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JANTX1N6068A JANTX1N6068A Microchip Technology 1N6036A-1N6072A.pdf Description: TVS DIODE 145VWM 245VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.1A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 245V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500/507
товару немає в наявності
 Мінімальне замовлення: 100 шт
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JAN1N6069A JAN1N6069A Microchip Technology 8923-lds-0097-datasheet Description: TVS DIODE 150VWM 261VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.7A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 261V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/507
товару немає в наявності
 Мінімальне замовлення: 100 шт
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JANTX1N6069A JANTX1N6069A Microchip Technology 8923-lds-0097-datasheet Description: TVS DIODE 150VWM 261VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.7A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 261V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/507
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 Мінімальне замовлення: 100 шт
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JANTX1N6072A JANTX1N6072A Microchip Technology 1N6036A-1N6072A.pdf Description: TVS DIODE 185VWM 328VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.6A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500/507
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 Мінімальне замовлення: 100 шт
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JANTXV1N6314US Microchip Technology Description: DIODE ZENER 3.9V 500MW MELF
товару немає в наявності
 Мінімальне замовлення: 500 шт
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JANS1N6316US Microchip Technology Description: DIODE ZENER 4.7V 500MW MELF
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: B, SQ-MELF
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
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JANTX1N6316US JANTX1N6316US Microchip Technology Description: DIODE ZENER 4.7V 500MW SQ-MELF
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
Qualification: MIL-PRF-19500/533
товару немає в наявності
 Мінімальне замовлення: 100 шт
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JANTXV1N6316US Microchip Technology Description: DIODE ZENER 4.7V 500MW MELF
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: B, SQ-MELF
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
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JAN1N6317US Microchip Technology Description: DIODE ZENER 5.1V 500MW DO35
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JANS1N6317US JANS1N6317US Microchip Technology 150_1N6309US%20thru%201N6355DUS.pdf Description: DIODE ZENER 5.1V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: MIL-PRF-19500/533
на замовлення 65 шт:
термін постачання 21-31 дні (днів)
1+9233.89 грн
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JANTX1N6317US JANTX1N6317US Microchip Technology 150_1N6309US%20thru%201N6355DUS.pdf Description: DIODE ZENER 5.1V 500MW SQ-MELF
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: MIL-PRF-19500/533
на замовлення 119 шт:
термін постачання 21-31 дні (днів)
1+1421.80 грн
100+1271.24 грн
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JANTXV1N6318 Microchip Technology 10924-lds-0193-datasheet Description: DIODE ZENER 5.6V 500MW DO35
товару немає в наявності
 Мінімальне замовлення: 500 шт
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JANTXV1N6318US JANTXV1N6318US Microchip Technology Description: DIODE ZENER 5.6V 500MW SQ-MELF
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 2.5 V
Qualification: MIL-PRF-19500/533
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 Мінімальне замовлення: 500 шт
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JANTX1N6319US Microchip Technology Description: DIODE ZENER 6.2V 500MW MELF
товару немає в наявності
 Мінімальне замовлення: 500 шт
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JANTXV1N6319US Microchip Technology Description: DIODE ZENER 6.2V 500MW MELF
товару немає в наявності
 Мінімальне замовлення: 500 шт
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JANTX1N6320 JANTX1N6320 Microchip Technology 10924-lds-0193-datasheet Description: DIODE ZENER 6.8V 500MW DO204AH
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Qualification: MIL-PRF-19500/533
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 Мінімальне замовлення: 500 шт
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JANTX1N6320US Microchip Technology Description: DIODE ZENER 6.8V 500MW MELF
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 Мінімальне замовлення: 500 шт
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JANTX1N6490 Microchip Technology 122691-lds-0183-datasheet Description: DIODE ZENER 5.1V 1.5W D5A
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JANTX1N6661 JANTX1N6661 Microchip Technology 11106-sd87a-datasheet Description: DIODE STD 225V 500MA DO204AH
Qualification: MIL-PRF-19500/587
Grade: Military
Current - Reverse Leakage @ Vr: 50 nA @ 225 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Voltage - DC Reverse (Vr) (Max): 225 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AH (DO-35)
Current - Average Rectified (Io): 500mA
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Bulk
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JANTXV1N6661US JANTXV1N6661US Microchip Technology 11107-sd88a-datasheet Description: DIODE GEN PURP 225V 500MA D-5A
Qualification: MIL-PRF-19500/587
Current - Reverse Leakage @ Vr: 50 nA @ 225 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Voltage - DC Reverse (Vr) (Max): 225 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 500mA
