Продукція > LUGUANG ELECTRONIC > Всі товари виробника LUGUANG ELECTRONIC (1776) > Сторінка 23 з 30
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| LGE3D10170H | LUGUANG ELECTRONIC | LGE3D10170H THT Schottky diodes |
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| LGE3D15065A | LUGUANG ELECTRONIC |
 Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 15A Semiconductor structure: single diode Case: TO220-2 Kind of package: tube Max. forward impulse current: 135A Max. forward voltage: 1.7V Leakage current: 10µA |
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| LGE3D15065A | LUGUANG ELECTRONIC |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 15A Semiconductor structure: single diode Case: TO220-2 Kind of package: tube Max. forward impulse current: 135A Max. forward voltage: 1.7V Leakage current: 10µA кількість в упаковці: 1 шт |
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| LGE3D20065A | LUGUANG ELECTRONIC | LGE3D20065A THT Schottky diodes |
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| LGE3D20065D | LUGUANG ELECTRONIC | LGE3D20065D THT Schottky diodes |
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| LGE3D20065H | LUGUANG ELECTRONIC | LGE3D20065H THT Schottky diodes |
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| LGE3D20120A | LUGUANG ELECTRONIC |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO220-2 Kind of package: tube Max. forward impulse current: 160A Max. forward voltage: 2.2V Leakage current: 50µA |
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| LGE3D20120A | LUGUANG ELECTRONIC |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO220-2 Kind of package: tube Max. forward impulse current: 160A Max. forward voltage: 2.2V Leakage current: 50µA кількість в упаковці: 1 шт |
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| LGE3D20120D | LUGUANG ELECTRONIC |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 160A Max. forward voltage: 2V Leakage current: 30µA |
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| LGE3D20120D | LUGUANG ELECTRONIC |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 160A Max. forward voltage: 2V Leakage current: 30µA кількість в упаковці: 1 шт |
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| LGE3D20120H | LUGUANG ELECTRONIC |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Max. load current: 100A Semiconductor structure: single diode Case: TO247-2 Kind of package: tube Max. forward impulse current: 130A Max. forward voltage: 2V Leakage current: 50µA |
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| LGE3D20120H | LUGUANG ELECTRONIC |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Max. load current: 100A Semiconductor structure: single diode Case: TO247-2 Kind of package: tube Max. forward impulse current: 130A Max. forward voltage: 2V Leakage current: 50µA кількість в упаковці: 1 шт |
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| LGE3D20170H | LUGUANG ELECTRONIC | LGE3D20170H THT Schottky diodes |
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| LGE3D30065D | LUGUANG ELECTRONIC | LGE3D30065D THT Schottky diodes |
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| LGE3D30065H | LUGUANG ELECTRONIC | LGE3D30065H THT Schottky diodes |
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| LGE3D30120D | LUGUANG ELECTRONIC |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 274A Max. forward voltage: 2.2V Leakage current: 20µA |
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| LGE3D30120D | LUGUANG ELECTRONIC |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 274A Max. forward voltage: 2.2V Leakage current: 20µA кількість в упаковці: 1 шт |
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| LGE3D30120H | LUGUANG ELECTRONIC |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Max. load current: 190A Semiconductor structure: single diode Case: TO247-2 Kind of package: tube Max. forward impulse current: 220A Max. forward voltage: 1.95V Leakage current: 0.1mA |
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| LGE3D30120H | LUGUANG ELECTRONIC |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Max. load current: 190A Semiconductor structure: single diode Case: TO247-2 Kind of package: tube Max. forward impulse current: 220A Max. forward voltage: 1.95V Leakage current: 0.1mA кількість в упаковці: 1 шт |
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| LGE3D40065H | LUGUANG ELECTRONIC | LGE3D40065H THT Schottky diodes |
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| LGE3D40120H | LUGUANG ELECTRONIC | LGE3D40120H THT Schottky diodes |
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| LGE3D42090H | LUGUANG ELECTRONIC |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 900V; 42A; TO247-2; tube Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Case: TO247-2 Max. off-state voltage: 900V Max. load current: 200A Max. forward voltage: 1.9V Load current: 42A Semiconductor structure: single diode Max. forward impulse current: 230A Leakage current: 0.16mA |
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| LGE3D42090H | LUGUANG ELECTRONIC |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 900V; 42A; TO247-2; tube Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Case: TO247-2 Max. off-state voltage: 900V Max. load current: 200A Max. forward voltage: 1.9V Load current: 42A Semiconductor structure: single diode Max. forward impulse current: 230A Leakage current: 0.16mA кількість в упаковці: 1 шт |
