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SMAJ130CA-13-F SMAJ130CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 144÷159V; 1.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 130V
Breakdown voltage: 144...159V
Max. forward impulse current: 1.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMAJ13AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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ZVP2120GTA DIODES INCORPORATED ZVP2120G.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -200mA; Idm: -1.2A; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -200mA
Pulsed drain current: -1.2A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 25Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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ZXM61P02FTA ZXM61P02FTA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE799C35493BDBFC749&compId=ZXM61P02F.pdf?ci_sign=814b34e582b88c406996cb3999105ce2ce23f96d description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.7A; 0.625W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -700mA
Power dissipation: 0.625W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2089 шт:
термін постачання 21-30 дні (днів)
20+21.52 грн
29+14.23 грн
75+11.03 грн
Мінімальне замовлення: 20
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SMCJ5.0A-13-F SMCJ5.0A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMCJ5.0AQ-13-F DIODES INCORPORATED SMCJ5.0CAQ_SMCJ110CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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3.0SMCJ5.0A-13 DIODES INCORPORATED 3.0SMCJxx.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 6.4÷7.07V; 326.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 326.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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PSMAJ400A-13 DIODES INCORPORATED PSMAJ400(C)A.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 380÷420V; 0.73A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 342V
Breakdown voltage: 380...420V
Max. forward impulse current: 0.73A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
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SBR60A200CT SBR60A200CT DIODES INCORPORATED SBR60A200CT.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SBR®; THT; 200V; 30Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: THT
Max. off-state voltage: 200V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.96V
Max. forward impulse current: 250A
Kind of package: tube
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SMAJ45A-13-F SMAJ45A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 50÷55.3V; 5.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Features of semiconductor devices: glass passivated
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P4SMAJ45ADF-13 DIODES INCORPORATED P4SMAJ5.0ADF-P4SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 50÷55.3V; 5.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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BAS40DW-05-7-F BAS40DW-05-7-F DIODES INCORPORATED BAS40TW_DW-04_DW-05_DW-06_BRW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT363; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT363
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double x2
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
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BAS40DW-06-7-F BAS40DW-06-7-F DIODES INCORPORATED BAS40TW_DW-04_DW-05_DW-06_BRW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT363; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT363
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double x2
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
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RS3AB-13-F RS3AB-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BAEB10C9F74091BF&compId=RS3AB-13-F-DTE.pdf?ci_sign=6eb924a39f07a2c754fe478059a243413f21d103 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 3A; 150ns; SMB; Ufmax: 1.3V; Ifsm: 100A
Type of diode: rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 50pF
Max. forward impulse current: 100A
Reverse recovery time: 150ns
Kind of package: reel; tape
Max. forward voltage: 1.3V
на замовлення 1592 шт:
термін постачання 21-30 дні (днів)
16+27.54 грн
28+14.55 грн
100+11.03 грн
250+9.75 грн
500+8.79 грн
1000+8.55 грн
Мінімальне замовлення: 16
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SMAJ11A-13-F SMAJ11A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 12.2÷13.5V; 22A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 11V
Breakdown voltage: 12.2...13.5V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 4900 шт:
термін постачання 21-30 дні (днів)
25+17.22 грн
31+13.27 грн
34+11.83 грн
40+10.07 грн
100+7.83 грн
500+5.91 грн
1000+5.28 грн
Мінімальне замовлення: 25
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ZLLS400TA ZLLS400TA DIODES INCORPORATED ZLLS400.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 0.52A; 3ns; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.52A
