Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (73730) > Сторінка 315 з 1229
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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MMBZ5237BW-7-F | Diodes Incorporated |
Description: DIODE ZENER 8.2V 200MW SOT323 |
на замовлення 601 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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MMSTA63-7-F | Diodes Incorporated |
Description: TRANS PNP DARL 30V 0.5A SC70-3 |
на замовлення 1826 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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ZXMC4A16DN8TA | Diodes Incorporated |
Description: MOSFET N/P-CH 40V 4A/3.6A 8SOIC |
на замовлення 2946 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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DMC2450UV-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 20V SOT563 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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DMN63D8L-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 0.35A SOT23 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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DMP510DL-13 | Diodes Incorporated |
Description: MOSFET P-CH 50V 180MA SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Power Dissipation (Max): 310mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V |
на замовлення 170000 шт: термін постачання 21-31 дні (днів) |
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SBR5E45P5-13D | Diodes Incorporated |
Description: DIODE RECT SBR 45V 5A POWERDI5 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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SBR8E45P5-13 | Diodes Incorporated |
Description: DIODE SBR 45V 5A POWERDI5Current - Reverse Leakage @ Vr: 280 µA @ 45 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 45 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: PowerDI™ 5 Current - Average Rectified (Io): 5A Technology: Super Barrier Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: PowerDI™ 5 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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SBR8E45P5-13D | Diodes Incorporated |
Description: DIODE SBR 45V 5A POWERDI5Current - Reverse Leakage @ Vr: 280 µA @ 45 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 45 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: PowerDI™ 5 Current - Average Rectified (Io): 5A Technology: Super Barrier Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: PowerDI™ 5 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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SBR8E45P5-7D | Diodes Incorporated |
Description: DIODE SBR 45V 8A POWERDI5Current - Reverse Leakage @ Vr: 350 µA @ 45 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 45 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: PowerDI™ 5 Current - Average Rectified (Io): 8A Technology: Super Barrier Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: PowerDI™ 5 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||
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AZV3002RL-7 | Diodes Incorporated |
Description: IC COMPARATOR 2CH U-FLGA1616-8Packaging: Tape & Reel (TR) Package / Case: 8-UFLGA Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 2 Type: Standard (General Purpose) Operating Temperature: -40°C ~ 85°C Voltage - Supply, Single/Dual (±): 1.6V ~ 5.5V Supplier Device Package: U-FLGA1616-8 Propagation Delay (Max): 0.8µs Current - Quiescent (Max): 6µA (Typ) Voltage - Input Offset (Max): 30mV Current - Input Bias (Max): 1pA Current - Output (Typ): 68mA CMRR, PSRR (Typ): 70dB CMRR, 80dB PSRR Hysteresis: 13mV Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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AZV3002S-13 | Diodes Incorporated |
Description: IC COMPARATOR 2 GEN PUR 8SOHysteresis: 13mV CMRR, PSRR (Typ): 70dB CMRR, 80dB PSRR Current - Output (Typ): 68mA Current - Input Bias (Max): 1pA Voltage - Input Offset (Max): 30mV Current - Quiescent (Max): 9µA (Typ) Propagation Delay (Max): 0.8µs Supplier Device Package: 8-SO Voltage - Supply, Single/Dual (±): 1.6V ~ 5.5V Operating Temperature: -40°C ~ 85°C Type: Standard (General Purpose) Number of Elements: 2 Mounting Type: Surface Mount Output Type: Push-Pull Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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AZV3002RL-7 | Diodes Incorporated |
Description: IC COMPARATOR 2CH U-FLGA1616-8Packaging: Cut Tape (CT) Package / Case: 8-UFLGA Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 2 Type: Standard (General Purpose) Operating Temperature: -40°C ~ 85°C Voltage - Supply, Single/Dual (±): 1.6V ~ 5.5V Supplier Device Package: U-FLGA1616-8 Propagation Delay (Max): 0.8µs Current - Quiescent (Max): 6µA (Typ) Voltage - Input Offset (Max): 30mV Current - Input Bias (Max): 1pA Current - Output (Typ): 68mA CMRR, PSRR (Typ): 70dB CMRR, 80dB PSRR Hysteresis: 13mV Part Status: Active |
на замовлення 2925 шт: термін постачання 21-31 дні (днів) |
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AZV3002S-13 | Diodes Incorporated |
Description: IC COMPARATOR 2 GEN PUR 8SOHysteresis: 13mV CMRR, PSRR (Typ): 70dB CMRR, 80dB PSRR Current - Output (Typ): 68mA Current - Input Bias (Max): 1pA Voltage - Input Offset (Max): 30mV Current - Quiescent (Max): 9µA (Typ) Propagation Delay (Max): 0.8µs Supplier Device Package: 8-SO Voltage - Supply, Single/Dual (±): 1.6V ~ 5.5V Operating Temperature: -40°C ~ 85°C Type: Standard (General Purpose) Number of Elements: 2 Mounting Type: Surface Mount Output Type: Push-Pull Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 5470 шт: термін постачання 21-31 дні (днів) |
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ZXTR2112FQ-7 | Diodes Incorporated |
