Продукція > DIOTEC SEMICONDUCTOR > Всі товари виробника DIOTEC SEMICONDUCTOR (27089) > Сторінка 1 з 452
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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2N5551 (транзистор біполярний NPN) Код товару: 31024 |
DIOTEC SEMICONDUCTOR |
Транзистори > Біполярні NPN Корпус: TO-92 fT: 300 MHz Uceo,V: 160 V Ucbo,V: 180 V Ic,A: 0,6 A h21: 250 Монтаж: THT |
товар відсутній
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SM4007-CT | Diotec Semiconductor |
Description: DIODE GP 1KV 1A MELF DO-213AB Packaging: Strip Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: MELF DO-213AB Operating Temperature - Junction: -50°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
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SM4001-CT | Diotec Semiconductor |
Description: DIODE GP 50V 1A MELF DO-213AB Packaging: Strip Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: MELF DO-213AB Operating Temperature - Junction: -50°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
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BY255-AQ-CT | Diotec Semiconductor |
Description: DIODE GEN PURP 1.3KV 3A DO201 Packaging: Strip Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1300 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1.3 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 3 Voltage Coupled to Current - Reverse Leakage @ Vr: 1.3 |
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BY255-CT | Diotec Semiconductor |
Description: DIODE GEN PURP 1.3KV 3A DO201 Packaging: Strip Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1300 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1.3 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 3 Voltage Coupled to Current - Reverse Leakage @ Vr: 1.3 |
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P600M-CT | Diotec Semiconductor |
Description: DIODE GEN PURP 1KV 6A P600 Packaging: Strip Package / Case: P600, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: P600 Operating Temperature - Junction: -50°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A Current - Reverse Leakage @ Vr: 10 µA @ 1 V |
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BAV23CC | Diotec Semiconductor |
Description: DIODE ARRAY GP 200V 225MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 225mA Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V |
на замовлення 2934 шт: термін постачання 21-31 дні (днів) |
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1N4005GP-AQ-CT | Diotec Semiconductor |
Description: DIODE GEN PURP 600V 1A DO41 Packaging: Strip Package / Case: DO-204AC, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-41/DO-204AC Operating Temperature - Junction: -50°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
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BY2000-CT | Diotec Semiconductor |
Description: DIODE GEN PURP 2KV 3A DO201 Packaging: Strip Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 2 V |
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P600S-CT | Diotec Semiconductor |
Description: DIODE GEN PURP 1.2KV 6A P600 Packaging: Strip Package / Case: P600, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: P600 Operating Temperature - Junction: -50°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A Current - Reverse Leakage @ Vr: 10 µA @ 1.2 V |
на замовлення 13500 шт: термін постачання 21-31 дні (днів) |
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S16KSD2-CT | Diotec Semiconductor |
Description: DIODE GEN PURP 800V TO263AB Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
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SM516-CT | Diotec Semiconductor |
Description: DIODE GP 1.6KV 1A MELF DO-213AB Packaging: Strip Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: MELF DO-213AB Operating Temperature - Junction: -50°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1.6 V |
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SM518-CT | Diotec Semiconductor | Description: CUT-TAPE VERSION. STANDARD RECO |
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P600G-CT | Diotec Semiconductor |
Description: DIODE GEN PURP 400V 6A P600 Packaging: Strip Package / Case: P600, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: P600 Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
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SM4004-CT | Diotec Semiconductor |
Description: DIODE GP 400V 1A MELF DO-213AB Packaging: Strip Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: MELF DO-213AB Operating Temperature - Junction: -50°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
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BY251-CT | Diotec Semiconductor |
Description: DIODE GEN PURP 200V 3A DO201 Packaging: Strip Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 1675 шт: термін постачання 21-31 дні (днів) |
