Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (78532) > Сторінка 653 з 1309
Фото | Назва | Виробник | Інформація |
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BZT52C39LP-7B | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Tolerance: ±5.13% Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 39 V Impedance (Max) (Zzt): 130 Ohms Supplier Device Package: X1-DFN1006-2 Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 27.3 V |
на замовлення 1110000 шт: термін постачання 21-31 дні (днів) |
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BZT52HC8V2WFQ-7 | Diodes Incorporated |
![]() Packaging: Bulk Tolerance: ±6.04% Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: SOD-123F Grade: Automotive Power - Max: 375 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 700 nA @ 5 V Qualification: AEC-Q101 |
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MMSZ5229BQ-7-F | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 4.3 V Impedance (Max) (Zzt): 22 Ohms Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 370 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V Qualification: AEC-Q101 |
на замовлення 69000 шт: термін постачання 21-31 дні (днів) |
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SMCJ6.5CA-13-F | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 133.9A Voltage - Reverse Standoff (Typ): 6.5V Supplier Device Package: SMC Bidirectional Channels: 1 Voltage - Breakdown (Min): 7.22V Voltage - Clamping (Max) @ Ipp: 11.2V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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SMCJ6.5CA-13-F | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 133.9A Voltage - Reverse Standoff (Typ): 6.5V Supplier Device Package: SMC Bidirectional Channels: 1 Voltage - Breakdown (Min): 7.22V Voltage - Clamping (Max) @ Ipp: 11.2V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
на замовлення 26690 шт: термін постачання 21-31 дні (днів) |
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SBR15U30SP5-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 15A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 15 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V |
на замовлення 115000 шт: термін постачання 21-31 дні (днів) |
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SBR15U30SP5-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 15A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 15 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V |
на замовлення 118497 шт: термін постачання 21-31 дні (днів) |
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SBR15U30SP5Q-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Capacitance @ Vr, F: 400pF @ 30V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 15 A Current - Reverse Leakage @ Vr: 300 µA @ 30 V Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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DMN65D8LT-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 210mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 115mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-523 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 25 V |
на замовлення 138848 шт: термін постачання 21-31 дні (днів) |
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DMN63D1LT-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Power Dissipation (Max): 330mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: SOT-523 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 392 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V |
на замовлення 160000 шт: термін постачання 21-31 дні (днів) |
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DMN63D1LT-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Power Dissipation (Max): 330mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: SOT-523 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 392 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V |
на замовлення 169523 шт: термін постачання 21-31 дні (днів) |
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PDU620CT-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 3A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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PDU620CT-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 3A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 24350 шт: термін постачання 21-31 дні (днів) |
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DMN601LT-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 356mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 200mA, 10V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-523 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
S1614E-25.0000(T) | Diodes Incorporated |
Description: CLOCK SAW OSCILLATOR SEAM7050 T& Packaging: Tape & Reel (TR) Type: XO (Standard) Base Resonator: Crystal |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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FMMT614QTA | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 500mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15000 @ 100mA, 5V Supplier Device Package: SOT-23-3 Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 500 mW Qualification: AEC-Q101 |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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FMMT614QTA | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 500mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15000 @ 100mA, 5V Supplier Device Package: SOT-23-3 Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 500 mW Qualification: AEC-Q101 |
на замовлення 14977 шт: термін постачання 21-31 дні (днів) |
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AL17052V5W5-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 50mA Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Positive Voltage - Input (Max): 6.5V Topology: Buck Supplier Device Package: SOT-25 Synchronous Rectifier: No Voltage - Input (Min): 2.7V Voltage - Output (Min/Fixed): 5V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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AL17052V5W5-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 50mA Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Positive Voltage - Input (Max): 6.5V Topology: Buck Supplier Device Package: SOT-25 Synchronous Rectifier: No Voltage - Input (Min): 2.7V Voltage - Output (Min/Fixed): 5V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PI6CG33202CZDIEX-13R | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 24-VFQFN Exposed Pad Mounting Type: Surface Mount Output: HCSL Frequency - Max: 100MHz Type: Clock Generator Input: CMOS, Crystal Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3.135V ~ 3.465V Ratio - Input:Output: 1:2 Differential - Input:Output: No/Yes Supplier Device Package: 24-TQFN (4x4) PLL: Yes Divider/Multiplier: No/No Number of Circuits: 1 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PI6CG33202CZDIEX-13R | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 24-VFQFN Exposed Pad Mounting Type: Surface Mount Output: HCSL Frequency - Max: 100MHz Type: Clock Generator Input: CMOS, Crystal Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3.135V ~ 3.465V Ratio - Input:Output: 1:2 Differential - Input:Output: No/Yes Supplier Device Package: 24-TQFN (4x4) PLL: Yes Divider/Multiplier: No/No Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 2730 шт: термін постачання 21-31 дні (днів) |
