Продукція > INFINEON (IRF) > Всі товари виробника INFINEON (IRF) (3) > Сторінка 1 з 1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IRG4BC30KDPBF | Infineon (IRF) |
  Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 28A; 100W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 28A Power dissipation: 100W Case: TO220AB Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. |
| IRLML2502TRPBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.25W; SOT23 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.2A Power dissipation: 1.25W Case: SOT23 Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level On-state resistance: 45mΩ Gate charge: 8nC Gate-source voltage: ±12V |
товару немає в наявності |
В кошику од. на суму грн. | |
| IRLML6402TRPBF | Infineon (IRF) |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; 1.3W; SOT23 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.7A Power dissipation: 1.3W Case: SOT23 Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level Gate charge: 8nC On-state resistance: 65mΩ Gate-source voltage: ±12V |
товару немає в наявності |
В кошику од. на суму грн. |
| IRG4BC30KDPBF | |
|
Виробник: Infineon (IRF)
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 100W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 28A
Power dissipation: 100W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 100W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 28A
Power dissipation: 100W
Case: TO220AB
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| IRLML2502TRPBF |
|
Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
On-state resistance: 45mΩ
Gate charge: 8nC
Gate-source voltage: ±12V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
On-state resistance: 45mΩ
Gate charge: 8nC
Gate-source voltage: ±12V
товару немає в наявності
В кошику
од. на суму грн.
| IRLML6402TRPBF |
|
Виробник: Infineon (IRF)
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.7A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 8nC
On-state resistance: 65mΩ
Gate-source voltage: ±12V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.7A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 8nC
On-state resistance: 65mΩ
Gate-source voltage: ±12V
товару немає в наявності
В кошику
од. на суму грн.