| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IS22TF128G-BCLA2-TR | ISSI | IS22TF128G-BCLA2-TR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS22TF128G-JQLA1-TR | ISSI |
128GB, 100 Ball FBGA, 3.3V, RoHS, T&R, Auto Grade (-40+85C) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS22TF128G-JCLA2 | ISSI |
Managed NAND Flash Serial e-MMC 3.3V 1T-bit 128G x 8 Automotive 153-Pin VFBGA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
|
IS61VPS25672A-250B1L | ISSI |
SRAM Chip Sync Octal 2.5V 18M-bit 256K x 72-bit 2.6ns 209-Pin Mini-BGA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| IS61VPS102418B-200B3LI | ISSI |
IS61VPS102418B-200B3LI |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
|
IS43TR82560B-125KBLI | ISSI |
DRAM Chip DDR3 SDRAM 2Gbit 256Mx8 1.5V 78-Pin TW-BGA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
IS43TR82560BL-125KBLI | ISSI |
DRAM Chip DDR3L SDRAM 2Gbit 256Mx8 1.35V 78-Pin TW-BGA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
IS43TR82560BL-125KBL-TR | ISSI |
DRAM Chip DDR3L SDRAM 2Gbit 256Mx8 1.35V 78-Pin TW-BGA T/R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
IS43TR82560BL-125KBL | ISSI |
DRAM Chip DDR3L SDRAM 2Gbit 256Mx8 1.35V 78-Pin TW-BGA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
IS43TR82560B-125KBL-TR | ISSI |
DRAM Chip DDR3 SDRAM 2Gbit 256Mx8 1.5V 78-Pin TW-BGA T/R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
IS43TR82560BL-125KBLI-TR | ISSI |
256Mx8, 128Mx16 2Gb DDR3 SDRAM |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| IS25LE512M-RMLE-TY | ISSI | 512Mb QPI/QSPI, 16-pin SOP 300Mil, RoHS, dedicated reset pin, ECC, Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS27TH064G21-JCLI | ISSI |
64GB, 153 Ball FBGA, 3.3V, RoHS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS22TF64G-JCLA1 | ISSI |
64GB, Managed NAND Flash e-MMC Automotive AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
|
IS42S32800G-6BI-TR | ISSI |
DRAM Chip SDRAM 256Mbit 8Mx32 3.3V 90-Pin TFBGA T/R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| IS42S32200L-5TL-TR | ISSI |
DRAMChip SDRAM 64Mbit 2Mx32 3.3V 86-Pin TSOP-II T/R |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS42S32200N-6TLI-TR | ISSI |
64M, 3.3V, SDRAM, 2Mx32, 166Mhz, 86 pin TSOP II (400 mil) RoHS, IT, T&R |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS42S32400J-6TLI | ISSI |
DRAM Chip SDRAM 128Mbit 4Mx32 3.3V 86-Pin TSOP-II |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS42S32200N-7TLI-TR | ISSI |
64M, 3.3V, SDRAM, 2Mx32, 143Mhz, 86 pin TSOP II (400 mil) RoHS, IT, T&R |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS42S32400J-6BL-TR | ISSI |
128M, 3.3V, SDRAM, 4Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS, T&R |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
|
IS42S32400J-6BL | ISSI |
DRAMChip SDRAM 128Mbit 4Mx32 3.3V 90-Pin TFBGA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| IS42S16800J-6TLI-TR | ISSI |
128M, 3.3V, SDRAM, 8Mx16, 166Mhz, 54 pin TSOP II (400 mil) RoHS, IT, T&R |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS42S16400N-5BLI | ISSI |
Synchronous Dynamic Ram |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS42S16160L-7BLI | ISSI |
DRAM Chip SDRAM 256Mbit 16Mx16 3.3V 54-Pin TFBGA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS42S32800J-75ETL-TR | ISSI |
8M X 32 256Mb Synchronous DRAM |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS42S32800L-6TL | ISSI |
256M, 3.3V, SDRAM, 8Mx32, 166Mhz, 86 pin TSOP II RoHS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
|
IS42S32800J-6BI | ISSI |
8M X 32 256MB SYNCHRONOUS DRAM |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
IS42S32800J-6BI-TR | ISSI |
8M X 32 256MB Synchronous DRAM |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| IS42S16800J-7BL-TR | ISSI |
128M, 3.3V, SDRAM, 8Mx16, 143Mhz, 54 ball BGA (8mmx8mm) ROHS, T&R |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| 637008103A | ISSI | PPAP IS25LQ010B-JULA3-TR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
|
IS45S16400J-6BLA1 | ISSI |
DRAM Chip SDRAM 64Mbit 4Mx16 3.3V Automotive AEC-Q100 54-Pin TFBGA |
на замовлення 348 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
| IS43DR16640B-3DBLI | ISSI |
DRAM Chip DDR2 SDRAM 1Gbit 64Mx16 1.8V 84-Pin TW-BGA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
