Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (72977) > Сторінка 374 з 1217
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AP9101CK6-AETRG1 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL SOT26 Part Status: Active Fault Protection: Over Current, Over Voltage Supplier Device Package: SOT-26 Battery Chemistry: Lithium Ion/Polymer Operating Temperature: -40°C ~ 85°C (TA) Function: Battery Protection Package / Case: SOT-23-6 Packaging: Cut Tape (CT) Mounting Type: Surface Mount Number of Cells: 1 |
товару немає в наявності |
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AZ431LBKTR-G1 | Diodes Incorporated |
Description: IC VREF SHUNT ADJ 1% SOT23-5Packaging: Cut Tape (CT) Tolerance: ±1% Package / Case: SC-74A, SOT-753 Temperature Coefficient: 20ppm/°C Typical Output Type: Adjustable Mounting Type: Surface Mount Reference Type: Shunt Operating Temperature: -40°C ~ 125°C (TA) Supplier Device Package: SOT-23-5 Voltage - Output (Min/Fixed): 1.24V Part Status: Active Current - Cathode: 80 µA Current - Output: 100 mA Voltage - Output (Max): 18 V |
на замовлення 5354 шт: термін постачання 21-31 дні (днів) |
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BAV170Q-7-F | Diodes Incorporated |
Description: DIODE ARRAY GP 85V 125MA SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 125mA (DC) Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 85 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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DDTC124EUA-7-F | Diodes Incorporated |
Description: TRANS PREBIAS NPN 50V SOT323Resistors Included: R1 and R2 Resistor - Emitter Base (R2): 22 kOhms Resistor - Base (R1): 22 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SOT-323 DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
на замовлення 1063 шт: термін постачання 21-31 дні (днів) |
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DDZ6V2BQ-7 | Diodes Incorporated |
Description: DIODE ZENER 6.2V 470MW SOD123Packaging: Cut Tape (CT) Tolerance: ±3% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 7 Ohms Supplier Device Package: SOD-123 Part Status: Active Power - Max: 470 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 500 nA @ 4 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3046834 шт: термін постачання 21-31 дні (днів) |
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DMC1229UFDB-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 12V 5.6A 6UDFNPackaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.4W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4710 шт: термін постачання 21-31 дні (днів) |
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DMG1016VQ-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 20V 0.87A SOT563Part Status: Active Supplier Device Package: SOT-563 Vgs(th) (Max) @ Id: 1V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V Current - Continuous Drain (Id) @ 25°C: 870mA, 640mA Drain to Source Voltage (Vdss): 20V Power - Max: 530mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
на замовлення 173455 шт: термін постачання 21-31 дні (днів) |
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DMG2301L-7 | Diodes Incorporated |
Description: MOSFET P-CH 20V 3A SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 476 pF @ 10 V |
на замовлення 4357 шт: термін постачання 21-31 дні (днів) |
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DMMT3904WQ-7-F | Diodes Incorporated |
Description: TRANS 2NPN 40V 200MA SOT-363Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: SOT-363 Frequency - Transition: 300MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Voltage - Collector Emitter Breakdown (Max): 40V Current - Collector (Ic) (Max): 200mA Power - Max: 200mW Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: 2 NPN (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
на замовлення 6990 шт: термін постачання 21-31 дні (днів) |
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DMN65D8LQ-7 | Diodes Incorporated |
Description: MOSFET N-CH 60V 310MA SOT23Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 370mW (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
на замовлення 12579 шт: термін постачання 21-31 дні (днів) |
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DMP1045U-7 | Diodes Incorporated |
Description: MOSFET P-CH 12V 4A SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 4A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1357 pF @ 10 V |
на замовлення 29458 шт: термін постачання 21-31 дні (днів) |
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DMP2160UFDB-7 | Diodes Incorporated |
Description: MOSFET 2P-CH 20V 3.8A 6UDFNSupplier Device Package: U-DFN2020-6 (Type B) Vgs(th) (Max) @ Id: 900mV @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 10V Current - Continuous Drain (Id) @ 25°C: 3.8A Drain to Source Voltage (Vdss): 20V Power - Max: 1.4W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 420134 шт: термін постачання 21-31 дні (днів) |
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DMP32D4SFB-7B | Diodes Incorporated |
Description: MOSFET P-CH 30V 400MA 3DFNDrive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Supplier Device Package: X1-DFN1006-3 Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-UFDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V |
на замовлення 6657 шт: термін постачання 21-31 дні (днів) |
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DRTR5V0U1LP-7B | Diodes Incorporated |
Description: TVS DIODE 5.5VWM 10VC DFN1006-2Unidirectional Channels: 1 Supplier Device Package: X1-DFN1006-2 Voltage - Reverse Standoff (Typ): 5.5V (Max) Current - Peak Pulse (10/1000µs): 5A (8/20µs) Capacitance @ Frequency: 1pF @ 1MHz Operating Temperature: -65°C ~ 150°C (TJ) Qualification: AEC-Q101 Grade: Automotive Voltage - Clamping (Max) @ Ipp: 10V (Typ) Voltage - Breakdown (Min): 6V Power Line Protection: No Packaging: Cut Tape (CT) Type: Zener Mounting Type: Surface Mount Package / Case: 0402 (1006 Metric) |
на замовлення 8909 шт: термін постачання 21-31 дні (днів) |
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FMMT558QTA | Diodes Incorporated |
Description: TRANS PNP 400V 0.15A SOT-23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 6mA, 50mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Frequency - Transition: 50MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 500 mW |
на замовлення 20998 шт: термін постачання 21-31 дні (днів) |
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MMBTA06Q-7-F | Diodes Incorporated |
Description: TRANS NPN 80V 0.5A SOT-23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 350 mW Grade: Automotive Qualification: AEC-Q101 |
на замовлення 15144 шт: термін постачання 21-31 дні (днів) |
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PAM2804AAB010 | Diodes Incorporated |
Description: IC LED DRIVER RGLTR 1A TSOT25Packaging: Cut Tape (CT) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 1.5MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 85°C (TA) Current - Output / Channel: 1A Internal Switch(s): Yes Topology: Step-Down (Buck) Supplier Device Package: TSOT-25 Voltage - Supply (Min): 2.5V Voltage - Supply (Max): 6V Part Status: Active |
на замовлення 52534 шт: термін постачання 21-31 дні (днів) |
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PAM8304AYR | Diodes Incorporated |
Description: IC AMP CLASS D MONO 3W DFN3030-8Packaging: Cut Tape (CT) Features: Depop, Short-Circuit and Thermal Protection Package / Case: 8-WDFN Exposed Pad Output Type: 1-Channel (Mono) Mounting Type: Surface Mount Type: Class D Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.8V ~ 6V Max Output Power x Channels @ Load: 3W x 1 @ 4Ohm Supplier Device Package: 8-DFN (3x3) Part Status: Active |
на замовлення 189075 шт: термін постачання 21-31 дні (днів) |
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PAM8403DR-H | Diodes Incorporated |
Description: IC AMP CLASS D STEREO 3W 16SOPPackaging: Cut Tape (CT) Features: Depop, Short-Circuit and Thermal Protection Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: 2-Channel (Stereo) Mounting Type: Surface Mount Type: Class D Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.8V ~ 5.5V Max Output Power x Channels @ Load: 3W x 2 @ 4Ohm Supplier Device Package: 16-SOP Part Status: Active |
на замовлення 5516 шт: термін постачання 21-31 дні (днів) |
