| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| IS43DR86400E-3DBL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60 Operating temperature: 0...85°C Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TWBGA60 Access time: 15ns Supply voltage: 1.7...1.9V DC Clock frequency: 333MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: DDR2; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS43DR86400E-3DBLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60 Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TWBGA60 Access time: 15ns Supply voltage: 1.7...1.9V DC Clock frequency: 333MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: DDR2; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS43DR86400E-3DBLI-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60 Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TWBGA60 Access time: 15ns Supply voltage: 1.7...1.9V DC Clock frequency: 333MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: DDR2; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS43DR86400E-25DBLI-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60 Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TWBGA60 Access time: 12.5ns Supply voltage: 1.7...1.9V DC Clock frequency: 400MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: DDR2; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS34ML04G081-TLI | ISSI |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 4GbFLASH; parallel 8bit; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NAND Memory: 4Gb FLASH Operating voltage: 2.7...3.6V Mounting: SMD Operating temperature: -40...85°C Case: TSOP48 Kind of interface: parallel Interface: parallel 8bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS42S16100H-7TLI-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II Type of integrated circuit: DRAM memory Mounting: SMD Kind of package: reel; tape Kind of interface: parallel Kind of memory: SDRAM Case: TSOP50 II Operating temperature: -40...85°C Access time: 7ns Supply voltage: 3.3V DC Memory: 16Mb DRAM Clock frequency: 143MHz Memory organisation: 512kx16bitx2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS42S16100H-6BLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Mounting: SMD Kind of package: in-tray; tube Kind of interface: parallel Kind of memory: SDRAM Case: TFBGA60 Operating temperature: -40...85°C Access time: 6ns Supply voltage: 3...3.6V DC Memory: 16Mb DRAM Clock frequency: 166MHz Memory organisation: 512kx16bitx2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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IS61WV20488BLL-10TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 16MbSRAM; 2048x8bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 2048x8bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
на замовлення 131 шт: термін постачання 21-30 дні (днів) |
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| IS61WV102416EDBLL-10B2LI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS64LF12832A-7.5TQLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel Kind of package: in-tray; tube Kind of interface: parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Operating temperature: -40...125°C Access time: 7.5ns Operating voltage: 3.3V Memory: 4Mb SRAM Memory organisation: 128kx32bit Type of integrated circuit: SRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS64LF12832A-7.5TQLA3-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel Kind of package: reel; tape Kind of interface: parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Operating temperature: -40...125°C Access time: 7.5ns Operating voltage: 3.3V Memory: 4Mb SRAM Memory organisation: 128kx32bit Type of integrated circuit: SRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS64LPS12832A-200TQLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 3.1ns; QFP100; parallel Kind of package: in-tray; tube Kind of interface: parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Operating temperature: -40...125°C Access time: 3.1ns Operating voltage: 3.3V Memory: 4Mb SRAM Memory organisation: 128kx32bit Type of integrated circuit: SRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS64LPS12832A-200TQLA3-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 3.1ns; QFP100; parallel Kind of package: reel; tape Kind of interface: parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Operating temperature: -40...125°C Access time: 3.1ns Operating voltage: 3.3V Memory: 4Mb SRAM Memory organisation: 128kx32bit Type of integrated circuit: SRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS61LPS25618A-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100 Type of integrated circuit: SRAM memory Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Kind of memory: SRAM Operating temperature: -40...85°C Access time: 3.1ns Operating voltage: 3.3V Memory organisation: 256kx18bit Memory: 4.5Mb SRAM Case: QFP100 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS61LPS25618EC-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100 Type of integrated circuit: SRAM memory Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Kind of memory: SRAM Operating temperature: -40...85°C Access time: 3.1ns Operating voltage: 3.3V Memory organisation: 256kx18bit Memory: 4.5Mb SRAM Case: QFP100 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS61LPS25618EC-200TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100 Type of integrated circuit: SRAM memory Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Kind of memory: SRAM Operating temperature: -40...85°C Access time: 3.1ns Operating voltage: 3.3V Memory organisation: 256kx18bit Memory: 4.5Mb SRAM Case: QFP100 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS64LF12832EC-7.5TQLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel Type of integrated circuit: SRAM memory Kind of package: in-tray; tube Kind of memory: SRAM Kind of interface: parallel Case: QFP100 Mounting: SMD Operating temperature: -40...125°C Access time: 7.5ns Operating voltage: 3.3V Memory: 4Mb SRAM Memory organisation: 128kx32bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
IS25WP016D-JKLE | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V Type of integrated circuit: FLASH memory Case: WSON8 Mounting: SMD Operating temperature: -40...105°C Dimensions: 6x5mm Operating voltage: 1.65...1.95V Memory: 16Mb FLASH Operating frequency: 133MHz Interface: DTR; QPI; SPI Kind of memory: NOR Kind of interface: serial |
на замовлення 101 шт: термін постачання 21-30 дні (днів) |
