Продукція > MGT BRIGHTEK > Всі товари виробника MGT BRIGHTEK (7) > Сторінка 1 з 1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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AB37S | MGT BRIGHTEK |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: MOSFET; SOP4; 37; 60V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: MOSFET Case: SOP4 Turn-on time: 0.2ms Turn-off time: 50µs Manufacturer series: 37 Operating voltage: 60V |
на замовлення 38 шт: термін постачання 14-30 дні (днів) |
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| GPT65C0YME | MGT BRIGHTEK |
Category: SMD N channel transistorsDescription: Transistor: N-JFET / N-MOSFET; GaN; unipolar; HEMT,cascode; 650V Technology: GaN Case: DFN8080 Mounting: SMD Kind of package: tape On-state resistance: 245mΩ Pulsed drain current: 31A Power dissipation: 38W Gate charge: 22nC Polarisation: unipolar Drain current: 6A Drain-source voltage: 650V Kind of transistor: cascode; HEMT Type of transistor: N-JFET / N-MOSFET Gate-source voltage: ±20V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
| GPT65Z4YMR | MGT BRIGHTEK |
Category: SMD N channel transistorsDescription: Transistor: N-JFET / N-MOSFET; GaN; unipolar; HEMT,cascode; 650V Technology: GaN Case: DFN8080 Mounting: SMD Kind of package: tape On-state resistance: 0.13Ω Pulsed drain current: 80A Power dissipation: 67.5W Gate charge: 38nC Polarisation: unipolar Drain current: 11.5A Drain-source voltage: 650V Kind of transistor: cascode; HEMT Type of transistor: N-JFET / N-MOSFET Gate-source voltage: ±20V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
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UT8005B | MGT BRIGHTEK |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; ESD; 6V; 12.5A; bidirectional; 0201; reel,tape Application: automotive industry Case - mm: 0603 Mounting: SMD Breakdown voltage: 6V Max. forward impulse current: 12.5A Version: ESD Max. off-state voltage: 5V Kind of package: reel; tape Semiconductor structure: bidirectional Leakage current: 1µA Capacitance: 15pF Type of diode: TVS Case - inch: 0201 |
на замовлення 11706 шт: термін постачання 14-30 дні (днів) |
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UT817ZB | MGT BRIGHTEK |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; ESD; 6V; 4A; bidirectional; 0201; reel,tape Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 6V Max. forward impulse current: 4A Semiconductor structure: bidirectional Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Version: ESD Capacitance: 0.18pF Case - inch: 0201 Case - mm: 0603 |
на замовлення 11100 шт: термін постачання 14-30 дні (днів) |
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UT8413A | MGT BRIGHTEK |
Category: Protection diodes - arraysDescription: Diode: TVS array; 5÷8.5V; 5A; ESD; DFN2510-10; Ch: 4; reel,tape Type of diode: TVS array Max. off-state voltage: 3.3V Breakdown voltage: 5...8.5V Max. forward impulse current: 5A Case: DFN2510-10 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Version: ESD Application: automotive industry Capacitance: 0.45pF Number of channels: 4 |
на замовлення 2890 шт: термін постачання 14-30 дні (днів) |
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UT848ZA | MGT BRIGHTEK |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.5÷16V; 6A; ESD; DFN2510-10; Ch: 4; reel,tape Type of diode: TVS array Max. off-state voltage: 3.3V Breakdown voltage: 6.5...16V Max. forward impulse current: 6A Case: DFN2510-10 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Version: ESD Application: automotive industry Capacitance: 0.28pF Number of channels: 4 |
на замовлення 2665 шт: термін постачання 14-30 дні (днів) |
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| AB37S |
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Виробник: MGT BRIGHTEK
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; SOP4; 37; 60V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: MOSFET
Case: SOP4
Turn-on time: 0.2ms
Turn-off time: 50µs
Manufacturer series: 37
Operating voltage: 60V
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; SOP4; 37; 60V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: MOSFET
Case: SOP4
Turn-on time: 0.2ms
Turn-off time: 50µs
Manufacturer series: 37
Operating voltage: 60V
на замовлення 38 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 119.09 грн |
| 5+ | 103.99 грн |
| 25+ | 97.15 грн |
| GPT65C0YME |
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Виробник: MGT BRIGHTEK
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; GaN; unipolar; HEMT,cascode; 650V
Technology: GaN
Case: DFN8080
Mounting: SMD
Kind of package: tape
On-state resistance: 245mΩ
Pulsed drain current: 31A
Power dissipation: 38W
Gate charge: 22nC
Polarisation: unipolar
Drain current: 6A
Drain-source voltage: 650V
Kind of transistor: cascode; HEMT
Type of transistor: N-JFET / N-MOSFET
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; GaN; unipolar; HEMT,cascode; 650V
Technology: GaN
Case: DFN8080
Mounting: SMD
Kind of package: tape
On-state resistance: 245mΩ
Pulsed drain current: 31A
Power dissipation: 38W
Gate charge: 22nC
