Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74761) > Сторінка 374 з 1247
Фото | Назва | Виробник | Інформація |
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DMN60H3D5SK3-13 | Diodes Incorporated | Description: MOSFET N-CH 600V 2.8A TO252 |
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DMNH4005SCT | Diodes Incorporated | Description: MOSFET N-CH 40V 150A TO220AB |
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DMNH4005SCTQ | Diodes Incorporated | Description: MOSFET N-CH 40V 150A TO220AB |
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DMNH4005SPSQ-13 | Diodes Incorporated | Description: MOSFET N-CH 40V 80A PWRDI5060-8 |
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DMNH4015SSD-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 11A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1938pF @ 15V Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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DMNH4026SSD-13 | Diodes Incorporated | Description: MOSFET 2 N-CHANNEL 7.5A 8SO |
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DMNH4026SSDQ-13 | Diodes Incorporated | Description: MOSFET 2 N-CHANNEL 7.5A 8SO |
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DMP1011LFV-13 | Diodes Incorporated | Description: MOSFET P-CH 12V 19A POWERDI3333 |
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DMP1011LFV-7 | Diodes Incorporated | Description: MOSFET P-CH 12V 19A POWERDI3333 |
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DMP2005UFG-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 89A POWERDI3333 |
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DMP2021UFDE-7 | Diodes Incorporated |
Description: MOSFET P-CH 20V 11.1A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V |
на замовлення 42000 шт: термін постачання 21-31 дні (днів) |
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DMP2035UFDF-13 | Diodes Incorporated |
Description: MOSFET P-CH 20V 8.1A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 6.4A, 4.5V Power Dissipation (Max): 2.03W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 15 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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DMP2035UFDF-7 | Diodes Incorporated |
Description: MOSFET P-CH 20V 8.1A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 6.4A, 4.5V Power Dissipation (Max): 2.03W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 15 V |
на замовлення 945000 шт: термін постачання 21-31 дні (днів) |
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DMP2035UVTQ-7 | Diodes Incorporated |
Description: MOSFET P-CH 20V 7.2A TSOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TSOT-23-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 63000 шт: термін постачання 21-31 дні (днів) |
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DMP2040UFDF-7 | Diodes Incorporated |
Description: MOSFET P-CH 20V 13A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 8.9A, 4.5V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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DMP2065UFDB-13 | Diodes Incorporated |
Description: MOSFET 2 P-CH 4.5A UDFN2020-6 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 752pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active |
на замовлення 60000 шт: термін постачання 21-31 дні (днів) |
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DMP2065UFDB-7 | Diodes Incorporated |
Description: MOSFET 2P-CH 20V 4.5A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.54W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 752pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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DMP2088LCP3-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 2.9A X2DSN1006-3 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DMP3007SFG-7 | Diodes Incorporated |
Description: MOSFET P-CH 30V 70A POWERDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 11.5A, 10V Power Dissipation (Max): 2.8W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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DMP3017SFV-13 | Diodes Incorporated |
Description: MOSFET P-CH 30V 40A POWERDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V Power Dissipation (Max): 31W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V |
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DMP3017SFV-7 | Diodes Incorporated |
Description: MOSFET P-CH 30V 40A POWERDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V Power Dissipation (Max): 31W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V |
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DMP3098LQ-7 | Diodes Incorporated |