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IS25WP080D-JKLE | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; WSON8 Type of integrated circuit: FLASH memory Case: WSON8 Mounting: SMD Operating temperature: -40...105°C Dimensions: 6x5mm Operating voltage: 1.65...1.95V Memory: 8Mb FLASH Operating frequency: 133MHz Interface: DTR; QPI; SPI Kind of memory: NOR Kind of interface: serial |
на замовлення 69 шт: термін постачання 21-30 дні (днів) |
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| IS34ML02G081-TLI | ISSI |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel Mounting: SMD Kind of package: in-tray; tube Kind of interface: parallel Case: TSOP48 Operating temperature: -40...85°C Operating voltage: 2.7...3.6V Memory: 2Gb FLASH Kind of memory: NAND Interface: parallel 8bit Type of integrated circuit: FLASH memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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IS34ML01G081-BLI | ISSI |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; VFBGA63; parallel Type of integrated circuit: FLASH memory Kind of memory: NAND Memory: 1Gb FLASH Operating voltage: 2.7...3.6V Mounting: SMD Operating temperature: -40...85°C Case: VFBGA63 Kind of interface: parallel Interface: parallel 8bit |
на замовлення 397 шт: термін постачання 21-30 дні (днів) |
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IS34ML01G084-BLI | ISSI |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; VFBGA63; parallel Type of integrated circuit: FLASH memory Kind of memory: NAND Memory: 1Gb FLASH Operating voltage: 2.7...3.6V Mounting: SMD Operating temperature: -40...85°C Case: VFBGA63 Kind of interface: parallel Interface: parallel 8bit |
на замовлення 220 шт: термін постачання 21-30 дні (днів) |
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| IS34MW01G164-BLI | ISSI |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; VFBGA63; parallel Type of integrated circuit: FLASH memory Kind of memory: NAND Memory: 1Gb FLASH Operating voltage: 1.7...1.95V Mounting: SMD Operating temperature: -40...85°C Case: VFBGA63 Kind of interface: parallel Interface: parallel 8bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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IS34ML02G084-TLI | ISSI |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NAND Memory: 2Gb FLASH Operating voltage: 2.7...3.6V Mounting: SMD Operating temperature: -40...85°C Case: TSOP48 Kind of interface: parallel Interface: parallel 8bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| IS43LR16400C-6BLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA60 Kind of package: in-tray; tube Kind of memory: LPDDR; SDRAM Kind of interface: parallel Mounting: SMD Case: TFBGA60 Memory organisation: 1Mx16bitx4 Operating temperature: -40...85°C Access time: 6ns Supply voltage: 1.7...1.95V DC Memory: 64Mb DRAM Clock frequency: 166MHz Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS43LR16640A-5BL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 1GbDRAM; 16Mx16bitx4; 200MHz; 5ns; TWBGA60; 0÷70°C Kind of package: in-tray; tube Case: TWBGA60 Kind of interface: parallel Operating temperature: 0...70°C Access time: 5ns Supply voltage: 1.7...1.95V DC Memory: 1Gb DRAM Memory organisation: 16Mx16bitx4 Clock frequency: 200MHz Kind of memory: LPDDR; SDRAM Type of integrated circuit: DRAM memory Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS43LR16640A-5BL-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 1GbDRAM; 16Mx16bitx4; 200MHz; 5ns; TWBGA60; 0÷70°C Kind of package: reel; tape Case: TWBGA60 Kind of interface: parallel Operating temperature: 0...70°C Access time: 5ns Supply voltage: 1.7...1.95V DC Memory: 1Gb DRAM Memory organisation: 16Mx16bitx4 Clock frequency: 200MHz Kind of memory: LPDDR; SDRAM Type of integrated circuit: DRAM memory Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS64LPS25636A-166TQLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; QFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 9Mb SRAM Memory organisation: 256kx36bit Operating voltage: 3.3V Access time: 3.5ns Case: QFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS61LPS25636A-200B3LI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; BGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 9Mb SRAM Memory organisation: 256kx36bit Operating voltage: 3.3V Access time: 3.5ns Case: BGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS61LPS25636A-200B3LI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; BGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 9Mb SRAM Memory organisation: 256kx36bit Operating voltage: 3.3V Access time: 3.5ns Case: BGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS61LPS25636A-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; QFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 9Mb SRAM Memory organisation: 256kx36bit Operating voltage: 3.3V Access time: 3.5ns Case: QFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS61LPS25636A-200TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; QFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 9Mb SRAM Memory organisation: 256kx36bit Operating voltage: 3.3V Access time: 3.5ns Case: QFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS43LD16128B-25BL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 18ns; TFBGA134 Type of integrated circuit: DRAM memory Case: TFBGA134 Kind of memory: LPDDR2; SDRAM Kind of package: in-tray; tube Kind of interface: parallel Operating temperature: 0...85°C Access time: 18ns Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Memory: 2Gb DRAM Mounting: SMD Clock frequency: 400MHz Memory organisation: 16Mx8bitx8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS43LD16128B-25BL-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 18ns; TFBGA134 Type of integrated circuit: DRAM memory Case: TFBGA134 Kind of memory: LPDDR2; SDRAM Kind of package: reel; tape Kind of interface: parallel Operating temperature: 0...85°C Access time: 18ns Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Memory: 2Gb DRAM Mounting: SMD Clock frequency: 400MHz Memory organisation: 16Mx8bitx8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS43LD16320A-25BLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 400MHz; 18ns; TFBGA134 Type of integrated circuit: DRAM memory Case: TFBGA134 Kind of memory: LPDDR2; SDRAM Kind of package: in-tray; tube Kind of interface: parallel Operating temperature: -40...85°C Access time: 18ns Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Memory: 512Mb DRAM Mounting: SMD Clock frequency: 400MHz Memory organisation: 8Mx16bitx4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS43LD16640C-18BLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 533MHz; 18ns; TFBGA134 Type of integrated circuit: DRAM memory Case: TFBGA134 Kind of memory: LPDDR2; SDRAM Kind of