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BY252-CT | Diotec Semiconductor |
Description: DIODE GEN PURP 400V 3A DO201 Packaging: Strip Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
на замовлення 13600 шт: термін постачання 21-31 дні (днів) |
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BY253-CT | Diotec Semiconductor |
Description: DIODE GEN PURP 600V 3A DO201 Packaging: Strip Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 382500 шт: термін постачання 21-31 дні (днів) |
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BY254-CT | Diotec Semiconductor |
Description: DIODE GEN PURP 800V 3A DO201 Packaging: Strip Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
на замовлення 1425 шт: термін постачання 21-31 дні (днів) |
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P600D-CT | Diotec Semiconductor |
Description: DIODE GEN PURP 200V 6A P600 Packaging: Strip Package / Case: P600, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: P600 Operating Temperature - Junction: -50°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 90500 шт: термін постачання 21-31 дні (днів) |
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P600A-CT | Diotec Semiconductor | Description: DIODE GEN PURP 50V 6A P600 |
на замовлення 51000 шт: термін постачання 21-31 дні (днів) |
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P1000M-CT | Diotec Semiconductor |
Description: DIODE GEN PURP 1KV 10A P600 Packaging: Strip Package / Case: P600, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: P600 Operating Temperature - Junction: -50°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 1 V |
на замовлення 960 шт: термін постачання 21-31 дні (днів) |
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BY133-CT | Diotec Semiconductor |
Description: DIODE GEN PURP 1.3KV 1A DO41 Packaging: Strip Package / Case: DO-204AC, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-41/DO-204AC Operating Temperature - Junction: -50°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1.3 V |
на замовлення 4945 шт: термін постачання 21-31 дні (днів) |
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BYG10J-AQ-CT | Diotec Semiconductor | Description: DIODE AVAL 600V 1.5A DO214AC |
на замовлення 832500 шт: термін постачання 21-31 дні (днів) |
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SUF4007-CT | Diotec Semiconductor |
Description: DIODE GEN PURP 1KV 1A DO213AB Packaging: Strip Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB Operating Temperature - Junction: -50°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
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KBPC3510I | Diotec Semiconductor |
Description: 1PH BRIDGE KBPC 1000V 35A Packaging: Box Package / Case: 4-SIP, KBPC Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -50°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4-SIP Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
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KBPC2502I | Diotec Semiconductor |
Description: 1PH BRIDGE KBPC 200V 25A Packaging: Box Package / Case: 4-Square, KBPC25 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -50°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPC25 Part Status: Active Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 12.5 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
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KBPC2510I | Diotec Semiconductor |
Description: 1PH BRIDGE KBPC 1000V 25A Packaging: Box Package / Case: 4-Square, KBPC Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -50°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPC Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 12.5 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
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BCM847BS-AQ | Diotec Semiconductor |
Description: BJT SOT-363 45V 100MA Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-363 Part Status: Active |
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SUF4005-CT | Diotec Semiconductor |
Description: DIODE GEN PURP 600V 1A DO213AB Packaging: Strip Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB Operating Temperature - Junction: -50°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
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1.5SMCJ8.0CA | Diotec Semiconductor | Description: TRANSIENT VOLTAGE SUPPRESSOR DIO |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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P6SMBJ8.0A | Diotec Semiconductor | Description: TVS DIODE 8VWM 13.6VC SMB/DO214 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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P6SMBJ78 | Diotec Semiconductor | Description: TRANSIENT VOLTAGE SUPPRESSOR DIO |