IS61LPS204836B-166TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 3.3V; 3.8ns; TQFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Operating voltage: 3.3V Access time: 3.8ns Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| IS61VPS204836B-250B3L | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 2.8ns; TFBGA165; 0÷70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Operating voltage: 2.5V Access time: 2.8ns Case: TFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS61VPS204836B-250B3LI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 2.8ns; TFBGA165 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Operating voltage: 2.5V Access time: 2.8ns Case: TFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS61VVPS204818B-166B3LI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 1.8V; 3.8ns; TFBGA165 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 36Mb SRAM Memory organisation: 2Mx18bit Operating voltage: 1.8V Access time: 3.8ns Case: TFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS61LPS51218B-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel Kind of interface: parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3.1ns Operating voltage: 3.3V Memory organisation: 512kx18bit Memory: 9Mb SRAM Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS61LPS51218B-200TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel Kind of interface: parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3.1ns Operating voltage: 3.3V Memory organisation: 512kx18bit Memory: 9Mb SRAM Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS61NLP51218B-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel Kind of interface: parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3.1ns Operating voltage: 3.3V Memory organisation: 512kx18bit Memory: 9Mb SRAM Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS61NLP51218B-200TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel Kind of interface: parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3.1ns Operating voltage: 3.3V Memory organisation: 512kx18bit Memory: 9Mb SRAM Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS61NLP102418B-200B3L | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel Kind of interface: parallel Case: TFBGA165 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: 0...70°C Access time: 3ns Operating voltage: 3.3V Memory organisation: 1Mx18bit Memory: 18Mb SRAM Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS61NLP102418B-200B3LI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel Kind of interface: parallel Case: TFBGA165 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3ns Operating voltage: 3.3V Memory organisation: 1Mx18bit Memory: 18Mb SRAM Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS61NLP102418B-200B3LI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel Kind of interface: parallel Case: TFBGA165 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3ns Operating voltage: 3.3V Memory organisation: 1Mx18bit Memory: 18Mb SRAM Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS61NLP102418B-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; QFP100; parallel Kind of interface: parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3ns Operating voltage: 3.3V Memory organisation: 1Mx18bit Memory: 18Mb SRAM Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS61NLP102418B-200TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; QFP100; parallel Kind of interface: parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3ns Operating voltage: 3.3V Memory organisation: 1Mx18bit Memory: 18Mb SRAM Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
IS61NLP204818B-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 3.1ns; TQFP100; parallel Kind of interface: parallel Case: TQFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3.1ns Operating voltage: 3.3V Memory organisation: 2Mx18bit Memory: 36Mb SRAM Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
IS61NVP204818B-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 2.5V; 3.1ns; TQFP100; parallel Kind of interface: parallel Case: TQFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3.1ns Operating voltage: 2.5V Memory organisation: 2Mx18bit Memory: 36Mb SRAM Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| IS61WV25616BLS-25TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 25ns; TSOP44 II Mounting: SMD Case: TSOP44 II Kind of interface: parallel Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 25ns Operating voltage: 2.4...3.6V Memory: 4Mb SRAM Memory organisation: 256kx16bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IS61WV25616BLS-25TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 25ns; TSOP44 II Mounting: SMD Case: TSOP44 II Kind of interface: parallel Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 25ns Operating voltage: 2.4...3.6V Memory: 4Mb SRAM Memory organisation: 256kx16bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