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MMSZ5241BQ-7-F | Diodes Incorporated |
![]() Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 11 V Impedance (Max) (Zzt): 22 Ohms Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 370 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V Qualification: AEC-Q101 |
на замовлення 336000 шт: термін постачання 21-31 дні (днів) |
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DDZ9717-7-79 | Diodes Incorporated |
Description: DIODE ZENER 43V 500MW SOD123 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 43 V Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 32.6 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SBR140S1FQ-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Capacitance @ Vr, F: 110pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 1 A Current - Reverse Leakage @ Vr: 100 µA @ 40 V Qualification: AEC-Q101 |
на замовлення 4686000 шт: термін постачання 21-31 дні (днів) |
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DMT8008LFG-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V Power Dissipation (Max): 1W (Ta), 23.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 37.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2254 pF @ 40 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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DMT8008LFG-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V Power Dissipation (Max): 1W (Ta), 23.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 37.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2254 pF @ 40 V |
на замовлення 10980 шт: термін постачання 21-31 дні (днів) |
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DMTH8008LPS-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 91A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V Power Dissipation (Max): 1.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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DMT8008LPS-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 83A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V Power Dissipation (Max): 1.3W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMTH8008SFG-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V Power Dissipation (Max): 1.2W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 31.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMTH8008SFG-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V Power Dissipation (Max): 1.2W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 31.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMT8008LK3-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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DMT8008SK3-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMTH8008SFGQ-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V Power Dissipation (Max): 1.2W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: PowerDI3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 31.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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DMTH8008SFGQ-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V Power Dissipation (Max): 1.2W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: PowerDI3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 31.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 48000 шт: термін постачання 21-31 дні (днів) |
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DMT8008SCT | Diodes Incorporated |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 111A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V Power Dissipation (Max): 2.4W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V |
на замовлення 8350 шт: термін постачання 21-31 дні (днів) |
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DMN6070SY-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 2.5A, 10V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-89-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 588 pF @ 30 V |
на замовлення 60000 шт: термін постачання 21-31 дні (днів) |
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DMN6070SY-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 2.5A, 10V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-89-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 588 pF @ 30 V |
на замовлення 61392 шт: термін постачання 21-31 дні (днів) |
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DSL12AW-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 290mV @ 20mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 800mA, 1.5 V Frequency - Transition: 180MHz Supplier Device Package: SOT-363 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 450 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
DMTH10H017LPD-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.6W (Ta), 93W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type E) |
на замовлення 212500 шт: термін постачання 21-31 дні (днів) |
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DMTH10H017LPD-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.6W (Ta), 93W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type E) |
на замовлення 214744 шт: термін постачання 21-31 дні (днів) |
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PI3L2500ZHEX | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 42-VFQFN Exposed Pad Mounting Type: Surface Mount Applications: Telecommunications -3db Bandwidth: 3GHz Supplier Device Package: 42-TQFN (9x3.5) Voltage - Supply, Single (V+): 3V ~ 3.6V Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Channels: 8 |
на замовлення 10500 шт: термін постачання 21-31 дні (днів) |
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PI3L2500ZHEX | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 42-VFQFN Exposed Pad Mounting Type: Surface Mount Applications: Telecommunications -3db Bandwidth: 3GHz Supplier Device Package: 42-TQFN (9x3.5) Voltage - Supply, Single (V+): 3V ~ 3.6V Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Channels: 8 |
на замовлення 22144 шт: термін постачання 21-31 дні (днів) |
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PI3EQX1204-CZHEX | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 42-VFQFN Exposed Pad Number of Channels: 4 Mounting Type: Surface Mount Output: CML Type: Buffer, ReDriver Input: CML Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V Applications: SAS, SATA Data Rate (Max): 12.5Gbps Supplier Device Package: 42-TQFN (9x3.5) Signal Conditioning: Input Equalization |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PI3EQX1204-CZHEX | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 42-VFQFN Exposed Pad Number of Channels: 4 Mounting Type: Surface Mount Output: CML Type: Buffer, ReDriver Input: CML Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V Applications: SAS, SATA Data Rate (Max): 12.5Gbps Supplier Device Package: 42-TQFN (9x3.5) Signal Conditioning: Input Equalization |