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| LGE3D50120H | LUGUANG ELECTRONIC | LGE3D50120H THT Schottky diodes |
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| LGE3M14120Q | LUGUANG ELECTRONIC | LGE3M14120Q THT N channel transistors |
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| LGE3M160120B | LUGUANG ELECTRONIC |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 14A; Idm: 48A; 134W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 14A Pulsed drain current: 48A Power dissipation: 134W Case: TO247-3 Gate-source voltage: -5...20V On-state resistance: 0.285Ω Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhanced |
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| LGE3M160120B | LUGUANG ELECTRONIC |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 14A; Idm: 48A; 134W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 14A Pulsed drain current: 48A Power dissipation: 134W Case: TO247-3 Gate-source voltage: -5...20V On-state resistance: 0.285Ω Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| LGE3M160120E | LUGUANG ELECTRONIC |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 11A; Idm: 38A; 127W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 11A Pulsed drain current: 38A Power dissipation: 127W Case: D2PAK Gate-source voltage: -5...20V On-state resistance: 0.285Ω Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhanced |
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| LGE3M160120E | LUGUANG ELECTRONIC |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 11A; Idm: 38A; 127W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 11A Pulsed drain current: 38A Power dissipation: 127W Case: D2PAK Gate-source voltage: -5...20V On-state resistance: 0.285Ω Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| LGE3M160120Q | LUGUANG ELECTRONIC | LGE3M160120Q THT N channel transistors |
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| LGE3M18120Q | LUGUANG ELECTRONIC |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 74A; Idm: 220A; 428W Case: TO247-4 Mounting: THT Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 235nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 220A Drain-source voltage: 1.2kV Drain current: 74A On-state resistance: 34mΩ Type of transistor: N-MOSFET Power dissipation: 428W Polarisation: unipolar |
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| LGE3M18120Q | LUGUANG ELECTRONIC |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 74A; Idm: 220A; 428W Case: TO247-4 Mounting: THT Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 235nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 220A Drain-source voltage: 1.2kV Drain current: 74A On-state resistance: 34mΩ Type of transistor: N-MOSFET Power dissipation: 428W Polarisation: unipolar кількість в упаковці: 1 шт |
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| LGE3M1K170B | LUGUANG ELECTRONIC |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.5A; Idm: 6A; 69W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 3.5A Pulsed drain current: 6A Power dissipation: 69W Case: TO247-3 Gate-source voltage: -5...20V On-state resistance: 1.5Ω Mounting: THT Gate charge: 21.8nC Kind of package: tube Kind of channel: enhanced |
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| LGE3M1K170B | LUGUANG ELECTRONIC |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.5A; Idm: 6A; 69W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 3.5A Pulsed drain current: 6A Power dissipation: 69W Case: TO247-3 Gate-source voltage: -5...20V On-state resistance: 1.5Ω Mounting: THT Gate charge: 21.8nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| LGE3M20120Q | LUGUANG ELECTRONIC |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; 428W; TO247-4 Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 254nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Mounting: THT Case: TO247-4 Drain-source voltage: 1.2kV Drain current: 71A On-state resistance: 39mΩ Type of transistor: N-MOSFET Power dissipation: 428W |
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| LGE3M20120Q | LUGUANG ELECTRONIC |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; 428W; TO247-4 Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 254nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Mounting: THT Case: TO247-4 Drain-source voltage: 1.2kV Drain current: 71A On-state resistance: 39mΩ Type of transistor: N-MOSFET Power dissipation: 428W кількість в упаковці: 1 шт |
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| LGE3M25120Q | LUGUANG ELECTRONIC | LGE3M25120Q THT N channel transistors |
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| LGE3M28065Q | LUGUANG ELECTRONIC |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 67A; Idm: 211A; 326W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 163nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...18V Pulsed drain current: 211A Mounting: THT Case: TO247-4 Drain-source voltage: 650V Drain current: 67A On-state resistance: 39mΩ Type of transistor: N-MOSFET Power dissipation: 326W |
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| LGE3M28065Q | LUGUANG ELECTRONIC |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 67A; Idm: 211A; 326W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 163nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...18V Pulsed drain current: 211A Mounting: THT Case: TO247-4 Drain-source voltage: 650V Drain current: 67A On-state resistance: 39mΩ Type of transistor: N-MOSFET Power dissipation: 326W кількість в упаковці: 1 шт |