IS62WV51216BLL-55TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 3.3V; 55ns; TSOP44; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 55ns Case: TSOP44 Kind of interface: parallel Mounting: SMD Operating voltage: 3.3V |
на замовлення 2916 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
| IS61QDPB42M36A1-500M3LI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Operating voltage: 1.8V Case: LFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
IS42S16400J-5TL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 200MHz; 5ns; TSOP54 II; tube Clock frequency: 200MHz Memory: 64Mb DRAM Supply voltage: 3.3V DC Operating temperature: 0...70°C Kind of memory: SDRAM Type of integrated circuit: DRAM memory Case: TSOP54 II Kind of package: tube Memory organisation: 1Mx16bitx4 Kind of interface: parallel Mounting: SMD Access time: 5ns |
на замовлення 49 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
IS42S16400J-6TL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 166MHz; 6ns; TSOP54 II; 0÷70°C Clock frequency: 166MHz Memory: 64Mb DRAM Supply voltage: 3.3V DC Operating temperature: 0...70°C Kind of memory: SDRAM Type of integrated circuit: DRAM memory Case: TSOP54 II Kind of package: tube Memory organisation: 4Mx16bit Kind of interface: parallel Mounting: SMD Access time: 6ns |
на замовлення 66 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
IS42S16400J-6TLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 166MHz; 6ns; TSOP54 II; tube Clock frequency: 166MHz Memory: 64Mb DRAM Supply voltage: 3.3V DC Operating temperature: -40...85°C Part status: Not recommended for new designs Kind of memory: SDRAM Type of integrated circuit: DRAM memory Case: TSOP54 II Kind of package: tube Memory organisation: 4Mx16bit Kind of interface: parallel Mounting: SMD Access time: 6ns |
на замовлення 27 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
IS42S16400J-7TL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 143MHz; 7ns; TSOP54 II; 0÷70°C Clock frequency: 143MHz Memory: 64Mb DRAM Supply voltage: 3.3V DC Operating temperature: 0...70°C Kind of memory: SDRAM Type of integrated circuit: DRAM memory Case: TSOP54 II Kind of package: tube Memory organisation: 4Mx16bit Kind of interface: parallel Mounting: SMD Access time: 7ns |
на замовлення 430 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
IS42S32200L-6TL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TSOP86 II Clock frequency: 166MHz Memory: 64Mb DRAM Supply voltage: 3.3V DC Operating temperature: 0...70°C Kind of memory: SDRAM Type of integrated circuit: DRAM memory Case: TSOP86 II Kind of package: tube Memory organisation: 512kx32bitx4 Kind of interface: parallel Mounting: SMD Access time: 6ns |
на замовлення 173 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
IS42S32200L-7TL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TSOP86 II Clock frequency: 143MHz Memory: 64Mb DRAM Supply voltage: 3.3V DC Operating temperature: 0...70°C Kind of memory: SDRAM Type of integrated circuit: DRAM memory Case: TSOP86 II Kind of package: tube Memory organisation: 512kx32bitx4 Kind of interface: parallel Mounting: SMD Access time: 7ns |
на замовлення 283 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
IS42S32200L-7TLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TSOP86 II Clock frequency: 143MHz Memory: 64Mb DRAM Supply voltage: 3.3V DC Operating temperature: -40...85°C Kind of memory: SDRAM Type of integrated circuit: DRAM memory Case: TSOP86 II Kind of package: tube Memory organisation: 512kx32bitx4 Kind of interface: parallel Mounting: SMD Access time: 7ns |
на замовлення 51 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
IS42S32400F-6TL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 166MHz; 6ns; TSOP86 II; tube Clock frequency: 166MHz Memory: 128Mb DRAM Supply voltage: 3.3V DC Operating temperature: 0...70°C Kind of memory: SDRAM Type of integrated circuit: DRAM memory Case: TSOP86 II Kind of package: tube Memory organisation: 4Mx32bit Kind of interface: parallel Mounting: SMD Access time: 6ns |
на замовлення 31 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
| IS62WV51216ALL-70BLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 70ns; miniBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 1.65...2.2V Access time: 70ns Case: miniBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. |
| IS22TF128G-BCLA2-TR |
Виробник: ISSI
IS22TF128G-BCLA2-TR
IS22TF128G-BCLA2-TR
товару немає в наявності
В кошику
од. на суму грн.