Semiconductor structure: single diode
Capacitance: 15pF
Max. forward voltage: 0.8V
Leakage current: 370µA
Max. forward impulse current: 12A
Reverse recovery time: 3ns
Kind of package: reel; tape
Power dissipation: 0.37W
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ZLLS400QTA ZLLS400QTA DIODES INCORPORATED ZLLS400Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 0.85A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.85A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 12A
Kind of package: reel; tape
Application: automotive industry
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ZLLS400QTC ZLLS400QTC DIODES INCORPORATED ZLLS400Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 0.52A; 3ns; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.52A
Semiconductor structure: single diode
Capacitance: 15pF
Max. forward voltage: 0.8V
Leakage current: 370µA
Max. forward impulse current: 12A
Reverse recovery time: 3ns
Kind of package: reel; tape
Power dissipation: 0.39W
Application: automotive industry
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DMP3008SFGQ-7 DMP3008SFGQ-7 DIODES INCORPORATED DMP3008SFGQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.1A; 0.9W; PowerDI®3333-8
Case: PowerDI®3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Polarisation: unipolar
Drain-source voltage: -30V
Gate-source voltage: ±20V
Drain current: -7.1A
Kind of channel: enhancement
On-state resistance: 25mΩ
Power dissipation: 0.9W
Application: automotive industry
Type of transistor: P-MOSFET
на замовлення 3241 шт:
термін постачання 21-30 дні (днів)
5+91.24 грн
10+59.07 грн
100+44.44 грн
500+36.05 грн
Мінімальне замовлення: 5
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74AHC1G08SE-7
+1
 		74AHC1G08SE-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED88083479F93E24A18&compId=74AHC1G08.pdf?ci_sign=1a25f740889bc13d63a294564635e9ea9aee4f66 Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SOT353; 2÷5.5VDC; -40÷125°C; AHC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SOT353
Family: AHC
Kind of output: push-pull
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
на замовлення 55 шт:
термін постачання 21-30 дні (днів)
55+7.19 грн
Мінімальне замовлення: 55
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AP2162ASG-13 AP2162ASG-13 DIODES INCORPORATED AP2162A_72A.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 2; P-Channel; SMD
Mounting: SMD
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Kind of output: P-Channel
Type of integrated circuit: power switch
Kind of package: reel; tape
Case: SO8
On-state resistance: 85mΩ
Output current: 1A
Number of channels: 2
Supply voltage: 2.7...5.5V DC
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AP2162AFGEG-7 DIODES INCORPORATED AP2162A_72A.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 2; P-Channel; SMD
Mounting: SMD
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Kind of output: P-Channel
Type of integrated circuit: power switch
Kind of package: reel; tape
Case: U-DFN3030-8
On-state resistance: 85mΩ
Output current: 1A
Number of channels: 2
Supply voltage: 2.7...5.5V DC
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AP130-35WG-7 AP130-35WG-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AEFB3590D3B5E143&compId=AP130.pdf?ci_sign=e87096ddb3381f24ed81b8ac4a01d9e0a087087c Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.5V; 0.3A; SC59; SMD
Mounting: SMD
Operating temperature: -40...85°C
Case: SC59
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Tolerance: ±2%
Output current: 0.3A
Voltage drop: 0.5V
Number of channels: 1
Input voltage: 2.7...5.5V
Output voltage: 3.5V
Kind of package: reel; tape
на замовлення 2259 шт:
термін постачання 21-30 дні (днів)
26+16.96 грн
35+11.51 грн
100+10.07 грн
500+9.51 грн
Мінімальне замовлення: 26
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APX803L20-31SA-7 DIODES INCORPORATED APX803L.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SOT23; Ch: 1
Integrated circuit features: manual reset; watchdog
Kind of RESET output: open drain
Mounting: SMD
Case: SOT23
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Operating temperature: -40...85°C
DC supply current: 2.5µA
Number of channels: 1
Active logical level: low
на замовлення 9000 шт:
термін постачання 21-30 дні (днів)
3000+7.92 грн
Мінімальне замовлення: 3000
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SBR10U200CT DIODES INCORPORATED SBR10U200CT_CTFP_CTB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 150A; TO220AB; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 150A
Case: TO220AB
Max. load current: 10A
Reverse recovery time: 30ns
Technology: SBR®
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SBR10U200CTB DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB90B41EDBABCCC19293F3C0C7&compId=SBR10U200.pdf?ci_sign=1f89f1cff93fab0de3c382f1771815df87cafc84 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SBR®; SMD; 200V; 10A; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 150A
Case: D2PAK
