| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IS61WV51216EDBLL-8TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 8ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.4...3.6V Access time: 8ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
на замовлення 45 шт: термін постачання 21-30 дні (днів) |
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IS25LP016D-JNLE | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 16Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Operating voltage: 2.3...3.6V Case: SO8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C |
на замовлення 864 шт: термін постачання 21-30 дні (днів) |
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| IS34MW04G084-TLI | ISSI |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 4GbFLASH; parallel 8bit; TSOP48; parallel Operating voltage: 1.7...1.95V Memory: 4Gb FLASH Type of integrated circuit: FLASH memory Kind of memory: NAND Kind of interface: parallel Interface: parallel 8bit Mounting: SMD Case: TSOP48 Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS61LV5128AL-10KLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 3.3V; 10ns; SOJ36; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Operating voltage: 3.3V Access time: 10ns Case: SOJ36 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS61LV5128AL-10TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 3.3V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Operating voltage: 3.3V Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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IS25LP064A-JBLE | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 64MbFLASH; QPI,SPI; 133MHz; 2.3÷3.6V; SO8; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: QPI; SPI Operating frequency: 133MHz Operating voltage: 2.3...3.6V Case: SO8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C |
на замовлення 338 шт: термін постачання 21-30 дні (днів) |
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IS25WQ040-JNLE | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 4MbFLASH; SPI; 104MHz; 1.65÷1.95V; SOP8; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 4Mb FLASH Interface: SPI Operating frequency: 104MHz Operating voltage: 1.65...1.95V Case: SOP8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C |
на замовлення 40 шт: термін постачання 21-30 дні (днів) |
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IS62C1024AL-35QLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 35ns; SOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 35ns Case: SOP32 Kind of interface: parallel Mounting: SMD Operating voltage: 4.5...5.5V |
на замовлення 52 шт: термін постачання 21-30 дні (днів) |
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| IS25LP256E-RMLE | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; SO16 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Operating voltage: 2.3...3.6V Case: SO16 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray; tube Operating frequency: 166MHz Interface: DTR; QPI; SPI |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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IS25LP256E-JLLA3 | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Operating voltage: 2.3...3.6V Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating frequency: 166MHz Interface: DTR; QPI; SPI |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IS25LP256E-JLLA3-TR | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Operating voltage: 2.3...3.6V Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Operating frequency: 166MHz Interface: DTR; QPI; SPI |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IS25LP256E-JLLE | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Operating voltage: 2.3...3.6V Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray; tube Operating frequency: 166MHz Interface: DTR; QPI; SPI |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IS25LP256E-JLLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Operating voltage: 2.3...3.6V Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Operating frequency: 166MHz Interface: DTR; QPI; SPI |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| IS25LP256E-RHLA3 | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Operating voltage: 2.3...3.6V Case: TFBGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating frequency: 166MHz Interface: DTR; QPI; SPI |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS25LP256E-RHLA3-TR | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Operating voltage: 2.3...3.6V Case: TFBGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Operating frequency: 166MHz Interface: DTR; QPI; SPI |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS25LP256E-RHLE | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Operating voltage: 2.3...3.6V Case: TFBGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray; tube Operating frequency: 166MHz Interface: DTR; QPI; SPI |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS25LP256E-RHLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Operating voltage: 2.3...3.6V Case: TFBGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Operating frequency: 166MHz Interface: DTR; QPI; SPI |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS25LP256E-RMLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; SO16 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Operating voltage: 2.3...3.6V Case: SO16 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Operating frequency: 166MHz Interface: DTR; QPI; SPI |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS25WE256E-RHLA3 | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.7÷1.95V Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Operating voltage: 1.7...1.95V Case: TFBGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating frequency: 166MHz Interface: DTR; QPI; SPI |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS25WE256E-RHLA3-TR | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.7÷1.95V Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Operating voltage: 1.7...1.95V Case: TFBGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Operating frequency: 166MHz Interface: DTR; QPI; SPI |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
