Продукція > INFINEON (IRF) > Всі товари виробника INFINEON (IRF) (6) > Сторінка 1 з 1

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AUIRF2804S AUIRF2804S Infineon (IRF) pVersion=0046&contRep=ZT&docId=E1C04DFEC1617BF1A6F5005056AB5A8F&compId=irf2804.pdf?ci_sign=1a9d3c5de401577578ccc09d152c5c33c6d2dbde Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 160nC
On-state resistance: 2mΩ
товару немає в наявності
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IRF240 IRF240 Infineon (IRF) pVersion=0046&contRep=ZT&docId=E1C04E3AF9AB8CF1A6F5005056AB5A8F&compId=irf240.pdf?ci_sign=b6b82cf2743ea4004300ef15307f152a80add23e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 125W; TO3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 125W
Case: TO3
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: tube
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IRF350 IRF350 Infineon (IRF) pVersion=0046&contRep=ZT&docId=E1C04EBFB088ECF1A6F5005056AB5A8F&compId=jantx2n6768.pdf?ci_sign=8e6f100d11f0516163ae6afdeb1c9ddab6355f2f description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 14A; 150W; TO3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 14A
Power dissipation: 150W
Case: TO3
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: tube
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IRF7103PBF IRF7103PBF Infineon (IRF) pVersion=0046&contRep=ZT&docId=E1C04E47020EA6F1A6F5005056AB5A8F&compId=irf7103.pdf?ci_sign=ffa8d0ccd2eb5a18b14023c4e9782fbcc0de0fd2 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 3A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 0.13Ω
Gate-source voltage: ±20V
Gate charge: 12nC
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IRFB23N20DPBF IRFB23N20DPBF Infineon (IRF) pVersion=0046&contRep=ZT&docId=E1C04E5921B695F1A6F5005056AB5A8F&compId=irfb23n20d.pdf?ci_sign=1ca50372e1988e8ccbb6817c94dc65387ac00fcf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
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IRFR2405PBF IRFR2405PBF Infineon (IRF) pVersion=0046&contRep=ZT&docId=E1C04E6B43C117F1A6F5005056AB5A8F&compId=irfr2405.pdf?ci_sign=aad40c755f38681b306cae62eab26e3965d0f88c description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 70nC
On-state resistance: 16mΩ
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AUIRF2804S pVersion=0046&contRep=ZT&docId=E1C04DFEC1617BF1A6F5005056AB5A8F&compId=irf2804.pdf?ci_sign=1a9d3c5de401577578ccc09d152c5c33c6d2dbde
AUIRF2804S
Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 160nC
On-state resistance: 2mΩ
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IRF240 pVersion=0046&contRep=ZT&docId=E1C04E3AF9AB8CF1A6F5005056AB5A8F&compId=irf240.pdf?ci_sign=b6b82cf2743ea4004300ef15307f152a80add23e
IRF240
Виробник: Infineon (IRF)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 125W; TO3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 125W
Case: TO3
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: tube
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IRF350 description pVersion=0046&contRep=ZT&docId=E1C04EBFB088ECF1A6F5005056AB5A8F&compId=jantx2n6768.pdf?ci_sign=8e6f100d11f0516163ae6afdeb1c9ddab6355f2f
IRF350
Виробник: Infineon (IRF)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 14A; 150W; TO3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 14A
Power dissipation: 150W
Case: TO3
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: tube
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IRF7103PBF pVersion=0046&contRep=ZT&docId=E1C04E47020EA6F1A6F5005056AB5A8F&compId=irf7103.pdf?ci_sign=ffa8d0ccd2eb5a18b14023c4e9782fbcc0de0fd2
IRF7103PBF
Виробник: Infineon (IRF)
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 3A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 0.13Ω
Gate-source voltage: ±20V
Gate charge: 12nC
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IRFB23N20DPBF pVersion=0046&contRep=ZT&docId=E1C04E5921B695F1A6F5005056AB5A8F&compId=irfb23n20d.pdf?ci_sign=1ca50372e1988e8ccbb6817c94dc65387ac00fcf
IRFB23N20DPBF
Виробник: Infineon (IRF)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
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IRFR2405PBF description pVersion=0046&contRep=ZT&docId=E1C04E6B43C117F1A6F5005056AB5A8F&compId=irfr2405.pdf?ci_sign=aad40c755f38681b306cae62eab26e3965d0f88c
IRFR2405PBF
Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 70nC
On-state resistance: 16mΩ
товару немає в наявності
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