Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74087) > Сторінка 1220 з 1235
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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| SMF4L30A-7 | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; DO219AA Mounting: SMD Max. forward impulse current: 8.3A Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30V Kind of package: reel; tape Semiconductor structure: unidirectional Leakage current: 0.5µA Case: DO219AA Type of diode: TVS Breakdown voltage: 33.3...36.8V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
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ZXMN4A06GTA | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 5.6A; 2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 5.6A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 131 шт: термін постачання 14-30 дні (днів) |
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SMAJ20A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; unidirectional; SMA Type of diode: TVS Max. off-state voltage: 20V Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Peak pulse power dissipation: 0.4kW Features of semiconductor devices: glass passivated Leakage current: 5µA Breakdown voltage: 22.2...24.5V Max. forward impulse current: 12.3A |
на замовлення 192 шт: термін постачання 14-30 дні (днів) |
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SMCJ36CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 25.8A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| SMCJ15AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 16.7÷18.5V; 61.5A; unidirectional; SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 61.5A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DMT6010SCT | DIODES INCORPORATED |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 98A; Idm: 160A; 104W; TO220-3 Drain current: 98A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO220-3 On-state resistance: 7.2mΩ Mounting: THT Pulsed drain current: 160A Power dissipation: 104W Gate charge: 36.3nC Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BCX55TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 1A; 1W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 1W Case: SOT89 Mounting: SMD Frequency: 150MHz Kind of package: reel; tape Manufacturer standard package: 1000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BCX5516TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 1A; 1W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 1W Case: SOT89 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Manufacturer standard package: 1000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BCX55TC | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 1A; 1W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 1W Case: SOT89 Pulsed collector current: 1.5A Mounting: SMD Frequency: 150MHz |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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DZ23C12-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 12V; SMD; SOT23; double,common cathode Mounting: SMD Case: SOT23 Kind of package: reel; tape Semiconductor structure: common cathode; double Zener voltage: 12V Type of diode: Zener Tolerance: ±5% Power dissipation: 0.3W |
на замовлення 1518 шт: термін постачання 14-30 дні (днів) |
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MBR20150SCTF-G1 | DIODES INCORPORATED |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 150V; 10Ax2; TO220FP; Ufmax: 0.9V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 150V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220FP Max. forward voltage: 0.9V Max. forward impulse current: 150A Kind of package: tube Leakage current: 20mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ZVN3306A | DIODES INCORPORATED |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.27A; Idm: 3A; 0.625W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.27A Pulsed drain current: 3A Power dissipation: 0.625W Case: TO92 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: THT Kind of package: bulk Kind of channel: enhancement |
на замовлення 3472 шт: термін постачання 14-30 дні (днів) |
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ZVN3306ASTZ | DIODES INCORPORATED |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.27A; Idm: 3A; 0.625W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.27A Pulsed drain current: 3A Power dissipation: 0.625W Case: TO92 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: THT Kind of package: Ammo Pack Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74HCT126S14-13 | DIODES INCORPORATED |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; SO14; HCT Mounting: SMD Supply voltage: 4.5...5.5V DC Manufacturer series: HCT Type of integrated circuit: digital Kind of output: 3-state Operating temperature: -40...125°C Technology: CMOS; TTL Quiescent current: 40µA Kind of package: reel; tape Case: SO14 Kind of integrated circuit: buffer; non-inverting Number of channels: 4 |
на замовлення 690 шт: термін постачання 14-30 дні (днів) |
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AP3125BKTR-G1 | DIODES INCORPORATED |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 350mA; 20÷70kHz; Ch: 1; SOT26; flyback Topology: flyback Mounting: SMD Supply voltage: 10...25V Output current: 0.35A Type of integrated circuit: PMIC Operating temperature: -20...125°C Duty cycle factor: 0...80% Application: SMPS Case: SOT26 Kind of integrated circuit: PWM controller Number of channels: 1 Frequency: 20...70kHz |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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DXT3904-13 | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.2A; 1.2W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 1.2W Case: SOT89 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Manufacturer standard package: 2500pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMN2100UDM-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.6W; SOT26; ESD Mounting: SMD Power dissipation: 0.6W Polarisation: unipolar Version: ESD Drain current: 2.5A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±8V Kind of package: 7 inch reel; tape Case: SOT26 On-state resistance: 0.13Ω |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| DMN21D2UFB-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.7A Pulsed drain current: 1A Power dissipation: 570mW Case: X1-DFN1006-3 Gate-source voltage: ±12V On-state resistance: 3Ω Mounting: SMD Gate charge: 930pC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| DMN21D2UFB-7B | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.7A Pulsed drain current: 1A Power dissipation: 570mW Case: X1-DFN1006-3 Gate-source voltage: ±12V On-state resistance: 3Ω Mounting: SMD Gate charge: 930pC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||