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PAM8610TR | Diodes Incorporated |
Description: IC AMP CLASS D STEREO 10W 40QFNPackaging: Cut Tape (CT) Features: Depop, Mute, Short-Circuit and Thermal Protection, Shutdown, Volume Control Package / Case: 40-WFQFN Exposed Pad Output Type: 2-Channel (Stereo) Mounting Type: Surface Mount Type: Class D Operating Temperature: -20°C ~ 85°C (TA) Voltage - Supply: 7V ~ 15V Max Output Power x Channels @ Load: 10W x 2 @ 8Ohm Supplier Device Package: 40-QFN (6x6) Part Status: Active |
на замовлення 4049 шт: термін постачання 21-31 дні (днів) |
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PAM8908JER | Diodes Incorporated |
Description: IC AMP CLASS AB STER 35MW 16TQFNPackaging: Cut Tape (CT) Features: Short-Circuit and Thermal Protection Package / Case: 16-UFQFN Exposed Pad Output Type: 2-Channel (Stereo) with Stereo Headphones Mounting Type: Surface Mount Type: Class AB Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.5V ~ 5.5V Max Output Power x Channels @ Load: 35mW x 2 @ 16Ohm Supplier Device Package: U-QFN3030-16 Part Status: Active |
на замовлення 8233 шт: термін постачання 21-31 дні (днів) |
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PI3DPX1207BZHEX | Diodes Incorporated |
Description: ACTIVE DISPLAY V-QFN3590-42 T&RPart Status: Obsolete Signal Conditioning: Input Equalization Supplier Device Package: 42-TQFN (9x3.5) Data Rate (Max): 10Gbps Applications: I2C Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Input: CML Type: Buffer, ReDriver Output: CML Mounting Type: Surface Mount Number of Channels: 4 Package / Case: 42-VFQFN Exposed Pad Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PI3DPX1203BZLEX | Diodes Incorporated |
Description: ACTIVE DISPLAY W-QFN3060-32 T&RPackaging: Cut Tape (CT) Package / Case: 32-WFQFN Exposed Pad Number of Channels: 4 Mounting Type: Surface Mount Output: DisplayPort Type: Buffer, ReDriver Input: DisplayPort Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Applications: DisplayPort Current - Supply: 243mA Data Rate (Max): 8.1Gbps Supplier Device Package: 32-TQFN (3x6) Signal Conditioning: Input Equalization Part Status: Active |
на замовлення 44515 шт: термін постачання 21-31 дні (днів) |
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DMC2038LVTQ-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 20V 3.7A TSOT23-6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 2.6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V, 705pF @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V, 74mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V, 10nC @ 4.5V FET Feature: Logic Level Gate, 1.8V Drive Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TSOT-23-6 Part Status: Not For New Designs Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6726 шт: термін постачання 21-31 дні (днів) |
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PI4IOE5V96248ZLEX | Diodes Incorporated |
Description: IC XPNDR 1MHZ I2C 56TQFNPart Status: Active Current - Output Source/Sink: 42mA, 480µA Supplier Device Package: 56-TQFN (7x7) Interrupt Output: Yes Clock Frequency: 1 MHz Voltage - Supply: 2.3V ~ 5.5V Operating Temperature: -40°C ~ 85°C Number of I/O: 48 Interface: I2C Mounting Type: Surface Mount Output Type: Push-Pull Package / Case: 56-WFQFN Exposed Pad Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified |
на замовлення 4780 шт: термін постачання 21-31 дні (днів) |
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D15V0M1U2LP3-7 | Diodes Incorporated |
Description: TVS DIODE 15VWM 24V X3DFN06032Voltage - Reverse Standoff (Typ): 15V (Max) Current - Peak Pulse (10/1000µs): 3A (8/20µs) Capacitance @ Frequency: 19pF @ 1MHz Applications: General Purpose Operating Temperature: -65°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: 0201 (0603 Metric) Packaging: Tape & Reel (TR) Part Status: Active Power Line Protection: No Power - Peak Pulse: 75W Voltage - Clamping (Max) @ Ipp: 24V Voltage - Breakdown (Min): 15.5V Unidirectional Channels: 1 Supplier Device Package: X3-DFN0603-2 |
на замовлення 260000 шт: термін постачання 21-31 дні (днів) |
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DBF2510-13 | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 1KV 2.5A DBFCurrent - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 2.5 A Current - Average Rectified (Io): 2.5 A Voltage - Peak Reverse (Max): 1 kV Part Status: Active Supplier Device Package: DBF Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMC3025LSDQ-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 6.5A 8SOQualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.1nC @ 4.5V Rds On (Max) @ Id, Vgs: 20mOhm @ 7.4A, 10V, 45mOhm @ 5.2A, 10V Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V, 590pF @ 25V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 4.2A (Ta) Drain to Source Voltage (Vdss): 30V Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Power - Max: 1.2W (Ta) Technology: MOSFET (Metal Oxide) |
на замовлення 477500 шт: термін постачання 21-31 дні (днів) |
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DMG4822SSDQ-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 10A 8SOPart Status: Active Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 1.42W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
на замовлення 582500 шт: термін постачання 21-31 дні (днів) |
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DMP6050SPS-13 | Diodes Incorporated |
Description: MOSFET P-CH 60V 5.7A PWRDI5060-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V Power Dissipation (Max): 1.3W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2163 pF @ 30 V |
на замовлення 725000 шт: термін постачання 21-31 дні (днів) |
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DMTH4011SPD-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 40V 11.1A PWRDI50Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.6W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMTH4011SPDQ-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 40V 11.1A PWRDI50Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: PowerDI5060-8 Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 2.6W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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DMTH43M8LPSQ-13 | Diodes Incorporated |
Description: MOSFET N-CH 40V 22A PWRDI5060Qualification: AEC-Q101 Grade: Automotive Power Dissipation (Max): 2.7W (Ta) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 3367 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active Supplier Device Package: PowerDI5060-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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D15V0M1U2LP3-7 | Diodes Incorporated |
Description: TVS DIODE 15VWM 24V X3DFN06032Voltage - Reverse Standoff (Typ): 15V (Max) Current - Peak Pulse (10/1000µs): 3A (8/20µs) Capacitance @ Frequency: 19pF @ 1MHz Applications: General Purpose Operating Temperature: -65°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: 0201 (0603 Metric) Packaging: Cut Tape (CT) Part Status: Active Power Line Protection: No Power - Peak Pulse: 75W Voltage - Clamping (Max) @ Ipp: 24V Voltage - Breakdown (Min): 15.5V Unidirectional Channels: 1 Supplier Device Package: X3-DFN0603-2 |
на замовлення 263736 шт: термін постачання 21-31 дні (днів) |
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DBF2510-13 | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 1KV 2.5A DBFCurrent - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 2.5 A Current - Average Rectified (Io): 2.5 A Voltage - Peak Reverse (Max): 1 kV Part Status: Active Supplier Device Package: DBF Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 444 шт: термін постачання 21-31 дні (днів) |
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DMC3025LSDQ-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 6.5A 8SOVgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.1nC @ 4.5V Rds On (Max) @ Id, Vgs: 20mOhm @ 7.4A, 10V, 45mOhm @ 5.2A, 10V Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V, 590pF @ 25V Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-SO Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 4.2A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 1.2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 480161 шт: термін постачання 21-31 дні (днів) |
