| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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BU2508AF | EVVO |
Description: TO-3PF NPN SILICON POWER TRANSIS |
на замовлення 209 шт: термін постачання 21-31 дні (днів) |
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BU2527AF | EVVO |
Description: SILICON NPN POWER TRANSISTORS,TO |
на замовлення 210 шт: термін постачання 21-31 дні (днів) |
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BU508A | EVVO |
Description: SILICON NPN POWER TRANSISTORS,TO |
на замовлення 194 шт: термін постачання 21-31 дні (днів) |
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BU508AF | EVVO |
Description: SILICON NPN POWER TRANSISTORS,TO |
на замовлення 210 шт: термін постачання 21-31 дні (днів) |
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BU508D | EVVO |
Description: NPN POWER TRANSISTORS(8A,1500V,1 |
на замовлення 210 шт: термін постачання 21-31 дні (днів) |
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BU508DF | EVVO |
Description: SILICON NPN POWER TRANSISTORS,TO |
на замовлення 210 шт: термін постачання 21-31 дні (днів) |
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BUH515 | EVVO |
Description: SILICON NPN POWER TRANSISTOR, TO |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZX84C3V3A | EVVO |
Description: DIODE ZENER 3.3V 350MW SOT23Tolerance: ±6.06% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 130 Ohms Supplier Device Package: SOT-23 Power - Max: 350 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 20 µA @ 1 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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BZX84C3V3A | EVVO |
Description: DIODE ZENER 3.3V 350MW SOT23Tolerance: ±6.06% Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 130 Ohms Supplier Device Package: SOT-23 Power - Max: 350 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 20 µA @ 1 V |
на замовлення 2996 шт: термін постачання 21-31 дні (днів) |
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BZX84C3V6A | EVVO |
Description: DIODE ZENER 3.6V 350MW SOT23Packaging: Cut Tape (CT) Tolerance: ±5.56% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.6 V Impedance (Max) (Zzt): 130 Ohms Supplier Device Package: SOT-23 Power - Max: 350 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 10 µA @ 1 V |
на замовлення 2790 шт: термін постачання 21-31 дні (днів) |
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BZX84C3V6A | EVVO |
Description: DIODE ZENER 3.6V 350MW SOT23Packaging: Tape & Reel (TR) Tolerance: ±5.56% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.6 V Impedance (Max) (Zzt): 130 Ohms Supplier Device Package: SOT-23 Power - Max: 350 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 10 µA @ 1 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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BZX84C5V6A | EVVO |
Description: DIODE ZENER 5.6V 350MW SOT23Tolerance: ±7.14% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOT-23 Power - Max: 350 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BZX84C5V6A | EVVO |
Description: DIODE ZENER 5.6V 350MW SOT23Tolerance: ±7.14% Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOT-23 Power - Max: 350 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V |
на замовлення 2998 шт: термін постачання 21-31 дні (днів) |
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D15XB100 | EVVO |
Description: DIODE RECTIFIER BRIDGE SINGLE 10Packaging: Box Package / Case: 4-SIP, 5S Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 5s Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
на замовлення 188 шт: термін постачання 21-31 дні (днів) |
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D15XB60 | EVVO |
Description: DIODE RECTIFIER BRIDGE SINGLE 60Packaging: Box Package / Case: 4-SIP, 5S Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 5s Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 690 шт: термін постачання 21-31 дні (днів) |
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D15XB80 | EVVO |
Description: DIODE RECTIFIER BRIDGE SINGLE 80Packaging: Box Package / Case: 4-SIP, 5S Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 5s Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
на замовлення 256 шт: термін постачання 21-31 дні (днів) |
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DB104 | EVVO |
Description: BRIDGE DIODE 1A 400V DFM DB |
на замовлення 1375 шт: термін постачання 21-31 дні (днів) |
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DB107 | EVVO |
Description: BRIDGE DIODE 1A 1000V DFM DB |
на замовлення 1982 шт: термін постачання 21-31 дні (днів) |
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DB201S | EVVO |
Description: BRIDGE RECT 1PHASE 1KV 2A DBSPackaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DBS Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
