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GD25WD80EKIGR GigaDevice Semiconductor (HK) Limited Description: NOR FLASH
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (1.5x1.5)
Write Cycle Time - Word, Page: 100µs, 6ms
Memory Interface: SPI - Dual I/O
Access Time: 6 ns
Memory Organization: 1M x 8
товару немає в наявності
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GD25WD80ESIGR GigaDevice Semiconductor (HK) Limited Description: NOR FLASH
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 100µs, 6ms
Memory Interface: SPI - Dual I/O
Access Time: 6 ns
Memory Organization: 1M x 8
товару немає в наявності
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GD25WD80ETIGR GD25WD80ETIGR GigaDevice Semiconductor (HK) Limited Description: NOR FLASH
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 100µs, 6ms
Memory Interface: SPI - Dual I/O
Access Time: 6 ns
Memory Organization: 1M x 8
товару немає в наявності
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GD25WD80ETIGY GigaDevice Semiconductor (HK) Limited DS-00894-GD25WD80E-Rev1.0.pdf Description: IC FLASH 8MBIT SPI/DUAL 8SOP
Packaging: Tray
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 100µs, 6ms
Memory Interface: SPI - Dual I/O
Access Time: 6 ns
Memory Organization: 1M x 8
товару немає в наявності
В кошику  од. на суму  грн.
GD25WQ128ESIGR GD25WQ128ESIGR GigaDevice Semiconductor (HK) Limited DS-00529-GD25WQ128E-Rev1.2.pdf Description: 128MBIT, 1.65V-3.6V, SOP8 208MIL
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Part Status: Active
Write Cycle Time - Word, Page: 120µs, 4ms
Memory Interface: SPI - Quad I/O
Access Time: 8 ns
Memory Organization: 16M x 8
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+113.69 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
GD25WQ128ESIGR GD25WQ128ESIGR GigaDevice Semiconductor (HK) Limited DS-00529-GD25WQ128E-Rev1.2.pdf Description: 128MBIT, 1.65V-3.6V, SOP8 208MIL
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Part Status: Active
Write Cycle Time - Word, Page: 120µs, 4ms
Memory Interface: SPI - Quad I/O
Access Time: 8 ns
Memory Organization: 16M x 8
на замовлення 3522 шт:
термін постачання 21-31 дні (днів)
2+159.24 грн
10+139.66 грн
25+135.96 грн
50+126.92 грн
100+113.45 грн
250+113.12 грн
500+109.59 грн
1000+104.94 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
GD25WQ16EEIGR GD25WQ16EEIGR GigaDevice Semiconductor (HK) Limited DS-00475-GD25WQ16E-Rev1.3.pdf Description: IC FLASH 16MBIT SPI/QUAD 8USON
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (3x2)
Write Cycle Time - Word, Page: 120µs, 4ms
Memory Interface: SPI - Quad I/O
Access Time: 12 ns
Memory Organization: 2M x 8
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+37.46 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
GD25WQ16EEIGR GD25WQ16EEIGR GigaDevice Semiconductor (HK) Limited DS-00475-GD25WQ16E-Rev1.3.pdf Description: IC FLASH 16MBIT SPI/QUAD 8USON
Packaging: Cut Tape (CT)
Package / Case: 8-XFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (3x2)
Write Cycle Time - Word, Page: 120µs, 4ms
Memory Interface: SPI - Quad I/O
Access Time: 12 ns
Memory Organization: 2M x 8
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
4+78.06 грн
10+54.42 грн
25+49.22 грн
100+40.79 грн
250+38.23 грн
500+36.69 грн
1000+34.84 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
GD25WQ16ENIGR GigaDevice Semiconductor (HK) Limited DS-00475-GD25WQ16E-Rev1.3.pdf Description: IC FLASH 16MBIT SPI/QUAD 8USON
Packaging: Tape & Reel (TR)
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (3x4)
Write Cycle Time - Word, Page: 120µs, 4ms
Memory Interface: SPI - Quad I/O
Access Time: 12 ns
Memory Organization: 2M x 8
товару немає в наявності
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GD25WQ32EEIGR GigaDevice Semiconductor (HK) Limited DS-00438-GD25WQ32E-Rev1.3.pdf Description: IC FLASH 32MBIT SPI/QUAD 8USON
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (3x2)
Write Cycle Time - Word, Page: 120µs, 4ms
Memory Interface: SPI - Quad I/O
Access Time: 8 ns
Memory Organization: 4M x 8
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GD25WQ32ELIGR GigaDevice Semiconductor (HK) Limited Description: IC FLASH 32MBIT SPI/QUAD 8WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WLCSP
Write Cycle Time - Word, Page: 120µs, 4ms
Memory Interface: SPI - Quad I/O
Access Time: 8 ns
Memory Organization: 4M x 8
товару немає в наявності
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GD25WQ32ENIGR GigaDevice Semiconductor (HK) Limited DS-00438-GD25WQ32E-Rev1.3.pdf Description: IC FLASH 32MBIT SPI/QUAD 8USON
Packaging: Tape & Reel (TR)
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (3x4)
Write Cycle Time - Word, Page: 120µs, 4ms
Memory Interface: SPI - Quad I/O
Access Time: 8 ns
Memory Organization: 4M x 8
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GD25WQ32ESIGR GD25WQ32ESIGR GigaDevice Semiconductor (HK) Limited 2023__Gde.pdf Description: IC FLASH 32MBIT SPI/QUAD 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Part Status: Active
Write Cycle Time - Word, Page: 120µs, 4ms
Memory Interface: SPI - Quad I/O
Access Time: 8 ns
Memory Organization: 4M x 8