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P6SMBJ78C | Diotec Semiconductor | Description: TRANSIENT VOLTAGE SUPPRESSOR DIO |
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P6SMBJ78CA-AQ | Diotec Semiconductor | Description: TRANSIENT VOLTAGE SUPPRESSOR DIO |
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BY397 | Diotec Semiconductor | Description: DIODE FR DO-201 200V 3A |
на замовлення 3400 шт: термін постачання 21-31 дні (днів) |
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ZMD51B | Diotec Semiconductor |
Description: DIODE ZENER 51V 1W DO213AA Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -50°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 51 V Impedance (Max) (Zzt): 70 Ohms Supplier Device Package: DO-213AA, MINI-MELF Part Status: Active Power - Max: 1 W Current - Reverse Leakage @ Vr: 500 nA @ 34 V |
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SMF200CA | Diotec Semiconductor | Description: TVS DIODE 200VWM 321VC SOD123F |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SUF4003-CT | Diotec Semiconductor |
Description: DIODE GEN PURP 200V 1A DO213AB Packaging: Strip Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB Operating Temperature - Junction: -50°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
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KBPC2501I | Diotec Semiconductor |
Description: 1PH BRIDGE KBPC 100V 25A Packaging: Box Package / Case: 4-Square, KBPC25 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -50°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPC25 Part Status: Active Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 12.5 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
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KBPC2508I | Diotec Semiconductor |
Description: 1PH BRIDGE KBPC 800V 25A Packaging: Box Package / Case: 4-Square, KBPC25 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -50°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPC25 Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 12.5 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
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TGL41-170A | Diotec Semiconductor |
Description: TVS DIODE 145VWM 234VC MELF Packaging: Tape & Reel (TR) Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Type: Zener Operating Temperature: -50°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 1.8A Voltage - Reverse Standoff (Typ): 145V Supplier Device Package: MELF DO-213AB (Plastic) Unidirectional Channels: 1 Voltage - Breakdown (Min): 162V Voltage - Clamping (Max) @ Ipp: 234V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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Z2SMB75 | Diotec Semiconductor | Description: DIODE ZENER 75V 2W SMB |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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ZMY16 | Diotec Semiconductor |
Description: DIODE ZENER 16V 1.3W MELF Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 6 Ohms Supplier Device Package: MELF DO-213AB Part Status: Active Power - Max: 1.3 W Current - Reverse Leakage @ Vr: 1 µA @ 10 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SMZ16 | Diotec Semiconductor | Description: ZENER DIODE, DO-213AB/MELF, 15.3 |
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SZ3C16 | Diotec Semiconductor |
Description: DIODE ZENER 16V 3W MELF Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 6 Ohms Supplier Device Package: MELF DO-213AB Part Status: Active Power - Max: 3 W Current - Reverse Leakage @ Vr: 1 µA @ 10 V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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ZPD22 | Diotec Semiconductor | Description: DIODE ZENER 22V 500MW DO35 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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KBPC3501FP | Diotec Semiconductor |
Description: 1PH BRIDGE KBPC 100V 35A Packaging: Box Package / Case: 4-Square, KBPC35 Mounting Type: Chassis Mount Diode Type: Single Phase Operating Temperature: -50°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPC35 Part Status: Active Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
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KBPC3501I | Diotec Semiconductor |
Description: 1PH BRIDGE KBPC 100V 35A Packaging: Box Package / Case: 4-SIP, KBPC Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -50°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4-SIP Part Status: Active Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
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KBPC3508I | Diotec Semiconductor |
Description: 1PH BRIDGE KBPC 800V 35A Packaging: Box Package / Case: 4-SIP, KBPC Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -50°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4-SIP Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
