| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| IS61NLP102418B-200B3LI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel Kind of interface: parallel Case: TFBGA165 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3ns Operating voltage: 3.3V Memory organisation: 1Mx18bit Memory: 18Mb SRAM Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS61NLP102418B-200B3LI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel Kind of interface: parallel Case: TFBGA165 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3ns Operating voltage: 3.3V Memory organisation: 1Mx18bit Memory: 18Mb SRAM Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS61NLP102418B-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; QFP100; parallel Kind of interface: parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3ns Operating voltage: 3.3V Memory organisation: 1Mx18bit Memory: 18Mb SRAM Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS61NLP102418B-200TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; QFP100; parallel Kind of interface: parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3ns Operating voltage: 3.3V Memory organisation: 1Mx18bit Memory: 18Mb SRAM Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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IS61NLP204818B-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 3.1ns; TQFP100; parallel Kind of interface: parallel Case: TQFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3.1ns Operating voltage: 3.3V Memory organisation: 2Mx18bit Memory: 36Mb SRAM Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IS61NVP204818B-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 2.5V; 3.1ns; TQFP100; parallel Kind of interface: parallel Case: TQFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3.1ns Operating voltage: 2.5V Memory organisation: 2Mx18bit Memory: 36Mb SRAM Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| IS61WV25616BLS-25TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 25ns; TSOP44 II Kind of interface: parallel Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Case: TSOP44 II Operating temperature: -40...85°C Access time: 25ns Operating voltage: 2.4...3.6V Memory organisation: 256kx16bit Memory: 4Mb SRAM |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS61WV25616BLS-25TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 25ns; TSOP44 II Kind of interface: parallel Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Case: TSOP44 II Operating temperature: -40...85°C Access time: 25ns Operating voltage: 2.4...3.6V Memory organisation: 256kx16bit Memory: 4Mb SRAM |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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IS62WV51216BLL-55TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 3.3V; 55ns; TSOP44; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 3.3V Access time: 55ns Case: TSOP44 Kind of interface: parallel Mounting: SMD |
на замовлення 2941 шт: термін постачання 21-30 дні (днів) |
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| IS61QDPB42M36A1-500M3LI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Operating voltage: 1.8V Case: LFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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IS42S16400J-5TL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 200MHz; 5ns; TSOP54 II; tube Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: tube Supply voltage: 3.3V DC |
на замовлення 49 шт: термін постачання 21-30 дні (днів) |
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IS42S16400J-6TL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 166MHz; 6ns; TSOP54 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 4Mx16bit Clock frequency: 166MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: tube Supply voltage: 3.3V DC |
на замовлення 66 шт: термін постачання 21-30 дні (днів) |
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IS42S16400J-6TLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 166MHz; 6ns; TSOP54 II; tube Type of integrated circuit: DRAM memory Mounting: SMD Kind of package: tube Part status: Not recommended for new designs Kind of interface: parallel Kind of memory: SDRAM Case: TSOP54 II Operating temperature: -40...85°C Access time: 6ns Supply voltage: 3.3V DC Memory: 64Mb DRAM Clock frequency: 166MHz Memory organisation: 4Mx16bit |
на замовлення 27 шт: термін постачання 21-30 дні (днів) |
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IS42S16400J-7TL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 143MHz; 7ns; TSOP54 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 4Mx16bit Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: tube Supply voltage: 3.3V DC |
на замовлення 440 шт: термін постачання 21-30 дні (днів) |
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IS42S32200L-6TL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TSOP86 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 512kx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP86 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: tube Supply voltage: 3.3V DC |
на замовлення 173 шт: термін постачання 21-30 дні (днів) |
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IS42S32200L-7TL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TSOP86 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 512kx32bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP86 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: tube Supply voltage: 3.3V DC |
на замовлення 283 шт: термін постачання 21-30 дні (днів) |
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IS42S32200L-7TLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TSOP86 II Type of integrated circuit: DRAM memory Mounting: SMD Kind of package: tube Kind of interface: parallel Kind of memory: SDRAM Case: TSOP86 II Operating temperature: -40...85°C Access time: 7ns Supply voltage: 3.3V DC Memory: 64Mb DRAM Clock frequency: 143MHz Memory organisation: 512kx32bitx4 |
на замовлення 51 шт: термін постачання 21-30 дні (днів) |