package: in-tray; tube Kind of interface: parallel Operating temperature: -40...85°C Access time: 18ns Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Memory: 1Gb DRAM Mounting: SMD Clock frequency: 533MHz Memory organisation: 8Mx16bitx8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS43LD16640C-25BLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 18ns; TFBGA134 Type of integrated circuit: DRAM memory Case: TFBGA134 Kind of memory: LPDDR2; SDRAM Kind of package: in-tray; tube Kind of interface: parallel Operating temperature: -40...85°C Access time: 18ns Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Memory: 1Gb DRAM Mounting: SMD Clock frequency: 400MHz Memory organisation: 8Mx16bitx8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS43LD16640C-25BLI-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 18ns; TFBGA134 Type of integrated circuit: DRAM memory Case: TFBGA134 Kind of memory: LPDDR2; SDRAM Kind of package: reel; tape Kind of interface: parallel Operating temperature: -40...85°C Access time: 18ns Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Memory: 1Gb DRAM Mounting: SMD Clock frequency: 400MHz Memory organisation: 8Mx16bitx8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS61QDB21M18A-250B4LI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 1.8V; LFBGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 18Mb SRAM Memory organisation: 1Mx18bit Operating voltage: 1.8V Case: LFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS61QDB24M18A-250B4LI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; 1.8V; LFBGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 4Mx18bit Operating voltage: 1.8V Case: LFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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IS62C1024AL-35TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 35ns; TSOP32; parallel Type of integrated circuit: SRAM memory Case: TSOP32 Mounting: SMD Kind of memory: SRAM Operating temperature: -40...85°C Kind of interface: parallel Access time: 35ns Operating voltage: 5V Memory: 1Mb SRAM Memory organisation: 128kx8bit |
на замовлення 18 шт: термін постачання 21-30 дні (днів) |
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| IS66WVH8M8BLL-100B1LI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 64MbSRAM; 8Mx8bit; 3V; 40ns; TFBGA24; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 64Mb SRAM Memory organisation: 8Mx8bit Operating voltage: 3V Case: TFBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 40ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS66WVH8M8BLL-100B1LI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 64MbSRAM; 8Mx8bit; 3V; 40ns; TFBGA24; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 64Mb SRAM Memory organisation: 8Mx8bit Operating voltage: 3V Case: TFBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Access time: 40ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS66WVH16M8DBLL-100B1LI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 128MbSRAM; 16Mx8bit; 2.7÷3.6V; TFBGA24; parallel Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 128Mb SRAM Memory organisation: 16Mx8bit Operating voltage: 2.7...3.6V Case: TFBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS61LPS51218A-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel Operating temperature: -40...85°C Case: QFP100 Mounting: SMD Kind of memory: SRAM Access time: 3.1ns Operating voltage: 3.3V Memory: 9Mb SRAM Kind of package: in-tray; tube Memory organisation: 512kx18bit Type of integrated circuit: SRAM memory Kind of interface: parallel |
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| IS61LPS51236B-200B3LI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165 Operating temperature: -40...85°C Case: TFBGA165 Mounting: SMD Kind of memory: SRAM Access time: 3ns Operating voltage: 3.3V Memory: 18Mb SRAM Kind of package: in-tray; tube Memory organisation: 512kx36bit Type of integrated circuit: SRAM memory Kind of interface: parallel |
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В кошику од. на суму грн. | |||||||||||||
| IS61LPS51236B-200B3LI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165 Operating temperature: -40...85°C Case: TFBGA165 Mounting: SMD Kind of memory: SRAM Access time: 3ns Operating voltage: 3.3V Memory: 18Mb SRAM Kind of package: reel; tape Memory organisation: 512kx36bit Type of integrated circuit: SRAM memory Kind of interface: parallel |
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В кошику од. на суму грн. | |||||||||||||
| IS61LPS51236B-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel Operating temperature: -40...85°C Case: QFP100 Mounting: SMD Kind of memory: SRAM Access time: 3ns Operating voltage: 3.3V Memory: 18Mb SRAM Kind of package: in-tray; tube Memory organisation: 512kx36bit Type of integrated circuit: SRAM memory Kind of interface: parallel |
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В кошику од. на суму грн. | |||||||||||||
| IS61LPS51236B-200TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel Operating temperature: -40...85°C Case: QFP100 Mounting: SMD Kind of memory: SRAM Access time: 3ns Operating voltage: 3.3V Memory: 18Mb SRAM Kind of package: reel; tape Memory organisation: 512kx36bit Type of integrated circuit: SRAM memory Kind of interface: parallel |
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В кошику од. на суму грн. | |||||||||||||
| IS61VPS51236B-200B3LI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 3ns; TFBGA165 Operating temperature: -40...85°C Case: TFBGA165 Mounting: SMD Kind of memory: SRAM Access time: 3ns Operating voltage: 2.5V Memory: 18Mb SRAM Kind of package: in-tray; tube Memory organisation: 512kx36bit Type of integrated circuit: SRAM memory Kind of interface: parallel |
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В кошику од. на суму грн. | |||||||||||||
| IS61VPS51236B-200TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 3ns; QFP100; parallel Operating temperature: -40...85°C Case: QFP100 Mounting: SMD Kind of memory: SRAM Access time: 3ns Operating voltage: 2.5V Memory: 18Mb SRAM Kind of package: reel; tape Memory organisation: 512kx36bit Type of integrated circuit: SRAM memory Kind of interface: parallel |
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В кошику од. на суму грн. | |||||||||||||
| IS61VPS51236B-250B3LI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 2.6ns; TFBGA165 Operating temperature: -40...85°C Case: TFBGA165 Mounting: SMD Kind of memory: SRAM Access time: 2.6ns Operating voltage: 2.5V Memory: 18Mb SRAM Kind of package: in-tray; tube Memory organisation: 512kx36bit Type of integrated circuit: SRAM memory Kind of interface: parallel |
