Продукція > INFINEON (IRF) > Всі товари виробника INFINEON (IRF) (5) > Сторінка 1 з 1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IRF240 | Infineon (IRF) |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 18A; 125W; TO3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 18A Power dissipation: 125W Case: TO3 Mounting: THT Kind of channel: enhancement Technology: HEXFET® Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRF7425PBF | Infineon (IRF) |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -15A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -15A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of channel: enhancement On-state resistance: 8.2mΩ Gate charge: 87nC Gate-source voltage: ±12V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRG4BC20UDPBF | Infineon (IRF) |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 13A; 60W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 13A Power dissipation: 60W Case: TO220AB Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRGB20B60PD1PBF | Infineon (IRF) |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 40A; 215W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 215W Case: TO220AB Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. |
| IRLML2502TRPBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.25W; SOT23 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.2A Power dissipation: 1.25W Case: SOT23 Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level On-state resistance: 45mΩ Gate charge: 8nC Gate-source voltage: ±12V |
товару немає в наявності |
В кошику од. на суму грн. |
| IRF240 |
|
Виробник: Infineon (IRF)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 125W; TO3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 125W
Case: TO3
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 125W; TO3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 125W
Case: TO3
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| IRF7425PBF |
|
Виробник: Infineon (IRF)
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 8.2mΩ
Gate charge: 87nC
Gate-source voltage: ±12V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 8.2mΩ
Gate charge: 87nC
Gate-source voltage: ±12V
товару немає в наявності
В кошику
од. на суму грн.
| IRG4BC20UDPBF | |
|
Виробник: Infineon (IRF)
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 13A; 60W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 13A
Power dissipation: 60W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 13A; 60W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 13A
Power dissipation: 60W
Case: TO220AB
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| IRGB20B60PD1PBF | |
|
Виробник: Infineon (IRF)
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 215W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 215W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 215W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 215W
Case: TO220AB
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| IRLML2502TRPBF |
|
Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
On-state resistance: 45mΩ
Gate charge: 8nC
Gate-source voltage: ±12V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
On-state resistance: 45mΩ
Gate charge: 8nC
Gate-source voltage: ±12V
товару немає в наявності
В кошику
од. на суму грн.