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DMG4822SSDQ-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 10A 8SOPart Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 1.42W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount |
на замовлення 589853 шт: термін постачання 21-31 дні (днів) |
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DMP6050SPS-13 | Diodes Incorporated |
Description: MOSFET P-CH 60V 5.7A PWRDI5060-8Input Capacitance (Ciss) (Max) @ Vds: 2163 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerDI5060-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.3W Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 725602 шт: термін постачання 21-31 дні (днів) |
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DMTH4011SPD-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 40V 11.1A PWRDI50Part Status: Active Supplier Device Package: PowerDI5060-8 Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 2.6W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 925 шт: термін постачання 21-31 дні (днів) |
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DMTH4011SPDQ-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 40V 11.1A PWRDI50Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: PowerDI5060-8 Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 2.6W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 3565 шт: термін постачання 21-31 дні (днів) |
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DMTH43M8LPSQ-13 | Diodes Incorporated |
Description: MOSFET N-CH 40V 22A PWRDI5060Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 3367 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active Supplier Device Package: PowerDI5060-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.7W (Ta) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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PI4IOE5V96224ZLEX | Diodes Incorporated |
Description: IC XPNDR 1MHZ I2C SMBUS 32TQFNInterrupt Output: Yes Clock Frequency: 1 MHz Voltage - Supply: 2.3V ~ 5.5V Operating Temperature: -40°C ~ 85°C Number of I/O: 24 Interface: I²C, SMBus Mounting Type: Surface Mount Output Type: Push-Pull Package / Case: 32-WFQFN Exposed Pad Features: POR Packaging: Cut Tape (CT) Part Status: Active Current - Output Source/Sink: 25mA Supplier Device Package: 32-TQFN (3x6) DigiKey Programmable: Not Verified |
на замовлення 10157 шт: термін постачання 21-31 дні (днів) |
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PI3WVR13412ZHEX | Diodes Incorporated |
Description: DISPLAY SWITCH V-QFN3590-42Packaging: Tape & Reel (TR) Features: HDMI Package / Case: 42-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C Applications: DisplayPort -3db Bandwidth: 7GHz Supplier Device Package: 42-TQFN (9x3.5) Voltage - Supply, Single (V+): 3V ~ 3.6V Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Part Status: Active Number of Channels: 4 |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
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PI3WVR13612ZLEX | Diodes Incorporated |
Description: DISPLAY SWITCH W-QFN3590-52Packaging: Tape & Reel (TR) Features: HDMI Package / Case: 52-WFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C Applications: DisplayPort -3db Bandwidth: 7GHz Supplier Device Package: 52-TQFN (3.5x9) Voltage - Supply, Single (V+): 3V ~ 3.6V Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Part Status: Active Number of Channels: 4 |
на замовлення 14000 шт: термін постачання 21-31 дні (днів) |
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PI3WVR13412ZHEX | Diodes Incorporated |
Description: DISPLAY SWITCH V-QFN3590-42Packaging: Cut Tape (CT) Features: HDMI Package / Case: 42-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C Applications: DisplayPort -3db Bandwidth: 7GHz Supplier Device Package: 42-TQFN (9x3.5) Voltage - Supply, Single (V+): 3V ~ 3.6V Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Part Status: Active Number of Channels: 4 |
на замовлення 9349 шт: термін постачання 21-31 дні (днів) |
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PI3WVR13612ZLEX | Diodes Incorporated |
Description: DISPLAY SWITCH W-QFN3590-52Packaging: Cut Tape (CT) Features: HDMI Package / Case: 52-WFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C Applications: DisplayPort -3db Bandwidth: 7GHz Supplier Device Package: 52-TQFN (3.5x9) Voltage - Supply, Single (V+): 3V ~ 3.6V Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Part Status: Active Number of Channels: 4 |
на замовлення 14918 шт: термін постачання 21-31 дні (днів) |
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ADTC114YUAQ-7 | Diodes Incorporated |
Description: TRANS PREBIAS NPN 0.1A SOT323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Supplier Device Package: SOT-323 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Power - Max: 330 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 1290 шт: термін постачання 21-31 дні (днів) |
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BCR421UFDQ-7 | Diodes Incorporated |
Description: IC LED DRVR LIN PWM 350MA 6DFNPackaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Voltage - Output: 40V Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Operating Temperature: -55°C ~ 150°C (TJ) Applications: Lighting, Signage Current - Output / Channel: 350mA Internal Switch(s): No Supplier Device Package: U-DFN2020-6 Dimming: PWM Voltage - Supply (Max): 18V Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 365130 шт: термін постачання 21-31 дні (днів) |
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DMP1009UFDF-7 | Diodes Incorporated |
Description: MOSFET P-CH 12V 15A 6UDFNPackaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V |
на замовлення 2398 шт: термін постачання 21-31 дні (днів) |
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DMP3013SFV-7 | Diodes Incorporated |
Description: MOSFET P-CH 30V 12A PWRDI3333Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 11.5A, 10V Power Dissipation (Max): 940mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1674 pF @ 15 V |
на замовлення 7050 шт: термін постачання 21-31 дні (днів) |
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DMP34M4SPS-13 | Diodes Incorporated |
Description: MOSFET P-CH 30V 135A PWRDI5060-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 135A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V Power Dissipation (Max): 1.5W Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V |
на замовлення 1097545 шт: термін постачання 21-31 дні (днів) |
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DMP4065SQ-7 | Diodes Incorporated |
Description: MOSFET P-CH 40V 2.4A SOT23 T&RCurrent - Continuous Drain (Id) @ 25°C: 2.4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 587 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 720mW (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 4.2A, 10V |
на замовлення 5736 шт: термін постачання 21-31 дні (днів) |
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DPD13AWF-7 | Diodes Incorporated | Description: TVS DIODES 13VWM 21.5VC SOD123F |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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HDS10M-13 | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 1KV 1A HDSPackaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: HDS Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 516116 шт: термін постачання 21-31 дні (днів) |
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PI3DPX1202A2ZBEX | Diodes Incorporated |
Description: DISPLAY SWITCH V-QFN7070-48 T&R |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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PI3PCIE3412AZHEX | Diodes Incorporated |
Description: PCI SWITCH 2:1 4 CHAN 42TQFNPackaging: Cut Tape (CT) Features: Bi-Directional, SATA, USB 3.0 Package / Case: 42-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Applications: PCI Express® On-State Resistance (Max): 5Ohm (Typ) -3db Bandwidth: 8.2GHz Supplier Device Package: 42-TQFN (9x3.5) Voltage - Supply, Single (V+): 3V ~ 3.6V Multiplexer/Demultiplexer Circuit: 2:1 Part Status: Active Number of Channels: 4 |
на замовлення 14473 шт: термін постачання 21-31 дні (днів) |
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PI3PCIE3412AZLEX | Diodes Incorporated |