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
2000+60.99 грн
4000+57.27 грн
6000+56.42 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
GD25WQ32ESIGR GD25WQ32ESIGR GigaDevice Semiconductor (HK) Limited 2023__Gde.pdf Description: IC FLASH 32MBIT SPI/QUAD 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Part Status: Active
Write Cycle Time - Word, Page: 120µs, 4ms
Memory Interface: SPI - Quad I/O
Access Time: 8 ns
Memory Organization: 4M x 8
на замовлення 6480 шт:
термін постачання 21-31 дні (днів)
5+77.28 грн
10+70.05 грн
25+68.13 грн
50+62.55 грн
100+61.16 грн
250+59.30 грн
500+56.95 грн
1000+55.58 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
GD25WQ32ESJGR GD25WQ32ESJGR GigaDevice Semiconductor (HK) Limited DS-00438-GD25WQ32E-Rev1.3.pdf Description: IC FLASH 32MBIT SPI/QUAD 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 84 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 240µs, 8ms
Memory Interface: SPI - Quad I/O
Access Time: 8 ns
Memory Organization: 4M x 8
товару немає в наявності
В кошику  од. на суму  грн.
GD25WQ32ETIGR GigaDevice Semiconductor (HK) Limited DS-00438-GD25WQ32E-Rev1.3.pdf Description: IC FLASH 32MBIT SPI/QUAD 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 120µs, 4ms
Memory Interface: SPI - Quad I/O
Access Time: 8 ns
Memory Organization: 4M x 8
товару немає в наявності
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GD25WQ64ENIGR GigaDevice Semiconductor (HK) Limited DS-00476-GD25WQ64E-Rev1.2.pdf Description: IC FLASH 64MBIT SPI/QUAD 8USON
Packaging: Tape & Reel (TR)
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (3x4)
Write Cycle Time - Word, Page: 120µs, 4ms
Memory Interface: SPI - Quad I/O
Access Time: 12 ns
Memory Organization: 8M x 8
товару немає в наявності
В кошику  од. на суму  грн.
GD25WQ64ESIGR GD25WQ64ESIGR GigaDevice Semiconductor (HK) Limited 2023__Gde.pdf Description: IC FLASH 64MBIT SPI/QUAD 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Part Status: Active
Write Cycle Time - Word, Page: 120µs, 4ms
Memory Interface: SPI - Quad I/O
Access Time: 12 ns
Memory Organization: 8M x 8
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+77.08 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
GD25WQ64ESIGR GD25WQ64ESIGR GigaDevice Semiconductor (HK) Limited 2023__Gde.pdf Description: IC FLASH 64MBIT SPI/QUAD 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Part Status: Active
Write Cycle Time - Word, Page: 120µs, 4ms
Memory Interface: SPI - Quad I/O
Access Time: 12 ns
Memory Organization: 8M x 8
на замовлення 2723 шт:
термін постачання 21-31 дні (днів)
4+98.35 грн
10+88.70 грн
25+86.23 грн
50+79.13 грн
100+77.35 грн
250+74.99 грн
500+72.00 грн
1000+70.25 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
GD25WQ64ETIGR GigaDevice Semiconductor (HK) Limited 2023__Gde.pdf Description: 64MBIT, 1.65V-3.6V, SOP8 150MIL,
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 120µs, 4ms
Memory Interface: SPI - Quad I/O
Access Time: 12 ns
Memory Organization: 8M x 8
товару немає в наявності
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GD25WQ64ETIGR GigaDevice Semiconductor (HK) Limited 2023__Gde.pdf Description: 64MBIT, 1.65V-3.6V, SOP8 150MIL,
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 120µs, 4ms
Memory Interface: SPI - Quad I/O
Access Time: 12 ns
Memory Organization: 8M x 8
на замовлення 2975 шт:
термін постачання 21-31 дні (днів)
4+99.91 грн
10+87.94 грн
25+85.51 грн
50+79.84 грн
100+71.37 грн
250+71.16 грн
500+68.94 грн
1000+66.01 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
GD25WQ64EWIGR GD25WQ64EWIGR GigaDevice Semiconductor (HK) Limited DS-00476-GD25WQ64E-Rev1.2.pdf Description: IC FLASH 64MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Write Cycle Time - Word, Page: 120µs, 4ms
Memory Interface: SPI - Quad I/O
Access Time: 12 ns
Memory Organization: 8M x 8
товару немає в наявності
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GD25WQ80ETIGR GigaDevice Semiconductor (HK) Limited DS-00477-GD25WQ80E-Rev1.3.pdf Description: IC FLASH 8MBIT SPI/QUAD 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 120µs, 4ms
Memory Interface: SPI - Quad I/O
Access Time: 12 ns
Memory Organization: 1M x 8
товару немає в наявності
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GD25X512MEB2RY GigaDevice Semiconductor (HK) Limited Description: IC FLASH
Packaging: Tray
Technology: FLASH - NOR
Memory Format: FLASH
товару немає в наявності
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GD25X512MEBARY GD25X512MEBARY GigaDevice Semiconductor (HK) Limited Description: IC FLSH 512MBIT SPI/OCTL 24TFBGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-TFBGA (6x8)
Memory Interface: SPI - Octal I/O
Memory Organization: 64M x 8
товару немає в наявності
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GD25X512MEBIRY GD25X512MEBIRY GigaDevice Semiconductor (HK) Limited Description: IC FLSH 512MBIT SPI/OCTL 24TFBGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-TFBGA (6x8)
Memory Interface: SPI - Octal I/O
Memory Organization: 64M x 8
на замовлення 140 шт:
термін постачання 21-31 дні (днів)
1+624.45 грн
10+558.41 грн
25+541.34 грн
50+495.88 грн
100+483.83 грн
В кошику  од. на суму  грн.
