Продукція > DIOTEC SEMICONDUCTOR > Всі товари виробника DIOTEC SEMICONDUCTOR (30407) > Сторінка 114 з 507
| Фото | Назва | Виробник | Інформація |
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MMBT3906 | Diotec Semiconductor |
Description: TRANS PNP 40V 0.2A SOT23-3Packaging: Strip Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 250MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 250 mW |
на замовлення 8970 шт: термін постачання 21-31 дні (днів) |
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2N2907A | Diotec Semiconductor |
Description: TRANS PNP 60V 0.6A TO-92Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 250MHz Supplier Device Package: TO-92 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 625 mW |
на замовлення 3150 шт: термін постачання 21-31 дні (днів) |
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2N2907A | Diotec Semiconductor |
Description: TRANS PNP 60V 0.6A TO-92Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 250MHz Supplier Device Package: TO-92 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 625 mW |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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1N4007 | Diotec Semiconductor |
Description: DIODE STANDARD 1000V 1A DO204ACPackaging: Cut Tape (CT) Package / Case: DO-204AC, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AC (DO-41) Operating Temperature - Junction: -50°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N4007 | Diotec Semiconductor |
Description: DIODE STANDARD 1000V 1A DO204ACPackaging: Tape & Box (TB) Package / Case: DO-204AC, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AC (DO-41) Operating Temperature - Junction: -50°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 549711 шт: термін постачання 21-31 дні (днів) |
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MMBT2222A | Diotec Semiconductor |
Description: TRANS NPN 40V 0.6A SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 250MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 250 mW |
на замовлення 66000 шт: термін постачання 21-31 дні (днів) |
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MMBT2222A | Diotec Semiconductor |
Description: TRANS NPN 40V 0.6A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 250MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 250 mW |
на замовлення 66785 шт: термін постачання 21-31 дні (днів) |
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5KP36CA | Diotec Semiconductor |
Description: TVS DIODE 36VWM 58.1VC P600Packaging: Cut Tape (CT) Package / Case: P600, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -50°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 86A Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: P600 Bidirectional Channels: 1 Voltage - Breakdown (Min): 40V Voltage - Clamping (Max) @ Ipp: 58.1V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No |
на замовлення 176 шт: термін постачання 21-31 дні (днів) |
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5KP36CA | Diotec Semiconductor |
Description: TVS DIODE 36VWM 58.1VC P600Packaging: Tape & Box (TB) Package / Case: P600, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -50°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 86A Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: P600 Bidirectional Channels: 1 Voltage - Breakdown (Min): 40V Voltage - Clamping (Max) @ Ipp: 58.1V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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5KP36CA-AQ | Diotec Semiconductor |
Description: TVS DIODE 36VWM 58.1VC P-600Packaging: Bulk Package / Case: P600, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -50°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 86A Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: P600 Bidirectional Channels: 1 Voltage - Breakdown (Min): 40V Voltage - Clamping (Max) @ Ipp: 58.1V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ES1D | Diotec Semiconductor |
Description: DIODE STANDARD 200V 1A DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 15 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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ES1D | Diotec Semiconductor |
Description: DIODE STANDARD 200V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 15 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 7514 шт: термін постачання 21-31 дні (днів) |
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DI080N10PQ-AQ | Diotec Semiconductor |
Description: MOSFET N-CH 100V 80A 8-POWERTDFNPackaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-QFN (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3742 pF @ 50 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAV21 | Diotec Semiconductor |
Description: DIODE STANDARD 200V 250MA DO35Packaging: Box Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 250mA Supplier Device Package: DO-35 Operating Temperature - Junction: -50°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V |
на замовлення 4990 шт: термін постачання 21-31 дні (днів) |
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ZMM3.9R13 | Diotec Semiconductor |
Description: DIODE ZENER 3.9V 500MW SOD80CTolerance: ±5% Packaging: Strip Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 85 Ohms Supplier Device Package: SOD-80C Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 1 V |
на замовлення 10200 шт: термін постачання 21-31 дні (днів) |
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ZMM22 | Diotec Semiconductor |
Description: DIODE ZENER 22V 500MW SOD80CTolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 55 Ohms Supplier Device Package: SOD-80C Power - Max: 500 mW Current - Reverse Leakage @ Vr: 100 nA @ 16 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ZMM22 | Diotec Semiconductor |
Description: DIODE ZENER 22V 500MW SOD80CTolerance: ±5% Packaging: Cut Tape (CT) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 55 Ohms Supplier Device Package: SOD-80C Power - Max: 500 mW Current - Reverse Leakage @ Vr: 100 nA @ 16 V |
на замовлення 2254 шт: термін постачання 21-31 дні (днів) |
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SB240 | Diotec Semiconductor |
Description: DIODE SCHOTTKY 40V 2A DO204ACPackaging: Cut Tape (CT) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V |
на замовлення 3590 шт: термін постачання 21-31 дні (днів) |
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SB240 | Diotec Semiconductor |
Description: DIODE SCHOTTKY 40V 2A DO204ACPackaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZT52C24 | Diotec Semiconductor |
