQ-7-F |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 10V 370MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 8 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 10V 370MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 8 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 38545 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 31+ | 11.07 грн |
| 45+ | 7.30 грн |
| 100+ | 3.52 грн |
| 500+ | 3.23 грн |
| 1000+ | 3.16 грн |
| SBR10E45P5-7 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 45V 10A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A
Current - Reverse Leakage @ Vr: 280 µA @ 45 V
Description: DIODE SBR 45V 10A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A
Current - Reverse Leakage @ Vr: 280 µA @ 45 V
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 14.22 грн |
| 3000+ | 13.56 грн |
| 4500+ | 12.98 грн |
| DMP2002UPS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 60A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 585 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12826 pF @ 10 V
Description: MOSFET P-CH 20V 60A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 585 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12826 pF @ 10 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 68.26 грн |
| DMP6050SSD-13 |
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Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 60V 4.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 1293pF @ 30V
Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2P-CH 60V 4.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 1293pF @ 30V
Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 23.36 грн |
| 5000+ | 21.20 грн |
| 7500+ | 19.92 грн |
| 12500+ | 18.32 грн |
| DMT8012LK3-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 80V 44A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V
Description: MOSFET N-CH 80V 44A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V
на замовлення 207500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 29.87 грн |
| 5000+ | 26.31 грн |
| 7500+ | 25.81 грн |
| DMTH8012LK3-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 80V 50A TO252
Description: MOSFET N-CH 80V 50A TO252
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DMTH8012LPS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 80V 9.5A PWRDI5060-8
Description: MOSFET N-CH 80V 9.5A PWRDI5060-8
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DT6250-06MR-13 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 5VWM 10VC 8-MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 8-MSOP
Unidirectional Channels: 6
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power Line Protection: Yes
Description: TVS DIODE 5VWM 10VC 8-MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 8-MSOP
Unidirectional Channels: 6
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power Line Protection: Yes
на замовлення 92500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 10.94 грн |
| 5000+ | 9.61 грн |
| 7500+ | 9.13 грн |
| 12500+ | 8.07 грн |
| 17500+ | 7.78 грн |
| 25000+ | 7.49 грн |
| 62500+ | 7.22 грн |
| SBRT10U60D1-13 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 60V 10A TO2523
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Description: DIODE SBR 60V 10A TO2523
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
товару немає в наявності
В кошику
од. на суму грн.
| APT17NTR-G1 |
Виробник: Diodes Incorporated
Description: TRANS NPN 480V 0.05A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 20V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 480 V
Power - Max: 200 mW
Description: TRANS NPN 480V 0.05A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 20V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 480 V
Power - Max: 200 mW
товару немає в наявності
В кошику
од. на суму грн.
| D5V0M5B6LP16-7 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 5VWM 14VC U-DFN1616-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: U-DFN1616-6
Bidirectional Channels: 5
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 130W
Power Line Protection: No
Description: TVS DIODE 5VWM 14VC U-DFN1616-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: U-DFN1616-6
Bidirectional Channels: 5
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 130W
Power Line Protection: No
на замовлення 42000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 7.04 грн |
| 6000+ | 6.63 грн |
| 9000+ | 5.87 грн |
| 30000+ | 5.44 грн |
| DESD5V0U1BA-7 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 5VWM 7.2VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 2.9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 7.2V (Typ)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM 7.2VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 2.9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 7.2V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 177000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.02 грн |
| 6000+ | 1.88 грн |
| 9000+ | 1.86 грн |
| 15000+ | 1.62 грн |
| 21000+ | 1.53 грн |
| DMHC10H170SFJ-13 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N/2P-CH 100V 2.9A 12VDFN
Packaging: Tape & Reel (TR)
Package / Case: 12-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 1167pF @ 25V