|
IS25WP256E-JLLE | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Operating voltage: 1.65...1.95V Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray; tube Operating frequency: 166MHz Interface: DTR; QPI; SPI |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
|
IS25WP256E-JLLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Operating voltage: 1.65...1.95V Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Operating frequency: 166MHz Interface: DTR; QPI; SPI |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| IS25WP256E-RHLA3-TR | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Operating voltage: 1.65...1.95V Case: TFBGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Operating frequency: 166MHz Interface: DTR; QPI; SPI |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS25WP256E-RHLE | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Operating voltage: 1.65...1.95V Case: TFBGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray; tube Operating frequency: 166MHz Interface: DTR; QPI; SPI |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
|
IS61C5128AS-25QLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 25ns; SOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Operating voltage: 5V Case: SOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Access time: 25ns Memory organisation: 512kx8bit |
на замовлення 38 шт: термін постачання 21-30 дні (днів) |
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IS25LP032D-JNLE | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SOP8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 32Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Operating voltage: 2.3...3.6V Case: SOP8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
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| IS61WV51216EDBLL-10BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
|
IS42S16100H-7TLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II Type of integrated circuit: DRAM memory Mounting: SMD Kind of package: tube Kind of interface: parallel Kind of memory: SDRAM Case: TSOP50 II Operating temperature: -40...85°C Access time: 7ns Supply voltage: 3.3V DC Memory: 16Mb DRAM Clock frequency: 143MHz Memory organisation: 512kx16bitx2 |
на замовлення 209 шт: термін постачання 21-30 дні (днів) |
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IS42S16800F-6TLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Mounting: SMD Kind of package: in-tray; tube Kind of interface: parallel Kind of memory: SDRAM Case: TSOP54 II Operating temperature: -40...85°C Access time: 6ns Supply voltage: 3...3.6V DC Memory: 128Mb DRAM Clock frequency: 166MHz Memory organisation: 2Mx16bitx4 |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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| IS25WP080D-JULE-TR | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; USON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 8Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Operating voltage: 1.65...1.95V Case: USON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS62WV5128BLL-55QLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; SOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Operating voltage: 2.5...3.6V Access time: 55ns Case: SOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS64WV51216EDBLL-10CTLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS62WV1288BLL-55QLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷3.6V; 55ns; SOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Operating voltage: 2.5...3.6V Access time: 55ns Case: SOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS25LP016D-JULE-TR | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; USON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 16Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Operating voltage: 2.3...3.6V Case: USON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS25LP080D-JULE-TR | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; USON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 8Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Operating voltage: 2.3...3.6V Case: USON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS25WP016D-JULE-TR | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 16Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Operating voltage: 1.65...1.95V Case: USON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
|
IS25LQ512B-JKLE | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 512kbFLASH; SPI; 104MHz; 2.3÷3.6V; WSON8; serial Type of integrated circuit: FLASH memory Case: WSON8 Mounting: SMD Operating temperature: -40...105°C Dimensions: 6x5mm Operating voltage: 2.3...3.6V Memory: 512kb FLASH Operating frequency: 104MHz Interface: SPI Kind of memory: NOR Kind of interface: serial |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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IS66WVS1M8BLL-104NLI | ISSI |