Description: DIODE ZENER 24V 500MW SOD123FTolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: SOD-123F Power - Max: 500 mW Current - Reverse Leakage @ Vr: 100 nA @ 19 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZT52C24 | Diotec Semiconductor |
Description: DIODE ZENER 24V 500MW SOD123FTolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: SOD-123F Power - Max: 500 mW Current - Reverse Leakage @ Vr: 100 nA @ 19 V |
на замовлення 2770 шт: термін постачання 21-31 дні (днів) |
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ZPY36 | Diotec Semiconductor |
Description: DIODE ZENER 36V 1.3W DO204ACTolerance: ±5% Packaging: Cut Tape (CT) Package / Case: DO-204AC, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -50°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 36 V Impedance (Max) (Zzt): 16 Ohms Supplier Device Package: DO-204AC (DO-41) Power - Max: 1.3 W Current - Reverse Leakage @ Vr: 1 µA @ 27 V |
на замовлення 4451 шт: термін постачання 21-31 дні (днів) |
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ZPY36 | Diotec Semiconductor |
Description: DIODE ZENER 36V 1.3W DO204ACTolerance: ±5% Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -50°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 36 V Impedance (Max) (Zzt): 16 Ohms Supplier Device Package: DO-204AC (DO-41) Power - Max: 1.3 W Current - Reverse Leakage @ Vr: 1 µA @ 27 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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GBI25J-LV | Diotec Semiconductor |
Description: BRIDGE RECT 1PHASE 600V 4.2A GBIPackaging: Box Package / Case: 4-SIP, GBI Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -50°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBI Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 4.2 A Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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GBI25J-T | Diotec Semiconductor |
Description: BRIDGE RECT 1PHASE 600V 4.2A GBIPackaging: Bulk Package / Case: 4-SIP, GBI Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -50°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBI Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 4.2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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GBI25J-LX-T | Diotec Semiconductor |
Description: GBI25J-LX-TPackaging: Bulk Package / Case: 4-SIP, GBI Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -50°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBI Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 4.2 A Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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GBI25J-LX | Diotec Semiconductor |
Description: GBI25J-LXPackaging: Bulk Package / Case: 4-SIP, GBI Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -50°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBI Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 4.2 A Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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GBI25J-LV-T | Diotec Semiconductor |
Description: GBI25J-LV-TPackaging: Bulk Package / Case: 4-SIP, GBI Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -50°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBI Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 3.2 A Voltage - Forward (Vf) (Max) @ If: 920 mV @ 7.5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2BZX84C18 | Diotec Semiconductor |
Description: DIODE ZENER ARRAY 18V SOT-23-3Tolerance: ±5% Packaging: Strip Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Configuration: 1 Pair Common Anode Operating Temperature: -50°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 45 Ohms Supplier Device Package: SOT-23-3 (TO-236) Power - Max: 300 mW Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BZX84C4V3 | Diotec Semiconductor |
Description: DIODE ZENER 4.3V 300MW SOT23Tolerance: ±5% Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 4.3 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOT-23-3 (TO-236) Power - Max: 300 mW Current - Reverse Leakage @ Vr: 3 µA @ 1 V |
на замовлення 565 шт: термін постачання 21-31 дні (днів) |
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BZX84C5V1 | Diotec Semiconductor |
Description: DIODE ZENER 5.1V 300MW SOT23Tolerance: ±5% Packaging: Strip Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: SOT-23-3 (TO-236) Power - Max: 300 mW Current - Reverse Leakage @ Vr: 2 µA @ 2 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BZT52C36-AQ | Diotec Semiconductor |
Description: ZENER, SOD-123F, 36V, 0.5W, 5%,Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 36 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOD-123F Power - Max: 500 mW Current - Reverse Leakage @ Vr: 100 nA @ 27 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZT52C36-AQ | Diotec Semiconductor |
Description: ZENER, SOD-123F, 36V, 0.5W, 5%,Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 36 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOD-123F Power - Max: 500 mW Current - Reverse Leakage @ Vr: 100 nA @ 27 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ABS2 | Diotec Semiconductor |
Description: BRIDGE RECT 1P 200V 800MA ABSPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -50°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: ABS Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 800 mA Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 800 mA Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 10200 шт: термін постачання 21-31 дні (днів) |
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MBR20150CT | Diotec Semiconductor |
Description: DIODE ARR SCHOT 150V 10A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220AB Operating Temperature - Junction: -50°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V |
на замовлення 1090 шт: термін постачання 21-31 дні (днів) |
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US2M-AQ | Diotec Semiconductor |
Description: DIODE STANDARD 1000V 2A DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -50°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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US2M-AQ | Diotec Semiconductor |
Description: DIODE STANDARD 1000V 2A DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -50°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MMBT2222A | Diotec Semiconductor |
Description: TRANS NPN 40V 0.6A SOT23-3Packaging: Strip Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 250MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 250 mW |
на замовлення 2978 шт: термін постачання 21-31 дні (днів) |
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SDB13HS-AQ | Diotec Semiconductor |