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN5045-12
Part Status: Active
Description: MOSFET 2N/2P-CH 100V 2.9A 12VDFN
Packaging: Tape & Reel (TR)
Package / Case: 12-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 1167pF @ 25V
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN5045-12
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 35.74 грн |
| DMP1011UCB9-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 8V 10A U-WLB1515-9
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 2A, 4.5V
Power Dissipation (Max): 890mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: U-WLB1515-9
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 4 V
Description: MOSFET P-CH 8V 10A U-WLB1515-9
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 2A, 4.5V
Power Dissipation (Max): 890mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: U-WLB1515-9
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 4 V
на замовлення 621000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 20.27 грн |
| DMP6110SVT-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 60V 7.3A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V
Description: MOSFET P-CH 60V 7.3A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 15.03 грн |
| 6000+ | 13.31 грн |
| 9000+ | 12.72 грн |
| 15000+ | 11.31 грн |
| 21000+ | 11.14 грн |
| SBRT4U10LP-7 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 10V 4A U-DFN2020-2
Description: DIODE SBR 10V 4A U-DFN2020-2
на замовлення 300012000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SBRT4U15LP-7 |
Виробник: Diodes Incorporated
Description: DIODE SBR 15V 4A U-DFN2020-2
Packaging: Tape & Reel (TR)
Package / Case: 2-UDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 4A
Supplier Device Package: U-DFN2020-2
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 15 V
Qualification: AEC-Q101
Description: DIODE SBR 15V 4A U-DFN2020-2
Packaging: Tape & Reel (TR)
Package / Case: 2-UDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 4A
Supplier Device Package: U-DFN2020-2
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 15 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SBRT4U30LP-7 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 30V 4A U-DFN2020-2
Description: DIODE SBR 30V 4A U-DFN2020-2
на замовлення 132000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 20.77 грн |
| 6000+ | 19.34 грн |
| ZXTR2112F-7 |
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Виробник: Diodes Incorporated
Description: IC REG LINEAR 12V 15MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 15mA
Operating Temperature: -65°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 360 µA
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 12V
Grade: Automotive
Part Status: Active
PSRR: 50dB (100Hz)
Current - Supply (Max): 6 mA
Qualification: AEC-Q101
Description: IC REG LINEAR 12V 15MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 15mA
Operating Temperature: -65°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 360 µA
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 12V
Grade: Automotive
Part Status: Active
PSRR: 50dB (100Hz)
Current - Supply (Max): 6 mA
Qualification: AEC-Q101
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 10.58 грн |
| 6000+ | 9.89 грн |
| 9000+ | 9.74 грн |
| 15000+ | 8.99 грн |
| 21000+ | 8.90 грн |
| 30000+ | 8.82 грн |
| D3V3L2B3LP10-7 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 3.3VWM 7V X2DFN10103
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: X2-DFN1010-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 3.8V
Voltage - Clamping (Max) @ Ipp: 7V
Power - Peak Pulse: 35W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.3VWM 7V X2DFN10103
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: X2-DFN1010-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 3.8V
Voltage - Clamping (Max) @ Ipp: 7V
Power - Peak Pulse: 35W
Power Line Protection: No
Part Status: Active
на замовлення 250000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 7.42 грн |
| 10000+ | 6.52 грн |
| 15000+ | 6.20 грн |
| 25000+ | 5.48 грн |
| 35000+ | 5.28 грн |
| 50000+ | 5.08 грн |
| 125000+ | 4.90 грн |
| D5V0F2B3LP10-7 |
Виробник: Diodes Incorporated
Description: TVS DIODE 5.5VWM 12VC X2-DFN1010
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Description: TVS DIODE 5.5VWM 12VC X2-DFN1010
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 7.99 грн |
| SBR10E45P5-13 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 45V 10A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A
Current - Reverse Leakage @ Vr: 280 µA @ 45 V
Description: DIODE SBR 45V 10A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A
Current - Reverse Leakage @ Vr: 280 µA @ 45 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 14.44 грн |
| SBRT3M60SA-13 |
Виробник: Diodes Incorporated
Description: DIODE SBR 60V 3A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Description: DIODE SBR 60V 3A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
товару немає в наявності
В кошику
од. на суму грн.
| SBRT3U60SA-13 |
Виробник: Diodes Incorporated
Description: DIODE SBR 60V 3A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Description: DIODE SBR 60V 3A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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В кошику
од. на суму грн.