Category: Serial SRAM memories - integrated circ.Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 3V; SO8; -40÷85°C; serial Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 1Mx8bit Operating voltage: 3V Case: SO8 Mounting: SMD Operating temperature: -40...85°C Kind of interface: serial Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| IS42SM32800K-6BLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90 Operating temperature: -40...85°C Memory: 256Mb DRAM Type of integrated circuit: DRAM memory Kind of package: in-tray; tube Kind of interface: parallel Kind of memory: SDRAM Mounting: SMD Case: TFBGA90 Access time: 6ns Supply voltage: 2.7...3.6V DC Clock frequency: 166MHz Memory organisation: 2Mx32bitx4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS42SM32800K-75BLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TFBGA90 Operating temperature: -40...85°C Memory: 256Mb DRAM Type of integrated circuit: DRAM memory Kind of package: in-tray; tube Kind of interface: parallel Kind of memory: SDRAM Mounting: SMD Case: TFBGA90 Access time: 7.5ns Supply voltage: 2.7...3.6V DC Clock frequency: 133MHz Memory organisation: 2Mx32bitx4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS42SM32800K-75BLI-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TFBGA90 Operating temperature: -40...85°C Memory: 256Mb DRAM Type of integrated circuit: DRAM memory Kind of package: reel; tape Kind of interface: parallel Kind of memory: SDRAM Mounting: SMD Case: TFBGA90 Access time: 7.5ns Supply voltage: 2.7...3.6V DC Clock frequency: 133MHz Memory organisation: 2Mx32bitx4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS42VM32800K-6BLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90 Operating temperature: -40...85°C Memory: 256Mb DRAM Type of integrated circuit: DRAM memory Kind of package: in-tray; tube Kind of interface: parallel Kind of memory: SDRAM Mounting: SMD Case: TFBGA90 Access time: 6ns Supply voltage: 1.7...1.95V DC Clock frequency: 166MHz Memory organisation: 2Mx32bitx4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS42VM32800K-75BLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TFBGA90 Operating temperature: -40...85°C Memory: 256Mb DRAM Type of integrated circuit: DRAM memory Kind of package: in-tray; tube Kind of interface: parallel Kind of memory: SDRAM Mounting: SMD Case: TFBGA90 Access time: 7.5ns Supply voltage: 1.7...1.95V DC Clock frequency: 133MHz Memory organisation: 2Mx32bitx4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS61C5128AS-25QLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 25ns; SOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Operating voltage: 5V Case: SOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Access time: 25ns Memory organisation: 512kx8bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS65C1024AL-45QLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 45ns; SOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Operating voltage: 5V Access time: 45ns Case: SOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS65C1024AL-45QLA3-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 45ns; SOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Operating voltage: 5V Access time: 45ns Case: SOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS62WV5128BLL-55QLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; SOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Operating voltage: 2.5...3.6V Access time: 55ns Case: SOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS62WV5128EBLL-45QLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.2÷3.6V; 45ns; SOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Operating voltage: 2.2...3.6V Access time: 45ns Case: SOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
|
IS42S16400J-7TLI-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 143MHz; 7ns; TSOP54 II; 3.3VDC Type of integrated circuit: DRAM memory Mounting: SMD Kind of package: reel; tape Kind of interface: parallel Kind of memory: SDRAM Case: TSOP54 II Operating temperature: -40...85°C Access time: 7ns Supply voltage: 3.3V DC Memory: 64Mb DRAM Clock frequency: 143MHz Memory organisation: 4Mx16bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| IS43R86400F-5TL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II Operating temperature: 0...70°C Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TSOP66 II Access time: 5ns Supply voltage: 2.5V DC Clock frequency: 200MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS42S86400F-6TL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II Operating temperature: 0...70°C Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TSOP54 II Access time: 6ns Supply voltage: 3...3.6V DC Clock frequency: 167MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS42S86400F-6TLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TSOP54 II Access time: 6ns Supply voltage: 3...3.6V DC Clock frequency: 167MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS42S86400F-6TLI-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TSOP54 II Access time: 6ns Supply voltage: 3...3.6V DC Clock frequency: 167MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS42S86400F-7TL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II Operating temperature: 0...70°C Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TSOP54 II Access time: 7ns Supply voltage: 3...3.6V DC Clock frequency: 143MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS42S86400F-7TLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TSOP54 II Access time: 7ns Supply voltage: 3...3.6V DC Clock frequency: 143MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS42S86400F-7TLI-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TSOP54 II Access time: 7ns Supply voltage: 3...3.6V DC Clock frequency: 143MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS43R86400F-5BLI-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TWBGA60 Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TWBGA60 Access time: 5ns Supply voltage: 