Description: DIODE SCHOTTKY 30V 1A SOD323FPackaging: Bulk Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 30pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-323F Operating Temperature - Junction: -40°C ~ 125°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 1 A Current - Reverse Leakage @ Vr: 200 µA @ 30 V Qualification: AEC-Q101 |
на замовлення 2180 шт: термін постачання 21-31 дні (днів) |
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SDB13HS | Diotec Semiconductor |
Description: DIODE SCHOTTKY 30V 1A SOD323FPackaging: Bulk Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 30pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-323F Operating Temperature - Junction: -40°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 1 A Current - Reverse Leakage @ Vr: 200 µA @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BCP53-16 | Diotec Semiconductor |
Description: TRANS PNP 80V 1A SOT-223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 120MHz Supplier Device Package: SOT-223 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.3 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BCP53-16 | Diotec Semiconductor |
Description: TRANS PNP 80V 1A SOT-223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 120MHz Supplier Device Package: SOT-223 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.3 W |
на замовлення 2262 шт: термін постачання 21-31 дні (днів) |
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GBU4M | Diotec Semiconductor |
Description: BRIDGE RECT 1PHASE 1KV 2.8A GBUPackaging: Bulk Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -50°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 2.8 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 26 шт: термін постачання 21-31 дні (днів) |
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SI-A1750 | Diotec Semiconductor |
Description: DIODE STD 4800V 4A HOCKEY PUCKPackaging: Box Package / Case: UGE Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: Hockey Puck Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 4800 V Voltage - Forward (Vf) (Max) @ If: 4 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 4.8 V |
на замовлення 54 шт: термін постачання 21-31 дні (днів) |
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SI-A1750 | Diotec Semiconductor |
Description: DIODE STD 4800V 4A HOCKEY PUCKPackaging: Bulk Package / Case: UGE Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: Hockey Puck Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 4800 V Voltage - Forward (Vf) (Max) @ If: 4 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 4800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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KBPC10/15/2501WP | Diotec Semiconductor |
Description: BRIDGE RECT 1P 100V 25A KBPC WPPackaging: Bulk Package / Case: 4-Square, KBPC WP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -50°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPC WP Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 12.5 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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KBPC10/15/2512WP | Diotec Semiconductor |
Description: BRIDGE RECT 1P 1.2KV 25A KBPC WPPackaging: Bulk Package / Case: 4-Square, KBPC WP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -50°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPC WP Voltage - Peak Reverse (Max): 1.2 kV Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 12.5 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MB6S | Diotec Semiconductor |
Description: BRIDGE RECT 1P 600V 0.5A TO269AAPackaging: Tape & Reel (TR) Package / Case: TO-269AA, 4-BESOP Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -50°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TO-269AA MINIDIL SLIM Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 500 mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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MB6S | Diotec Semiconductor |
Description: BRIDGE RECT 1P 600V 0.5A TO269AAPackaging: Cut Tape (CT) Package / Case: TO-269AA, 4-BESOP Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -50°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TO-269AA MINIDIL SLIM Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 500 mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 5752 шт: термін постачання 21-31 дні (днів) |
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MPSA06 | Diotec Semiconductor |
Description: TRANS NPN 80V 0.5A TO-92Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: TO-92 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 625 mW |
на замовлення 2846 шт: термін постачання 21-31 дні (днів) |
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MPSA06 | Diotec Semiconductor |
Description: TRANS NPN 80V 0.5A TO-92Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: TO-92 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 625 mW |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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BC549C | Diotec Semiconductor |
Description: TRANS NPN 30V 0.1A TO-92Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 500 mW |
на замовлення 858 шт: термін постачання 21-31 дні (днів) |
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BC549C | Diotec Semiconductor |
Description: TRANS NPN 30V 0.1A TO-92Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 500 mW |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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BC549C | Diotec Semiconductor |
Description: TRANS NPN 30V 0.1A TO-92Packaging: Strip Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 500 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DB3 | Diotec Semiconductor |
Description: DIAC/SIDAC 28-36V 2A DO-35Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Operating Temperature: -50°C ~ 100°C (TJ) Voltage - Breakover: 28 ~ 36V Current - Breakover: 200 µA Supplier Device Package: DO-35 Current - Peak Output: 2 A |
на замовлення 77 шт: термін постачання 21-31 дні (днів) |
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DB3 | Diotec Semiconductor |
Description: DIAC/SIDAC 28-36V 2A DO-35Packaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Operating Temperature: -50°C ~ 100°C (TJ) Voltage - Breakover: 28 ~ 36V Current - Breakover: 200 µA Supplier Device Package: DO-35 Current - Peak Output: 2 A |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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2N7000 | Diotec Semiconductor |
Description: MOSFET TO-92 60V 0.2APackaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-92 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V |