товар відсутній |
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KBPC3504I | Diotec Semiconductor |
Description: 1PH BRIDGE KBPC 400V 35A Packaging: Box Package / Case: 4-SIP, KBPC Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -50°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4-SIP Part Status: Active Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
товар відсутній |
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KBPC3506I | Diotec Semiconductor |
Description: 1PH BRIDGE KBPC 600V 35A Packaging: Box Package / Case: 4-SIP, KBPC Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -50°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4-SIP Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товар відсутній |
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KBPC3502I | Diotec Semiconductor |
Description: 1PH BRIDGE KBPC 200V 35A Packaging: Box Package / Case: 4-SIP, KBPC Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -50°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4-SIP Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
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30CTQ200 | Diotec Semiconductor |
Description: SCHOTTKY TO-220AB 200V 15A Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-220AB Operating Temperature - Junction: -50°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 860 mV @ 15 A Current - Reverse Leakage @ Vr: 50 µA @ 200 V |
товар відсутній |
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BZW04-376 | Diotec Semiconductor |
Description: TVS DIODE 376VWM 603VC DO15 Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -50°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 800mA Voltage - Reverse Standoff (Typ): 376V Supplier Device Package: DO-15 (DO-204AC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 418V Voltage - Clamping (Max) @ Ipp: 603V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active |
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1.5SMCJ13A | Diotec Semiconductor | Description: TRANSIENT VOLTAGE SUPPRESSOR DIO |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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1.5SMCJ13A-AQ | Diotec Semiconductor | Description: TRANSIENT VOLTAGE SUPPRESSOR DIO |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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3.0SMCJ13A | Diotec Semiconductor | Description: TVS DIODE 13VWM 21.5VC SMC |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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3.0SMCJ13A-AQ | Diotec Semiconductor | Description: TRANSIENT VOLTAGE SUPPRESSOR DIO |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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KBPC2506I | Diotec Semiconductor |
Description: 1PH BRIDGE KBPC 600V 25A Packaging: Box Package / Case: 4-Square, KBPC25 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -50°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPC25 Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 12.5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товар відсутній |
2N5551 (транзистор біполярний NPN) Код товару: 31024 |
Виробник: DIOTEC SEMICONDUCTOR
Транзистори > Біполярні NPN
Корпус: TO-92
fT: 300 MHz
Uceo,V: 160 V
Ucbo,V: 180 V
Ic,A: 0,6 A
h21: 250
Монтаж: THT
Транзистори > Біполярні NPN
Корпус: TO-92
fT: 300 MHz
Uceo,V: 160 V
Ucbo,V: 180 V
Ic,A: 0,6 A
h21: 250
Монтаж: THT
товар відсутній
SM4007-CT |
Виробник: Diotec Semiconductor
Description: DIODE GP 1KV 1A MELF DO-213AB
Packaging: Strip
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF DO-213AB
Operating Temperature - Junction: -50°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Description: DIODE GP 1KV 1A MELF DO-213AB
Packaging: Strip
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF DO-213AB
Operating Temperature - Junction: -50°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
товар відсутній
SM4001-CT |
Виробник: Diotec Semiconductor
Description: DIODE GP 50V 1A MELF DO-213AB
Packaging: Strip
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF DO-213AB
Operating Temperature - Junction: -50°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: DIODE GP 50V 1A MELF DO-213AB
Packaging: Strip
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF DO-213AB
Operating Temperature - Junction: -50°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
BY255-AQ-CT |
Виробник: Diotec Semiconductor
Description: DIODE GEN PURP 1.3KV 3A DO201
Packaging: Strip
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1.3 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 3
Voltage Coupled to Current - Reverse Leakage @ Vr: 1.3
Description: DIODE GEN PURP 1.3KV 3A DO201
Packaging: Strip