GD25X512MEF2RR GD25X512MEF2RR GigaDevice Semiconductor (HK) Limited Description: IC FLASH 512MBIT SPI/OCTAL 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOP
Memory Interface: SPI - Octal I/O
Memory Organization: 64M x 8
товару немає в наявності
В кошику  од. на суму  грн.
GD25X512MEFARR GD25X512MEFARR GigaDevice Semiconductor (HK) Limited Description: IC FLASH 512MBIT SPI/OCTAL 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOP
Memory Interface: SPI - Octal I/O
Memory Organization: 64M x 8
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GD25X512MEFIRR GD25X512MEFIRR GigaDevice Semiconductor (HK) Limited Description: IC FLASH 512MBIT SPI/OCTAL 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOP
Memory Interface: SPI - Octal I/O
Memory Organization: 64M x 8
товару немає в наявності
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GD32VW553HMQ7 GigaDevice Semiconductor (HK) Limited GD32VW553xx%20Datasheet_Rev1.4.pdf Description: 32 BIT RISC-V MCU@160MHZ, 4096K
Packaging: Tray
Package / Case: 40-WFQFN Exposed Pad
Sensitivity: -100.3dBm
Mounting Type: Surface Mount
Memory Size: 4MB Flash, 320kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 22.3dBm
Protocol: 802.11b/g/n/ax, Bluetooth v5.2
Current - Receiving: 99mA ~ 107mA
Data Rate (Max): 2Mbps
Current - Transmitting: 265mA ~ 316mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 28
Modulation: CCK, OFDM
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: ADC, GPIO, I2C, I2S, IrDA, JTAG, SDIO, SPI, UART, USART, USB
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В кошику  од. на суму  грн.
GD32VW553KMQ7 GigaDevice Semiconductor (HK) Limited GD32VW553xx%20Datasheet_Rev1.4.pdf Description: 32 BIT RISC-V MCU@160MHZ, 4096K
Packaging: Tray
Package / Case: 32-WFQFN Exposed Pad
Sensitivity: -100.3dBm
Mounting Type: Surface Mount
Memory Size: 4MB Flash, 320kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 22.3dBm
Protocol: 802.11b/g/n/ax, Bluetooth v5.2
Current - Receiving: 99mA ~ 107mA
Data Rate (Max): 2Mbps
Current - Transmitting: 265mA ~ 316mA
Supplier Device Package: 32-QFN (4x4)
GPIO: 21
Modulation: CCK, OFDM
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: ADC, GPIO, I2C, I2S, IrDA, JTAG, SDIO, SPI, UART, USART, USB
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GD55B01GEFIRR GD55B01GEFIRR GigaDevice Semiconductor (HK) Limited DS-00650-GD55B01GE-Rev1.4.pdf Description: IC FLASH 1GBIT SPI/QUAD
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOP
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI, DTR
Memory Organization: 128M x 8
на замовлення 871 шт:
термін постачання 21-31 дні (днів)
1+814.91 грн
10+728.05 грн
25+705.48 грн
50+646.08 грн
100+630.21 грн
250+616.73 грн
В кошику  од. на суму  грн.
GD55B01GEFIRR GD55B01GEFIRR GigaDevice Semiconductor (HK) Limited DS-00650-GD55B01GE-Rev1.4.pdf Description: IC FLASH 1GBIT SPI/QUAD
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOP
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI, DTR
Memory Organization: 128M x 8
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GD55LB01GEYAGR GigaDevice Semiconductor (HK) Limited DS-00572-GD55LB01GE-Rev1.5.pdf Description: NOR FLASH
Packaging: Tape & Reel (TR)
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GD55LT02GEB2RY GigaDevice Semiconductor (HK) Limited Description: LINEAR IC
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-TFBGA (6x8)
Memory Interface: SPI - Quad I/O, QPI, DTR
Memory Organization: 256M x 8
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GD55LT02GEBARY GigaDevice Semiconductor (HK) Limited Description: LINEAR IC
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-TFBGA (6x8)
Memory Interface: SPI - Quad I/O, QPI, DTR
Memory Organization: 256M x 8
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GD55LT02GEBIRY GigaDevice Semiconductor (HK) Limited Description: LINEAR IC
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-TFBGA (6x8)
Memory Interface: SPI - Quad I/O, QPI, DTR
Memory Organization: 256M x 8
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GD55LX01GEB2RY GD55LX01GEB2RY GigaDevice Semiconductor (HK) Limited 1970_GigaDevice_Product_Selection_Guide-1947349.pdf Description: IC FLASH 1GBIT SPI/OCT
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-TFBGA (6x8)
Memory Interface: SPI - Octal I/O, DTR
Memory Organization: 128M x 8
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В кошику  од. на суму  грн.