2.5V DC Clock frequency: 200MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS43R86400F-5TLI-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TSOP66 II Access time: 5ns Supply voltage: 2.5V DC Clock frequency: 200MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS43DR86400E-25DBL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60 Operating temperature: 0...85°C Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TWBGA60 Access time: 12.5ns Supply voltage: 1.7...1.9V DC Clock frequency: 400MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: DDR2; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS43DR86400E-25DBLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60 Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TWBGA60 Access time: 12.5ns Supply voltage: 1.7...1.9V DC Clock frequency: 400MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: DDR2; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. |
| IS61WV51216EDBLL-8TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 8ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 8ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 8ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 8ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 45 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 923.05 грн |
| IS25LP016D-JNLE |
![]() |
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.3...3.6V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.3...3.6V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
на замовлення 864 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 44.88 грн |
| 100+ | 37.82 грн |
| IS34MW04G084-TLI |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 4GbFLASH; parallel 8bit; TSOP48; parallel
Operating voltage: 1.7...1.95V
Memory: 4Gb FLASH
Type of integrated circuit: FLASH memory
Kind of memory: NAND
Kind of interface: parallel
Interface: parallel 8bit
Mounting: SMD
Case: TSOP48
Operating temperature: -40...85°C
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 4GbFLASH; parallel 8bit; TSOP48; parallel
Operating voltage: 1.7...1.95V
Memory: 4Gb FLASH
Type of integrated circuit: FLASH memory
Kind of memory: NAND
Kind of interface: parallel
Interface: parallel 8bit
Mounting: SMD
Case: TSOP48
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| IS61LV5128AL-10KLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 3.3V; 10ns; SOJ36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 3.3V
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 3.3V; 10ns; SOJ36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 3.3V
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| IS61LV5128AL-10TLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 3.3V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 3.3V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 3.3V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 3.3V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| IS25LP064A-JBLE |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QPI,SPI; 133MHz; 2.3÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.3...3.6V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QPI,SPI; 133MHz; 2.3÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.3...3.6V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
на замовлення 338 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 114.32 грн |
| IS25WQ040-JNLE |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 4MbFLASH; SPI; 104MHz; 1.65÷1.95V; SOP8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 4Mb FLASH
Interface: SPI
Operating frequency: 104MHz
Operating voltage: 1.65...1.95V
Case: SOP8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 4MbFLASH; SPI; 104MHz; 1.65÷1.95V; SOP8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 4Mb FLASH
Interface: SPI
Operating frequency: 104MHz
Operating voltage: 1.65...1.95V
Case: SOP8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
на замовлення 40 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 38.37 грн |
| IS62C1024AL-35QLI | ![]() |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 35ns; SOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 35ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating voltage: 4.5...5.5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 35ns; SOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 35ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating voltage: 4.5...5.5V
на замовлення 52 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 320.11 грн |
| 3+ | 276.01 грн |
| 10+ | 247.70 грн |
| 25+ | 219.39 грн |
| IS25LP256E-RMLE |
![]() |
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; SO16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: SO16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; SO16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: SO16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
товару немає в наявності
В кошику
од. на суму грн.
| IS25LP256E-JLLA3 |
![]() |
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
товару немає в наявності
В кошику
од. на суму грн.
| IS25LP256E-JLLA3-TR |
![]() |
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
товару немає в наявності
В кошику
од. на суму грн.
| IS25LP256E-JLLE |
![]() |
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
товару немає в наявності
В кошику
од. на суму грн.
| IS25LP256E-JLLE-TR |
![]() |
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
товару немає в наявності
В кошику
од. на суму грн.
| IS25LP256E-RHLA3 |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
товару немає в наявності
В кошику
од. на суму грн.
| IS25LP256E-RHLA3-TR |
![]() |
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
товару немає в наявності
В кошику
од. на суму грн.