на замовлення 2992 шт: термін постачання 21-31 дні (днів) |
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AP33771CFBZ-13-FA01 | Diodes Incorporated |
Description: USB EXT POWER RANGE W-DFN3030-14 Packaging: Tape & Reel (TR) Package / Case: 14-WFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 3.3V ~ 31V Applications: USB, Type-C Controller Current - Supply: 3.3mA Supplier Device Package: W-DFN3030-14 (Type A1) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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ADTC124ECAQ-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Supplier Device Package: SOT-23-3 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 310 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ADTC124ECAQ-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Supplier Device Package: SOT-23-3 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 310 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 9390 шт: термін постачання 21-31 дні (днів) |
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FZT560QTA | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V Frequency - Transition: 60MHz Supplier Device Package: SOT-223 Grade: Automotive Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 500 V Power - Max: 2 W Qualification: AEC-Q101 |
на замовлення 43000 шт: термін постачання 21-31 дні (днів) |
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FZT560QTA | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V Frequency - Transition: 60MHz Supplier Device Package: SOT-223 Grade: Automotive Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 500 V Power - Max: 2 W Qualification: AEC-Q101 |
на замовлення 43000 шт: термін постачання 21-31 дні (днів) |
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FZT560QTC | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V Frequency - Transition: 60MHz Supplier Device Package: SOT-223 Grade: Automotive Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 500 V Power - Max: 2 W Qualification: AEC-Q101 |
на замовлення 248000 шт: термін постачання 21-31 дні (днів) |
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74HCT32S14-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 4mA, 4mA Number of Inputs: 2 Supplier Device Package: 14-SO Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 24ns @ 4.5V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 20 µA |
на замовлення 22500 шт: термін постачання 21-31 дні (днів) |
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74HCT32S14-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 4mA, 4mA Number of Inputs: 2 Supplier Device Package: 14-SO Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 24ns @ 4.5V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 20 µA |
на замовлення 22500 шт: термін постачання 21-31 дні (днів) |
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APX324TSG-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 340µA (x4 Channels) Slew Rate: 1V/µs Gain Bandwidth Product: 1 MHz Current - Input Bias: 10 nA Voltage - Input Offset: 1.7 mV Supplier Device Package: 14-TSSOP Number of Circuits: 4 Current - Output / Channel: 90 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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APX324TSG-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 340µA (x4 Channels) Slew Rate: 1V/µs Gain Bandwidth Product: 1 MHz Current - Input Bias: 10 nA Voltage - Input Offset: 1.7 mV Supplier Device Package: 14-TSSOP Number of Circuits: 4 Current - Output / Channel: 90 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V |
на замовлення 2465 шт: термін постачання 21-31 дні (днів) |
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SDT10100P5-13D | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A Current - Reverse Leakage @ Vr: 80 µA @ 100 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SDT10100P5-13D | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A Current - Reverse Leakage @ Vr: 80 µA @ 100 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SDT10100P5-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A Current - Reverse Leakage @ Vr: 80 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SDT10100P5-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A Current - Reverse Leakage @ Vr: 80 µA @ 100 V |
на замовлення 4880 шт: термін постачання 21-31 дні (днів) |
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MBR750 | Diodes Incorporated |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 400pF @ 4V, 1MHz Current - Average Rectified (Io): 7.5A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A Current - Reverse Leakage @ Vr: 500 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AP2127N-1.5TRG1 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 90 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: SOT-23-3 Voltage - Output (Min/Fixed): 1.5V PSRR: 68dB ~ 54dB (100Hz ~ 10kHz) Voltage Dropout (Max): 1V @ 300mA Protection Features: Over Current, Over Temperature |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BZT52C39LP-7B |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 39V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5.13%
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: X1-DFN1006-2
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27.3 V
Description: DIODE ZENER 39V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5.13%
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: X1-DFN1006-2
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27.3 V
на замовлення 1110000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
12+ | 27.47 грн |
17+ | 17.99 грн |
100+ | 8.78 грн |
500+ | 6.88 грн |
1000+ | 4.78 грн |
2000+ | 4.14 грн |
5000+ | 3.78 грн |
BZT52HC8V2WFQ-7 |
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Виробник: Diodes Incorporated
Description: Zener Diode SOD123F T&R 3K
Packaging: Bulk
Tolerance: ±6.04%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123F
Grade: Automotive
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Qualification: AEC-Q101
Description: Zener Diode SOD123F T&R 3K
Packaging: Bulk
Tolerance: ±6.04%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123F
Grade: Automotive
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
MMSZ5229BQ-7-F |
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Виробник: Diodes Incorporated
Description: ZENER DIODE SOD123 T&R 3K
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
Description: ZENER DIODE SOD123 T&R 3K
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
на замовлення 69000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
22+ | 14.91 грн |
31+ | 9.90 грн |
100+ | 4.80 грн |
500+ | 3.76 грн |
1000+ | 2.61 грн |
SMCJ6.5CA-13-F |
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Виробник: Diodes Incorporated