Technology: SBR®
Max. forward voltage: 0.88V
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SBR10U200CTFP DIODES INCORPORATED SBR10U200CT_CTFP_CTB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 150A; ITO220AB; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 150A
Case: ITO220AB
Max. load current: 10A
Reverse recovery time: 30ns
Technology: SBR®
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DDZ18C-7 DIODES INCORPORATED DDZ5V1B-DDZ43.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
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DDZ18CQ-7 DIODES INCORPORATED DDZ5V1B-DDZ43.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
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DDZ18CS-7 DIODES INCORPORATED ds30414.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 18V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 18V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
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DDZ18CSF-7 DIODES INCORPORATED ds31987.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
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S1MSWFM-7 DIODES INCORPORATED S1MSWFM.pdf Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
3000+5.85 грн
Мінімальне замовлення: 3000
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DMN2022UFDF-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986C8CF3B49C458BF&compId=DMN2022UFDF.pdf?ci_sign=1e90dc75cc769a3ddb5d31796de505dd9d7f0d57 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.2A; 0.42W; U-DFN2020-6; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.2A
Power dissipation: 0.42W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 50mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
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DMP1022UFDEQ-7 DIODES INCORPORATED DMP1022UFDEQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -9A; Idm: -90A; 1.3W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -90A
Drain-source voltage: -12V
Drain current: -9A
Gate charge: 42.6nC
On-state resistance: 0.16Ω
Power dissipation: 1.3W
Gate-source voltage: ±8V
Application: automotive industry
Kind of channel: enhancement
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DMP1022UFDF-13 DIODES INCORPORATED DMP1022UFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 13 inch reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -90A
Drain-source voltage: -12V
Drain current: -8.8A
Gate charge: 48.3nC
On-state resistance: 32mΩ
Power dissipation: 1.3W
Gate-source voltage: ±8V
Kind of channel: enhancement
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DMP1022UFDF-7 DIODES INCORPORATED DMP1022UFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -8.8A
Pulsed drain current: -90A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 48.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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SMBJ22CA-13-F SMBJ22CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMBJ22CAQ-13-F DIODES INCORPORATED ds40740.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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SMBJ22A-13-F SMBJ22A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ110CA-13-F SMAJ110CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 122÷135V; 2.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 110V
Breakdown voltage: 122...135V
Max. forward impulse current: 2.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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ZXT12N50DXTA DIODES INCORPORATED ZXT12N50DX.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 3A; 0.87W; MSOP8
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 0.87W
Case: MSOP8
Pulsed collector current: 10A
Current gain: 50...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 132MHz
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FZT851TA FZT851TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE799C55BF3D092E749&compId=FZT851.pdf?ci_sign=d516316d8afde0c6291d4ed6f83b381fdd99975f description Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 130MHz
на замовлення 1797 шт:
термін постачання 21-30 дні (днів)
8+60.25 грн
10+41.72 грн
13+33.09 грн
25+24.46 грн
50+20.94 грн
1000+18.54 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
FZT853TA FZT853TA DIODES INCORPORATED FZT853.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 130MHz
на замовлення 849 шт:
термін постачання 21-30 дні (днів)
10+46.48 грн
11+39.16 грн
25+36.69 грн
50+34.45 грн
100+32.13 грн
250+29.97 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
FZT649TA FZT649TA DIODES INCORPORATED FZT649.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 3A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 3A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150...240MHz
Pulsed collector current: 8A
Current gain: 15...300
на замовлення 839 шт:
термін постачання 21-30 дні (днів)
8+60.25 грн
12+33.49 грн
100+22.30 грн
250+19.34 грн
500+17.50 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