Description: IC REG LINEAR 12V 15MA SOT23-3Part Status: Active Voltage - Output (Min/Fixed): 12V Supplier Device Package: SOT-23-3 Number of Regulators: 1 Voltage - Input (Max): 60V Current - Quiescent (Iq): 360 µA Output Configuration: Positive Operating Temperature: -65°C ~ 150°C Current - Output: 15mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Current - Supply (Max): 6 mA PSRR: 50dB (100Hz) |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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AP9234LA-AO-HSB-7 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL 6UDFN |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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DDZX5V1BQ-7 | Diodes Incorporated |
Description: DIODE ZENER 5.1V 300MW SOT23 |
на замовлення 72000 шт: термін постачання 21-31 дні (днів) |
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DMP3008SFGQ-7 | Diodes Incorporated |
Description: MOSFET P-CH 30V 8.6A PWRDI3333-8Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerDI3333-8 |
на замовлення 48000 шт: термін постачання 21-31 дні (днів) |
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DMP3008SFGQ-13 | Diodes Incorporated |
Description: MOSFET P-CH 30V 8.6A PWRDI3333-8Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerDI3333-8 Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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AZ1117IH-3.3TRG1 | Diodes Incorporated |
Description: IC REG LINEAR 3.3V 1A SOT-223-3Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 15V Number of Regulators: 1 Supplier Device Package: SOT-223-3 Voltage - Output (Min/Fixed): 3.3V Part Status: Active PSRR: 70dB (120Hz) Voltage Dropout (Max): 1.3V @ 800mA Protection Features: Thermal Shutdown |
на замовлення 68000 шт: термін постачання 21-31 дні (днів) |
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AZ1117IH-5.0TRG1 | Diodes Incorporated |
Description: IC REG LINEAR 5V 1A SOT-223-3Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 15V Number of Regulators: 1 Supplier Device Package: SOT-223-3 Voltage - Output (Min/Fixed): 5V Part Status: Active PSRR: 70dB (120Hz) Voltage Dropout (Max): 1.3V @ 800mA Protection Features: Thermal Shutdown |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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ZXTR2112FQ-7 | Diodes Incorporated |
Description: IC REG LINEAR 12V 15MA SOT23-3Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: SOT-23-3 Number of Regulators: 1 Voltage - Input (Max): 60V Current - Quiescent (Iq): 360 µA Output Configuration: Positive Operating Temperature: -65°C ~ 150°C Current - Output: 15mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Current - Supply (Max): 6 mA PSRR: 50dB (100Hz) Part Status: Active Voltage - Output (Min/Fixed): 12V |
на замовлення 32858 шт: термін постачання 21-31 дні (днів) |
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AP9234LA-AO-HSB-7 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL 6UDFN |
на замовлення 14505 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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DDZX5V1BQ-7 | Diodes Incorporated |
Description: DIODE ZENER 5.1V 300MW SOT23 |
на замовлення 72621 шт: термін постачання 21-31 дні (днів) |
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DMP3008SFGQ-7 | Diodes Incorporated |
Description: MOSFET P-CH 30V 8.6A PWRDI3333-8Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V Qualification: AEC-Q101 Grade: Automotive Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerDI3333-8 Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 50514 шт: термін постачання 21-31 дні (днів) |
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AZ1117IH-3.3TRG1 | Diodes Incorporated |
Description: IC REG LINEAR 3.3V 1A SOT-223-3Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 15V Number of Regulators: 1 Supplier Device Package: SOT-223-3 Voltage - Output (Min/Fixed): 3.3V Part Status: Active PSRR: 70dB (120Hz) Voltage Dropout (Max): 1.3V @ 800mA Protection Features: Thermal Shutdown |
на замовлення 69884 шт: термін постачання 21-31 дні (днів) |
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AZ1117IH-5.0TRG1 | Diodes Incorporated |
Description: IC REG LINEAR 5V 1A SOT-223-3Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 15V Number of Regulators: 1 Supplier Device Package: SOT-223-3 Voltage - Output (Min/Fixed): 5V Part Status: Active PSRR: 70dB (120Hz) Voltage Dropout (Max): 1.3V @ 800mA Protection Features: Thermal Shutdown |
на замовлення 84 шт: термін постачання 21-31 дні (днів) |
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AH5775-P-B | Diodes Incorporated |
Description: IC MOTOR DRIVER 2.5V-18V TO94Part Status: Active Motor Type - AC, DC: Brushless DC (BLDC) Supplier Device Package: TO-94 Voltage - Load: 2.5V ~ 18V Technology: Power MOSFET Applications: Fan Motor Driver Voltage - Supply: 2.5V ~ 18V Output Configuration: Half Bridge (2) Operating Temperature: -40°C ~ 150°C (TJ) Interface: On/Off Current - Output: 300mA Function: Driver - Fully Integrated, Control and Power Stage Mounting Type: Through Hole Package / Case: 4-SSIP Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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DMC2450UV-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 20V SOT563Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 450mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-563 Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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DML1005LDS-7 | Diodes Incorporated |
Description: IC PWR SWITCH N-CHAN 1:1 8VDFNSupplier Device Package: V-DFN3030-8 (Type R) Ratio - Input:Output: 1:1 Current - Output (Max): 10A Voltage - Load: 0.8V ~ 4V Rds On (Typ): 3.8mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 85°C (TA) Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: 8-VDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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DMN63D8L-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 350MA SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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DMNH10H028SK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 55A TO252Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252-3 Vgs(th) (Max) @ Id: 3.3V @ 250µA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