Description: PCIE SWITCH W-QFN3060-40 T&R 3.5Multiplexer/Demultiplexer Circuit: 2:1 Voltage - Supply, Single (V+): 3V ~ 3.6V Supplier Device Package: 40-TQFN (3x6) -3db Bandwidth: 8.2GHz On-State Resistance (Max): 5Ohm (Typ) Applications: PCI Express® Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 40-WFQFN Exposed Pad Features: Bi-Directional, SATA, USB 3.0 Packaging: Cut Tape (CT) Number of Channels: 4 |
на замовлення 14000 шт: термін постачання 21-31 дні (днів) |
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PI4IOE5V6408ZTAEX | Diodes Incorporated |
Description: IC XPNDR 1MHZ I2C 16UQFNPackaging: Cut Tape (CT) Package / Case: 16-UFQFN Output Type: Push-Pull Mounting Type: Surface Mount Interface: I2C Number of I/O: 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 3.6V Clock Frequency: 1 MHz Interrupt Output: Yes Supplier Device Package: 16-UQFN (1.8x2.6) Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 760037 шт: термін постачання 21-31 дні (днів) |
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PI4IOE5V9535ZDEX | Diodes Incorporated |
Description: IC XPNDR 400KHZ I2C 24TQFNPackaging: Cut Tape (CT) Package / Case: 24-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C Number of I/O: 16 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.3V ~ 5.5V Clock Frequency: 400 kHz Interrupt Output: Yes Supplier Device Package: 24-TQFN (4x4) Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 29177 шт: термін постачання 21-31 дні (днів) |
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PI6CG15401ZHIEX | Diodes Incorporated |
Description: IC CLOCK GENERATOR 32TQFN |
товару немає в наявності |
В кошику од. на суму грн. |
| AP9101CK6-AETRG1 |
Виробник: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Part Status: Active
Fault Protection: Over Current, Over Voltage
Supplier Device Package: SOT-26
Battery Chemistry: Lithium Ion/Polymer
Operating Temperature: -40°C ~ 85°C (TA)
Function: Battery Protection
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Number of Cells: 1
Description: IC BATT PROT LI-ION 1CELL SOT26
Part Status: Active
Fault Protection: Over Current, Over Voltage
Supplier Device Package: SOT-26
Battery Chemistry: Lithium Ion/Polymer
Operating Temperature: -40°C ~ 85°C (TA)
Function: Battery Protection
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Number of Cells: 1
товару немає в наявності
В кошику
од. на суму грн.
| AZ431LBKTR-G1 |
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Виробник: Diodes Incorporated
Description: IC VREF SHUNT ADJ 1% SOT23-5
Packaging: Cut Tape (CT)
Tolerance: ±1%
Package / Case: SC-74A, SOT-753
Temperature Coefficient: 20ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 1.24V
Part Status: Active
Current - Cathode: 80 µA
Current - Output: 100 mA
Voltage - Output (Max): 18 V
Description: IC VREF SHUNT ADJ 1% SOT23-5
Packaging: Cut Tape (CT)
Tolerance: ±1%
Package / Case: SC-74A, SOT-753
Temperature Coefficient: 20ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 1.24V
Part Status: Active
Current - Cathode: 80 µA
Current - Output: 100 mA
Voltage - Output (Max): 18 V
на замовлення 5354 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 18.20 грн |
| 26+ | 12.11 грн |
| 29+ | 10.79 грн |
| 100+ | 8.67 грн |
| 250+ | 7.98 грн |
| 500+ | 7.57 грн |
| 1000+ | 7.11 грн |
| BAV170Q-7-F |
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Виробник: Diodes Incorporated
Description: DIODE ARRAY GP 85V 125MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 125mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY GP 85V 125MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 125mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| DDTC124EUA-7-F |
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Виробник: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT323
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS NPN 50V SOT323
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
на замовлення 1063 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 16.61 грн |
| 32+ | 9.68 грн |
| 100+ | 5.99 грн |
| 500+ | 4.11 грн |
| 1000+ | 3.62 грн |
| DDZ6V2BQ-7 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 6.2V 470MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±3%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 470 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 6.2V 470MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±3%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 470 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3046834 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 15.82 грн |
| 32+ | 9.60 грн |
| 100+ | 5.97 грн |
| 500+ | 4.11 грн |
| 1000+ | 3.62 грн |
| DMC1229UFDB-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 12V 5.6A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 12V 5.6A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4710 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 50.63 грн |
| 11+ | 30.40 грн |
| 100+ | 19.59 грн |
| 500+ | 14.01 грн |
| 1000+ | 12.60 грн |
| DMG1016VQ-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 20V 0.87A SOT563
Part Status: Active
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 870mA, 640mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 530mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: MOSFET N/P-CH 20V 0.87A SOT563
Part Status: Active
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 870mA, 640mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 530mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 173455 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.02 грн |
| 11+ | 28.34 грн |
| 100+ | 19.66 грн |
| 500+ | 14.41 грн |
| 1000+ | 11.71 грн |
| DMG2301L-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 476 pF @ 10 V
Description: MOSFET P-CH 20V 3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 476 pF @ 10 V
на замовлення 4357 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 20.57 грн |
| 25+ | 12.42 грн |
| 100+ | 7.78 грн |
| 500+ | 5.38 грн |
| 1000+ | 4.76 грн |
| DMMT3904WQ-7-F |
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Виробник: Diodes Incorporated
Description: TRANS 2NPN 40V 200MA SOT-363
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: SOT-363
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 200mA
Power - Max: 200mW
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: TRANS 2NPN 40V 200MA SOT-363
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: SOT-363
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 200mA
Power - Max: 200mW
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
на замовлення 6990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 42.72 грн |
| 13+ | 25.37 грн |
| 100+ | 16.23 грн |
| 500+ | 11.52 грн |
| 1000+ | 10.32 грн |
| DMN65D8LQ-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 310MA SOT23
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 370mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 60V 310MA SOT23
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 370mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
на замовлення 12579 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 13.45 грн |
| 39+ | 7.92 грн |
| 100+ | 4.90 грн |
| 500+ | 3.35 грн |
| 1000+ | 2.94 грн |
| DMP1045U-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 12V 4A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 4A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1357 pF @ 10 V
Description: MOSFET P-CH 12V 4A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 4A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1357 pF @ 10 V
на замовлення 29458 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 32.44 грн |
| 16+ | 19.20 грн |
| 100+ | 12.12 грн |
| 500+ | 8.51 грн |
| 1000+ | 7.58 грн |
| DMP2160UFDB-7 |
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Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 20V 3.8A 6UDFN
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 900mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 20V 3.8A 6UDFN
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 900mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 420134 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 38.77 грн |
| 13+ | 25.22 грн |
| 100+ | 17.14 грн |
| 500+ | 12.61 грн |
| 1000+ | 11.46 грн |
| DMP32D4SFB-7B |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 400MA 3DFN