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IS42S32400F-6TL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 166MHz; 6ns; TSOP86 II; tube Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 4Mx32bit Clock frequency: 166MHz Access time: 6ns Case: TSOP86 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: tube Supply voltage: 3.3V DC |
на замовлення 31 шт: термін постачання 21-30 дні (днів) |
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| IS62WV51216ALL-70BLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 70ns; miniBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 1.65...2.2V Access time: 70ns Case: miniBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS62WV51216BLL-55BLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; miniBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.5...3.6V Access time: 55ns Case: miniBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS62WV51216EALL-55BLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 55ns; VFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 1.65...2.2V Access time: 55ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS62WV51216EBLL-45BLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; VFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.2...3.6V Access time: 45ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS62WV51216ALL-70BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 70ns; miniBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 1.65...2.2V Access time: 70ns Case: miniBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS62WV51216BLL-55BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; miniBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.5...3.6V Access time: 55ns Case: miniBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS62WV51216EBLL-45BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; VFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.2...3.6V Access time: 45ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS29GL256-70DLEB | ISSI |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 70ns Case: LFBGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS29GL256-70DLET | ISSI |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 70ns Case: LFBGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS29GL256-70FLEB | ISSI |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 70ns Case: LFBGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS29GL256-70FLET | ISSI |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 70ns Case: LFBGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS29GL256-70SLEB | ISSI |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; TSOP56; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 70ns Case: TSOP56 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS29GL256-70SLET | ISSI |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; TSOP56; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 70ns Case: TSOP56 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS29GL256-70DLEB-TR | ISSI |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 70ns Case: LFBGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS29GL256-70DLET-TR | ISSI |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 70ns Case: LFBGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS29GL256-70FLET-TR | ISSI |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 70ns Case: LFBGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS29GL256-70SLEB-TR | ISSI |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; TSOP56; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 70ns Case: TSOP56 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS29GL256-70SLET-TR | ISSI |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; TSOP56; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 70ns Case: TSOP56 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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IS62C256AL-45ULI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 45ns; SOP28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 256kb SRAM Memory organisation: 32kx8bit Access time: 45ns Case: SOP28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 5V |
на замовлення 164 шт: термін постачання 21-30 дні (днів) |
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| IS64WV51216BLL-10CTLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS64WV51216BLL-10CTLA3-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS64WV51216BLL-10MLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS64WV51216BLL-10MLA3-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS61WV51216BLL-10MLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS61WV51216BLL-10MLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS66WV51216EALL-70BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.7÷1.95V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 1.7...1.95V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS66WV51216EBLL-55TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.5...3.6V Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS66WV51216EBLL-55TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.5...3.6V Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS66WV51216EBLL-70BLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.5...3.6V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS66WV51216EBLL-70BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.5...3.6V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS66WV51216EBLL-70TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.5...3.6V Access time: 70ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS66WV51216EBLL-70TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.5...3.6V Access time: 70ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
IS34ML01G081-TLI | ISSI |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; TSOP48; parallel Interface: parallel 8bit Kind of memory: NAND Kind of interface: parallel Case: TSOP48 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V Memory: 1Gb FLASH Type of integrated circuit: FLASH memory |