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
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JAN1N937B-1 JAN1N937B-1 Microchip Technology 5912-1n935-938b-datasheet Description: DIODE ZENER 9V 500MW DO35
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 9 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Qualification: MIL-PRF-19500/156
Grade: Military
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JAN1N937BUR-1 JAN1N937BUR-1 Microchip Technology Description: DIODE ZENER 9V 500MW DO35
Qualification: MIL-PRF-19500/156
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Power - Max: 500 mW
Grade: Military
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 9 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
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JANTX1N937BUR-1 JANTX1N937BUR-1 Microchip Technology Description: DIODE ZENER 9V 500MW DO35
Qualification: MIL-PRF-19500/156
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Power - Max: 500 mW
Grade: Military
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 9 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
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JAN1N938B-1 JAN1N938B-1 Microchip Technology 5912-1n935-938b-datasheet Description: DIODE ZENER 9V 500MW DO35
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 9 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Qualification: MIL-PRF-19500/156
Grade: Military
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JANS1N938B-1 JANS1N938B-1 Microchip Technology 5912-1n935-938b-datasheet Description: DIODE ZENER 9V 500MW DO35
Qualification: MIL-PRF-19500/156
Grade: Military
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 9 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
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JANTX1N938B-1 JANTX1N938B-1 Microchip Technology 5912-1n935-938b-datasheet Description: DIODE ZENER 9V 500MW DO35
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 9 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Qualification: MIL-PRF-19500/156
Grade: Military
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JANS1N938BUR-1 JANS1N938BUR-1 Microchip Technology Description: DIODE ZENER 9V 500MW DO35
Qualification: MIL-PRF-19500/156
Grade: Military
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 9 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
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JANTX1N938BUR-1 JANTX1N938BUR-1 Microchip Technology Description: DIODE ZENER 9V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Qualification: MIL-PRF-19500/156
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JAN2N1613 JAN2N1613 Microchip Technology 2N718A-2N1613-LDS-0200-MIL-PRF-19500-181.pdf Description: TRANS NPN 30V 0.5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/181
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 Мінімальне замовлення: 100 шт
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JAN2N1711 Microchip Technology Description: TRANS NPN 30V 0.5A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5
Grade: Military
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/225
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 Мінімальне замовлення: 500 шт
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JANTX2N1711 Microchip Technology 2N1711-2N1890-MIL-PRF-19500-225.PDF Description: TRANS NPN 30V 0.5A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/225
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
1+4770.62 грн
100+4265.95 грн
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JANTX2N2369AU JANTX2N2369AU Microchip Technology 8893-lds-0057-datasheet Description: TRANS NPN 15V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: U1 (SMD-1)
Grade: Military
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/317
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JAN2N2432 JAN2N2432 Microchip Technology 6026-2n2432-datasheet Description: TRANS NPN 30V 0.1A TO18
Qualification: MIL-PRF-19500/313
Grade: Military
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Current - Collector Cutoff (Max): 10nA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Operating Temperature: -65°C ~ 175°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
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JANTX2N2432 JANTX2N2432 Microchip Technology 6026-2n2432-datasheet Description: TRANS NPN 30V 0.1A TO18
Qualification: MIL-PRF-19500/313
Grade: Military
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Current - Collector Cutoff (Max): 10nA
Vce Saturation (Max) @ Ib, Ic: 0.15mV @ 500µA, 10V
Operating Temperature: -65°C ~ 175°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
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JAN2N2432A JAN2N2432A Microchip Technology 6026-2n2432-datasheet Description: TRANS NPN 45V 0.1A TO18
Qualification: MIL-PRF-19500/313
Grade: Military
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Current - Collector Cutoff (Max): 10nA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Operating Temperature: -65°C ~ 175°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
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JANTX2N2432A JANTX2N2432A Microchip Technology 6026-2n2432-datasheet Description: TRANS NPN 45V 0.1A TO18
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Current - Collector Cutoff (Max): 10nA
Vce Saturation (Max) @ Ib, Ic: 0.15mV @ 500µA, 10V
Operating Temperature: -65°C ~ 175°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/313
Grade: Military
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JAN2N3250A JAN2N3250A Microchip Technology 8919-lds-0093-datasheet Description: TRANS PNP 60V 0.2A TO39
Qualification: MIL-PRF-19500/323
Grade: Military
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