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DXT5401-13 | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 150V; 0.6A; 1W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 0.6A Power dissipation: 1W Case: SOT89 Current gain: 50...240 Mounting: SMD Kind of package: reel; tape Frequency: 100...300MHz Manufacturer standard package: 2500pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DZT5401-13 | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 150V; 0.6A; 1W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 0.6A Power dissipation: 1W Case: SOT223 Current gain: 50...240 Mounting: SMD Kind of package: reel; tape Frequency: 100...300MHz Manufacturer standard package: 2500pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMDT5401-7-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; 150V; 0.2A; 200mW; SOT363 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 0.2A Power dissipation: 0.2W Case: SOT363 Current gain: 60...240 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Manufacturer standard package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMST5401-7-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 150V; 200mA; 200mW; SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 0.2A Power dissipation: 0.2W Case: SOT323 Current gain: 50...240 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Manufacturer standard package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMST5401Q-7-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 150V; 0.2A; 200mW; SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 0.2A Power dissipation: 0.2W Case: SOT323 Current gain: 50...240 Mounting: SMD Kind of package: reel; tape Frequency: 100...300MHz Application: automotive industry Manufacturer standard package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMDT5401Q-7-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; 150V; 0.2A; 320mW; SOT363 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 0.2A Power dissipation: 0.32W Case: SOT363 Current gain: 50...240 Mounting: SMD Kind of package: reel; tape Frequency: 100...300MHz Application: automotive industry Manufacturer standard package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMBZ5223B-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.35W; 2.7V; SMD; SOT23; single diode; reel,tape Case: SOT23 Mounting: SMD Kind of package: reel; tape Tolerance: ±5% Semiconductor structure: single diode Zener voltage: 2.7V Type of diode: Zener Power dissipation: 0.35W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| MMBZ5223BT-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.15W; 2.7V; SMD; SOT523; single diode; reel,tape Case: SOT523 Mounting: SMD Kind of package: reel; tape Tolerance: ±5% Semiconductor structure: single diode Zener voltage: 2.7V Type of diode: Zener Power dissipation: 0.15W |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
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MMBZ5223BW-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 2.7V; SMD; SOT323; single diode; reel,tape Case: SOT323 Mounting: SMD Kind of package: reel; tape Tolerance: ±5% Semiconductor structure: single diode Zener voltage: 2.7V Type of diode: Zener Power dissipation: 0.2W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DLD101-7 | DIODES INCORPORATED |
Category: LED driversDescription: IC: driver; single transistor; LED driver; DFN8; 800mA; Ch: 1 Case: DFN8 Mounting: SMD Number of channels: 1 Output current: 0.8A Type of integrated circuit: driver Operating temperature: -40...85°C Integrated circuit features: linear dimming; PWM Kind of package: reel; tape Kind of integrated circuit: LED driver Operating voltage: 5...50V DC Topology: single transistor |
на замовлення 480 шт: термін постачання 14-30 дні (днів) |
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DLD101Q-7 | DIODES INCORPORATED |
Category: LED driversDescription: IC: driver; single transistor; LED driver; DFN8; 800mA; Ch: 1 Case: DFN8 Mounting: SMD Number of channels: 1 Application: automotive industry Output current: 0.8A Type of integrated circuit: driver Operating temperature: -40...85°C Integrated circuit features: linear dimming; PWM Kind of package: reel; tape Kind of integrated circuit: LED driver Operating voltage: 5...50V DC Topology: single transistor |
на замовлення 2979 шт: термін постачання 14-30 дні (днів) |
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AH1883-ZG-7 | DIODES INCORPORATED |
Category: Hall SensorsDescription: Sensor: Hall; omnipolar; SOT553; SMT; Temp: -40÷85°C; OUT: push/pull Operating temperature: -40...85°C Type of sensor: Hall Mounting: SMT Kind of sensor: omnipolar Output configuration: push/pull Case: SOT553 |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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| AH1810-W-7 | DIODES INCORPORATED |
Category: Hall Sensors Description: Sensor: Hall; omnipolar; SC59; SMT; Temp: -40÷85°C Operating temperature: -40...85°C Type of sensor: Hall Mounting: SMT Kind of sensor: omnipolar Case: SC59 |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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| AH1822-FT4G-7 | DIODES INCORPORATED |
Category: Hall SensorsDescription: Sensor: Hall; omnipolar; DFN2015-6; SMT; Temp: -40÷85°C Operating temperature: -40...85°C Type of sensor: Hall Mounting: SMT Kind of sensor: omnipolar Case: DFN2015-6 |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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AH1887-ZG-7 | DIODES INCORPORATED |
Category: Hall SensorsDescription: Sensor: Hall; omnipolar; SOT553; SMT; Temp: -40÷85°C; OUT: push/pull Operating temperature: -40...85°C Type of sensor: Hall Mounting: SMT Kind of sensor: omnipolar Output configuration: push/pull Case: SOT553 |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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AH1892-Z-7 | DIODES INCORPORATED |
Category: Hall SensorsDescription: Sensor: Hall; omnipolar; SOT553; SMT; Temp: -40÷85°C; OUT: push/pull Operating temperature: -40...85°C Type of sensor: Hall Mounting: SMT Kind of sensor: omnipolar Output configuration: push/pull Case: SOT553 |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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AH1894-Z-7 | DIODES INCORPORATED |
Category: Hall SensorsDescription: Sensor: Hall; omnipolar; SOT553; SMT; Temp: -40÷85°C; OUT: push/pull Operating temperature: -40...85°C Type of sensor: Hall Mounting: SMT Kind of sensor: omnipolar Output configuration: push/pull Case: SOT553 |
на замовлення 9000 шт: термін постачання 14-30 дні (днів) |
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DMN3135LVT-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 2.7A; Idm: 25A; 0.84W; TSOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.7A Pulsed drain current: 25A Power dissipation: 0.84W Case: TSOT26 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DFLS1100Q-7 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; PowerDI®123; SMD; 100V; 1A; reel,tape Case: PowerDI®123 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 50A Max. forward voltage: 0.86V Application: automotive industry Max. off-state voltage: 0.1kV Load current: 1A Semiconductor structure: single diode Leakage current: 0.35mA Capacitance: 36pF Type of diode: Schottky rectifying |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
