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AP7380-50Y-13 AP7380-50Y-13 DIODES INCORPORATED AP7380.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.5V
Output voltage: 5V
Output current: 0.15A
Case: SOT89
Mounting: SMD
Manufacturer series: AP7380
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.5...24V
на замовлення 2495 шт:
термін постачання 21-30 дні (днів)
18+24.73 грн
22+18.84 грн
24+16.55 грн
29+14.09 грн
100+11.56 грн
103+9.03 грн
284+8.55 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
AP7380-33WR-7 AP7380-33WR-7 DIODES INCORPORATED AP7380.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.5V
Output voltage: 3.3V
Output current: 0.15A
Case: SOT25
Mounting: SMD
Manufacturer series: AP7380
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.5...24V
Integrated circuit features: shutdown mode control input
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
18+24.73 грн
21+19.16 грн
24+16.94 грн
28+14.57 грн
100+11.88 грн
104+8.95 грн
284+8.47 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
AP7380-50WR-7 AP7380-50WR-7 DIODES INCORPORATED AP7380.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.5V
Output voltage: 5V
Output current: 0.15A
Case: SOT25
Mounting: SMD
Manufacturer series: AP7380
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.5...24V
Integrated circuit features: shutdown mode control input
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AP7380-30W5-7 AP7380-30W5-7 DIODES INCORPORATED AP7380.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.15A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.5V
Output voltage: 3V
Output current: 0.15A
Case: SOT25
Mounting: SMD
Manufacturer series: AP7380
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.5...24V
Integrated circuit features: shutdown mode control input
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AP7380-30WR-7 DIODES INCORPORATED AP7380.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.15A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.5V
Output voltage: 3V
Output current: 0.15A
Case: SOT25
Mounting: SMD
Manufacturer series: AP7380
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.5...24V
Integrated circuit features: shutdown mode control input
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AP7380-30Y-13 AP7380-30Y-13 DIODES INCORPORATED AP7380.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.15A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.5V
Output voltage: 3V
Output current: 0.15A
Case: SOT89
Mounting: SMD
Manufacturer series: AP7380
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.5...24V
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AP7380-33Y-13 AP7380-33Y-13 DIODES INCORPORATED AP7380.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.5V
Output voltage: 3.3V
Output current: 0.15A
Case: SOT89
Mounting: SMD
Manufacturer series: AP7380
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.5...24V
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AP7380-36WR-7 DIODES INCORPORATED AP7380.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.6V; 0.15A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.5V
Output voltage: 3.6V
Output current: 0.15A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.5...24V
Integrated circuit features: shutdown mode control input
Manufacturer series: AP7380
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AP7380-36Y-13 AP7380-36Y-13 DIODES INCORPORATED AP7380.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.6V; 0.15A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.5V
Output voltage: 3.6V
Output current: 0.15A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.5...24V
Integrated circuit features: shutdown mode control input
Manufacturer series: AP7380
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PD3S130H-7 PD3S130H-7 DIODES INCORPORATED ds30694.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®323; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Leakage current: 0.1mA
Max. forward impulse current: 22A
Kind of package: reel; tape
Capacitance: 40pF
на замовлення 1139 шт:
термін постачання 21-30 дні (днів)
13+34.10 грн
16+25.26 грн
80+11.64 грн
219+11.00 грн
Мінімальне замовлення: 13
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PDR5G-13 DIODES INCORPORATED ds30552.pdf Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
5000+20.55 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
DMN2300UFB4-7B DMN2300UFB4-7B DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED8FED47B058A18&compId=DMN2300UFB4.pdf?ci_sign=43a9e5fc501fb4b4dadbce7a5a750442f9375a97 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.96A; 0.5W; X1-DFN1006-3; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.96A
Power dissipation: 0.5W
Case: X1-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
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DMN2300UFB-7B DIODES INCORPORATED DMN2300UFB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 940mA; Idm: 8A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.94A
Pulsed drain current: 8A
