Продукція > MICRO COMMERCIAL CO > Всі товари виробника MICRO COMMERCIAL CO (8139) > Сторінка 57 з 136
Фото | Назва | Виробник | Інформація |
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1N4004-N-2-3-AP | Micro Commercial Co |
Description: DIODE GEN PURP 400V 1A DO41 Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SF24G-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-15 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 2 Voltage Coupled to Current - Reverse Leakage @ Vr: 200 Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MMBT3904L3-TP | Micro Commercial Co |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: NPN Supplier Device Package: DFN1006-3 Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 150 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FR601GP-AP | Micro Commercial Co |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
5.0SMLJ160A-TP | Micro Commercial Co |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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5.0SMLJ16A-TP | Micro Commercial Co |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 193A Voltage - Reverse Standoff (Typ): 16V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 17.8V Voltage - Clamping (Max) @ Ipp: 26V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
5.0SMLJ160CA-TP | Micro Commercial Co |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
5.0SMLJ16CA-TP | Micro Commercial Co |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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AZ23C3V6-TP | Micro Commercial Co |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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AZ23C3V6-TP | Micro Commercial Co |
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на замовлення 2851 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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BY133GP-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1300 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1300 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BY133GP-TP | Micro Commercial Co |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1300 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1300 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MCAC40N10YA-TP | Micro Commercial Co |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tj) Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V Power Dissipation (Max): 70W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DFN5060 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1684 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MCAC40N10YA-TP | Micro Commercial Co |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tj) Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V Power Dissipation (Max): 70W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DFN5060 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1684 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BA158GP-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BA158GP-TP | Micro Commercial Co |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BC636-16-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 830 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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HER302G-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 80pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SF66G-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 90pF @ 4V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SF66G-TP | Micro Commercial Co |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 90pF @ 4V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MGR1207-BP | Micro Commercial Co |
Description: DIODE GEN PURP 1KV 12A TO220AC Packaging: Bulk Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 100pF @ 4V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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HER102G-AP | Micro Commercial Co |
Description: DIODE STANDARD 100V 1A DO41 Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RL252-TP | Micro Commercial Co |
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на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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RL252GP-TP | Micro Commercial Co |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MPSA55-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 50MHz Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 625 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
SRA501GP-TP | Micro Commercial Co | Description: DIODE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SRA501-TP | Micro Commercial Co | Description: DIODE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SRA502GP-TP | Micro Commercial Co | Description: DIODE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SRA502-TP | Micro Commercial Co | Description: DIODE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SRA503GP-TP | Micro Commercial Co | Description: DIODE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SRA503-TP | Micro Commercial Co | Description: DIODE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SRA504GP-TP | Micro Commercial Co | Description: DIODE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SRA504-TP | Micro Commercial Co | Description: DIODE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SRA505GP-TP | Micro Commercial Co | Description: DIODE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SRA505-TP | Micro Commercial Co | Description: DIODE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SRA506GP-TP | Micro Commercial Co | Description: DIODE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SRA506-TP | Micro Commercial Co | Description: DIODE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SRA507GP-TP | Micro Commercial Co | Description: DIODE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SRA507-TP | Micro Commercial Co | Description: DIODE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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RB551V-40-TP | Micro Commercial Co |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 500mA Supplier Device Package: SOD-323 Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA Current - Reverse Leakage @ Vr: 100 µA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RB551V-40-TP | Micro Commercial Co |
![]() Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 500mA Supplier Device Package: SOD-323 Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA Current - Reverse Leakage @ Vr: 100 µA @ 40 V |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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BZT52C22LP-TP | Micro Commercial Co |
![]() Tolerance: ±6% Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 55 Ohms Supplier Device Package: SOD-882 Part Status: Obsolete Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 15.4 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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GBJA6005-BP | Micro Commercial Co | Description: DIODE BRIDGE 6A JA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
GBJA601-BP | Micro Commercial Co | Description: DIODE BRIDGE 6A JA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
GBJA602-BP | Micro Commercial Co | Description: DIODE BRIDGE 6A JA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
GBJA604-BP | Micro Commercial Co | Description: DIODE BRIDGE 6A JA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
GBJA608-BP | Micro Commercial Co |
![]() Packaging: Bulk Package / Case: 4-SIP, JA Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C Technology: Standard Supplier Device Package: JA Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
GBJA610-BP | Micro Commercial Co |
![]() Packaging: Bulk Package / Case: 4-SIP, JA Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C Technology: Standard Supplier Device Package: JA Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
GBJL6005-BP | Micro Commercial Co | Description: DIODE BRIDGE GBJL |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
GBJL601-BP | Micro Commercial Co | Description: DIODE BRIDGE GBJL |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
GBJL602-BP | Micro Commercial Co | Description: DIODE BRIDGE GBJL |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
GBJL604-BP | Micro Commercial Co | Description: DIODE BRIDGE GBJL |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
GBJL608-BP | Micro Commercial Co |
Description: BRIDGE RECT 1PHASE 800V 6A GBJL Packaging: Bulk Package / Case: 4-SIP, GBJL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C Technology: Standard Supplier Device Package: GBJL Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
GBJL610-BP | Micro Commercial Co |
Description: DIODE BRIDGE GBJL Packaging: Bulk Package / Case: 4-SIP, GBJL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C Technology: Standard Supplier Device Package: GBJL Part Status: Obsolete Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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LMB16S-TP | Micro Commercial Co |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Schottky Supplier Device Package: LMBS-1 Voltage - Peak Reverse (Max): 60 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 650 mV @ 500 mA Current - Reverse Leakage @ Vr: 500 µA @ 60 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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LMB16S-TP | Micro Commercial Co |
![]() Packaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Schottky Supplier Device Package: LMBS-1 Voltage - Peak Reverse (Max): 60 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 650 mV @ 500 mA Current - Reverse Leakage @ Vr: 500 µA @ 60 V |
на замовлення 11420 шт: термін постачання 21-31 дні (днів) |
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R2000FGP-TP | Micro Commercial Co |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 2000 V Current - Reverse Leakage @ Vr: 5 µA @ 2000 V |
на замовлення 35000 шт: термін постачання 21-31 дні (днів) |
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R2000FGP-TP | Micro Commercial Co |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 2000 V Current - Reverse Leakage @ Vr: 5 µA @ 2000 V |
на замовлення 44065 шт: термін постачання 21-31 дні (днів) |
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MCB70N10Y-TP | Micro Commercial Co |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V Power Dissipation (Max): 115W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2960 pF @ 50 V |
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MCB70N10Y-TP | Micro Commercial Co |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V Power Dissipation (Max): 115W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2960 pF @ 50 V |
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1N4004-N-2-3-AP |
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 400V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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SF24G-AP |
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Виробник: Micro Commercial Co
Description: DIODE STANDARD 200V 2A DO15
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 2
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE STANDARD 200V 2A DO15
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 2
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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MMBT3904L3-TP |
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Виробник: Micro Commercial Co
Description: TRANS NPN 40V 0.2A DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Supplier Device Package: DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 150 mW
Description: TRANS NPN 40V 0.2A DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Supplier Device Package: DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 150 mW
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FR601GP-AP |
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Виробник: Micro Commercial Co
Description: DIODE GPP FAST 6A R-6
Description: DIODE GPP FAST 6A R-6
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5.0SMLJ160A-TP |
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Виробник: Micro Commercial Co
Description: TVS DIODE 160V 259V DO214AB
Description: TVS DIODE 160V 259V DO214AB
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5.0SMLJ16A-TP |
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Виробник: Micro Commercial Co
Description: TVS DIODE 16VWM 26VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 193A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 16VWM 26VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 193A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
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5.0SMLJ160CA-TP |
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Виробник: Micro Commercial Co
Description: TVS DIODE 160VWM 259VC DO214AB
Description: TVS DIODE 160VWM 259VC DO214AB
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5.0SMLJ16CA-TP |
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Виробник: Micro Commercial Co
Description: TVS DIODE 16V 26V DO214AB
Description: TVS DIODE 16V 26V DO214AB
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AZ23C3V6-TP |
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Виробник: Micro Commercial Co
Description: DIODE ZENER ARRAY 3.6V SOT23
Description: DIODE ZENER ARRAY 3.6V SOT23
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AZ23C3V6-TP |
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Виробник: Micro Commercial Co
Description: DIODE ZENER ARRAY 3.6V SOT23
Description: DIODE ZENER ARRAY 3.6V SOT23
на замовлення 2851 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BY133GP-AP |
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Виробник: Micro Commercial Co
Description: DIODE GEN PURP 1.3KV 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Description: DIODE GEN PURP 1.3KV 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
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BY133GP-TP |
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Виробник: Micro Commercial Co
Description: DIODE GEN PURP 1.3KV 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Description: DIODE GEN PURP 1.3KV 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
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MCAC40N10YA-TP |
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Виробник: Micro Commercial Co
Description: MOSFET N-CH 100 40A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 70W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1684 pF @ 50 V
Description: MOSFET N-CH 100 40A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 70W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1684 pF @ 50 V
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MCAC40N10YA-TP |
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Виробник: Micro Commercial Co
Description: MOSFET N-CH 100 40A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 70W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1684 pF @ 50 V
Description: MOSFET N-CH 100 40A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 70W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1684 pF @ 50 V
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BA158GP-AP |
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Виробник: Micro Commercial Co
Description: DIODE STANDARD 600V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE STANDARD 600V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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BA158GP-TP |
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Виробник: Micro Commercial Co
Description: DIODE STANDARD 600V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE STANDARD 600V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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BC636-16-AP |
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Виробник: Micro Commercial Co
Description: TRANS PNP 45V 1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 830 mW
Description: TRANS PNP 45V 1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 830 mW
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HER302G-AP |
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Виробник: Micro Commercial Co
Description: DIODE GEN PURP 100V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP 100V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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SF66G-AP |
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Виробник: Micro Commercial Co
Description: DIODE GEN PURP 400V 6A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 6A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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SF66G-TP |
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Виробник: Micro Commercial Co
Description: DIODE GEN PURP 400V 6A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 6A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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MGR1207-BP |
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 1KV 12A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1KV 12A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
В кошику
од. на суму грн.
HER102G-AP |
Виробник: Micro Commercial Co
Description: DIODE STANDARD 100V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE STANDARD 100V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
RL252-TP |
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Виробник: Micro Commercial Co
Description: DIODE GEN PURP 100V 2.5A R3
Description: DIODE GEN PURP 100V 2.5A R3
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
RL252GP-TP |
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Виробник: Micro Commercial Co
Description: DIODE GEN PURP 2.5A 100V R3
Description: DIODE GEN PURP 2.5A 100V R3
товару немає в наявності
В кошику
од. на суму грн.
MPSA55-AP |
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Виробник: Micro Commercial Co
Description: TRANS PNP 80V 0.5A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
Description: TRANS PNP 80V 0.5A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
товару немає в наявності
В кошику
од. на суму грн.
SRA501GP-TP |
Виробник: Micro Commercial Co
Description: DIODE
Description: DIODE
товару немає в наявності
В кошику
од. на суму грн.
SRA501-TP |
Виробник: Micro Commercial Co
Description: DIODE
Description: DIODE
товару немає в наявності
В кошику
од. на суму грн.
SRA502GP-TP |
Виробник: Micro Commercial Co
Description: DIODE
Description: DIODE
товару немає в наявності
В кошику
од. на суму грн.
SRA502-TP |
Виробник: Micro Commercial Co
Description: DIODE
Description: DIODE
товару немає в наявності
В кошику
од. на суму грн.
SRA503GP-TP |
Виробник: Micro Commercial Co
Description: DIODE
Description: DIODE
товару немає в наявності
В кошику
од. на суму грн.
SRA503-TP |
Виробник: Micro Commercial Co
Description: DIODE
Description: DIODE
товару немає в наявності
В кошику
од. на суму грн.
SRA504GP-TP |
Виробник: Micro Commercial Co
Description: DIODE
Description: DIODE
товару немає в наявності
В кошику
од. на суму грн.
SRA504-TP |
Виробник: Micro Commercial Co
Description: DIODE
Description: DIODE
товару немає в наявності
В кошику
од. на суму грн.
SRA505GP-TP |
Виробник: Micro Commercial Co
Description: DIODE
Description: DIODE
товару немає в наявності
В кошику
од. на суму грн.
SRA505-TP |
Виробник: Micro Commercial Co
Description: DIODE
Description: DIODE
товару немає в наявності
В кошику
од. на суму грн.
SRA506GP-TP |
Виробник: Micro Commercial Co
Description: DIODE
Description: DIODE
товару немає в наявності
В кошику
од. на суму грн.
SRA506-TP |
Виробник: Micro Commercial Co
Description: DIODE
Description: DIODE
товару немає в наявності
В кошику
од. на суму грн.
SRA507GP-TP |
Виробник: Micro Commercial Co
Description: DIODE
Description: DIODE
товару немає в наявності
В кошику
од. на суму грн.
SRA507-TP |
Виробник: Micro Commercial Co
Description: DIODE
Description: DIODE
товару немає в наявності
В кошику
од. на суму грн.
RB551V-40-TP |
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Виробник: Micro Commercial Co
Description: DIODE SCHOTTKY 40V 500MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Description: DIODE SCHOTTKY 40V 500MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
товару немає в наявності
В кошику
од. на суму грн.
RB551V-40-TP |
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Виробник: Micro Commercial Co
Description: DIODE SCHOTTKY 40V 500MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Description: DIODE SCHOTTKY 40V 500MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
18+ | 18.26 грн |
26+ | 12.16 грн |
100+ | 8.16 грн |
500+ | 5.88 грн |
1000+ | 5.29 грн |
BZT52C22LP-TP |
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Виробник: Micro Commercial Co
Description: DIODE ZENER 22V 250MW SOD882
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-882
Part Status: Obsolete
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15.4 V
Description: DIODE ZENER 22V 250MW SOD882
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-882
Part Status: Obsolete
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15.4 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 5.97 грн |
GBJA6005-BP |
Виробник: Micro Commercial Co
Description: DIODE BRIDGE 6A JA
Description: DIODE BRIDGE 6A JA
товару немає в наявності
В кошику
од. на суму грн.
GBJA601-BP |
Виробник: Micro Commercial Co
Description: DIODE BRIDGE 6A JA
Description: DIODE BRIDGE 6A JA
товару немає в наявності
В кошику
од. на суму грн.
GBJA602-BP |
Виробник: Micro Commercial Co
Description: DIODE BRIDGE 6A JA
Description: DIODE BRIDGE 6A JA
товару немає в наявності
В кошику
од. на суму грн.
GBJA604-BP |
Виробник: Micro Commercial Co
Description: DIODE BRIDGE 6A JA
Description: DIODE BRIDGE 6A JA
товару немає в наявності
В кошику
од. на суму грн.
GBJA608-BP |
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Виробник: Micro Commercial Co
Description: DIODE BRIDGE 6A JA
Packaging: Bulk
Package / Case: 4-SIP, JA
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: JA
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: DIODE BRIDGE 6A JA
Packaging: Bulk
Package / Case: 4-SIP, JA
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: JA
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
GBJA610-BP |
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Виробник: Micro Commercial Co
Description: DIODE BRIDGE 6A JA
Packaging: Bulk
Package / Case: 4-SIP, JA
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: JA
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE BRIDGE 6A JA
Packaging: Bulk
Package / Case: 4-SIP, JA
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: JA
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товару немає в наявності
В кошику
од. на суму грн.
GBJL6005-BP |
Виробник: Micro Commercial Co
Description: DIODE BRIDGE GBJL
Description: DIODE BRIDGE GBJL
товару немає в наявності
В кошику
од. на суму грн.
GBJL601-BP |
Виробник: Micro Commercial Co
Description: DIODE BRIDGE GBJL
Description: DIODE BRIDGE GBJL
товару немає в наявності
В кошику
од. на суму грн.
