Продукція > LUGUANG ELECTRONIC > Всі товари виробника LUGUANG ELECTRONIC (897) > Сторінка 11 з 15
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| HER106 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 1A; tape; Ifsm: 30A; DO41; Ufmax: 1.7V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.7V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HER107 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 800V; 1A; tape; Ifsm: 30A; DO41; Ufmax: 1.7V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 1A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.7V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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HER108 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 1A; tape; Ifsm: 30A; DO41; Ufmax: 1.7V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.7V |
на замовлення 4751 шт: термін постачання 14-30 дні (днів) |
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| HER152 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 1.5A; tape; Ifsm: 50A; DO15; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 1.5A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 50A Case: DO15 Max. forward voltage: 1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HER153 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 1.5A; tape; Ifsm: 50A; DO15; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1.5A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 50A Case: DO15 Max. forward voltage: 1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HER154 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 300V; 1.5A; tape; Ifsm: 50A; DO15; Ufmax: 1.3V Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 1.5A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 50A Case: DO15 Max. forward voltage: 1.3V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HER155 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 1.5A; tape; Ifsm: 50A; DO15; Ufmax: 1.3V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1.5A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 50A Case: DO15 Max. forward voltage: 1.3V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HER156 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 1.5A; tape; Ifsm: 50A; DO15; Ufmax: 1.7V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1.5A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 50A Case: DO15 Max. forward voltage: 1.7V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HER157 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 800V; 1.5A; tape; Ifsm: 50A; DO15; Ufmax: 1.7V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 1.5A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 50A Case: DO15 Max. forward voltage: 1.7V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HER158 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 1.5A; tape; Ifsm: 50A; DO15; Ufmax: 1.7V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1.5A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 50A Case: DO15 Max. forward voltage: 1.7V |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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| HER203 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 2A; tape; Ifsm: 60A; DO15; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 2A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 60A Case: DO15 Max. forward voltage: 1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HER204 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 300V; 2A; tape; Ifsm: 60A; DO15; Ufmax: 1.3V Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 2A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 60A Case: DO15 Max. forward voltage: 1.3V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HER205 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 2A; tape; Ifsm: 60A; DO15; Ufmax: 1.3V Kind of package: tape Semiconductor structure: single diode Case: DO15 Mounting: THT Type of diode: rectifying Max. forward voltage: 1.3V Load current: 2A Max. off-state voltage: 0.4kV Max. forward impulse current: 60A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HER207 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 800V; 2A; tape; Ifsm: 60A; DO15; Ufmax: 1.7V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 2A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 60A Case: DO15 Max. forward voltage: 1.7V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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HER208 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 2A; tape; Ifsm: 60A; DO15; Ufmax: 1.7V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 2A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 60A Case: DO15 Max. forward voltage: 1.7V |
на замовлення 2994 шт: термін постачання 14-30 дні (днів) |
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| HER302 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 3A; tape; Ifsm: 125A; DO201AD; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 3A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 125A Case: DO201AD Max. forward voltage: 1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HER303 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 3A; tape; Ifsm: 125A; DO201AD; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 125A Case: DO201AD Max. forward voltage: 1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HER304 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 300V; 3A; tape; Ifsm: 125A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 3A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 125A Case: DO201AD Max. forward voltage: 1.3V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HER305 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 3A; tape; Ifsm: 125A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 3A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 125A Case: DO201AD Max. forward voltage: 1.3V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HER306 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 3A; tape; Ifsm: 125A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 125A Case: DO201AD Max. forward voltage: 1.7V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HER307 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 800V; 3A; tape; Ifsm: 125A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 3A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 125A Case: DO201AD Max. forward voltage: 1.7V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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HER308 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 125A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 3A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 125A Case: DO201AD Max. forward voltage: 1.7V |
на замовлення 1250 шт: термін постачання 14-30 дні (днів) |
