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| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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AUIRF2804S | Infineon (IRF) |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 270A Power dissipation: 300W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Gate charge: 160nC Kind of channel: enhanced |
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IRF1010NSPBF | Infineon (IRF) |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 60A; 180W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 60A Power dissipation: 180W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 0.12µC Kind of channel: enhanced |
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IRF240 | Infineon (IRF) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 125W; TO3 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 18A Power dissipation: 125W Case: TO3 Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IRF3205SPBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 110A Power dissipation: 200W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Gate charge: 97.3nC Kind of channel: enhanced |
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IRF330 | Infineon (IRF) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; 75W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 400V Drain current: 5.5A Power dissipation: 75W Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IRF350 | Infineon (IRF) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 14A; 150W; TO3 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 400V Drain current: 14A Power dissipation: 150W Case: TO3 Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IRF3710SPBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 57A Power dissipation: 200W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Gate charge: 86.7nC Kind of channel: enhanced |
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IRF5210SPBF | Infineon (IRF) |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 3.8W; D2PAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -40A Power dissipation: 3.8W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Gate charge: 0.12µC Kind of channel: enhanced |
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IRF5305SPBF | Infineon (IRF) |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; D2PAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -31A Power dissipation: 110W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Gate charge: 42nC Kind of channel: enhanced |
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IRF7103PBF | Infineon (IRF) |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 3A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 50V Drain current: 3A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 12nC Kind of channel: enhanced |
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IRF7309PBF | Infineon (IRF) |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8 Type of transistor: N/P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 4/-3A Power dissipation: 1.4W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.05/0.1Ω Mounting: SMD Gate charge: 16.7/16.7nC Kind of channel: enhanced |
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IRF7313PBF | Infineon (IRF) |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 6.5A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.5A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 29mΩ Mounting: SMD Gate charge: 22nC Kind of channel: enhanced |
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IRF7317PBF | Infineon (IRF) |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 6.6/-5.3A; 2W; SO8 Type of transistor: N/P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 6.6/-5.3A Power dissipation: 2W Case: SO8 Gate-source voltage: ±12V On-state resistance: 29/58mΩ Mounting: SMD Gate charge: 18/19nC Kind of channel: enhanced |
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IRF7319PBF | Infineon (IRF) |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.5/-4.9A; 2W; SO8 Type of transistor: N/P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 6.5/-4.9A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 29/58mΩ Mounting: SMD Gate charge: 22/23nC Kind of channel: enhanced |
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IRF7380PBF | Infineon (IRF) |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 80V; 3.6A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 3.6A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 73mΩ Mounting: SMD Gate charge: 15nC Kind of channel: enhanced |
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IRF7389PBF | Infineon (IRF) |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7.3/-5.3A; 2.5W; SO8 Type of transistor: N/P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 7.3/-5.3A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 29/58mΩ Mounting: SMD Gate charge: 22/23nC Kind of channel: enhanced |
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IRF7413PBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 13A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 44nC Kind of channel: enhanced |
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IRF7416PBF | Infineon (IRF) |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -10A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -10A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 61nC Kind of channel: enhanced |
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IRF7424PBF | Infineon (IRF) |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -11A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 75nC Kind of channel: enhanced |
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IRF7425PBF | Infineon (IRF) |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -15A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -15A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 8.2mΩ Mounting: SMD Gate charge: 87nC Kind of channel: enhanced |
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IRF7493PBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 9.2A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 9.2A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 31nC Kind of channel: enhanced |
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IRF7831PBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 21A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 40nC Kind of channel: enhanced |
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IRF7855PBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 9.4mΩ Mounting: SMD Gate charge: 26nC Kind of channel: enhanced |
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IRF8707PBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 11A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 11.9mΩ Mounting: SMD Gate charge: 6.2nC Kind of channel: enhanced |
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IRF8788PBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 24A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 24A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 44nC Kind of channel: enhanced |
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IRF9530NSPBF | Infineon (IRF) |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -14A; 3.8W; D2PAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -14A Power dissipation: 3.8W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 38.7nC Kind of channel: enhanced |