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В кошику од. на суму грн. | |||||||||||||
|
IS61C1024AL-12TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; TSOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Operating voltage: 5V Access time: 12ns Case: TSOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
на замовлення 153 шт: термін постачання 21-30 дні (днів) |
|
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| IS61C1024AL-12HLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; STSOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Operating voltage: 5V Access time: 12ns Case: STSOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
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В кошику од. на суму грн. | |||||||||||||
| IS61C1024AL-12JLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Operating voltage: 5V Access time: 12ns Case: SOJ32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
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В кошику од. на суму грн. | |||||||||||||
|
IS61C1024AL-12TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; TSOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Operating voltage: 5V Access time: 12ns Case: TSOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
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В кошику од. на суму грн. | ||||||||||||
| IS66WV1M16EBLL-55BLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Operating voltage: 2.5...3.6V Case: TFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 55ns |
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В кошику од. на суму грн. | |||||||||||||
| IS66WV1M16EBLL-70BLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Operating voltage: 2.5...3.6V Case: TFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 70ns |
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В кошику од. на суму грн. | |||||||||||||
| IS66WVE1M16EBLL-70BLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Operating voltage: 2.7...3.6V Case: TFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 70ns |
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| IS66WVE2M16EALL-70BLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 32Mb SRAM Memory organisation: 2Mx16bit Operating voltage: 1.7...1.95V Case: TFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 70ns |
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В кошику од. на суму грн. |
| IS43DR86400E-3DBL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60
Operating temperature: 0...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 15ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 333MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60
Operating temperature: 0...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 15ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 333MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
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| IS43DR86400E-3DBLI |
![]() |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 15ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 333MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 15ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 333MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
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| IS43DR86400E-3DBLI-TR |
![]() |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 15ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 333MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 15ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 333MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
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| IS43DR86400E-25DBLI-TR |
![]() |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 12.5ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 400MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 12.5ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 400MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
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В кошику
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| IS34ML04G081-TLI |
![]() |
Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 4GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND
Memory: 4Gb FLASH
Operating voltage: 2.7...3.6V
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP48
Kind of interface: parallel
Interface: parallel 8bit
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 4GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND
Memory: 4Gb FLASH
Operating voltage: 2.7...3.6V
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP48
Kind of interface: parallel
Interface: parallel 8bit
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В кошику
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| IS42S16100H-7TLI-TR |
![]() |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP50 II
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3.3V DC
Memory: 16Mb DRAM
Clock frequency: 143MHz
Memory organisation: 512kx16bitx2
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP50 II
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3.3V DC
Memory: 16Mb DRAM
Clock frequency: 143MHz
Memory organisation: 512kx16bitx2
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| IS42S16100H-6BLI |
![]() |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TFBGA60
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 16Mb DRAM
Clock frequency: 166MHz
Memory organisation: 512kx16bitx2
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TFBGA60
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 16Mb DRAM
Clock frequency: 166MHz
Memory organisation: 512kx16bitx2
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| IS61WV20488BLL-10TLI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2048x8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2048x8bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2048x8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2048x8bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 131 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1714.00 грн |
| 2+ | 1505.08 грн |
| 100+ | 1447.67 грн |
| IS61WV102416EDBLL-10B2LI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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В кошику
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| IS64LF12832A-7.5TQLA3 |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel
Kind of package: in-tray; tube
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...125°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 4Mb SRAM
Memory organisation: 128kx32bit
Type of integrated circuit: SRAM memory