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: X1-DFN1006-3
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Description: MOSFET P-CH 30V 400MA 3DFN
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: X1-DFN1006-3
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
на замовлення 6657 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 24.53 грн |
| 22+ | 14.48 грн |
| 100+ | 9.10 грн |
| 500+ | 6.33 грн |
| 1000+ | 5.62 грн |
| 2000+ | 5.02 грн |
| 5000+ | 4.30 грн |
| DRTR5V0U1LP-7B |
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Виробник: Diodes Incorporated
Description: TVS DIODE 5.5VWM 10VC DFN1006-2
Unidirectional Channels: 1
Supplier Device Package: X1-DFN1006-2
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 1pF @ 1MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Qualification: AEC-Q101
Grade: Automotive
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Packaging: Cut Tape (CT)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Description: TVS DIODE 5.5VWM 10VC DFN1006-2
Unidirectional Channels: 1
Supplier Device Package: X1-DFN1006-2
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 1pF @ 1MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Qualification: AEC-Q101
Grade: Automotive
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Packaging: Cut Tape (CT)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
на замовлення 8909 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 18.99 грн |
| 26+ | 12.04 грн |
| 100+ | 8.08 грн |
| 500+ | 5.83 грн |
| 1000+ | 5.25 грн |
| 2000+ | 4.74 грн |
| 5000+ | 4.12 грн |
| FMMT558QTA |
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Виробник: Diodes Incorporated
Description: TRANS PNP 400V 0.15A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 6mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 500 mW
Description: TRANS PNP 400V 0.15A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 6mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 500 mW
на замовлення 20998 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 52.22 грн |
| 10+ | 31.24 грн |
| 100+ | 20.13 грн |
| 500+ | 14.41 грн |
| 1000+ | 12.97 грн |
| MMBTA06Q-7-F |
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Виробник: Diodes Incorporated
Description: TRANS NPN 80V 0.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 350 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN 80V 0.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 350 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15144 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 18.20 грн |
| 29+ | 10.74 грн |
| 100+ | 6.69 грн |
| 500+ | 4.61 грн |
| 1000+ | 4.07 грн |
| PAM2804AAB010 |
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Виробник: Diodes Incorporated
Description: IC LED DRIVER RGLTR 1A TSOT25
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.5MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 1A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: TSOT-25
Voltage - Supply (Min): 2.5V
Voltage - Supply (Max): 6V
Part Status: Active
Description: IC LED DRIVER RGLTR 1A TSOT25
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.5MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 1A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: TSOT-25
Voltage - Supply (Min): 2.5V
Voltage - Supply (Max): 6V
Part Status: Active
на замовлення 52534 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.02 грн |
| 14+ | 23.01 грн |
| 25+ | 20.51 грн |
| 100+ | 16.73 грн |
| 250+ | 15.52 грн |
| 500+ | 14.79 грн |
| 1000+ | 13.96 грн |
| PAM8304AYR |
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Виробник: Diodes Incorporated
Description: IC AMP CLASS D MONO 3W DFN3030-8
Packaging: Cut Tape (CT)
Features: Depop, Short-Circuit and Thermal Protection
Package / Case: 8-WDFN Exposed Pad
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.8V ~ 6V
Max Output Power x Channels @ Load: 3W x 1 @ 4Ohm
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
Description: IC AMP CLASS D MONO 3W DFN3030-8
Packaging: Cut Tape (CT)
Features: Depop, Short-Circuit and Thermal Protection
Package / Case: 8-WDFN Exposed Pad
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.8V ~ 6V
Max Output Power x Channels @ Load: 3W x 1 @ 4Ohm
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
на замовлення 189075 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 41.93 грн |
| 11+ | 28.80 грн |
| 25+ | 25.78 грн |
| 100+ | 21.11 грн |
| 250+ | 19.64 грн |
| 500+ | 18.75 грн |
| 1000+ | 17.72 грн |
| PAM8403DR-H |
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Виробник: Diodes Incorporated
Description: IC AMP CLASS D STEREO 3W 16SOP
Packaging: Cut Tape (CT)
Features: Depop, Short-Circuit and Thermal Protection
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.8V ~ 5.5V
Max Output Power x Channels @ Load: 3W x 2 @ 4Ohm
Supplier Device Package: 16-SOP
Part Status: Active
Description: IC AMP CLASS D STEREO 3W 16SOP
Packaging: Cut Tape (CT)
Features: Depop, Short-Circuit and Thermal Protection
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.8V ~ 5.5V
Max Output Power x Channels @ Load: 3W x 2 @ 4Ohm
Supplier Device Package: 16-SOP
Part Status: Active
на замовлення 5516 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 54.59 грн |
| 10+ | 37.48 грн |
| 25+ | 33.67 грн |
| 100+ | 27.71 грн |
| 250+ | 25.84 грн |
| 500+ | 24.73 грн |
| 1000+ | 23.41 грн |
| PAM8610TR |
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Виробник: Diodes Incorporated
Description: IC AMP CLASS D STEREO 10W 40QFN
Packaging: Cut Tape (CT)
Features: Depop, Mute, Short-Circuit and Thermal Protection, Shutdown, Volume Control
Package / Case: 40-WFQFN Exposed Pad
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 7V ~ 15V
Max Output Power x Channels @ Load: 10W x 2 @ 8Ohm
Supplier Device Package: 40-QFN (6x6)
Part Status: Active
Description: IC AMP CLASS D STEREO 10W 40QFN
Packaging: Cut Tape (CT)
Features: Depop, Mute, Short-Circuit and Thermal Protection, Shutdown, Volume Control
Package / Case: 40-WFQFN Exposed Pad
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 7V ~ 15V
Max Output Power x Channels @ Load: 10W x 2 @ 8Ohm
Supplier Device Package: 40-QFN (6x6)
Part Status: Active
на замовлення 4049 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 189.09 грн |
| 10+ | 135.61 грн |
| 25+ | 124.00 грн |
| 100+ | 104.46 грн |
| 250+ | 98.77 грн |
| 500+ | 96.69 грн |
| PAM8908JER |
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Виробник: Diodes Incorporated
Description: IC AMP CLASS AB STER 35MW 16TQFN
Packaging: Cut Tape (CT)
Features: Short-Circuit and Thermal Protection
Package / Case: 16-UFQFN Exposed Pad
Output Type: 2-Channel (Stereo) with Stereo Headphones
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Max Output Power x Channels @ Load: 35mW x 2 @ 16Ohm
Supplier Device Package: U-QFN3030-16
Part Status: Active
Description: IC AMP CLASS AB STER 35MW 16TQFN
Packaging: Cut Tape (CT)
Features: Short-Circuit and Thermal Protection
Package / Case: 16-UFQFN Exposed Pad
Output Type: 2-Channel (Stereo) with Stereo Headphones
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Max Output Power x Channels @ Load: 35mW x 2 @ 16Ohm
Supplier Device Package: U-QFN3030-16
Part Status: Active
на замовлення 8233 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 52.22 грн |
| 10+ | 35.96 грн |
| 25+ | 32.33 грн |
| 100+ | 26.58 грн |
| 250+ | 24.78 грн |
| 500+ | 23.70 грн |
| 1000+ | 22.44 грн |
| PI3DPX1207BZHEX |
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Виробник: Diodes Incorporated
Description: ACTIVE DISPLAY V-QFN3590-42 T&R
Part Status: Obsolete
Signal Conditioning: Input Equalization
Supplier Device Package: 42-TQFN (9x3.5)
Data Rate (Max): 10Gbps
Applications: I2C
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Input: CML
Type: Buffer, ReDriver
Output: CML
Mounting Type: Surface Mount
Number of Channels: 4
Package / Case: 42-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: ACTIVE DISPLAY V-QFN3590-42 T&R
Part Status: Obsolete
Signal Conditioning: Input Equalization
Supplier Device Package: 42-TQFN (9x3.5)
Data Rate (Max): 10Gbps
Applications: I2C
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Input: CML
Type: Buffer, ReDriver
Output: CML
Mounting Type: Surface Mount