| D5V0L1B2DLP3-7 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 5VWM 14VC X3ESN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: X3-ESN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 84W
Power Line Protection: No
Description: TVS DIODE 5VWM 14VC X3ESN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: X3-ESN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 84W
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| D5V0M1U2S9-7 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 5.5VWM 12VC SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 54pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 108W
Power Line Protection: No
Description: TVS DIODE 5.5VWM 12VC SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 54pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 108W
Power Line Protection: No
на замовлення 432000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.56 грн |
| 20000+ | 2.23 грн |
| 30000+ | 2.11 грн |
| 50000+ | 1.85 грн |
| 70000+ | 1.78 грн |
| 100000+ | 1.71 грн |
| 250000+ | 1.52 грн |
| DMP6110SVT-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 60V 7.3A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V
Description: MOSFET P-CH 60V 7.3A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V
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В кошику
од. на суму грн.
| SBRT3U45SAF-13 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SBR 45V 3A SMAF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Description: DIODE SBR 45V 3A SMAF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
на замовлення 140000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 6.33 грн |
| 20000+ | 5.56 грн |
| 30000+ | 5.36 грн |
| 50000+ | 4.72 грн |
| SBR10E45P5-7 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 45V 10A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A
Current - Reverse Leakage @ Vr: 280 µA @ 45 V
Description: DIODE SBR 45V 10A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A
Current - Reverse Leakage @ Vr: 280 µA @ 45 V
на замовлення 7474 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 25.55 грн |
| 20+ | 16.81 грн |
| DMP2002UPS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 60A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 585 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12826 pF @ 10 V
Description: MOSFET P-CH 20V 60A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 585 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12826 pF @ 10 V
на замовлення 12609 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 192.46 грн |
| 10+ | 138.92 грн |
| 100+ | 96.09 грн |
| 500+ | 75.50 грн |
| DMP6050SSD-13 |
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Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 60V 4.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 1293pF @ 30V
Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2P-CH 60V 4.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 1293pF @ 30V
Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 22326 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 60.46 грн |
| 10+ | 44.94 грн |
| 100+ | 30.64 грн |
| 500+ | 26.91 грн |
| 1000+ | 24.44 грн |
| DMT8012LK3-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 80V 44A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V
Description: MOSFET N-CH 80V 44A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V
на замовлення 210863 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 77.50 грн |
| 10+ | 63.55 грн |
| 100+ | 44.37 грн |
| 500+ | 33.14 грн |
| 1000+ | 30.19 грн |
| DMTH8012LK3-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 80V 50A TO252
Description: MOSFET N-CH 80V 50A TO252
товару немає в наявності
В кошику
од. на суму грн.
| DMTH8012LPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 80V 9.5A PWRDI5060-8
Description: MOSFET N-CH 80V 9.5A PWRDI5060-8
на замовлення 12 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DT6250-06MR-13 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 5VWM 10VC 8-MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 8-MSOP
Unidirectional Channels: 6
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power Line Protection: Yes
Description: TVS DIODE 5VWM 10VC 8-MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 8-MSOP
Unidirectional Channels: 6
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power Line Protection: Yes
на замовлення 94197 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 20.44 грн |
| 20+ | 16.65 грн |
| 100+ | 11.55 грн |
| 500+ | 9.01 грн |
| SBRT10U60D1-13 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 60V 10A TO2523
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Description: DIODE SBR 60V 10A TO2523
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
на замовлення 1054 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 103.90 грн |
| 10+ | 63.23 грн |
| 100+ | 42.00 грн |
| 500+ | 30.85 грн |
| 1000+ | 28.09 грн |
| D5V0M5B6LP16-7 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 5VWM 14VC U-DFN1616-6