| IS22TF128G-JQLA1-TR |
![]() |
Виробник: ISSI
128GB, 100 Ball FBGA, 3.3V, RoHS, T&R, Auto Grade (-40+85C)
128GB, 100 Ball FBGA, 3.3V, RoHS, T&R, Auto Grade (-40+85C)
товару немає в наявності
В кошику
од. на суму грн.
| IS22TF128G-JCLA2 |
![]() |
Виробник: ISSI
Managed NAND Flash Serial e-MMC 3.3V 1T-bit 128G x 8 Automotive 153-Pin VFBGA
Managed NAND Flash Serial e-MMC 3.3V 1T-bit 128G x 8 Automotive 153-Pin VFBGA
товару немає в наявності
В кошику
од. на суму грн.
| IS61VPS25672A-250B1L |
![]() |
Виробник: ISSI
SRAM Chip Sync Octal 2.5V 18M-bit 256K x 72-bit 2.6ns 209-Pin Mini-BGA
SRAM Chip Sync Octal 2.5V 18M-bit 256K x 72-bit 2.6ns 209-Pin Mini-BGA
товару немає в наявності
В кошику
од. на суму грн.
| IS61VPS102418B-200B3LI |
![]() |
Виробник: ISSI
IS61VPS102418B-200B3LI
IS61VPS102418B-200B3LI
товару немає в наявності
В кошику
од. на суму грн.
| IS43TR82560B-125KBLI |
![]() |
Виробник: ISSI
DRAM Chip DDR3 SDRAM 2Gbit 256Mx8 1.5V 78-Pin TW-BGA
DRAM Chip DDR3 SDRAM 2Gbit 256Mx8 1.5V 78-Pin TW-BGA
товару немає в наявності
В кошику
од. на суму грн.
| IS43TR82560BL-125KBLI |
![]() |
Виробник: ISSI
DRAM Chip DDR3L SDRAM 2Gbit 256Mx8 1.35V 78-Pin TW-BGA
DRAM Chip DDR3L SDRAM 2Gbit 256Mx8 1.35V 78-Pin TW-BGA
товару немає в наявності
В кошику
од. на суму грн.
| IS43TR82560BL-125KBL-TR |
![]() |
Виробник: ISSI
DRAM Chip DDR3L SDRAM 2Gbit 256Mx8 1.35V 78-Pin TW-BGA T/R
DRAM Chip DDR3L SDRAM 2Gbit 256Mx8 1.35V 78-Pin TW-BGA T/R
товару немає в наявності
В кошику
од. на суму грн.
| IS43TR82560BL-125KBL |
![]() |
Виробник: ISSI
DRAM Chip DDR3L SDRAM 2Gbit 256Mx8 1.35V 78-Pin TW-BGA
DRAM Chip DDR3L SDRAM 2Gbit 256Mx8 1.35V 78-Pin TW-BGA
товару немає в наявності
В кошику
од. на суму грн.
| IS43TR82560B-125KBL-TR |
![]() |
Виробник: ISSI
DRAM Chip DDR3 SDRAM 2Gbit 256Mx8 1.5V 78-Pin TW-BGA T/R
DRAM Chip DDR3 SDRAM 2Gbit 256Mx8 1.5V 78-Pin TW-BGA T/R
товару немає в наявності
В кошику
од. на суму грн.
| IS43TR82560BL-125KBLI-TR |
![]() |
Виробник: ISSI
256Mx8, 128Mx16 2Gb DDR3 SDRAM
256Mx8, 128Mx16 2Gb DDR3 SDRAM
товару немає в наявності
В кошику
од. на суму грн.