на замовлення 195000 шт: термін постачання 21-31 дні (днів) |
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DMNH4006SK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 40V 18A/90A TO252Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.2W (Ta) Rds On (Max) @ Id, Vgs: 6mOhm @ 86A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252-3 |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
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DMP10H4D2S-7 | Diodes Incorporated |
Description: MOSFET P-CH 100V 270MA SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V Power Dissipation (Max): 380mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 25 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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DMP510DL-7 | Diodes Incorporated |
Description: MOSFET P-CH 50V 180MA SOT23Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V Drain to Source Voltage (Vdss): 50 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 5V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 310mW (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
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DMT10H015LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 7.3A PWRDI5060FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerDI5060-8 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 1.3W (Ta), 46W (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc) |
на замовлення 107500 шт: термін постачання 21-31 дні (днів) |
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DMT10H015LSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 8.3A 8SOInput Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
на замовлення 57500 шт: термін постачання 21-31 дні (днів) |
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DMT6004LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 22A PWRDI5060Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V Power Dissipation (Max): 2.1W (Ta), 105W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 96.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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DMTH6010LK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 14.8A/70A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V |
на замовлення 110000 шт: термін постачання 21-31 дні (днів) |
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DMTH6010LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 13.5A |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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SBR5E45P5-13 | Diodes Incorporated |
Description: DIODE RECT SBR 45V 5A POWERDI5 |
на замовлення 4294967295 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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SBR5E45P5-7 | Diodes Incorporated |
Description: DIODE RECT SBR 45V 5A POWERDI5 |
на замовлення 15004500 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||
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SBR5E45P5-7D | Diodes Incorporated |
Description: DIODE RECT SBR 45V 5A POWERDI5 |
на замовлення 15006000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||
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SBR8E45P5-7 | Diodes Incorporated |
Description: DIODE SBR 45V 8A POWERDI5Current - Reverse Leakage @ Vr: 350 µA @ 45 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 45 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: PowerDI™ 5 Current - Average Rectified (Io): 8A Technology: Super Barrier Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: PowerDI™ 5 Packaging: Tape & Reel (TR) |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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D14V0S1U2WS-7 | Diodes Incorporated |
Description: TVS DIODE 14VWM 26VC SOD323Voltage - Clamping (Max) @ Ipp: 26V Voltage - Breakdown (Min): 14.5V Unidirectional Channels: 1 Supplier Device Package: SOD-323 Voltage - Reverse Standoff (Typ): 14V (Max) Current - Peak Pulse (10/1000µs): 50A (8/20µs) Capacitance @ Frequency: 360pF @ 1MHz Applications: General Purpose Operating Temperature: -55°C ~ 125°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Cut Tape (CT) Power Line Protection: No Power - Peak Pulse: 1300W (1.3kW) |
на замовлення 9552 шт: термін постачання 21-31 дні (днів) |
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DMC2450UV-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 20V SOT563Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 450mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-563 Part Status: Active |
на замовлення 1540 шт: термін постачання 21-31 дні (днів) |
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DMN63D8L-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 350MA SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V |
на замовлення 1107 шт: термін постачання 21-31 дні (днів) |
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DMNH10H028SK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 55A TO252Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252-3 Vgs(th) (Max) @ Id: 3.3V @ 250µA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) FET Type: N-Channel |
на замовлення 195000 шт: термін постачання 21-31 дні (днів) |
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DMNH4006SK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 40V 18A/90A TO252Rds On (Max) @ Id, Vgs: 6mOhm @ 86A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.2W (Ta) |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
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DMP10H4D2S-7 | Diodes Incorporated |
Description: MOSFET P-CH 100V 270MA SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V Power Dissipation (Max): 380mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 25 V |