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IRF9540NSPBF | Infineon (IRF) |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 3.8W; D2PAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -23A Power dissipation: 3.8W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.117Ω Mounting: SMD Gate charge: 64.7nC Kind of channel: enhanced |
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IRFL4105PBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 3.7A; 2.1W; SOT223 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 3.7A Power dissipation: 2.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 23nC Kind of channel: enhanced |
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IRFL4310PBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 2.1W; SOT223 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.6A Power dissipation: 2.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 17nC Kind of channel: enhanced |
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IRFR120NPBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 9.1A Power dissipation: 39W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.21Ω Mounting: SMD Gate charge: 16.7nC Kind of channel: enhanced |
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IRFR120ZPBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8.7A; 35W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 8.7A Power dissipation: 35W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 6.9nC Kind of channel: enhanced |
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IRFR220NPBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 43W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 5A Power dissipation: 43W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 15nC Kind of channel: enhanced |
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IRFR2405PBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 56A Power dissipation: 110W Case: DPAK Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 70nC Kind of channel: enhanced |
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IRFR3710ZPBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 140W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 56A Power dissipation: 140W Case: DPAK Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 69nC Kind of channel: enhanced |
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IRFR3910PBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Power dissipation: 52W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.115Ω Mounting: SMD Gate charge: 29.3nC Kind of channel: enhanced |
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IRFR48ZPBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 62A; 91W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 62A Power dissipation: 91W Case: DPAK Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 40nC Kind of channel: enhanced |
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IRFR5305PBF | Infineon (IRF) |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; DPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -28A Power dissipation: 89W Case: DPAK Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: SMD Gate charge: 42nC Kind of channel: enhanced |
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IRFR9024NPBF | Infineon (IRF) |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -11A Power dissipation: 38W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.175Ω Mounting: SMD Gate charge: 12.7nC Kind of channel: enhanced |
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IRFS4127PBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 72A; 375W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 72A Power dissipation: 375W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 0.1µC Kind of channel: enhanced |
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IRFS4227PBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 62A; 330W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 62A Power dissipation: 330W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 26mΩ Mounting: SMD Gate charge: 70nC Kind of channel: enhanced |
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IRFS4321PBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 83A Power dissipation: 330W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 15mΩ Mounting: SMD Gate charge: 71nC Kind of channel: enhanced |
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IRFS52N15DPBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 60A Power dissipation: 320W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 32mΩ Mounting: SMD Gate charge: 60nC Kind of channel: enhanced |
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IRFZ44NSPBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 49A; 110W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 49A Power dissipation: 110W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 17.5mΩ Mounting: SMD Gate charge: 42nC Kind of package: tube Kind of channel: enhanced |
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IRG4BC30KDPBF | Infineon (IRF) |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 28A; 100W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 28A Power dissipation: 100W Case: TO220AB Mounting: THT Kind of package: tube |
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IRG4PC50WPBF | Infineon (IRF) |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 27A; 200W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 27A Power dissipation: 200W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 220A Mounting: THT Kind of package: tube |
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IRGB15B60KDPBF | Infineon (IRF) |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 31A; 139W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 31A Power dissipation: 139W Case: TO220AB Mounting: THT Kind of package: tube |
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IRGB20B60PD1PBF | Infineon (IRF) |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 40A; 215W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 215W Case: TO220AB Mounting: THT Kind of package: tube |
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IRL6342PBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9.9A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 9.9A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of channel: enhanced Features of semiconductor devices: logic level |
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IRLL014NPBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 2A; 2.1W; SOT223 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 2A Power dissipation: 2.1W Case: SOT223 Gate-source voltage: ±16V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 9.5nC Kind of channel: enhanced Features of semiconductor devices: logic level |
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IRLL024NPBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 4.4A Power dissipation: 2.1W Case: SOT223 Gate-source voltage: ±16V On-state resistance: 65mΩ Mounting: SMD Gate charge: 10.4nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: logic level |
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| IRLML2502TRPBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.25W; SOT23 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.2A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 45mΩ Mounting: SMD Gate charge: 8nC Kind of channel: enhanced Features of semiconductor devices: logic level |
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IRLR120NPBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 39W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 11A Power dissipation: 39W Case: DPAK Gate-source voltage: ±16V On-state resistance: 0.185Ω Mounting: SMD Gate charge: 13.3nC Kind of channel: enhanced Features of semiconductor devices: logic level |