на замовлення 6889 шт: термін постачання 21-31 дні (днів) |
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2N7000 | Diotec Semiconductor |
Description: MOSFET TO-92 60V 0.2APackaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-92 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V |
на замовлення 40000 шт: термін постачання 21-31 дні (днів) |
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GL1D | Diotec Semiconductor |
Description: DIODE STANDARD 200V 1A DO213AAPackaging: Tape & Reel (TR) Package / Case: DO-213AA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AA (MINIMELF) Operating Temperature - Junction: -50°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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GL1D | Diotec Semiconductor |
Description: DIODE STANDARD 200V 1A DO213AAPackaging: Cut Tape (CT) Package / Case: DO-213AA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AA (MINIMELF) Operating Temperature - Junction: -50°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 1700 шт: термін постачання 21-31 дні (днів) |
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| MMBT3906 |
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Виробник: Diotec Semiconductor
Description: TRANS PNP 40V 0.2A SOT23-3
Packaging: Strip
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Description: TRANS PNP 40V 0.2A SOT23-3
Packaging: Strip
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
на замовлення 8970 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 15.44 грн |
| 38+ | 8.84 грн |
| 100+ | 5.48 грн |
| 500+ | 3.76 грн |
| 1000+ | 3.31 грн |
| 2000+ | 2.93 грн |
| 5000+ | 2.47 грн |
| 2N2907A |
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Виробник: Diotec Semiconductor
Description: TRANS PNP 60V 0.6A TO-92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Description: TRANS PNP 60V 0.6A TO-92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
на замовлення 3150 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 12.01 грн |
| 46+ | 7.19 грн |
| 100+ | 4.45 грн |
| 500+ | 3.03 грн |
| 1000+ | 2.66 грн |
| 2000+ | 2.35 грн |
| 2N2907A |
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Виробник: Diotec Semiconductor
Description: TRANS PNP 60V 0.6A TO-92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Description: TRANS PNP 60V 0.6A TO-92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 2.30 грн |
| 8000+ | 1.98 грн |
| 12000+ | 1.86 грн |
| 1N4007 |
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Виробник: Diotec Semiconductor
Description: DIODE STANDARD 1000V 1A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-41)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE STANDARD 1000V 1A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-41)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N4007 |
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Виробник: Diotec Semiconductor
Description: DIODE STANDARD 1000V 1A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-41)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE STANDARD 1000V 1A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-41)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 549711 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 1.94 грн |
| 10000+ | 1.33 грн |
| 15000+ | 1.27 грн |
| 25000+ | 1.04 грн |
| 35000+ | 1.01 грн |
| 50000+ | 0.97 грн |
| 125000+ | 0.94 грн |
| 250000+ | 0.87 грн |
| 500000+ | 0.80 грн |
| MMBT2222A |
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Виробник: Diotec Semiconductor
Description: TRANS NPN 40V 0.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Description: TRANS NPN 40V 0.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
на замовлення 66000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.81 грн |
| 6000+ | 1.54 грн |
| 9000+ | 1.44 грн |
| 15000+ | 1.24 грн |
| 21000+ | 1.18 грн |
| 30000+ | 1.12 грн |
| MMBT2222A |
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Виробник: Diotec Semiconductor
Description: TRANS NPN 40V 0.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Description: TRANS NPN 40V 0.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
на замовлення 66785 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 37+ | 9.43 грн |
| 61+ | 5.45 грн |
| 100+ | 3.38 грн |
| 500+ | 2.28 грн |
| 1000+ | 2.00 грн |
| 5KP36CA |
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Виробник: Diotec Semiconductor
Description: TVS DIODE 36VWM 58.1VC P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -50°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 86A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Description: TVS DIODE 36VWM 58.1VC P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -50°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 86A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
на замовлення 176 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.19 грн |
| 5KP36CA |
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Виробник: Diotec Semiconductor
Description: TVS DIODE 36VWM 58.1VC P600
Packaging: Tape & Box (TB)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -50°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 86A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Description: TVS DIODE 36VWM 58.1VC P600
Packaging: Tape & Box (TB)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -50°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 86A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
на замовлення 500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 500+ | 33.11 грн |
| 5KP36CA-AQ |
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Виробник: Diotec Semiconductor
Description: TVS DIODE 36VWM 58.1VC P-600
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -50°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 86A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 36VWM 58.1VC P-600
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -50°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 86A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| ES1D |
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Виробник: Diotec Semiconductor
Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7500+ | 5.99 грн |
| ES1D |
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Виробник: Diotec Semiconductor
Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 7514 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 23.16 грн |
| 23+ | 14.95 грн |
| 100+ | 12.77 грн |
| 500+ | 8.96 грн |
| 1000+ | 7.99 грн |
| 2000+ | 7.17 грн |
| DI080N10PQ-AQ |