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1.3 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 3
Voltage Coupled to Current - Reverse Leakage @ Vr: 1.3
товар відсутній
BY255-CT |
Виробник: Diotec Semiconductor
Description: DIODE GEN PURP 1.3KV 3A DO201
Packaging: Strip
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1.3 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 3
Voltage Coupled to Current - Reverse Leakage @ Vr: 1.3
Description: DIODE GEN PURP 1.3KV 3A DO201
Packaging: Strip
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1.3 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 3
Voltage Coupled to Current - Reverse Leakage @ Vr: 1.3
товар відсутній
P600M-CT |
Виробник: Diotec Semiconductor
Description: DIODE GEN PURP 1KV 6A P600
Packaging: Strip
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Description: DIODE GEN PURP 1KV 6A P600
Packaging: Strip
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
товар відсутній
BAV23CC |
Виробник: Diotec Semiconductor
Description: DIODE ARRAY GP 200V 225MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 225mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Description: DIODE ARRAY GP 200V 225MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 225mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
на замовлення 2934 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
30+ | 13.29 грн |
60+ | 9.91 грн |
120+ | 8.54 грн |
300+ | 5.71 грн |
750+ | 3.81 грн |
1200+ | 3.32 грн |
1500+ | 2.93 грн |
1N4005GP-AQ-CT |
Виробник: Diotec Semiconductor
Description: DIODE GEN PURP 600V 1A DO41
Packaging: Strip
Package / Case: DO-204AC, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41/DO-204AC
Operating Temperature - Junction: -50°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 1A DO41
Packaging: Strip
Package / Case: DO-204AC, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41/DO-204AC
Operating Temperature - Junction: -50°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
BY2000-CT |
Виробник: Diotec Semiconductor
Description: DIODE GEN PURP 2KV 3A DO201
Packaging: Strip
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Description: DIODE GEN PURP 2KV 3A DO201
Packaging: Strip
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
товар відсутній
P600S-CT |
Виробник: Diotec Semiconductor
Description: DIODE GEN PURP 1.2KV 6A P600
Packaging: Strip
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 1.2 V
Description: DIODE GEN PURP 1.2KV 6A P600
Packaging: Strip
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 1.2 V
на замовлення 13500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
250+ | 99.6 грн |
500+ | 50.78 грн |
1000+ | 27.65 грн |
2000+ | 25.69 грн |
S16KSD2-CT |
Виробник: Diotec Semiconductor
Description: DIODE GEN PURP 800V TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE GEN PURP 800V TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
SM516-CT |
Виробник: Diotec Semiconductor
Description: DIODE GP 1.6KV 1A MELF DO-213AB
Packaging: Strip
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF DO-213AB
Operating Temperature - Junction: -50°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1.6 V
Description: DIODE GP 1.6KV 1A MELF DO-213AB
Packaging: Strip
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF DO-213AB
Operating Temperature - Junction: -50°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1.6 V
товар відсутній
P600G-CT |
Виробник: Diotec Semiconductor
Description: DIODE GEN PURP 400V 6A P600
Packaging: Strip
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 6A P600
Packaging: Strip
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
SM4004-CT |
Виробник: Diotec Semiconductor
Description: DIODE GP 400V 1A MELF DO-213AB
Packaging: Strip
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF DO-213AB
Operating Temperature - Junction: -50°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GP 400V 1A MELF DO-213AB
Packaging: Strip
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF DO-213AB
Operating Temperature - Junction: -50°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
BY251-CT |
Виробник: Diotec Semiconductor
Description: DIODE GEN PURP 200V 3A DO201
Packaging: Strip
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 3A DO201
Packaging: Strip
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 1675 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 17.32 грн |
50+ | 12.35 грн |
100+ | 10.65 грн |
250+ | 7.13 грн |
500+ | 5.94 грн |
1000+ | 5.22 грн |
1500+ | 4.76 грн |
BY252-CT |
Виробник: Diotec Semiconductor
Description: DIODE GEN PURP 400V 3A DO201
Packaging: Strip
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 3A DO201
Packaging: Strip
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 13600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
425+ | 42.6 грн |
850+ | 17.53 грн |