на замовлення 17889 шт: термін постачання 21-31 дні (днів) |
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DMP510DL-7 | Diodes Incorporated |
Description: MOSFET P-CH 50V 180MA SOT23Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V Drain to Source Voltage (Vdss): 50 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 5V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 310mW (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 37118 шт: термін постачання 21-31 дні (днів) |
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DMT10H015LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 7.3A PWRDI5060Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerDI5060-8 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 1.3W (Ta), 46W (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V |
на замовлення 108220 шт: термін постачання 21-31 дні (днів) |
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DMT10H015LSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 8.3A 8SOInput Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 58894 шт: термін постачання 21-31 дні (днів) |
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DMT6004LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 22A PWRDI5060Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V Power Dissipation (Max): 2.1W (Ta), 105W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 96.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V |
на замовлення 13522 шт: термін постачання 21-31 дні (днів) |
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DMTH6010LK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 14.8A/70A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V |
на замовлення 112494 шт: термін постачання 21-31 дні (днів) |
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DMTH6010LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 13.5A |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SBR5E45P5-13 | Diodes Incorporated |
Description: DIODE RECT SBR 45V 5A POWERDI5 |
на замовлення 4294967295 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SBR5E45P5-7 | Diodes Incorporated |
Description: DIODE RECT SBR 45V 5A POWERDI5 |
на замовлення 15004500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SBR5E45P5-7D | Diodes Incorporated |
Description: DIODE RECT SBR 45V 5A POWERDI5 |
на замовлення 15006000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SBR8E45P5-7 | Diodes Incorporated |
Description: DIODE SBR 45V 8A POWERDI5Current - Reverse Leakage @ Vr: 350 µA @ 45 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 45 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: PowerDI™ 5 Current - Average Rectified (Io): 8A Technology: Super Barrier Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: PowerDI™ 5 Packaging: Cut Tape (CT) |
на замовлення 13400 шт: термін постачання 21-31 дні (днів) |
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| MMBZ5237BW-7-F |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 8.2V 200MW SOT323
Description: DIODE ZENER 8.2V 200MW SOT323
на замовлення 601 шт:
термін постачання 21-31 дні (днів)
| MMSTA63-7-F |
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Виробник: Diodes Incorporated
Description: TRANS PNP DARL 30V 0.5A SC70-3
Description: TRANS PNP DARL 30V 0.5A SC70-3
на замовлення 1826 шт:
термін постачання 21-31 дні (днів)
| ZXMC4A16DN8TA |
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Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 40V 4A/3.6A 8SOIC
Description: MOSFET N/P-CH 40V 4A/3.6A 8SOIC
на замовлення 2946 шт:
термін постачання 21-31 дні (днів)
| DMC2450UV-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 20V SOT563
Description: MOSFET N/P-CH 20V SOT563
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMN63D8L-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 0.35A SOT23
Description: MOSFET N-CH 30V 0.35A SOT23
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMP510DL-13 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 50V 180MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
Description: MOSFET P-CH 50V 180MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
на замовлення 170000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 3.66 грн |
| 30000+ | 3.46 грн |
| 50000+ | 2.86 грн |
| SBR5E45P5-13D |
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Виробник: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
Description: DIODE RECT SBR 45V 5A POWERDI5
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| SBR8E45P5-13 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 45V 5A POWERDI5
Current - Reverse Leakage @ Vr: 280 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 5A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
Description: DIODE SBR 45V 5A POWERDI5
Current - Reverse Leakage @ Vr: 280 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 5A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| SBR8E45P5-13D |
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Виробник: Diodes Incorporated
Description: DIODE SBR 45V 5A POWERDI5
Current - Reverse Leakage @ Vr: 280 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 5A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
Description: DIODE SBR 45V 5A POWERDI5
Current - Reverse Leakage @ Vr: 280 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 5A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| SBR8E45P5-7D |
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Виробник: Diodes Incorporated
Description: DIODE SBR 45V 8A POWERDI5
Current - Reverse Leakage @ Vr: 350 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 8A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
Description: DIODE SBR 45V 8A POWERDI5
Current - Reverse Leakage @ Vr: 350 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 8A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| AZV3002RL-7 |
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Виробник: Diodes Incorporated