GD55LX01GEBARY GigaDevice Semiconductor (HK) Limited 1970_GigaDevice_Product_Selection_Guide-1947349.pdf Description: IC FLASH
Packaging: Tray
Technology: FLASH - NOR
Memory Format: FLASH
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В кошику  од. на суму  грн.
GD55LX01GEBIRY GD55LX01GEBIRY GigaDevice Semiconductor (HK) Limited 1970_GigaDevice_Product_Selection_Guide-1947349.pdf Description: IC FLASH 1GBIT SPI/OCT
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-TFBGA (6x8)
Memory Interface: SPI - Octal I/O, DTR
Memory Organization: 128M x 8
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
1+1288.72 грн
10+1149.58 грн
25+1113.35 грн
50+1019.32 грн
100+994.05 грн
В кошику  од. на суму  грн.
GD55LX01GEF2RR GigaDevice Semiconductor (HK) Limited Description: IC FLASH
Packaging: Tape & Reel (TR)
Technology: FLASH - NOR
Memory Format: FLASH
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GD55LX01GEFIRR GD55LX01GEFIRR GigaDevice Semiconductor (HK) Limited GigaDevice_Product_Selection_Guide-1947349.pdf Description: IC FLASH 1GBIT SPI/OCT
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Voltage - Supply: 1.65V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOP
Part Status: Active
Memory Interface: SPI - Octal I/O, DTR
Memory Organization: 128M x 8
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В кошику  од. на суму  грн.
GD55LX01GEFIRR GD55LX01GEFIRR GigaDevice Semiconductor (HK) Limited GigaDevice_Product_Selection_Guide-1947349.pdf Description: IC FLASH 1GBIT SPI/OCT
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Voltage - Supply: 1.65V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOP
Part Status: Active
Memory Interface: SPI - Octal I/O, DTR
Memory Organization: 128M x 8
на замовлення 938 шт:
термін постачання 21-31 дні (днів)
1+1176.31 грн
10+1049.84 грн
25+1016.75 грн
50+930.90 грн
100+907.84 грн
250+902.33 грн
В кошику  од. на суму  грн.
GD55T01GEYAGR GigaDevice Semiconductor (HK) Limited Description: IC FLASH
Packaging: Tape & Reel (TR)
Technology: FLASH - NOR
Memory Format: FLASH
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GD5F1GM7REWIGR GigaDevice Semiconductor (HK) Limited Description: IC FLASH 1GBIT SPI/QUAD
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NAND (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 9 ns
Memory Organization: 256M x 4
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В кошику  од. на суму  грн.
GD5F1GM7REWIGY GigaDevice Semiconductor (HK) Limited DS-00860-GD5F1GM7RE-Rev1.2.pdf Description: IC FLASH 1GBIT SPI/QUAD
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NAND (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 9 ns
Memory Organization: 256M x 4
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GD5F1GM7REYIGR GigaDevice Semiconductor (HK) Limited Description: IC FLASH 1GBIT SPI/QUAD
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NAND (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 9 ns
Memory Organization: 256M x 4
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В кошику  од. на суму  грн.
GD5F1GM7REYIGY GigaDevice Semiconductor (HK) Limited DS-00860-GD5F1GM7RE-Rev1.2.pdf Description: IC FLASH 1GBIT SPI/QUAD
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NAND (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 9 ns
Memory Organization: 256M x 4
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GD5F1GM7UEWIGR GigaDevice Semiconductor (HK) Limited Description: IC FLASH 1GBIT SPI/QUAD
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 7 ns
Memory Organization: 256M x 4
товару немає в наявності
В кошику  од. на суму  грн.
GD5F1GM7UEWIGY GigaDevice Semiconductor (HK) Limited DS-00860-GD5F1GM7RE-Rev1.2.pdf Description: IC FLASH 1GBIT SPI/QUAD
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 7 ns
Memory Organization: 256M x 4
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GD5F1GM7UEYIGR GD5F1GM7UEYIGR GigaDevice Semiconductor (HK) Limited DS-00860-GD5F1GM7RE-Rev1.3.pdf Description: IC FLASH 1GBIT SPI/QUAD
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 7 ns
Memory Organization: 128M x 8
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GD5F1GM7UEYIGR GD5F1GM7UEYIGR GigaDevice Semiconductor (HK) Limited DS-00860-GD5F1GM7RE-Rev1.3.pdf Description: IC FLASH 1GBIT SPI/QUAD
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 7 ns
Memory Organization: 128M x 8
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GD5F1GM7UEYIGY GigaDevice Semiconductor (HK) Limited Description: IC FLASH 1GBIT SPI/QUAD
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 7 ns
Memory Organization: 256M x 4
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В кошику  од. на суму  грн.