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| HER503 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 5A; tape; Ifsm: 200A; DO27; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 5A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HER504 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 300V; 5A; tape; Ifsm: 200A; DO27; Ufmax: 1.3V Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 5A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1.3V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HER506 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.7V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1.7V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HER507 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 800V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.7V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 3A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1.7V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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HER508 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.7V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 3A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1.7V |
на замовлення 1250 шт: термін постачання 14-30 дні (днів) |
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| HER605 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 6A; tape; Ifsm: 200A; R6; Ufmax: 1.3V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 6A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 200A Case: R6 Max. forward voltage: 1.3V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HER605S | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.3V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 6A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1.3V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HER606 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 6A; tape; Ifsm: 200A; R6; Ufmax: 1.7V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 6A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 200A Case: R6 Max. forward voltage: 1.7V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HER606S | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.7V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 6A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1.7V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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HER608 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 6A; tape; Ifsm: 200A; R6; Ufmax: 1.7V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 6A Semiconductor structure: single diode Case: R6 Max. forward voltage: 1.7V Max. forward impulse current: 200A Kind of package: tape |
на замовлення 283 шт: термін постачання 14-30 дні (днів) |
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HER608S | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.7V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 6A Semiconductor structure: single diode Case: DO27 Max. forward voltage: 1.7V Max. forward impulse current: 200A Kind of package: tape |
на замовлення 1245 шт: термін постачання 14-30 дні (днів) |
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| LGE206 | LUGUANG ELECTRONIC |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 2A; Ifsm: 60A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 2A Max. forward impulse current: 60A Version: flat Case: D3K Electrical mounting: THT Max. forward voltage: 1.05V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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LGE2300 | LUGUANG ELECTRONIC |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 4A; 1.25W; SOT23 Polarisation: unipolar Case: SOT23 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Gate charge: 11nC On-state resistance: 32mΩ Power dissipation: 1.25W Drain current: 4A Gate-source voltage: ±12V Drain-source voltage: 20V Kind of package: reel; tape |
на замовлення 3640 шт: термін постачання 14-30 дні (днів) |
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LGE2301 | LUGUANG ELECTRONIC |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -3A; 1W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Type of transistor: P-MOSFET Drain-source voltage: -20V Drain current: -3A Gate charge: 12nC On-state resistance: 0.14Ω Power dissipation: 1W Gate-source voltage: ±12V Polarisation: unipolar Kind of channel: enhancement |
на замовлення 502 шт: термін постачання 14-30 дні (днів) |
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LGE2312 | LUGUANG ELECTRONIC |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 4.9A; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Drain-source voltage: 20V Drain current: 4.9A On-state resistance: 31mΩ Polarisation: unipolar Kind of channel: enhancement |
на замовлення 3290 шт: термін постачання 14-30 дні (днів) |
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| LGE3D20120A | LUGUANG ELECTRONIC |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; Ir: 50uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 2.2V Max. forward impulse current: 160A Kind of package: tube Leakage current: 50µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| LGE3D20120D | LUGUANG ELECTRONIC |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 2V Max. forward impulse current: 160A Kind of package: tube Leakage current: 30µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| LGE3D20120H | LUGUANG ELECTRONIC |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ufmax: 2V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 2V Max. load current: 100A Max. forward impulse current: 130A Kind of package: tube Leakage current: 50µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| LGE3M1K170B | LUGUANG ELECTRONIC |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.5A; Idm: 6A; 69W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 3.5A Pulsed drain current: 6A Power dissipation: 69W Case: TO247-3 Gate-source voltage: -5...20V On-state resistance: 1.5Ω Mounting: THT Gate charge: 21.8nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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LGEA1117-1.5 | LUGUANG ELECTRONIC |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT89; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 1.5V Output current: 1A Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 3...10V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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LGEA1117-1.8 | LUGUANG ELECTRONIC |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT89; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 1.8V Output current: 1A Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 3.2...10V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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LGEA1117-2.5 | LUGUANG ELECTRONIC |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 2.5V Output current: 1A Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 3.9...10V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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LGEA1117-3.3 | LUGUANG ELECTRONIC |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT89; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 3.3V Output current: 1A Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 4.75...10V |
на замовлення 975 шт: термін постачання 14-30 дні (днів) |
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LGEA1117-5.0 | LUGUANG ELECTRONIC |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT89; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 5V Output current: 1A Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 6.5...12V |
