Продукція > INFINEON (IRF) > Всі товари виробника INFINEON (IRF) (7) > Сторінка 1 з 1
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
---|---|---|---|---|---|
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IRF240 | Infineon (IRF) |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 125W; TO3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 18A Power dissipation: 125W Case: TO3 Mounting: THT Kind of channel: enhancement Technology: HEXFET® Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. |
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IRFB31N20DPBF | Infineon (IRF) |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 31A; 200W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 31A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 82mΩ Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
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IRG4PC50WPBF | Infineon (IRF) |
![]() ![]() Description: Transistor: IGBT; 600V; 27A; 200W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 27A Power dissipation: 200W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 220A Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. |
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IRGB20B60PD1PBF | Infineon (IRF) |
![]() ![]() Description: Transistor: IGBT; 600V; 40A; 215W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 215W Case: TO220AB Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. |
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IRL1404ZSPBF | Infineon (IRF) |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 790A; 230W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 790A Power dissipation: 230W Case: D2PAK Gate-source voltage: ±16V On-state resistance: 3.1mΩ Mounting: SMD Gate charge: 75nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: logic level |
товару немає в наявності |
В кошику од. на суму грн. |
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IRLL014NPBF | Infineon (IRF) |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 55V; 2A; 2.1W; SOT223 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 2A Power dissipation: 2.1W Case: SOT223 Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level Gate-source voltage: ±16V Gate charge: 9.5nC On-state resistance: 0.14Ω |
товару немає в наявності |
В кошику од. на суму грн. |
IRLML2502TRPBF | Infineon (IRF) |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.25W; SOT23 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.2A Power dissipation: 1.25W Case: SOT23 Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level Gate charge: 8nC On-state resistance: 45mΩ Gate-source voltage: ±12V |
товару немає в наявності |
В кошику од. на суму грн. |
IRF240 |
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Виробник: Infineon (IRF)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 125W; TO3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 125W
Case: TO3
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 125W; TO3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 125W
Case: TO3
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
IRFB31N20DPBF |
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Виробник: Infineon (IRF)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 31A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 31A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 31A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 31A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
IRG4PC50WPBF | ![]() |
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Виробник: Infineon (IRF)
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 27A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 27A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 220A
Mounting: THT
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 27A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 27A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 220A
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
IRGB20B60PD1PBF | ![]() |
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Виробник: Infineon (IRF)
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 215W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 215W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 215W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 215W
Case: TO220AB
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
IRL1404ZSPBF |
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Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 790A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 790A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 790A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 790A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
товару немає в наявності
В кошику
од. на суму грн.
IRLL014NPBF | ![]() |
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Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 2A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate-source voltage: ±16V
Gate charge: 9.5nC
On-state resistance: 0.14Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 2A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate-source voltage: ±16V
Gate charge: 9.5nC
On-state resistance: 0.14Ω
товару немає в наявності
В кошику
од. на суму грн.
IRLML2502TRPBF |
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Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 8nC
On-state resistance: 45mΩ
Gate-source voltage: ±12V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 8nC
On-state resistance: 45mΩ
Gate-source voltage: ±12V
товару немає в наявності
В кошику
од. на суму грн.