GD5F1GM7UEYJGR GigaDevice Semiconductor (HK) Limited Description: IC FLASH 1GBIT SPI/QUAD
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 7 ns
Memory Organization: 256M x 4
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GD5F1GQ4RF9IGR GD5F1GQ4RF9IGR GigaDevice Semiconductor (HK) Limited GD5F1GQ4xFxxG.pdf Description: IC FLASH 1GBIT SPI/QUAD I/O 8LGA
Packaging: Tape & Reel (TR)
Package / Case: 8-VLGA Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NAND
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-LGA (6x8)
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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GD5F1GQ4RF9IGY GD5F1GQ4RF9IGY GigaDevice Semiconductor (HK) Limited GD5F1GQ4xFxxG.pdf Description: IC FLASH 1GBIT SPI/QUAD I/O 8LGA
Packaging: Tray
Package / Case: 8-VLGA Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NAND
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-LGA (6x8)
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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GD5F1GQ4UEYIGR GD5F1GQ4UEYIGR GigaDevice Semiconductor (HK) Limited GD5F1GQ4xFxxG.pdf Description: IC FLASH 1GBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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GD5F1GQ4UEYIGY GD5F1GQ4UEYIGY GigaDevice Semiconductor (HK) Limited GD5F1GQ4xFxxG.pdf Description: IC FLASH 1GBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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GD5F1GQ4UFYIGR GD5F1GQ4UFYIGR GigaDevice Semiconductor (HK) Limited GD5F1GQ4xFxxG.pdf Description: IC FLASH 1GBIT SPI/QUAD 8WSON
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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GD5F1GQ4UFYIGR GD5F1GQ4UFYIGR GigaDevice Semiconductor (HK) Limited GD5F1GQ4xFxxG.pdf Description: IC FLASH 1GBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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GD25WD80EKIGR
Виробник: GigaDevice Semiconductor (HK) Limited
Description: NOR FLASH
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (1.5x1.5)
Write Cycle Time - Word, Page: 100µs, 6ms
Memory Interface: SPI - Dual I/O
Access Time: 6 ns
Memory Organization: 1M x 8
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GD25WD80ESIGR
Виробник: GigaDevice Semiconductor (HK) Limited
Description: NOR FLASH
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 100µs, 6ms
Memory Interface: SPI - Dual I/O
Access Time: 6 ns
Memory Organization: 1M x 8
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GD25WD80ETIGR
GD25WD80ETIGR
Виробник: GigaDevice Semiconductor (HK) Limited
Description: NOR FLASH
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 100µs, 6ms
Memory Interface: SPI - Dual I/O
Access Time: 6 ns
Memory Organization: 1M x 8
товару немає в наявності
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GD25WD80ETIGY DS-00894-GD25WD80E-Rev1.0.pdf
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 8MBIT SPI/DUAL 8SOP
Packaging: Tray
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 100µs, 6ms
Memory Interface: SPI - Dual I/O
Access Time: 6 ns
Memory Organization: 1M x 8
товару немає в наявності
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GD25WQ128ESIGR DS-00529-GD25WQ128E-Rev1.2.pdf
GD25WQ128ESIGR
Виробник: GigaDevice Semiconductor (HK) Limited
Description: 128MBIT, 1.65V-3.6V, SOP8 208MIL
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Part Status: Active
Write Cycle Time - Word, Page: 120µs, 4ms
Memory Interface: SPI - Quad I/O
Access Time: 8 ns
Memory Organization: 16M x 8
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+113.69 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
GD25WQ128ESIGR DS-00529-GD25WQ128E-Rev1.2.pdf
GD25WQ128ESIGR
Виробник: GigaDevice Semiconductor (HK) Limited
Description: 128MBIT, 1.65V-3.6V, SOP8 208MIL
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Part Status: Active
Write Cycle Time - Word, Page: 120µs, 4ms
Memory Interface: SPI - Quad I/O
Access Time: 8 ns
Memory Organization: 16M x 8
на замовлення 3522 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+159.24 грн
10+139.66 грн
25+135.96 грн
50+126.92 грн
100+113.45 грн
250+113.12 грн
500+109.59 грн
1000+104.94 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
GD25WQ16EEIGR DS-00475-GD25WQ16E-Rev1.3.pdf
GD25WQ16EEIGR
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 16MBIT SPI/QUAD 8USON
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (3x2)
Write Cycle Time - Word, Page: 120µs, 4ms
Memory Interface: SPI - Quad I/O
Access Time: 12 ns
Memory Organization: 2M x 8
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+37.46 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
GD25WQ16EEIGR DS-00475-GD25WQ16E-Rev1.3.pdf
GD25WQ16EEIGR
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 16MBIT SPI/QUAD 8USON
Packaging: Cut Tape (CT)
Package / Case: 8-XFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (3x2)
Write Cycle Time - Word, Page: 120µs, 4ms
Memory Interface: SPI - Quad I/O
Access Time: 12 ns
Memory Organization: 2M x 8
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+78.06 грн
10+54.42 грн
25+49.22 грн
100+40.79 грн
250+38.23 грн
500+36.69 грн
1000+34.84 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
GD25WQ16ENIGR DS-00475-GD25WQ16E-Rev1.3.pdf
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 16MBIT SPI/QUAD 8USON
Packaging: Tape & Reel (TR)
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (3x4)
Write Cycle Time - Word, Page: 120µs, 4ms
Memory Interface: SPI - Quad I/O
Access Time: 12 ns
Memory Organization: 2M x 8
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GD25WQ32EEIGR DS-00438-GD25WQ32E-Rev1.3.pdf