Number of Channels: 4
Package / Case: 42-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| PI3DPX1203BZLEX |
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Виробник: Diodes Incorporated
Description: ACTIVE DISPLAY W-QFN3060-32 T&R
Packaging: Cut Tape (CT)
Package / Case: 32-WFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: DisplayPort
Type: Buffer, ReDriver
Input: DisplayPort
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Applications: DisplayPort
Current - Supply: 243mA
Data Rate (Max): 8.1Gbps
Supplier Device Package: 32-TQFN (3x6)
Signal Conditioning: Input Equalization
Part Status: Active
Description: ACTIVE DISPLAY W-QFN3060-32 T&R
Packaging: Cut Tape (CT)
Package / Case: 32-WFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: DisplayPort
Type: Buffer, ReDriver
Input: DisplayPort
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Applications: DisplayPort
Current - Supply: 243mA
Data Rate (Max): 8.1Gbps
Supplier Device Package: 32-TQFN (3x6)
Signal Conditioning: Input Equalization
Part Status: Active
на замовлення 44515 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 167.73 грн |
| 10+ | 119.84 грн |
| 25+ | 109.46 грн |
| 100+ | 92.00 грн |
| 250+ | 86.89 грн |
| 500+ | 84.60 грн |
| DMC2038LVTQ-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 20V 3.7A TSOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 2.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V, 705pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V, 74mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V, 10nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-23-6
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 20V 3.7A TSOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 2.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V, 705pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V, 74mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V, 10nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-23-6
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6726 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 51.43 грн |
| 10+ | 31.08 грн |
| 100+ | 20.00 грн |
| 500+ | 14.28 грн |
| 1000+ | 12.83 грн |
| PI4IOE5V96248ZLEX |
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Виробник: Diodes Incorporated
Description: IC XPNDR 1MHZ I2C 56TQFN
Part Status: Active
Current - Output Source/Sink: 42mA, 480µA
Supplier Device Package: 56-TQFN (7x7)
Interrupt Output: Yes
Clock Frequency: 1 MHz
Voltage - Supply: 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Number of I/O: 48
Interface: I2C
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 56-WFQFN Exposed Pad
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Description: IC XPNDR 1MHZ I2C 56TQFN
Part Status: Active
Current - Output Source/Sink: 42mA, 480µA
Supplier Device Package: 56-TQFN (7x7)
Interrupt Output: Yes
Clock Frequency: 1 MHz
Voltage - Supply: 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Number of I/O: 48
Interface: I2C
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 56-WFQFN Exposed Pad
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
на замовлення 4780 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 189.09 грн |
| 10+ | 163.27 грн |
| 25+ | 154.35 грн |
| 100+ | 125.55 грн |
| 250+ | 119.11 грн |
| 500+ | 106.88 грн |
| 1000+ | 88.66 грн |
| D15V0M1U2LP3-7 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 15VWM 24V X3DFN06032
Voltage - Reverse Standoff (Typ): 15V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 19pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 75W
Voltage - Clamping (Max) @ Ipp: 24V
Voltage - Breakdown (Min): 15.5V
Unidirectional Channels: 1
Supplier Device Package: X3-DFN0603-2
Description: TVS DIODE 15VWM 24V X3DFN06032
Voltage - Reverse Standoff (Typ): 15V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 19pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 75W
Voltage - Clamping (Max) @ Ipp: 24V
Voltage - Breakdown (Min): 15.5V
Unidirectional Channels: 1
Supplier Device Package: X3-DFN0603-2
на замовлення 260000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.56 грн |
| 20000+ | 2.18 грн |
| 30000+ | 2.14 грн |
| DBF2510-13 |
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Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 2.5A DBF
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2.5 A
Current - Average Rectified (Io): 2.5 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: DBF
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: BRIDGE RECT 1PHASE 1KV 2.5A DBF
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2.5 A
Current - Average Rectified (Io): 2.5 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: DBF
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| DMC3025LSDQ-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 6.5A 8SO
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.4A, 10V, 45mOhm @ 5.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V, 590pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 4.2A (Ta)
Drain to Source Voltage (Vdss): 30V
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Power - Max: 1.2W (Ta)
Technology: MOSFET (Metal Oxide)
Description: MOSFET N/P-CH 30V 6.5A 8SO
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.4A, 10V, 45mOhm @ 5.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V, 590pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 4.2A (Ta)
Drain to Source Voltage (Vdss): 30V
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Power - Max: 1.2W (Ta)
Technology: MOSFET (Metal Oxide)
на замовлення 477500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 19.32 грн |
| 5000+ | 17.13 грн |
| 7500+ | 16.39 грн |
| 12500+ | 15.31 грн |
| DMG4822SSDQ-13 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 10A 8SO
Part Status: Active
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.42W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 10A 8SO
Part Status: Active
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.42W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
на замовлення 582500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 24.67 грн |
| 5000+ | 21.96 грн |
| 7500+ | 21.05 грн |
| 12500+ | 19.43 грн |
| DMP6050SPS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 60V 5.7A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.3W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2163 pF @ 30 V
Description: MOSFET P-CH 60V 5.7A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.3W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2163 pF @ 30 V
на замовлення 725000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 18.49 грн |
| 5000+ | 16.41 грн |
| 7500+ | 16.32 грн |
| 12500+ | 14.08 грн |
| DMTH4011SPD-13 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 40V 11.1A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 11.1A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| DMTH4011SPDQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 40V 11.1A PWRDI50
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.6W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 40V 11.1A PWRDI50
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.6W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 34.52 грн |
| DMTH43M8LPSQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 22A PWRDI5060
Qualification: AEC-Q101
Grade: Automotive
Power Dissipation (Max): 2.7W (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3367 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Description: MOSFET N-CH 40V 22A PWRDI5060
Qualification: AEC-Q101
Grade: Automotive
Power Dissipation (Max): 2.7W (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3367 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 22.73 грн |
| D15V0M1U2LP3-7 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 15VWM 24V X3DFN06032
Voltage - Reverse Standoff (Typ): 15V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 19pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 75W
Voltage - Clamping (Max) @ Ipp: 24V
Voltage - Breakdown (Min): 15.5V
Unidirectional Channels: 1
Supplier Device Package: X3-DFN0603-2
Description: TVS DIODE 15VWM 24V X3DFN06032
Voltage - Reverse Standoff (Typ): 15V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 19pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 75W
Voltage - Clamping (Max) @ Ipp: 24V