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| LGE3M30065B | LUGUANG ELECTRONIC |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 64A; Idm: 212A; 326W Mounting: THT Drain current: 64A On-state resistance: 55mΩ Type of transistor: N-MOSFET Case: TO247-3 Power dissipation: 326W Polarisation: unipolar Kind of package: tube Gate charge: 147nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 212A Drain-source voltage: 650V |
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| LGE3M30065B | LUGUANG ELECTRONIC |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 64A; Idm: 212A; 326W Mounting: THT Drain current: 64A On-state resistance: 55mΩ Type of transistor: N-MOSFET Case: TO247-3 Power dissipation: 326W Polarisation: unipolar Kind of package: tube Gate charge: 147nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 212A Drain-source voltage: 650V кількість в упаковці: 1 шт |
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| LGE3M30065Q | LUGUANG ELECTRONIC |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 54A; Idm: 170A; 300W Mounting: THT Drain current: 54A On-state resistance: 45mΩ Type of transistor: N-MOSFET Case: TO247-4 Power dissipation: 300W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 170A Drain-source voltage: 650V |
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| LGE3M30065Q | LUGUANG ELECTRONIC |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 54A; Idm: 170A; 300W Mounting: THT Drain current: 54A On-state resistance: 45mΩ Type of transistor: N-MOSFET Case: TO247-4 Power dissipation: 300W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 170A Drain-source voltage: 650V кількість в упаковці: 1 шт |
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| LGE3M35065Q | LUGUANG ELECTRONIC |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 40A; Idm: 130A; 370W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 30nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...18V Pulsed drain current: 130A Mounting: THT Case: TO247-4 Drain-source voltage: 650V Drain current: 40A On-state resistance: 55mΩ Type of transistor: N-MOSFET Power dissipation: 370W |
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| LGE3M35065Q | LUGUANG ELECTRONIC |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 40A; Idm: 130A; 370W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 30nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...18V Pulsed drain current: 130A Mounting: THT Case: TO247-4 Drain-source voltage: 650V Drain current: 40A On-state resistance: 55mΩ Type of transistor: N-MOSFET Power dissipation: 370W кількість в упаковці: 1 шт |
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| LGE3M35120Q | LUGUANG ELECTRONIC | LGE3M35120Q THT N channel transistors |
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| LGE3M40065B | LUGUANG ELECTRONIC | LGE3M40065B THT N channel transistors |
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| LGE3M40065Q | LUGUANG ELECTRONIC |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 58A; Idm: 180A; 348W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 110.8nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 180A Mounting: THT Case: TO247-4 Drain-source voltage: 650V Drain current: 58A On-state resistance: 55mΩ Type of transistor: N-MOSFET Power dissipation: 348W |
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| LGE3M40065Q | LUGUANG ELECTRONIC |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 58A; Idm: 180A; 348W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 110.8nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 180A Mounting: THT Case: TO247-4 Drain-source voltage: 650V Drain current: 58A On-state resistance: 55mΩ Type of transistor: N-MOSFET Power dissipation: 348W кількість в упаковці: 1 шт |
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| LGE3M40120Q | LUGUANG ELECTRONIC | LGE3M40120Q THT N channel transistors |
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| LGE3M45170B | LUGUANG ELECTRONIC |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W Case: TO247-3 Mounting: THT Gate charge: 54nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 160A Drain-source voltage: 1.7kV Drain current: 48A On-state resistance: 90mΩ Type of transistor: N-MOSFET Power dissipation: 520W Polarisation: unipolar Kind of package: tube |
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| LGE3M45170B | LUGUANG ELECTRONIC |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W Case: TO247-3 Mounting: THT Gate charge: 54nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 160A Drain-source voltage: 1.7kV Drain current: 48A On-state resistance: 90mΩ Type of transistor: N-MOSFET Power dissipation: 520W Polarisation: unipolar Kind of package: tube кількість в упаковці: 1 шт |
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| LGE3M45170Q | LUGUANG ELECTRONIC |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W Case: TO247-4 Mounting: THT Features of semiconductor devices: Kelvin terminal Gate charge: 54nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 160A Drain-source voltage: 1.7kV Drain current: 48A On-state resistance: 90mΩ Type of transistor: N-MOSFET Power dissipation: 520W Polarisation: unipolar Kind of package: tube |