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IRLR3103PBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 46A; 69W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 46A Power dissipation: 69W Case: DPAK Mounting: SMD Kind of channel: enhanced Features of semiconductor devices: logic level |
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IRLR3410PBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Power dissipation: 52W Case: DPAK Gate-source voltage: ±16V On-state resistance: 0.105Ω Mounting: SMD Gate charge: 22.7nC Kind of channel: enhanced Features of semiconductor devices: logic level |
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IRLR3705ZPBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 89A Power dissipation: 130W Case: DPAK Gate-source voltage: ±16V On-state resistance: 8mΩ Mounting: SMD Gate charge: 44nC Kind of channel: enhanced Features of semiconductor devices: logic level |
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IRLR8256PBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 81A; 63W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 81A Power dissipation: 63W Case: DPAK Gate-source voltage: ±20V On-state resistance: 5.7mΩ Mounting: SMD Gate charge: 10nC Kind of channel: enhanced Features of semiconductor devices: logic level |
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IRLR8726PBF | Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 86A; 75W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 86A Power dissipation: 75W Case: DPAK Gate-source voltage: ±20V On-state resistance: 5.8mΩ Mounting: SMD Gate charge: 15nC Kind of channel: enhanced Features of semiconductor devices: logic level |
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| PVI1050NS-TPBF | Infineon (IRF) |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 2.5V; Gull wing 8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: photodiode Insulation voltage: 2.5V Case: Gull wing 8 Turn-on time: 0.3ms Turn-off time: 220µs Manufacturer series: PVI-NPbF |
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| PVI1050NS-TPBF | Infineon (IRF) |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 2.5V; Gull wing 8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: photodiode Insulation voltage: 2.5V Case: Gull wing 8 Turn-on time: 0.3ms Turn-off time: 220µs Manufacturer series: PVI-NPbF кількість в упаковці: 750 шт |
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| PVI5013RPBF | Infineon (IRF) |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; DIP8; PVI5013RPbF Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: photodiode Insulation voltage: 3.75kV Case: DIP8 Turn-on time: 5ms Turn-off time: 0.25ms Manufacturer series: PVI5013RPbF |
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| AUIRF2804S |
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Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 160nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 160nC
Kind of channel: enhanced
товар відсутній
| IRF1010NSPBF | |
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Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 60A; 180W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 60A
Power dissipation: 180W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 60A; 180W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 60A
Power dissipation: 180W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of channel: enhanced
товар відсутній
| IRF240 |
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Виробник: Infineon (IRF)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 125W; TO3
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 125W
Case: TO3
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 125W; TO3
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 125W
Case: TO3
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRF3205SPBF |
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Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 97.3nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 97.3nC
Kind of channel: enhanced
товар відсутній
| IRF330 |
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Виробник: Infineon (IRF)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; 75W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Power dissipation: 75W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; 75W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Power dissipation: 75W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRF350 | |
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Виробник: Infineon (IRF)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 14A; 150W; TO3
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 14A
Power dissipation: 150W
Case: TO3
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 14A; 150W; TO3
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 14A
Power dissipation: 150W
Case: TO3
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRF3710SPBF |
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Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 86.7nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 86.7nC
Kind of channel: enhanced
товар відсутній
| IRF5210SPBF |
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Виробник: Infineon (IRF)
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -40A
Power dissipation: 3.8W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -40A
Power dissipation: 3.8W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of channel: enhanced
товар відсутній
| IRF5305SPBF |
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Виробник: Infineon (IRF)
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhanced
товар відсутній
| IRF7103PBF |
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Виробник: Infineon (IRF)
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 3A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 12nC
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 3A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 12nC
Kind of channel: enhanced
товар відсутній
| IRF7309PBF | |
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Виробник: Infineon (IRF)
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.05/0.1Ω
Mounting: SMD
Gate charge: 16.7/16.7nC
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.05/0.1Ω
Mounting: SMD
Gate charge: 16.7/16.7nC
Kind of channel: enhanced
товар відсутній
| IRF7313PBF | |
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Виробник: Infineon (IRF)
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 6.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 22nC
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 6.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 22nC
Kind of channel: enhanced
товар відсутній
| IRF7317PBF | |
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Виробник: Infineon (IRF)
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 6.6/-5.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 6.6/-5.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 29/58mΩ
Mounting: SMD
Gate charge: 18/19nC
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 6.6/-5.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 6.6/-5.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 29/58mΩ
Mounting: SMD
Gate charge: 18/19nC
Kind of channel: enhanced
товар відсутній
| IRF7319PBF | |
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Виробник: Infineon (IRF)
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.5/-4.9A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.5/-4.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29/58mΩ