на замовлення 1448 шт: термін постачання 21-31 дні (днів) |
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DB201S | EVVO |
Description: BRIDGE RECT 1PHASE 1KV 2A DBSPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DBS Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||||
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DB207S | EVVO |
Description: BRIDGE RECT 1PHASE 1KV 2A DBS |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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DB207S | EVVO |
Description: BRIDGE RECT 1PHASE 1KV 2A DBS |
на замовлення 1489 шт: термін постачання 21-31 дні (днів) |
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DMG2305UX-EV | EVVO |
Description: MOSFET P-CH 20V 4.2A SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V Power Dissipation (Max): 1.4W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 886.6 pF @ 10 V |
на замовлення 1239 шт: термін постачання 21-31 дні (днів) |
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DMG2305UX-EV | EVVO |
Description: MOSFET P-CH 20V 4.2A SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V Power Dissipation (Max): 1.4W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 886.6 pF @ 10 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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DS18B20A05 | EVVO |
Description: TEMPERATURE SENSORS -55~+125 1.2Packaging: Bag |
на замовлення 807 шт: термін постачання 21-31 дні (днів) |
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DS18B20A10 | EVVO |
Description: TEMPERATURE SENSORS -55~+125 1.2Features: Standby Mode Packaging: Bag Package / Case: Cylindrical Probe, Stainless Steel Output Type: 1-Wire® Mounting Type: Free Hanging Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2.5V ~ 5.5V Sensor Type: Digital Resolution: 12 b Test Condition: -55°C ~ 125°C Accuracy - Highest (Lowest): ±0.4°C Sensing Temperature - Local: -55°C ~ 125°C |
на замовлення 595 шт: термін постачання 21-31 дні (днів) |
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DS18B20A15 | EVVO |
Description: TEMPERATURE SENSORS -55~+125 1.2Packaging: Bag Temperature Range: -55°C ~ 125°C Terminal Type: Exposed Lead Wires Length - Lead Wire: 4.921' (1.5m) Element Type: Temperature Probe Conductor Type: 3 Conductor System |
на замовлення 269 шт: термін постачання 21-31 дні (днів) |
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DS18B20A20 | EVVO |
Description: TEMPERATURE SENSORS -55~+125 1.2Packaging: Bag Temperature Range: -55°C ~ 125°C Terminal Type: Exposed Lead Wires Length - Lead Wire: 6.562' (2m) Element Type: Temperature Probe Conductor Type: 3 Conductor System |
на замовлення 107 шт: термін постачання 21-31 дні (днів) |
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DS18B20A30 | EVVO |
Description: TEMPERATURE SENSORS -55~+125 1.2Packaging: Bag Features: Output Switch, Programmable Limit, Programmable Resolution, Standby Mode Package / Case: Cylindrical Probe, Stainless Steel Output Type: 1-Wire® Mounting Type: Free Hanging Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2.5V ~ 5.5V Sensor Type: Digital, Local/Remote Resolution: 12 b Test Condition: -10°C ~ 85°C (-55°C ~ 125°C) Sensing Temperature - Local: -55°C ~ 125°C Sensing Temperature - Remote: -55°C ~ 125°C Accuracy - Highest (Lowest): ±0.4°C (±1.2°C) |
на замовлення 232 шт: термін постачання 21-31 дні (днів) |
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DS18B20A50 | EVVO |
Description: TEMPERATURE SENSORS -55~+125 1.2Packaging: Bag Temperature Range: -55°C ~ 125°C Terminal Type: Exposed Lead Wires Length - Lead Wire: 16.404' (5m) Element Type: Temperature Probe Conductor Type: 3 Conductor System |
на замовлення 86 шт: термін постачання 21-31 дні (днів) |
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DS18B20-EV | EVVO |
Description: SENSOR DIGITAL -55C-125C TO92Features: Standby Mode Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Output Type: 1-Wire® Mounting Type: Through Hole Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2.5V ~ 5.5V Sensor Type: Digital Resolution: 12 b Supplier Device Package: TO-92 Test Condition: -55°C ~ 125°C Accuracy - Highest (Lowest): ±0.4°C Sensing Temperature - Local: -55°C ~ 125°C |
на замовлення 5681 шт: термін постачання 21-31 дні (днів) |
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DS210W | EVVO |
Description: DIODE SCHOTTKY 100V 2A SOD123FLPackaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 80pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A Current - Reverse Leakage @ Vr: 300 µA @ 100 V |
на замовлення 835 шт: термін постачання 21-31 дні (днів) |
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DS210W | EVVO |