Description: TVS DIODE 6.5VWM 11.2VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 133.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 6.5VWM 11.2VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 133.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 37.68 грн |
6000+ | 14.41 грн |
15000+ | 13.73 грн |
SMCJ6.5CA-13-F |
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Виробник: Diodes Incorporated
Description: TVS DIODE 6.5VWM 11.2VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 133.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 6.5VWM 11.2VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 133.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 26690 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 40.82 грн |
10+ | 37.04 грн |
100+ | 36.28 грн |
500+ | 19.63 грн |
1000+ | 17.74 грн |
SBR15U30SP5-13 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 30V 15A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 15A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Description: DIODE SBR 30V 15A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 15A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
на замовлення 115000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 17.63 грн |
SBR15U30SP5-13 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 30V 15A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 15A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Description: DIODE SBR 30V 15A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 15A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
на замовлення 118497 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 51.81 грн |
10+ | 43.24 грн |
100+ | 29.94 грн |
500+ | 23.48 грн |
1000+ | 19.98 грн |
2000+ | 17.80 грн |
SBR15U30SP5Q-13 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 30V 15A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Capacitance @ Vr, F: 400pF @ 30V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Qualification: AEC-Q101
Description: DIODE SBR 30V 15A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Capacitance @ Vr, F: 400pF @ 30V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 24.50 грн |
DMN65D8LT-13 |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT523 T&R
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 115mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 25 V
Description: MOSFET BVDSS: 41V~60V SOT523 T&R
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 115mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 25 V
на замовлення 138848 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
27+ | 11.77 грн |
44+ | 7.03 грн |
100+ | 3.17 грн |
500+ | 2.89 грн |
1000+ | 2.53 грн |
2000+ | 2.35 грн |
5000+ | 2.14 грн |
DMN63D1LT-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 320MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 330mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 392 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V
Description: MOSFET N-CH 60V 320MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 330mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 392 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V
на замовлення 160000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10000+ | 8.47 грн |
20000+ | 8.09 грн |
30000+ | 8.07 грн |
50000+ | 7.55 грн |
DMN63D1LT-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 320MA SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 330mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 392 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V
Description: MOSFET N-CH 60V 320MA SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 330mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 392 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V
на замовлення 169523 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9+ | 36.89 грн |
13+ | 23.51 грн |
100+ | 12.50 грн |
500+ | 11.25 грн |
1000+ | 9.94 грн |
2000+ | 9.46 грн |
5000+ | 8.82 грн |
PDU620CT-13 |
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Виробник: Diodes Incorporated
Description: DIODE ARRAY GP 200V 3A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE ARRAY GP 200V 3A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 39.29 грн |
PDU620CT-13 |
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Виробник: Diodes Incorporated
Description: DIODE ARRAY GP 200V 3A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE ARRAY GP 200V 3A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 24350 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 102.83 грн |
10+ | 76.42 грн |
100+ | 58.11 грн |
500+ | 43.44 грн |
1000+ | 37.45 грн |
2000+ | 37.18 грн |
DMN601LT-13 |
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Виробник: Diodes Incorporated
Description: 2N7002 FAMILY SOT523 T&R 10K
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 356mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 200mA, 10V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V
Description: 2N7002 FAMILY SOT523 T&R 10K
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 356mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 200mA, 10V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
S1614E-25.0000(T) |
Виробник: Diodes Incorporated
Description: CLOCK SAW OSCILLATOR SEAM7050 T&
Packaging: Tape & Reel (TR)
Type: XO (Standard)
Base Resonator: Crystal
Description: CLOCK SAW OSCILLATOR SEAM7050 T&
Packaging: Tape & Reel (TR)
Type: XO (Standard)
Base Resonator: Crystal
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 85.06 грн |
FMMT614QTA |
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Виробник: Diodes Incorporated
Description: TRANS NPN DARL 100V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 500mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15000 @ 100mA, 5V
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
Qualification: AEC-Q101
Description: TRANS NPN DARL 100V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 500mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15000 @ 100mA, 5V
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
Qualification: AEC-Q101
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 14.57 грн |
6000+ | 12.88 грн |
9000+ | 12.29 грн |
FMMT614QTA |
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Виробник: Diodes Incorporated
Description: TRANS NPN DARL 100V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 500mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15000 @ 100mA, 5V
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
Qualification: AEC-Q101
Description: TRANS NPN DARL 100V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 500mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15000 @ 100mA, 5V
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
Qualification: AEC-Q101
на замовлення 14977 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 61.23 грн |
10+ | 36.66 грн |
100+ | 23.70 грн |
500+ | 17.00 грн |
1000+ | 15.31 грн |
AL17052V5W5-7 |
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Виробник: Diodes Incorporated
Description: LED OFFLINE DRIVER SOT25 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 50mA