Description: IC COMPARATOR 2CH U-FLGA1616-8
Packaging: Tape & Reel (TR)
Package / Case: 8-UFLGA
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.6V ~ 5.5V
Supplier Device Package: U-FLGA1616-8
Propagation Delay (Max): 0.8µs
Current - Quiescent (Max): 6µA (Typ)
Voltage - Input Offset (Max): 30mV
Current - Input Bias (Max): 1pA
Current - Output (Typ): 68mA
CMRR, PSRR (Typ): 70dB CMRR, 80dB PSRR
Hysteresis: 13mV
Part Status: Active
Description: IC COMPARATOR 2CH U-FLGA1616-8
Packaging: Tape & Reel (TR)
Package / Case: 8-UFLGA
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.6V ~ 5.5V
Supplier Device Package: U-FLGA1616-8
Propagation Delay (Max): 0.8µs
Current - Quiescent (Max): 6µA (Typ)
Voltage - Input Offset (Max): 30mV
Current - Input Bias (Max): 1pA
Current - Output (Typ): 68mA
CMRR, PSRR (Typ): 70dB CMRR, 80dB PSRR
Hysteresis: 13mV
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| AZV3002S-13 |
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Виробник: Diodes Incorporated
Description: IC COMPARATOR 2 GEN PUR 8SO
Hysteresis: 13mV
CMRR, PSRR (Typ): 70dB CMRR, 80dB PSRR
Current - Output (Typ): 68mA
Current - Input Bias (Max): 1pA
Voltage - Input Offset (Max): 30mV
Current - Quiescent (Max): 9µA (Typ)
Propagation Delay (Max): 0.8µs
Supplier Device Package: 8-SO
Voltage - Supply, Single/Dual (±): 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Standard (General Purpose)
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC COMPARATOR 2 GEN PUR 8SO
Hysteresis: 13mV
CMRR, PSRR (Typ): 70dB CMRR, 80dB PSRR
Current - Output (Typ): 68mA
Current - Input Bias (Max): 1pA
Voltage - Input Offset (Max): 30mV
Current - Quiescent (Max): 9µA (Typ)
Propagation Delay (Max): 0.8µs
Supplier Device Package: 8-SO
Voltage - Supply, Single/Dual (±): 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Standard (General Purpose)
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 12.44 грн |
| 5000+ | 11.63 грн |
| AZV3002RL-7 |
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Виробник: Diodes Incorporated
Description: IC COMPARATOR 2CH U-FLGA1616-8
Packaging: Cut Tape (CT)
Package / Case: 8-UFLGA
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.6V ~ 5.5V
Supplier Device Package: U-FLGA1616-8
Propagation Delay (Max): 0.8µs
Current - Quiescent (Max): 6µA (Typ)
Voltage - Input Offset (Max): 30mV
Current - Input Bias (Max): 1pA
Current - Output (Typ): 68mA
CMRR, PSRR (Typ): 70dB CMRR, 80dB PSRR
Hysteresis: 13mV
Part Status: Active
Description: IC COMPARATOR 2CH U-FLGA1616-8
Packaging: Cut Tape (CT)
Package / Case: 8-UFLGA
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.6V ~ 5.5V
Supplier Device Package: U-FLGA1616-8
Propagation Delay (Max): 0.8µs
Current - Quiescent (Max): 6µA (Typ)
Voltage - Input Offset (Max): 30mV
Current - Input Bias (Max): 1pA
Current - Output (Typ): 68mA
CMRR, PSRR (Typ): 70dB CMRR, 80dB PSRR
Hysteresis: 13mV
Part Status: Active
на замовлення 2925 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.57 грн |
| 15+ | 20.61 грн |
| 25+ | 18.33 грн |
| 50+ | 15.90 грн |
| 100+ | 14.84 грн |
| AZV3002S-13 |
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Виробник: Diodes Incorporated
Description: IC COMPARATOR 2 GEN PUR 8SO
Hysteresis: 13mV
CMRR, PSRR (Typ): 70dB CMRR, 80dB PSRR
Current - Output (Typ): 68mA
Current - Input Bias (Max): 1pA
Voltage - Input Offset (Max): 30mV
Current - Quiescent (Max): 9µA (Typ)
Propagation Delay (Max): 0.8µs
Supplier Device Package: 8-SO
Voltage - Supply, Single/Dual (±): 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Standard (General Purpose)
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC COMPARATOR 2 GEN PUR 8SO
Hysteresis: 13mV
CMRR, PSRR (Typ): 70dB CMRR, 80dB PSRR
Current - Output (Typ): 68mA
Current - Input Bias (Max): 1pA
Voltage - Input Offset (Max): 30mV
Current - Quiescent (Max): 9µA (Typ)
Propagation Delay (Max): 0.8µs
Supplier Device Package: 8-SO
Voltage - Supply, Single/Dual (±): 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Standard (General Purpose)
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 5470 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 28.22 грн |
| 16+ | 19.25 грн |
| 25+ | 17.15 грн |
| 100+ | 13.94 грн |
| 250+ | 12.91 грн |
| 500+ | 12.29 грн |
| 1000+ | 11.59 грн |
| ZXTR2112FQ-7 |
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Виробник: Diodes Incorporated
Description: IC REG LINEAR 12V 15MA SOT23-3
Part Status: Active
Voltage - Output (Min/Fixed): 12V
Supplier Device Package: SOT-23-3
Number of Regulators: 1
Voltage - Input (Max): 60V
Current - Quiescent (Iq): 360 µA
Output Configuration: Positive
Operating Temperature: -65°C ~ 150°C
Current - Output: 15mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Supply (Max): 6 mA
PSRR: 50dB (100Hz)
Description: IC REG LINEAR 12V 15MA SOT23-3
Part Status: Active
Voltage - Output (Min/Fixed): 12V
Supplier Device Package: SOT-23-3
Number of Regulators: 1
Voltage - Input (Max): 60V
Current - Quiescent (Iq): 360 µA
Output Configuration: Positive
Operating Temperature: -65°C ~ 150°C
Current - Output: 15mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Supply (Max): 6 mA
PSRR: 50dB (100Hz)
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 11.61 грн |
| 6000+ | 10.87 грн |
| 9000+ | 10.71 грн |
| 15000+ | 9.89 грн |
| 21000+ | 9.80 грн |
| 30000+ | 9.71 грн |
| AP9234LA-AO-HSB-7 |
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Виробник: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL 6UDFN
Description: IC BATT PROT LI-ION 1CELL 6UDFN
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| DDZX5V1BQ-7 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 5.1V 300MW SOT23
Description: DIODE ZENER 5.1V 300MW SOT23
на замовлення 72000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.71 грн |
| 6000+ | 3.94 грн |
| 15000+ | 3.35 грн |
| 30000+ | 2.96 грн |
| DMP3008SFGQ-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 8.6A PWRDI3333-8