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JANTX2N3250A JANTX2N3250A Microchip Technology 8919-lds-0093-datasheet Description: TRANS PNP 60V 0.2A TO39
Qualification: MIL-PRF-19500/323
Grade: Military
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Packaging: Bulk
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JANS2N3439 JANS2N3439 Microchip Technology 8830-lds-0022-datasheet Description: TRANS NPN 350V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
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 Мінімальне замовлення: 50 шт
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JANS2N3439U4 Microchip Technology Description: TRANS NPN 350V 1A UA
Packaging: Bulk
Part Status: Active
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JANTX2N3439U4 Microchip Technology Description: TRANS NPN 350V 1A UA
Packaging: Bulk
Part Status: Active
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JANTXV2N3439U4 Microchip Technology Description: TRANS NPN 350V 1A UA
Packaging: Bulk
Part Status: Active
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JANS2N3439UA Microchip Technology 125353-lds-0022-3-datasheet Description: TRANS NPN 350V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
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JANTXV2N3439UA Microchip Technology 125353-lds-0022-3-datasheet Description: TRANS NPN 350V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Grade: Military
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
товару немає в наявності
 Мінімальне замовлення: 500 шт
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JANS2N3440 JANS2N3440 Microchip Technology LDS-0022_2N3439-40.pdf Description: TRANS NPN 250V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
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 Мінімальне замовлення: 500 шт
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JANS2N3440U4 Microchip Technology LDS-0022-2.pdf Description: TRANS NPN 250V 1A TO-5
Packaging: Bulk
Part Status: Active
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JANS2N3440UA Microchip Technology LDS-0022-3_2N3439UA-40UA.pdf Description: TRANS NPN 250V 1A UA
Qualification: MIL-PRF-19500/368
Grade: Military
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
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JANTX2N3440UA Microchip Technology Description: TRANS NPN 250V 1A UA
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 1 A
Part Status: Discontinued at Digi-Key
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Qualification: MIL-PRF-19500/368
Grade: Military
товару немає в наявності
 Мінімальне замовлення: 500 шт
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JAN2N3441 Microchip Technology 2N3441.PDF Description: TRANS NPN 140V 3A TO66
Grade: Military
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 140 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: TO-66 (TO-213AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 4V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Packaging: Bulk
Qualification: MIL-PRF-19500/369
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 Мінімальне замовлення: 100 шт
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JANTX2N3441 Microchip Technology Description: TRANS NPN 140V 3A TO66
Qualification: MIL-PRF-19500/369
Grade: Military
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 140 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: TO-66 (TO-213AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 4V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Packaging: Bulk
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JAN2N3442 Microchip Technology 2N3442-MIL-PRF-19500-370.pdf Description: TRANS NPN 140V 10A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
Supplier Device Package: TO-3 (TO-204AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 6 W
Qualification: MIL-PRF-19500/370
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 Мінімальне замовлення: 100 шт
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JANTXV2N3442 Microchip Technology 2N3442-MIL-PRF-19500-370.pdf Description: TRANS NPN 140V 10A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
Supplier Device Package: TO-3 (TO-204AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 6 W
Qualification: MIL-PRF-19500/370
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 Мінімальне замовлення: 100 шт
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JAN2N3584 Microchip Technology Description: TRANS NPN 250V 2A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 125mA, 1A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 10V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 2.5 W
Qualification: MIL-PRF-19500/384
товару немає в наявності
 Мінімальне замовлення: 500 шт
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JANTX2N3584 Microchip Technology Description: TRANS NPN 250V 2A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 125mA, 1A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 10V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 2.5 W
Qualification: MIL-PRF-19500/384
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 Мінімальне замовлення: 50 шт
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JANS2N3634UB Microchip Technology Description: TRANS PNP 140V 1A TO-3
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 Мінімальне замовлення: 50 шт
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JANS2N3637UB JANS2N3637UB Microchip Technology 2N3634-2N3637UB-LDS-0156-MIL-PRF-19500-357.pdf Description: TRANS PNP 175V 1A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1.5 W
Qualification: MIL-PRF-19500/357
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 Мінімальне замовлення: 50 шт