Power dissipation: 1.2W
Case: X1-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 0.89nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN2300UFD-7 DIODES INCORPORATED DMN2300UFD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.34A; Idm: 6A; 470mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.34A
Pulsed drain current: 6A
Power dissipation: 0.47W
Case: X1-DFN1212-3
Gate-source voltage: ±8V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN2300UFL4-7 DIODES INCORPORATED DMN2300UFL4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.19A; Idm: 6A; 1.39W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.19A
Pulsed drain current: 6A
Power dissipation: 1.39W
Case: X2-DFN1310-6
Gate-source voltage: ±8V
On-state resistance: 0.52Ω
Mounting: SMD
Gate charge: 3.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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BAT54TW-7-F BAT54TW-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE797AD0942A1134748&compId=bat54.pdf?ci_sign=b4bdda40debb65b9571b132c1c4a1a56e8f845d0 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT363; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT363
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: triple independent
Capacitance: 10pF
Max. forward voltage: 0.24V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
18+24.73 грн
23+17.73 грн
50+12.75 грн
100+10.93 грн
199+4.67 грн
547+4.43 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
BAT54BRW-7-F BAT54BRW-7-F DIODES INCORPORATED BAT54TW_ADW_CDW_SDW_BRW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT363; SMD; 30V; 0.3A; reel,tape
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Load current: 0.3A
Max. forward impulse current: 0.6A
Max. forward voltage: 1V
Max. off-state voltage: 30V
Semiconductor structure: double series x2
Type of diode: Schottky rectifying
на замовлення 1467 шт:
термін постачання 21-30 дні (днів)
14+32.40 грн
18+22.25 грн
72+12.98 грн
198+12.27 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
SBR10A45SP5-13 DIODES INCORPORATED SBR10A45SP5.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SBR®; SMD; 45V; 10A
Mounting: SMD
Case: PowerDI®5
Type of diode: Schottky rectifying
Technology: SBR®
Leakage current: 0.4mA
Max. forward voltage: 0.53V
Load current: 10A
Max. off-state voltage: 45V
Max. forward impulse current: 180A
Kind of package: reel; tape
Semiconductor structure: single diode
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SDT10A45P5-13 DIODES INCORPORATED SDT10A45P5.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 45V; 10A; reel,tape
Case: PowerDI®5
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Leakage current: 80mA
Max. forward voltage: 0.47V
Max. off-state voltage: 45V
Load current: 10A
Max. forward impulse current: 180A
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SDT10A45P5-13D DIODES INCORPORATED SDT10A45P5.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 45V; 10A; reel,tape
Case: PowerDI®5
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Leakage current: 80mA
Max. forward voltage: 0.47V
Max. off-state voltage: 45V
Load current: 10A
Max. forward impulse current: 180A
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DSS60601MZ4-13 DSS60601MZ4-13 DIODES INCORPORATED DSS60601MZ4.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 1.2W; SOT223
Polarisation: bipolar
Mounting: SMD
Type of transistor: NPN
Case: SOT223
Kind of package: reel; tape
Power dissipation: 1.2W
Collector current: 6A
Pulsed collector current: 12A
Current gain: 50...360
Collector-emitter voltage: 60V
Quantity in set/package: 2500pcs.
Frequency: 100MHz
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DSS60600MZ4Q-13 DIODES INCORPORATED DSS60600MZ4Q.pdf Category: Transistors - Unclassified
Description: DSS60600MZ4Q-13
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
2500+17.31 грн
Мінімальне замовлення: 2500
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AL3069S16-13 DIODES INCORPORATED AL3069.pdf Category: LED drivers
Description: IC: driver; boost; LED driver; SO16; Ch: 4; 4.5÷60VDC
Topology: boost
Type of integrated circuit: driver
Case: SO16
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...105°C
Number of channels: 4
Operating voltage: 4.5...60V DC
Kind of integrated circuit: LED driver
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DMN6022SSD-13 DMN6022SSD-13 DIODES INCORPORATED DMN6022SSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5A; Idm: 45A; 1.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 32nC
On-state resistance: 34mΩ
Power dissipation: 1.5W
Drain current: 5A
Gate-source voltage: ±20V
Pulsed drain current: 45A
Drain-source voltage: 60V
Kind of package: 13 inch reel; tape
Case: SO8
Kind of channel: enhancement
Mounting: SMD
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MMBTA14-7-F MMBTA14-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BA8118E762874469&compId=MMBTA13-7-F.pdf?ci_sign=ad82d8cd6c8fd0f4161ab2135bda9cc6ef274b80 Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Quantity in set/package: 3000pcs.
