Продукція > INFINEON (IRF) > Всі товари виробника INFINEON (IRF) (4) > Сторінка 1 з 1

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IRF7425PBF IRF7425PBF Infineon (IRF) irf7425pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 8.2mΩ
Gate charge: 87nC
Gate-source voltage: ±12V
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IRFR2405PBF IRFR2405PBF Infineon (IRF) irfr2405.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 70nC
On-state resistance: 16mΩ
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IRG4BC20UDPBF IRG4BC20UDPBF Infineon (IRF) irg4bc20ud.pdf description Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 13A; 60W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 13A
Power dissipation: 60W
Case: TO220AB
Mounting: THT
Kind of package: tube
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IRLML2502TRPBF Infineon (IRF) irlml2502gpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
On-state resistance: 45mΩ
Gate charge: 8nC
Gate-source voltage: ±12V
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IRF7425PBF irf7425pbf.pdf
IRF7425PBF
Виробник: Infineon (IRF)
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 8.2mΩ
Gate charge: 87nC
Gate-source voltage: ±12V
товару немає в наявності
В кошику  од. на суму  грн.
IRFR2405PBF description irfr2405.pdf
IRFR2405PBF
Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 70nC
On-state resistance: 16mΩ
товару немає в наявності
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IRG4BC20UDPBF description irg4bc20ud.pdf
IRG4BC20UDPBF
Виробник: Infineon (IRF)
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 13A; 60W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 13A
Power dissipation: 60W
Case: TO220AB
Mounting: THT
Kind of package: tube
товару немає в наявності
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IRLML2502TRPBF irlml2502gpbf.pdf
Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
On-state resistance: 45mΩ
Gate charge: 8nC
Gate-source voltage: ±12V
товару немає в наявності
В кошику  од. на суму  грн.