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| LGE3M45170Q | LUGUANG ELECTRONIC |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W Case: TO247-4 Mounting: THT Features of semiconductor devices: Kelvin terminal Gate charge: 54nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 160A Drain-source voltage: 1.7kV Drain current: 48A On-state resistance: 90mΩ Type of transistor: N-MOSFET Power dissipation: 520W Polarisation: unipolar Kind of package: tube кількість в упаковці: 1 шт |
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| LGE3M50120B | LUGUANG ELECTRONIC | LGE3M50120B THT N channel transistors |
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| LGE3M50120Q | LUGUANG ELECTRONIC | LGE3M50120Q THT N channel transistors |
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| LGE3M60065Q | LUGUANG ELECTRONIC |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 36A; Idm: 97A; 208W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 78nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...18V Pulsed drain current: 97A Mounting: THT Case: TO247-4 Drain-source voltage: 650V Drain current: 36A On-state resistance: 75mΩ Type of transistor: N-MOSFET Power dissipation: 208W |
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| LGE3M60065Q | LUGUANG ELECTRONIC |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 36A; Idm: 97A; 208W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 78nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...18V Pulsed drain current: 97A Mounting: THT Case: TO247-4 Drain-source voltage: 650V Drain current: 36A On-state resistance: 75mΩ Type of transistor: N-MOSFET Power dissipation: 208W кількість в упаковці: 1 шт |
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| LGE3M70120Q | LUGUANG ELECTRONIC |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 85A; 200W Drain-source voltage: 1.2kV Drain current: 27A On-state resistance: 0.122Ω Type of transistor: N-MOSFET Power dissipation: 200W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 69nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 85A Mounting: THT Case: TO247-4 |
товар відсутній |
||
| LGE3M70120Q | LUGUANG ELECTRONIC |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 85A; 200W Drain-source voltage: 1.2kV Drain current: 27A On-state resistance: 0.122Ω Type of transistor: N-MOSFET Power dissipation: 200W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 69nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 85A Mounting: THT Case: TO247-4 кількість в упаковці: 1 шт |
товар відсутній |
| LGE3D15065A |
|
Виробник: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 135A
Max. forward voltage: 1.7V
Leakage current: 10µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 135A
Max. forward voltage: 1.7V
Leakage current: 10µA
товар відсутній
| LGE3D15065A |
|
Виробник: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 135A
Max. forward voltage: 1.7V
Leakage current: 10µA
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 135A
Max. forward voltage: 1.7V
Leakage current: 10µA
кількість в упаковці: 1 шт
товар відсутній
| LGE3D20120A |
|
Виробник: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 160A
Max. forward voltage: 2.2V
Leakage current: 50µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 160A
Max. forward voltage: 2.2V
Leakage current: 50µA
товар відсутній
| LGE3D20120A |
|
Виробник: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 160A
Max. forward voltage: 2.2V
Leakage current: 50µA
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 160A
Max. forward voltage: 2.2V
Leakage current: 50µA
кількість в упаковці: 1 шт
товар відсутній
| LGE3D20120D |
|
Виробник: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 160A
Max. forward voltage: 2V
Leakage current: 30µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 160A
Max. forward voltage: 2V
Leakage current: 30µA
товар відсутній
| LGE3D20120D |
|
Виробник: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 160A
Max. forward voltage: 2V
Leakage current: 30µA
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 160A
Max. forward voltage: 2V
Leakage current: 30µA
кількість в упаковці: 1 шт
товар відсутній
| LGE3D20120H |
|
Виробник: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Max. load current: 100A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
Max. forward impulse current: 130A
Max. forward voltage: 2V
Leakage current: 50µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Max. load current: 100A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
Max. forward impulse current: 130A
Max. forward voltage: 2V
Leakage current: 50µA
товар відсутній
| LGE3D20120H |
|
Виробник: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Max. load current: 100A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
Max. forward impulse current: 130A
Max. forward voltage: 2V
Leakage current: 50µA
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Max. load current: 100A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
Max. forward impulse current: 130A
Max. forward voltage: 2V
Leakage current: 50µA
кількість в упаковці: 1 шт
товар відсутній
| LGE3D30120D |
|
Виробник: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 274A
Max. forward voltage: 2.2V
Leakage current: 20µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 274A
Max. forward voltage: 2.2V