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel
Kind of package: in-tray; tube
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...125°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 4Mb SRAM
Memory organisation: 128kx32bit
Type of integrated circuit: SRAM memory
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В кошику
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| IS64LF12832A-7.5TQLA3-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel
Kind of package: reel; tape
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...125°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 4Mb SRAM
Memory organisation: 128kx32bit
Type of integrated circuit: SRAM memory
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel
Kind of package: reel; tape
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...125°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 4Mb SRAM
Memory organisation: 128kx32bit
Type of integrated circuit: SRAM memory
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| IS64LPS12832A-200TQLA3 |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 3.1ns; QFP100; parallel
Kind of package: in-tray; tube
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...125°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 4Mb SRAM
Memory organisation: 128kx32bit
Type of integrated circuit: SRAM memory
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 3.1ns; QFP100; parallel
Kind of package: in-tray; tube
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...125°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 4Mb SRAM
Memory organisation: 128kx32bit
Type of integrated circuit: SRAM memory
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| IS64LPS12832A-200TQLA3-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 3.1ns; QFP100; parallel
Kind of package: reel; tape
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...125°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 4Mb SRAM
Memory organisation: 128kx32bit
Type of integrated circuit: SRAM memory
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 3.1ns; QFP100; parallel
Kind of package: reel; tape
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...125°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 4Mb SRAM
Memory organisation: 128kx32bit
Type of integrated circuit: SRAM memory
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| IS61LPS25618A-200TQLI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100
Type of integrated circuit: SRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 256kx18bit
Memory: 4.5Mb SRAM
Case: QFP100
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100
Type of integrated circuit: SRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 256kx18bit
Memory: 4.5Mb SRAM
Case: QFP100
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| IS61LPS25618EC-200TQLI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100
Type of integrated circuit: SRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 256kx18bit
Memory: 4.5Mb SRAM
Case: QFP100
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100
Type of integrated circuit: SRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 256kx18bit
Memory: 4.5Mb SRAM
Case: QFP100
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| IS61LPS25618EC-200TQLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100
Type of integrated circuit: SRAM memory
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 256kx18bit
Memory: 4.5Mb SRAM
Case: QFP100
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100
Type of integrated circuit: SRAM memory
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 256kx18bit
Memory: 4.5Mb SRAM
Case: QFP100
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| IS64LF12832EC-7.5TQLA3 |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of package: in-tray; tube
Kind of memory: SRAM
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Operating temperature: -40...125°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 4Mb SRAM
Memory organisation: 128kx32bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of package: in-tray; tube
Kind of memory: SRAM
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Operating temperature: -40...125°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 4Mb SRAM
Memory organisation: 128kx32bit
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| IS25WP016D-JKLE |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Case: WSON8
Mounting: SMD
Operating temperature: -40...105°C
Dimensions: 6x5mm
Operating voltage: 1.65...1.95V
Memory: 16Mb FLASH
Operating frequency: 133MHz
Interface: DTR; QPI; SPI
Kind of memory: NOR
Kind of interface: serial
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Case: WSON8
Mounting: SMD
Operating temperature: -40...105°C
Dimensions: 6x5mm
Operating voltage: 1.65...1.95V
Memory: 16Mb FLASH
Operating frequency: 133MHz
Interface: DTR; QPI; SPI
Kind of memory: NOR
Kind of interface: serial
на замовлення 101 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 77.06 грн |
| 10+ | 65.27 грн |
| 16+ | 58.98 грн |
| 25+ | 57.40 грн |
| 43+ | 55.83 грн |
| 100+ | 54.26 грн |
| IS25WP080D-JKLE |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; WSON8
Type of integrated circuit: FLASH memory
Case: WSON8
Mounting: SMD
Operating temperature: -40...105°C
Dimensions: 6x5mm
Operating voltage: 1.65...1.95V
Memory: 8Mb FLASH
Operating frequency: 133MHz
Interface: DTR; QPI; SPI
Kind of memory: NOR
Kind of interface: serial
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; WSON8
Type of integrated circuit: FLASH memory
Case: WSON8
Mounting: SMD
Operating temperature: -40...105°C
Dimensions: 6x5mm
Operating voltage: 1.65...1.95V
Memory: 8Mb FLASH
Operating frequency: 133MHz
Interface: DTR; QPI; SPI
Kind of memory: NOR
Kind of interface: serial
на замовлення 69 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 73.13 грн |
| IS34ML02G081-TLI |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Mounting: SMD
Kind of package: in-tray; tube
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Kind of memory: NAND
Interface: parallel 8bit
Type of integrated circuit: FLASH memory
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Mounting: SMD
Kind of package: in-tray; tube
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Kind of memory: NAND
Interface: parallel 8bit
Type of integrated circuit: FLASH memory
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| IS34ML01G081-BLI |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; VFBGA63; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND
Memory: 1Gb FLASH
Operating voltage: 2.7...3.6V
Mounting: SMD
Operating temperature: -40...85°C
Case: VFBGA63