на замовлення 1165 шт: термін постачання 14-30 дні (днів) |
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LGEA1117-ADJ | LUGUANG ELECTRONIC |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SOT89 Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 1.15V Output voltage: 1.25...12V Output current: 1A Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.4...8V |
на замовлення 920 шт: термін постачання 14-30 дні (днів) |
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LGEGB15N65T2 | LUGUANG ELECTRONIC |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 650V; 15A; 125W; TO263 Type of transistor: IGBT Power dissipation: 125W Case: TO263 Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Turn-off time: 150ns Turn-on time: 40ns Features of semiconductor devices: integrated anti-parallel diode Collector current: 15A Gate-emitter voltage: ±20V Pulsed collector current: 60A Collector-emitter voltage: 650V |
на замовлення 608 шт: термін постачання 14-30 дні (днів) |
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LGEGF15N65T2 | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 15A; 30.6W; TO220FP Type of transistor: IGBT Power dissipation: 30.6W Case: TO220FP Mounting: THT Gate charge: 45nC Kind of package: tube Turn-off time: 150ns Turn-on time: 40ns Features of semiconductor devices: integrated anti-parallel diode Collector current: 15A Gate-emitter voltage: ±20V Pulsed collector current: 60A Collector-emitter voltage: 650V |
на замовлення 80 шт: термін постачання 14-30 дні (днів) |
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LGEGP15N65T2 | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 15A; 125W; TO220 Type of transistor: IGBT Power dissipation: 125W Case: TO220 Mounting: THT Gate charge: 45nC Kind of package: tube Turn-off time: 150ns Turn-on time: 40ns Features of semiconductor devices: integrated anti-parallel diode Collector current: 15A Gate-emitter voltage: ±20V Pulsed collector current: 60A Collector-emitter voltage: 650V |
на замовлення 174 шт: термін постачання 14-30 дні (днів) |
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LGEGW100N65FP | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 100A; 500W; TO247PLUS Type of transistor: IGBT Power dissipation: 500W Case: TO247PLUS Mounting: THT Gate charge: 135nC Kind of package: tube Turn-on time: 205ns Turn-off time: 375ns Gate-emitter voltage: ±20V Features of semiconductor devices: integrated anti-parallel diode Collector current: 100A Pulsed collector current: 300A Collector-emitter voltage: 650V |
на замовлення 96 шт: термін постачання 14-30 дні (днів) |
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LGEGW15N120TS | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 15A; 40W; TO247 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 15A Power dissipation: 40W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 45A Mounting: THT Gate charge: 0.12µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 50ns Turn-off time: 245ns |
на замовлення 364 шт: термін постачання 14-30 дні (днів) |
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LGEGW20N65SEK | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 20A; 82W; TO247 Mounting: THT Case: TO247 Kind of package: tube Turn-off time: 232ns Collector current: 20A Gate-emitter voltage: ±30V Power dissipation: 82W Pulsed collector current: 80A Collector-emitter voltage: 650V Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Gate charge: 82nC Turn-on time: 74ns |
на замовлення 136 шт: термін постачання 14-30 дні (днів) |
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LGEGW25N120S | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 25A; 100W; TO247 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 100W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 80A Mounting: THT Gate charge: 130nC Kind of package: tube Turn-on time: 57ns Features of semiconductor devices: integrated anti-parallel diode Turn-off time: 460ns |
на замовлення 78 шт: термін постачання 14-30 дні (днів) |
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LGEGW40N120F | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 110W; TO247 Type of transistor: IGBT Power dissipation: 110W Case: TO247 Mounting: THT Gate charge: 107nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector-emitter voltage: 1.2kV Turn-on time: 134ns Turn-off time: 503ns Gate-emitter voltage: ±30V Collector current: 40A Pulsed collector current: 120A |
на замовлення 130 шт: термін постачання 14-30 дні (днів) |
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LGEGW40N120F2 | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 417W; TO247 Type of transistor: IGBT Power dissipation: 417W Case: TO247 Mounting: THT Gate charge: 250nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector-emitter voltage: 1.2kV Turn-on time: 135ns Turn-off time: 270ns Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 160A |
на замовлення 186 шт: термін постачання 14-30 дні (днів) |
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LGEGW40N120TS | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 300W; TO247 Type of transistor: IGBT Power dissipation: 300W Case: TO247 Mounting: THT Gate charge: 0.21µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector-emitter voltage: 1.2kV Turn-on time: 121ns Turn-off time: 310ns Gate-emitter voltage: ±30V Collector current: 40A Pulsed collector current: 120A |
на замовлення 112 шт: термін постачання 14-30 дні (днів) |
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LGEGW40N65F1 | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 94W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 94W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 83nC Kind of package: tube Turn-on time: 96ns Turn-off time: 187ns Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 30 шт: термін постачання 14-30 дні (днів) |
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LGEGW50N65F1A | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 50A; 312W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 312W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 180nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 62ns Turn-off time: 268ns |
на замовлення 21 шт: термін постачання 14-30 дні (днів) |
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LGEGW50N65SEK | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 50A; 166W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 166W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 200A Mounting: THT Gate charge: 200nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 137ns Turn-off time: 331ns |
на замовлення 124 шт: термін постачання 14-30 дні (днів) |
|
| HER106 |
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Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; tape; Ifsm: 30A; DO41; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.7V
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; tape; Ifsm: 30A; DO41; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.7V
товару немає в наявності
В кошику
од. на суму грн.