Mounting: SMD
Gate charge: 22/23nC
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.5/-4.9A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.5/-4.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29/58mΩ
Mounting: SMD
Gate charge: 22/23nC
Kind of channel: enhanced
товар відсутній
| IRF7380PBF |
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Виробник: Infineon (IRF)
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 3.6A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3.6A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 73mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 3.6A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3.6A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 73mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhanced
товар відсутній
| IRF7389PBF | |
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Виробник: Infineon (IRF)
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7.3/-5.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7.3/-5.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29/58mΩ
Mounting: SMD
Gate charge: 22/23nC
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7.3/-5.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7.3/-5.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29/58mΩ
Mounting: SMD
Gate charge: 22/23nC
Kind of channel: enhanced
товар відсутній
| IRF7413PBF | |
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Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhanced
товар відсутній
| IRF7416PBF |
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Виробник: Infineon (IRF)
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 61nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 61nC
Kind of channel: enhanced
товар відсутній
| IRF7424PBF |
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Виробник: Infineon (IRF)
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 75nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 75nC
Kind of channel: enhanced
товар відсутній
| IRF7425PBF |
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Виробник: Infineon (IRF)
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -15A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 87nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -15A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 87nC
Kind of channel: enhanced
товар відсутній
| IRF7493PBF | |
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Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 9.2A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 9.2A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 31nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 9.2A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 9.2A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 31nC
Kind of channel: enhanced
товар відсутній
| IRF7831PBF |
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Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 40nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 40nC
Kind of channel: enhanced
товар відсутній
| IRF7855PBF |
|
Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 9.4mΩ
Mounting: SMD
Gate charge: 26nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 9.4mΩ
Mounting: SMD
Gate charge: 26nC
Kind of channel: enhanced
товар відсутній
| IRF8707PBF | |
|
Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 11.9mΩ
Mounting: SMD
Gate charge: 6.2nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 11.9mΩ
Mounting: SMD
Gate charge: 6.2nC
Kind of channel: enhanced
товар відсутній
| IRF8788PBF | |
|
Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhanced
товар відсутній
| IRF9530NSPBF | |
|
Виробник: Infineon (IRF)
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -14A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -14A
Power dissipation: 3.8W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 38.7nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -14A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -14A
Power dissipation: 3.8W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 38.7nC
Kind of channel: enhanced
товар відсутній
| IRF9540NSPBF | |
|
Виробник: Infineon (IRF)
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 3.8W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.117Ω
Mounting: SMD
Gate charge: 64.7nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 3.8W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.117Ω
Mounting: SMD
Gate charge: 64.7nC
Kind of channel: enhanced
товар відсутній
| IRFL4105PBF | |
|
Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.7A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3.7A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.7A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3.7A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhanced
товар відсутній
| IRFL4310PBF | |
|
Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
товар відсутній
| IRFR120NPBF | |
|
Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.1A
Power dissipation: 39W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 16.7nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.1A
Power dissipation: 39W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 16.7nC
Kind of channel: enhanced
товар відсутній
| IRFR120ZPBF |
|
Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.7A; 35W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.7A
Power dissipation: 35W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 6.9nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.7A; 35W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.7A
Power dissipation: 35W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 6.9nC
Kind of channel: enhanced
товар відсутній
| IRFR220NPBF | |
|
Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 43W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5A
Power dissipation: 43W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 43W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5A
Power dissipation: 43W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhanced
товар відсутній
| IRFR2405PBF | |
|
Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 70nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 70nC
Kind of channel: enhanced
товар відсутній
| IRFR3710ZPBF |
|
Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 140W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 69nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 140W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 69nC
Kind of channel: enhanced
товар відсутній
| IRFR3910PBF | |
|
Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.115Ω
Mounting: SMD
Gate charge: 29.3nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.115Ω
Mounting: SMD
Gate charge: 29.3nC
Kind of channel: enhanced
товар відсутній
| IRFR48ZPBF | |
|
Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 62A; 91W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 62A
Power dissipation: 91W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 40nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 62A; 91W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 62A
Power dissipation: 91W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 40nC
Kind of channel: enhanced
товар відсутній
| IRFR5305PBF |
|
Виробник: Infineon (IRF)
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhanced
товар відсутній
| IRFR9024NPBF |
|
Виробник: Infineon (IRF)
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: SMD
Gate charge: 12.7nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: SMD
Gate charge: 12.7nC
Kind of channel: enhanced