Kind of interface: parallel
Interface: parallel 8bit
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; VFBGA63; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND
Memory: 1Gb FLASH
Operating voltage: 2.7...3.6V
Mounting: SMD
Operating temperature: -40...85°C
Case: VFBGA63
Kind of interface: parallel
Interface: parallel 8bit
на замовлення 397 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 368.38 грн |
| 4+ | 283.09 грн |
| 9+ | 267.36 грн |
| 100+ | 257.14 грн |
| IS34ML01G084-BLI |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; VFBGA63; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND
Memory: 1Gb FLASH
Operating voltage: 2.7...3.6V
Mounting: SMD
Operating temperature: -40...85°C
Case: VFBGA63
Kind of interface: parallel
Interface: parallel 8bit
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; VFBGA63; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND
Memory: 1Gb FLASH
Operating voltage: 2.7...3.6V
Mounting: SMD
Operating temperature: -40...85°C
Case: VFBGA63
Kind of interface: parallel
Interface: parallel 8bit
на замовлення 220 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 243.04 грн |
| 10+ | 210.74 грн |
| 220+ | 206.81 грн |
| IS34MW01G164-BLI |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; VFBGA63; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND
Memory: 1Gb FLASH
Operating voltage: 1.7...1.95V
Mounting: SMD
Operating temperature: -40...85°C
Case: VFBGA63
Kind of interface: parallel
Interface: parallel 8bit
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; VFBGA63; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND
Memory: 1Gb FLASH
Operating voltage: 1.7...1.95V
Mounting: SMD
Operating temperature: -40...85°C
Case: VFBGA63
Kind of interface: parallel
Interface: parallel 8bit
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| IS34ML02G084-TLI |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND
Memory: 2Gb FLASH
Operating voltage: 2.7...3.6V
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP48
Kind of interface: parallel
Interface: parallel 8bit
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND
Memory: 2Gb FLASH
Operating voltage: 2.7...3.6V
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP48
Kind of interface: parallel
Interface: parallel 8bit
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| IS43LR16400C-6BLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA60
Kind of package: in-tray; tube
Kind of memory: LPDDR; SDRAM
Kind of interface: parallel
Mounting: SMD
Case: TFBGA60
Memory organisation: 1Mx16bitx4
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 1.7...1.95V DC
Memory: 64Mb DRAM
Clock frequency: 166MHz
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA60
Kind of package: in-tray; tube
Kind of memory: LPDDR; SDRAM
Kind of interface: parallel
Mounting: SMD
Case: TFBGA60
Memory organisation: 1Mx16bitx4
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 1.7...1.95V DC
Memory: 64Mb DRAM
Clock frequency: 166MHz
Type of integrated circuit: DRAM memory
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| IS43LR16640A-5BL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx16bitx4; 200MHz; 5ns; TWBGA60; 0÷70°C
Kind of package: in-tray; tube
Case: TWBGA60
Kind of interface: parallel
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 1.7...1.95V DC
Memory: 1Gb DRAM
Memory organisation: 16Mx16bitx4
Clock frequency: 200MHz
Kind of memory: LPDDR; SDRAM
Type of integrated circuit: DRAM memory
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx16bitx4; 200MHz; 5ns; TWBGA60; 0÷70°C
Kind of package: in-tray; tube
Case: TWBGA60
Kind of interface: parallel
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 1.7...1.95V DC
Memory: 1Gb DRAM
Memory organisation: 16Mx16bitx4
Clock frequency: 200MHz
Kind of memory: LPDDR; SDRAM
Type of integrated circuit: DRAM memory
Mounting: SMD
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| IS43LR16640A-5BL-TR |
![]() |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx16bitx4; 200MHz; 5ns; TWBGA60; 0÷70°C
Kind of package: reel; tape
Case: TWBGA60
Kind of interface: parallel
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 1.7...1.95V DC
Memory: 1Gb DRAM
Memory organisation: 16Mx16bitx4
Clock frequency: 200MHz
Kind of memory: LPDDR; SDRAM
Type of integrated circuit: DRAM memory
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx16bitx4; 200MHz; 5ns; TWBGA60; 0÷70°C
Kind of package: reel; tape
Case: TWBGA60
Kind of interface: parallel
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 1.7...1.95V DC
Memory: 1Gb DRAM
Memory organisation: 16Mx16bitx4
Clock frequency: 200MHz
Kind of memory: LPDDR; SDRAM
Type of integrated circuit: DRAM memory
Mounting: SMD
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| IS64LPS25636A-166TQLA3 |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 3.5ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 3.5ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
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| IS61LPS25636A-200B3LI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; BGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 3.5ns
Case: BGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; BGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 3.5ns
Case: BGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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| IS61LPS25636A-200B3LI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; BGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 3.5ns
Case: BGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; BGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 3.5ns
Case: BGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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| IS61LPS25636A-200TQLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 3.5ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 3.5ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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| IS61LPS25636A-200TQLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 3.5ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 3.5ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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| IS43LD16128B-25BL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Kind of memory: LPDDR2; SDRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Operating temperature: 0...85°C
Access time: 18ns
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Memory: 2Gb DRAM
Mounting: SMD
Clock frequency: 400MHz
Memory organisation: 16Mx8bitx8
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Kind of memory: LPDDR2; SDRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Operating temperature: 0...85°C