| HER107 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; tape; Ifsm: 30A; DO41; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.7V
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; tape; Ifsm: 30A; DO41; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.7V
товару немає в наявності
В кошику
од. на суму грн.
| HER108 | ![]() |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; tape; Ifsm: 30A; DO41; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.7V
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; tape; Ifsm: 30A; DO41; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.7V
на замовлення 4751 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 9.06 грн |
| 69+ | 6.14 грн |
| 126+ | 3.36 грн |
| 500+ | 2.04 грн |
| 1000+ | 1.55 грн |
| 2500+ | 1.38 грн |
| HER152 |
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Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1.5A; tape; Ifsm: 50A; DO15; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1.5A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 50A
Case: DO15
Max. forward voltage: 1V
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1.5A; tape; Ifsm: 50A; DO15; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1.5A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 50A
Case: DO15
Max. forward voltage: 1V
товару немає в наявності
В кошику
од. на суму грн.
| HER153 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1.5A; tape; Ifsm: 50A; DO15; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1.5A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 50A
Case: DO15
Max. forward voltage: 1V
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1.5A; tape; Ifsm: 50A; DO15; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1.5A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 50A
Case: DO15
Max. forward voltage: 1V
товару немає в наявності
В кошику
од. на суму грн.
| HER154 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 1.5A; tape; Ifsm: 50A; DO15; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 1.5A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 50A
Case: DO15
Max. forward voltage: 1.3V
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 1.5A; tape; Ifsm: 50A; DO15; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 1.5A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 50A
Case: DO15
Max. forward voltage: 1.3V
товару немає в наявності
В кошику
од. на суму грн.
| HER155 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1.5A; tape; Ifsm: 50A; DO15; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1.5A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 50A
Case: DO15
Max. forward voltage: 1.3V
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1.5A; tape; Ifsm: 50A; DO15; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1.5A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 50A
Case: DO15
Max. forward voltage: 1.3V
товару немає в наявності
В кошику
од. на суму грн.
| HER156 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1.5A; tape; Ifsm: 50A; DO15; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1.5A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 50A
Case: DO15
Max. forward voltage: 1.7V
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1.5A; tape; Ifsm: 50A; DO15; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1.5A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 50A
Case: DO15
Max. forward voltage: 1.7V
товару немає в наявності
В кошику
од. на суму грн.
| HER157 | ![]() |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1.5A; tape; Ifsm: 50A; DO15; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1.5A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 50A
Case: DO15
Max. forward voltage: 1.7V
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1.5A; tape; Ifsm: 50A; DO15; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1.5A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 50A
Case: DO15
Max. forward voltage: 1.7V
товару немає в наявності
В кошику
од. на суму грн.