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: U-DFN1616-6
Bidirectional Channels: 5
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 130W
Power Line Protection: No
Description: TVS DIODE 5VWM 14VC U-DFN1616-6
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: U-DFN1616-6
Bidirectional Channels: 5
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 130W
Power Line Protection: No
на замовлення 44845 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 32.36 грн |
| 16+ | 21.73 грн |
| 100+ | 10.98 грн |
| 500+ | 9.14 грн |
| 1000+ | 7.11 грн |
| DESD5V0U1BA-7 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 5VWM 7.2VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 2.9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 7.2V (Typ)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM 7.2VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 2.9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 7.2V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 178475 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 10.22 грн |
| 49+ | 6.72 грн |
| 108+ | 3.06 грн |
| 500+ | 2.81 грн |
| 1000+ | 2.68 грн |
| DMHC10H170SFJ-13 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N/2P-CH 100V 2.9A 12VDFN
Packaging: Cut Tape (CT)
Package / Case: 12-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 1167pF @ 25V
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN5045-12
Part Status: Active
Description: MOSFET 2N/2P-CH 100V 2.9A 12VDFN
Packaging: Cut Tape (CT)
Package / Case: 12-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 1167pF @ 25V
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN5045-12
Part Status: Active
на замовлення 3432 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 134.55 грн |
| 10+ | 82.66 грн |
| 100+ | 55.57 грн |
| 500+ | 41.25 грн |
| 1000+ | 37.91 грн |
| DMP1011UCB9-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 8V 10A U-WLB1515-9
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 2A, 4.5V
Power Dissipation (Max): 890mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: U-WLB1515-9
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 4 V
Description: MOSFET P-CH 8V 10A U-WLB1515-9
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 2A, 4.5V
Power Dissipation (Max): 890mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: U-WLB1515-9
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 4 V
на замовлення 623953 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 92.82 грн |
| 10+ | 55.85 грн |
| 100+ | 36.86 грн |
| 500+ | 26.91 грн |
| 1000+ | 24.44 грн |
| DMP6110SVT-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 60V 7.3A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V
Description: MOSFET P-CH 60V 7.3A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V
на замовлення 26374 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 63.87 грн |
| 10+ | 38.54 грн |
| 100+ | 25.02 грн |
| 500+ | 18.01 грн |
| 1000+ | 16.25 грн |
| SBRT4U10LP-7 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 10V 4A U-DFN2020-2
Description: DIODE SBR 10V 4A U-DFN2020-2
на замовлення 300012000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SBRT4U30LP-7 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 30V 4A U-DFN2020-2
Description: DIODE SBR 30V 4A U-DFN2020-2
на замовлення 134990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 53.65 грн |
| 10+ | 45.51 грн |
| 100+ | 34.90 грн |
| 500+ | 25.89 грн |
| 1000+ | 20.71 грн |
| SBRT6U10LP-7 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 10V 6A U-DFN3030-8
Description: DIODE SBR 10V 6A U-DFN3030-8
на замовлення 2880 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SBRT6U20LP-7 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 20V 6A U-DFN3030-8
Description: DIODE SBR 20V 6A U-DFN3030-8
на замовлення 645 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SBRT6U45LP-7 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 45V 6A U-DFN3030-8
Description: DIODE SBR 45V 6A U-DFN3030-8
на замовлення 627 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| ZXTR2112F-7 |
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Виробник: Diodes Incorporated
Description: IC REG LINEAR 12V 15MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 15mA
Operating Temperature: -65°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 360 µA
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 12V
Part Status: Active
PSRR: 50dB (100Hz)
Current - Supply (Max): 6 mA
Grade: Automotive
Qualification: AEC-Q101
Description: IC REG LINEAR 12V 15MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 15mA
Operating Temperature: -65°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 360 µA
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 12V
Part Status: Active
PSRR: 50dB (100Hz)
Current - Supply (Max): 6 mA
Grade: Automotive
Qualification: AEC-Q101
на замовлення 35832 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 25.55 грн |
| 20+ | 16.81 грн |
| 25+ | 14.89 грн |
| 100+ | 12.05 грн |
| 250+ | 11.13 грн |
| 500+ | 10.58 грн |
| 1000+ | 9.96 грн |
| AP1695-20CS7-13 |