Description: DIODE SCHOTTKY 100V 2A SOD123FLPackaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 80pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A Current - Reverse Leakage @ Vr: 300 µA @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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ES1D | EVVO |
Description: DIODE STANDARD 200V 1A SMA |
на замовлення 17 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
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ES1D | EVVO |
Description: DIODE STANDARD 200V 1A SMA |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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FDC5614P-EV | EVVO |
Description: MOSFET P-CH 60V 3A SOT-23-6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Supplier Device Package: SOT-23-6 |
на замовлення 2900 шт: термін постачання 21-31 дні (днів) |
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FDC5614P-EV | EVVO |
Description: MOSFET P-CH 60V 3A SOT-23-6Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Supplier Device Package: SOT-23-6 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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FDN304P-EV | EVVO |
Description: MOSFET P-CH 20V 2.4A SOT-23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 2.4A, 4.5V Power Dissipation (Max): 460mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1312 pF @ 10 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FDN304P-EV | EVVO |
Description: MOSFET P-CH 20V 2.4A SOT-23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 2.4A, 4.5V Power Dissipation (Max): 460mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1312 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDN335N-EV | EVVO |
Description: MOSFET N-CH 20V 1.7A SOT-23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 1.7A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDN335N-EV | EVVO |
Description: MOSFET N-CH 20V 1.7A SOT-23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 1.7A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 10 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FDN337N-EV | EVVO |
Description: MOSFET N-CH 30V 2.2A SOT-23Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 460mW (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 2.2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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FDN337N-EV | EVVO |
Description: MOSFET N-CH 30V 2.2A SOT-23Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 460mW (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 2.2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 1773 шт: термін постачання 21-31 дні (днів) |
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FDN338P-EV | EVVO |
Description: MOSFET P-CH 20V 1.6A SOT-23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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FDN338P-EV | EVVO |
Description: MOSFET P-CH 20V 1.6A SOT-23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V |
на замовлення 2950 шт: термін постачання 21-31 дні (днів) |
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FDN340P-EV | EVVO |
Description: MOSFET P-CH 20V 2A SOT-23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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FDN340P-EV | EVVO |
Description: MOSFET P-CH 20V 2A SOT-23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V |
на замовлення 1554 шт: термін постачання 21-31 дні (днів) |
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FDV304P-EV | EVVO |
Description: MOSFET P-CH 25V SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 954 pF @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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FDV304P-EV | EVVO |
Description: MOSFET P-CH 25V SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 954 pF @ 15 V |
на замовлення 1520 шт: термін постачання 21-31 дні (днів) |
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FMMT491 | EVVO |
Description: TRANS NPN 60V 1A SOT-23 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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FMMT491 | EVVO |
Description: TRANS NPN 60V 1A SOT-23 |
на замовлення 182 шт: термін постачання 21-31 дні (днів) |
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FR107 | EVVO |
Description: DIODE GEN PURP 1KV 1APackaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FR107 | EVVO |
Description: DIODE GEN PURP 1KV 1APackaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 2633 шт: термін постачання 21-31 дні (днів) |
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FS8205A | EVVO |
Description: DUAL N-CHANNEL ENHANCEMENT MODEPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel, Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 20V Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 17.6nC @ 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-6 |