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 32MBIT SPI/QUAD 8USON
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (3x2)
Write Cycle Time - Word, Page: 120µs, 4ms
Memory Interface: SPI - Quad I/O
Access Time: 8 ns
Memory Organization: 4M x 8
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GD25WQ32ELIGR
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 32MBIT SPI/QUAD 8WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WLCSP
Write Cycle Time - Word, Page: 120µs, 4ms
Memory Interface: SPI - Quad I/O
Access Time: 8 ns
Memory Organization: 4M x 8
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GD25WQ32ENIGR DS-00438-GD25WQ32E-Rev1.3.pdf
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 32MBIT SPI/QUAD 8USON
Packaging: Tape & Reel (TR)
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (3x4)
Write Cycle Time - Word, Page: 120µs, 4ms
Memory Interface: SPI - Quad I/O
Access Time: 8 ns
Memory Organization: 4M x 8
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GD25WQ32ESIGR 2023__Gde.pdf
GD25WQ32ESIGR
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 32MBIT SPI/QUAD 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Part Status: Active
Write Cycle Time - Word, Page: 120µs, 4ms
Memory Interface: SPI - Quad I/O
Access Time: 8 ns
Memory Organization: 4M x 8
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+60.99 грн
4000+57.27 грн
6000+56.42 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
GD25WQ32ESIGR 2023__Gde.pdf
GD25WQ32ESIGR
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 32MBIT SPI/QUAD 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Part Status: Active
Write Cycle Time - Word, Page: 120µs, 4ms
Memory Interface: SPI - Quad I/O
Access Time: 8 ns
Memory Organization: 4M x 8
на замовлення 6480 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+77.28 грн
10+70.05 грн
25+68.13 грн
50+62.55 грн
100+61.16 грн
250+59.30 грн
500+56.95 грн
1000+55.58 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
GD25WQ32ESJGR DS-00438-GD25WQ32E-Rev1.3.pdf
GD25WQ32ESJGR
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 32MBIT SPI/QUAD 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 84 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 240µs, 8ms
Memory Interface: SPI - Quad I/O
Access Time: 8 ns
Memory Organization: 4M x 8
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GD25WQ32ETIGR DS-00438-GD25WQ32E-Rev1.3.pdf
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 32MBIT SPI/QUAD 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 120µs, 4ms
Memory Interface: SPI - Quad I/O
Access Time: 8 ns
Memory Organization: 4M x 8
товару немає в наявності
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GD25WQ64ENIGR DS-00476-GD25WQ64E-Rev1.2.pdf
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 64MBIT SPI/QUAD 8USON
Packaging: Tape & Reel (TR)
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (3x4)
Write Cycle Time - Word, Page: 120µs, 4ms
Memory Interface: SPI - Quad I/O
Access Time: 12 ns
Memory Organization: 8M x 8
товару немає в наявності
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GD25WQ64ESIGR 2023__Gde.pdf
GD25WQ64ESIGR
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 64MBIT SPI/QUAD 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Part Status: Active
Write Cycle Time - Word, Page: 120µs, 4ms
Memory Interface: SPI - Quad I/O
Access Time: 12 ns
Memory Organization: 8M x 8
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+77.08 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
GD25WQ64ESIGR 2023__Gde.pdf
GD25WQ64ESIGR
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 64MBIT SPI/QUAD 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Part Status: Active
Write Cycle Time - Word, Page: 120µs, 4ms
Memory Interface: SPI - Quad I/O
Access Time: 12 ns
Memory Organization: 8M x 8
на замовлення 2723 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+98.35 грн
10+88.70 грн
25+86.23 грн
50+79.13 грн
100+77.35 грн
250+74.99 грн
500+72.00 грн
1000+70.25 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
GD25WQ64ETIGR 2023__Gde.pdf
Виробник: GigaDevice Semiconductor (HK) Limited
Description: 64MBIT, 1.65V-3.6V, SOP8 150MIL,
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 120µs, 4ms
Memory Interface: SPI - Quad I/O
Access Time: 12 ns
Memory Organization: 8M x 8
товару немає в наявності
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GD25WQ64ETIGR 2023__Gde.pdf
Виробник: GigaDevice Semiconductor (HK) Limited
Description: 64MBIT, 1.65V-3.6V, SOP8 150MIL,
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 120µs, 4ms
Memory Interface: SPI - Quad I/O
Access Time: 12 ns
Memory Organization: 8M x 8
на замовлення 2975 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+99.91 грн
10+87.94 грн
25+85.51 грн
50+79.84 грн
100+71.37 грн
250+71.16 грн
500+68.94 грн
1000+66.01 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
GD25WQ64EWIGR DS-00476-GD25WQ64E-Rev1.2.pdf
GD25WQ64EWIGR
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 64MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Write Cycle Time - Word, Page: 120µs, 4ms
Memory Interface: SPI - Quad I/O
Access Time: 12 ns
Memory Organization: 8M x 8
товару немає в наявності
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GD25WQ80ETIGR DS-00477-GD25WQ80E-Rev1.3.pdf
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 8MBIT SPI/QUAD 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 120µs, 4ms
Memory Interface: SPI - Quad I/O
Access Time: 12 ns
Memory Organization: 1M x 8
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GD25X512MEB2RY
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH
Packaging: Tray
Technology: FLASH - NOR
Memory Format: FLASH