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Виробник: Diotec Semiconductor
Description: MOSFET N-CH 100V 80A 8-POWERTDFN
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3742 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 80A 8-POWERTDFN
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3742 pF @ 50 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| BAV21 |
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Виробник: Diotec Semiconductor
Description: DIODE STANDARD 200V 250MA DO35
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 250mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -50°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Description: DIODE STANDARD 200V 250MA DO35
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 250mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -50°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
на замовлення 4990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 18.01 грн |
| 31+ | 10.74 грн |
| 100+ | 6.66 грн |
| 500+ | 4.59 грн |
| 1000+ | 4.05 грн |
| 2000+ | 3.60 грн |
| ZMM3.9R13 |
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Виробник: Diotec Semiconductor
Description: DIODE ZENER 3.9V 500MW SOD80C
Tolerance: ±5%
Packaging: Strip
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-80C
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Description: DIODE ZENER 3.9V 500MW SOD80C
Tolerance: ±5%
Packaging: Strip
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-80C
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
на замовлення 10200 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 9.85 грн |
| 5000+ | 4.84 грн |
| 10000+ | 2.55 грн |
| ZMM22 |
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Виробник: Diotec Semiconductor
Description: DIODE ZENER 22V 500MW SOD80C
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-80C
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 16 V
Description: DIODE ZENER 22V 500MW SOD80C
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-80C
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 16 V
товару немає в наявності
В кошику
од. на суму грн.
| ZMM22 |
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Виробник: Diotec Semiconductor
Description: DIODE ZENER 22V 500MW SOD80C
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-80C
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 16 V
Description: DIODE ZENER 22V 500MW SOD80C
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-80C
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 16 V
на замовлення 2254 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 40+ | 8.58 грн |
| 55+ | 6.03 грн |
| 100+ | 4.82 грн |
| 500+ | 3.54 грн |
| 1000+ | 3.08 грн |
| SB240 |
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Виробник: Diotec Semiconductor
Description: DIODE SCHOTTKY 40V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Description: DIODE SCHOTTKY 40V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
на замовлення 3590 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 29.16 грн |
| 25+ | 13.71 грн |
| 100+ | 10.63 грн |
| 500+ | 7.42 грн |
| 1000+ | 6.44 грн |
| 2000+ | 5.90 грн |
| SB240 |
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Виробник: Diotec Semiconductor
Description: DIODE SCHOTTKY 40V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Description: DIODE SCHOTTKY 40V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
товару немає в наявності
В кошику
од. на суму грн.
| BZT52C24 |
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Виробник: Diotec Semiconductor
Description: DIODE ZENER 24V 500MW SOD123F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
Description: DIODE ZENER 24V 500MW SOD123F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
товару немає в наявності
В кошику
од. на суму грн.
| BZT52C24 |
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Виробник: Diotec Semiconductor
Description: DIODE ZENER 24V 500MW SOD123F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
Description: DIODE ZENER 24V 500MW SOD123F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
на замовлення 2770 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 12.01 грн |
| 61+ | 5.45 грн |
| 100+ | 4.30 грн |
| 500+ | 3.08 грн |
| 1000+ | 2.95 грн |
| ZPY36 |
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Виробник: Diotec Semiconductor
Description: DIODE ZENER 36V 1.3W DO204AC
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-204AC (DO-41)
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 1 µA @ 27 V
Description: DIODE ZENER 36V 1.3W DO204AC
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-204AC (DO-41)
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 1 µA @ 27 V
на замовлення 4451 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 25.73 грн |
| 26+ | 13.05 грн |
| 100+ | 8.28 грн |
| 500+ | 6.63 грн |
| 1000+ | 4.95 грн |
| ZPY36 |
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Виробник: Diotec Semiconductor
Description: DIODE ZENER 36V 1.3W DO204AC
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-204AC (DO-41)
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 1 µA @ 27 V
Description: DIODE ZENER 36V 1.3W DO204AC
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-204AC (DO-41)
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 1 µA @ 27 V
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| GBI25J-LV |
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Виробник: Diotec Semiconductor
Description: BRIDGE RECT 1PHASE 600V 4.2A GBI
Packaging: Box
Package / Case: 4-SIP, GBI
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBI
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4.2 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 4.2A GBI
Packaging: Box
Package / Case: 4-SIP, GBI
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBI
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4.2 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 204.12 грн |
| 10+ | 126.77 грн |
| 100+ | 87.15 грн |
| 500+ | 65.89 грн |
| GBI25J-T |
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Виробник: Diotec Semiconductor
Description: BRIDGE RECT 1PHASE 600V 4.2A GBI
Packaging: Bulk
Package / Case: 4-SIP, GBI
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBI
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4.2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 4.2A GBI
Packaging: Bulk
Package / Case: 4-SIP, GBI
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBI
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4.2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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од. на суму грн.