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SM05-7 SM05-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA91A4DC4938BF&compId=SM05.pdf?ci_sign=0696b7ebd801f9929b9ff512b51e875927656d8c Category: Protection diodes - arrays
Description: Diode: TVS array; 6.2÷7.3V; 17A; 300W; double,common anode; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Type of diode: TVS array
Leakage current: 10µA
Max. off-state voltage: 5V
Breakdown voltage: 6.2...7.3V
Max. forward impulse current: 17A
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode; double
на замовлення 1674 шт:
термін постачання 21-30 дні (днів)
42+10.23 грн
50+8.08 грн
55+7.28 грн
100+5.37 грн
238+3.92 грн
653+3.71 грн
Мінімальне замовлення: 42
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PAM8302AAYCR DIODES INCORPORATED PAM8302A.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 2.5W; low noise,thermal protection
Type of integrated circuit: audio amplifier
Mounting: SMD
Case: U-DFN3030-8
Operating temperature: -40...85°C
Voltage supply range: 2...5.5V DC
Integrated circuit features: low noise; thermal protection
Kind of package: reel; tape
Number of channels: 1
Output power: 2.5W
Amplifier class: D
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AZ23C2V7-7-F AZ23C2V7-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B7A017D94BAE6143&compId=AZ23C_ser.pdf?ci_sign=f8289f634af17fc3dccb307520c64a27b76de4d8 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.7V; SMD; reel,tape; SOT23
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.7V
Tolerance: ±5%
Semiconductor structure: common anode; double
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DZ23C2V7-7-F DIODES INCORPORATED DZ23C2V7-DZ23C51.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.7V; SMD; reel,tape; SOT23
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.7V
Semiconductor structure: common cathode; double
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SMAJ26AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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FZT968TA DIODES INCORPORATED FZT968.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 6A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 6A
Power dissipation: 3W
Case: SOT223
Pulsed collector current: 20A
Current gain: 50...1000
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 80MHz
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DGD0211CWT-7 DIODES INCORPORATED DGD0211C.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; TSOT25; -1.8÷1.9A; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: TSOT25
Output current: -1.8...1.9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 25ns
Kind of package: reel; tape
Supply voltage: 4.5...18V
Kind of output: inverting; non-inverting
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DGD0211CWTQ-7 DIODES INCORPORATED DGD0211CWTQ.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; TSOT25; -1.8÷1.9A; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: TSOT25
Output current: -1.8...1.9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 25ns
Kind of package: reel; tape
Supply voltage: 4.5...18V
Kind of output: inverting; non-inverting
Application: automotive industry
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RS2B-13-F DIODES INCORPORATED ds15004.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1.5A; 150ns; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1.5A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Reverse recovery time: 150ns
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RS2BA-13-F DIODES INCORPORATED ds15004.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1.5A; 150ns; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1.5A
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Reverse recovery time: 150ns
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DGD0215WT-7 DIODES INCORPORATED DGD0215-0216.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; TSOT25; -1.8÷1.9A; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: TSOT25
Output current: -1.8...1.9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 25ns
Kind of package: reel; tape
Supply voltage: 4.5...18V
Kind of output: inverting
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DGD0216WT-7 DIODES INCORPORATED DGD0215-0216.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; TSOT25; -1.8÷1.9A; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: TSOT25
Output current: -1.8...1.9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 25ns
Kind of package: reel; tape
Supply voltage: 4.5...18V
Kind of output: non-inverting
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DGD0227S8-13 DIODES INCORPORATED DGD0227.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; SO8; -4÷4A; Ch: 1; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 40ns
Pulse fall time: 40ns
Kind of package: reel; tape
Supply voltage: 4.5...18V
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DGD0280WT-7 DIODES INCORPORATED DGD0280.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; TSOT25; Ch: 1
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: TSOT25
Output current: -2.8...2.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 35ns
Pulse fall time: 35ns
Kind of package: reel; tape
Supply voltage: 4.5...18V
Kind of output: non-inverting
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DGD0280WTQ-7 DIODES INCORPORATED DGD0280WTQ.pdf Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
3000+45.02 грн
Мінімальне замовлення: 3000
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DGD0590AFU-7 DIODES INCORPORATED DGD0590A.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: VQFN8
Output current: -3...1A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 27ns
Pulse fall time: 29ns
Kind of package: reel; tape
Supply voltage: 4.5...5.5V
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DGD0506AM10-13 DIODES INCORPORATED DGD0506A.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; MSOP10
Case: MSOP10
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 8...14V
Output current: -2...1.5A
Pulse fall time: 25ns
Impulse rise time: 35ns
Number of channels: 1
Topology: MOSFET half-bridge
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DGD0506AFN-7 DIODES INCORPORATED DGD0506A.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; -2÷1.5A
Case: WDFN3030-10
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 8...14V
Output current: -2...1.5A
Pulse fall time: 25ns
Impulse rise time: 35ns
Number of channels: 1
Topology: MOSFET half-bridge
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DGD0503FN-7 DIODES INCORPORATED DGD0503.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Output current: -600...290mA
Pulse fall time: 90ns
Impulse rise time: 170ns
Number of channels: 1
Supply voltage: 10...20V
Case: WDFN3030-10
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DGD05473FN-7 DIODES INCORPORATED DGD05473.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1
Kind of package: reel; tape
Case: VDFN10
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Mounting: SMD
Operating temperature: -40...125°C
Output current: -2.5...1.5A
Pulse fall time: 25ns
Impulse rise time: 30ns
Number of channels: 1
Supply voltage: 4.2...14V
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DGD0504FN-7 DIODES INCORPORATED DGD0504.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver
Case: WDFN3030-10
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
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DGD0507AFN-7 DIODES INCORPORATED DGD0507A.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; -2÷1.5A
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side
Case: WDFN3030-10
Output current: -2...1.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 25ns
Kind of package: reel; tape
Supply voltage: 8...14V
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DGD05463FN-7 DIODES INCORPORATED DGD05463.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; -2.5÷1.5A
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side
Case: WDFN3030-10
Output current: -2.5...1.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 35ns
Pulse fall time: 25ns
Kind of package: reel; tape
Supply voltage: 4.2...14V
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DGD05473FNQ-7 DIODES INCORPORATED DGD05473FNQ.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1
Kind of package: reel; tape
Case: U-DFN3030-10
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Mounting: SMD
Operating temperature: -40...125°C
Output current: -2.5...1.5A
Pulse fall time: 25ns
Impulse rise time: 30ns
Number of channels: 1
Supply voltage: 4.4...14V
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DGD05463M10-13 DIODES INCORPORATED DGD05463.pdf Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
2500+25.75 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMN3055LFDB-13 DIODES INCORPORATED DMN3055LFDB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 25A; 870mW
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: U-DFN2020-6
Gate charge: 11.2nC
On-state resistance: 75mΩ
Power dissipation: 0.87W
Drain current: 4A
Gate-source voltage: ±12V
Pulsed drain current: 25A
Drain-source voltage: 30V
Kind of package: 13 inch reel; tape
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DMN3055LFDBQ-7 DIODES INCORPORATED DMN3055LFDBQ.pdf Category: Unclassified
Description: DMN3055LFDBQ-7
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
3000+10.74 грн
Мінімальне замовлення: 3000
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74LVC04AT14-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70EC7F85B00D3&compId=74LVC04A.pdf?ci_sign=5112c4f09ba3beb60ea48cb08c9348156d912f18 Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: LVC
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
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74LVC04AS14-13 DIODES INCORPORATED 74LVC04A.pdf Category: Integrated circuits - Unclassified
Description: 74LVC04AS14-13
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
2500+6.22 грн
Мінімальне замовлення: 2500
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SMCJ36CA-13-F SMCJ36CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMCJ36A-13-F SMCJ36A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMCJ36AQ-13-F DIODES INCORPORATED SMCJ5.0CAQ_SMCJ110CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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SMCJ36CAQ-13-F DIODES INCORPORATED SMCJ5.0CAQ_SMCJ110CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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DMP2110U-7 DMP2110U-7 DIODES INCORPORATED DMP2110U.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -15A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.8A