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Voltage - Input (Max): 6.5V
Topology: Buck
Supplier Device Package: SOT-25
Synchronous Rectifier: No
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 5V
Description: LED OFFLINE DRIVER SOT25 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 50mA
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Voltage - Input (Max): 6.5V
Topology: Buck
Supplier Device Package: SOT-25
Synchronous Rectifier: No
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 5V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 10.79 грн |
AL17052V5W5-7 |
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Виробник: Diodes Incorporated
Description: LED OFFLINE DRIVER SOT25 T&R 3K
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 50mA
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Voltage - Input (Max): 6.5V
Topology: Buck
Supplier Device Package: SOT-25
Synchronous Rectifier: No
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 5V
Description: LED OFFLINE DRIVER SOT25 T&R 3K
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 50mA
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Voltage - Input (Max): 6.5V
Topology: Buck
Supplier Device Package: SOT-25
Synchronous Rectifier: No
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 5V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 46.31 грн |
12+ | 27.36 грн |
25+ | 22.77 грн |
100+ | 16.46 грн |
250+ | 14.04 грн |
500+ | 12.55 грн |
1000+ | 11.12 грн |
PI6CG33202CZDIEX-13R |
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Виробник: Diodes Incorporated
Description: IC CLOCK GENERATOR 24TQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: HCSL
Frequency - Max: 100MHz
Type: Clock Generator
Input: CMOS, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/Yes
Supplier Device Package: 24-TQFN (4x4)
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLOCK GENERATOR 24TQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: HCSL
Frequency - Max: 100MHz
Type: Clock Generator
Input: CMOS, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/Yes
Supplier Device Package: 24-TQFN (4x4)
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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PI6CG33202CZDIEX-13R |
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Виробник: Diodes Incorporated
Description: IC CLOCK GENERATOR 24TQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: HCSL
Frequency - Max: 100MHz
Type: Clock Generator
Input: CMOS, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/Yes
Supplier Device Package: 24-TQFN (4x4)
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLOCK GENERATOR 24TQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: HCSL
Frequency - Max: 100MHz
Type: Clock Generator
Input: CMOS, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/Yes
Supplier Device Package: 24-TQFN (4x4)
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 2730 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 407.40 грн |
10+ | 256.78 грн |
25+ | 221.45 грн |
100+ | 170.32 грн |
250+ | 151.91 грн |
500+ | 140.59 грн |
1000+ | 133.05 грн |
MMSZ5241BQ-7-F |
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Виробник: Diodes Incorporated
Description: ZENER DIODE SOD123 T&R 3K
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Qualification: AEC-Q101
Description: ZENER DIODE SOD123 T&R 3K
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Qualification: AEC-Q101
на замовлення 336000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
22+ | 14.91 грн |
31+ | 10.05 грн |
100+ | 5.43 грн |
500+ | 4.01 грн |
1000+ | 2.78 грн |
DDZ9717-7-79 |
Виробник: Diodes Incorporated
Description: DIODE ZENER 43V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 32.6 V
Qualification: AEC-Q101
Description: DIODE ZENER 43V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 32.6 V
Qualification: AEC-Q101
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SBR140S1FQ-7 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 40V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE SBR 40V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
на замовлення 4686000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 7.47 грн |
6000+ | 6.87 грн |
9000+ | 6.69 грн |
15000+ | 6.26 грн |
21000+ | 6.09 грн |
30000+ | 5.87 грн |
DMT8008LFG-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 80V 16A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V
Power Dissipation (Max): 1W (Ta), 23.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 37.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2254 pF @ 40 V
Description: MOSFET N-CH 80V 16A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V
Power Dissipation (Max): 1W (Ta), 23.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 37.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2254 pF @ 40 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2000+ | 41.96 грн |
4000+ | 37.68 грн |
DMT8008LFG-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 80V 16A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V
Power Dissipation (Max): 1W (Ta), 23.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 37.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2254 pF @ 40 V
Description: MOSFET N-CH 80V 16A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V
Power Dissipation (Max): 1W (Ta), 23.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 37.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2254 pF @ 40 V
на замовлення 10980 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 145.22 грн |
10+ | 89.04 грн |
100+ | 60.14 грн |
500+ | 44.81 грн |
1000+ | 41.07 грн |
DMTH8008LPS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 80V 91A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V
Power Dissipation (Max): 1.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V
Description: MOSFET N-CH 80V 91A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V
Power Dissipation (Max): 1.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 25.75 грн |
DMT8008LPS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 80V 83A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V
Power Dissipation (Max): 1.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V
Description: MOSFET N-CH 80V 83A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V
Power Dissipation (Max): 1.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V
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DMTH8008SFG-13 |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Power Dissipation (Max): 1.2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 31.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 40 V
Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Power Dissipation (Max): 1.2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 31.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 40 V
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DMTH8008SFG-7 |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Power Dissipation (Max): 1.2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 31.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 40 V
Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Power Dissipation (Max): 1.2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 31.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 40 V
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DMT8008LK3-13 |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V
Description: MOSFET BVDSS: 61V~100V TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 34.48 грн |
DMT8008SK3-13 |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
Description: MOSFET BVDSS: 61V~100V TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
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DMTH8008SFGQ-13 |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Power Dissipation (Max): 1.2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 31.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Power Dissipation (Max): 1.2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 31.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 40 V
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 36.20 грн |
DMTH8008SFGQ-7 |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Power Dissipation (Max): 1.2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 31.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Power Dissipation (Max): 1.2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 31.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 40 V
Qualification: AEC-Q101
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2000+ | 36.20 грн |
DMT8008SCT |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V TO220AB T
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.4W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
Description: MOSFET BVDSS: 61V~100V TO220AB T
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.4W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
на замовлення 8350 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
50+ | 66.99 грн |
DMN6070SY-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 4.1A SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.5A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-89-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 588 pF @ 30 V
Description: MOSFET N-CH 60V 4.1A SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.5A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-89-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 588 pF @ 30 V
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 9.84 грн |
5000+ | 8.63 грн |
7500+ | 8.20 грн |
12500+ | 7.23 грн |
17500+ | 6.96 грн |
25000+ | 6.70 грн |
DMN6070SY-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 4.1A SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.5A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-89-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 588 pF @ 30 V
Description: MOSFET N-CH 60V 4.1A SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.5A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-89-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 588 pF @ 30 V
на замовлення 61392 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 41.60 грн |
13+ | 25.10 грн |
100+ | 16.04 грн |
500+ | 11.37 грн |
1000+ | 10.18 грн |
DSL12AW-7 |
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Виробник: Diodes Incorporated
Description: TRANS PNP 12V 2A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 290mV @ 20mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 800mA, 1.5 V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-363
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 450 mW
Description: TRANS PNP 12V 2A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 290mV @ 20mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 800mA, 1.5 V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-363
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 450 mW
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В кошику
од. на суму грн.
DMTH10H017LPD-13 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 100V 59A POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 93W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type E)
Description: MOSFET 2N-CH 100V 59A POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 93W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type E)
на замовлення 212500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 43.36 грн |
5000+ | 39.76 грн |
12500+ | 39.01 грн |
DMTH10H017LPD-13 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 100V 59A POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 93W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type E)
Description: MOSFET 2N-CH 100V 59A POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 93W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type E)
на замовлення 214744 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 104.40 грн |
10+ | 82.62 грн |
100+ | 64.24 грн |
500+ | 51.10 грн |
1000+ | 41.62 грн |
PI3L2500ZHEX |
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Виробник: Diodes Incorporated
Description: IC LAN SWITCH V-QFN3590-42
Packaging: Tape & Reel (TR)
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Applications: Telecommunications
-3db Bandwidth: 3GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 8
Description: IC LAN SWITCH V-QFN3590-42
Packaging: Tape & Reel (TR)
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Applications: Telecommunications
-3db Bandwidth: 3GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 8
на замовлення 10500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3500+ | 81.95 грн |
PI3L2500ZHEX |
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Виробник: Diodes Incorporated
Description: IC LAN SWITCH V-QFN3590-42
Packaging: Cut Tape (CT)
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Applications: Telecommunications
-3db Bandwidth: 3GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 8
Description: IC LAN SWITCH V-QFN3590-42
Packaging: Cut Tape (CT)
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Applications: Telecommunications
-3db Bandwidth: 3GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 8
на замовлення 22144 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 258.26 грн |
10+ | 159.42 грн |
25+ | 136.18 грн |
100+ | 103.09 грн |
250+ | 90.95 грн |
500+ | 83.49 грн |
1000+ | 75.97 грн |
PI3EQX1204-CZHEX |
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Виробник: Diodes Incorporated
Description: IC REDRIVER SAS3 12.5GBPS 42TQFN
Packaging: Tape & Reel (TR)
Package / Case: 42-VFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Applications: SAS, SATA
Data Rate (Max): 12.5Gbps
Supplier Device Package: 42-TQFN (9x3.5)
Signal Conditioning: Input Equalization
Description: IC REDRIVER SAS3 12.5GBPS 42TQFN
Packaging: Tape & Reel (TR)
Package / Case: 42-VFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Applications: SAS, SATA
Data Rate (Max): 12.5Gbps
Supplier Device Package: 42-TQFN (9x3.5)
Signal Conditioning: Input Equalization
товару немає в наявності
В кошику
од. на суму грн.