| GBI25J-LX-T |
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Виробник: Diotec Semiconductor
Description: GBI25J-LX-T
Packaging: Bulk
Package / Case: 4-SIP, GBI
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBI
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4.2 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: GBI25J-LX-T
Packaging: Bulk
Package / Case: 4-SIP, GBI
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBI
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4.2 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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од. на суму грн.
| GBI25J-LX |
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Виробник: Diotec Semiconductor
Description: GBI25J-LX
Packaging: Bulk
Package / Case: 4-SIP, GBI
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBI
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4.2 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: GBI25J-LX
Packaging: Bulk
Package / Case: 4-SIP, GBI
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBI
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4.2 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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од. на суму грн.
| GBI25J-LV-T |
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Виробник: Diotec Semiconductor
Description: GBI25J-LV-T
Packaging: Bulk
Package / Case: 4-SIP, GBI
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBI
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.2 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: GBI25J-LV-T
Packaging: Bulk
Package / Case: 4-SIP, GBI
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBI
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.2 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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В кошику
од. на суму грн.
| 2BZX84C18 |
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Виробник: Diotec Semiconductor
Description: DIODE ZENER ARRAY 18V SOT-23-3
Tolerance: ±5%
Packaging: Strip
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Description: DIODE ZENER ARRAY 18V SOT-23-3
Tolerance: ±5%
Packaging: Strip
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 24.01 грн |
| 24+ | 14.29 грн |
| 100+ | 8.96 грн |
| 500+ | 6.22 грн |
| 1000+ | 5.52 грн |
| 2000+ | 4.92 грн |
| BZX84C4V3 |
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Виробник: Diotec Semiconductor
Description: DIODE ZENER 4.3V 300MW SOT23
Tolerance: ±5%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Description: DIODE ZENER 4.3V 300MW SOT23
Tolerance: ±5%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
на замовлення 565 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 10.29 грн |
| 61+ | 5.45 грн |
| 100+ | 3.35 грн |
| 500+ | 2.75 грн |
| BZX84C5V1 |
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Виробник: Diotec Semiconductor
Description: DIODE ZENER 5.1V 300MW SOT23
Tolerance: ±5%
Packaging: Strip
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Description: DIODE ZENER 5.1V 300MW SOT23
Tolerance: ±5%
Packaging: Strip
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 21.44 грн |
| 26+ | 12.72 грн |
| 100+ | 7.93 грн |
| 500+ | 5.48 грн |
| 1000+ | 4.85 грн |
| 2000+ | 4.31 грн |
| BZT52C36-AQ |
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Виробник: Diotec Semiconductor
Description: ZENER, SOD-123F, 36V, 0.5W, 5%,
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Description: ZENER, SOD-123F, 36V, 0.5W, 5%,
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
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| BZT52C36-AQ |
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Виробник: Diotec Semiconductor
Description: ZENER, SOD-123F, 36V, 0.5W, 5%,
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Description: ZENER, SOD-123F, 36V, 0.5W, 5%,
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
товару немає в наявності
В кошику
од. на суму грн.