на замовлення 1776 шт: термін постачання 21-31 дні (днів) |
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FS8205A | EVVO |
Description: DUAL N-CHANNEL ENHANCEMENT MODEPackaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel, Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 20V Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 17.6nC @ 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-6 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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GBJ1508 | EVVO |
Description: BRIDGE RECT 1PHASE 800V 15A GBJPackaging: Box Package / Case: 4-ESIP, GBJ Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBJ Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
на замовлення 205 шт: термін постачання 21-31 дні (днів) |
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GBJ1510 | EVVO |
Description: BRIDGE RECT 1PHASE 1KV 15A GBJ |
на замовлення 247 шт: термін постачання 21-31 дні (днів) |
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GBJ2508 | EVVO |
Description: BRIDGE RECT 1PHASE 800V 25A GBJPackaging: Box Package / Case: 4-ESIP, GBJ Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBJ Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
на замовлення 1913 шт: термін постачання 21-31 дні (днів) |
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GBJ2510 | EVVO |
Description: BRIDGE RECT 1PHASE 1KV 25A GBJ |
на замовлення 104 шт: термін постачання 21-31 дні (днів) |
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GBJ3508 | EVVO |
Description: BRIDGE RECT 1PHASE 800V 35A GBJ |
на замовлення 61 шт: термін постачання 21-31 дні (днів) |
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| BU2508AF |
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Виробник: EVVO
Description: TO-3PF NPN SILICON POWER TRANSIS
Description: TO-3PF NPN SILICON POWER TRANSIS
на замовлення 209 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 437.51 грн |
| 10+ | 282.95 грн |
| BU2527AF |
![]() |
Виробник: EVVO
Description: SILICON NPN POWER TRANSISTORS,TO
Description: SILICON NPN POWER TRANSISTORS,TO
на замовлення 210 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 901.13 грн |
| 10+ | 606.14 грн |
| 210+ | 433.01 грн |
| BU508A |
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Виробник: EVVO
Description: SILICON NPN POWER TRANSISTORS,TO
Description: SILICON NPN POWER TRANSISTORS,TO
на замовлення 194 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 614.73 грн |
| 10+ | 403.94 грн |
| BU508AF |
![]() |
Виробник: EVVO
Description: SILICON NPN POWER TRANSISTORS,TO
Description: SILICON NPN POWER TRANSISTORS,TO
на замовлення 210 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 365.52 грн |
| 10+ | 233.74 грн |
| 210+ | 152.15 грн |
| BU508D |
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Виробник: EVVO
Description: NPN POWER TRANSISTORS(8A,1500V,1
Description: NPN POWER TRANSISTORS(8A,1500V,1
на замовлення 210 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 436.72 грн |
| 10+ | 282.27 грн |
| 210+ | 186.98 грн |
| BU508DF |
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Виробник: EVVO
Description: SILICON NPN POWER TRANSISTORS,TO
Description: SILICON NPN POWER TRANSISTORS,TO
на замовлення 210 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 373.43 грн |
| 10+ | 238.77 грн |
| 210+ | 155.40 грн |
| BUH515 |
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Виробник: EVVO
Description: SILICON NPN POWER TRANSISTOR, TO
Description: SILICON NPN POWER TRANSISTOR, TO
товару немає в наявності
В кошику
од. на суму грн.
| BZX84C3V3A |
![]() |
Виробник: EVVO
Description: DIODE ZENER 3.3V 350MW SOT23
Tolerance: ±6.06%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Description: DIODE ZENER 3.3V 350MW SOT23
Tolerance: ±6.06%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BZX84C3V3A |
![]() |
Виробник: EVVO
Description: DIODE ZENER 3.3V 350MW SOT23
Tolerance: ±6.06%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Description: DIODE ZENER 3.3V 350MW SOT23
Tolerance: ±6.06%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
на замовлення 2996 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.66 грн |
| 41+ | 7.47 грн |
| 58+ | 5.33 грн |
| 100+ | 4.33 грн |
| 500+ | 3.15 грн |
| BZX84C3V6A |
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Виробник: EVVO
Description: DIODE ZENER 3.6V 350MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±5.56%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Description: DIODE ZENER 3.6V 350MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±5.56%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
на замовлення 2790 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.66 грн |
| 41+ | 7.47 грн |
| 58+ | 5.33 грн |
| 100+ | 4.33 грн |
| 500+ | 3.15 грн |
| BZX84C3V6A |
