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2SD1499-P-BP 2SD1499-P-BP Micro Commercial Co 2SD1499-P.pdf Description: TRANS NPN 100V 5A TO220F
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KBJL408G-BP Micro Commercial Co Description: DIODE BRIDGE KBJL
Packaging: Bulk
Package / Case: 4-SIP, KBJL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJL
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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GBJA10005-BP Micro Commercial Co Description: DIODE BRIDGE 10A JA
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KBJA10005-BP Micro Commercial Co Description: DIODE BRIDGE 10A JB
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HER301G-AP HER301G-AP Micro Commercial Co HER301G~HER308G(DO-201AD).pdf Description: DIODE GEN PURP 50V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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BAS40DW-06-TP BAS40DW-06-TP Micro Commercial Co BAS40TW_DW-04_DW-05_DW-06_BRW(SOT-363).PDF Description: DIODE ARR SCHOT 40V 200MA SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 2 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-363
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
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GBJ1502-BP GBJ1502-BP Micro Commercial Co GBJ15005~GBJ1510(GBJ).pdf Description: BRIDGE RECT 1PHASE 200V 15A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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1N5396GP-AP 1N5396GP-AP Micro Commercial Co 1N5391GP~1N5399GP(DO-15).pdf Description: DIODE GEN PURP 500V 1.5A DO15
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 500 V
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1N5396GP-TP 1N5396GP-TP Micro Commercial Co 1N5391GP~1N5399GP(DO-15).pdf Description: DIODE GEN PURP 500V 1.5A DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 500 V
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SIL05N06-TP SIL05N06-TP Micro Commercial Co SIL05N06(SOT23-6L).pdf Description: MOSFET N-CH 60V 5A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Power Dissipation (Max): 1.7W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 30 V
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SIL05N06-TP SIL05N06-TP Micro Commercial Co SIL05N06(SOT23-6L).pdf Description: MOSFET N-CH 60V 5A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Power Dissipation (Max): 1.7W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 30 V
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M8550-B-AP M8550-B-AP Micro Commercial Co Description: TRANS PNP 25V 0.8A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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LLDB4-TP Micro Commercial Co LLDB4_DS.pdf Description: DIAC BIDIRECTIONAL MINIMELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Operating Temperature: -40°C ~ 110°C (TJ)
Voltage - Breakover: 35 ~ 45V
Current - Breakover: 100 µA
Supplier Device Package: Mini MELF
Current - Peak Output: 2 A
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FR1K-TP Micro Commercial Co FR10A-FR10M.pdf Description: DIODE GEN PURP 800V 1A DO214AA
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FR1K-LTP FR1K-LTP Micro Commercial Co FR1A-L-FR1M-L(DO-214AA).pdf Description: DIODE 800V 1A SMB DO214AA
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MMXZ5245B-TP MMXZ5245B-TP Micro Commercial Co MMXZ5223B-MMXZ5259B(SOD-323).pdf Description: DIODE ZENER 15V 200MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
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MMXZ5245B-TP MMXZ5245B-TP Micro Commercial Co MMXZ5223B-MMXZ5259B(SOD-323).pdf Description: DIODE ZENER 15V 200MW SOD323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
на замовлення 2112 шт:
термін постачання 21-31 дні (днів)
22+15.08 грн
29+10.63 грн
100+5.76 грн
500+4.25 грн
1000+2.95 грн
Мінімальне замовлення: 22
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SI5618-TP SI5618-TP Micro Commercial Co SI5618(SOT-23).pdf Description: MOSFET P-CH 60V 1.9A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 10V
Power Dissipation (Max): 830mW
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+7.33 грн
6000+6.76 грн
Мінімальне замовлення: 3000
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SI5618-TP SI5618-TP Micro Commercial Co SI5618(SOT-23).pdf Description: MOSFET P-CH 60V 1.9A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 10V
Power Dissipation (Max): 830mW
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V
на замовлення 7542 шт:
термін постачання 21-31 дні (днів)
12+26.99 грн
16+20.26 грн
100+12.18 грн
500+10.58 грн
1000+7.19 грн
Мінімальне замовлення: 12
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MUR30120B-BP MUR30120B-BP Micro Commercial Co MUR30120B(TO-247AD).pdf Description: DIODE STANDARD 1200V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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MMSZ5261B-TP MMSZ5261B-TP Micro Commercial Co MMSZ5221-MMSZ5267(SOD123)-J.pdf Description: DIODE ZENER 500MW SOD-123