1700+ | 5.67 грн |
3400+ | 5.26 грн |
BY253-CT |
Виробник: Diotec Semiconductor
Description: DIODE GEN PURP 600V 3A DO201
Packaging: Strip
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 3A DO201
Packaging: Strip
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 382500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
425+ | 39.23 грн |
850+ | 16.14 грн |
1700+ | 5.22 грн |
3400+ | 4.85 грн |
BY254-CT |
Виробник: Diotec Semiconductor
Description: DIODE GEN PURP 800V 3A DO201
Packaging: Strip
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE GEN PURP 800V 3A DO201
Packaging: Strip
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 1425 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 17.32 грн |
50+ | 12.94 грн |
100+ | 11.16 грн |
250+ | 7.47 грн |
500+ | 6.23 грн |
1000+ | 5.47 грн |
P600D-CT |
Виробник: Diotec Semiconductor
Description: DIODE GEN PURP 200V 6A P600
Packaging: Strip
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 6A P600
Packaging: Strip
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 90500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
250+ | 68.29 грн |
500+ | 28.51 грн |
1000+ | 9.69 грн |
2000+ | 9 грн |
P600A-CT |
Виробник: Diotec Semiconductor
Description: DIODE GEN PURP 50V 6A P600
Description: DIODE GEN PURP 50V 6A P600
на замовлення 51000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
250+ | 72.51 грн |
500+ | 30.52 грн |
1000+ | 10.65 грн |
2000+ | 9.89 грн |
P1000M-CT |
Виробник: Diotec Semiconductor
Description: DIODE GEN PURP 1KV 10A P600
Packaging: Strip
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Description: DIODE GEN PURP 1KV 10A P600
Packaging: Strip
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
на замовлення 960 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 142.92 грн |
20+ | 118.63 грн |
40+ | 102.27 грн |
80+ | 85.6 грн |
160+ | 71.34 грн |
320+ | 58.37 грн |
640+ | 34.29 грн |
BY133-CT |
Виробник: Diotec Semiconductor
Description: DIODE GEN PURP 1.3KV 1A DO41
Packaging: Strip
Package / Case: DO-204AC, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41/DO-204AC
Operating Temperature - Junction: -50°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1.3 V
Description: DIODE GEN PURP 1.3KV 1A DO41
Packaging: Strip
Package / Case: DO-204AC, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41/DO-204AC
Operating Temperature - Junction: -50°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1.3 V
на замовлення 4945 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 17.21 грн |
50+ | 9.98 грн |
100+ | 7.3 грн |
200+ | 6.33 грн |
400+ | 5.27 грн |
800+ | 4.39 грн |
1600+ | 3.53 грн |
3200+ | 2.11 грн |
BYG10J-AQ-CT |
Виробник: Diotec Semiconductor
Description: DIODE AVAL 600V 1.5A DO214AC
Description: DIODE AVAL 600V 1.5A DO214AC
на замовлення 832500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1875+ | 19.54 грн |
3750+ | 10.66 грн |
7500+ | 6.45 грн |
15000+ | 6 грн |
SUF4007-CT |
Виробник: Diotec Semiconductor
Description: DIODE GEN PURP 1KV 1A DO213AB
Packaging: Strip
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -50°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Description: DIODE GEN PURP 1KV 1A DO213AB
Packaging: Strip
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -50°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
товар відсутній
KBPC3510I |
Виробник: Diotec Semiconductor
Description: 1PH BRIDGE KBPC 1000V 35A
Packaging: Box
Package / Case: 4-SIP, KBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SIP
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: 1PH BRIDGE KBPC 1000V 35A
Packaging: Box
Package / Case: 4-SIP, KBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SIP
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товар відсутній
KBPC2502I |
Виробник: Diotec Semiconductor
Description: 1PH BRIDGE KBPC 200V 25A
Packaging: Box
Package / Case: 4-Square, KBPC25
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC25
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: 1PH BRIDGE KBPC 200V 25A
Packaging: Box
Package / Case: 4-Square, KBPC25
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC25
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
KBPC2510I |
Виробник: Diotec Semiconductor
Description: 1PH BRIDGE KBPC 1000V 25A
Packaging: Box
Package / Case: 4-Square, KBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: 1PH BRIDGE KBPC 1000V 25A
Packaging: Box
Package / Case: 4-Square, KBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товар відсутній
BCM847BS-AQ |
Виробник: Diotec Semiconductor
Description: BJT SOT-363 45V 100MA
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-363
Part Status: Active
Description: BJT SOT-363 45V 100MA
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-363
Part Status: Active
товар відсутній
SUF4005-CT |
Виробник: Diotec Semiconductor