| IS25LP256E-RHLE |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
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| IS25LP256E-RHLE-TR |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
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| IS25LP256E-RMLE-TR |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; SO16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: SO16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; SO16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: SO16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
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| IS25WE256E-RHLA3 |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.7÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.7...1.95V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.7÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.7...1.95V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
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| IS25WE256E-RHLA3-TR |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.7÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.7...1.95V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.7÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.7...1.95V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
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| IS25WP256E-JLLE |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.65...1.95V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.65...1.95V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
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| IS25WP256E-JLLE-TR |
![]() |
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.65...1.95V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.65...1.95V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
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| IS25WP256E-RHLA3-TR |
![]() |
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.65...1.95V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.65...1.95V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
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| IS25WP256E-RHLE |
![]() |
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.65...1.95V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.65...1.95V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
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| IS61C5128AS-25QLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 25ns; SOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Operating voltage: 5V
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 25ns
Memory organisation: 512kx8bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 25ns; SOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Operating voltage: 5V
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 25ns
Memory organisation: 512kx8bit
на замовлення 38 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 577.54 грн |
| 3+ | 519.78 грн |
| 10+ | 511.13 грн |
| IS25LP032D-JNLE |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SOP8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.3...3.6V
Case: SOP8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SOP8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.3...3.6V
Case: SOP8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
на замовлення 22 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 68.59 грн |
| IS61WV51216EDBLL-10BLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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| IS42S16100H-7TLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP50 II
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3.3V DC
Memory: 16Mb DRAM
Clock frequency: 143MHz
Memory organisation: 512kx16bitx2
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP50 II
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3.3V DC
Memory: 16Mb DRAM
Clock frequency: 143MHz
Memory organisation: 512kx16bitx2
на замовлення 209 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 152.43 грн |
| IS42S16800F-6TLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Clock frequency: 166MHz
Memory organisation: 2Mx16bitx4
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Clock frequency: 166MHz
Memory organisation: 2Mx16bitx4
на замовлення 7 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 363.29 грн |
| 5+ | 322.40 грн |
| IS25WP080D-JULE-TR |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 1.65...1.95V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 1.65...1.95V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
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| IS62WV5128BLL-55QLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; SOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; SOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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| IS64WV51216EDBLL-10CTLA3 |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
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| IS62WV1288BLL-55QLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷3.6V; 55ns; SOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷3.6V; 55ns; SOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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| IS25LP016D-JULE-TR |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.3...3.6V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.3...3.6V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
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| IS25LP080D-JULE-TR |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.3...3.6V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.3...3.6V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
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| IS25WP016D-JULE-TR |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 1.65...1.95V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 1.65...1.95V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
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| IS25LQ512B-JKLE |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512kbFLASH; SPI; 104MHz; 2.3÷3.6V; WSON8; serial
Type of integrated circuit: FLASH memory
Case: WSON8
Mounting: SMD
Operating temperature: -40...105°C
Dimensions: 6x5mm
Operating voltage: 2.3...3.6V
Memory: 512kb FLASH
Operating frequency: 104MHz
Interface: SPI
Kind of memory: NOR
Kind of interface: serial
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512kbFLASH; SPI; 104MHz; 2.3÷3.6V; WSON8; serial
Type of integrated circuit: FLASH memory
Case: WSON8
Mounting: SMD
Operating temperature: -40...105°C
Dimensions: 6x5mm
Operating voltage: 2.3...3.6V
Memory: 512kb FLASH
Operating frequency: 104MHz
Interface: SPI
Kind of memory: NOR
Kind of interface: serial
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 54.26 грн |
| IS66WVS1M8BLL-104NLI |
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Виробник: ISSI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 3V; SO8; -40÷85°C; serial
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Operating voltage: 3V
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Kind of package: in-tray; tube
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 3V; SO8; -40÷85°C; serial
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Operating voltage: 3V
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Kind of package: in-tray; tube
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| IS42SM32800K-6BLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TFBGA90
Access time: 6ns
Supply voltage: 2.7...3.6V DC
Clock frequency: 166MHz
Memory organisation: 2Mx32bitx4
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TFBGA90
Access time: 6ns
Supply voltage: 2.7...3.6V DC
Clock frequency: 166MHz
Memory organisation: 2Mx32bitx4
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| IS42SM32800K-75BLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TFBGA90
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TFBGA90
Access time: 7.5ns
Supply voltage: 2.7...3.6V DC
Clock frequency: 133MHz
Memory organisation: 2Mx32bitx4
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TFBGA90
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TFBGA90
Access time: 7.5ns
Supply voltage: 2.7...3.6V DC