Description: MOSFET P-CH 30V 3.8A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 3.8A, 10V Power Dissipation (Max): 1.08W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1008 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 207000 шт: термін постачання 21-31 дні (днів) |
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DMT2004UFG-13 | Diodes Incorporated |
Description: MOSFET N-CH 24V 70A POWERDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 12A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 1.45V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
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DMT2004UPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 24V 80A PWRDI5060-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 1.45V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
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DMT3020LFCL-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 7.6A 6UDFN |
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DMT31M6LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 35.8A PWRDI5060 |
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DSS5220TQ-13 | Diodes Incorporated | Description: TRANS PNP 20V 2A SOT23-3 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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GBL410_HF | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 1KV 4A GBL Packaging: Tube Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBL Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 749 шт: термін постачання 21-31 дні (днів) |
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KX31327009 | Diodes Incorporated | Description: CLOCK SAW OSCILLATOR SEAM3225 |
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MSB15MH-13 | Diodes Incorporated | Description: BRIDGE RECT 1P 1KV 1.5A 4MSBL |
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P4SMAJ11ADF-13 | Diodes Incorporated | Description: TVS DIODE 11VWM 18.2VC D-FLAT |
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P4SMAJ17ADF-13 | Diodes Incorporated | Description: TVS DIODE 17VWM 27.6VC D-FLAT |
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P4SMAJ7.0ADF-13 | Diodes Incorporated |
Description: TVS DIODE 7VWM 12VC D-FLAT Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 33.3A Voltage - Reverse Standoff (Typ): 7V Supplier Device Package: D-Flat Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.78V Voltage - Clamping (Max) @ Ipp: 12V Power - Peak Pulse: 400W Power Line Protection: No |
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P4SMAJ8.0ADF-13 | Diodes Incorporated |
Description: TVS DIODE 8VWM 13.6VC D-FLAT Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 29.4A Voltage - Reverse Standoff (Typ): 8V Supplier Device Package: D-Flat Unidirectional Channels: 1 Voltage - Breakdown (Min): 8.89V Voltage - Clamping (Max) @ Ipp: 13.6V Power - Peak Pulse: 400W Power Line Protection: No |
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PDS4200HQ-13 | Diodes Incorporated |
Description: DIODE SCHOTTKY 200V 4A POWERDI 5 Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Schottky Current - Average Rectified (Io): 4A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 4 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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PI3CH3305UE | Diodes Incorporated |
Description: BUS SWITCH 3V MSOP-8 Packaging: Tube Part Status: Obsolete |
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PI3CH3305UEX | Diodes Incorporated |
Description: BUS SWITCH 3V MSOP-8 Packaging: Tape & Reel (TR) Part Status: Obsolete |
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PI3CH3345LE | Diodes Incorporated |
Description: BUS SWITCH 3V TSSOP-20 Packaging: Tube Part Status: Active |
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PI3CH3345LEX | Diodes Incorporated |
Description: BUS SWITCH 3V TSSOP-20 Packaging: Tape & Reel (TR) Part Status: Active Package / Case: 20-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Circuit: 8 x 1:1 Type: Bus Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.97V ~ 3.63V Independent Circuits: 1 Voltage Supply Source: Single Supply Supplier Device Package: 20-TSSOP |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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PI3EQX7502AIZDE+DA | Diodes Incorporated | Description: IC REDRIVER USB 3.0 2CH 24TQFN |
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PI3EQX7502AIZDE+DAX | Diodes Incorporated | Description: IC REDRIVER USB 3.0 2CH 24TQFN |
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PI3EQX7502BZDE+DA | Diodes Incorporated | Description: IC REDRIVER USB 3.0 1CH 24TQFN |
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PI3EQX7502BZDE+DAX | Diodes Incorporated | Description: IC REDRIVER USB 3.0 1CH 24TQFN |