Description: DIODE GEN PURP 600V 1A DO213AB
Packaging: Strip
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -50°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 1A DO213AB
Packaging: Strip
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -50°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
1.5SMCJ8.0CA |
Виробник: Diotec Semiconductor
Description: TRANSIENT VOLTAGE SUPPRESSOR DIO
Description: TRANSIENT VOLTAGE SUPPRESSOR DIO
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 17.39 грн |
P6SMBJ8.0A |
Виробник: Diotec Semiconductor
Description: TVS DIODE 8VWM 13.6VC SMB/DO214
Description: TVS DIODE 8VWM 13.6VC SMB/DO214
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 6.78 грн |
P6SMBJ78 |
Виробник: Diotec Semiconductor
Description: TRANSIENT VOLTAGE SUPPRESSOR DIO
Description: TRANSIENT VOLTAGE SUPPRESSOR DIO
товар відсутній
P6SMBJ78C |
Виробник: Diotec Semiconductor
Description: TRANSIENT VOLTAGE SUPPRESSOR DIO
Description: TRANSIENT VOLTAGE SUPPRESSOR DIO
товар відсутній
P6SMBJ78CA-AQ |
Виробник: Diotec Semiconductor
Description: TRANSIENT VOLTAGE SUPPRESSOR DIO
Description: TRANSIENT VOLTAGE SUPPRESSOR DIO
товар відсутній
BY397 |
Виробник: Diotec Semiconductor
Description: DIODE FR DO-201 200V 3A
Description: DIODE FR DO-201 200V 3A
на замовлення 3400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1700+ | 6.27 грн |
ZMD51B |
Виробник: Diotec Semiconductor
Description: DIODE ZENER 51V 1W DO213AA
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-213AA, MINI-MELF
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 34 V
Description: DIODE ZENER 51V 1W DO213AA
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-213AA, MINI-MELF
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 34 V
товар відсутній
SMF200CA |
Виробник: Diotec Semiconductor
Description: TVS DIODE 200VWM 321VC SOD123F
Description: TVS DIODE 200VWM 321VC SOD123F
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 6.24 грн |
SUF4003-CT |
Виробник: Diotec Semiconductor
Description: DIODE GEN PURP 200V 1A DO213AB
Packaging: Strip
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -50°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 1A DO213AB
Packaging: Strip
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -50°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
KBPC2501I |
Виробник: Diotec Semiconductor
Description: 1PH BRIDGE KBPC 100V 25A
Packaging: Box
Package / Case: 4-Square, KBPC25
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC25
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: 1PH BRIDGE KBPC 100V 25A
Packaging: Box
Package / Case: 4-Square, KBPC25
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC25
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
KBPC2508I |
Виробник: Diotec Semiconductor
Description: 1PH BRIDGE KBPC 800V 25A
Packaging: Box
Package / Case: 4-Square, KBPC25
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC25
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: 1PH BRIDGE KBPC 800V 25A
Packaging: Box
Package / Case: 4-Square, KBPC25
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC25
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
TGL41-170A |
Виробник: Diotec Semiconductor
Description: TVS DIODE 145VWM 234VC MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.8A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: MELF DO-213AB (Plastic)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 145VWM 234VC MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.8A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: MELF DO-213AB (Plastic)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 6.19 грн |
Z2SMB75 |
Виробник: Diotec Semiconductor
Description: DIODE ZENER 75V 2W SMB
Description: DIODE ZENER 75V 2W SMB
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)ZMY16 |
Виробник: Diotec Semiconductor
Description: DIODE ZENER 16V 1.3W MELF
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: MELF DO-213AB
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Description: DIODE ZENER 16V 1.3W MELF
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: MELF DO-213AB
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 5.45 грн |
SZ3C16 |
Виробник: Diotec Semiconductor
Description: DIODE ZENER 16V 3W MELF
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: MELF DO-213AB
Part Status: Active
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Description: DIODE ZENER 16V 3W MELF
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: MELF DO-213AB
Part Status: Active
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 8.08 грн |
ZPD22 |
Виробник: Diotec Semiconductor
Description: DIODE ZENER 22V 500MW DO35
Description: DIODE ZENER 22V 500MW DO35
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)KBPC3501FP |
Виробник: Diotec Semiconductor