Pulsed drain current: -15A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP2110UVT-13 DMP2110UVT-13 DIODES INCORPORATED DMP2110UVT.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.4A; Idm: -15A; 740mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.4A
Pulsed drain current: -15A
Power dissipation: 0.74W
Case: TSOT26
Gate-source voltage: ±10V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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AP7380-50Y-13 AP7380.pdf
AP7380-50Y-13
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.5V
Output voltage: 5V
Output current: 0.15A
Case: SOT89
Mounting: SMD
Manufacturer series: AP7380
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.5...24V
на замовлення 2495 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
18+24.73 грн
22+18.84 грн
24+16.55 грн
29+14.09 грн
100+11.56 грн
103+9.03 грн
284+8.55 грн
Мінімальне замовлення: 18
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AP7380-33WR-7 AP7380.pdf
AP7380-33WR-7
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.5V
Output voltage: 3.3V
Output current: 0.15A
Case: SOT25
Mounting: SMD
Manufacturer series: AP7380
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.5...24V
Integrated circuit features: shutdown mode control input
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
18+24.73 грн
21+19.16 грн
24+16.94 грн
28+14.57 грн
100+11.88 грн
104+8.95 грн
284+8.47 грн
Мінімальне замовлення: 18
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AP7380-50WR-7 AP7380.pdf
AP7380-50WR-7
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.5V
Output voltage: 5V
Output current: 0.15A
Case: SOT25
Mounting: SMD
Manufacturer series: AP7380
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.5...24V
Integrated circuit features: shutdown mode control input
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AP7380-30W5-7 AP7380.pdf
AP7380-30W5-7
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.15A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.5V
Output voltage: 3V
Output current: 0.15A
Case: SOT25
Mounting: SMD
Manufacturer series: AP7380
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.5...24V
Integrated circuit features: shutdown mode control input
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AP7380-30WR-7 AP7380.pdf
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.15A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.5V
Output voltage: 3V
Output current: 0.15A
Case: SOT25
Mounting: SMD
Manufacturer series: AP7380
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.5...24V
Integrated circuit features: shutdown mode control input
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AP7380-30Y-13 AP7380.pdf
AP7380-30Y-13
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.15A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.5V
Output voltage: 3V
Output current: 0.15A
Case: SOT89
Mounting: SMD
Manufacturer series: AP7380
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.5...24V
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AP7380-33Y-13 AP7380.pdf
AP7380-33Y-13
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.5V
Output voltage: 3.3V
Output current: 0.15A
Case: SOT89
Mounting: SMD
Manufacturer series: AP7380
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.5...24V
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AP7380-36WR-7 AP7380.pdf
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.6V; 0.15A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.5V
Output voltage: 3.6V
Output current: 0.15A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.5...24V
Integrated circuit features: shutdown mode control input
Manufacturer series: AP7380
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AP7380-36Y-13 AP7380.pdf
AP7380-36Y-13
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.6V; 0.15A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.5V
Output voltage: 3.6V
Output current: 0.15A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.5...24V
Integrated circuit features: shutdown mode control input
Manufacturer series: AP7380
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PD3S130H-7 ds30694.pdf
PD3S130H-7
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®323; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Leakage current: 0.1mA
Max. forward impulse current: 22A
Kind of package: reel; tape
Capacitance: 40pF
на замовлення 1139 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+34.10 грн
16+25.26 грн
80+11.64 грн
219+11.00 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
PDR5G-13 ds30552.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5000+20.55 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
DMN2300UFB4-7B pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED8FED47B058A18&compId=DMN2300UFB4.pdf?ci_sign=43a9e5fc501fb4b4dadbce7a5a750442f9375a97
DMN2300UFB4-7B
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.96A; 0.5W; X1-DFN1006-3; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.96A