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P6KE62A-TP P6KE62A-TP Micro Commercial Co P6KE6.8(A)-P6KE600(A)(DO-15).pdf Description: TVS DIODE 53VWM 85VC DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.1A
Voltage - Reverse Standoff (Typ): 53V
Supplier Device Package: DO-15
Unidirectional Channels: 1
Voltage - Breakdown (Min): 58.9V
Voltage - Clamping (Max) @ Ipp: 85V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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P6KE62A-TP P6KE62A-TP Micro Commercial Co P6KE6.8(A)-P6KE600(A)(DO-15).pdf Description: TVS DIODE 53VWM 85VC DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.1A
Voltage - Reverse Standoff (Typ): 53V
Supplier Device Package: DO-15
Unidirectional Channels: 1
Voltage - Breakdown (Min): 58.9V
Voltage - Clamping (Max) @ Ipp: 85V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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DL5251B-TP DL5251B-TP Micro Commercial Co DL5221B-DL5267B%28Minimelf%29.pdf Description: DIODE ZENER 22V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 29 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
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DL5251B-TP DL5251B-TP Micro Commercial Co DL5221B-DL5267B%28Minimelf%29.pdf Description: DIODE ZENER 22V 500MW MINI MELF
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 29 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
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DL5237B-TP DL5237B-TP Micro Commercial Co DL5221B-DL5267B%28Minimelf%29.pdf Description: DIODE ZENER 8.2V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
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DL5237B-TP DL5237B-TP Micro Commercial Co DL5221B-DL5267B%28Minimelf%29.pdf Description: DIODE ZENER 8.2V 500MW MINI MELF
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
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DL5256B-TP DL5256B-TP Micro Commercial Co DL5221B-DL5267B%28Minimelf%29.pdf Description: DIODE ZENER 30V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
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DL5256B-TP DL5256B-TP Micro Commercial Co DL5221B-DL5267B%28Minimelf%29.pdf Description: DIODE ZENER 30V 500MW MINI MELF
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
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BZX84C47-TP BZX84C47-TP Micro Commercial Co BZX84C(B)2V4~BZX84C(B)75(SOT-23).pdf Description: DIODE ZENER 47V 350MW SOT23
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BZX84C47-TP BZX84C47-TP Micro Commercial Co BZX84C(B)2V4~BZX84C(B)75(SOT-23).pdf Description: DIODE ZENER 47V 350MW SOT23
на замовлення 2963 шт:
термін постачання 21-31 дні (днів)
20+15.88 грн
25+12.46 грн
100+6.59 грн
500+4.07 грн
1000+2.77 грн
Мінімальне замовлення: 20
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MCU06N40-TP MCU06N40-TP Micro Commercial Co MCU06N40_DS.pdf Description: MOSFET N-CH 400V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 462 pF @ 25 V
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MCU06N40-TP MCU06N40-TP Micro Commercial Co MCU06N40_DS.pdf Description: MOSFET N-CH 400V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 462 pF @ 25 V
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MCU90N02-TP MCU90N02-TP Micro Commercial Co MCU90N02(DPAK).pdf Description: MOSFET N-CH 20V 90A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 4.5V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 10 V
товару немає в наявності
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MMBZ5235B-TP MMBZ5235B-TP Micro Commercial Co MMBZ5221B-MMBZ5259B(SOT-23).pdf Description: DIODE ZENER 6.8V 350MW SOT23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
товару немає в наявності
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2SC4548-D-TP 2SC4548-D-TP Micro Commercial Co 2SC4548-x.pdf Description: TRANS NPN 400V 0.2A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: SOT-89
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 500 mW
товару немає в наявності
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2SC4548-E-TP 2SC4548-E-TP Micro Commercial Co 2SC4548-x.pdf Description: TRANS NPN 400V 0.2A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: SOT-89
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 500 mW
товару немає в наявності
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ER1D-TP Micro Commercial Co ER1A-ER1M_RevD_1-15-18.pdf Description: DIODE GP 200V 1A DO214AA HSMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA, HSMB
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
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1N5253B-TP 1N5253B-TP Micro Commercial Co 1N5221B-1N5267B%28DO-35%29.pdf Description: DIODE ZENER 25V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 25 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
товару немає в наявності
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SF22G-AP SF22G-AP Micro Commercial Co SF21G-SF28G(DO-15)-D.pdf Description: DIODE GPP SUPER FAST 2A DO-15
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SF22-AP SF22-AP Micro Commercial Co SF21-SF28.pdf Description: DIODE GPP SUPER FAST 2A DO-15
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SF22G-TP SF22G-TP Micro Commercial Co SF21G-SF28G(DO-15)-D.pdf Description: DIODE GPP SUPER FAST 2A DO-15
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SF22-TP SF22-TP Micro Commercial Co SF21-SF28.pdf Description: DIODE GPP SUPER FAST 2A DO-15
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2SB1694-TP 2SB1694-TP Micro Commercial Co 2SB1694.pdf Description: TRANS PNP 30V 1A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 380mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
товару немає в наявності
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SIL2623-TP SIL2623-TP Micro Commercial Co SIL2623(SOT23-6L).pdf Description: MOSFET 2 P-CH 30V 3A SOT23-6L
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SIL2623-TP SIL2623-TP Micro Commercial Co SIL2623(SOT23-6L).pdf Description: MOSFET 2 P-CH 30V 3A SOT23-6L
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DL5253B-TP DL5253B-TP Micro Commercial Co DL5221B-DL5267B%28Minimelf%29.pdf Description: DIODE ZENER 25V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 25 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+4.51 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
RS3000-AP RS3000-AP Micro Commercial Co RS3000.pdf Description: DIODE GEN PURP 3KV 200MA DO41
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RS3000-TP RS3000-TP Micro Commercial Co RS3000.pdf Description: DIODE GEN PURP 3KV 200MA DO41
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2SD1835-AP 2SD1835-AP Micro Commercial Co 2SD1835(TO-92)-V1.pdf Description: TRANS NPN 50V 2A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 750 mW
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2SD1835-BP 2SD1835-BP Micro Commercial Co 2SD1835(TO-92)-V1.pdf Description: TRANS NPN 50V 2A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 750 mW
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MPSW01A-BP MPSW01A-BP Micro Commercial Co MPSW01A(TO-92)-V1.pdf Description: TRANSISTOR TO-92
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RL253GP-TP RL253GP-TP Micro Commercial Co RL251GP-RL257GP(R-3).PDF Description: DIODE GEN PURP 200V 2.5A R-3
Packaging: Tape & Reel (TR)
Package / Case: R-3, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: R-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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US5G-TP US5G-TP Micro Commercial Co US5A-US5M(DO-214AB).pdf Description: DIODE GEN PURP 400V 5A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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US5G-TP US5G-TP Micro Commercial Co US5A-US5M(DO-214AB).pdf Description: DIODE GEN PURP 400V 5A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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MBR3U200-TP MBR3U200-TP Micro Commercial Co MBR3U200(TO-277).pdf Description: DIODE ARR SCHOTT 200V 3A TO277
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-277
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
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MBR3U200-TP MBR3U200-TP Micro Commercial Co MBR3U200(TO-277).pdf Description: DIODE ARR SCHOTT 200V 3A TO277
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-277
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
товару немає в наявності
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MIW40N120-BP MIW40N120-BP Micro Commercial Co MIW40N120(TO-247).pdf Description: IGBT 1200V 40A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 62ns/265ns
Switching Energy: 3.3mJ (on), 1.4mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 239 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 277 W
товару немає в наявності
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MCAC53N06Y-TP MCAC53N06Y-TP Micro Commercial Co MCAC53N06Y(DFN5060).pdf Description: MOSFET N-CH 60V 53A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1988 pF @ 30 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+23.48 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
MCAC53N06Y-TP MCAC53N06Y-TP Micro Commercial Co MCAC53N06Y(DFN5060).pdf Description: MOSFET N-CH 60V 53A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1988 pF @ 30 V
на замовлення 8010 шт:
термін постачання 21-31 дні (днів)
6+59.54 грн
10+46.94 грн
100+36.53 грн
500+29.06 грн
1000+23.67 грн
2000+22.28 грн
Мінімальне замовлення: 6
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2SD1499-P-BP 2SD1499-P.pdf
2SD1499-P-BP
Виробник: Micro Commercial Co
Description: TRANS NPN 100V 5A TO220F
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KBJL408G-BP
Виробник: Micro Commercial Co
Description: DIODE BRIDGE KBJL
Packaging: Bulk
Package / Case: 4-SIP, KBJL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJL
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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GBJA10005-BP
Виробник: Micro Commercial Co
Description: DIODE BRIDGE 10A JA
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KBJA10005-BP
Виробник: Micro Commercial Co
Description: DIODE BRIDGE 10A JB
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HER301G-AP HER301G~HER308G(DO-201AD).pdf
HER301G-AP
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 50V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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BAS40DW-06-TP BAS40TW_DW-04_DW-05_DW-06_BRW(SOT-363).PDF
BAS40DW-06-TP
Виробник: Micro Commercial Co
Description: DIODE ARR SCHOT 40V 200MA SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 2 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-363
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
товару немає в наявності
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GBJ1502-BP GBJ15005~GBJ1510(GBJ).pdf
GBJ1502-BP
Виробник: Micro Commercial Co
Description: BRIDGE RECT 1PHASE 200V 15A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
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1N5396GP-AP 1N5391GP~1N5399GP(DO-15).pdf
1N5396GP-AP
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 500V 1.5A DO15
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 500 V
товару немає в наявності
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1N5396GP-TP 1N5391GP~1N5399GP(DO-15).pdf
1N5396GP-TP
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 500V 1.5A DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 500 V
товару немає в наявності
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SIL05N06-TP SIL05N06(SOT23-6L).pdf
SIL05N06-TP
Виробник: Micro Commercial Co
Description: MOSFET N-CH 60V 5A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Power Dissipation (Max): 1.7W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 30 V
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SIL05N06-TP SIL05N06(SOT23-6L).pdf
SIL05N06-TP
Виробник: Micro Commercial Co
Description: MOSFET N-CH 60V 5A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Power Dissipation (Max): 1.7W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 30 V
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M8550-B-AP
M8550-B-AP
Виробник: Micro Commercial Co
Description: TRANS PNP 25V 0.8A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
товару немає в наявності
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LLDB4-TP LLDB4_DS.pdf
Виробник: Micro Commercial Co
Description: DIAC BIDIRECTIONAL MINIMELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Operating Temperature: -40°C ~ 110°C (TJ)
Voltage - Breakover: 35 ~ 45V
Current - Breakover: 100 µA
Supplier Device Package: Mini MELF
Current - Peak Output: 2 A
товару немає в наявності
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FR1K-TP FR10A-FR10M.pdf
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 800V 1A DO214AA
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FR1K-LTP FR1A-L-FR1M-L(DO-214AA).pdf
FR1K-LTP
Виробник: Micro Commercial Co
Description: DIODE 800V 1A SMB DO214AA
товару немає в наявності
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MMXZ5245B-TP MMXZ5223B-MMXZ5259B(SOD-323).pdf
MMXZ5245B-TP
Виробник: Micro Commercial Co
Description: DIODE ZENER 15V 200MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
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MMXZ5245B-TP MMXZ5223B-MMXZ5259B(SOD-323).pdf
MMXZ5245B-TP
Виробник: Micro Commercial Co
Description: DIODE ZENER 15V 200MW SOD323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
на замовлення 2112 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
22+15.08 грн
29+10.63 грн
100+5.76 грн
500+4.25 грн
1000+2.95 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
SI5618-TP SI5618(SOT-23).pdf
SI5618-TP
Виробник: Micro Commercial Co
Description: MOSFET P-CH 60V 1.9A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 10V
Power Dissipation (Max): 830mW
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+7.33 грн
6000+6.76 грн
Мінімальне замовлення: 3000
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SI5618-TP SI5618(SOT-23).pdf
SI5618-TP
Виробник: Micro Commercial Co
Description: MOSFET P-CH 60V 1.9A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 10V
Power Dissipation (Max): 830mW
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V
на замовлення 7542 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+26.99 грн
16+20.26 грн
100+12.18 грн
500+10.58 грн
1000+7.19 грн
Мінімальне замовлення: 12
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MUR30120B-BP MUR30120B(TO-247AD).pdf
MUR30120B-BP
Виробник: Micro Commercial Co
Description: DIODE STANDARD 1200V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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MMSZ5261B-TP MMSZ5221-MMSZ5267(SOD123)-J.pdf
MMSZ5261B-TP
Виробник: Micro Commercial Co
Description: DIODE ZENER 500MW SOD-123
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P6KE62A-TP P6KE6.8(A)-P6KE600(A)(DO-15).pdf
P6KE62A-TP
Виробник: Micro Commercial Co
Description: TVS DIODE 53VWM 85VC DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.1A
Voltage - Reverse Standoff (Typ): 53V
Supplier Device Package: DO-15
Unidirectional Channels: 1
Voltage - Breakdown (Min): 58.9V
Voltage - Clamping (Max) @ Ipp: 85V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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P6KE62A-TP P6KE6.8(A)-P6KE600(A)(DO-15).pdf
P6KE62A-TP
Виробник: Micro Commercial Co
Description: TVS DIODE 53VWM 85VC DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.1A
Voltage - Reverse Standoff (Typ): 53V
Supplier Device Package: DO-15
Unidirectional Channels: 1
Voltage - Breakdown (Min): 58.9V
Voltage - Clamping (Max) @ Ipp: 85V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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DL5251B-TP DL5221B-DL5267B%28Minimelf%29.pdf
DL5251B-TP
Виробник: Micro Commercial Co
Description: DIODE ZENER 22V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 29 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
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DL5251B-TP DL5221B-DL5267B%28Minimelf%29.pdf
DL5251B-TP
Виробник: Micro Commercial Co
Description: DIODE ZENER 22V 500MW MINI MELF
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 29 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
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DL5237B-TP DL5221B-DL5267B%28Minimelf%29.pdf
DL5237B-TP
Виробник: Micro Commercial Co
Description: DIODE ZENER 8.2V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
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DL5237B-TP DL5221B-DL5267B%28Minimelf%29.pdf
DL5237B-TP
Виробник: Micro Commercial Co
Description: DIODE ZENER 8.2V 500MW MINI MELF
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
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DL5256B-TP DL5221B-DL5267B%28Minimelf%29.pdf
DL5256B-TP
Виробник: Micro Commercial Co
Description: DIODE ZENER 30V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
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DL5256B-TP DL5221B-DL5267B%28Minimelf%29.pdf
DL5256B-TP
Виробник: Micro Commercial Co
Description: DIODE ZENER 30V 500MW MINI MELF
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
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BZX84C47-TP BZX84C(B)2V4~BZX84C(B)75(SOT-23).pdf
BZX84C47-TP
Виробник: Micro Commercial Co
Description: DIODE ZENER 47V 350MW SOT23
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BZX84C47-TP BZX84C(B)2V4~BZX84C(B)75(SOT-23).pdf
BZX84C47-TP
Виробник: Micro Commercial Co
Description: DIODE ZENER 47V 350MW SOT23
на замовлення 2963 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
20+15.88 грн
25+12.46 грн
100+6.59 грн
500+4.07 грн
1000+2.77 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
MCU06N40-TP MCU06N40_DS.pdf
MCU06N40-TP
Виробник: Micro Commercial Co
Description: MOSFET N-CH 400V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 462 pF @ 25 V
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MCU06N40-TP MCU06N40_DS.pdf
MCU06N40-TP
Виробник: Micro Commercial Co
Description: MOSFET N-CH 400V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 462 pF @ 25 V
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MCU90N02-TP MCU90N02(DPAK).pdf
MCU90N02-TP
Виробник: Micro Commercial Co
Description: MOSFET N-CH 20V 90A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 4.5V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 10 V
товару немає в наявності
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MMBZ5235B-TP MMBZ5221B-MMBZ5259B(SOT-23).pdf
MMBZ5235B-TP
Виробник: Micro Commercial Co
Description: DIODE ZENER 6.8V 350MW SOT23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
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2SC4548-D-TP 2SC4548-x.pdf
2SC4548-D-TP
Виробник: Micro Commercial Co
Description: TRANS NPN 400V 0.2A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: SOT-89
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 500 mW
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2SC4548-E-TP 2SC4548-x.pdf
2SC4548-E-TP
Виробник: Micro Commercial Co
Description: TRANS NPN 400V 0.2A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: SOT-89
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 500 mW
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ER1D-TP ER1A-ER1M_RevD_1-15-18.pdf
Виробник: Micro Commercial Co
Description: DIODE GP 200V 1A DO214AA HSMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA, HSMB
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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1N5253B-TP 1N5221B-1N5267B%28DO-35%29.pdf
1N5253B-TP
Виробник: Micro Commercial Co
Description: DIODE ZENER 25V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 25 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
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SF22G-AP SF21G-SF28G(DO-15)-D.pdf
SF22G-AP
Виробник: Micro Commercial Co
Description: DIODE GPP SUPER FAST 2A DO-15
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SF22-AP SF21-SF28.pdf
SF22-AP
Виробник: Micro Commercial Co
Description: DIODE GPP SUPER FAST 2A DO-15
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SF22G-TP SF21G-SF28G(DO-15)-D.pdf
SF22G-TP
Виробник: Micro Commercial Co
Description: DIODE GPP SUPER FAST 2A DO-15
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SF22-TP SF21-SF28.pdf
SF22-TP
Виробник: Micro Commercial Co
Description: DIODE GPP SUPER FAST 2A DO-15
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2SB1694-TP 2SB1694.pdf
2SB1694-TP
Виробник: Micro Commercial Co
Description: TRANS PNP 30V 1A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 380mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
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SIL2623-TP SIL2623(SOT23-6L).pdf
SIL2623-TP
Виробник: Micro Commercial Co
Description: MOSFET 2 P-CH 30V 3A SOT23-6L
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SIL2623-TP SIL2623(SOT23-6L).pdf
SIL2623-TP
Виробник: Micro Commercial Co
Description: MOSFET 2 P-CH 30V 3A SOT23-6L
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DL5253B-TP DL5221B-DL5267B%28Minimelf%29.pdf
DL5253B-TP
Виробник: Micro Commercial Co
Description: DIODE ZENER 25V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 25 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+4.51 грн
Мінімальне замовлення: 2500
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RS3000-AP RS3000.pdf
RS3000-AP
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 3KV 200MA DO41
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RS3000-TP RS3000.pdf
RS3000-TP
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 3KV 200MA DO41
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2SD1835-AP 2SD1835(TO-92)-V1.pdf
2SD1835-AP
Виробник: Micro Commercial Co
Description: TRANS NPN 50V 2A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 750 mW
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2SD1835-BP 2SD1835(TO-92)-V1.pdf
2SD1835-BP
Виробник: Micro Commercial Co
Description: TRANS NPN 50V 2A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 750 mW
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MPSW01A-BP MPSW01A(TO-92)-V1.pdf
MPSW01A-BP
Виробник: Micro Commercial Co
Description: TRANSISTOR TO-92
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RL253GP-TP RL251GP-RL257GP(R-3).PDF
RL253GP-TP
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 200V 2.5A R-3
Packaging: Tape & Reel (TR)
Package / Case: R-3, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: R-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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US5G-TP US5A-US5M(DO-214AB).pdf
US5G-TP
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 400V 5A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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US5G-TP US5A-US5M(DO-214AB).pdf
US5G-TP
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 400V 5A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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MBR3U200-TP MBR3U200(TO-277).pdf
MBR3U200-TP
Виробник: Micro Commercial Co
Description: DIODE ARR SCHOTT 200V 3A TO277
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-277
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
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MBR3U200-TP MBR3U200(TO-277).pdf
MBR3U200-TP
Виробник: Micro Commercial Co
Description: DIODE ARR SCHOTT 200V 3A TO277
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-277
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
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MIW40N120-BP MIW40N120(TO-247).pdf
MIW40N120-BP
Виробник: Micro Commercial Co
Description: IGBT 1200V 40A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 62ns/265ns
Switching Energy: 3.3mJ (on), 1.4mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 239 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 277 W
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MCAC53N06Y-TP MCAC53N06Y(DFN5060).pdf
MCAC53N06Y-TP
Виробник: Micro Commercial Co
Description: MOSFET N-CH 60V 53A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1988 pF @ 30 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+23.48 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
MCAC53N06Y-TP MCAC53N06Y(DFN5060).pdf
MCAC53N06Y-TP
Виробник: Micro Commercial Co
Description: MOSFET N-CH 60V 53A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1988 pF @ 30 V
на замовлення 8010 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+59.54 грн
10+46.94 грн
100+36.53 грн
500+29.06 грн
1000+23.67 грн
2000+22.28 грн
Мінімальне замовлення: 6
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