| DMN1019USN-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 12V; 8.8A; Idm: 70A; 830mW; SC59 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 12V Drain current: 8.8A Pulsed drain current: 70A Power dissipation: 0.83W Case: SC59 Gate-source voltage: ±8V On-state resistance: 41mΩ Mounting: SMD Gate charge: 50.6nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||
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DMN1019UVT-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 12V; 10.1A; Idm: 70A; 1.11W; TSOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 12V Drain current: 10.1A Pulsed drain current: 70A Power dissipation: 1.11W Case: TSOT26 Gate-source voltage: ±8V On-state resistance: 41mΩ Mounting: SMD Gate charge: 50.4nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| DMN1019UFDE-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 12V; 5A; 0.69W; U-DFN2020-6; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 12V Drain current: 5A Power dissipation: 0.69W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 41mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DMN1019UVT-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 12V; 10.1A; Idm: 70A; 1.11W; TSOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 12V Drain current: 10.1A Pulsed drain current: 70A Power dissipation: 1.11W Case: TSOT26 Gate-source voltage: ±8V On-state resistance: 41mΩ Mounting: SMD Gate charge: 50.4nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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1SMB5938B-13 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 36V; SMD; SMB; single diode; reel,tape Type of diode: Zener Power dissipation: 3W Zener voltage: 36V Mounting: SMD Tolerance: ±5% Case: SMB Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ZXMS6004DN8-13 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 1.3A; Ch: 2; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 1.3A Number of channels: 2 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.6Ω Kind of package: reel; tape Supply voltage: 0...5.5V DC Operating temperature: -40...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ZXMS6004DN8Q-13 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 1.3A; Ch: 2; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 1.3A Number of channels: 2 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.6Ω Kind of package: reel; tape Supply voltage: 0...5.5V DC Operating temperature: -40...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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D3V3M1U2S9-7 | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 5V; 12A; unidirectional; SOD923; reel,tape Type of diode: TVS Max. off-state voltage: 3.3V Breakdown voltage: 5V Max. forward impulse current: 12A Semiconductor structure: unidirectional Case: SOD923 Mounting: SMD Leakage current: 2µA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| T3V3S5A-7 | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 220W; 5V; 16A; unidirectional; SOD523F; reel,tape Type of diode: TVS Peak pulse power dissipation: 220W Max. off-state voltage: 3.3V Breakdown voltage: 5V Max. forward impulse current: 16A Semiconductor structure: unidirectional Case: SOD523F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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AP3401DNTR-G1 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; DFN6 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 2.5...5.5V DC Output voltage: 0.6...5.5V DC Output current: 1A Case: DFN6 Mounting: SMD Frequency: 1.5MHz Topology: buck Operating temperature: -40...85°C Kind of package: reel; tape Efficiency: 95% |
на замовлення 2392 шт: термін постачання 14-30 дні (днів) |
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DMN3401LDW-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 600mA; Idm: 4A; 350mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.6A Pulsed drain current: 4A Power dissipation: 0.35W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 0.7Ω Mounting: SMD Gate charge: 1.2nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
на замовлення 2899 шт: термін постачання 14-30 дні (днів) |
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PI49FCT3807AHE | DIODES INCORPORATED |
Category: Other logic integrated circuitsDescription: IC: peripheral circuit; clock buffer,fanout buffer; Ch: 1; 3.3VDC Type of integrated circuit: peripheral circuit Kind of integrated circuit: clock buffer; fanout buffer Number of channels: 1 Supply voltage: 3.3V DC Mounting: SMD Case: SSOP20 Operating temperature: -40...85°C Kind of package: tube Frequency: 66MHz Number of inputs/outputs: 1/10 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ZXMN6A08E6TA | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 3.5A; 1.1W; SOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.5A Power dissipation: 1.1W Case: SOT26 On-state resistance: 80mΩ Mounting: SMD Gate charge: 5.8nC Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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ZXMN6A08E6QTA | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 3.5A; Idm: 16A; 1.7W; SOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.5A Power dissipation: 1.7W Case: SOT26 On-state resistance: 80mΩ Mounting: SMD Gate charge: 5.8nC Kind of channel: enhancement Pulsed drain current: 16A Gate-source voltage: ±20V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
LM2904AM8-13 | DIODES INCORPORATED |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; MSOP8; 100dB Type of integrated circuit: operational amplifier Bandwidth: 0.7MHz Number of channels: 2 Mounting: SMT Voltage supply range: 3...36V DC Case: MSOP8 Operating temperature: -40...125°C Slew rate: 0.3V/μs Integrated circuit features: low power Input offset voltage: 1mV Kind of package: reel; tape Open-loop gain: 100dB |
на замовлення 381 шт: термін постачання 14-30 дні (днів) |
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LM2904M8-13 | DIODES INCORPORATED |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; MSOP8; 100dB Type of integrated circuit: operational amplifier Bandwidth: 0.7MHz Number of channels: 2 Mounting: SMT Voltage supply range: 3...36V DC Case: MSOP8 Operating temperature: -40...85°C Slew rate: 0.3V/μs Integrated circuit features: low power Input offset voltage: 2mV Kind of package: reel; tape Open-loop gain: 100dB |
на замовлення 27 шт: термін постачання 14-30 дні (днів) |
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LM2904TH-13 | DIODES INCORPORATED |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; TSSOP8; 100dB Type of integrated circuit: operational amplifier Bandwidth: 0.7MHz Number of channels: 2 Mounting: SMT Voltage supply range: 3...36V DC Case: TSSOP8 Operating temperature: -40...85°C Slew rate: 0.3V/μs Input offset voltage: 2mV Kind of package: reel; tape Open-loop gain: 100dB |
на замовлення 1272 шт: термін постачання 14-30 дні (днів) |
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LM2904S-13 | DIODES INCORPORATED |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; SO8; 100dB; 2mV Type of integrated circuit: operational amplifier Bandwidth: 0.7MHz Number of channels: 4 Mounting: SMT Voltage supply range: 3...36V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 0.3V/μs Input offset voltage: 2mV Kind of package: reel; tape Open-loop gain: 100dB |
на замовлення 647 шт: термін постачання 14-30 дні (днів) |
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MMSTA92-7-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 300V; 0.1A; 200mW; SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Manufacturer standard package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| B530CQ-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 30V; 5A; 16ns; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 30V Max. forward impulse current: 100A Semiconductor structure: single diode Case: SMC Mounting: SMD Leakage current: 20mA Kind of package: reel; tape Reverse recovery time: 16ns Max. forward voltage: 0.55V Application: automotive industry Load current: 5A Capacitance: 0.3nF |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
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AP1117EG-13 | DIODES INCORPORATED |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 1.25÷5V; 1A; SOT223 Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 1.2V Output voltage: 1.25...5V Output current: 1A Case: SOT223 Mounting: SMD Manufacturer series: AP1117 Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 4.8...12V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
| S10MC-13 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 10A; SMC; Ufmax: 1.1V; Ifsm: 200A Max. forward voltage: 1.1V Max. off-state voltage: 1kV Load current: 10A Kind of package: reel; tape Semiconductor structure: single diode Case: SMC Capacitance: 45pF Type of diode: rectifying Mounting: SMD Max. forward impulse current: 200A |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| SMF4L30A-7 |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; DO219AA
Mounting: SMD
Max. forward impulse current: 8.3A
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 0.5µA
Case: DO219AA
Type of diode: TVS
Breakdown voltage: 33.3...36.8V
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; DO219AA
Mounting: SMD
Max. forward impulse current: 8.3A
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 0.5µA
Case: DO219AA
Type of diode: TVS
Breakdown voltage: 33.3...36.8V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| ZXMN4A06GTA |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.6A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 5.6A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.6A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 5.6A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 131 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 108.48 грн |
| 10+ | 63.32 грн |
| 100+ | 44.27 грн |
| SMAJ20A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; unidirectional; SMA
Type of diode: TVS
Max. off-state voltage: 20V
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 0.4kW
Features of semiconductor devices: glass passivated
Leakage current: 5µA
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; unidirectional; SMA
Type of diode: TVS
Max. off-state voltage: 20V
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 0.4kW
Features of semiconductor devices: glass passivated
Leakage current: 5µA
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
на замовлення 192 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 16.41 грн |
| 39+ | 11.00 грн |
| 45+ | 9.48 грн |
| 100+ | 6.18 грн |
| SMCJ36CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
| SMCJ15AQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷18.5V; 61.5A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 61.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷18.5V; 61.5A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 61.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| DMT6010SCT |
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Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 98A; Idm: 160A; 104W; TO220-3
Drain current: 98A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
On-state resistance: 7.2mΩ
Mounting: THT
Pulsed drain current: 160A
Power dissipation: 104W
Gate charge: 36.3nC
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 98A; Idm: 160A; 104W; TO220-3
Drain current: 98A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
On-state resistance: 7.2mΩ
Mounting: THT
Pulsed drain current: 160A
Power dissipation: 104W
Gate charge: 36.3nC
Polarisation: unipolar
товару немає в наявності
В кошику
од. на суму грн.
| BCX55TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Frequency: 150MHz
Kind of package: reel; tape
Manufacturer standard package: 1000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Frequency: 150MHz
Kind of package: reel; tape
Manufacturer standard package: 1000pcs.
товару немає в наявності
В кошику
од. на суму грн.
| BCX5516TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 1000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 1000pcs.
товару немає в наявності
В кошику
од. на суму грн.
| BCX55TC |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Pulsed collector current: 1.5A
Mounting: SMD
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Pulsed collector current: 1.5A
Mounting: SMD
Frequency: 150MHz
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| DZ23C12-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; SOT23; double,common cathode
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Zener voltage: 12V
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.3W
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; SOT23; double,common cathode
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Zener voltage: 12V
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.3W
на замовлення 1518 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 15.50 грн |
| 37+ | 11.68 грн |
| 43+ | 10.07 грн |
| 61+ | 7.04 грн |
| 100+ | 6.02 грн |
| 500+ | 4.33 грн |
| 1000+ | 4.14 грн |
| MBR20150SCTF-G1 |
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Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 10Ax2; TO220FP; Ufmax: 0.9V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.9V
Max. forward impulse current: 150A
Kind of package: tube
Leakage current: 20mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 10Ax2; TO220FP; Ufmax: 0.9V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.9V
Max. forward impulse current: 150A
Kind of package: tube
Leakage current: 20mA
товару немає в наявності
В кошику
од. на суму грн.