| ABS2 |
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Виробник: Diotec Semiconductor
Description: BRIDGE RECT 1P 200V 800MA ABS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 800 mA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: BRIDGE RECT 1P 200V 800MA ABS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 800 mA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 10200 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1250+ | 17.78 грн |
| 2500+ | 8.72 грн |
| 5000+ | 4.58 грн |
| 10000+ | 3.41 грн |
| MBR20150CT |
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Виробник: Diotec Semiconductor
Description: DIODE ARR SCHOT 150V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Description: DIODE ARR SCHOT 150V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
на замовлення 1090 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 132.94 грн |
| 50+ | 52.36 грн |
| 100+ | 43.42 грн |
| 500+ | 36.23 грн |
| 1000+ | 33.95 грн |
| US2M-AQ |
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Виробник: Diotec Semiconductor
Description: DIODE STANDARD 1000V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
Description: DIODE STANDARD 1000V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 7.35 грн |
| US2M-AQ |
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Виробник: Diotec Semiconductor
Description: DIODE STANDARD 1000V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
Description: DIODE STANDARD 1000V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 14.58 грн |
| 34+ | 9.75 грн |
| 39+ | 8.56 грн |
| 100+ | 6.84 грн |
| 250+ | 6.28 грн |
| 500+ | 5.94 грн |
| 1000+ | 5.57 грн |
| MMBT2222A |
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Виробник: Diotec Semiconductor
Description: TRANS NPN 40V 0.6A SOT23-3
Packaging: Strip
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Description: TRANS NPN 40V 0.6A SOT23-3
Packaging: Strip
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
на замовлення 2978 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 17.15 грн |
| 33+ | 10.16 грн |
| 100+ | 6.33 грн |
| 500+ | 4.35 грн |
| 1000+ | 3.83 грн |
| 2000+ | 3.40 грн |
| SDB13HS-AQ |
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Виробник: Diotec Semiconductor
Description: DIODE SCHOTTKY 30V 1A SOD323F
Packaging: Bulk
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 30pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -40°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 30V 1A SOD323F
Packaging: Bulk
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 30pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -40°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Qualification: AEC-Q101
на замовлення 2180 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 18.87 грн |
| 30+ | 11.23 грн |
| 100+ | 7.00 грн |
| 500+ | 4.83 грн |
| 1000+ | 4.26 грн |
| SDB13HS |
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Виробник: Diotec Semiconductor
Description: DIODE SCHOTTKY 30V 1A SOD323F
Packaging: Bulk
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 30pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1A SOD323F
Packaging: Bulk
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 30pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
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| BCP53-16 |
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Виробник: Diotec Semiconductor
Description: TRANS PNP 80V 1A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: SOT-223
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.3 W
Description: TRANS PNP 80V 1A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: SOT-223
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.3 W
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| BCP53-16 |
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Виробник: Diotec Semiconductor
Description: TRANS PNP 80V 1A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: SOT-223
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.3 W
Description: TRANS PNP 80V 1A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: SOT-223
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.3 W
на замовлення 2262 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 36.02 грн |
| 16+ | 21.47 грн |
| 100+ | 13.61 грн |
| 500+ | 9.58 грн |
| 1000+ | 8.55 грн |
| 2000+ | 7.68 грн |
| GBU4M |
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Виробник: Diotec Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 2.8A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2.8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 2.8A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2.8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 26 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 61.75 грн |
| 10+ | 36.92 грн |
| SI-A1750 |
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Виробник: Diotec Semiconductor
Description: DIODE STD 4800V 4A HOCKEY PUCK
Packaging: Box
Package / Case: UGE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: Hockey Puck
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 4800 V
Voltage - Forward (Vf) (Max) @ If: 4 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 4.8 V
Description: DIODE STD 4800V 4A HOCKEY PUCK
Packaging: Box
Package / Case: UGE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: Hockey Puck
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 4800 V
Voltage - Forward (Vf) (Max) @ If: 4 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 4.8 V
на замовлення 54 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 12621.99 грн |
| 2+ | 7487.45 грн |
| 4+ | 5357.71 грн |
| 8+ | 3912.21 грн |
| SI-A1750 |
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Виробник: Diotec Semiconductor
Description: DIODE STD 4800V 4A HOCKEY PUCK
Packaging: Bulk
Package / Case: UGE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: Hockey Puck
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 4800 V
Voltage - Forward (Vf) (Max) @ If: 4 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 4800 V
Description: DIODE STD 4800V 4A HOCKEY PUCK
Packaging: Bulk
Package / Case: UGE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: Hockey Puck
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 4800 V
Voltage - Forward (Vf) (Max) @ If: 4 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 4800 V
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| KBPC10/15/2501WP |
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Виробник: Diotec Semiconductor
Description: BRIDGE RECT 1P 100V 25A KBPC WP
Packaging: Bulk
Package / Case: 4-Square, KBPC WP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC WP
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: BRIDGE RECT 1P 100V 25A KBPC WP
Packaging: Bulk
Package / Case: 4-Square, KBPC WP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC WP