| HER158 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1.5A; tape; Ifsm: 50A; DO15; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1.5A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 50A
Case: DO15
Max. forward voltage: 1.7V
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1.5A; tape; Ifsm: 50A; DO15; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1.5A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 50A
Case: DO15
Max. forward voltage: 1.7V
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 23.55 грн |
| 33+ | 13.12 грн |
| 100+ | 7.93 грн |
| 500+ | 4.45 грн |
| 1000+ | 2.71 грн |
| 3000+ | 1.75 грн |
| HER203 |
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Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; tape; Ifsm: 60A; DO15; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 60A
Case: DO15
Max. forward voltage: 1V
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; tape; Ifsm: 60A; DO15; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 60A
Case: DO15
Max. forward voltage: 1V
товару немає в наявності
В кошику
од. на суму грн.
| HER204 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 2A; tape; Ifsm: 60A; DO15; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 2A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 60A
Case: DO15
Max. forward voltage: 1.3V
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 2A; tape; Ifsm: 60A; DO15; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 2A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 60A
Case: DO15
Max. forward voltage: 1.3V
товару немає в наявності
В кошику
од. на суму грн.
| HER205 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 2A; tape; Ifsm: 60A; DO15; Ufmax: 1.3V
Kind of package: tape
Semiconductor structure: single diode
Case: DO15
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.3V
Load current: 2A
Max. off-state voltage: 0.4kV
Max. forward impulse current: 60A
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 2A; tape; Ifsm: 60A; DO15; Ufmax: 1.3V
Kind of package: tape
Semiconductor structure: single diode
Case: DO15
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.3V
Load current: 2A
Max. off-state voltage: 0.4kV
Max. forward impulse current: 60A
товару немає в наявності
В кошику
од. на суму грн.
| HER207 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 2A; tape; Ifsm: 60A; DO15; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 2A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 60A
Case: DO15
Max. forward voltage: 1.7V
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 2A; tape; Ifsm: 60A; DO15; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 2A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 60A
Case: DO15
Max. forward voltage: 1.7V
товару немає в наявності
В кошику
од. на суму грн.
| HER208 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 2A; tape; Ifsm: 60A; DO15; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 2A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 60A
Case: DO15
Max. forward voltage: 1.7V
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 2A; tape; Ifsm: 60A; DO15; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 2A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 60A
Case: DO15
Max. forward voltage: 1.7V
на замовлення 2994 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 23.55 грн |
| 32+ | 13.16 грн |
| 100+ | 7.94 грн |
| 500+ | 4.46 грн |
| 1000+ | 2.71 грн |
| HER302 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; tape; Ifsm: 125A; DO201AD; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1V
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; tape; Ifsm: 125A; DO201AD; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1V
товару немає в наявності
В кошику
од. на суму грн.
| HER303 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; tape; Ifsm: 125A; DO201AD; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1V
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; tape; Ifsm: 125A; DO201AD; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1V
товару немає в наявності
В кошику
од. на суму грн.
| HER304 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 3A; tape; Ifsm: 125A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.3V
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 3A; tape; Ifsm: 125A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.3V
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| HER305 |
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Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; tape; Ifsm: 125A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.3V
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; tape; Ifsm: 125A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.3V
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| HER306 |
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Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; tape; Ifsm: 125A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.7V
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; tape; Ifsm: 125A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.7V
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| HER307 | ![]() |
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Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; tape; Ifsm: 125A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.7V
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; tape; Ifsm: 125A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.7V
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| HER308 | ![]() |
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Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 125A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.7V
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 125A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.7V
на замовлення 1250 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 38.05 грн |
| 20+ | 21.53 грн |
| 35+ | 12.08 грн |
| 100+ | 7.31 грн |
| 250+ | 4.73 грн |
| 500+ | 4.14 грн |
| 1250+ | 3.83 грн |
| HER503 |
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Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5A; tape; Ifsm: 200A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5A; tape; Ifsm: 200A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
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| HER504 |
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Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5A; tape; Ifsm: 200A; DO27; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 5A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.3V
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5A; tape; Ifsm: 200A; DO27; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 5A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.3V
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| HER506 |
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Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.7V
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.7V
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| HER507 |
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Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.7V
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.7V
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| HER508 |
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Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.7V
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.7V
на замовлення 1250 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 45.29 грн |
| 17+ | 25.66 грн |
| 30+ | 14.40 грн |
| 100+ | 8.73 грн |
| 250+ | 5.64 грн |
| 500+ | 4.94 грн |
| 1250+ | 4.53 грн |
| HER605 |