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Виробник: EVVO
Description: DIODE ZENER 3.6V 350MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±5.56%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Description: DIODE ZENER 3.6V 350MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±5.56%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BZX84C5V6A |
![]() |
Виробник: EVVO
Description: DIODE ZENER 5.6V 350MW SOT23
Tolerance: ±7.14%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
Description: DIODE ZENER 5.6V 350MW SOT23
Tolerance: ±7.14%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.52 грн |
| BZX84C5V6A |
![]() |
Виробник: EVVO
Description: DIODE ZENER 5.6V 350MW SOT23
Tolerance: ±7.14%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
Description: DIODE ZENER 5.6V 350MW SOT23
Tolerance: ±7.14%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
на замовлення 2998 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.66 грн |
| 41+ | 7.47 грн |
| 58+ | 5.33 грн |
| 100+ | 4.33 грн |
| 500+ | 3.15 грн |
| D15XB100 |
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Виробник: EVVO
Description: DIODE RECTIFIER BRIDGE SINGLE 10
Packaging: Box
Package / Case: 4-SIP, 5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 5s
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE RECTIFIER BRIDGE SINGLE 10
Packaging: Box
Package / Case: 4-SIP, 5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 5s
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 188 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 176.43 грн |
| 10+ | 109.02 грн |
| 50+ | 82.86 грн |
| 100+ | 69.82 грн |
| D15XB60 |
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Виробник: EVVO
Description: DIODE RECTIFIER BRIDGE SINGLE 60
Packaging: Box
Package / Case: 4-SIP, 5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 5s
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE RECTIFIER BRIDGE SINGLE 60
Packaging: Box
Package / Case: 4-SIP, 5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 5s
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 690 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 176.43 грн |
| 10+ | 109.02 грн |
| 50+ | 82.86 грн |
| 100+ | 69.82 грн |
| 500+ | 55.92 грн |
| D15XB80 |
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Виробник: EVVO
Description: DIODE RECTIFIER BRIDGE SINGLE 80
Packaging: Box
Package / Case: 4-SIP, 5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 5s
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: DIODE RECTIFIER BRIDGE SINGLE 80
Packaging: Box
Package / Case: 4-SIP, 5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 5s
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 256 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 181.18 грн |
| 10+ | 112.07 грн |
| 50+ | 85.24 грн |
| 100+ | 71.86 грн |
| DB104 |
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Виробник: EVVO
Description: BRIDGE DIODE 1A 400V DFM DB
Description: BRIDGE DIODE 1A 400V DFM DB
на замовлення 1375 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 39.56 грн |
| 13+ | 23.54 грн |
| 50+ | 17.08 грн |
| 100+ | 14.05 грн |
| 500+ | 10.57 грн |
| DB107 |
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Виробник: EVVO
Description: BRIDGE DIODE 1A 1000V DFM DB
Description: BRIDGE DIODE 1A 1000V DFM DB
на замовлення 1982 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 38.77 грн |
| 14+ | 23.01 грн |
| 50+ | 16.73 грн |
| 100+ | 13.76 грн |
| 500+ | 10.34 грн |
| DB201S |
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Виробник: EVVO
Description: BRIDGE RECT 1PHASE 1KV 2A DBS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBS
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: BRIDGE RECT 1PHASE 1KV 2A DBS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBS
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
на замовлення 1448 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.18 грн |
| 14+ | 22.25 грн |
| 50+ | 16.09 грн |
| 100+ | 13.24 грн |
| 500+ | 9.94 грн |
| DB201S |
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Виробник: EVVO
Description: BRIDGE RECT 1PHASE 1KV 2A DBS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBS
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: BRIDGE RECT 1PHASE 1KV 2A DBS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBS
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| DB207S |
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Виробник: EVVO
Description: BRIDGE RECT 1PHASE 1KV 2A DBS
Description: BRIDGE RECT 1PHASE 1KV 2A DBS
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 8.43 грн |
| DB207S |
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Виробник: EVVO
Description: BRIDGE RECT 1PHASE 1KV 2A DBS
Description: BRIDGE RECT 1PHASE 1KV 2A DBS