Power dissipation: 0.5W
Case: X1-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
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DMN2300UFB-7B DMN2300UFB.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 940mA; Idm: 8A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.94A
Pulsed drain current: 8A
Power dissipation: 1.2W
Case: X1-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 0.89nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN2300UFD-7 DMN2300UFD.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.34A; Idm: 6A; 470mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.34A
Pulsed drain current: 6A
Power dissipation: 0.47W
Case: X1-DFN1212-3
Gate-source voltage: ±8V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN2300UFL4-7 DMN2300UFL4.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.19A; Idm: 6A; 1.39W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.19A
Pulsed drain current: 6A
Power dissipation: 1.39W
Case: X2-DFN1310-6
Gate-source voltage: ±8V
On-state resistance: 0.52Ω
Mounting: SMD
Gate charge: 3.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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BAT54TW-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1EE797AD0942A1134748&compId=bat54.pdf?ci_sign=b4bdda40debb65b9571b132c1c4a1a56e8f845d0
BAT54TW-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT363; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT363
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: triple independent
Capacitance: 10pF
Max. forward voltage: 0.24V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
18+24.73 грн
23+17.73 грн
50+12.75 грн
100+10.93 грн
199+4.67 грн
547+4.43 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
BAT54BRW-7-F BAT54TW_ADW_CDW_SDW_BRW.pdf
BAT54BRW-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT363; SMD; 30V; 0.3A; reel,tape
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Load current: 0.3A
Max. forward impulse current: 0.6A
Max. forward voltage: 1V
Max. off-state voltage: 30V
Semiconductor structure: double series x2
Type of diode: Schottky rectifying
на замовлення 1467 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
14+32.40 грн
18+22.25 грн
72+12.98 грн
198+12.27 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
SBR10A45SP5-13 SBR10A45SP5.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SBR®; SMD; 45V; 10A
Mounting: SMD
Case: PowerDI®5
Type of diode: Schottky rectifying
Technology: SBR®
Leakage current: 0.4mA
Max. forward voltage: 0.53V
Load current: 10A
Max. off-state voltage: 45V
Max. forward impulse current: 180A
Kind of package: reel; tape
Semiconductor structure: single diode
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SDT10A45P5-13 SDT10A45P5.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 45V; 10A; reel,tape
Case: PowerDI®5
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Leakage current: 80mA
Max. forward voltage: 0.47V
Max. off-state voltage: 45V
Load current: 10A
Max. forward impulse current: 180A
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SDT10A45P5-13D SDT10A45P5.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 45V; 10A; reel,tape
Case: PowerDI®5
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Leakage current: 80mA
Max. forward voltage: 0.47V
Max. off-state voltage: 45V
Load current: 10A
Max. forward impulse current: 180A
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DSS60601MZ4-13 DSS60601MZ4.pdf
DSS60601MZ4-13
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 1.2W; SOT223
Polarisation: bipolar
Mounting: SMD
Type of transistor: NPN
Case: SOT223
Kind of package: reel; tape
Power dissipation: 1.2W
Collector current: 6A
Pulsed collector current: 12A
Current gain: 50...360
Collector-emitter voltage: 60V
Quantity in set/package: 2500pcs.
Frequency: 100MHz
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DSS60600MZ4Q-13 DSS60600MZ4Q.pdf
Виробник: DIODES INCORPORATED
Category: Transistors - Unclassified
Description: DSS60600MZ4Q-13
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+17.31 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
AL3069S16-13 AL3069.pdf
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; boost; LED driver; SO16; Ch: 4; 4.5÷60VDC
Topology: boost
Type of integrated circuit: driver
Case: SO16
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...105°C
Number of channels: 4
Operating voltage: 4.5...60V DC
Kind of integrated circuit: LED driver
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DMN6022SSD-13 DMN6022SSD.pdf
DMN6022SSD-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5A; Idm: 45A; 1.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 32nC
On-state resistance: 34mΩ
Power dissipation: 1.5W
Drain current: 5A
Gate-source voltage: ±20V
Pulsed drain current: 45A
Drain-source voltage: 60V
Kind of package: 13 inch reel; tape
Case: SO8
Kind of channel: enhancement
Mounting: SMD
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MMBTA14-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BA8118E762874469&compId=MMBTA13-7-F.pdf?ci_sign=ad82d8cd6c8fd0f4161ab2135bda9cc6ef274b80
MMBTA14-7-F
Виробник: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Quantity in set/package: 3000pcs.