Voltage - Breakdown (Min): 15.5V
Unidirectional Channels: 1
Supplier Device Package: X3-DFN0603-2
на замовлення 263736 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 12.66 грн |
| 37+ | 8.38 грн |
| 103+ | 2.98 грн |
| 500+ | 2.62 грн |
| 1000+ | 2.45 грн |
| 2000+ | 2.42 грн |
| 5000+ | 2.35 грн |
| DBF2510-13 |
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Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 2.5A DBF
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2.5 A
Current - Average Rectified (Io): 2.5 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: DBF
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: BRIDGE RECT 1PHASE 1KV 2.5A DBF
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2.5 A
Current - Average Rectified (Io): 2.5 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: DBF
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 444 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 37.98 грн |
| 10+ | 31.46 грн |
| 100+ | 21.86 грн |
| DMC3025LSDQ-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 6.5A 8SO
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.4A, 10V, 45mOhm @ 5.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V, 590pF @ 25V
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SO
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 4.2A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N/P-CH 30V 6.5A 8SO
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.4A, 10V, 45mOhm @ 5.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V, 590pF @ 25V
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SO
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 4.2A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 480161 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 75.95 грн |
| 10+ | 45.79 грн |
| 100+ | 29.97 грн |
| 500+ | 21.74 грн |
| 1000+ | 19.69 грн |
| DMG4822SSDQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 10A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.42W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Description: MOSFET 2N-CH 30V 10A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.42W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
на замовлення 589853 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 63.29 грн |
| 10+ | 52.80 грн |
| 100+ | 36.52 грн |
| 500+ | 28.64 грн |
| 1000+ | 24.37 грн |
| DMP6050SPS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 60V 5.7A PWRDI5060-8
Input Capacitance (Ciss) (Max) @ Vds: 2163 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.3W
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 60V 5.7A PWRDI5060-8
Input Capacitance (Ciss) (Max) @ Vds: 2163 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.3W
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 725602 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 68.83 грн |
| 10+ | 45.10 грн |
| 100+ | 27.57 грн |
| 500+ | 20.47 грн |
| 1000+ | 18.60 грн |
| DMTH4011SPD-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 40V 11.1A PWRDI50
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.6W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET 2N-CH 40V 11.1A PWRDI50
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.6W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 925 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 94.94 грн |
| 10+ | 57.29 грн |
| 100+ | 37.88 грн |
| 500+ | 27.71 грн |
| DMTH4011SPDQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 40V 11.1A PWRDI50
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.6W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 40V 11.1A PWRDI50
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.6W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 3565 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 125.00 грн |
| 10+ | 76.64 грн |
| 100+ | 51.33 грн |
| 500+ | 38.01 грн |
| 1000+ | 34.74 грн |
| DMTH43M8LPSQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 22A PWRDI5060
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3367 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.7W (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 22A PWRDI5060
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3367 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.7W (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 87.82 грн |
| 10+ | 53.03 грн |
| 100+ | 34.91 грн |
| 500+ | 25.45 грн |
| 1000+ | 23.09 грн |
| PI4IOE5V96224ZLEX |
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Виробник: Diodes Incorporated
Description: IC XPNDR 1MHZ I2C SMBUS 32TQFN
Interrupt Output: Yes
Clock Frequency: 1 MHz
Voltage - Supply: 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Number of I/O: 24
Interface: I²C, SMBus
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 32-WFQFN Exposed Pad
Features: POR
Packaging: Cut Tape (CT)
Part Status: Active
Current - Output Source/Sink: 25mA
Supplier Device Package: 32-TQFN (3x6)
DigiKey Programmable: Not Verified
Description: IC XPNDR 1MHZ I2C SMBUS 32TQFN
Interrupt Output: Yes
Clock Frequency: 1 MHz
Voltage - Supply: 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Number of I/O: 24
Interface: I²C, SMBus
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 32-WFQFN Exposed Pad
Features: POR
Packaging: Cut Tape (CT)
Part Status: Active
Current - Output Source/Sink: 25mA
Supplier Device Package: 32-TQFN (3x6)
DigiKey Programmable: Not Verified
на замовлення 10157 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 165.35 грн |
| 10+ | 142.77 грн |
| 25+ | 134.67 грн |
| 100+ | 107.67 грн |
| 250+ | 101.10 грн |
| 500+ | 88.46 грн |
| 1000+ | 72.09 грн |
| PI3WVR13412ZHEX |
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Виробник: Diodes Incorporated
Description: DISPLAY SWITCH V-QFN3590-42
Packaging: Tape & Reel (TR)
Features: HDMI
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Applications: DisplayPort
-3db Bandwidth: 7GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
Description: DISPLAY SWITCH V-QFN3590-42
Packaging: Tape & Reel (TR)
Features: HDMI
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Applications: DisplayPort
-3db Bandwidth: 7GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3500+ | 54.47 грн |
| 7000+ | 51.38 грн |
| PI3WVR13612ZLEX |
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Виробник: Diodes Incorporated
Description: DISPLAY SWITCH W-QFN3590-52
Packaging: Tape & Reel (TR)
Features: HDMI
Package / Case: 52-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Applications: DisplayPort
-3db Bandwidth: 7GHz
Supplier Device Package: 52-TQFN (3.5x9)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
Description: DISPLAY SWITCH W-QFN3590-52
Packaging: Tape & Reel (TR)
Features: HDMI
Package / Case: 52-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Applications: DisplayPort
-3db Bandwidth: 7GHz
Supplier Device Package: 52-TQFN (3.5x9)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3500+ | 60.07 грн |
| 7000+ | 56.68 грн |
| 10500+ | 56.09 грн |
| PI3WVR13412ZHEX |
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Виробник: Diodes Incorporated
Description: DISPLAY SWITCH V-QFN3590-42
Packaging: Cut Tape (CT)
Features: HDMI
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Applications: DisplayPort
-3db Bandwidth: 7GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
Description: DISPLAY SWITCH V-QFN3590-42
Packaging: Cut Tape (CT)
Features: HDMI
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Applications: DisplayPort
-3db Bandwidth: 7GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
на замовлення 9349 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 109.97 грн |
| 10+ | 77.86 грн |
| 25+ | 70.76 грн |
| 100+ | 59.02 грн |
| 250+ | 55.50 грн |
| 500+ | 53.38 грн |
| 1000+ | 52.13 грн |
| PI3WVR13612ZLEX |
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Виробник: Diodes Incorporated
Description: DISPLAY SWITCH W-QFN3590-52
Packaging: Cut Tape (CT)
Features: HDMI
Package / Case: 52-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Applications: DisplayPort
-3db Bandwidth: 7GHz
Supplier Device Package: 52-TQFN (3.5x9)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
Description: DISPLAY SWITCH W-QFN3590-52
Packaging: Cut Tape (CT)
Features: HDMI
Package / Case: 52-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Applications: DisplayPort