| ZVN3306A |
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Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.27A; Idm: 3A; 0.625W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.27A
Pulsed drain current: 3A
Power dissipation: 0.625W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.27A; Idm: 3A; 0.625W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.27A
Pulsed drain current: 3A
Power dissipation: 0.625W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
на замовлення 3472 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 83.87 грн |
| 10+ | 45.63 грн |
| 40+ | 34.45 грн |
| 100+ | 29.37 грн |
| 200+ | 26.41 грн |
| 500+ | 23.45 грн |
| 1000+ | 21.84 грн |
| ZVN3306ASTZ |
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Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.27A; Idm: 3A; 0.625W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.27A
Pulsed drain current: 3A
Power dissipation: 0.625W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.27A; Idm: 3A; 0.625W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.27A
Pulsed drain current: 3A
Power dissipation: 0.625W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
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В кошику
од. на суму грн.
| 74HCT126S14-13 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; SO14; HCT
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Type of integrated circuit: digital
Kind of output: 3-state
Operating temperature: -40...125°C
Technology: CMOS; TTL
Quiescent current: 40µA
Kind of package: reel; tape
Case: SO14
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; SO14; HCT
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Type of integrated circuit: digital
Kind of output: 3-state
Operating temperature: -40...125°C
Technology: CMOS; TTL
Quiescent current: 40µA
Kind of package: reel; tape
Case: SO14
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
на замовлення 690 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 16.41 грн |
| 40+ | 10.84 грн |
| 46+ | 9.40 грн |
| 100+ | 7.79 грн |
| 250+ | 7.11 грн |
| 500+ | 7.03 грн |
| AP3125BKTR-G1 |
Виробник: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 350mA; 20÷70kHz; Ch: 1; SOT26; flyback
Topology: flyback
Mounting: SMD
Supply voltage: 10...25V
Output current: 0.35A
Type of integrated circuit: PMIC
Operating temperature: -20...125°C
Duty cycle factor: 0...80%
Application: SMPS
Case: SOT26
Kind of integrated circuit: PWM controller
Number of channels: 1
Frequency: 20...70kHz
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 350mA; 20÷70kHz; Ch: 1; SOT26; flyback
Topology: flyback
Mounting: SMD
Supply voltage: 10...25V
Output current: 0.35A
Type of integrated circuit: PMIC
Operating temperature: -20...125°C
Duty cycle factor: 0...80%
Application: SMPS
Case: SOT26
Kind of integrated circuit: PWM controller
Number of channels: 1
Frequency: 20...70kHz
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Мінімальне замовлення: 3000 шт
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| DXT3904-13 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.2W
Case: SOT89
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 2500pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.2W
Case: SOT89
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 2500pcs.
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| DMN2100UDM-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.6W; SOT26; ESD
Mounting: SMD
Power dissipation: 0.6W
Polarisation: unipolar
Version: ESD
Drain current: 2.5A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Case: SOT26
On-state resistance: 0.13Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.6W; SOT26; ESD
Mounting: SMD
Power dissipation: 0.6W
Polarisation: unipolar
Version: ESD
Drain current: 2.5A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Case: SOT26
On-state resistance: 0.13Ω
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| DMN21D2UFB-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.7A
Pulsed drain current: 1A
Power dissipation: 570mW
Case: X1-DFN1006-3
Gate-source voltage: ±12V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 930pC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.7A
Pulsed drain current: 1A
Power dissipation: 570mW
Case: X1-DFN1006-3
Gate-source voltage: ±12V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 930pC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| DMN21D2UFB-7B |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.7A
Pulsed drain current: 1A
Power dissipation: 570mW
Case: X1-DFN1006-3
Gate-source voltage: ±12V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 930pC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.7A
Pulsed drain current: 1A
Power dissipation: 570mW
Case: X1-DFN1006-3
Gate-source voltage: ±12V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 930pC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 10000 шт
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| DXT5401-13 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.6A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.6A
Power dissipation: 1W
Case: SOT89
Current gain: 50...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Manufacturer standard package: 2500pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.6A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.6A
Power dissipation: 1W
Case: SOT89
Current gain: 50...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Manufacturer standard package: 2500pcs.
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| DZT5401-13 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.6A; 1W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.6A
Power dissipation: 1W
Case: SOT223
Current gain: 50...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Manufacturer standard package: 2500pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.6A; 1W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.6A
Power dissipation: 1W
Case: SOT223
Current gain: 50...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Manufacturer standard package: 2500pcs.
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| MMDT5401-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 150V; 0.2A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 150V; 0.2A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 3000pcs.
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| MMST5401-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 200mA; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT323
Current gain: 50...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 200mA; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT323
Current gain: 50...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 3000pcs.
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| MMST5401Q-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.2A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT323
Current gain: 50...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Application: automotive industry
Manufacturer standard package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.2A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT323
Current gain: 50...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Application: automotive industry
Manufacturer standard package: 3000pcs.
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| MMDT5401Q-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 150V; 0.2A; 320mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.2A
Power dissipation: 0.32W
Case: SOT363
Current gain: 50...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Application: automotive industry
Manufacturer standard package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 150V; 0.2A; 320mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.2A
Power dissipation: 0.32W
Case: SOT363
Current gain: 50...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Application: automotive industry
Manufacturer standard package: 3000pcs.
