Продукція > INFINEON (IRF) > Всі товари виробника INFINEON (IRF) (5) > Сторінка 1 з 1

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IRF240 IRF240 Infineon (IRF) irf240.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 125W; TO3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 125W
Case: TO3
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: tube
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IRF7425PBF IRF7425PBF Infineon (IRF) irf7425pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Gate charge: 87nC
On-state resistance: 8.2mΩ
Gate-source voltage: ±12V
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IRGB15B60KDPBF IRGB15B60KDPBF Infineon (IRF) irgs15b60kdpbf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 31A; 139W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 31A
Power dissipation: 139W
Case: TO220AB
Mounting: THT
Kind of package: tube
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IRLL014NPBF IRLL014NPBF Infineon (IRF) pVersion=0046&contRep=ZT&docId=E1C04E8F5825AFF1A6F5005056AB5A8F&compId=irll014n.pdf?ci_sign=81e5b8465477fd181094b39f17e1ca58ac3541f1 description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 2A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate-source voltage: ±16V
Gate charge: 9.5nC
On-state resistance: 0.14Ω
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IRLML2502TRPBF Infineon (IRF) pVersion=0046&contRep=ZT&docId=E1C04E8F5825FCF1A6F5005056AB5A8F&compId=irlml2502gpbf.pdf?ci_sign=7cd78ffae573a198f13da6c3bbdc34d8bfad9a85 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 8nC
On-state resistance: 45mΩ
Gate-source voltage: ±12V
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IRF240 irf240.pdf
IRF240
Виробник: Infineon (IRF)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 125W; TO3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 125W
Case: TO3
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: tube
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IRF7425PBF irf7425pbf.pdf
IRF7425PBF
Виробник: Infineon (IRF)
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Gate charge: 87nC
On-state resistance: 8.2mΩ
Gate-source voltage: ±12V
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IRGB15B60KDPBF irgs15b60kdpbf.pdf
IRGB15B60KDPBF
Виробник: Infineon (IRF)
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 31A; 139W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 31A
Power dissipation: 139W
Case: TO220AB
Mounting: THT
Kind of package: tube
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IRLL014NPBF description pVersion=0046&contRep=ZT&docId=E1C04E8F5825AFF1A6F5005056AB5A8F&compId=irll014n.pdf?ci_sign=81e5b8465477fd181094b39f17e1ca58ac3541f1
IRLL014NPBF
Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 2A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate-source voltage: ±16V
Gate charge: 9.5nC
On-state resistance: 0.14Ω
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IRLML2502TRPBF pVersion=0046&contRep=ZT&docId=E1C04E8F5825FCF1A6F5005056AB5A8F&compId=irlml2502gpbf.pdf?ci_sign=7cd78ffae573a198f13da6c3bbdc34d8bfad9a85
Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 8nC
On-state resistance: 45mΩ
Gate-source voltage: ±12V
товару немає в наявності
В кошику  од. на суму  грн.