FZT491TA FZT491TA DIODES INCORPORATED FZT491.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
на замовлення 1003 шт:
термін постачання 21-30 дні (днів)
8+60.25 грн
11+37.33 грн
100+23.18 грн
500+20.78 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
FZT689BTA FZT689BTA DIODES INCORPORATED FZT689B.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 4A; 3W; SOT223
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Collector current: 4A
Power dissipation: 3W
Collector-emitter voltage: 20V
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Polarisation: bipolar
Type of transistor: NPN
на замовлення 24 шт:
термін постачання 21-30 дні (днів)
8+57.67 грн
9+46.36 грн
10+40.60 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
FZT491ATA FZT491ATA DIODES INCORPORATED FZT491A.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
на замовлення 138 шт:
термін постачання 21-30 дні (днів)
7+64.56 грн
11+36.93 грн
100+22.94 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
FZT694BTA FZT694BTA DIODES INCORPORATED FZT694B.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 1A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 1A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 130MHz
на замовлення 235 шт:
термін постачання 21-30 дні (днів)
6+80.05 грн
10+47.08 грн
100+31.49 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
FZT688BTA FZT688BTA DIODES INCORPORATED FZT688.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 4A; 3W; SOT223
Polarisation: bipolar
Case: SOT223
Mounting: SMD
Type of transistor: NPN
Power dissipation: 3W
Collector current: 4A
Collector-emitter voltage: 12V
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Kind of package: reel; tape
на замовлення 225 шт:
термін постачання 21-30 дні (днів)
7+70.58 грн
10+40.92 грн
100+26.70 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
FZT692BTA FZT692BTA DIODES INCORPORATED FZT692B.pdf description Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 70V; 2A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 70V
Collector current: 2A
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
на замовлення 288 шт:
термін постачання 21-30 дні (днів)
6+74.02 грн
10+48.44 грн
50+37.25 грн
100+33.49 грн
250+29.09 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
DPO2039DABQ-13 DIODES INCORPORATED DPO2039DABQ.pdf Category: Integrated circuits - others
Description: IC: power switch; U-QFN3030-16; reel,tape; 2.7÷5.5VDC
Supply voltage: 2.7...5.5V DC
Protection: anti-overvoltage OVP
Case: U-QFN3030-16
Kind of output: N-Channel
Type of integrated circuit: power switch
Kind of package: reel; tape
Mounting: SMD
Application: USB port ESD protection
Output current: 0.6A
Number of channels: 4
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SMBJ43A-13-F SMBJ43A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷54.9V; 8.6A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...54.9V
Max. forward impulse current: 8.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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74LVC2G07FW4-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E7109CB27700D3&compId=74LVC2G07.pdf?ci_sign=23197b584940eec3d9368591366361111cafb117 Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1010-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Technology: CMOS
Case: X2-DFN1010-6
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
Number of channels: 2
Kind of output: open drain
Kind of package: reel; tape
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74LVC2G07FW5-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E710656EA120D3&compId=74LVC2G07.pdf?ci_sign=5155758af5633312cfec558e7be0db6fb82a0b48 Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X1-DFN1010-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Technology: CMOS
Case: X1-DFN1010-6
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
Number of channels: 2
Kind of output: open drain
Kind of package: reel; tape
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74LVC2G07FX4-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E710656EA220D3&compId=74LVC2G07.pdf?ci_sign=70be2d5cfc1c205eb4a3bd4b1ce4248747e98641 Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1409-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Technology: CMOS
Case: X2-DFN1409-6
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
Number of channels: 2
Kind of output: open drain
Kind of package: reel; tape
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74LVC2G07FZ4-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E710E4871960D3&compId=74LVC2G07.pdf?ci_sign=0f7bb9eaf40fba2451f8b49263009f6eaa6fd347 Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Technology: CMOS
Case: X2-DFN1410-6
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
Number of channels: 2
Kind of output: open drain
Kind of package: reel; tape
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DMT68M8LFV-7 DIODES INCORPORATED DMT68M8LFV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43.3A; Idm: 210A; 2.7W