Виробник: Diodes Incorporated
Description: IC LED DRIVER OFFL TRIAC 2A 7SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Lighting
Current - Output / Channel: 2A
Internal Switch(s): Yes
Topology: Flyback, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 7-SO
Dimming: Triac
Voltage - Supply (Min): 7V
Voltage - Supply (Max): 25V
Description: IC LED DRIVER OFFL TRIAC 2A 7SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Lighting
Current - Output / Channel: 2A
Internal Switch(s): Yes
Topology: Flyback, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 7-SO
Dimming: Triac
Voltage - Supply (Min): 7V
Voltage - Supply (Max): 25V
на замовлення 3970 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 75.79 грн |
| 10+ | 65.36 грн |
| 25+ | 62.03 грн |
| 100+ | 47.82 грн |
| 250+ | 44.70 грн |
| 500+ | 39.50 грн |
| 1000+ | 30.67 грн |
| D3V3L2B3LP10-7 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 3.3VWM 7V X2DFN10103
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: X2-DFN1010-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 3.8V
Voltage - Clamping (Max) @ Ipp: 7V
Power - Peak Pulse: 35W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.3VWM 7V X2DFN10103
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: X2-DFN1010-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 3.8V
Voltage - Clamping (Max) @ Ipp: 7V
Power - Peak Pulse: 35W
Power Line Protection: No
Part Status: Active
на замовлення 252531 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 36.62 грн |
| 16+ | 21.57 грн |
| 100+ | 13.64 грн |
| 500+ | 9.58 грн |
| 1000+ | 8.53 грн |
| 2000+ | 7.66 грн |
| D5V0F2B3LP10-7 |
Виробник: Diodes Incorporated
Description: TVS DIODE 5.5VWM 12VC X2-DFN1010
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Description: TVS DIODE 5.5VWM 12VC X2-DFN1010
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 37.47 грн |
| 13+ | 25.26 грн |
| 100+ | 12.76 грн |
| 500+ | 10.61 грн |
| 1000+ | 8.26 грн |
| 2000+ | 7.39 грн |
| SBR10E45P5-13 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 45V 10A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A
Current - Reverse Leakage @ Vr: 280 µA @ 45 V
Description: DIODE SBR 45V 10A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A
Current - Reverse Leakage @ Vr: 280 µA @ 45 V
на замовлення 9519 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 52.80 грн |
| 10+ | 34.28 грн |
| 100+ | 25.02 грн |
| 500+ | 18.01 грн |
| 1000+ | 15.79 грн |
| 2000+ | 14.76 грн |
| D5V0L1B2DLP3-7 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 5VWM 14VC X3ESN06032
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: X3-ESN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 84W
Power Line Protection: No
Description: TVS DIODE 5VWM 14VC X3ESN06032
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: X3-ESN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 84W
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| D5V0M1U2S9-7 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 5.5VWM 12VC SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 54pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 108W
Power Line Protection: No
Description: TVS DIODE 5.5VWM 12VC SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 54pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 108W
Power Line Protection: No
на замовлення 436433 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 10.22 грн |
| 49+ | 6.81 грн |
| 125+ | 2.64 грн |
| 500+ | 2.09 грн |
| 1000+ | 1.90 грн |
| SBRT3U45SAF-13 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 45V 3A SMAF
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Description: DIODE SBR 45V 3A SMAF
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
на замовлення 141217 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 24.70 грн |
| 21+ | 16.24 грн |
| 100+ | 13.07 грн |
| 500+ | 9.20 грн |
| 1000+ | 7.94 грн |
| 2000+ | 7.37 грн |
| 5000+ | 6.35 грн |
| DMTH8012LK3-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 80V 50A TO252
Description: MOSFET N-CH 80V 50A TO252
товару немає в наявності
В кошику
од. на суму грн.
| DMTH8012LPS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 80V 9.5A PWRDI5060-8
Description: MOSFET N-CH 80V 9.5A PWRDI5060-8
товару немає в наявності
В кошику
од. на суму грн.
| SBRT4U10LP-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SBR 10V 4A U-DFN2020-2
Description: DIODE SBR 10V 4A U-DFN2020-2
на замовлення 300012000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DMN3033LSNQ-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 6A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SC-59-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 10 V
Description: MOSFET N-CH 30V 6A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SC-59-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| SBR10E45P5-7D |
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Виробник: Diodes Incorporated
Description: DIODE SBR 45V 10A POWERDI5
Description: DIODE SBR 45V 10A POWERDI5
товару немає в наявності
В кошику
од. на суму грн.