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GD25X512MEBARY
GD25X512MEBARY
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLSH 512MBIT SPI/OCTL 24TFBGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-TFBGA (6x8)
Memory Interface: SPI - Octal I/O
Memory Organization: 64M x 8
товару немає в наявності
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GD25X512MEBIRY
GD25X512MEBIRY
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLSH 512MBIT SPI/OCTL 24TFBGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-TFBGA (6x8)
Memory Interface: SPI - Octal I/O
Memory Organization: 64M x 8
на замовлення 140 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+624.45 грн
10+558.41 грн
25+541.34 грн
50+495.88 грн
100+483.83 грн
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GD25X512MEF2RR
GD25X512MEF2RR
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 512MBIT SPI/OCTAL 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOP
Memory Interface: SPI - Octal I/O
Memory Organization: 64M x 8
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GD25X512MEFARR
GD25X512MEFARR
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 512MBIT SPI/OCTAL 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOP
Memory Interface: SPI - Octal I/O
Memory Organization: 64M x 8
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GD25X512MEFIRR
GD25X512MEFIRR
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 512MBIT SPI/OCTAL 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOP
Memory Interface: SPI - Octal I/O
Memory Organization: 64M x 8
товару немає в наявності
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GD32VW553HMQ7 GD32VW553xx%20Datasheet_Rev1.4.pdf
Виробник: GigaDevice Semiconductor (HK) Limited
Description: 32 BIT RISC-V MCU@160MHZ, 4096K
Packaging: Tray
Package / Case: 40-WFQFN Exposed Pad
Sensitivity: -100.3dBm
Mounting Type: Surface Mount
Memory Size: 4MB Flash, 320kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 22.3dBm
Protocol: 802.11b/g/n/ax, Bluetooth v5.2
Current - Receiving: 99mA ~ 107mA
Data Rate (Max): 2Mbps
Current - Transmitting: 265mA ~ 316mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 28
Modulation: CCK, OFDM
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: ADC, GPIO, I2C, I2S, IrDA, JTAG, SDIO, SPI, UART, USART, USB
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GD32VW553KMQ7 GD32VW553xx%20Datasheet_Rev1.4.pdf
Виробник: GigaDevice Semiconductor (HK) Limited
Description: 32 BIT RISC-V MCU@160MHZ, 4096K
Packaging: Tray
Package / Case: 32-WFQFN Exposed Pad
Sensitivity: -100.3dBm
Mounting Type: Surface Mount
Memory Size: 4MB Flash, 320kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 22.3dBm
Protocol: 802.11b/g/n/ax, Bluetooth v5.2
Current - Receiving: 99mA ~ 107mA
Data Rate (Max): 2Mbps
Current - Transmitting: 265mA ~ 316mA
Supplier Device Package: 32-QFN (4x4)
GPIO: 21
Modulation: CCK, OFDM
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: ADC, GPIO, I2C, I2S, IrDA, JTAG, SDIO, SPI, UART, USART, USB
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GD55B01GEFIRR DS-00650-GD55B01GE-Rev1.4.pdf
GD55B01GEFIRR
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 1GBIT SPI/QUAD
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOP
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI, DTR
Memory Organization: 128M x 8
на замовлення 871 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+814.91 грн
10+728.05 грн
25+705.48 грн
50+646.08 грн
100+630.21 грн
250+616.73 грн
В кошику  од. на суму  грн.
GD55B01GEFIRR DS-00650-GD55B01GE-Rev1.4.pdf
GD55B01GEFIRR
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 1GBIT SPI/QUAD
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOP
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI, DTR
Memory Organization: 128M x 8
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GD55LB01GEYAGR DS-00572-GD55LB01GE-Rev1.5.pdf
Виробник: GigaDevice Semiconductor (HK) Limited
Description: NOR FLASH
Packaging: Tape & Reel (TR)
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GD55LT02GEB2RY
Виробник: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-TFBGA (6x8)
Memory Interface: SPI - Quad I/O, QPI, DTR
Memory Organization: 256M x 8
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GD55LT02GEBARY
Виробник: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-TFBGA (6x8)
Memory Interface: SPI - Quad I/O, QPI, DTR
Memory Organization: 256M x 8
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GD55LT02GEBIRY
Виробник: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-TFBGA (6x8)
Memory Interface: SPI - Quad I/O, QPI, DTR
Memory Organization: 256M x 8
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GD55LX01GEB2RY 1970_GigaDevice_Product_Selection_Guide-1947349.pdf
GD55LX01GEB2RY
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 1GBIT SPI/OCT
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-TFBGA (6x8)
Memory Interface: SPI - Octal I/O, DTR
Memory Organization: 128M x 8
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GD55LX01GEBARY 1970_GigaDevice_Product_Selection_Guide-1947349.pdf
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH
Packaging: Tray
Technology: FLASH - NOR
Memory Format: FLASH
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GD55LX01GEBIRY 1970_GigaDevice_Product_Selection_Guide-1947349.pdf
GD55LX01GEBIRY
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 1GBIT SPI/OCT
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-TFBGA (6x8)
Memory Interface: SPI - Octal I/O, DTR
Memory Organization: 128M x 8
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1288.72 грн
10+1149.58 грн
25+1113.35 грн
50+1019.32 грн
100+994.05 грн
В кошику  од. на суму  грн.