Mounting: SMD
Drain-source voltage: 60V
Kind of package: 7 inch reel; tape
Pulsed drain current: 210A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Polarisation: unipolar
Gate charge: 30nC
On-state resistance: 13.3mΩ
Power dissipation: 2.7W
Drain current: 43.3A
Gate-source voltage: ±20V
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DMT68M8LPS-13 DIODES INCORPORATED DMT68M8LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.2A; Idm: 270A; 2.4W
Mounting: SMD
Drain-source voltage: 60V
Kind of package: 13 inch reel; tape
Pulsed drain current: 270A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerDI5060-8
Polarisation: unipolar
Gate charge: 30nC
On-state resistance: 10.8mΩ
Power dissipation: 2.4W
Drain current: 11.2A
Gate-source voltage: ±20V
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DMT68M8LSS-13 DMT68M8LSS-13 DIODES INCORPORATED DMT68M8LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.7A; Idm: 100A; 1.9W; SO8
Mounting: SMD
Drain-source voltage: 60V
Kind of package: 13 inch reel; tape
Pulsed drain current: 100A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: SO8
Polarisation: unipolar
Gate charge: 31.8nC
On-state resistance: 12mΩ
Power dissipation: 1.9W
Drain current: 9.7A
Gate-source voltage: ±20V
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DDZ5V6BS-7 DIODES INCORPORATED ds30414.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
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SMAJ130CA-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ130CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 144÷159V; 1.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 130V
Breakdown voltage: 144...159V
Max. forward impulse current: 1.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMAJ13AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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ZVP2120GTA ZVP2120G.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -200mA; Idm: -1.2A; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -200mA
Pulsed drain current: -1.2A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 25Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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ZXM61P02FTA description pVersion=0046&contRep=ZT&docId=005056AB752F1EE799C35493BDBFC749&compId=ZXM61P02F.pdf?ci_sign=814b34e582b88c406996cb3999105ce2ce23f96d
ZXM61P02FTA
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.7A; 0.625W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -700mA
Power dissipation: 0.625W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2089 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+21.52 грн
29+14.23 грн
75+11.03 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
SMCJ5.0A-13-F SMCJ_ser.pdf
SMCJ5.0A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMCJ5.0AQ-13-F SMCJ5.0CAQ_SMCJ110CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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3.0SMCJ5.0A-13 3.0SMCJxx.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 6.4÷7.07V; 326.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 326.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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PSMAJ400A-13 PSMAJ400(C)A.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 380÷420V; 0.73A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 342V
Breakdown voltage: 380...420V
Max. forward impulse current: 0.73A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
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SBR60A200CT SBR60A200CT.pdf
SBR60A200CT
Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SBR®; THT; 200V; 30Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: THT
Max. off-state voltage: 200V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.96V
Max. forward impulse current: 250A
Kind of package: tube
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SMAJ45A-13-F SMAJ_ser.pdf
SMAJ45A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 50÷55.3V; 5.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Features of semiconductor devices: glass passivated
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P4SMAJ45ADF-13 P4SMAJ5.0ADF-P4SMAJ85ADF.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 50÷55.3V; 5.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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BAS40DW-05-7-F BAS40TW_DW-04_DW-05_DW-06_BRW.pdf
BAS40DW-05-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT363; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT363
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double x2
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
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BAS40DW-06-7-F BAS40TW_DW-04_DW-05_DW-06_BRW.pdf
BAS40DW-06-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT363; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT363
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double x2
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