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PI3EQX7502MZDE+CWX | Diodes Incorporated | Description: IC REDRIVER USB 3.0 1CH 24TQFN |
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PI3HDMI511ZLE+DAX | Diodes Incorporated | Description: IC INTERFACE SPECIALIZED 32TQFN |
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PI3HDX511DZLE+DAX | Diodes Incorporated |
Description: IC INTERFACE SPECIALIZED 30TQFN Packaging: Tape & Reel (TR) Package / Case: 30-WFQFN Exposed Pad Mounting Type: Surface Mount Voltage - Supply: 3.3V Applications: HDMI Redriver, Level Shifter Supplier Device Package: 30-TQFN (2.5x4.5) Part Status: Active |
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PI3HDX511FZLIEX | Diodes Incorporated |
Description: IC INTERFACE SPECIALIZED 40TQFN Packaging: Tape & Reel (TR) Package / Case: 40-WFQFN Exposed Pad Mounting Type: Surface Mount Voltage - Supply: 3.3V Applications: HDMI Redriver, Level Shifter Supplier Device Package: 40-TQFN (3x6) Part Status: Obsolete |
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PI3PCIE3415AZHEX | Diodes Incorporated |
Description: IC INTERFACE SPECIALIZED 42TQFN Packaging: Tape & Reel (TR) Package / Case: 42-VFQFN Exposed Pad Mounting Type: Surface Mount Voltage - Supply: 3V ~ 3.6V Applications: PCIe Supplier Device Package: 42-TQFN (9x3.5) |
на замовлення 3500 шт: термін постачання 21-31 дні (днів) |
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PI3USB10MZEE+DMX | Diodes Incorporated | Description: IC USB SWITCH DUAL 2X1 12TDFN |
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PI3USB10MZKE+DMX | Diodes Incorporated | Description: IC USB SWITCH DUAL 2X1 12TQFN |
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PI3USB32224BXEAEX | Diodes Incorporated | Description: IC SWITCH SPST USB 2.0 8TQFN |
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PI4IOE5V9520XTEX | Diodes Incorporated | Description: INTERFACE IO EXPANDER U-QFN1616- |
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PI4IOE5V9521XTEX | Diodes Incorporated | Description: INTERFACE IO EXPANDER U-QFN1616- |
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PI4IOE5V9522UEX | Diodes Incorporated | Description: IC I/O EXPANDER 4 BIT 8-MSOP |
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PI4IOE5V9538LEX | Diodes Incorporated | Description: IC I/O EXPANDER 8-BIT 16TSSOP |
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PI4IOE5V9570UEX | Diodes Incorporated | Description: IC I/O EXPANDER 4 BIT 8-MSOP |
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PI4MSD5V9545ALE | Diodes Incorporated | Description: IC BUS SWITCH 2 X 1:4 20TSSOP |
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PI4ULS5V102UE | Diodes Incorporated | Description: IC TRNSLTR BIDIRECTIONAL 8MSOP |
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PI5A3157BC6E+DMX | Diodes Incorporated |
Description: IC SWITCH SPDTX1 13OHM SOT363-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 13Ohm -3db Bandwidth: 250MHz Supplier Device Package: SOT-363-6 (SC-70) Voltage - Supply, Single (V+): 1.65V ~ 5.5V Charge Injection: 7pC Crosstalk: -54dB @ 10MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 150mOhm Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns Channel Capacitance (CS(off), CD(off)): 2.3pF Current - Leakage (IS(off)) (Max): 100nA Number of Circuits: 1 |
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PI5A3157BC6EX-1507 | Diodes Incorporated |
Description: IC SWITCH SPDTX1 13OHM SOT363-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 13Ohm -3db Bandwidth: 250MHz Supplier Device Package: SOT-363-6 (SC-70) Voltage - Supply, Single (V+): 1.65V ~ 5.5V Charge Injection: 7pC Crosstalk: -54dB @ 10MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 150mOhm Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns Channel Capacitance (CS(off), CD(off)): 2.3pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 1 |
товар відсутній |
DMN60H3D5SK3-13 |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 600V 2.8A TO252
Description: MOSFET N-CH 600V 2.8A TO252
товар відсутній
DMNH4005SPSQ-13 |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 80A PWRDI5060-8
Description: MOSFET N-CH 40V 80A PWRDI5060-8
товар відсутній
DMNH4015SSD-13 |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 11A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1938pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2N-CH 11A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1938pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 23.12 грн |
DMNH4026SSD-13 |
Виробник: Diodes Incorporated
Description: MOSFET 2 N-CHANNEL 7.5A 8SO
Description: MOSFET 2 N-CHANNEL 7.5A 8SO
товар відсутній
DMNH4026SSDQ-13 |
Виробник: Diodes Incorporated
Description: MOSFET 2 N-CHANNEL 7.5A 8SO