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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| KBPC10/15/2512WP |
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Виробник: Diotec Semiconductor
Description: BRIDGE RECT 1P 1.2KV 25A KBPC WP
Packaging: Bulk
Package / Case: 4-Square, KBPC WP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC WP
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Description: BRIDGE RECT 1P 1.2KV 25A KBPC WP
Packaging: Bulk
Package / Case: 4-Square, KBPC WP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC WP
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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| MB6S |
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Виробник: Diotec Semiconductor
Description: BRIDGE RECT 1P 600V 0.5A TO269AA
Packaging: Tape & Reel (TR)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TO-269AA MINIDIL SLIM
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1P 600V 0.5A TO269AA
Packaging: Tape & Reel (TR)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TO-269AA MINIDIL SLIM
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 5.71 грн |
| MB6S |
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Виробник: Diotec Semiconductor
Description: BRIDGE RECT 1P 600V 0.5A TO269AA
Packaging: Cut Tape (CT)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TO-269AA MINIDIL SLIM
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1P 600V 0.5A TO269AA
Packaging: Cut Tape (CT)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TO-269AA MINIDIL SLIM
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 5752 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 28.30 грн |
| 20+ | 16.93 грн |
| 100+ | 10.66 грн |
| 500+ | 7.44 грн |
| 1000+ | 6.62 грн |
| 2000+ | 5.92 грн |
| MPSA06 |
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Виробник: Diotec Semiconductor
Description: TRANS NPN 80V 0.5A TO-92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
Description: TRANS NPN 80V 0.5A TO-92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
на замовлення 2846 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 15.44 грн |
| 38+ | 8.92 грн |
| 100+ | 5.51 грн |
| 500+ | 3.77 грн |
| 1000+ | 3.32 грн |
| 2000+ | 2.94 грн |
| MPSA06 |
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Виробник: Diotec Semiconductor
Description: TRANS NPN 80V 0.5A TO-92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
Description: TRANS NPN 80V 0.5A TO-92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 2.89 грн |
| 8000+ | 2.50 грн |
| BC549C |
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Виробник: Diotec Semiconductor
Description: TRANS NPN 30V 0.1A TO-92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
Description: TRANS NPN 30V 0.1A TO-92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
на замовлення 858 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 10.29 грн |
| 58+ | 5.78 грн |
| 100+ | 3.58 грн |
| 500+ | 2.43 грн |
| BC549C |
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Виробник: Diotec Semiconductor
Description: TRANS NPN 30V 0.1A TO-92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
Description: TRANS NPN 30V 0.1A TO-92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 1.83 грн |
| BC549C |
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Виробник: Diotec Semiconductor
Description: TRANS NPN 30V 0.1A TO-92
Packaging: Strip
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
Description: TRANS NPN 30V 0.1A TO-92
Packaging: Strip
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
товару немає в наявності
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од. на суму грн.
| DB3 |
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Виробник: Diotec Semiconductor
Description: DIAC/SIDAC 28-36V 2A DO-35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Operating Temperature: -50°C ~ 100°C (TJ)
Voltage - Breakover: 28 ~ 36V
Current - Breakover: 200 µA
Supplier Device Package: DO-35
Current - Peak Output: 2 A
Description: DIAC/SIDAC 28-36V 2A DO-35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Operating Temperature: -50°C ~ 100°C (TJ)
Voltage - Breakover: 28 ~ 36V
Current - Breakover: 200 µA
Supplier Device Package: DO-35
Current - Peak Output: 2 A
на замовлення 77 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 31+ | 11.15 грн |
| 54+ | 6.19 грн |
| DB3 |
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Виробник: Diotec Semiconductor
Description: DIAC/SIDAC 28-36V 2A DO-35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Operating Temperature: -50°C ~ 100°C (TJ)
Voltage - Breakover: 28 ~ 36V
Current - Breakover: 200 µA
Supplier Device Package: DO-35
Current - Peak Output: 2 A
Description: DIAC/SIDAC 28-36V 2A DO-35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Operating Temperature: -50°C ~ 100°C (TJ)
Voltage - Breakover: 28 ~ 36V
Current - Breakover: 200 µA
Supplier Device Package: DO-35
Current - Peak Output: 2 A
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 1.90 грн |
| 10000+ | 1.63 грн |
| 2N7000 |
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Виробник: Diotec Semiconductor
Description: MOSFET TO-92 60V 0.2A
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Description: MOSFET TO-92 60V 0.2A
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
на замовлення 6889 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 19.73 грн |
| 29+ | 11.73 грн |
| 100+ | 7.33 грн |
| 500+ | 5.06 грн |
| 1000+ | 4.48 грн |
| 2000+ | 3.98 грн |
| 2N7000 |
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Виробник: Diotec Semiconductor
Description: MOSFET TO-92 60V 0.2A
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Description: MOSFET TO-92 60V 0.2A
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 3.94 грн |
| 8000+ | 3.42 грн |
| 12000+ | 3.22 грн |
| 20000+ | 2.82 грн |
| 28000+ | 2.70 грн |
| 40000+ | 2.59 грн |
| GL1D |
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Виробник: Diotec Semiconductor
Description: DIODE STANDARD 200V 1A DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AA (MINIMELF)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE STANDARD 200V 1A DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AA (MINIMELF)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| GL1D |
![]() |
Виробник: Diotec Semiconductor
Description: DIODE STANDARD 200V 1A DO213AA
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AA (MINIMELF)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE STANDARD 200V 1A DO213AA
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AA (MINIMELF)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 1700 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 16.30 грн |
| 34+ | 9.91 грн |
| 100+ | 6.13 грн |
| 500+ | 4.98 грн |
| 1000+ | 3.75 грн |




