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RS3AB-13-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BAEB10C9F74091BF&compId=RS3AB-13-F-DTE.pdf?ci_sign=6eb924a39f07a2c754fe478059a243413f21d103
RS3AB-13-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 3A; 150ns; SMB; Ufmax: 1.3V; Ifsm: 100A
Type of diode: rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 50pF
Max. forward impulse current: 100A
Reverse recovery time: 150ns
Kind of package: reel; tape
Max. forward voltage: 1.3V
на замовлення 1592 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+27.54 грн
28+14.55 грн
100+11.03 грн
250+9.75 грн
500+8.79 грн
1000+8.55 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
SMAJ11A-13-F SMAJ_ser.pdf
SMAJ11A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 12.2÷13.5V; 22A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 11V
Breakdown voltage: 12.2...13.5V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 4900 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
25+17.22 грн
31+13.27 грн
34+11.83 грн
40+10.07 грн
100+7.83 грн
500+5.91 грн
1000+5.28 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
ZLLS400TA ZLLS400.pdf
ZLLS400TA
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 0.52A; 3ns; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.52A
Semiconductor structure: single diode
Capacitance: 15pF
Max. forward voltage: 0.8V
Leakage current: 370µA
Max. forward impulse current: 12A
Reverse recovery time: 3ns
Kind of package: reel; tape
Power dissipation: 0.37W
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ZLLS400QTA ZLLS400Q.pdf
ZLLS400QTA
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 0.85A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.85A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 12A
Kind of package: reel; tape
Application: automotive industry
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ZLLS400QTC ZLLS400Q.pdf
ZLLS400QTC
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 0.52A; 3ns; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.52A
Semiconductor structure: single diode
Capacitance: 15pF
Max. forward voltage: 0.8V
Leakage current: 370µA
Max. forward impulse current: 12A
Reverse recovery time: 3ns
Kind of package: reel; tape
Power dissipation: 0.39W
Application: automotive industry
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DMP3008SFGQ-7 DMP3008SFGQ.pdf
DMP3008SFGQ-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.1A; 0.9W; PowerDI®3333-8
Case: PowerDI®3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Polarisation: unipolar
Drain-source voltage: -30V
Gate-source voltage: ±20V
Drain current: -7.1A
Kind of channel: enhancement
On-state resistance: 25mΩ
Power dissipation: 0.9W
Application: automotive industry
Type of transistor: P-MOSFET
на замовлення 3241 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+91.24 грн
10+59.07 грн
100+44.44 грн
500+36.05 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
74AHC1G08SE-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED88083479F93E24A18&compId=74AHC1G08.pdf?ci_sign=1a25f740889bc13d63a294564635e9ea9aee4f66
74AHC1G08SE-7
+1
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SOT353; 2÷5.5VDC; -40÷125°C; AHC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SOT353
Family: AHC
Kind of output: push-pull
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
на замовлення 55 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
55+7.19 грн
Мінімальне замовлення: 55
В кошику  од. на суму  грн.
AP2162ASG-13 AP2162A_72A.pdf
AP2162ASG-13
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 2; P-Channel; SMD
Mounting: SMD
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Kind of output: P-Channel
Type of integrated circuit: power switch
Kind of package: reel; tape
Case: SO8
On-state resistance: 85mΩ
Output current: 1A
Number of channels: 2
Supply voltage: 2.7...5.5V DC
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AP2162AFGEG-7 AP2162A_72A.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 2; P-Channel; SMD
Mounting: SMD
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Kind of output: P-Channel
Type of integrated circuit: power switch
Kind of package: reel; tape
Case: U-DFN3030-8
On-state resistance: 85mΩ
Output current: 1A
Number of channels: 2
Supply voltage: 2.7...5.5V DC
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AP130-35WG-7 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AEFB3590D3B5E143&compId=AP130.pdf?ci_sign=e87096ddb3381f24ed81b8ac4a01d9e0a087087c
AP130-35WG-7
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.5V; 0.3A; SC59; SMD
Mounting: SMD
Operating temperature: -40...85°C
Case: SC59
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Tolerance: ±2%
Output current: 0.3A
Voltage drop: 0.5V
Number of channels: 1
Input voltage: 2.7...5.5V
Output voltage: 3.5V
Kind of package: reel; tape
на замовлення 2259 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
26+16.96 грн
35+11.51 грн
100+10.07 грн
500+9.51 грн
Мінімальне замовлення: 26
В кошику  од. на суму  грн.