Description: MOSFET 2 N-CHANNEL 7.5A 8SO
товар відсутній
DMP1011LFV-13 |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 12V 19A POWERDI3333
Description: MOSFET P-CH 12V 19A POWERDI3333
товар відсутній
DMP1011LFV-7 |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 12V 19A POWERDI3333
Description: MOSFET P-CH 12V 19A POWERDI3333
товар відсутній
DMP2005UFG-7 |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 89A POWERDI3333
Description: MOSFET P-CH 20V 89A POWERDI3333
товар відсутній
DMP2021UFDE-7 |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 11.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V
Description: MOSFET P-CH 20V 11.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V
на замовлення 42000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 12.47 грн |
6000+ | 11.4 грн |
9000+ | 10.58 грн |
30000+ | 9.7 грн |
DMP2035UFDF-13 |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 8.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.4A, 4.5V
Power Dissipation (Max): 2.03W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 15 V
Description: MOSFET P-CH 20V 8.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.4A, 4.5V
Power Dissipation (Max): 2.03W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 15 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 7.75 грн |
DMP2035UFDF-7 |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 8.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.4A, 4.5V
Power Dissipation (Max): 2.03W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 15 V
Description: MOSFET P-CH 20V 8.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.4A, 4.5V
Power Dissipation (Max): 2.03W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 15 V
на замовлення 945000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 9.2 грн |
6000+ | 8.49 грн |
9000+ | 7.65 грн |
30000+ | 7.07 грн |
75000+ | 6.64 грн |
DMP2035UVTQ-7 |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 7.2A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 20V 7.2A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 63000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 8.98 грн |
6000+ | 8.29 грн |
9000+ | 7.46 грн |
30000+ | 6.9 грн |
DMP2040UFDF-7 |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 13A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 8.9A, 4.5V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V
Description: MOSFET P-CH 20V 13A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 8.9A, 4.5V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 10.13 грн |
6000+ | 9.26 грн |
9000+ | 8.6 грн |
DMP2065UFDB-13 |
Виробник: Diodes Incorporated
Description: MOSFET 2 P-CH 4.5A UDFN2020-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 752pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Description: MOSFET 2 P-CH 4.5A UDFN2020-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 752pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 11.53 грн |
30000+ | 10.53 грн |
50000+ | 10.42 грн |
DMP2065UFDB-7 |
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 20V 4.5A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.54W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 752pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Description: MOSFET 2P-CH 20V 4.5A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.54W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 752pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 11.05 грн |
6000+ | 10.1 грн |
9000+ | 9.38 грн |
DMP2088LCP3-7 |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 2.9A X2DSN1006-3
Description: MOSFET P-CH 20V 2.9A X2DSN1006-3
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 10.39 грн |
DMP3007SFG-7 |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 70A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 11.5A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V
Description: MOSFET P-CH 30V 70A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 11.5A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2000+ | 21.82 грн |
6000+ | 19.91 грн |
DMP3017SFV-13 |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 40A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Power Dissipation (Max): 31W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V
Description: MOSFET P-CH 30V 40A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Power Dissipation (Max): 31W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V
товар відсутній
DMP3017SFV-7 |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 40A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Power Dissipation (Max): 31W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V
Description: MOSFET P-CH 30V 40A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Power Dissipation (Max): 31W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V