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Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 6A; tape; Ifsm: 200A; R6; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 6A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: R6
Max. forward voltage: 1.3V
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 6A; tape; Ifsm: 200A; R6; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 6A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: R6
Max. forward voltage: 1.3V
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| HER605S |
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Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 6A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.3V
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 6A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.3V
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| HER606 |
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Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 6A; tape; Ifsm: 200A; R6; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: R6
Max. forward voltage: 1.7V
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 6A; tape; Ifsm: 200A; R6; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: R6
Max. forward voltage: 1.7V
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| HER606S |
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Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.7V
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.7V
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| HER608 |
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Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 6A; tape; Ifsm: 200A; R6; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 6A
Semiconductor structure: single diode
Case: R6
Max. forward voltage: 1.7V
Max. forward impulse current: 200A
Kind of package: tape
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 6A; tape; Ifsm: 200A; R6; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 6A
Semiconductor structure: single diode
Case: R6
Max. forward voltage: 1.7V
Max. forward impulse current: 200A
Kind of package: tape
на замовлення 283 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 36.24 грн |
| 21+ | 20.36 грн |
| 100+ | 10.35 грн |
| 250+ | 6.73 грн |
| HER608S |
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Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 6A
Semiconductor structure: single diode
Case: DO27
Max. forward voltage: 1.7V
Max. forward impulse current: 200A
Kind of package: tape
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 6A
Semiconductor structure: single diode
Case: DO27
Max. forward voltage: 1.7V
Max. forward impulse current: 200A
Kind of package: tape
на замовлення 1245 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 48.92 грн |
| 16+ | 27.17 грн |
| 28+ | 15.23 грн |
| 100+ | 9.25 грн |
| 250+ | 5.97 грн |
| 500+ | 5.22 грн |
| LGE206 |
Виробник: LUGUANG ELECTRONIC
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 2A; Ifsm: 60A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 2A
Max. forward impulse current: 60A
Version: flat
Case: D3K
Electrical mounting: THT
Max. forward voltage: 1.05V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 2A; Ifsm: 60A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 2A
Max. forward impulse current: 60A
Version: flat
Case: D3K
Electrical mounting: THT
Max. forward voltage: 1.05V
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| LGE2300 |
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Виробник: LUGUANG ELECTRONIC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4A; 1.25W; SOT23
Polarisation: unipolar
Case: SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Gate charge: 11nC
On-state resistance: 32mΩ
Power dissipation: 1.25W
Drain current: 4A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4A; 1.25W; SOT23
Polarisation: unipolar
Case: SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Gate charge: 11nC
On-state resistance: 32mΩ
Power dissipation: 1.25W
Drain current: 4A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of package: reel; tape
на замовлення 3640 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 160+ | 3.08 грн |
| 180+ | 2.56 грн |
| 500+ | 2.26 грн |
| 3000+ | 2.08 грн |
| LGE2301 |
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Виробник: LUGUANG ELECTRONIC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; 1W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
Drain-source voltage: -20V
Drain current: -3A
Gate charge: 12nC
On-state resistance: 0.14Ω
Power dissipation: 1W
Gate-source voltage: ±12V
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; 1W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
Drain-source voltage: -20V
Drain current: -3A
Gate charge: 12nC
On-state resistance: 0.14Ω
Power dissipation: 1W
Gate-source voltage: ±12V
Polarisation: unipolar
Kind of channel: enhancement
на замовлення 502 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 135+ | 3.40 грн |
| 165+ | 2.62 грн |
| 500+ | 2.32 грн |
| LGE2312 |
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Виробник: LUGUANG ELECTRONIC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Drain-source voltage: 20V
Drain current: 4.9A
On-state resistance: 31mΩ
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Drain-source voltage: 20V
Drain current: 4.9A
On-state resistance: 31mΩ
Polarisation: unipolar
Kind of channel: enhancement
на замовлення 3290 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 65+ | 7.52 грн |
| 100+ | 4.37 грн |
| 250+ | 3.95 грн |
| 1000+ | 3.48 грн |
| 3000+ | 3.31 грн |
| LGE3D20120A |
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Виробник: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; Ir: 50uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 2.2V
Max. forward impulse current: 160A
Kind of package: tube
Leakage current: 50µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; Ir: 50uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 2.2V
Max. forward impulse current: 160A
Kind of package: tube
Leakage current: 50µA
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| LGE3D20120D |
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Виробник: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2V
Max. forward impulse current: 160A
Kind of package: tube
Leakage current: 30µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2V
Max. forward impulse current: 160A
Kind of package: tube
Leakage current: 30µA
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| LGE3D20120H |
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Виробник: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2V
Max. load current: 100A
Max. forward impulse current: 130A
Kind of package: tube
Leakage current: 50µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2V
Max. load current: 100A
Max. forward impulse current: 130A
Kind of package: tube
Leakage current: 50µA
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| LGE3M1K170B |
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Виробник: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.5A; Idm: 6A; 69W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 3.5A
Pulsed drain current: 6A
Power dissipation: 69W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 21.8nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.5A; Idm: 6A; 69W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 3.5A
Pulsed drain current: 6A
Power dissipation: 69W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 21.8nC
Kind of package: tube
Kind of channel: enhancement
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| LGEA1117-1.5 |
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Виробник: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3...10V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3...10V
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В кошику
од. на суму грн.