APX803L20-31SA-7 APX803L.pdf
Виробник: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SOT23; Ch: 1
Integrated circuit features: manual reset; watchdog
Kind of RESET output: open drain
Mounting: SMD
Case: SOT23
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Operating temperature: -40...85°C
DC supply current: 2.5µA
Number of channels: 1
Active logical level: low
на замовлення 9000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+7.92 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SBR10U200CT SBR10U200CT_CTFP_CTB.pdf
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 150A; TO220AB; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 150A
Case: TO220AB
Max. load current: 10A
Reverse recovery time: 30ns
Technology: SBR®
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SBR10U200CTB pVersion=0046&contRep=ZT&docId=005056AB90B41EDBABCCC19293F3C0C7&compId=SBR10U200.pdf?ci_sign=1f89f1cff93fab0de3c382f1771815df87cafc84
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SBR®; SMD; 200V; 10A; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 150A
Case: D2PAK
Technology: SBR®
Max. forward voltage: 0.88V
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SBR10U200CTFP SBR10U200CT_CTFP_CTB.pdf
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 150A; ITO220AB; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 150A
Case: ITO220AB
Max. load current: 10A
Reverse recovery time: 30ns
Technology: SBR®
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DDZ18C-7 DDZ5V1B-DDZ43.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
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DDZ18CQ-7 DDZ5V1B-DDZ43.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
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DDZ18CS-7 ds30414.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 18V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 18V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
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DDZ18CSF-7 ds31987.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
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S1MSWFM-7 S1MSWFM.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+5.85 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DMN2022UFDF-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986C8CF3B49C458BF&compId=DMN2022UFDF.pdf?ci_sign=1e90dc75cc769a3ddb5d31796de505dd9d7f0d57
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.2A; 0.42W; U-DFN2020-6; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.2A
Power dissipation: 0.42W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 50mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
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DMP1022UFDEQ-7 DMP1022UFDEQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -9A; Idm: -90A; 1.3W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -90A
Drain-source voltage: -12V
Drain current: -9A
Gate charge: 42.6nC
On-state resistance: 0.16Ω
Power dissipation: 1.3W
Gate-source voltage: ±8V
Application: automotive industry
Kind of channel: enhancement
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DMP1022UFDF-13 DMP1022UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 13 inch reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -90A
Drain-source voltage: -12V
Drain current: -8.8A
Gate charge: 48.3nC
On-state resistance: 32mΩ
Power dissipation: 1.3W
Gate-source voltage: ±8V
Kind of channel: enhancement
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DMP1022UFDF-7 DMP1022UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -8.8A
Pulsed drain current: -90A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 48.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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SMBJ22CA-13-F SMBJ_ser.pdf
SMBJ22CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMBJ22CAQ-13-F ds40740.pdf
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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SMBJ22A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ22A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ110CA-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ110CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 122÷135V; 2.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 110V
Breakdown voltage: 122...135V
Max. forward impulse current: 2.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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ZXT12N50DXTA ZXT12N50DX.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 3A; 0.87W; MSOP8
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 0.87W
Case: MSOP8
Pulsed collector current: 10A
Current gain: 50...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 132MHz
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FZT851TA description pVersion=0046&contRep=ZT&docId=005056AB752F1EE799C55BF3D092E749&compId=FZT851.pdf?ci_sign=d516316d8afde0c6291d4ed6f83b381fdd99975f
FZT851TA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 130MHz
на замовлення 1797 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+60.25 грн
10+41.72 грн
13+33.09 грн
25+24.46 грн
50+20.94 грн
1000+18.54 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
FZT853TA FZT853.pdf
FZT853TA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 130MHz
на замовлення 849 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+46.48 грн
11+39.16 грн
25+36.69 грн
50+34.45 грн
100+32.13 грн
250+29.97 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
FZT649TA FZT649.pdf
FZT649TA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 3A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 3A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150...240MHz
Pulsed collector current: 8A
Current gain: 15...300
на замовлення 839 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+60.25 грн
12+33.49 грн
100+22.30 грн
250+19.34 грн
500+17.50 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
FZT491TA FZT491.pdf
FZT491TA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
на замовлення 1003 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+60.25 грн
11+37.33 грн
100+23.18 грн
500+20.78 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