товар відсутній
| IRFS4127PBF | |
|
Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 72A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 72A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 72A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 72A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of channel: enhanced
товар відсутній
| IRFS4227PBF |
|
Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 62A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 62A
Power dissipation: 330W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 70nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 62A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 62A
Power dissipation: 330W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 70nC
Kind of channel: enhanced
товар відсутній
| IRFS4321PBF |
|
Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 330W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 71nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 330W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 71nC
Kind of channel: enhanced
товар відсутній
| IRFS52N15DPBF |
|
Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 60nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 60nC
Kind of channel: enhanced
товар відсутній
| IRFZ44NSPBF | |
|
Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 49A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 49A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 49A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 49A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRG4BC30KDPBF | |
|
Виробник: Infineon (IRF)
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 100W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 28A
Power dissipation: 100W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 100W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 28A
Power dissipation: 100W
Case: TO220AB
Mounting: THT
Kind of package: tube
товар відсутній
| IRG4PC50WPBF | |
|
Виробник: Infineon (IRF)
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 27A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 27A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 220A
Mounting: THT
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 27A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 27A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 220A
Mounting: THT
Kind of package: tube
товар відсутній
| IRGB15B60KDPBF |
|
Виробник: Infineon (IRF)
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 31A; 139W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 31A
Power dissipation: 139W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 31A; 139W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 31A
Power dissipation: 139W
Case: TO220AB
Mounting: THT
Kind of package: tube
товар відсутній
| IRGB20B60PD1PBF | |
|
Виробник: Infineon (IRF)
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 215W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 215W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 215W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 215W
Case: TO220AB
Mounting: THT
Kind of package: tube
товар відсутній
| IRL6342PBF |
|
Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.9A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.9A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.9A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.9A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| IRLL014NPBF | |
|
Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 2A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 2A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| IRLL024NPBF | |
|
Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.4A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 10.4nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.4A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 10.4nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| IRLML2502TRPBF |
|
Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 8nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 8nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| IRLR120NPBF | |
|
Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 39W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 39W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 13.3nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 39W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 39W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 13.3nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| IRLR3103PBF | |
|
Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; 69W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Power dissipation: 69W
Case: DPAK
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; 69W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Power dissipation: 69W
Case: DPAK
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| IRLR3410PBF | |
|
Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 22.7nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 22.7nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| IRLR3705ZPBF |
|
Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 130W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 130W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| IRLR8256PBF | |
|
Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 81A; 63W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 81A
Power dissipation: 63W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: SMD
Gate charge: 10nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 81A; 63W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 81A
Power dissipation: 63W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: SMD
Gate charge: 10nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| IRLR8726PBF | |
|
Виробник: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 86A; 75W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 86A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 86A; 75W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 86A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| PVI1050NS-TPBF |
|
Виробник: Infineon (IRF)
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 2.5V; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 2.5V
Case: Gull wing 8
Turn-on time: 0.3ms
Turn-off time: 220µs
Manufacturer series: PVI-NPbF
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 2.5V; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 2.5V
Case: Gull wing 8
Turn-on time: 0.3ms
Turn-off time: 220µs
Manufacturer series: PVI-NPbF
товар відсутній
| PVI1050NS-TPBF |
|
Виробник: Infineon (IRF)
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 2.5V; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 2.5V
Case: Gull wing 8
Turn-on time: 0.3ms
Turn-off time: 220µs
Manufacturer series: PVI-NPbF
кількість в упаковці: 750 шт
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 2.5V; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 2.5V
Case: Gull wing 8
Turn-on time: 0.3ms
Turn-off time: 220µs
Manufacturer series: PVI-NPbF
кількість в упаковці: 750 шт
товар відсутній
| PVI5013RPBF |
|
Виробник: Infineon (IRF)
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; DIP8; PVI5013RPbF
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: DIP8
Turn-on time: 5ms
Turn-off time: 0.25ms
Manufacturer series: PVI5013RPbF
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; DIP8; PVI5013RPbF
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: DIP8
Turn-on time: 5ms
Turn-off time: 0.25ms
Manufacturer series: PVI5013RPbF
товар відсутній
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