Description: 1PH BRIDGE KBPC 100V 35A
Packaging: Box
Package / Case: 4-Square, KBPC35
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC35
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: 1PH BRIDGE KBPC 100V 35A
Packaging: Box
Package / Case: 4-Square, KBPC35
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC35
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
KBPC3501I |
Виробник: Diotec Semiconductor
Description: 1PH BRIDGE KBPC 100V 35A
Packaging: Box
Package / Case: 4-SIP, KBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SIP
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: 1PH BRIDGE KBPC 100V 35A
Packaging: Box
Package / Case: 4-SIP, KBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SIP
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
KBPC3508I |
Виробник: Diotec Semiconductor
Description: 1PH BRIDGE KBPC 800V 35A
Packaging: Box
Package / Case: 4-SIP, KBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SIP
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: 1PH BRIDGE KBPC 800V 35A
Packaging: Box
Package / Case: 4-SIP, KBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SIP
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
KBPC3504I |
Виробник: Diotec Semiconductor
Description: 1PH BRIDGE KBPC 400V 35A
Packaging: Box
Package / Case: 4-SIP, KBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SIP
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: 1PH BRIDGE KBPC 400V 35A
Packaging: Box
Package / Case: 4-SIP, KBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SIP
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
KBPC3506I |
Виробник: Diotec Semiconductor
Description: 1PH BRIDGE KBPC 600V 35A
Packaging: Box
Package / Case: 4-SIP, KBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SIP
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: 1PH BRIDGE KBPC 600V 35A
Packaging: Box
Package / Case: 4-SIP, KBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SIP
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
KBPC3502I |
Виробник: Diotec Semiconductor
Description: 1PH BRIDGE KBPC 200V 35A
Packaging: Box
Package / Case: 4-SIP, KBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SIP
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: 1PH BRIDGE KBPC 200V 35A
Packaging: Box
Package / Case: 4-SIP, KBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SIP
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
30CTQ200 |
Виробник: Diotec Semiconductor
Description: SCHOTTKY TO-220AB 200V 15A
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -50°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Description: SCHOTTKY TO-220AB 200V 15A
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -50°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
товар відсутній
BZW04-376 |
Виробник: Diotec Semiconductor
Description: TVS DIODE 376VWM 603VC DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -50°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 800mA
Voltage - Reverse Standoff (Typ): 376V
Supplier Device Package: DO-15 (DO-204AC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 418V
Voltage - Clamping (Max) @ Ipp: 603V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 376VWM 603VC DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -50°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 800mA
Voltage - Reverse Standoff (Typ): 376V
Supplier Device Package: DO-15 (DO-204AC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 418V
Voltage - Clamping (Max) @ Ipp: 603V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
товар відсутній
1.5SMCJ13A |
Виробник: Diotec Semiconductor
Description: TRANSIENT VOLTAGE SUPPRESSOR DIO
Description: TRANSIENT VOLTAGE SUPPRESSOR DIO
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 20.83 грн |
1.5SMCJ13A-AQ |
Виробник: Diotec Semiconductor
Description: TRANSIENT VOLTAGE SUPPRESSOR DIO
Description: TRANSIENT VOLTAGE SUPPRESSOR DIO
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 26.1 грн |
3.0SMCJ13A |
Виробник: Diotec Semiconductor
Description: TVS DIODE 13VWM 21.5VC SMC
Description: TVS DIODE 13VWM 21.5VC SMC
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 31.13 грн |
3.0SMCJ13A-AQ |
Виробник: Diotec Semiconductor
Description: TRANSIENT VOLTAGE SUPPRESSOR DIO
Description: TRANSIENT VOLTAGE SUPPRESSOR DIO
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 45.67 грн |
KBPC2506I |
Виробник: Diotec Semiconductor
Description: 1PH BRIDGE KBPC 600V 25A
Packaging: Box
Package / Case: 4-Square, KBPC25
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC25
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: 1PH BRIDGE KBPC 600V 25A
Packaging: Box
Package / Case: 4-Square, KBPC25
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC25
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній