Продукція > MGT BRIGHTEK > Всі товари виробника MGT BRIGHTEK (6) > Сторінка 1 з 1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GPT65C0YME | MGT BRIGHTEK |
 Category: SMD N channel transistorsDescription: Transistor: N-JFET / N-MOSFET; GaN; unipolar; HEMT,cascode; 650V Type of transistor: N-JFET / N-MOSFET Technology: GaN Drain-source voltage: 650V Drain current: 6A Power dissipation: 38W Gate-source voltage: ±20V On-state resistance: 245mΩ Mounting: SMD Gate charge: 22nC Pulsed drain current: 31A Polarisation: unipolar Kind of transistor: cascode; HEMT Kind of package: tape Case: DFN8080 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||
| GPT65Z4YMR | MGT BRIGHTEK |
Category: SMD N channel transistors Description: Transistor: N-JFET / N-MOSFET; GaN; unipolar; HEMT,cascode; 650V Type of transistor: N-JFET / N-MOSFET Technology: GaN Drain-source voltage: 650V Drain current: 11.5A Power dissipation: 67.5W Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 38nC Pulsed drain current: 80A Polarisation: unipolar Kind of transistor: cascode; HEMT Kind of package: tape Case: DFN8080 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||
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UT8005B | MGT BRIGHTEK |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; ESD; 6V; 12.5A; bidirectional; 0201; reel,tape Capacitance: 15pF Mounting: SMD Case - inch: 0201 Case - mm: 0603 Kind of package: reel; tape Semiconductor structure: bidirectional Leakage current: 1µA Type of diode: TVS Breakdown voltage: 6V Max. forward impulse current: 12.5A Version: ESD Application: automotive industry Max. off-state voltage: 5V |
на замовлення 11756 шт: термін постачання 14-30 дні (днів) |
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UT817ZB | MGT BRIGHTEK |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; ESD; 6V; 4A; bidirectional; 0201; reel,tape Type of diode: TVS Version: ESD Max. off-state voltage: 5V Breakdown voltage: 6V Max. forward impulse current: 4A Semiconductor structure: bidirectional Case - inch: 0201 Case - mm: 0603 Mounting: SMD Leakage current: 1µA Capacitance: 0.18pF Kind of package: reel; tape |
на замовлення 11125 шт: термін постачання 14-30 дні (днів) |
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UT8413A | MGT BRIGHTEK |
Category: Protection diodes - arrays Description: Diode: TVS array; 5÷8.5V; 5A; ESD; DFN2510-10; Ch: 4; reel,tape Type of diode: TVS array Breakdown voltage: 5...8.5V Max. forward impulse current: 5A Version: ESD Mounting: SMD Case: DFN2510-10 Max. off-state voltage: 3.3V Leakage current: 1µA Number of channels: 4 Capacitance: 0.45pF Application: automotive industry Kind of package: reel; tape |
на замовлення 2890 шт: термін постачання 14-30 дні (днів) |
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UT848ZA | MGT BRIGHTEK |
Category: Protection diodes - arrays Description: Diode: TVS array; 6.5÷16V; 6A; ESD; DFN2510-10; Ch: 4; reel,tape Type of diode: TVS array Breakdown voltage: 6.5...16V Max. forward impulse current: 6A Version: ESD Mounting: SMD Case: DFN2510-10 Max. off-state voltage: 3.3V Leakage current: 1µA Number of channels: 4 Capacitance: 0.28pF Application: automotive industry Kind of package: reel; tape |
на замовлення 2665 шт: термін постачання 14-30 дні (днів) |
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| GPT65C0YME |
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Виробник: MGT BRIGHTEK
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; GaN; unipolar; HEMT,cascode; 650V
Type of transistor: N-JFET / N-MOSFET
Technology: GaN
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 38W
Gate-source voltage: ±20V
On-state resistance: 245mΩ
Mounting: SMD
Gate charge: 22nC
Pulsed drain current: 31A
Polarisation: unipolar
Kind of transistor: cascode; HEMT
Kind of package: tape
Case: DFN8080
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; GaN; unipolar; HEMT,cascode; 650V
Type of transistor: N-JFET / N-MOSFET
Technology: GaN
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 38W
Gate-source voltage: ±20V
On-state resistance: 245mΩ
Mounting: SMD
Gate charge: 22nC
Pulsed drain current: 31A
Polarisation: unipolar
Kind of transistor: cascode; HEMT
Kind of package: tape
Case: DFN8080
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| GPT65Z4YMR |
|
Виробник: MGT BRIGHTEK
