Продукція > INFINEON (IRF) > Всі товари виробника INFINEON (IRF) (6) > Сторінка 1 з 1

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IRF240 IRF240 Infineon (IRF) pVersion=0046&contRep=ZT&docId=E1C04E3AF9AB8CF1A6F5005056AB5A8F&compId=irf240.pdf?ci_sign=b6b82cf2743ea4004300ef15307f152a80add23e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 125W; TO3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 125W
Case: TO3
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: tube
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IRFB31N20DPBF IRFB31N20DPBF Infineon (IRF) pVersion=0046&contRep=ZT&docId=E1C04E5921B6B8F1A6F5005056AB5A8F&compId=irfs31n20d.pdf?ci_sign=f909dd20d757c35ae1305b53a20c9cafbaf80f3f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 31A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 31A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
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IRG4PC50WPBF IRG4PC50WPBF Infineon (IRF) pVersion=0046&contRep=ZT&docId=E1C04E83594C24F1A6F5005056AB5A8F&compId=irg4pc50w.pdf?ci_sign=a4c09cc8951079bc7cd3b6689957abe2bbebe598 description Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 27A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 27A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 220A
Mounting: THT
Kind of package: tube
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IRGB20B60PD1PBF IRGB20B60PD1PBF Infineon (IRF) pVersion=0046&contRep=ZT&docId=E221DA6B22A5DCF1A303005056AB0C4F&compId=irgb20b60pd1pbf.pdf?ci_sign=0679f6e61a511364256320e70a92aa6777682d80 description Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 215W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 215W
Case: TO220AB
Mounting: THT
Kind of package: tube
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IRL1404ZSPBF IRL1404ZSPBF Infineon (IRF) pVersion=0046&contRep=ZT&docId=E1C04E895D7D79F1A6F5005056AB5A8F&compId=irl1404zpbf.pdf?ci_sign=edc0e4bb9b850a1e899b852b194f112cd23b55d1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 790A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 790A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IRLML2502TRPBF Infineon (IRF) pVersion=0046&contRep=ZT&docId=E1C04E8F5825FCF1A6F5005056AB5A8F&compId=irlml2502gpbf.pdf?ci_sign=7cd78ffae573a198f13da6c3bbdc34d8bfad9a85 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 8nC
On-state resistance: 45mΩ
Gate-source voltage: ±12V
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IRF240 pVersion=0046&contRep=ZT&docId=E1C04E3AF9AB8CF1A6F5005056AB5A8F&compId=irf240.pdf?ci_sign=b6b82cf2743ea4004300ef15307f152a80add23e
IRF240
Виробник: Infineon (IRF)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 125W; TO3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 125W
Case: TO3
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: tube
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IRFB31N20DPBF pVersion=0046&contRep=ZT&docId=E1C04E5921B6B8F1A6F5005056AB5A8F&compId=irfs31n20d.pdf?ci_sign=f909dd20d757c35ae1305b53a20c9cafbaf80f3f
IRFB31N20DPBF
Виробник: Infineon (IRF)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 31A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 31A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
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IRG4PC50WPBF description pVersion=0046&contRep=ZT&docId=E1C04E83594C24F1A6F5005056AB5A8F&compId=irg4pc50w.pdf?ci_sign=a4c09cc8951079bc7cd3b6689957abe2bbebe598
IRG4PC50WPBF
Виробник: Infineon (IRF)
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 27A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 27A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 220A
Mounting: THT
Kind of package: tube
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IRGB20B60PD1PBF description pVersion=0046&contRep=ZT&docId=E221DA6B22A5DCF1A303005056AB0C4F&compId=irgb20b60pd1pbf.pdf?ci_sign=0679f6e61a511364256320e70a92aa6777682d80
IRGB20B60PD1PBF
Виробник: Infineon (IRF)
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 215W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 215W
Case: TO220AB
Mounting: THT
Kind of package: tube
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IRL1404ZSPBF pVersion=0046&contRep=ZT&docId=E1C04E895D7D79F1A6F5005056AB5A8F&compId=irl1404zpbf.pdf?ci_sign=edc0e4bb9b850a1e899b852b194f112cd23b55d1
IRL1404ZSPBF
Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 790A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 790A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IRLML2502TRPBF pVersion=0046&contRep=ZT&docId=E1C04E8F5825FCF1A6F5005056AB5A8F&compId=irlml2502gpbf.pdf?ci_sign=7cd78ffae573a198f13da6c3bbdc34d8bfad9a85
Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 8nC
On-state resistance: 45mΩ
Gate-source voltage: ±12V
товару немає в наявності
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