PI3EQX1204-CZHEX |
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Виробник: Diodes Incorporated
Description: IC REDRIVER SAS3 12.5GBPS 42TQFN
Packaging: Cut Tape (CT)
Package / Case: 42-VFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Applications: SAS, SATA
Data Rate (Max): 12.5Gbps
Supplier Device Package: 42-TQFN (9x3.5)
Signal Conditioning: Input Equalization
Description: IC REDRIVER SAS3 12.5GBPS 42TQFN
Packaging: Cut Tape (CT)
Package / Case: 42-VFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Applications: SAS, SATA
Data Rate (Max): 12.5Gbps
Supplier Device Package: 42-TQFN (9x3.5)
Signal Conditioning: Input Equalization
на замовлення 2992 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 567.53 грн |
10+ | 364.80 грн |
25+ | 317.33 грн |
100+ | 247.48 грн |
250+ | 222.77 грн |
500+ | 212.68 грн |
AP33771CFBZ-13-FA01 |
Виробник: Diodes Incorporated
Description: USB EXT POWER RANGE W-DFN3030-14
Packaging: Tape & Reel (TR)
Package / Case: 14-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 3.3V ~ 31V
Applications: USB, Type-C Controller
Current - Supply: 3.3mA
Supplier Device Package: W-DFN3030-14 (Type A1)
Description: USB EXT POWER RANGE W-DFN3030-14
Packaging: Tape & Reel (TR)
Package / Case: 14-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 3.3V ~ 31V
Applications: USB, Type-C Controller
Current - Supply: 3.3mA
Supplier Device Package: W-DFN3030-14 (Type A1)
товару немає в наявності
В кошику
од. на суму грн.
ADTC124ECAQ-13 |
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Виробник: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 310 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 310 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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В кошику
од. на суму грн.
ADTC124ECAQ-13 |
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Виробник: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 310 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 310 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 9390 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
23+ | 14.13 грн |
38+ | 8.16 грн |
100+ | 5.04 грн |
500+ | 3.45 грн |
1000+ | 3.03 грн |
2000+ | 2.68 грн |
5000+ | 2.25 грн |
FZT560QTA |
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Виробник: Diodes Incorporated
Description: PWR HI VOLTAGE TRANSISTOR SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
Frequency - Transition: 60MHz
Supplier Device Package: SOT-223
Grade: Automotive
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 2 W
Qualification: AEC-Q101
Description: PWR HI VOLTAGE TRANSISTOR SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
Frequency - Transition: 60MHz
Supplier Device Package: SOT-223
Grade: Automotive
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 2 W
Qualification: AEC-Q101
на замовлення 43000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 27.52 грн |
2000+ | 24.95 грн |
5000+ | 23.76 грн |
10000+ | 21.27 грн |
25000+ | 21.23 грн |
FZT560QTA |
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Виробник: Diodes Incorporated
Description: PWR HI VOLTAGE TRANSISTOR SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
Frequency - Transition: 60MHz
Supplier Device Package: SOT-223
Grade: Automotive
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 2 W
Qualification: AEC-Q101
Description: PWR HI VOLTAGE TRANSISTOR SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
Frequency - Transition: 60MHz
Supplier Device Package: SOT-223
Grade: Automotive
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 2 W
Qualification: AEC-Q101
на замовлення 43000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 62.80 грн |
10+ | 49.36 грн |
100+ | 38.38 грн |
500+ | 30.53 грн |
FZT560QTC |
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Виробник: Diodes Incorporated
Description: PWR HI VOLTAGE TRANSISTOR SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
Frequency - Transition: 60MHz
Supplier Device Package: SOT-223
Grade: Automotive
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 2 W
Qualification: AEC-Q101
Description: PWR HI VOLTAGE TRANSISTOR SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
Frequency - Transition: 60MHz
Supplier Device Package: SOT-223
Grade: Automotive
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 2 W
Qualification: AEC-Q101
на замовлення 248000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4000+ | 25.88 грн |
8000+ | 23.73 грн |
12000+ | 22.63 грн |
28000+ | 21.20 грн |
74HCT32S14-13 |
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Виробник: Diodes Incorporated
Description: IC GATE OR 4CH 2-INP 14SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 14-SO
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 24ns @ 4.5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 20 µA
Description: IC GATE OR 4CH 2-INP 14SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 14-SO