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| MMBZ5223B-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 2.7V; SMD; SOT23; single diode; reel,tape
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 2.7V
Type of diode: Zener
Power dissipation: 0.35W
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 2.7V; SMD; SOT23; single diode; reel,tape
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 2.7V
Type of diode: Zener
Power dissipation: 0.35W
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| MMBZ5223BT-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 2.7V; SMD; SOT523; single diode; reel,tape
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 2.7V
Type of diode: Zener
Power dissipation: 0.15W
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 2.7V; SMD; SOT523; single diode; reel,tape
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 2.7V
Type of diode: Zener
Power dissipation: 0.15W
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Мінімальне замовлення: 3000 шт
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| MMBZ5223BW-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.7V; SMD; SOT323; single diode; reel,tape
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 2.7V
Type of diode: Zener
Power dissipation: 0.2W
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 2.7V; SMD; SOT323; single diode; reel,tape
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 2.7V
Type of diode: Zener
Power dissipation: 0.2W
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| DLD101-7 |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; LED driver; DFN8; 800mA; Ch: 1
Case: DFN8
Mounting: SMD
Number of channels: 1
Output current: 0.8A
Type of integrated circuit: driver
Operating temperature: -40...85°C
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Kind of integrated circuit: LED driver
Operating voltage: 5...50V DC
Topology: single transistor
Category: LED drivers
Description: IC: driver; single transistor; LED driver; DFN8; 800mA; Ch: 1
Case: DFN8
Mounting: SMD
Number of channels: 1
Output current: 0.8A
Type of integrated circuit: driver
Operating temperature: -40...85°C
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Kind of integrated circuit: LED driver
Operating voltage: 5...50V DC
Topology: single transistor
на замовлення 480 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 40.11 грн |
| 17+ | 25.48 грн |
| 25+ | 22.86 грн |
| 100+ | 18.37 грн |
| 250+ | 15.66 грн |
| DLD101Q-7 |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; LED driver; DFN8; 800mA; Ch: 1
Case: DFN8
Mounting: SMD
Number of channels: 1
Application: automotive industry
Output current: 0.8A
Type of integrated circuit: driver
Operating temperature: -40...85°C
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Kind of integrated circuit: LED driver
Operating voltage: 5...50V DC
Topology: single transistor
Category: LED drivers
Description: IC: driver; single transistor; LED driver; DFN8; 800mA; Ch: 1
Case: DFN8
Mounting: SMD
Number of channels: 1
Application: automotive industry
Output current: 0.8A
Type of integrated circuit: driver
Operating temperature: -40...85°C
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Kind of integrated circuit: LED driver
Operating voltage: 5...50V DC
Topology: single transistor
на замовлення 2979 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 57.43 грн |
| 21+ | 20.99 грн |
| 25+ | 18.54 грн |
| 100+ | 18.28 грн |
| AH1883-ZG-7 |
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Виробник: DIODES INCORPORATED
Category: Hall Sensors
Description: Sensor: Hall; omnipolar; SOT553; SMT; Temp: -40÷85°C; OUT: push/pull
Operating temperature: -40...85°C
Type of sensor: Hall
Mounting: SMT
Kind of sensor: omnipolar
Output configuration: push/pull
Case: SOT553
Category: Hall Sensors
Description: Sensor: Hall; omnipolar; SOT553; SMT; Temp: -40÷85°C; OUT: push/pull
Operating temperature: -40...85°C
Type of sensor: Hall
Mounting: SMT
Kind of sensor: omnipolar
Output configuration: push/pull
Case: SOT553
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 33.09 грн |
| AH1810-W-7 |
Виробник: DIODES INCORPORATED
Category: Hall Sensors
Description: Sensor: Hall; omnipolar; SC59; SMT; Temp: -40÷85°C
Operating temperature: -40...85°C
Type of sensor: Hall
Mounting: SMT
Kind of sensor: omnipolar
Case: SC59
Category: Hall Sensors
Description: Sensor: Hall; omnipolar; SC59; SMT; Temp: -40÷85°C
Operating temperature: -40...85°C
Type of sensor: Hall
Mounting: SMT
Kind of sensor: omnipolar
Case: SC59
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 31.00 грн |
| AH1822-FT4G-7 |
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Виробник: DIODES INCORPORATED
Category: Hall Sensors
Description: Sensor: Hall; omnipolar; DFN2015-6; SMT; Temp: -40÷85°C
Operating temperature: -40...85°C
Type of sensor: Hall
Mounting: SMT
Kind of sensor: omnipolar
Case: DFN2015-6
Category: Hall Sensors
Description: Sensor: Hall; omnipolar; DFN2015-6; SMT; Temp: -40÷85°C
Operating temperature: -40...85°C
Type of sensor: Hall
Mounting: SMT
Kind of sensor: omnipolar
Case: DFN2015-6
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 49.32 грн |
| AH1887-ZG-7 |
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Виробник: DIODES INCORPORATED
Category: Hall Sensors
Description: Sensor: Hall; omnipolar; SOT553; SMT; Temp: -40÷85°C; OUT: push/pull
Operating temperature: -40...85°C
Type of sensor: Hall
Mounting: SMT
Kind of sensor: omnipolar
Output configuration: push/pull
Case: SOT553
Category: Hall Sensors
Description: Sensor: Hall; omnipolar; SOT553; SMT; Temp: -40÷85°C; OUT: push/pull
Operating temperature: -40...85°C
Type of sensor: Hall
Mounting: SMT
Kind of sensor: omnipolar
Output configuration: push/pull
Case: SOT553
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 39.20 грн |
| AH1892-Z-7 |
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Виробник: DIODES INCORPORATED
Category: Hall Sensors
Description: Sensor: Hall; omnipolar; SOT553; SMT; Temp: -40÷85°C; OUT: push/pull
Operating temperature: -40...85°C
Type of sensor: Hall
Mounting: SMT
Kind of sensor: omnipolar
Output configuration: push/pull
Case: SOT553
Category: Hall Sensors
Description: Sensor: Hall; omnipolar; SOT553; SMT; Temp: -40÷85°C; OUT: push/pull
Operating temperature: -40...85°C
Type of sensor: Hall
Mounting: SMT
Kind of sensor: omnipolar
Output configuration: push/pull
Case: SOT553
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 25.80 грн |
| AH1894-Z-7 |
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Виробник: DIODES INCORPORATED
Category: Hall Sensors
Description: Sensor: Hall; omnipolar; SOT553; SMT; Temp: -40÷85°C; OUT: push/pull
Operating temperature: -40...85°C
Type of sensor: Hall
Mounting: SMT
Kind of sensor: omnipolar
Output configuration: push/pull
Case: SOT553
Category: Hall Sensors
Description: Sensor: Hall; omnipolar; SOT553; SMT; Temp: -40÷85°C; OUT: push/pull
Operating temperature: -40...85°C
Type of sensor: Hall
Mounting: SMT
Kind of sensor: omnipolar
Output configuration: push/pull
Case: SOT553
на замовлення 9000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 34.19 грн |