на замовлення 85 шт: термін постачання 21-30 дні (днів) |
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IS34ML01G084-TLI | ISSI |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NAND Memory: 1Gb FLASH Interface: parallel 8bit Operating voltage: 2.7...3.6V Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
на замовлення 121 шт: термін постачання 21-30 дні (днів) |
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IS34ML04G084-TLI | ISSI |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 4GbFLASH; parallel 8bit; TSOP48; parallel Interface: parallel 8bit Kind of memory: NAND Kind of interface: parallel Case: TSOP48 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V Memory: 4Gb FLASH Type of integrated circuit: FLASH memory |
на замовлення 187 шт: термін постачання 21-30 дні (днів) |
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IS34MW02G084-TLI | ISSI |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel Interface: parallel 8bit Kind of memory: NAND Kind of interface: parallel Case: TSOP48 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.7...1.95V Memory: 2Gb FLASH Type of integrated circuit: FLASH memory |
на замовлення 69 шт: термін постачання 21-30 дні (днів) |
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| IS64WV51216EDBLL-10BLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS64WV51216EDBLL-10BLA3-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS61WV51216EDBLL-10BLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
IS61WV51216BLL-10TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
на замовлення 235 шт: термін постачання 21-30 дні (днів) |
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IS61LV5128AL-10TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 3.3V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Operating voltage: 3.3V Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
на замовлення 53 шт: термін постачання 21-30 дні (днів) |
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IS25LP128-JBLE | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 128MbFLASH; QPI,SPI; 133MHz; 2.3÷3.6V; SO8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 128Mb FLASH Interface: QPI; SPI Operating frequency: 133MHz Operating voltage: 2.3...3.6V Case: SO8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C |
на замовлення 394 шт: термін постачання 21-30 дні (днів) |
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| IS61NLP102418B-200B3LI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel
Kind of interface: parallel
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel
Kind of interface: parallel
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS61NLP102418B-200B3LI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel
Kind of interface: parallel
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel
Kind of interface: parallel
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| IS61NLP102418B-200TQLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS61NLP102418B-200TQLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| IS61NLP204818B-200TQLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 3.1ns; TQFP100; parallel
Kind of interface: parallel
Case: TQFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 2Mx18bit
Memory: 36Mb SRAM
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 3.1ns; TQFP100; parallel
Kind of interface: parallel
Case: TQFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 2Mx18bit
Memory: 36Mb SRAM
Kind of package: in-tray; tube
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В кошику
од. на суму грн.
| IS61NVP204818B-200TQLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 2.5V; 3.1ns; TQFP100; parallel
Kind of interface: parallel
Case: TQFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 2.5V
Memory organisation: 2Mx18bit
Memory: 36Mb SRAM
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 2.5V; 3.1ns; TQFP100; parallel
Kind of interface: parallel
Case: TQFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 2.5V
Memory organisation: 2Mx18bit
Memory: 36Mb SRAM
Kind of package: in-tray; tube
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В кошику
од. на суму грн.
| IS61WV25616BLS-25TLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 25ns; TSOP44 II
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 25ns
Operating voltage: 2.4...3.6V
Memory organisation: 256kx16bit
Memory: 4Mb SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 25ns; TSOP44 II
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 25ns
Operating voltage: 2.4...3.6V
Memory organisation: 256kx16bit
Memory: 4Mb SRAM
товару немає в наявності
В кошику
од. на суму грн.
| IS61WV25616BLS-25TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 25ns; TSOP44 II
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 25ns
Operating voltage: 2.4...3.6V
Memory organisation: 256kx16bit
Memory: 4Mb SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 25ns; TSOP44 II
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 25ns
Operating voltage: 2.4...3.6V
Memory organisation: 256kx16bit
Memory: 4Mb SRAM
товару немає в наявності
В кошику
од. на суму грн.
| IS62WV51216BLL-55TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 3.3V; 55ns; TSOP44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 3.3V
Access time: 55ns
Case: TSOP44
Kind of interface: parallel
Mounting: SMD
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 3.3V; 55ns; TSOP44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 3.3V
Access time: 55ns
Case: TSOP44
Kind of interface: parallel
Mounting: SMD
на замовлення 2941 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 467.46 грн |
| 3+ | 408.90 грн |
| 10+ | 389.24 грн |
| 25+ | 377.45 грн |
| 50+ | 371.16 грн |
| 135+ | 355.43 грн |
| IS61QDPB42M36A1-500M3LI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 1.8V
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 1.8V
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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В кошику
од. на суму грн.