Leakage current: 20µA
товар відсутній
| LGE3D30120D |
|
Виробник: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 274A
Max. forward voltage: 2.2V
Leakage current: 20µA
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 274A
Max. forward voltage: 2.2V
Leakage current: 20µA
кількість в упаковці: 1 шт
товар відсутній
| LGE3D30120H |
|
Виробник: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Max. load current: 190A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
Max. forward impulse current: 220A
Max. forward voltage: 1.95V
Leakage current: 0.1mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Max. load current: 190A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
Max. forward impulse current: 220A
Max. forward voltage: 1.95V
Leakage current: 0.1mA
товар відсутній
| LGE3D30120H |
|
Виробник: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Max. load current: 190A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
Max. forward impulse current: 220A
Max. forward voltage: 1.95V
Leakage current: 0.1mA
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Max. load current: 190A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
Max. forward impulse current: 220A
Max. forward voltage: 1.95V
Leakage current: 0.1mA
кількість в упаковці: 1 шт
товар відсутній
| LGE3D42090H |
|
Виробник: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 900V; 42A; TO247-2; tube
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO247-2
Max. off-state voltage: 900V
Max. load current: 200A
Max. forward voltage: 1.9V
Load current: 42A
Semiconductor structure: single diode
Max. forward impulse current: 230A
Leakage current: 0.16mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 900V; 42A; TO247-2; tube
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO247-2
Max. off-state voltage: 900V
Max. load current: 200A
Max. forward voltage: 1.9V
Load current: 42A
Semiconductor structure: single diode
Max. forward impulse current: 230A
Leakage current: 0.16mA
товар відсутній
| LGE3D42090H |
|
Виробник: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 900V; 42A; TO247-2; tube
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO247-2
Max. off-state voltage: 900V
Max. load current: 200A
Max. forward voltage: 1.9V
Load current: 42A
Semiconductor structure: single diode
Max. forward impulse current: 230A
Leakage current: 0.16mA
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 900V; 42A; TO247-2; tube
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO247-2
Max. off-state voltage: 900V
Max. load current: 200A
Max. forward voltage: 1.9V
Load current: 42A
Semiconductor structure: single diode
Max. forward impulse current: 230A
Leakage current: 0.16mA
кількість в упаковці: 1 шт
товар відсутній
| LGE3M160120B |
|
Виробник: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 14A; Idm: 48A; 134W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 14A
Pulsed drain current: 48A
Power dissipation: 134W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 0.285Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 14A; Idm: 48A; 134W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 14A
Pulsed drain current: 48A
Power dissipation: 134W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 0.285Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| LGE3M160120B |
|
Виробник: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 14A; Idm: 48A; 134W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 14A
Pulsed drain current: 48A
Power dissipation: 134W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 0.285Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 14A; Idm: 48A; 134W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 14A
Pulsed drain current: 48A
Power dissipation: 134W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 0.285Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| LGE3M160120E |
|
Виробник: LUGUANG ELECTRONIC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 11A; Idm: 38A; 127W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 11A
Pulsed drain current: 38A
Power dissipation: 127W
Case: D2PAK
Gate-source voltage: -5...20V
On-state resistance: 0.285Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 11A; Idm: 38A; 127W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 11A
Pulsed drain current: 38A
Power dissipation: 127W
Case: D2PAK
Gate-source voltage: -5...20V
On-state resistance: 0.285Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| LGE3M160120E |
|
Виробник: LUGUANG ELECTRONIC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 11A; Idm: 38A; 127W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 11A
Pulsed drain current: 38A
Power dissipation: 127W
Case: D2PAK
Gate-source voltage: -5...20V
On-state resistance: 0.285Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 11A; Idm: 38A; 127W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 11A
Pulsed drain current: 38A
Power dissipation: 127W
Case: D2PAK
Gate-source voltage: -5...20V
On-state resistance: 0.285Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| LGE3M18120Q |
|
Виробник: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 74A; Idm: 220A; 428W
Case: TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 235nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 220A
Drain-source voltage: 1.2kV
Drain current: 74A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
Power dissipation: 428W