-3db Bandwidth: 7GHz
Supplier Device Package: 52-TQFN (3.5x9)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
на замовлення 14918 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 121.05 грн |
| 10+ | 85.40 грн |
| 25+ | 77.65 грн |
| 100+ | 64.89 грн |
| 250+ | 61.08 грн |
| 500+ | 58.78 грн |
| 1000+ | 57.61 грн |
| ADTC114YUAQ-7 |
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Виробник: Diodes Incorporated
Description: TRANS PREBIAS NPN 0.1A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 0.1A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 1290 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 15.03 грн |
| 35+ | 8.76 грн |
| 100+ | 5.40 грн |
| 500+ | 3.71 грн |
| 1000+ | 3.26 грн |
| BCR421UFDQ-7 |
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Виробник: Diodes Incorporated
Description: IC LED DRVR LIN PWM 350MA 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 350mA
Internal Switch(s): No
Supplier Device Package: U-DFN2020-6
Dimming: PWM
Voltage - Supply (Max): 18V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: IC LED DRVR LIN PWM 350MA 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 350mA
Internal Switch(s): No
Supplier Device Package: U-DFN2020-6
Dimming: PWM
Voltage - Supply (Max): 18V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 365130 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 26.11 грн |
| 18+ | 17.45 грн |
| 25+ | 15.51 грн |
| 100+ | 12.57 грн |
| 250+ | 11.62 грн |
| 500+ | 11.05 грн |
| 1000+ | 10.41 грн |
| DMP1009UFDF-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 12V 15A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V
Description: MOSFET P-CH 12V 15A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V
на замовлення 2398 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 49.84 грн |
| 11+ | 29.56 грн |
| 100+ | 19.02 грн |
| 500+ | 13.59 грн |
| 1000+ | 12.22 грн |
| DMP3013SFV-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 12A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 11.5A, 10V
Power Dissipation (Max): 940mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1674 pF @ 15 V
Description: MOSFET P-CH 30V 12A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 11.5A, 10V
Power Dissipation (Max): 940mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1674 pF @ 15 V
на замовлення 7050 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 59.34 грн |
| 10+ | 35.35 грн |
| 100+ | 22.90 грн |
| 500+ | 16.47 грн |
| 1000+ | 14.85 грн |
| DMP34M4SPS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 135A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V
Description: MOSFET P-CH 30V 135A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V
на замовлення 1097545 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 103.64 грн |
| 10+ | 70.62 грн |
| 100+ | 47.70 грн |
| 500+ | 35.31 грн |
| 1000+ | 32.27 грн |
| DMP4065SQ-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 40V 2.4A SOT23 T&R
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 587 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 720mW (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.2A, 10V
Description: MOSFET P-CH 40V 2.4A SOT23 T&R
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 587 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 720mW (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.2A, 10V
на замовлення 5736 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 36.39 грн |
| 11+ | 29.94 грн |
| 100+ | 20.77 грн |
| 500+ | 15.22 грн |
| 1000+ | 12.37 грн |
| DPD13AWF-7 |
Виробник: Diodes Incorporated
Description: TVS DIODES 13VWM 21.5VC SOD123F
Description: TVS DIODES 13VWM 21.5VC SOD123F
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| HDS10M-13 |
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Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 1A HDS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: HDS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 1A HDS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: HDS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 516116 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 35.60 грн |
| 15+ | 21.10 грн |
| 100+ | 13.37 грн |
| 500+ | 9.41 грн |
| 1000+ | 8.39 грн |
| PI3DPX1202A2ZBEX |
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Виробник: Diodes Incorporated
Description: DISPLAY SWITCH V-QFN7070-48 T&R
Description: DISPLAY SWITCH V-QFN7070-48 T&R
на замовлення 5 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 157.44 грн |
| PI3PCIE3412AZHEX |
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Виробник: Diodes Incorporated
Description: PCI SWITCH 2:1 4 CHAN 42TQFN
Packaging: Cut Tape (CT)
Features: Bi-Directional, SATA, USB 3.0
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Applications: PCI Express®
On-State Resistance (Max): 5Ohm (Typ)
-3db Bandwidth: 8.2GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
Description: PCI SWITCH 2:1 4 CHAN 42TQFN
Packaging: Cut Tape (CT)
Features: Bi-Directional, SATA, USB 3.0
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Applications: PCI Express®
On-State Resistance (Max): 5Ohm (Typ)
-3db Bandwidth: 8.2GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
на замовлення 14473 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 136.87 грн |
| 10+ | 97.29 грн |
| 25+ | 88.65 грн |
| 100+ | 74.24 грн |
| 250+ | 69.97 грн |
| 500+ | 67.48 грн |
| PI3PCIE3412AZLEX |
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Виробник: Diodes Incorporated
Description: PCIE SWITCH W-QFN3060-40 T&R 3.5
Multiplexer/Demultiplexer Circuit: 2:1
Voltage - Supply, Single (V+): 3V ~ 3.6V
Supplier Device Package: 40-TQFN (3x6)
-3db Bandwidth: 8.2GHz
On-State Resistance (Max): 5Ohm (Typ)
Applications: PCI Express®
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 40-WFQFN Exposed Pad
Features: Bi-Directional, SATA, USB 3.0
Packaging: Cut Tape (CT)
Number of Channels: 4
Description: PCIE SWITCH W-QFN3060-40 T&R 3.5
Multiplexer/Demultiplexer Circuit: 2:1
Voltage - Supply, Single (V+): 3V ~ 3.6V
Supplier Device Package: 40-TQFN (3x6)
-3db Bandwidth: 8.2GHz
On-State Resistance (Max): 5Ohm (Typ)
Applications: PCI Express®
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 40-WFQFN Exposed Pad
Features: Bi-Directional, SATA, USB 3.0
Packaging: Cut Tape (CT)
Number of Channels: 4
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 250.80 грн |
| PI4IOE5V6408ZTAEX |
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Виробник: Diodes Incorporated
Description: IC XPNDR 1MHZ I2C 16UQFN
Packaging: Cut Tape (CT)
Package / Case: 16-UFQFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Clock Frequency: 1 MHz
Interrupt Output: Yes
Supplier Device Package: 16-UQFN (1.8x2.6)
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC XPNDR 1MHZ I2C 16UQFN
Packaging: Cut Tape (CT)
Package / Case: 16-UFQFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Clock Frequency: 1 MHz
Interrupt Output: Yes
Supplier Device Package: 16-UQFN (1.8x2.6)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 760037 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 51.43 грн |
| 10+ | 35.35 грн |
| 25+ | 31.78 грн |
| 100+ | 26.15 грн |
| 250+ | 24.39 грн |
| 500+ | 23.33 грн |
| 1000+ | 22.09 грн |
| PI4IOE5V9535ZDEX |
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Виробник: Diodes Incorporated
Description: IC XPNDR 400KHZ I2C 24TQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 16
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Clock Frequency: 400 kHz
Interrupt Output: Yes
Supplier Device Package: 24-TQFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC XPNDR 400KHZ I2C 24TQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 16
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Clock Frequency: 400 kHz
Interrupt Output: Yes
Supplier Device Package: 24-TQFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 29177 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 100.48 грн |
| 10+ | 70.40 грн |
| 25+ | 63.87 грн |
| 100+ | 53.19 грн |
| 250+ | 49.98 грн |
| 500+ | 48.95 грн |
| PI6CG15401ZHIEX |
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Виробник: Diodes Incorporated
Description: IC CLOCK GENERATOR 32TQFN
Description: IC CLOCK GENERATOR 32TQFN
товару немає в наявності
В кошику
од. на суму грн.

































