Продукція > INFINEON (IRF) > Всі товари виробника INFINEON (IRF) (5) > Сторінка 1 з 1

Фото Назва Виробник Інформація Доступність
Ціна
IRF240 IRF240 Infineon (IRF) irf240.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 125W; TO3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 125W
Case: TO3
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
IRF7425PBF IRF7425PBF Infineon (IRF) pVersion=0046&contRep=ZT&docId=E1C04E4D16F119F1A6F5005056AB5A8F&compId=irf7425pbf.pdf?ci_sign=81dddf218e1b31c29598ff40a3f7ac4bdc2728db Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 8.2mΩ
Gate charge: 87nC
Gate-source voltage: ±12V
товару немає в наявності
В кошику  од. на суму  грн.
IRG4BC20UDPBF IRG4BC20UDPBF Infineon (IRF) pVersion=0046&contRep=ZT&docId=E1C04E7D505651F1A6F5005056AB5A8F&compId=irg4bc20ud.pdf?ci_sign=616ccab44e5e21b54f86bb4508ad123679c25a8a description Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 13A; 60W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 13A
Power dissipation: 60W
Case: TO220AB
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
IRLML2502TRPBF Infineon (IRF) irlml2502gpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
On-state resistance: 45mΩ
Gate charge: 8nC
Gate-source voltage: ±12V
товару немає в наявності
В кошику  од. на суму  грн.
IRLML6402TRPBF Infineon (IRF) irlml6402pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.7A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 8nC
On-state resistance: 65mΩ
Gate-source voltage: ±12V
товару немає в наявності
В кошику  од. на суму  грн.
IRF240 irf240.pdf
IRF240
Виробник: Infineon (IRF)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 125W; TO3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 125W
Case: TO3
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
IRF7425PBF pVersion=0046&contRep=ZT&docId=E1C04E4D16F119F1A6F5005056AB5A8F&compId=irf7425pbf.pdf?ci_sign=81dddf218e1b31c29598ff40a3f7ac4bdc2728db
IRF7425PBF
Виробник: Infineon (IRF)
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 8.2mΩ
Gate charge: 87nC
Gate-source voltage: ±12V
товару немає в наявності
В кошику  од. на суму  грн.
IRG4BC20UDPBF description pVersion=0046&contRep=ZT&docId=E1C04E7D505651F1A6F5005056AB5A8F&compId=irg4bc20ud.pdf?ci_sign=616ccab44e5e21b54f86bb4508ad123679c25a8a
IRG4BC20UDPBF
Виробник: Infineon (IRF)
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 13A; 60W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 13A
Power dissipation: 60W
Case: TO220AB
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
IRLML2502TRPBF irlml2502gpbf.pdf
Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
On-state resistance: 45mΩ
Gate charge: 8nC
Gate-source voltage: ±12V
товару немає в наявності
В кошику  од. на суму  грн.
IRLML6402TRPBF irlml6402pbf.pdf
Виробник: Infineon (IRF)
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.7A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 8nC
On-state resistance: 65mΩ
Gate-source voltage: ±12V
товару немає в наявності
В кошику  од. на суму  грн.