Clock frequency: 133MHz
Memory organisation: 2Mx32bitx4
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| IS42SM32800K-75BLI-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TFBGA90
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Type of integrated circuit: DRAM memory
Kind of package: reel; tape
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TFBGA90
Access time: 7.5ns
Supply voltage: 2.7...3.6V DC
Clock frequency: 133MHz
Memory organisation: 2Mx32bitx4
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TFBGA90
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Type of integrated circuit: DRAM memory
Kind of package: reel; tape
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TFBGA90
Access time: 7.5ns
Supply voltage: 2.7...3.6V DC
Clock frequency: 133MHz
Memory organisation: 2Mx32bitx4
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| IS42VM32800K-6BLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TFBGA90
Access time: 6ns
Supply voltage: 1.7...1.95V DC
Clock frequency: 166MHz
Memory organisation: 2Mx32bitx4
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TFBGA90
Access time: 6ns
Supply voltage: 1.7...1.95V DC
Clock frequency: 166MHz
Memory organisation: 2Mx32bitx4
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| IS42VM32800K-75BLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TFBGA90
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TFBGA90
Access time: 7.5ns
Supply voltage: 1.7...1.95V DC
Clock frequency: 133MHz
Memory organisation: 2Mx32bitx4
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TFBGA90
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TFBGA90
Access time: 7.5ns
Supply voltage: 1.7...1.95V DC
Clock frequency: 133MHz
Memory organisation: 2Mx32bitx4
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| IS61C5128AS-25QLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 25ns; SOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Operating voltage: 5V
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 25ns
Memory organisation: 512kx8bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 25ns; SOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Operating voltage: 5V
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 25ns
Memory organisation: 512kx8bit
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| IS65C1024AL-45QLA3 |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 45ns; SOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 45ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 45ns; SOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 45ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
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| IS65C1024AL-45QLA3-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 45ns; SOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 45ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 45ns; SOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 45ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
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| IS62WV5128BLL-55QLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; SOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; SOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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| IS62WV5128EBLL-45QLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.2÷3.6V; 45ns; SOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.2...3.6V
Access time: 45ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.2÷3.6V; 45ns; SOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.2...3.6V
Access time: 45ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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| IS42S16400J-7TLI-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 143MHz; 7ns; TSOP54 II; 3.3VDC
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3.3V DC
Memory: 64Mb DRAM
Clock frequency: 143MHz
Memory organisation: 4Mx16bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 143MHz; 7ns; TSOP54 II; 3.3VDC
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3.3V DC
Memory: 64Mb DRAM
Clock frequency: 143MHz
Memory organisation: 4Mx16bit
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| IS43R86400F-5TL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Access time: 5ns
Supply voltage: 2.5V DC
Clock frequency: 200MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Access time: 5ns
Supply voltage: 2.5V DC
Clock frequency: 200MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
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| IS42S86400F-6TL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 6ns
Supply voltage: 3...3.6V DC
Clock frequency: 167MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 6ns
Supply voltage: 3...3.6V DC
Clock frequency: 167MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
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| IS42S86400F-6TLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 6ns
Supply voltage: 3...3.6V DC
Clock frequency: 167MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 6ns
Supply voltage: 3...3.6V DC
Clock frequency: 167MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
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| IS42S86400F-6TLI-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 6ns
Supply voltage: 3...3.6V DC
Clock frequency: 167MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 6ns
Supply voltage: 3...3.6V DC
Clock frequency: 167MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
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| IS42S86400F-7TL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 7ns
Supply voltage: 3...3.6V DC
Clock frequency: 143MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 7ns
Supply voltage: 3...3.6V DC
Clock frequency: 143MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
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| IS42S86400F-7TLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 7ns
Supply voltage: 3...3.6V DC
Clock frequency: 143MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 7ns
Supply voltage: 3...3.6V DC
Clock frequency: 143MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
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| IS42S86400F-7TLI-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 7ns
Supply voltage: 3...3.6V DC
Clock frequency: 143MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 7ns
Supply voltage: 3...3.6V DC
Clock frequency: 143MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
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| IS43R86400F-5BLI-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TWBGA60
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 5ns
Supply voltage: 2.5V DC
Clock frequency: 200MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TWBGA60
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 5ns
Supply voltage: 2.5V DC
Clock frequency: 200MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
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| IS43R86400F-5TLI-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Access time: 5ns
Supply voltage: 2.5V DC
Clock frequency: 200MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Access time: 5ns
Supply voltage: 2.5V DC
Clock frequency: 200MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
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| IS43DR86400E-25DBL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60
Operating temperature: 0...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 12.5ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 400MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60
Operating temperature: 0...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 12.5ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 400MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
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| IS43DR86400E-25DBLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 12.5ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 400MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 12.5ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 400MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
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