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Description: MOSFET P-CH 30V 8.6A PWRDI3333-8
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 35.13 грн |
| 4000+ | 33.66 грн |
| 6000+ | 33.19 грн |
| DMP3008SFGQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 8.6A PWRDI3333-8
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET P-CH 30V 8.6A PWRDI3333-8
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 35.56 грн |
| AZ1117IH-3.3TRG1 |
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Виробник: Diodes Incorporated
Description: IC REG LINEAR 3.3V 1A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 800mA
Protection Features: Thermal Shutdown
Description: IC REG LINEAR 3.3V 1A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 800mA
Protection Features: Thermal Shutdown
на замовлення 68000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 8.23 грн |
| 12000+ | 7.58 грн |
| AZ1117IH-5.0TRG1 |
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Виробник: Diodes Incorporated
Description: IC REG LINEAR 5V 1A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 800mA
Protection Features: Thermal Shutdown
Description: IC REG LINEAR 5V 1A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 800mA
Protection Features: Thermal Shutdown
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| ZXTR2112FQ-7 |
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Виробник: Diodes Incorporated
Description: IC REG LINEAR 12V 15MA SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SOT-23-3
Number of Regulators: 1
Voltage - Input (Max): 60V
Current - Quiescent (Iq): 360 µA
Output Configuration: Positive
Operating Temperature: -65°C ~ 150°C
Current - Output: 15mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Supply (Max): 6 mA
PSRR: 50dB (100Hz)
Part Status: Active
Voltage - Output (Min/Fixed): 12V
Description: IC REG LINEAR 12V 15MA SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SOT-23-3
Number of Regulators: 1
Voltage - Input (Max): 60V
Current - Quiescent (Iq): 360 µA
Output Configuration: Positive
Operating Temperature: -65°C ~ 150°C
Current - Output: 15mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Supply (Max): 6 mA
PSRR: 50dB (100Hz)
Part Status: Active
Voltage - Output (Min/Fixed): 12V
на замовлення 32858 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.43 грн |
| 17+ | 18.19 грн |
| 25+ | 16.18 грн |
| 100+ | 13.15 грн |
| 250+ | 12.17 грн |
| 500+ | 11.58 грн |
| 1000+ | 10.91 грн |
| AP9234LA-AO-HSB-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL 6UDFN
Description: IC BATT PROT LI-ION 1CELL 6UDFN
на замовлення 14505 шт:
термін постачання 21-31 дні (днів)
| DDZX5V1BQ-7 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 5.1V 300MW SOT23
Description: DIODE ZENER 5.1V 300MW SOT23
на замовлення 72621 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.43 грн |
| 15+ | 21.21 грн |
| 100+ | 11.24 грн |
| 500+ | 6.94 грн |
| 1000+ | 4.72 грн |
| DMP3008SFGQ-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 8.6A PWRDI3333-8
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 8.6A PWRDI3333-8
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 50514 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 108.95 грн |
| 10+ | 73.67 грн |
| 100+ | 54.37 грн |
| 500+ | 40.34 грн |
| 1000+ | 36.91 грн |
| AZ1117IH-3.3TRG1 |
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Виробник: Diodes Incorporated
Description: IC REG LINEAR 3.3V 1A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 800mA
Protection Features: Thermal Shutdown
Description: IC REG LINEAR 3.3V 1A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 800mA
Protection Features: Thermal Shutdown
на замовлення 69884 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 20.38 грн |
| 23+ | 13.51 грн |
| 26+ | 11.96 грн |
| 50+ | 10.33 грн |
| 100+ | 9.61 грн |
| AZ1117IH-5.0TRG1 |
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Виробник: Diodes Incorporated
Description: IC REG LINEAR 5V 1A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 800mA
Protection Features: Thermal Shutdown
Description: IC REG LINEAR 5V 1A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 800mA
Protection Features: Thermal Shutdown
на замовлення 84 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 18.81 грн |
| 25+ | 12.30 грн |
| 28+ | 10.84 грн |
| 50+ | 9.35 грн |
| AH5775-P-B |
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Виробник: Diodes Incorporated
Description: IC MOTOR DRIVER 2.5V-18V TO94
Part Status: Active
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: TO-94
Voltage - Load: 2.5V ~ 18V
Technology: Power MOSFET
Applications: Fan Motor Driver
Voltage - Supply: 2.5V ~ 18V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: On/Off
Current - Output: 300mA
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Through Hole
Package / Case: 4-SSIP
Packaging: Bulk
Description: IC MOTOR DRIVER 2.5V-18V TO94
Part Status: Active
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: TO-94
Voltage - Load: 2.5V ~ 18V
Technology: Power MOSFET
Applications: Fan Motor Driver
Voltage - Supply: 2.5V ~ 18V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: On/Off
Current - Output: 300mA
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Through Hole
Package / Case: 4-SSIP
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| DMC2450UV-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 20V SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA
Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V
Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Description: MOSFET N/P-CH 20V SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA
Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V
Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DML1005LDS-7 |
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Виробник: Diodes Incorporated
Description: IC PWR SWITCH N-CHAN 1:1 8VDFN
Supplier Device Package: V-DFN3030-8 (Type R)