Access time: 18ns
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Memory: 2Gb DRAM
Mounting: SMD
Clock frequency: 400MHz
Memory organisation: 16Mx8bitx8
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| IS43LD16128B-25BL-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Kind of memory: LPDDR2; SDRAM
Kind of package: reel; tape
Kind of interface: parallel
Operating temperature: 0...85°C
Access time: 18ns
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Memory: 2Gb DRAM
Mounting: SMD
Clock frequency: 400MHz
Memory organisation: 16Mx8bitx8
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Kind of memory: LPDDR2; SDRAM
Kind of package: reel; tape
Kind of interface: parallel
Operating temperature: 0...85°C
Access time: 18ns
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Memory: 2Gb DRAM
Mounting: SMD
Clock frequency: 400MHz
Memory organisation: 16Mx8bitx8
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| IS43LD16320A-25BLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Kind of memory: LPDDR2; SDRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 18ns
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Memory: 512Mb DRAM
Mounting: SMD
Clock frequency: 400MHz
Memory organisation: 8Mx16bitx4
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Kind of memory: LPDDR2; SDRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 18ns
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Memory: 512Mb DRAM
Mounting: SMD
Clock frequency: 400MHz
Memory organisation: 8Mx16bitx4
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| IS43LD16640C-18BLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 533MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Kind of memory: LPDDR2; SDRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 18ns
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Memory: 1Gb DRAM
Mounting: SMD
Clock frequency: 533MHz
Memory organisation: 8Mx16bitx8
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 533MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Kind of memory: LPDDR2; SDRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 18ns
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Memory: 1Gb DRAM
Mounting: SMD
Clock frequency: 533MHz
Memory organisation: 8Mx16bitx8
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| IS43LD16640C-25BLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Kind of memory: LPDDR2; SDRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 18ns
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Memory: 1Gb DRAM
Mounting: SMD
Clock frequency: 400MHz
Memory organisation: 8Mx16bitx8
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Kind of memory: LPDDR2; SDRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 18ns
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Memory: 1Gb DRAM
Mounting: SMD
Clock frequency: 400MHz
Memory organisation: 8Mx16bitx8
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| IS43LD16640C-25BLI-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Kind of memory: LPDDR2; SDRAM
Kind of package: reel; tape
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 18ns
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Memory: 1Gb DRAM
Mounting: SMD
Clock frequency: 400MHz
Memory organisation: 8Mx16bitx8
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Kind of memory: LPDDR2; SDRAM
Kind of package: reel; tape
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 18ns
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Memory: 1Gb DRAM
Mounting: SMD
Clock frequency: 400MHz
Memory organisation: 8Mx16bitx8
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| IS61QDB21M18A-250B4LI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Operating voltage: 1.8V
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Operating voltage: 1.8V
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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| IS61QDB24M18A-250B4LI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 4Mx18bit
Operating voltage: 1.8V
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 4Mx18bit
Operating voltage: 1.8V
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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| IS62C1024AL-35TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 35ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Case: TSOP32
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Kind of interface: parallel
Access time: 35ns
Operating voltage: 5V
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 35ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Case: TSOP32
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Kind of interface: parallel
Access time: 35ns
Operating voltage: 5V
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
на замовлення 18 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 165.98 грн |
| IS66WVH8M8BLL-100B1LI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 8Mx8bit; 3V; 40ns; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 64Mb SRAM
Memory organisation: 8Mx8bit
Operating voltage: 3V
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 40ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 8Mx8bit; 3V; 40ns; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 64Mb SRAM
Memory organisation: 8Mx8bit
Operating voltage: 3V
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 40ns
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| IS66WVH8M8BLL-100B1LI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 8Mx8bit; 3V; 40ns; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 64Mb SRAM
Memory organisation: 8Mx8bit
Operating voltage: 3V
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 40ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 8Mx8bit; 3V; 40ns; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 64Mb SRAM
Memory organisation: 8Mx8bit
Operating voltage: 3V
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 40ns
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| IS66WVH16M8DBLL-100B1LI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128MbSRAM; 16Mx8bit; 2.7÷3.6V; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 128Mb SRAM
Memory organisation: 16Mx8bit
Operating voltage: 2.7...3.6V
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128MbSRAM; 16Mx8bit; 2.7÷3.6V; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 128Mb SRAM
Memory organisation: 16Mx8bit
Operating voltage: 2.7...3.6V
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
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| IS61LPS51218A-200TQLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Operating temperature: -40...85°C