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SM05-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA91A4DC4938BF&compId=SM05.pdf?ci_sign=0696b7ebd801f9929b9ff512b51e875927656d8c
SM05-7
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.2÷7.3V; 17A; 300W; double,common anode; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Type of diode: TVS array
Leakage current: 10µA
Max. off-state voltage: 5V
Breakdown voltage: 6.2...7.3V
Max. forward impulse current: 17A
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode; double
на замовлення 1674 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
42+10.23 грн
50+8.08 грн
55+7.28 грн
100+5.37 грн
238+3.92 грн
653+3.71 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
PAM8302AAYCR PAM8302A.pdf
Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 2.5W; low noise,thermal protection
Type of integrated circuit: audio amplifier
Mounting: SMD
Case: U-DFN3030-8
Operating temperature: -40...85°C
Voltage supply range: 2...5.5V DC
Integrated circuit features: low noise; thermal protection
Kind of package: reel; tape
Number of channels: 1
Output power: 2.5W
Amplifier class: D
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AZ23C2V7-7-F pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B7A017D94BAE6143&compId=AZ23C_ser.pdf?ci_sign=f8289f634af17fc3dccb307520c64a27b76de4d8
AZ23C2V7-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.7V; SMD; reel,tape; SOT23
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.7V
Tolerance: ±5%
Semiconductor structure: common anode; double
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DZ23C2V7-7-F DZ23C2V7-DZ23C51.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.7V; SMD; reel,tape; SOT23
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.7V
Semiconductor structure: common cathode; double
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SMAJ26AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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FZT968TA FZT968.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 6A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 6A
Power dissipation: 3W
Case: SOT223
Pulsed collector current: 20A
Current gain: 50...1000
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 80MHz
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DGD0211CWT-7 DGD0211C.pdf
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; TSOT25; -1.8÷1.9A; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: TSOT25
Output current: -1.8...1.9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 25ns
Kind of package: reel; tape
Supply voltage: 4.5...18V
Kind of output: inverting; non-inverting
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DGD0211CWTQ-7 DGD0211CWTQ.pdf
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; TSOT25; -1.8÷1.9A; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: TSOT25
Output current: -1.8...1.9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 25ns
Kind of package: reel; tape
Supply voltage: 4.5...18V
Kind of output: inverting; non-inverting
Application: automotive industry
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RS2B-13-F ds15004.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1.5A; 150ns; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1.5A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Reverse recovery time: 150ns
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RS2BA-13-F ds15004.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1.5A; 150ns; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1.5A
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Reverse recovery time: 150ns
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DGD0215WT-7 DGD0215-0216.pdf
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; TSOT25; -1.8÷1.9A; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: TSOT25
Output current: -1.8...1.9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 25ns
Kind of package: reel; tape
Supply voltage: 4.5...18V
Kind of output: inverting
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DGD0216WT-7 DGD0215-0216.pdf
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; TSOT25; -1.8÷1.9A; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: TSOT25
Output current: -1.8...1.9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 25ns
Kind of package: reel; tape
Supply voltage: 4.5...18V
Kind of output: non-inverting
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DGD0227S8-13 DGD0227.pdf
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; SO8; -4÷4A; Ch: 1; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 40ns
Pulse fall time: 40ns
Kind of package: reel; tape
Supply voltage: 4.5...18V
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DGD0280WT-7 DGD0280.pdf
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; TSOT25; Ch: 1
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: TSOT25
Output current: -2.8...2.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 35ns
Pulse fall time: 35ns
Kind of package: reel; tape
Supply voltage: 4.5...18V
Kind of output: non-inverting
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DGD0280WTQ-7 DGD0280WTQ.pdf
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+45.02 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DGD0590AFU-7 DGD0590A.pdf
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: VQFN8