Ratio - Input:Output: 1:1
Current - Output (Max): 10A
Voltage - Load: 0.8V ~ 4V
Rds On (Typ): 3.8mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC PWR SWITCH N-CHAN 1:1 8VDFN
Supplier Device Package: V-DFN3030-8 (Type R)
Ratio - Input:Output: 1:1
Current - Output (Max): 10A
Voltage - Load: 0.8V ~ 4V
Rds On (Typ): 3.8mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMN63D8L-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 350MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
Description: MOSFET N-CH 30V 350MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMNH10H028SK3-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 55A TO252
Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 55A TO252
Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
на замовлення 195000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 40.51 грн |
| 5000+ | 37.16 грн |
| 12500+ | 36.46 грн |
| DMNH4006SK3-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 18A/90A TO252
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.2W (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 86A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252-3
Description: MOSFET N-CH 40V 18A/90A TO252
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.2W (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 86A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252-3
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 55.27 грн |
| 5000+ | 51.22 грн |
| 12500+ | 51.04 грн |
| DMP10H4D2S-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 100V 270MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 25 V
Description: MOSFET P-CH 100V 270MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 25 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.34 грн |
| 6000+ | 4.65 грн |
| 9000+ | 4.40 грн |
| 15000+ | 3.87 грн |
| DMP510DL-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 50V 180MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 310mW (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 50V 180MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 310mW (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.65 грн |
| 6000+ | 3.18 грн |
| 9000+ | 3.10 грн |
| 15000+ | 2.89 грн |
| 21000+ | 2.88 грн |
| 30000+ | 2.80 грн |
| DMT10H015LPS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 7.3A PWRDI5060
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 1.3W (Ta), 46W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc)
Description: MOSFET N-CH 100V 7.3A PWRDI5060
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 1.3W (Ta), 46W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc)
на замовлення 107500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 30.49 грн |
| 5000+ | 28.94 грн |
| 7500+ | 28.62 грн |
| DMT10H015LSS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 8.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 8.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
на замовлення 57500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 31.74 грн |
| 5000+ | 28.40 грн |
| 7500+ | 28.14 грн |
| DMT6004LPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 22A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 2.1W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V
Description: MOSFET N-CH 60V 22A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 2.1W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 59.18 грн |
| 7500+ | 51.56 грн |
| DMTH6010LK3-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 14.8A/70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
Description: MOSFET N-CH 60V 14.8A/70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
на замовлення 110000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 31.35 грн |
| 5000+ | 28.15 грн |
| DMTH6010LPS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 13.5A
Description: MOSFET N-CH 60V 13.5A
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| SBR5E45P5-13 |
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Виробник: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
Description: DIODE RECT SBR 45V 5A POWERDI5
на замовлення 4294967295 шт:
термін постачання 21-31 дні (днів)
| SBR5E45P5-7 |
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Виробник: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
Description: DIODE RECT SBR 45V 5A POWERDI5
на замовлення 15004500 шт:
термін постачання 21-31 дні (днів)
| SBR5E45P5-7D |
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Виробник: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
Description: DIODE RECT SBR 45V 5A POWERDI5
на замовлення 15006000 шт:
термін постачання 21-31 дні (днів)
| SBR8E45P5-7 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 45V 8A POWERDI5
Current - Reverse Leakage @ Vr: 350 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 8A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
Description: DIODE SBR 45V 8A POWERDI5
Current - Reverse Leakage @ Vr: 350 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 8A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 14.10 грн |
| 3000+ | 13.44 грн |
| 4500+ | 12.94 грн |
| 7500+ | 11.70 грн |
| D14V0S1U2WS-7 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 14VWM 26VC SOD323
Voltage - Clamping (Max) @ Ipp: 26V
Voltage - Breakdown (Min): 14.5V
Unidirectional Channels: 1
Supplier Device Package: SOD-323
Voltage - Reverse Standoff (Typ): 14V (Max)
Current - Peak Pulse (10/1000µs): 50A (8/20µs)
Capacitance @ Frequency: 360pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Power Line Protection: No
Power - Peak Pulse: 1300W (1.3kW)
Description: TVS DIODE 14VWM 26VC SOD323
Voltage - Clamping (Max) @ Ipp: 26V
Voltage - Breakdown (Min): 14.5V
Unidirectional Channels: 1
Supplier Device Package: SOD-323
Voltage - Reverse Standoff (Typ): 14V (Max)
Current - Peak Pulse (10/1000µs): 50A (8/20µs)
Capacitance @ Frequency: 360pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Power Line Protection: No