| IS42S16400J-5TL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 200MHz; 5ns; TSOP54 II; tube
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 200MHz; 5ns; TSOP54 II; tube
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
на замовлення 49 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 291.31 грн |
| 5+ | 243.77 грн |
| 25+ | 202.88 грн |
| IS42S16400J-6TL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 166MHz; 6ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 166MHz; 6ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
на замовлення 66 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 229.49 грн |
| 5+ | 187.94 грн |
| 25+ | 166.71 грн |
| IS42S16400J-6TLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 166MHz; 6ns; TSOP54 II; tube
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: tube
Part status: Not recommended for new designs
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3.3V DC
Memory: 64Mb DRAM
Clock frequency: 166MHz
Memory organisation: 4Mx16bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 166MHz; 6ns; TSOP54 II; tube
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: tube
Part status: Not recommended for new designs
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3.3V DC
Memory: 64Mb DRAM
Clock frequency: 166MHz
Memory organisation: 4Mx16bit
на замовлення 27 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 170.64 грн |
| 10+ | 165.92 грн |
| IS42S16400J-7TL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 143MHz; 7ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 143MHz; 7ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
на замовлення 440 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 178.68 грн |
| 5+ | 160.42 грн |
| 25+ | 153.34 грн |
| 108+ | 148.62 грн |
| IS42S32200L-6TL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TSOP86 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 512kx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TSOP86 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 512kx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
на замовлення 173 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 335.35 грн |
| 3+ | 292.52 грн |
| 4+ | 259.50 грн |
| 10+ | 245.34 грн |
| 25+ | 235.91 грн |
| IS42S32200L-7TL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TSOP86 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 512kx32bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TSOP86 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 512kx32bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
на замовлення 283 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 340.43 грн |
| 4+ | 259.50 грн |
| 10+ | 245.34 грн |
| 108+ | 235.91 грн |
| IS42S32200L-7TLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TSOP86 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP86 II
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3.3V DC
Memory: 64Mb DRAM
Clock frequency: 143MHz
Memory organisation: 512kx32bitx4
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TSOP86 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP86 II
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3.3V DC
Memory: 64Mb DRAM
Clock frequency: 143MHz
Memory organisation: 512kx32bitx4
на замовлення 51 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 321.80 грн |
| IS42S32400F-6TL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 166MHz; 6ns; TSOP86 II; tube
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 166MHz; 6ns; TSOP86 II; tube
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
на замовлення 31 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 745.22 грн |
| 2+ | 500.91 грн |
| 6+ | 473.38 грн |
| IS62WV51216ALL-70BLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 70ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 1.65...2.2V
Access time: 70ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 70ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 1.65...2.2V
Access time: 70ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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| IS62WV51216BLL-55BLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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| IS62WV51216EALL-55BLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 55ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 1.65...2.2V
Access time: 55ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 55ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 1.65...2.2V
Access time: 55ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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| IS62WV51216EBLL-45BLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.2...3.6V
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.2...3.6V
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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| IS62WV51216ALL-70BLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 70ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 1.65...2.2V
Access time: 70ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 70ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 1.65...2.2V
Access time: 70ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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од. на суму грн.
| IS62WV51216BLL-55BLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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од. на суму грн.
| IS62WV51216EBLL-45BLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.2...3.6V
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.2...3.6V
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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од. на суму грн.
| IS29GL256-70DLEB |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
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од. на суму грн.
| IS29GL256-70DLET |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
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| IS29GL256-70FLEB |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
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| IS29GL256-70FLET |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
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| IS29GL256-70SLEB |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
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| IS29GL256-70SLET |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
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| IS29GL256-70DLEB-TR |
![]() |
Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
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| IS29GL256-70DLET-TR |
![]() |
Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
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| IS29GL256-70FLET-TR |
![]() |
Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
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| IS29GL256-70SLEB-TR |
![]() |
Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
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| IS29GL256-70SLET-TR |
![]() |
Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
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| IS62C256AL-45ULI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 45ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 45ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 45ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 45ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
на замовлення 164 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 109.24 грн |
| 5+ | 97.51 грн |
| 10+ | 91.22 грн |
| 50+ | 88.07 грн |
| 120+ | 87.28 грн |
| IS64WV51216BLL-10CTLA3 |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
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| IS64WV51216BLL-10CTLA3-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
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В кошику
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| IS64WV51216BLL-10MLA3 |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
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| IS64WV51216BLL-10MLA3-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
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В кошику
од. на суму грн.