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Kind of package: in-tray; tube
Memory organisation: 512kx18bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Operating temperature: -40...85°C
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Kind of package: in-tray; tube
Memory organisation: 512kx18bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
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| IS61LPS51236B-200B3LI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165
Operating temperature: -40...85°C
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Memory organisation: 512kx36bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165
Operating temperature: -40...85°C
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Memory organisation: 512kx36bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
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| IS61LPS51236B-200B3LI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165
Operating temperature: -40...85°C
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Kind of package: reel; tape
Memory organisation: 512kx36bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165
Operating temperature: -40...85°C
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Kind of package: reel; tape
Memory organisation: 512kx36bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
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| IS61LPS51236B-200TQLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel
Operating temperature: -40...85°C
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Memory organisation: 512kx36bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel
Operating temperature: -40...85°C
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Memory organisation: 512kx36bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
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| IS61LPS51236B-200TQLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel
Operating temperature: -40...85°C
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Kind of package: reel; tape
Memory organisation: 512kx36bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel
Operating temperature: -40...85°C
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Kind of package: reel; tape
Memory organisation: 512kx36bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
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| IS61VPS51236B-200B3LI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 3ns; TFBGA165
Operating temperature: -40...85°C
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 2.5V
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Memory organisation: 512kx36bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 3ns; TFBGA165
Operating temperature: -40...85°C
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 2.5V
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Memory organisation: 512kx36bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
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| IS61VPS51236B-200TQLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 3ns; QFP100; parallel
Operating temperature: -40...85°C
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 2.5V
Memory: 18Mb SRAM
Kind of package: reel; tape
Memory organisation: 512kx36bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 3ns; QFP100; parallel
Operating temperature: -40...85°C
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 2.5V
Memory: 18Mb SRAM
Kind of package: reel; tape
Memory organisation: 512kx36bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
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| IS61VPS51236B-250B3LI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 2.6ns; TFBGA165
Operating temperature: -40...85°C
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Access time: 2.6ns
Operating voltage: 2.5V
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Memory organisation: 512kx36bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 2.6ns; TFBGA165
Operating temperature: -40...85°C
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Access time: 2.6ns
Operating voltage: 2.5V
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Memory organisation: 512kx36bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
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| IS61C1024AL-12TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 12ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 12ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 153 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 165.98 грн |
| 25+ | 149.41 грн |
| IS61C1024AL-12HLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; STSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 12ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; STSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 12ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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| IS61C1024AL-12JLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 12ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 12ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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| IS61C1024AL-12TLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 12ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 12ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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| IS66WV1M16EBLL-55BLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.5...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.5...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 55ns
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| IS66WV1M16EBLL-70BLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.5...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 70ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.5...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 70ns
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| IS66WVE1M16EBLL-70BLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.7...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 70ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.7...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 70ns
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од. на суму грн.
| IS66WVE2M16EALL-70BLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 1.7...1.95V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 70ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 1.7...1.95V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 70ns
товару немає в наявності
В кошику
од. на суму грн.