Power - Peak Pulse: 1300W (1.3kW)
на замовлення 9552 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 22.73 грн |
| 21+ | 14.79 грн |
| 100+ | 7.17 грн |
| 500+ | 6.67 грн |
| 1000+ | 6.55 грн |
| DMC2450UV-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 20V SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA
Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V
Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Description: MOSFET N/P-CH 20V SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA
Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V
Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
на замовлення 1540 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 34.49 грн |
| 15+ | 20.45 грн |
| 100+ | 12.94 грн |
| 500+ | 9.10 грн |
| 1000+ | 8.11 грн |
| DMN63D8L-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 350MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
Description: MOSFET N-CH 30V 350MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
на замовлення 1107 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 14.89 грн |
| 35+ | 8.76 грн |
| 100+ | 5.44 грн |
| 500+ | 3.73 грн |
| 1000+ | 3.28 грн |
| DMNH10H028SK3-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 55A TO252
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Description: MOSFET N-CH 100V 55A TO252
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
на замовлення 195000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 145.01 грн |
| DMNH4006SK3-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 18A/90A TO252
Rds On (Max) @ Id, Vgs: 6mOhm @ 86A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.2W (Ta)
Description: MOSFET N-CH 40V 18A/90A TO252
Rds On (Max) @ Id, Vgs: 6mOhm @ 86A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.2W (Ta)
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 126.19 грн |
| DMP10H4D2S-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 100V 270MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 25 V
Description: MOSFET P-CH 100V 270MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 25 V
на замовлення 17889 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.87 грн |
| 20+ | 15.17 грн |
| 100+ | 9.55 грн |
| 500+ | 6.67 грн |
| 1000+ | 5.92 грн |
| DMP510DL-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 50V 180MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 310mW (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 50V 180MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 310mW (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 37118 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 21.95 грн |
| 24+ | 12.68 грн |
| 100+ | 6.70 грн |
| 500+ | 5.17 грн |
| 1000+ | 4.85 грн |
| DMT10H015LPS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 7.3A PWRDI5060
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 1.3W (Ta), 46W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Description: MOSFET N-CH 100V 7.3A PWRDI5060
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 1.3W (Ta), 46W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
на замовлення 108220 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 90.92 грн |
| 10+ | 61.82 грн |
| 100+ | 43.60 грн |
| 500+ | 34.45 грн |
| 1000+ | 32.46 грн |
| DMT10H015LSS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 8.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 8.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 58894 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 116.79 грн |
| 10+ | 70.87 грн |
| 100+ | 46.40 грн |
| 500+ | 35.01 грн |
| 1000+ | 31.95 грн |
| DMT6004LPS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 22A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 2.1W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V
Description: MOSFET N-CH 60V 22A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 2.1W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V
на замовлення 13522 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 199.87 грн |
| 10+ | 124.16 грн |
| 25+ | 105.82 грн |
| 50+ | 88.70 грн |
| 100+ | 79.72 грн |
| DMTH6010LK3-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 14.8A/70A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
Description: MOSFET N-CH 60V 14.8A/70A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
на замовлення 112494 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 116.93 грн |
| 10+ | 71.52 грн |
| 100+ | 47.98 грн |
| 500+ | 35.55 грн |
| 1000+ | 32.51 грн |
| DMTH6010LPS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 13.5A
Description: MOSFET N-CH 60V 13.5A
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| SBR5E45P5-13 |
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Виробник: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
Description: DIODE RECT SBR 45V 5A POWERDI5
на замовлення 4294967295 шт:
термін постачання 21-31 дні (днів)
| SBR5E45P5-7 |
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Виробник: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
Description: DIODE RECT SBR 45V 5A POWERDI5
на замовлення 15004500 шт:
термін постачання 21-31 дні (днів)
| SBR5E45P5-7D |
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Виробник: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
Description: DIODE RECT SBR 45V 5A POWERDI5
на замовлення 15006000 шт:
термін постачання 21-31 дні (днів)
| SBR8E45P5-7 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 45V 8A POWERDI5
Current - Reverse Leakage @ Vr: 350 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 8A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Cut Tape (CT)
Description: DIODE SBR 45V 8A POWERDI5
Current - Reverse Leakage @ Vr: 350 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 8A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Cut Tape (CT)
на замовлення 13400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 48.60 грн |
| 10+ | 30.87 грн |
| 100+ | 24.29 грн |
| 500+ | 17.46 грн |





