на замовлення 1489 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 34.81 грн |
| 15+ | 20.49 грн |
| 50+ | 14.83 грн |
| 100+ | 12.17 грн |
| 500+ | 9.11 грн |
| DMG2305UX-EV |
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Виробник: EVVO
Description: MOSFET P-CH 20V 4.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 886.6 pF @ 10 V
Description: MOSFET P-CH 20V 4.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 886.6 pF @ 10 V
на замовлення 1239 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 40.35 грн |
| 13+ | 23.92 грн |
| 50+ | 17.37 грн |
| 100+ | 14.31 грн |
| 500+ | 10.77 грн |
| DMG2305UX-EV |
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Виробник: EVVO
Description: MOSFET P-CH 20V 4.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 886.6 pF @ 10 V
Description: MOSFET P-CH 20V 4.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 886.6 pF @ 10 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DS18B20A05 |
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на замовлення 807 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 338.62 грн |
| 5+ | 292.71 грн |
| 10+ | 280.29 грн |
| 25+ | 249.10 грн |
| 50+ | 239.57 грн |
| 100+ | 230.84 грн |
| 500+ | 209.78 грн |
| DS18B20A10 |
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Виробник: EVVO
Description: TEMPERATURE SENSORS -55~+125 1.2
Features: Standby Mode
Packaging: Bag
Package / Case: Cylindrical Probe, Stainless Steel
Output Type: 1-Wire®
Mounting Type: Free Hanging
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2.5V ~ 5.5V
Sensor Type: Digital
Resolution: 12 b
Test Condition: -55°C ~ 125°C
Accuracy - Highest (Lowest): ±0.4°C
Sensing Temperature - Local: -55°C ~ 125°C
Description: TEMPERATURE SENSORS -55~+125 1.2
Features: Standby Mode
Packaging: Bag
Package / Case: Cylindrical Probe, Stainless Steel
Output Type: 1-Wire®
Mounting Type: Free Hanging
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2.5V ~ 5.5V
Sensor Type: Digital
Resolution: 12 b
Test Condition: -55°C ~ 125°C
Accuracy - Highest (Lowest): ±0.4°C
Sensing Temperature - Local: -55°C ~ 125°C
на замовлення 595 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 412.20 грн |
| 5+ | 357.62 грн |
| 10+ | 342.68 грн |
| 25+ | 304.98 грн |
| 50+ | 293.60 грн |
| 100+ | 283.17 грн |
| 500+ | 257.90 грн |
| DS18B20A15 |
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Виробник: EVVO
Description: TEMPERATURE SENSORS -55~+125 1.2
Packaging: Bag
Temperature Range: -55°C ~ 125°C
Terminal Type: Exposed Lead Wires
Length - Lead Wire: 4.921' (1.5m)
Element Type: Temperature Probe
Conductor Type: 3 Conductor System
Description: TEMPERATURE SENSORS -55~+125 1.2
Packaging: Bag
Temperature Range: -55°C ~ 125°C
Terminal Type: Exposed Lead Wires
Length - Lead Wire: 4.921' (1.5m)
Element Type: Temperature Probe
Conductor Type: 3 Conductor System
на замовлення 269 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 485.77 грн |
| 5+ | 421.16 грн |
| 10+ | 404.09 грн |
| 25+ | 359.95 грн |
| 50+ | 346.79 грн |
| 100+ | 334.75 грн |
| DS18B20A20 |
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Виробник: EVVO
Description: TEMPERATURE SENSORS -55~+125 1.2
Packaging: Bag
Temperature Range: -55°C ~ 125°C
Terminal Type: Exposed Lead Wires
Length - Lead Wire: 6.562' (2m)
Element Type: Temperature Probe
Conductor Type: 3 Conductor System
Description: TEMPERATURE SENSORS -55~+125 1.2
Packaging: Bag
Temperature Range: -55°C ~ 125°C
Terminal Type: Exposed Lead Wires
Length - Lead Wire: 6.562' (2m)
Element Type: Temperature Probe
Conductor Type: 3 Conductor System
на замовлення 107 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 556.98 грн |
| 5+ | 483.93 грн |
| 10+ | 464.51 грн |
| 25+ | 414.20 грн |
| 50+ | 399.34 грн |
| 100+ | 385.73 грн |
| DS18B20A30 |
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Виробник: EVVO
Description: TEMPERATURE SENSORS -55~+125 1.2
Packaging: Bag
Features: Output Switch, Programmable Limit, Programmable Resolution, Standby Mode
Package / Case: Cylindrical Probe, Stainless Steel
Output Type: 1-Wire®
Mounting Type: Free Hanging
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2.5V ~ 5.5V
Sensor Type: Digital, Local/Remote
Resolution: 12 b
Test Condition: -10°C ~ 85°C (-55°C ~ 125°C)
Sensing Temperature - Local: -55°C ~ 125°C
Sensing Temperature - Remote: -55°C ~ 125°C
Accuracy - Highest (Lowest): ±0.4°C (±1.2°C)
Description: TEMPERATURE SENSORS -55~+125 1.2
Packaging: Bag
Features: Output Switch, Programmable Limit, Programmable Resolution, Standby Mode
Package / Case: Cylindrical Probe, Stainless Steel
Output Type: 1-Wire®
Mounting Type: Free Hanging
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2.5V ~ 5.5V
Sensor Type: Digital, Local/Remote
Resolution: 12 b
Test Condition: -10°C ~ 85°C (-55°C ~ 125°C)
Sensing Temperature - Local: -55°C ~ 125°C