| DMN3135LVT-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; Idm: 25A; 0.84W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Pulsed drain current: 25A
Power dissipation: 0.84W
Case: TSOT26
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; Idm: 25A; 0.84W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Pulsed drain current: 25A
Power dissipation: 0.84W
Case: TSOT26
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| DFLS1100Q-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 100V; 1A; reel,tape
Case: PowerDI®123
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 50A
Max. forward voltage: 0.86V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Leakage current: 0.35mA
Capacitance: 36pF
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 100V; 1A; reel,tape
Case: PowerDI®123
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 50A
Max. forward voltage: 0.86V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Leakage current: 0.35mA
Capacitance: 36pF
Type of diode: Schottky rectifying
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| DMN1019USN-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 8.8A; Idm: 70A; 830mW; SC59
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 8.8A
Pulsed drain current: 70A
Power dissipation: 0.83W
Case: SC59
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 50.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 8.8A; Idm: 70A; 830mW; SC59
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 8.8A
Pulsed drain current: 70A
Power dissipation: 0.83W
Case: SC59
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 50.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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| DMN1019UVT-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 10.1A; Idm: 70A; 1.11W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 10.1A
Pulsed drain current: 70A
Power dissipation: 1.11W
Case: TSOT26
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 50.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 10.1A; Idm: 70A; 1.11W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 10.1A
Pulsed drain current: 70A
Power dissipation: 1.11W
Case: TSOT26
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 50.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| DMN1019UFDE-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 5A; 0.69W; U-DFN2020-6; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 5A
Power dissipation: 0.69W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 5A; 0.69W; U-DFN2020-6; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 5A
Power dissipation: 0.69W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
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| DMN1019UVT-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 10.1A; Idm: 70A; 1.11W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 10.1A
Pulsed drain current: 70A
Power dissipation: 1.11W
Case: TSOT26
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 50.4nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 10.1A; Idm: 70A; 1.11W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 10.1A
Pulsed drain current: 70A
Power dissipation: 1.11W
Case: TSOT26
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 50.4nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 10000 шт
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| 1SMB5938B-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 36V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 36V; SMD; SMB; single diode; reel,tape
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
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| ZXMS6004DN8-13 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 2; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.6Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 2; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.6Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
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| ZXMS6004DN8Q-13 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 2; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.6Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 2; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.6Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
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| D3V3M1U2S9-7 |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; 12A; unidirectional; SOD923; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Case: SOD923
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; 12A; unidirectional; SOD923; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Case: SOD923
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
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| T3V3S5A-7 |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 220W; 5V; 16A; unidirectional; SOD523F; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 220W
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: SOD523F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 220W; 5V; 16A; unidirectional; SOD523F; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 220W
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: SOD523F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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| AP3401DNTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; DFN6
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 1A
Case: DFN6
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A; DFN6
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 1A
Case: DFN6
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
на замовлення 2392 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 23.70 грн |
| 25+ | 17.10 грн |
| 30+ | 14.31 грн |
| 38+ | 11.17 грн |
| DMN3401LDW-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 600mA; Idm: 4A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 4A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 1.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 600mA; Idm: 4A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 4A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 1.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 2899 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 24.61 грн |
| 28+ | 15.15 грн |
| 100+ | 9.24 грн |
| 250+ | 7.71 грн |
| 500+ | 6.77 грн |
| 1000+ | 5.99 грн |
| PI49FCT3807AHE |
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Виробник: DIODES INCORPORATED
Category: Other logic integrated circuits
Description: IC: peripheral circuit; clock buffer,fanout buffer; Ch: 1; 3.3VDC
Type of integrated circuit: peripheral circuit
Kind of integrated circuit: clock buffer; fanout buffer
Number of channels: 1
Supply voltage: 3.3V DC
Mounting: SMD
Case: SSOP20
Operating temperature: -40...85°C
Kind of package: tube
Frequency: 66MHz
Number of inputs/outputs: 1/10
Category: Other logic integrated circuits
Description: IC: peripheral circuit; clock buffer,fanout buffer; Ch: 1; 3.3VDC
Type of integrated circuit: peripheral circuit