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; GaN; unipolar; HEMT,cascode; 650V
Type of transistor: N-JFET / N-MOSFET
Technology: GaN
Drain-source voltage: 650V
Drain current: 11.5A
Power dissipation: 67.5W
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 38nC
Pulsed drain current: 80A
Polarisation: unipolar
Kind of transistor: cascode; HEMT
Kind of package: tape
Case: DFN8080
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; GaN; unipolar; HEMT,cascode; 650V
Type of transistor: N-JFET / N-MOSFET
Technology: GaN
Drain-source voltage: 650V
Drain current: 11.5A
Power dissipation: 67.5W
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 38nC
Pulsed drain current: 80A
Polarisation: unipolar
Kind of transistor: cascode; HEMT
Kind of package: tape
Case: DFN8080
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| UT8005B |
|
Виробник: MGT BRIGHTEK
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6V; 12.5A; bidirectional; 0201; reel,tape
Capacitance: 15pF
Mounting: SMD
Case - inch: 0201
Case - mm: 0603
Kind of package: reel; tape
Semiconductor structure: bidirectional
Leakage current: 1µA
Type of diode: TVS
Breakdown voltage: 6V
Max. forward impulse current: 12.5A
Version: ESD
Application: automotive industry
Max. off-state voltage: 5V
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6V; 12.5A; bidirectional; 0201; reel,tape
Capacitance: 15pF
Mounting: SMD
Case - inch: 0201
Case - mm: 0603
Kind of package: reel; tape
Semiconductor structure: bidirectional
Leakage current: 1µA
Type of diode: TVS
Breakdown voltage: 6V
Max. forward impulse current: 12.5A
Version: ESD
Application: automotive industry
Max. off-state voltage: 5V
на замовлення 11756 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 125+ | 3.45 грн |
| 500+ | 3.31 грн |
| 1000+ | 3.28 грн |
| UT817ZB |
|
Виробник: MGT BRIGHTEK
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6V; 4A; bidirectional; 0201; reel,tape
Type of diode: TVS
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 4A
Semiconductor structure: bidirectional
Case - inch: 0201
Case - mm: 0603
Mounting: SMD
Leakage current: 1µA
Capacitance: 0.18pF
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6V; 4A; bidirectional; 0201; reel,tape
Type of diode: TVS
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 4A
Semiconductor structure: bidirectional
Case - inch: 0201
Case - mm: 0603
Mounting: SMD
Leakage current: 1µA
Capacitance: 0.18pF
Kind of package: reel; tape
на замовлення 11125 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 75+ | 8.22 грн |
| 100+ | 7.30 грн |
| 500+ | 7.04 грн |
| 1000+ | 6.88 грн |
| UT8413A |
|
Виробник: MGT BRIGHTEK
Category: Protection diodes - arrays
Description: Diode: TVS array; 5÷8.5V; 5A; ESD; DFN2510-10; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 5...8.5V
Max. forward impulse current: 5A
Version: ESD
Mounting: SMD
Case: DFN2510-10
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 4
Capacitance: 0.45pF
Application: automotive industry
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 5÷8.5V; 5A; ESD; DFN2510-10; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 5...8.5V
Max. forward impulse current: 5A
Version: ESD
Mounting: SMD
Case: DFN2510-10
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 4
Capacitance: 0.45pF
Application: automotive industry
Kind of package: reel; tape
на замовлення 2890 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 65+ | 6.54 грн |
| 100+ | 6.46 грн |
| 500+ | 6.12 грн |
| 1000+ | 5.95 грн |
| UT848ZA |
|
Виробник: MGT BRIGHTEK
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5÷16V; 6A; ESD; DFN2510-10; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.5...16V
Max. forward impulse current: 6A
Version: ESD
Mounting: SMD
Case: DFN2510-10
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 4
Capacitance: 0.28pF
Application: automotive industry
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5÷16V; 6A; ESD; DFN2510-10; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.5...16V
Max. forward impulse current: 6A
Version: ESD
Mounting: SMD
Case: DFN2510-10
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 4
Capacitance: 0.28pF
Application: automotive industry
Kind of package: reel; tape
на замовлення 2665 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 12.46 грн |
| 45+ | 9.73 грн |
| 100+ | 9.06 грн |
| 500+ | 8.81 грн |