Polarisation: unipolar
Drain current: 6A
Drain-source voltage: 650V
Kind of transistor: cascode; HEMT
Type of transistor: N-JFET / N-MOSFET
Gate-source voltage: ±20V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| GPT65Z4YMR |
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Виробник: MGT BRIGHTEK
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; GaN; unipolar; HEMT,cascode; 650V
Technology: GaN
Case: DFN8080
Mounting: SMD
Kind of package: tape
On-state resistance: 0.13Ω
Pulsed drain current: 80A
Power dissipation: 67.5W
Gate charge: 38nC
Polarisation: unipolar
Drain current: 11.5A
Drain-source voltage: 650V
Kind of transistor: cascode; HEMT
Type of transistor: N-JFET / N-MOSFET
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; GaN; unipolar; HEMT,cascode; 650V
Technology: GaN
Case: DFN8080
Mounting: SMD
Kind of package: tape
On-state resistance: 0.13Ω
Pulsed drain current: 80A
Power dissipation: 67.5W
Gate charge: 38nC
Polarisation: unipolar
Drain current: 11.5A
Drain-source voltage: 650V
Kind of transistor: cascode; HEMT
Type of transistor: N-JFET / N-MOSFET
Gate-source voltage: ±20V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| UT8005B |
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Виробник: MGT BRIGHTEK
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6V; 12.5A; bidirectional; 0201; reel,tape
Application: automotive industry
Case - mm: 0603
Mounting: SMD
Breakdown voltage: 6V
Max. forward impulse current: 12.5A
Version: ESD
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Leakage current: 1µA
Capacitance: 15pF
Type of diode: TVS
Case - inch: 0201
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6V; 12.5A; bidirectional; 0201; reel,tape
Application: automotive industry
Case - mm: 0603
Mounting: SMD
Breakdown voltage: 6V
Max. forward impulse current: 12.5A
Version: ESD
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Leakage current: 1µA
Capacitance: 15pF
Type of diode: TVS
Case - inch: 0201
на замовлення 11706 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 125+ | 3.78 грн |
| 275+ | 3.64 грн |
| 500+ | 3.63 грн |
| 725+ | 3.44 грн |
| 3000+ | 3.34 грн |
| 10000+ | 3.32 грн |
| UT817ZB |
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Виробник: MGT BRIGHTEK
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6V; 4A; bidirectional; 0201; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 4A
Semiconductor structure: bidirectional
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Version: ESD
Capacitance: 0.18pF
Case - inch: 0201
Case - mm: 0603
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6V; 4A; bidirectional; 0201; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 4A
Semiconductor structure: bidirectional
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Version: ESD
Capacitance: 0.18pF
Case - inch: 0201
Case - mm: 0603
на замовлення 11100 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 8.98 грн |
| 100+ | 8.01 грн |
| 125+ | 7.59 грн |
| 350+ | 7.18 грн |
| 3000+ | 7.01 грн |
| 10000+ | 6.93 грн |
| UT8413A |
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Виробник: MGT BRIGHTEK
Category: Protection diodes - arrays
Description: Diode: TVS array; 5÷8.5V; 5A; ESD; DFN2510-10; Ch: 4; reel,tape
Type of diode: TVS array
Max. off-state voltage: 3.3V
Breakdown voltage: 5...8.5V
Max. forward impulse current: 5A
Case: DFN2510-10
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Version: ESD
Application: automotive industry
Capacitance: 0.45pF
Number of channels: 4
Category: Protection diodes - arrays
Description: Diode: TVS array; 5÷8.5V; 5A; ESD; DFN2510-10; Ch: 4; reel,tape
Type of diode: TVS array
Max. off-state voltage: 3.3V
Breakdown voltage: 5...8.5V
Max. forward impulse current: 5A
Case: DFN2510-10
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Version: ESD
Application: automotive industry
Capacitance: 0.45pF
Number of channels: 4
на замовлення 2890 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 60+ | 7.64 грн |
| 65+ | 6.77 грн |
| 100+ | 6.68 грн |
| 145+ | 6.60 грн |
| 395+ | 6.19 грн |
| 1000+ | 6.02 грн |
| 2500+ | 5.94 грн |
| UT848ZA |
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Виробник: MGT BRIGHTEK
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5÷16V; 6A; ESD; DFN2510-10; Ch: 4; reel,tape
Type of diode: TVS array
Max. off-state voltage: 3.3V
Breakdown voltage: 6.5...16V
Max. forward impulse current: 6A
Case: DFN2510-10
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Version: ESD
Application: automotive industry
Capacitance: 0.28pF
Number of channels: 4
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5÷16V; 6A; ESD; DFN2510-10; Ch: 4; reel,tape
Type of diode: TVS array
Max. off-state voltage: 3.3V
Breakdown voltage: 6.5...16V
Max. forward impulse current: 6A
Case: DFN2510-10
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Version: ESD
Application: automotive industry
Capacitance: 0.28pF
Number of channels: 4
на замовлення 2665 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 12.98 грн |
| 45+ | 10.07 грн |
| 100+ | 9.33 грн |
| 280+ | 8.75 грн |
| 500+ | 8.50 грн |