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 74A; Idm: 220A; 428W
Case: TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 235nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 220A
Drain-source voltage: 1.2kV
Drain current: 74A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
Power dissipation: 428W
Polarisation: unipolar
товар відсутній
| LGE3M18120Q |
|
Виробник: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 74A; Idm: 220A; 428W
Case: TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 235nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 220A
Drain-source voltage: 1.2kV
Drain current: 74A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
Power dissipation: 428W
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 74A; Idm: 220A; 428W
Case: TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 235nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 220A
Drain-source voltage: 1.2kV
Drain current: 74A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
Power dissipation: 428W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
| LGE3M1K170B |
|
Виробник: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.5A; Idm: 6A; 69W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 3.5A
Pulsed drain current: 6A
Power dissipation: 69W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 21.8nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.5A; Idm: 6A; 69W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 3.5A
Pulsed drain current: 6A
Power dissipation: 69W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 21.8nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| LGE3M1K170B |
|
Виробник: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.5A; Idm: 6A; 69W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 3.5A
Pulsed drain current: 6A
Power dissipation: 69W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 21.8nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.5A; Idm: 6A; 69W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 3.5A
Pulsed drain current: 6A
Power dissipation: 69W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 21.8nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| LGE3M20120Q |
|
Виробник: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; 428W; TO247-4
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 254nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Mounting: THT
Case: TO247-4
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Power dissipation: 428W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; 428W; TO247-4
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 254nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Mounting: THT
Case: TO247-4
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Power dissipation: 428W
товар відсутній
| LGE3M20120Q |
|
Виробник: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; 428W; TO247-4
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 254nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Mounting: THT
Case: TO247-4
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Power dissipation: 428W
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; 428W; TO247-4
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 254nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Mounting: THT
Case: TO247-4
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Power dissipation: 428W
кількість в упаковці: 1 шт
товар відсутній
| LGE3M28065Q |
|
Виробник: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 67A; Idm: 211A; 326W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 163nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 211A
Mounting: THT
Case: TO247-4
Drain-source voltage: 650V
Drain current: 67A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Power dissipation: 326W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 67A; Idm: 211A; 326W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 163nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 211A
Mounting: THT
Case: TO247-4
Drain-source voltage: 650V
Drain current: 67A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Power dissipation: 326W
товар відсутній
| LGE3M28065Q |
|
Виробник: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 67A; Idm: 211A; 326W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 163nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 211A
Mounting: THT
Case: TO247-4
Drain-source voltage: 650V
Drain current: 67A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Power dissipation: 326W
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 67A; Idm: 211A; 326W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 163nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 211A
Mounting: THT
Case: TO247-4
Drain-source voltage: 650V
Drain current: 67A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Power dissipation: 326W
кількість в упаковці: 1 шт
товар відсутній
| LGE3M30065B |
|
Виробник: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 64A; Idm: 212A; 326W
Mounting: THT
Drain current: 64A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET
Case: TO247-3
Power dissipation: 326W
Polarisation: unipolar
Kind of package: tube
Gate charge: 147nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 212A
Drain-source voltage: 650V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 64A; Idm: 212A; 326W
Mounting: THT
Drain current: 64A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET
Case: TO247-3
Power dissipation: 326W
Polarisation: unipolar
Kind of package: tube
Gate charge: 147nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 212A
Drain-source voltage: 650V
товар відсутній
| LGE3M30065B |
|
Виробник: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 64A; Idm: 212A; 326W
Mounting: THT
Drain current: 64A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET
Case: TO247-3
Power dissipation: 326W
Polarisation: unipolar
Kind of package: tube
Gate charge: 147nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 212A
Drain-source voltage: 650V
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 64A; Idm: 212A; 326W
Mounting: THT
Drain current: 64A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET
Case: TO247-3
Power dissipation: 326W
Polarisation: unipolar
Kind of package: tube
Gate charge: 147nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 212A
Drain-source voltage: 650V
кількість в упаковці: 1 шт
товар відсутній
| LGE3M30065Q |
|
Виробник: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 54A; Idm: 170A; 300W
Mounting: THT
Drain current: 54A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Case: TO247-4
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 170A
Drain-source voltage: 650V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 54A; Idm: 170A; 300W
Mounting: THT
Drain current: 54A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Case: TO247-4
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 170A
Drain-source voltage: 650V
товар відсутній
| LGE3M30065Q |
|
Виробник: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 54A; Idm: 170A; 300W
Mounting: THT
Drain current: 54A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Case: TO247-4
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 170A
Drain-source voltage: 650V
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 54A; Idm: 170A; 300W
Mounting: THT
Drain current: 54A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Case: TO247-4
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 170A
Drain-source voltage: 650V
кількість в упаковці: 1 шт
товар відсутній
| LGE3M35065Q |
|
Виробник: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 40A; Idm: 130A; 370W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 30nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...18V
Pulsed drain current: 130A
Mounting: THT
Case: TO247-4
Drain-source voltage: 650V
Drain current: 40A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET
Power dissipation: 370W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 40A; Idm: 130A; 370W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 30nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...18V
Pulsed drain current: 130A
Mounting: THT
Case: TO247-4
Drain-source voltage: 650V
Drain current: 40A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET
Power dissipation: 370W
товар відсутній
| LGE3M35065Q |
|
Виробник: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 40A; Idm: 130A; 370W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 30nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...18V
Pulsed drain current: 130A
Mounting: THT
Case: TO247-4
Drain-source voltage: 650V
Drain current: 40A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET
Power dissipation: 370W
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 40A; Idm: 130A; 370W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 30nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...18V
Pulsed drain current: 130A
Mounting: THT
Case: TO247-4
Drain-source voltage: 650V
Drain current: 40A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET
Power dissipation: 370W
кількість в упаковці: 1 шт
товар відсутній
| LGE3M40065Q |
|
Виробник: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 58A; Idm: 180A; 348W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 110.8nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 180A
Mounting: THT
Case: TO247-4
Drain-source voltage: 650V
Drain current: 58A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET
Power dissipation: 348W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 58A; Idm: 180A; 348W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 110.8nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 180A
Mounting: THT
Case: TO247-4
Drain-source voltage: 650V
Drain current: 58A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET
Power dissipation: 348W
товар відсутній
| LGE3M40065Q |
|
Виробник: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 58A; Idm: 180A; 348W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 110.8nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 180A
Mounting: THT
Case: TO247-4
Drain-source voltage: 650V
Drain current: 58A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET
Power dissipation: 348W
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 58A; Idm: 180A; 348W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 110.8nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 180A
Mounting: THT
Case: TO247-4
Drain-source voltage: 650V
Drain current: 58A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET
Power dissipation: 348W
кількість в упаковці: 1 шт
товар відсутній
| LGE3M45170B |
|
Виробник: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W
Case: TO247-3
Mounting: THT
Gate charge: 54nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 160A