товар відсутній
DMP3098LQ-7 |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 3.8A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.8A, 10V
Power Dissipation (Max): 1.08W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1008 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 3.8A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.8A, 10V
Power Dissipation (Max): 1.08W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1008 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 207000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 6.79 грн |
6000+ | 6.27 грн |
9000+ | 5.64 грн |
30000+ | 5.21 грн |
75000+ | 4.9 грн |
DMT2004UFG-13 |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 24V 70A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 12A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 24V 70A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 12A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
DMT2004UPS-13 |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 24V 80A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 24V 80A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 16.26 грн |
5000+ | 14.83 грн |
12500+ | 13.73 грн |
DMT31M6LPS-13 |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 35.8A PWRDI5060
Description: MOSFET N-CH 30V 35.8A PWRDI5060
товар відсутній
DSS5220TQ-13 |
Виробник: Diodes Incorporated
Description: TRANS PNP 20V 2A SOT23-3
Description: TRANS PNP 20V 2A SOT23-3
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 6.59 грн |
GBL410_HF |
Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 4A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 4A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 749 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 60.44 грн |
25+ | 46.7 грн |
100+ | 37 грн |
500+ | 29.43 грн |
P4SMAJ11ADF-13 |
Виробник: Diodes Incorporated
Description: TVS DIODE 11VWM 18.2VC D-FLAT
Description: TVS DIODE 11VWM 18.2VC D-FLAT
товар відсутній
P4SMAJ17ADF-13 |
Виробник: Diodes Incorporated
Description: TVS DIODE 17VWM 27.6VC D-FLAT
Description: TVS DIODE 17VWM 27.6VC D-FLAT
товар відсутній
P4SMAJ7.0ADF-13 |
Виробник: Diodes Incorporated
Description: TVS DIODE 7VWM 12VC D-FLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 33.3A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: TVS DIODE 7VWM 12VC D-FLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 33.3A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 400W
Power Line Protection: No
товар відсутній
P4SMAJ8.0ADF-13 |
Виробник: Diodes Incorporated
Description: TVS DIODE 8VWM 13.6VC D-FLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 29.4A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.89V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: TVS DIODE 8VWM 13.6VC D-FLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 29.4A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.89V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 400W
Power Line Protection: No
товар відсутній
PDS4200HQ-13 |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 200V 4A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 4 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE SCHOTTKY 200V 4A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 4 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 22.34 грн |
10000+ | 19.92 грн |
PI3CH3305UE |
товар відсутній
PI3CH3305UEX |
Виробник: Diodes Incorporated
Description: BUS SWITCH 3V MSOP-8
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: BUS SWITCH 3V MSOP-8
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товар відсутній
PI3CH3345LE |
товар відсутній
PI3CH3345LEX |
Виробник: Diodes Incorporated
Description: BUS SWITCH 3V TSSOP-20
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 8 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.97V ~ 3.63V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 20-TSSOP
Description: BUS SWITCH 3V TSSOP-20
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 8 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.97V ~ 3.63V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 20-TSSOP
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 63.22 грн |
6000+ | 58.62 грн |
PI3EQX7502AIZDE+DA |
Виробник: Diodes Incorporated
Description: IC REDRIVER USB 3.0 2CH 24TQFN
Description: IC REDRIVER USB 3.0 2CH 24TQFN
товар відсутній
PI3EQX7502AIZDE+DAX |
Виробник: Diodes Incorporated
Description: IC REDRIVER USB 3.0 2CH 24TQFN
Description: IC REDRIVER USB 3.0 2CH 24TQFN
товар відсутній
PI3EQX7502BZDE+DA |
Виробник: Diodes Incorporated
Description: IC REDRIVER USB 3.0 1CH 24TQFN
Description: IC REDRIVER USB 3.0 1CH 24TQFN
товар відсутній
PI3EQX7502BZDE+DAX |