GBJL602-BP |
Виробник: Micro Commercial Co
Description: DIODE BRIDGE GBJL
Description: DIODE BRIDGE GBJL
товару немає в наявності
В кошику
од. на суму грн.
GBJL604-BP |
Виробник: Micro Commercial Co
Description: DIODE BRIDGE GBJL
Description: DIODE BRIDGE GBJL
товару немає в наявності
В кошику
од. на суму грн.
GBJL608-BP |
Виробник: Micro Commercial Co
Description: BRIDGE RECT 1PHASE 800V 6A GBJL
Packaging: Bulk
Package / Case: 4-SIP, GBJL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBJL
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 6A GBJL
Packaging: Bulk
Package / Case: 4-SIP, GBJL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBJL
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
GBJL610-BP |
Виробник: Micro Commercial Co
Description: DIODE BRIDGE GBJL
Packaging: Bulk
Package / Case: 4-SIP, GBJL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBJL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE BRIDGE GBJL
Packaging: Bulk
Package / Case: 4-SIP, GBJL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBJL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
В кошику
од. на суму грн.
LMB16S-TP |
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Виробник: Micro Commercial Co
Description: BRIDGE RECT 1PHASE 60V 1A LMBS-1
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Schottky
Supplier Device Package: LMBS-1
Voltage - Peak Reverse (Max): 60 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 500 mA
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Description: BRIDGE RECT 1PHASE 60V 1A LMBS-1
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Schottky
Supplier Device Package: LMBS-1
Voltage - Peak Reverse (Max): 60 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 500 mA
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 9.54 грн |
LMB16S-TP |
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Виробник: Micro Commercial Co
Description: BRIDGE RECT 1PHASE 60V 1A LMBS-1
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Schottky
Supplier Device Package: LMBS-1
Voltage - Peak Reverse (Max): 60 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 500 mA
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Description: BRIDGE RECT 1PHASE 60V 1A LMBS-1
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Schottky
Supplier Device Package: LMBS-1
Voltage - Peak Reverse (Max): 60 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 500 mA
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
на замовлення 11420 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 42.08 грн |
13+ | 25.00 грн |
100+ | 17.60 грн |
500+ | 12.48 грн |
1000+ | 10.41 грн |
2000+ | 10.08 грн |
R2000FGP-TP |
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Виробник: Micro Commercial Co
Description: DIODE GEN PURP 2KV 500MA DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2000 V
Current - Reverse Leakage @ Vr: 5 µA @ 2000 V
Description: DIODE GEN PURP 2KV 500MA DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2000 V
Current - Reverse Leakage @ Vr: 5 µA @ 2000 V
на замовлення 35000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 5.08 грн |
10000+ | 4.18 грн |
15000+ | 3.98 грн |
25000+ | 3.66 грн |
35000+ | 3.58 грн |
R2000FGP-TP |
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Виробник: Micro Commercial Co
Description: DIODE GEN PURP 2KV 500MA DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2000 V
Current - Reverse Leakage @ Vr: 5 µA @ 2000 V
Description: DIODE GEN PURP 2KV 500MA DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2000 V
Current - Reverse Leakage @ Vr: 5 µA @ 2000 V
на замовлення 44065 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
14+ | 23.02 грн |
21+ | 14.75 грн |
100+ | 7.92 грн |
500+ | 6.29 грн |
1000+ | 5.59 грн |
2000+ | 5.53 грн |
MCB70N10Y-TP |
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Виробник: Micro Commercial Co
Description: MOSFET N-CH 100V 70A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
Power Dissipation (Max): 115W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2960 pF @ 50 V
Description: MOSFET N-CH 100V 70A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
Power Dissipation (Max): 115W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2960 pF @ 50 V
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В кошику
од. на суму грн.
MCB70N10Y-TP |
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Виробник: Micro Commercial Co
Description: MOSFET N-CH 100V 70A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
Power Dissipation (Max): 115W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2960 pF @ 50 V
Description: MOSFET N-CH 100V 70A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
Power Dissipation (Max): 115W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2960 pF @ 50 V
товару немає в наявності
В кошику
од. на суму грн.