Drain-source voltage: 1.7kV
Drain current: 48A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 520W
Polarisation: unipolar
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W
Case: TO247-3
Mounting: THT
Gate charge: 54nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 160A
Drain-source voltage: 1.7kV
Drain current: 48A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 520W
Polarisation: unipolar
Kind of package: tube
товар відсутній
| LGE3M45170B |
|
Виробник: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W
Case: TO247-3
Mounting: THT
Gate charge: 54nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 160A
Drain-source voltage: 1.7kV
Drain current: 48A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 520W
Polarisation: unipolar
Kind of package: tube
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W
Case: TO247-3
Mounting: THT
Gate charge: 54nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 160A
Drain-source voltage: 1.7kV
Drain current: 48A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 520W
Polarisation: unipolar
Kind of package: tube
кількість в упаковці: 1 шт
товар відсутній
| LGE3M45170Q |
|
Виробник: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W
Case: TO247-4
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 54nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 160A
Drain-source voltage: 1.7kV
Drain current: 48A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 520W
Polarisation: unipolar
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W
Case: TO247-4
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 54nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 160A
Drain-source voltage: 1.7kV
Drain current: 48A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 520W
Polarisation: unipolar
Kind of package: tube
товар відсутній
| LGE3M45170Q |
|
Виробник: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W
Case: TO247-4
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 54nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 160A
Drain-source voltage: 1.7kV
Drain current: 48A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 520W
Polarisation: unipolar
Kind of package: tube
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W
Case: TO247-4
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 54nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 160A
Drain-source voltage: 1.7kV
Drain current: 48A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 520W
Polarisation: unipolar
Kind of package: tube
кількість в упаковці: 1 шт
товар відсутній
| LGE3M60065Q |
|
Виробник: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 36A; Idm: 97A; 208W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 78nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 97A
Mounting: THT
Case: TO247-4
Drain-source voltage: 650V
Drain current: 36A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 208W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 36A; Idm: 97A; 208W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 78nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 97A
Mounting: THT
Case: TO247-4
Drain-source voltage: 650V
Drain current: 36A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 208W
товар відсутній
| LGE3M60065Q |
|
Виробник: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 36A; Idm: 97A; 208W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 78nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 97A
Mounting: THT
Case: TO247-4
Drain-source voltage: 650V
Drain current: 36A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 208W
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 36A; Idm: 97A; 208W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 78nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 97A
Mounting: THT
Case: TO247-4
Drain-source voltage: 650V
Drain current: 36A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 208W
кількість в упаковці: 1 шт
товар відсутній
| LGE3M70120Q |
|
Виробник: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 85A; 200W
Drain-source voltage: 1.2kV
Drain current: 27A
On-state resistance: 0.122Ω
Type of transistor: N-MOSFET
Power dissipation: 200W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 69nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 85A
Mounting: THT
Case: TO247-4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 85A; 200W
Drain-source voltage: 1.2kV
Drain current: 27A
On-state resistance: 0.122Ω
Type of transistor: N-MOSFET
Power dissipation: 200W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 69nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 85A
Mounting: THT
Case: TO247-4
товар відсутній
| LGE3M70120Q |
|
Виробник: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 85A; 200W
Drain-source voltage: 1.2kV
Drain current: 27A
On-state resistance: 0.122Ω
Type of transistor: N-MOSFET
Power dissipation: 200W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 69nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 85A
Mounting: THT
Case: TO247-4
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 85A; 200W
Drain-source voltage: 1.2kV
Drain current: 27A
On-state resistance: 0.122Ω
Type of transistor: N-MOSFET
Power dissipation: 200W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 69nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 85A
Mounting: THT
Case: TO247-4
кількість в упаковці: 1 шт
товар відсутній