Виробник: Diodes Incorporated
Description: IC REDRIVER USB 3.0 1CH 24TQFN
Description: IC REDRIVER USB 3.0 1CH 24TQFN
товар відсутній
PI3EQX7502MZDE+CWX |
Виробник: Diodes Incorporated
Description: IC REDRIVER USB 3.0 1CH 24TQFN
Description: IC REDRIVER USB 3.0 1CH 24TQFN
товар відсутній
PI3HDMI511ZLE+DAX |
Виробник: Diodes Incorporated
Description: IC INTERFACE SPECIALIZED 32TQFN
Description: IC INTERFACE SPECIALIZED 32TQFN
товар відсутній
PI3HDX511DZLE+DAX |
Виробник: Diodes Incorporated
Description: IC INTERFACE SPECIALIZED 30TQFN
Packaging: Tape & Reel (TR)
Package / Case: 30-WFQFN Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 3.3V
Applications: HDMI Redriver, Level Shifter
Supplier Device Package: 30-TQFN (2.5x4.5)
Part Status: Active
Description: IC INTERFACE SPECIALIZED 30TQFN
Packaging: Tape & Reel (TR)
Package / Case: 30-WFQFN Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 3.3V
Applications: HDMI Redriver, Level Shifter
Supplier Device Package: 30-TQFN (2.5x4.5)
Part Status: Active
товар відсутній
PI3HDX511FZLIEX |
Виробник: Diodes Incorporated
Description: IC INTERFACE SPECIALIZED 40TQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 3.3V
Applications: HDMI Redriver, Level Shifter
Supplier Device Package: 40-TQFN (3x6)
Part Status: Obsolete
Description: IC INTERFACE SPECIALIZED 40TQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 3.3V
Applications: HDMI Redriver, Level Shifter
Supplier Device Package: 40-TQFN (3x6)
Part Status: Obsolete
товар відсутній
PI3PCIE3415AZHEX |
Виробник: Diodes Incorporated
Description: IC INTERFACE SPECIALIZED 42TQFN
Packaging: Tape & Reel (TR)
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 3V ~ 3.6V
Applications: PCIe
Supplier Device Package: 42-TQFN (9x3.5)
Description: IC INTERFACE SPECIALIZED 42TQFN
Packaging: Tape & Reel (TR)
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 3V ~ 3.6V
Applications: PCIe
Supplier Device Package: 42-TQFN (9x3.5)
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3500+ | 81.67 грн |
PI3USB10MZEE+DMX |
Виробник: Diodes Incorporated
Description: IC USB SWITCH DUAL 2X1 12TDFN
Description: IC USB SWITCH DUAL 2X1 12TDFN
товар відсутній
PI3USB10MZKE+DMX |
Виробник: Diodes Incorporated
Description: IC USB SWITCH DUAL 2X1 12TQFN
Description: IC USB SWITCH DUAL 2X1 12TQFN
товар відсутній
PI3USB32224BXEAEX |
Виробник: Diodes Incorporated
Description: IC SWITCH SPST USB 2.0 8TQFN
Description: IC SWITCH SPST USB 2.0 8TQFN
товар відсутній
PI4IOE5V9520XTEX |
Виробник: Diodes Incorporated
Description: INTERFACE IO EXPANDER U-QFN1616-
Description: INTERFACE IO EXPANDER U-QFN1616-
товар відсутній
PI4IOE5V9521XTEX |
Виробник: Diodes Incorporated
Description: INTERFACE IO EXPANDER U-QFN1616-
Description: INTERFACE IO EXPANDER U-QFN1616-
товар відсутній
PI4IOE5V9522UEX |
Виробник: Diodes Incorporated
Description: IC I/O EXPANDER 4 BIT 8-MSOP
Description: IC I/O EXPANDER 4 BIT 8-MSOP
товар відсутній
PI4IOE5V9538LEX |
Виробник: Diodes Incorporated
Description: IC I/O EXPANDER 8-BIT 16TSSOP
Description: IC I/O EXPANDER 8-BIT 16TSSOP
товар відсутній
PI4IOE5V9570UEX |
Виробник: Diodes Incorporated
Description: IC I/O EXPANDER 4 BIT 8-MSOP
Description: IC I/O EXPANDER 4 BIT 8-MSOP
товар відсутній
PI4MSD5V9545ALE |
Виробник: Diodes Incorporated
Description: IC BUS SWITCH 2 X 1:4 20TSSOP
Description: IC BUS SWITCH 2 X 1:4 20TSSOP
товар відсутній
PI4ULS5V102UE |
Виробник: Diodes Incorporated
Description: IC TRNSLTR BIDIRECTIONAL 8MSOP
Description: IC TRNSLTR BIDIRECTIONAL 8MSOP
товар відсутній
PI5A3157BC6E+DMX |
Виробник: Diodes Incorporated
Description: IC SWITCH SPDTX1 13OHM SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 13Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: SOT-363-6 (SC-70)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 2.3pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
Description: IC SWITCH SPDTX1 13OHM SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 13Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: SOT-363-6 (SC-70)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 2.3pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
товар відсутній
PI5A3157BC6EX-1507 |
Виробник: Diodes Incorporated
Description: IC SWITCH SPDTX1 13OHM SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 13Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: SOT-363-6 (SC-70)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 2.3pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
Description: IC SWITCH SPDTX1 13OHM SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 13Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: SOT-363-6 (SC-70)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 2.3pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
товар відсутній