Output current: -3...1A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 27ns
Pulse fall time: 29ns
Kind of package: reel; tape
Supply voltage: 4.5...5.5V
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DGD0506AM10-13 DGD0506A.pdf
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; MSOP10
Case: MSOP10
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 8...14V
Output current: -2...1.5A
Pulse fall time: 25ns
Impulse rise time: 35ns
Number of channels: 1
Topology: MOSFET half-bridge
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DGD0506AFN-7 DGD0506A.pdf
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; -2÷1.5A
Case: WDFN3030-10
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 8...14V
Output current: -2...1.5A
Pulse fall time: 25ns
Impulse rise time: 35ns
Number of channels: 1
Topology: MOSFET half-bridge
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DGD0503FN-7 DGD0503.pdf
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Output current: -600...290mA
Pulse fall time: 90ns
Impulse rise time: 170ns
Number of channels: 1
Supply voltage: 10...20V
Case: WDFN3030-10
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DGD05473FN-7 DGD05473.pdf
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1
Kind of package: reel; tape
Case: VDFN10
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Mounting: SMD
Operating temperature: -40...125°C
Output current: -2.5...1.5A
Pulse fall time: 25ns
Impulse rise time: 30ns
Number of channels: 1
Supply voltage: 4.2...14V
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DGD0504FN-7 DGD0504.pdf
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver
Case: WDFN3030-10
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
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DGD0507AFN-7 DGD0507A.pdf
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; -2÷1.5A
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side
Case: WDFN3030-10
Output current: -2...1.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 30ns
Pulse fall time: 25ns
Kind of package: reel; tape
Supply voltage: 8...14V
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DGD05463FN-7 DGD05463.pdf
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; -2.5÷1.5A
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side
Case: WDFN3030-10
Output current: -2.5...1.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 35ns
Pulse fall time: 25ns
Kind of package: reel; tape
Supply voltage: 4.2...14V
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DGD05473FNQ-7 DGD05473FNQ.pdf
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1
Kind of package: reel; tape
Case: U-DFN3030-10
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Mounting: SMD
Operating temperature: -40...125°C
Output current: -2.5...1.5A
Pulse fall time: 25ns
Impulse rise time: 30ns
Number of channels: 1
Supply voltage: 4.4...14V
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DGD05463M10-13 DGD05463.pdf
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+25.75 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMN3055LFDB-13 DMN3055LFDB.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 25A; 870mW
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: U-DFN2020-6
Gate charge: 11.2nC
On-state resistance: 75mΩ
Power dissipation: 0.87W
Drain current: 4A
Gate-source voltage: ±12V
Pulsed drain current: 25A
Drain-source voltage: 30V
Kind of package: 13 inch reel; tape
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DMN3055LFDBQ-7 DMN3055LFDBQ.pdf
Виробник: DIODES INCORPORATED
Category: Unclassified
Description: DMN3055LFDBQ-7
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+10.74 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
74LVC04AT14-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70EC7F85B00D3&compId=74LVC04A.pdf?ci_sign=5112c4f09ba3beb60ea48cb08c9348156d912f18
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: LVC
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
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74LVC04AS14-13 74LVC04A.pdf
Виробник: DIODES INCORPORATED
Category: Integrated circuits - Unclassified
Description: 74LVC04AS14-13
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+6.22 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SMCJ36CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ36CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMCJ36A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ36A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMCJ36AQ-13-F SMCJ5.0CAQ_SMCJ110CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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SMCJ36CAQ-13-F SMCJ5.0CAQ_SMCJ110CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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DMP2110U-7 DMP2110U.pdf
DMP2110U-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -15A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.8A
Pulsed drain current: -15A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP2110UVT-13 DMP2110UVT.pdf
DMP2110UVT-13
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.4A; Idm: -15A; 740mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.4A
Pulsed drain current: -15A
Power dissipation: 0.74W
Case: TSOT26
Gate-source voltage: ±10V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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