| IS25LE512M-RMLE-TY |
Виробник: ISSI
512Mb QPI/QSPI, 16-pin SOP 300Mil, RoHS, dedicated reset pin, ECC, Tray
512Mb QPI/QSPI, 16-pin SOP 300Mil, RoHS, dedicated reset pin, ECC, Tray
товару немає в наявності
В кошику
од. на суму грн.
| IS27TH064G21-JCLI |
![]() |
Виробник: ISSI
64GB, 153 Ball FBGA, 3.3V, RoHS
64GB, 153 Ball FBGA, 3.3V, RoHS
товару немає в наявності
В кошику
од. на суму грн.
| IS22TF64G-JCLA1 |
![]() |
Виробник: ISSI
64GB, Managed NAND Flash e-MMC Automotive AEC-Q100
64GB, Managed NAND Flash e-MMC Automotive AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| IS42S32800G-6BI-TR |
![]() |
Виробник: ISSI
DRAM Chip SDRAM 256Mbit 8Mx32 3.3V 90-Pin TFBGA T/R
DRAM Chip SDRAM 256Mbit 8Mx32 3.3V 90-Pin TFBGA T/R
товару немає в наявності
В кошику
од. на суму грн.
| IS42S32200L-5TL-TR |
![]() |
Виробник: ISSI
DRAMChip SDRAM 64Mbit 2Mx32 3.3V 86-Pin TSOP-II T/R
DRAMChip SDRAM 64Mbit 2Mx32 3.3V 86-Pin TSOP-II T/R
товару немає в наявності
В кошику
од. на суму грн.
| IS42S32200N-6TLI-TR |
![]() |
Виробник: ISSI
64M, 3.3V, SDRAM, 2Mx32, 166Mhz, 86 pin TSOP II (400 mil) RoHS, IT, T&R
64M, 3.3V, SDRAM, 2Mx32, 166Mhz, 86 pin TSOP II (400 mil) RoHS, IT, T&R
товару немає в наявності
В кошику
од. на суму грн.
| IS42S32400J-6TLI |
![]() |
Виробник: ISSI
DRAM Chip SDRAM 128Mbit 4Mx32 3.3V 86-Pin TSOP-II
DRAM Chip SDRAM 128Mbit 4Mx32 3.3V 86-Pin TSOP-II
товару немає в наявності
В кошику
од. на суму грн.
| IS42S32200N-7TLI-TR |
![]() |
Виробник: ISSI
64M, 3.3V, SDRAM, 2Mx32, 143Mhz, 86 pin TSOP II (400 mil) RoHS, IT, T&R
64M, 3.3V, SDRAM, 2Mx32, 143Mhz, 86 pin TSOP II (400 mil) RoHS, IT, T&R
товару немає в наявності
В кошику
од. на суму грн.
| IS42S32400J-6BL-TR |
![]() |
Виробник: ISSI
128M, 3.3V, SDRAM, 4Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS, T&R
128M, 3.3V, SDRAM, 4Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS, T&R
товару немає в наявності
В кошику
од. на суму грн.
| IS42S32400J-6BL |
![]() |
Виробник: ISSI
DRAMChip SDRAM 128Mbit 4Mx32 3.3V 90-Pin TFBGA
DRAMChip SDRAM 128Mbit 4Mx32 3.3V 90-Pin TFBGA
товару немає в наявності
В кошику
од. на суму грн.
| IS42S16800J-6TLI-TR |
![]() |
Виробник: ISSI
128M, 3.3V, SDRAM, 8Mx16, 166Mhz, 54 pin TSOP II (400 mil) RoHS, IT, T&R
128M, 3.3V, SDRAM, 8Mx16, 166Mhz, 54 pin TSOP II (400 mil) RoHS, IT, T&R
товару немає в наявності
В кошику
од. на суму грн.
| IS42S16400N-5BLI |
![]() |
Виробник: ISSI
Synchronous Dynamic Ram
Synchronous Dynamic Ram
товару немає в наявності
В кошику
од. на суму грн.
| IS42S16160L-7BLI |
![]() |
Виробник: ISSI
DRAM Chip SDRAM 256Mbit 16Mx16 3.3V 54-Pin TFBGA
DRAM Chip SDRAM 256Mbit 16Mx16 3.3V 54-Pin TFBGA
товару немає в наявності
В кошику
од. на суму грн.