FZT689BTA FZT689B.pdf
FZT689BTA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 4A; 3W; SOT223
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Collector current: 4A
Power dissipation: 3W
Collector-emitter voltage: 20V
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Polarisation: bipolar
Type of transistor: NPN
на замовлення 24 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+57.67 грн
9+46.36 грн
10+40.60 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
FZT491ATA FZT491A.pdf
FZT491ATA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
на замовлення 138 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+64.56 грн
11+36.93 грн
100+22.94 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
FZT694BTA FZT694B.pdf
FZT694BTA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 1A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 1A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 130MHz
на замовлення 235 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+80.05 грн
10+47.08 грн
100+31.49 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
FZT688BTA FZT688.pdf
FZT688BTA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 4A; 3W; SOT223
Polarisation: bipolar
Case: SOT223
Mounting: SMD
Type of transistor: NPN
Power dissipation: 3W
Collector current: 4A
Collector-emitter voltage: 12V
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Kind of package: reel; tape
на замовлення 225 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+70.58 грн
10+40.92 грн
100+26.70 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
FZT692BTA description FZT692B.pdf
FZT692BTA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 70V; 2A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 70V
Collector current: 2A
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
на замовлення 288 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+74.02 грн
10+48.44 грн
50+37.25 грн
100+33.49 грн
250+29.09 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
DPO2039DABQ-13 DPO2039DABQ.pdf
Виробник: DIODES INCORPORATED
Category: Integrated circuits - others
Description: IC: power switch; U-QFN3030-16; reel,tape; 2.7÷5.5VDC
Supply voltage: 2.7...5.5V DC
Protection: anti-overvoltage OVP
Case: U-QFN3030-16
Kind of output: N-Channel
Type of integrated circuit: power switch
Kind of package: reel; tape
Mounting: SMD
Application: USB port ESD protection
Output current: 0.6A
Number of channels: 4
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SMBJ43A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ43A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷54.9V; 8.6A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...54.9V
Max. forward impulse current: 8.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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74LVC2G07FW4-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E7109CB27700D3&compId=74LVC2G07.pdf?ci_sign=23197b584940eec3d9368591366361111cafb117
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1010-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Technology: CMOS
Case: X2-DFN1010-6
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
Number of channels: 2
Kind of output: open drain
Kind of package: reel; tape
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74LVC2G07FW5-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E710656EA120D3&compId=74LVC2G07.pdf?ci_sign=5155758af5633312cfec558e7be0db6fb82a0b48
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X1-DFN1010-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Technology: CMOS
Case: X1-DFN1010-6
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
Number of channels: 2
Kind of output: open drain
Kind of package: reel; tape
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74LVC2G07FX4-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E710656EA220D3&compId=74LVC2G07.pdf?ci_sign=70be2d5cfc1c205eb4a3bd4b1ce4248747e98641
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1409-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Technology: CMOS
Case: X2-DFN1409-6
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
Number of channels: 2
Kind of output: open drain
Kind of package: reel; tape
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74LVC2G07FZ4-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E710E4871960D3&compId=74LVC2G07.pdf?ci_sign=0f7bb9eaf40fba2451f8b49263009f6eaa6fd347
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Technology: CMOS
Case: X2-DFN1410-6
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
Number of channels: 2
Kind of output: open drain
Kind of package: reel; tape
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DMT68M8LFV-7 DMT68M8LFV.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43.3A; Idm: 210A; 2.7W
Mounting: SMD
Drain-source voltage: 60V
Kind of package: 7 inch reel; tape
Pulsed drain current: 210A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Polarisation: unipolar
Gate charge: 30nC
On-state resistance: 13.3mΩ
Power dissipation: 2.7W
Drain current: 43.3A
Gate-source voltage: ±20V
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DMT68M8LPS-13 DMT68M8LPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.2A; Idm: 270A; 2.4W
Mounting: SMD
Drain-source voltage: 60V
Kind of package: 13 inch reel; tape
Pulsed drain current: 270A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerDI5060-8
Polarisation: unipolar
Gate charge: 30nC
On-state resistance: 10.8mΩ
Power dissipation: 2.4W
Drain current: 11.2A
Gate-source voltage: ±20V
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DMT68M8LSS-13 DMT68M8LSS.pdf
DMT68M8LSS-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.7A; Idm: 100A; 1.9W; SO8
Mounting: SMD
Drain-source voltage: 60V
Kind of package: 13 inch reel; tape
Pulsed drain current: 100A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: SO8
Polarisation: unipolar
Gate charge: 31.8nC
On-state resistance: 12mΩ
Power dissipation: 1.9W
Drain current: 9.7A
Gate-source voltage: ±20V
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DDZ5V6BS-7 ds30414.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
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