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 24ns @ 4.5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 20 µA
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 9.38 грн |
5000+ | 8.28 грн |
7500+ | 7.89 грн |
12500+ | 7.01 грн |
17500+ | 6.77 грн |
74HCT32S14-13 |
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Виробник: Diodes Incorporated
Description: IC GATE OR 4CH 2-INP 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 14-SO
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 24ns @ 4.5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 20 µA
Description: IC GATE OR 4CH 2-INP 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 14-SO
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 24ns @ 4.5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 20 µA
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 40.03 грн |
13+ | 23.58 грн |
25+ | 19.62 грн |
100+ | 14.13 грн |
250+ | 12.02 грн |
500+ | 10.72 грн |
1000+ | 9.48 грн |
APX324TSG-13 |
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Виробник: Diodes Incorporated
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 340µA (x4 Channels)
Slew Rate: 1V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 10 nA
Voltage - Input Offset: 1.7 mV
Supplier Device Package: 14-TSSOP
Number of Circuits: 4
Current - Output / Channel: 90 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 340µA (x4 Channels)
Slew Rate: 1V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 10 nA
Voltage - Input Offset: 1.7 mV
Supplier Device Package: 14-TSSOP
Number of Circuits: 4
Current - Output / Channel: 90 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
товару немає в наявності
В кошику
од. на суму грн.
APX324TSG-13 |
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Виробник: Diodes Incorporated
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 340µA (x4 Channels)
Slew Rate: 1V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 10 nA
Voltage - Input Offset: 1.7 mV
Supplier Device Package: 14-TSSOP
Number of Circuits: 4
Current - Output / Channel: 90 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 340µA (x4 Channels)
Slew Rate: 1V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 10 nA
Voltage - Input Offset: 1.7 mV
Supplier Device Package: 14-TSSOP
Number of Circuits: 4
Current - Output / Channel: 90 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 2465 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 69.08 грн |
10+ | 59.56 грн |
25+ | 56.51 грн |
100+ | 43.56 грн |
250+ | 40.72 грн |
500+ | 35.99 грн |
1000+ | 27.95 грн |
SDT10100P5-13D |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 100V 10A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Current - Reverse Leakage @ Vr: 80 µA @ 100 V
Description: DIODE SCHOTTKY 100V 10A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Current - Reverse Leakage @ Vr: 80 µA @ 100 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 13.56 грн |
10000+ | 12.12 грн |
SDT10100P5-13D |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 100V 10A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Current - Reverse Leakage @ Vr: 80 µA @ 100 V
Description: DIODE SCHOTTKY 100V 10A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Current - Reverse Leakage @ Vr: 80 µA @ 100 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 42.39 грн |
10+ | 34.92 грн |
100+ | 24.25 грн |
500+ | 17.77 грн |
1000+ | 14.44 грн |
2000+ | 12.91 грн |
SDT10100P5-13 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 100V 10A PDI5 5K
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Current - Reverse Leakage @ Vr: 80 µA @ 100 V
Description: DIODE SCHOTTKY 100V 10A PDI5 5K
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Current - Reverse Leakage @ Vr: 80 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
SDT10100P5-13 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 100V 10A PDI5 5K
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Current - Reverse Leakage @ Vr: 80 µA @ 100 V
Description: DIODE SCHOTTKY 100V 10A PDI5 5K
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Current - Reverse Leakage @ Vr: 80 µA @ 100 V
на замовлення 4880 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 42.39 грн |
10+ | 34.92 грн |
100+ | 24.25 грн |
500+ | 17.77 грн |
1000+ | 14.44 грн |
2000+ | 12.91 грн |
MBR750 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 50V 7.5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Description: DIODE SCHOTTKY 50V 7.5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
AP2127N-1.5TRG1 |
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Виробник: Diodes Incorporated
Description: IC REG LINEAR 1.5V 300MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 1.5V
PSRR: 68dB ~ 54dB (100Hz ~ 10kHz)
Voltage Dropout (Max): 1V @ 300mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 1.5V 300MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 1.5V
PSRR: 68dB ~ 54dB (100Hz ~ 10kHz)
Voltage Dropout (Max): 1V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 6.72 грн |