| IS42S32800J-75ETL-TR |
![]() |
Виробник: ISSI
8M X 32 256Mb Synchronous DRAM
8M X 32 256Mb Synchronous DRAM
товару немає в наявності
В кошику
од. на суму грн.
| IS42S32800L-6TL |
![]() |
Виробник: ISSI
256M, 3.3V, SDRAM, 8Mx32, 166Mhz, 86 pin TSOP II RoHS
256M, 3.3V, SDRAM, 8Mx32, 166Mhz, 86 pin TSOP II RoHS
товару немає в наявності
В кошику
од. на суму грн.
| IS42S32800J-6BI |
![]() |
Виробник: ISSI
8M X 32 256MB SYNCHRONOUS DRAM
8M X 32 256MB SYNCHRONOUS DRAM
товару немає в наявності
В кошику
од. на суму грн.
| IS42S32800J-6BI-TR |
![]() |
Виробник: ISSI
8M X 32 256MB Synchronous DRAM
8M X 32 256MB Synchronous DRAM
товару немає в наявності
В кошику
од. на суму грн.
| IS42S16800J-7BL-TR |
![]() |
Виробник: ISSI
128M, 3.3V, SDRAM, 8Mx16, 143Mhz, 54 ball BGA (8mmx8mm) ROHS, T&R
128M, 3.3V, SDRAM, 8Mx16, 143Mhz, 54 ball BGA (8mmx8mm) ROHS, T&R
товару немає в наявності
В кошику
од. на суму грн.
| 637008103A |
Виробник: ISSI
PPAP IS25LQ010B-JULA3-TR
PPAP IS25LQ010B-JULA3-TR
товару немає в наявності
В кошику
од. на суму грн.
| IS45S16400J-6BLA1 |
![]() |
Виробник: ISSI
DRAM Chip SDRAM 64Mbit 4Mx16 3.3V Automotive AEC-Q100 54-Pin TFBGA
DRAM Chip SDRAM 64Mbit 4Mx16 3.3V Automotive AEC-Q100 54-Pin TFBGA
на замовлення 348 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| IS43DR16640B-3DBLI |
![]() |
Виробник: ISSI
DRAM Chip DDR2 SDRAM 1Gbit 64Mx16 1.8V 84-Pin TW-BGA
DRAM Chip DDR2 SDRAM 1Gbit 64Mx16 1.8V 84-Pin TW-BGA
товару немає в наявності
В кошику
од. на суму грн.
| IS61LPS204836B-166TQLI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 3.3V; 3.8ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 3.3V
Access time: 3.8ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 3.3V; 3.8ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 3.3V
Access time: 3.8ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS61VPS204836B-250B3L |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 2.8ns; TFBGA165; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 2.5V
Access time: 2.8ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 2.8ns; TFBGA165; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 2.5V
Access time: 2.8ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS61VPS204836B-250B3LI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 2.8ns; TFBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 2.5V
Access time: 2.8ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 2.8ns; TFBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 2.5V
Access time: 2.8ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS61VVPS204818B-166B3LI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 1.8V; 3.8ns; TFBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 2Mx18bit
Operating voltage: 1.8V
Access time: 3.8ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 1.8V; 3.8ns; TFBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 2Mx18bit
Operating voltage: 1.8V
Access time: 3.8ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS61LPS51218B-200TQLI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 512kx18bit
Memory: 9Mb SRAM
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 512kx18bit
Memory: 9Mb SRAM
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS61LPS51218B-200TQLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 512kx18bit
Memory: 9Mb SRAM
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 512kx18bit
Memory: 9Mb SRAM
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| IS61NLP51218B-200TQLI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 512kx18bit
Memory: 9Mb SRAM
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 512kx18bit
Memory: 9Mb SRAM
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS61NLP51218B-200TQLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 512kx18bit
Memory: 9Mb SRAM
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 512kx18bit
Memory: 9Mb SRAM
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| IS61NLP102418B-200B3L |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel
Kind of interface: parallel
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: 0...70°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel
Kind of interface: parallel
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: 0...70°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS61NLP102418B-200B3LI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel
Kind of interface: parallel
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel
Kind of interface: parallel
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS61NLP102418B-200B3LI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel
Kind of interface: parallel
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel
Kind of interface: parallel
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| IS61NLP102418B-200TQLI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS61NLP102418B-200TQLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| IS61NLP204818B-200TQLI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 3.1ns; TQFP100; parallel