Sensing Temperature - Remote: -55°C ~ 125°C
Accuracy - Highest (Lowest): ±0.4°C (±1.2°C)
на замовлення 232 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 575.97 грн |
| 5+ | 500.85 грн |
| 10+ | 480.89 грн |
| 25+ | 428.87 грн |
| 60+ | 409.77 грн |
| 120+ | 396.04 грн |
| DS18B20A50 |
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Виробник: EVVO
Description: TEMPERATURE SENSORS -55~+125 1.2
Packaging: Bag
Temperature Range: -55°C ~ 125°C
Terminal Type: Exposed Lead Wires
Length - Lead Wire: 16.404' (5m)
Element Type: Temperature Probe
Conductor Type: 3 Conductor System
Description: TEMPERATURE SENSORS -55~+125 1.2
Packaging: Bag
Temperature Range: -55°C ~ 125°C
Terminal Type: Exposed Lead Wires
Length - Lead Wire: 16.404' (5m)
Element Type: Temperature Probe
Conductor Type: 3 Conductor System
на замовлення 86 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 901.13 грн |
| 5+ | 787.76 грн |
| 10+ | 758.05 грн |
| 25+ | 678.03 грн |
| 50+ | 655.22 грн |
| DS18B20-EV |
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Виробник: EVVO
Description: SENSOR DIGITAL -55C-125C TO92
Features: Standby Mode
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: 1-Wire®
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2.5V ~ 5.5V
Sensor Type: Digital
Resolution: 12 b
Supplier Device Package: TO-92
Test Condition: -55°C ~ 125°C
Accuracy - Highest (Lowest): ±0.4°C
Sensing Temperature - Local: -55°C ~ 125°C
Description: SENSOR DIGITAL -55C-125C TO92
Features: Standby Mode
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: 1-Wire®
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2.5V ~ 5.5V
Sensor Type: Digital
Resolution: 12 b
Supplier Device Package: TO-92
Test Condition: -55°C ~ 125°C
Accuracy - Highest (Lowest): ±0.4°C
Sensing Temperature - Local: -55°C ~ 125°C
на замовлення 5681 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 184.34 грн |
| 5+ | 157.86 грн |
| 10+ | 150.62 грн |
| 25+ | 133.30 грн |
| 50+ | 127.81 грн |
| 100+ | 122.77 грн |
| 500+ | 110.79 грн |
| 1000+ | 107.09 грн |
| 5000+ | 99.62 грн |
| DS210W |
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Виробник: EVVO
Description: DIODE SCHOTTKY 100V 2A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
Description: DIODE SCHOTTKY 100V 2A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
на замовлення 835 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 18.20 грн |
| 29+ | 10.82 грн |
| 100+ | 6.75 грн |
| 500+ | 4.65 грн |
| DS210W |
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Виробник: EVVO
Description: DIODE SCHOTTKY 100V 2A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
Description: DIODE SCHOTTKY 100V 2A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| ES1D |
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Виробник: EVVO
Description: DIODE STANDARD 200V 1A SMA
Description: DIODE STANDARD 200V 1A SMA
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
| ES1D |
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Виробник: EVVO
Description: DIODE STANDARD 200V 1A SMA
Description: DIODE STANDARD 200V 1A SMA
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 2.61 грн |
| FDC5614P-EV |
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Виробник: EVVO
Description: MOSFET P-CH 60V 3A SOT-23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-6
Description: MOSFET P-CH 60V 3A SOT-23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-6
на замовлення 2900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.86 грн |
| 15+ | 20.49 грн |
| 25+ | 18.28 грн |
| 100+ | 14.87 грн |
| 250+ | 13.78 грн |
| 500+ | 13.12 грн |
| 1000+ | 12.37 грн |
| FDC5614P-EV |
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Виробник: EVVO
Description: MOSFET P-CH 60V 3A SOT-23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-6
Description: MOSFET P-CH 60V 3A SOT-23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-6
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FDN304P-EV |
![]() |
Виробник: EVVO
Description: MOSFET P-CH 20V 2.4A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 460mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1312 pF @ 10 V
Description: MOSFET P-CH 20V 2.4A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 460mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1312 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 13.32 грн |
| FDN304P-EV |
![]() |
Виробник: EVVO
Description: MOSFET P-CH 20V 2.4A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 460mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1312 pF @ 10 V
Description: MOSFET P-CH 20V 2.4A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 460mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1312 pF @ 10 V
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од. на суму грн.