Kind of integrated circuit: clock buffer; fanout buffer
Number of channels: 1
Supply voltage: 3.3V DC
Mounting: SMD
Case: SSOP20
Operating temperature: -40...85°C
Kind of package: tube
Frequency: 66MHz
Number of inputs/outputs: 1/10
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| ZXMN6A08E6TA |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.5A; 1.1W; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Power dissipation: 1.1W
Case: SOT26
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.5A; 1.1W; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Power dissipation: 1.1W
Case: SOT26
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of channel: enhancement
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Мінімальне замовлення: 3000 шт
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| ZXMN6A08E6QTA |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.5A; Idm: 16A; 1.7W; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Power dissipation: 1.7W
Case: SOT26
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of channel: enhancement
Pulsed drain current: 16A
Gate-source voltage: ±20V
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.5A; Idm: 16A; 1.7W; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Power dissipation: 1.7W
Case: SOT26
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of channel: enhancement
Pulsed drain current: 16A
Gate-source voltage: ±20V
Kind of package: reel; tape
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| LM2904AM8-13 |
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Виробник: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; MSOP8; 100dB
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: MSOP8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Integrated circuit features: low power
Input offset voltage: 1mV
Kind of package: reel; tape
Open-loop gain: 100dB
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; MSOP8; 100dB
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: MSOP8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Integrated circuit features: low power
Input offset voltage: 1mV
Kind of package: reel; tape
Open-loop gain: 100dB
на замовлення 381 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 11.85 грн |
| 50+ | 8.47 грн |
| LM2904M8-13 |
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Виробник: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; MSOP8; 100dB
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: MSOP8
Operating temperature: -40...85°C
Slew rate: 0.3V/μs
Integrated circuit features: low power
Input offset voltage: 2mV
Kind of package: reel; tape
Open-loop gain: 100dB
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; MSOP8; 100dB
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: MSOP8
Operating temperature: -40...85°C
Slew rate: 0.3V/μs
Integrated circuit features: low power
Input offset voltage: 2mV
Kind of package: reel; tape
Open-loop gain: 100dB
на замовлення 27 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 16.08 грн |
| LM2904TH-13 |
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Виробник: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; TSSOP8; 100dB
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: TSSOP8
Operating temperature: -40...85°C
Slew rate: 0.3V/μs
Input offset voltage: 2mV
Kind of package: reel; tape
Open-loop gain: 100dB
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 2; 3÷36VDC; TSSOP8; 100dB
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...36V DC
Case: TSSOP8
Operating temperature: -40...85°C
Slew rate: 0.3V/μs
Input offset voltage: 2mV
Kind of package: reel; tape
Open-loop gain: 100dB
на замовлення 1272 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 31.00 грн |
| 25+ | 17.61 грн |
| 30+ | 14.14 грн |
| 100+ | 10.33 грн |
| 250+ | 8.55 грн |
| 1000+ | 7.53 грн |
| LM2904S-13 |
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Виробник: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; SO8; 100dB; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 2mV
Kind of package: reel; tape
Open-loop gain: 100dB
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; Ch: 4; 3÷36VDC; SO8; 100dB; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...36V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 2mV
Kind of package: reel; tape
Open-loop gain: 100dB
на замовлення 647 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 31.00 грн |
| 24+ | 17.69 грн |
| 30+ | 14.22 грн |
| 100+ | 10.41 грн |
| 250+ | 8.63 грн |
| MMSTA92-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Manufacturer standard package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Manufacturer standard package: 3000pcs.
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| B530CQ-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 5A; 16ns; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward impulse current: 100A
Semiconductor structure: single diode
Case: SMC
Mounting: SMD
Leakage current: 20mA
Kind of package: reel; tape
Reverse recovery time: 16ns
Max. forward voltage: 0.55V
Application: automotive industry
Load current: 5A
Capacitance: 0.3nF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 5A; 16ns; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward impulse current: 100A
Semiconductor structure: single diode
Case: SMC
Mounting: SMD
Leakage current: 20mA
Kind of package: reel; tape
Reverse recovery time: 16ns
Max. forward voltage: 0.55V
Application: automotive industry
Load current: 5A
Capacitance: 0.3nF
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Мінімальне замовлення: 3000 шт
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| AP1117EG-13 |
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Виробник: DIODES INCORPORATED
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷5V; 1A; SOT223
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.2V
Output voltage: 1.25...5V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: AP1117
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.8...12V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷5V; 1A; SOT223
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.2V
Output voltage: 1.25...5V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: AP1117
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.8...12V
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Мінімальне замовлення: 2500 шт
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| S10MC-13 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 10A; SMC; Ufmax: 1.1V; Ifsm: 200A
Max. forward voltage: 1.1V
Max. off-state voltage: 1kV
Load current: 10A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Capacitance: 45pF
Type of diode: rectifying
Mounting: SMD
Max. forward impulse current: 200A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 10A; SMC; Ufmax: 1.1V; Ifsm: 200A
Max. forward voltage: 1.1V
Max. off-state voltage: 1kV
Load current: 10A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Capacitance: 45pF
Type of diode: rectifying
Mounting: SMD
Max. forward impulse current: 200A
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.







