GD55LX01GEF2RR
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH
Packaging: Tape & Reel (TR)
Technology: FLASH - NOR
Memory Format: FLASH
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GD55LX01GEFIRR GigaDevice_Product_Selection_Guide-1947349.pdf
GD55LX01GEFIRR
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 1GBIT SPI/OCT
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Voltage - Supply: 1.65V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOP
Part Status: Active
Memory Interface: SPI - Octal I/O, DTR
Memory Organization: 128M x 8
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GD55LX01GEFIRR GigaDevice_Product_Selection_Guide-1947349.pdf
GD55LX01GEFIRR
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 1GBIT SPI/OCT
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Voltage - Supply: 1.65V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOP
Part Status: Active
Memory Interface: SPI - Octal I/O, DTR
Memory Organization: 128M x 8
на замовлення 938 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1176.31 грн
10+1049.84 грн
25+1016.75 грн
50+930.90 грн
100+907.84 грн
250+902.33 грн
В кошику  од. на суму  грн.
GD55T01GEYAGR
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH
Packaging: Tape & Reel (TR)
Technology: FLASH - NOR
Memory Format: FLASH
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GD5F1GM7REWIGR
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 1GBIT SPI/QUAD
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NAND (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 9 ns
Memory Organization: 256M x 4
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GD5F1GM7REWIGY DS-00860-GD5F1GM7RE-Rev1.2.pdf
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 1GBIT SPI/QUAD
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NAND (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 9 ns
Memory Organization: 256M x 4
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GD5F1GM7REYIGR
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 1GBIT SPI/QUAD
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NAND (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 9 ns
Memory Organization: 256M x 4
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В кошику  од. на суму  грн.
GD5F1GM7REYIGY DS-00860-GD5F1GM7RE-Rev1.2.pdf
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 1GBIT SPI/QUAD
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NAND (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 9 ns
Memory Organization: 256M x 4
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GD5F1GM7UEWIGR
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 1GBIT SPI/QUAD
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 7 ns
Memory Organization: 256M x 4
товару немає в наявності
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GD5F1GM7UEWIGY DS-00860-GD5F1GM7RE-Rev1.2.pdf
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 1GBIT SPI/QUAD
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 7 ns
Memory Organization: 256M x 4
товару немає в наявності
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GD5F1GM7UEYIGR DS-00860-GD5F1GM7RE-Rev1.3.pdf
GD5F1GM7UEYIGR
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 1GBIT SPI/QUAD
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 7 ns
Memory Organization: 128M x 8
товару немає в наявності
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GD5F1GM7UEYIGR DS-00860-GD5F1GM7RE-Rev1.3.pdf
GD5F1GM7UEYIGR
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 1GBIT SPI/QUAD
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 7 ns
Memory Organization: 128M x 8
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GD5F1GM7UEYIGY
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 1GBIT SPI/QUAD
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 7 ns
Memory Organization: 256M x 4
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GD5F1GM7UEYJGR
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 1GBIT SPI/QUAD
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 7 ns
Memory Organization: 256M x 4
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GD5F1GQ4RF9IGR GD5F1GQ4xFxxG.pdf
GD5F1GQ4RF9IGR
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 1GBIT SPI/QUAD I/O 8LGA
Packaging: Tape & Reel (TR)
Package / Case: 8-VLGA Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NAND
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-LGA (6x8)
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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GD5F1GQ4RF9IGY GD5F1GQ4xFxxG.pdf
GD5F1GQ4RF9IGY
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 1GBIT SPI/QUAD I/O 8LGA
Packaging: Tray
Package / Case: 8-VLGA Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NAND
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-LGA (6x8)
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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GD5F1GQ4UEYIGR GD5F1GQ4xFxxG.pdf
GD5F1GQ4UEYIGR
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 1GBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
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GD5F1GQ4UEYIGY GD5F1GQ4xFxxG.pdf
GD5F1GQ4UEYIGY
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 1GBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
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GD5F1GQ4UFYIGR GD5F1GQ4xFxxG.pdf
GD5F1GQ4UFYIGR
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 1GBIT SPI/QUAD 8WSON
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
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GD5F1GQ4UFYIGR GD5F1GQ4xFxxG.pdf
GD5F1GQ4UFYIGR
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 1GBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
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