| FDN335N-EV |
![]() |
Виробник: EVVO
Description: MOSFET N-CH 20V 1.7A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 1.7A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 10 V
Description: MOSFET N-CH 20V 1.7A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 1.7A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| FDN335N-EV |
![]() |
Виробник: EVVO
Description: MOSFET N-CH 20V 1.7A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 1.7A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 10 V
Description: MOSFET N-CH 20V 1.7A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 1.7A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 9.78 грн |
| FDN337N-EV |
![]() |
Виробник: EVVO
Description: MOSFET N-CH 30V 2.2A SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 460mW (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 2.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 2.2A SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 460mW (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 2.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FDN337N-EV |
![]() |
Виробник: EVVO
Description: MOSFET N-CH 30V 2.2A SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 460mW (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 2.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 2.2A SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 460mW (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 2.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 1773 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.18 грн |
| 14+ | 22.17 грн |
| 50+ | 16.06 грн |
| 100+ | 13.21 грн |
| 500+ | 9.91 грн |
| FDN338P-EV |
![]() |
Виробник: EVVO
Description: MOSFET P-CH 20V 1.6A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
Description: MOSFET P-CH 20V 1.6A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FDN338P-EV |
![]() |
Виробник: EVVO
Description: MOSFET P-CH 20V 1.6A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
Description: MOSFET P-CH 20V 1.6A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 45.89 грн |
| 12+ | 27.27 грн |
| 100+ | 17.46 грн |
| 500+ | 12.39 грн |
| 1000+ | 11.10 грн |
| FDN340P-EV |
![]() |
Виробник: EVVO
Description: MOSFET P-CH 20V 2A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
Description: MOSFET P-CH 20V 2A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FDN340P-EV |
![]() |
Виробник: EVVO
Description: MOSFET P-CH 20V 2A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
Description: MOSFET P-CH 20V 2A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
на замовлення 1554 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 29+ | 11.08 грн |
| 42+ | 7.31 грн |
| 48+ | 6.37 грн |
| 100+ | 5.06 грн |
| 250+ | 4.63 грн |
| 500+ | 4.37 грн |
| 1000+ | 4.09 грн |
| FDV304P-EV |
![]() |
Виробник: EVVO
Description: MOSFET P-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 954 pF @ 15 V
Description: MOSFET P-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 954 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FDV304P-EV |
![]() |
Виробник: EVVO
Description: MOSFET P-CH 25V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 954 pF @ 15 V
Description: MOSFET P-CH 25V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 954 pF @ 15 V
на замовлення 1520 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.39 грн |
| 15+ | 21.71 грн |
| 50+ | 15.72 грн |
| 100+ | 12.93 грн |
| 500+ | 9.71 грн |
| FMMT491 |
![]() |
Виробник: EVVO
Description: TRANS NPN 60V 1A SOT-23
Description: TRANS NPN 60V 1A SOT-23
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.93 грн |
| 6000+ | 5.17 грн |
| 9000+ | 4.89 грн |
| FMMT491 |
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Виробник: EVVO
Description: TRANS NPN 60V 1A SOT-23
Description: TRANS NPN 60V 1A SOT-23
на замовлення 182 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.69 грн |
| 19+ | 16.30 грн |
| 100+ | 10.26 грн |
| FR107 |
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Виробник: EVVO
Description: DIODE GEN PURP 1KV 1A
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1KV 1A
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 8.17 грн |
| FR107 |
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Виробник: EVVO
Description: DIODE GEN PURP 1KV 1A
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1KV 1A
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 2633 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.39 грн |
| 14+ | 21.87 грн |
| 50+ | 15.83 грн |
| 100+ | 13.02 грн |
| 500+ | 9.77 грн |
| FS8205A |
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Виробник: EVVO
Description: DUAL N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 20V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-6
Description: DUAL N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 20V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-6
на замовлення 1776 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 44.31 грн |
| 12+ | 26.06 грн |
| 50+ | 18.96 грн |
| 100+ | 15.62 грн |
| 500+ | 11.80 грн |
| FS8205A |
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Виробник: EVVO
Description: DUAL N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 20V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-6
Description: DUAL N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 20V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-6
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 9.96 грн |
| GBJ1508 |
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Виробник: EVVO
Description: BRIDGE RECT 1PHASE 800V 15A GBJ
Packaging: Box
Package / Case: 4-ESIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 15A GBJ
Packaging: Box
Package / Case: 4-ESIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 205 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 127.38 грн |
| 10+ | 78.32 грн |
| 100+ | 52.54 грн |
| GBJ1510 |
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Виробник: EVVO
Description: BRIDGE RECT 1PHASE 1KV 15A GBJ
Description: BRIDGE RECT 1PHASE 1KV 15A GBJ
на замовлення 247 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 140.04 грн |
| 10+ | 86.01 грн |
| 50+ | 64.83 грн |
| 100+ | 54.41 грн |
| GBJ2508 |
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Виробник: EVVO
Description: BRIDGE RECT 1PHASE 800V 25A GBJ
Packaging: Box
Package / Case: 4-ESIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 25A GBJ
Packaging: Box
Package / Case: 4-ESIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 1913 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 179.59 грн |
| 10+ | 111.38 грн |
| 50+ | 84.63 грн |
| 100+ | 71.32 грн |
| 500+ | 57.12 грн |


