Kind of interface: parallel
Case: TQFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 2Mx18bit
Memory: 36Mb SRAM
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 3.1ns; TQFP100; parallel
Kind of interface: parallel
Case: TQFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 2Mx18bit
Memory: 36Mb SRAM
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS61NVP204818B-200TQLI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 2.5V; 3.1ns; TQFP100; parallel
Kind of interface: parallel
Case: TQFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 2.5V
Memory organisation: 2Mx18bit
Memory: 36Mb SRAM
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 2.5V; 3.1ns; TQFP100; parallel
Kind of interface: parallel
Case: TQFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 2.5V
Memory organisation: 2Mx18bit
Memory: 36Mb SRAM
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS61WV25616BLS-25TLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 25ns; TSOP44 II
Mounting: SMD
Case: TSOP44 II
Kind of interface: parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 25ns
Operating voltage: 2.4...3.6V
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 25ns; TSOP44 II
Mounting: SMD
Case: TSOP44 II
Kind of interface: parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 25ns
Operating voltage: 2.4...3.6V
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
товару немає в наявності
В кошику
од. на суму грн.
| IS61WV25616BLS-25TLI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 25ns; TSOP44 II
Mounting: SMD
Case: TSOP44 II
Kind of interface: parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 25ns
Operating voltage: 2.4...3.6V
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 25ns; TSOP44 II
Mounting: SMD
Case: TSOP44 II
Kind of interface: parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 25ns
Operating voltage: 2.4...3.6V
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
товару немає в наявності
В кошику
од. на суму грн.
| IS62WV51216BLL-55TLI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 3.3V; 55ns; TSOP44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP44
Kind of interface: parallel
Mounting: SMD
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 3.3V; 55ns; TSOP44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP44
Kind of interface: parallel
Mounting: SMD
Operating voltage: 3.3V
на замовлення 2916 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 474.01 грн |
| 3+ | 414.64 грн |
| 10+ | 394.70 грн |
| 25+ | 382.74 грн |
| 50+ | 376.37 грн |
| 135+ | 360.42 грн |
| IS61QDPB42M36A1-500M3LI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 1.8V
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 1.8V
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS42S16400J-5TL |
![]() |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 200MHz; 5ns; TSOP54 II; tube
Clock frequency: 200MHz
Memory: 64Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: 0...70°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP54 II
Kind of package: tube
Memory organisation: 1Mx16bitx4
Kind of interface: parallel
Mounting: SMD
Access time: 5ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 200MHz; 5ns; TSOP54 II; tube
Clock frequency: 200MHz
Memory: 64Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: 0...70°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP54 II
Kind of package: tube
Memory organisation: 1Mx16bitx4
Kind of interface: parallel
Mounting: SMD
Access time: 5ns
на замовлення 49 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 294.54 грн |
| 5+ | 245.59 грн |
| 25+ | 204.93 грн |
| IS42S16400J-6TL |
![]() |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 166MHz; 6ns; TSOP54 II; 0÷70°C
Clock frequency: 166MHz
Memory: 64Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: 0...70°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP54 II
Kind of package: tube
Memory organisation: 4Mx16bit
Kind of interface: parallel
Mounting: SMD
Access time: 6ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 166MHz; 6ns; TSOP54 II; 0÷70°C
Clock frequency: 166MHz
Memory: 64Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: 0...70°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP54 II
Kind of package: tube
Memory organisation: 4Mx16bit
Kind of interface: parallel
Mounting: SMD
Access time: 6ns
на замовлення 66 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 231.85 грн |
| 5+ | 190.57 грн |
| 25+ | 168.25 грн |
| IS42S16400J-6TLI |
![]() |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 166MHz; 6ns; TSOP54 II; tube
Clock frequency: 166MHz
Memory: 64Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Part status: Not recommended for new designs
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP54 II
Kind of package: tube
Memory organisation: 4Mx16bit
Kind of interface: parallel