| LGEA1117-1.8 |
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Виробник: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.8V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.2...10V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.8V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.2...10V
товару немає в наявності
В кошику
од. на суму грн.
| LGEA1117-2.5 |
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Виробник: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 2.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.9...10V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 2.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.9...10V
товару немає в наявності
В кошику
од. на суму грн.
| LGEA1117-3.3 |
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Виробник: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 3.3V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 4.75...10V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 3.3V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 4.75...10V
на замовлення 975 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 35+ | 14.13 грн |
| 50+ | 8.45 грн |
| 100+ | 7.00 грн |
| 500+ | 5.95 грн |
| LGEA1117-5.0 |
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Виробник: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
на замовлення 1165 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 35+ | 14.13 грн |
| 50+ | 8.45 грн |
| 100+ | 7.08 грн |
| 500+ | 6.01 грн |
| 1000+ | 5.63 грн |
| LGEA1117-ADJ |
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Виробник: LUGUANG ELECTRONIC
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SOT89
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.25...12V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.4...8V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SOT89
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.25...12V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.4...8V
на замовлення 920 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 35+ | 13.04 грн |
| 55+ | 7.77 грн |
| 100+ | 6.52 грн |
| 500+ | 5.52 грн |
| LGEGB15N65T2 |
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Виробник: LUGUANG ELECTRONIC
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO263
Type of transistor: IGBT
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Turn-off time: 150ns
Turn-on time: 40ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO263
Type of transistor: IGBT
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Turn-off time: 150ns
Turn-on time: 40ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
на замовлення 608 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 49.82 грн |
| 11+ | 41.89 грн |
| 25+ | 37.35 грн |
| 100+ | 34.49 грн |
| 400+ | 32.47 грн |
| LGEGF15N65T2 |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 30.6W; TO220FP
Type of transistor: IGBT
Power dissipation: 30.6W
Case: TO220FP
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Turn-off time: 150ns
Turn-on time: 40ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 30.6W; TO220FP
Type of transistor: IGBT
Power dissipation: 30.6W
Case: TO220FP
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Turn-off time: 150ns
Turn-on time: 40ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
на замовлення 80 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 49.82 грн |
| 11+ | 41.81 грн |
| 12+ | 37.18 грн |
| 50+ | 34.40 грн |
| LGEGP15N65T2 |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO220
Type of transistor: IGBT
Power dissipation: 125W
Case: TO220
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Turn-off time: 150ns
Turn-on time: 40ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO220
Type of transistor: IGBT
Power dissipation: 125W
Case: TO220
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Turn-off time: 150ns
Turn-on time: 40ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
на замовлення 174 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 49.82 грн |
| 11+ | 41.81 грн |
| 12+ | 37.35 грн |
| 50+ | 34.49 грн |
| LGEGW100N65FP |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 500W; TO247PLUS
Type of transistor: IGBT
Power dissipation: 500W
Case: TO247PLUS
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Turn-on time: 205ns
Turn-off time: 375ns
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 100A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 500W; TO247PLUS
Type of transistor: IGBT
Power dissipation: 500W
Case: TO247PLUS
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Turn-on time: 205ns
Turn-off time: 375ns
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 100A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
на замовлення 96 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 452.94 грн |
| 3+ | 377.69 грн |
| 10+ | 334.79 грн |
| 30+ | 310.39 грн |
| LGEGW15N120TS |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 40W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 40W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 50ns
Turn-off time: 245ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 40W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 40W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 50ns