| IS61WV51216BLL-10MLI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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В кошику
од. на суму грн.
| IS61WV51216BLL-10MLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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В кошику
од. на суму грн.
| IS66WV51216EALL-70BLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.7÷1.95V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 1.7...1.95V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.7÷1.95V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 1.7...1.95V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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В кошику
од. на суму грн.
| IS66WV51216EBLL-55TLI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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В кошику
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| IS66WV51216EBLL-55TLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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В кошику
од. на суму грн.
| IS66WV51216EBLL-70BLI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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В кошику
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| IS66WV51216EBLL-70BLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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В кошику
од. на суму грн.
| IS66WV51216EBLL-70TLI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 70ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 70ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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В кошику
од. на суму грн.
| IS66WV51216EBLL-70TLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 70ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 70ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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од. на суму грн.
| IS34ML01G081-TLI |
![]() |
Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; TSOP48; parallel
Interface: parallel 8bit
Kind of memory: NAND
Kind of interface: parallel
Case: TSOP48
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Type of integrated circuit: FLASH memory
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; TSOP48; parallel
Interface: parallel 8bit
Kind of memory: NAND
Kind of interface: parallel
Case: TSOP48
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Type of integrated circuit: FLASH memory
на замовлення 85 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 324.34 грн |
| 5+ | 287.80 грн |
| 25+ | 256.35 грн |
| IS34ML01G084-TLI |
![]() |
Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND
Memory: 1Gb FLASH
Interface: parallel 8bit
Operating voltage: 2.7...3.6V
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND
Memory: 1Gb FLASH
Interface: parallel 8bit
Operating voltage: 2.7...3.6V
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 121 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 209.17 грн |
| 10+ | 180.86 грн |
| 96+ | 169.07 грн |
| IS34ML04G084-TLI |
![]() |
Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 4GbFLASH; parallel 8bit; TSOP48; parallel
Interface: parallel 8bit
Kind of memory: NAND
Kind of interface: parallel
Case: TSOP48
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 4Gb FLASH
Type of integrated circuit: FLASH memory
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 4GbFLASH; parallel 8bit; TSOP48; parallel
Interface: parallel 8bit
Kind of memory: NAND
Kind of interface: parallel
Case: TSOP48
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 4Gb FLASH
Type of integrated circuit: FLASH memory
на замовлення 187 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 989.11 грн |
| 5+ | 817.80 грн |
| 25+ | 754.90 грн |
| 96+ | 703.00 грн |
| IS34MW02G084-TLI |
![]() |
Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Interface: parallel 8bit
Kind of memory: NAND
Kind of interface: parallel
Case: TSOP48
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7...1.95V
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Interface: parallel 8bit
Kind of memory: NAND
Kind of interface: parallel
Case: TSOP48
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7...1.95V
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
на замовлення 69 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 307.40 грн |
| IS64WV51216EDBLL-10BLA3 |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
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| IS64WV51216EDBLL-10BLA3-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
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од. на суму грн.
| IS61WV51216EDBLL-10BLI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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од. на суму грн.
| IS61WV51216BLL-10TLI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 235 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1443.01 грн |
| 3+ | 1270.74 грн |
| 10+ | 1176.38 грн |
| 25+ | 1048.21 грн |
| IS61LV5128AL-10TLI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 3.3V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 3.3V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 3.3V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 3.3V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 53 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 326.03 грн |
| IS25LP128-JBLE |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QPI,SPI; 133MHz; 2.3÷3.6V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.3...3.6V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QPI,SPI; 133MHz; 2.3÷3.6V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.3...3.6V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
на замовлення 394 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 195.62 грн |


