Mounting: SMD
Access time: 6ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 166MHz; 6ns; TSOP54 II; tube
Clock frequency: 166MHz
Memory: 64Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Part status: Not recommended for new designs
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP54 II
Kind of package: tube
Memory organisation: 4Mx16bit
Kind of interface: parallel
Mounting: SMD
Access time: 6ns
на замовлення 27 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 170.64 грн |
| 10+ | 167.45 грн |
| IS42S16400J-7TL |
![]() |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 143MHz; 7ns; TSOP54 II; 0÷70°C
Clock frequency: 143MHz
Memory: 64Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: 0...70°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP54 II
Kind of package: tube
Memory organisation: 4Mx16bit
Kind of interface: parallel
Mounting: SMD
Access time: 7ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 143MHz; 7ns; TSOP54 II; 0÷70°C
Clock frequency: 143MHz
Memory: 64Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: 0...70°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP54 II
Kind of package: tube
Memory organisation: 4Mx16bit
Kind of interface: parallel
Mounting: SMD
Access time: 7ns
на замовлення 430 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 181.19 грн |
| 5+ | 161.87 грн |
| 25+ | 154.69 грн |
| 108+ | 151.50 грн |
| IS42S32200L-6TL |
![]() |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TSOP86 II
Clock frequency: 166MHz
Memory: 64Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: 0...70°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP86 II
Kind of package: tube
Memory organisation: 512kx32bitx4
Kind of interface: parallel
Mounting: SMD
Access time: 6ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TSOP86 II
Clock frequency: 166MHz
Memory: 64Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: 0...70°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP86 II
Kind of package: tube
Memory organisation: 512kx32bitx4
Kind of interface: parallel
Mounting: SMD
Access time: 6ns
на замовлення 173 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 340.05 грн |
| 3+ | 296.63 грн |
| 10+ | 263.14 грн |
| 25+ | 240.01 грн |
| IS42S32200L-7TL |
![]() |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TSOP86 II
Clock frequency: 143MHz
Memory: 64Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: 0...70°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP86 II
Kind of package: tube
Memory organisation: 512kx32bitx4
Kind of interface: parallel
Mounting: SMD
Access time: 7ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TSOP86 II
Clock frequency: 143MHz
Memory: 64Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: 0...70°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP86 II
Kind of package: tube
Memory organisation: 512kx32bitx4
Kind of interface: parallel
Mounting: SMD
Access time: 7ns
на замовлення 283 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 345.21 грн |
| 5+ | 287.06 грн |
| 25+ | 255.16 грн |
| 108+ | 239.22 грн |
| IS42S32200L-7TLI |
![]() |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TSOP86 II
Clock frequency: 143MHz
Memory: 64Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP86 II
Kind of package: tube
Memory organisation: 512kx32bitx4
Kind of interface: parallel
Mounting: SMD
Access time: 7ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TSOP86 II
Clock frequency: 143MHz
Memory: 64Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP86 II
Kind of package: tube
Memory organisation: 512kx32bitx4
Kind of interface: parallel
Mounting: SMD
Access time: 7ns
на замовлення 51 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 325.46 грн |
| IS42S32400F-6TL |
![]() |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 166MHz; 6ns; TSOP86 II; tube
Clock frequency: 166MHz
Memory: 128Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: 0...70°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP86 II
Kind of package: tube
Memory organisation: 4Mx32bit
Kind of interface: parallel
Mounting: SMD
Access time: 6ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 166MHz; 6ns; TSOP86 II; tube
Clock frequency: 166MHz
Memory: 128Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: 0...70°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP86 II
Kind of package: tube
Memory organisation: 4Mx32bit
Kind of interface: parallel
Mounting: SMD
Access time: 6ns
на замовлення 31 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 715.31 грн |
| 5+ | 598.04 грн |
| 25+ | 515.11 грн |
| IS62WV51216ALL-70BLI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 70ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 1.65...2.2V
Access time: 70ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 70ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 1.65...2.2V
Access time: 70ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.