Turn-off time: 245ns
на замовлення 364 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 125.34 грн |
| 10+ | 111.04 грн |
| 30+ | 103.46 грн |
| 120+ | 95.89 грн |
| 240+ | 94.21 грн |
| LGEGW20N65SEK |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 82W; TO247
Mounting: THT
Case: TO247
Kind of package: tube
Turn-off time: 232ns
Collector current: 20A
Gate-emitter voltage: ±30V
Power dissipation: 82W
Pulsed collector current: 80A
Collector-emitter voltage: 650V
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 82nC
Turn-on time: 74ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 82W; TO247
Mounting: THT
Case: TO247
Kind of package: tube
Turn-off time: 232ns
Collector current: 20A
Gate-emitter voltage: ±30V
Power dissipation: 82W
Pulsed collector current: 80A
Collector-emitter voltage: 650V
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 82nC
Turn-on time: 74ns
на замовлення 136 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 125.34 грн |
| 10+ | 111.04 грн |
| 30+ | 103.46 грн |
| 120+ | 96.74 грн |
| LGEGW25N120S |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 100W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 100W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Turn-on time: 57ns
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 460ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 100W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 100W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Turn-on time: 57ns
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 460ns
на замовлення 78 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 151.41 грн |
| 10+ | 133.75 грн |
| 30+ | 124.49 грн |
| LGEGW40N120F |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 110W; TO247
Type of transistor: IGBT
Power dissipation: 110W
Case: TO247
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Turn-on time: 134ns
Turn-off time: 503ns
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 120A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 110W; TO247
Type of transistor: IGBT
Power dissipation: 110W
Case: TO247
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Turn-on time: 134ns
Turn-off time: 503ns
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 120A
на замовлення 130 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 303.47 грн |
| 3+ | 253.19 грн |
| 10+ | 223.75 грн |
| 30+ | 207.77 грн |
| 120+ | 194.31 грн |
| LGEGW40N120F2 |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 417W; TO247
Type of transistor: IGBT
Power dissipation: 417W
Case: TO247
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Turn-on time: 135ns
Turn-off time: 270ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 417W; TO247
Type of transistor: IGBT
Power dissipation: 417W
Case: TO247
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Turn-on time: 135ns
Turn-off time: 270ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
на замовлення 186 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 312.53 грн |
| 3+ | 260.76 грн |
| 10+ | 230.48 грн |
| 30+ | 213.66 грн |
| 120+ | 200.20 грн |
| LGEGW40N120TS |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247
Type of transistor: IGBT
Power dissipation: 300W
Case: TO247
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Turn-on time: 121ns
Turn-off time: 310ns
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 120A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247
Type of transistor: IGBT
Power dissipation: 300W
Case: TO247
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Turn-on time: 121ns
Turn-off time: 310ns
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 120A
на замовлення 112 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 303.47 грн |
| 3+ | 253.19 грн |
| 10+ | 223.75 грн |
| 30+ | 207.77 грн |
| LGEGW40N65F1 |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 94W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 94W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 187ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 94W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 94W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 187ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 30 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 125.34 грн |
| 10+ | 111.04 грн |
| 30+ | 103.46 грн |
| LGEGW50N65F1A |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 312W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 312W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 62ns
Turn-off time: 268ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 312W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 312W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 62ns
Turn-off time: 268ns
на замовлення 21 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 157.30 грн |
| 10+ | 138.79 грн |
| LGEGW50N65SEK |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 137ns
Turn-off time: 331ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 137ns
Turn-off time: 331ns
на замовлення 124 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 157.30 грн |
| 10+ | 138.79 грн |
| 30+ | 128.70 грн |
| 120+ | 121.13 грн |



