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JANTX2N3771 Microchip Technology Description: TRANS NPN 40V 30A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 6A, 30A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 4V
Supplier Device Package: TO-3 (TO-204AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 6 W
Qualification: MIL-PRF-19500/518
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 Мінімальне замовлення: 100 шт
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JAN2N3772 Microchip Technology Description: TRANS NPN 60V 20A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 4A, 20A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 10A, 4V
Supplier Device Package: TO-3 (TO-204AA)
Grade: Military
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 6 W
Qualification: MIL-PRF-19500/518
товару немає в наявності
 Мінімальне замовлення: 500 шт
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JAN2N4399 Microchip Technology 2N4399-2N5745-MIL-PRF-19500-433.pdf Description: TRANS PNP 60V 30A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 1A, 10A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V
Supplier Device Package: TO-3 (TO-204AA)
Grade: Military
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 5 W
Qualification: MIL-PRF-19500/433
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 Мінімальне замовлення: 100 шт
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JANTX2N4399 Microchip Technology 2N4399-2N5745-MIL-PRF-19500-433.pdf Description: TRANS PNP 60V 30A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 1A, 10A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V
Supplier Device Package: TO-3 (TO-204AA)
Grade: Military
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 5 W
Qualification: MIL-PRF-19500/433
товару немає в наявності
 Мінімальне замовлення: 50 шт
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JANTX1N6068A 1N6036A-1N6072A.pdf
JANTX1N6068A
Виробник: Microchip Technology
Description: TVS DIODE 145VWM 245VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.1A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 245V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500/507
товару немає в наявності
Мінімальне замовлення: 100 шт
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JAN1N6069A 8923-lds-0097-datasheet
JAN1N6069A
Виробник: Microchip Technology
Description: TVS DIODE 150VWM 261VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.7A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 261V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/507
товару немає в наявності
Мінімальне замовлення: 100 шт
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JANTX1N6069A 8923-lds-0097-datasheet
JANTX1N6069A
Виробник: Microchip Technology
Description: TVS DIODE 150VWM 261VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.7A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 261V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/507
товару немає в наявності
Мінімальне замовлення: 100 шт
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JANTX1N6072A 1N6036A-1N6072A.pdf
JANTX1N6072A
Виробник: Microchip Technology
Description: TVS DIODE 185VWM 328VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.6A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500/507
товару немає в наявності
Мінімальне замовлення: 100 шт
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JANTXV1N6314US
Виробник: Microchip Technology
Description: DIODE ZENER 3.9V 500MW MELF
товару немає в наявності
Мінімальне замовлення: 500 шт
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JANS1N6316US
Виробник: Microchip Technology
Description: DIODE ZENER 4.7V 500MW MELF
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: B, SQ-MELF
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
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JANTX1N6316US
JANTX1N6316US
Виробник: Microchip Technology
Description: DIODE ZENER 4.7V 500MW SQ-MELF
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
Qualification: MIL-PRF-19500/533
товару немає в наявності
Мінімальне замовлення: 100 шт
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JANTXV1N6316US
Виробник: Microchip Technology
Description: DIODE ZENER 4.7V 500MW MELF
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: B, SQ-MELF
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
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JAN1N6317US
Виробник: Microchip Technology
Description: DIODE ZENER 5.1V 500MW DO35
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JANS1N6317US 150_1N6309US%20thru%201N6355DUS.pdf
JANS1N6317US
Виробник: Microchip Technology
Description: DIODE ZENER 5.1V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: MIL-PRF-19500/533
на замовлення 65 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+9233.89 грн
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JANTX1N6317US 150_1N6309US%20thru%201N6355DUS.pdf
JANTX1N6317US
Виробник: Microchip Technology
Description: DIODE ZENER 5.1V 500MW SQ-MELF
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: MIL-PRF-19500/533
на замовлення 119 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1421.80 грн
100+1271.24 грн
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JANTXV1N6318 10924-lds-0193-datasheet
Виробник: Microchip Technology
Description: DIODE ZENER 5.6V 500MW DO35
товару немає в наявності
Мінімальне замовлення: 500 шт
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JANTXV1N6318US
JANTXV1N6318US
Виробник: Microchip Technology
Description: DIODE ZENER 5.6V 500MW SQ-MELF
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 2.5 V
Qualification: MIL-PRF-19500/533
товару немає в наявності
Мінімальне замовлення: 500 шт
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JANTX1N6319US
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW MELF
товару немає в наявності
Мінімальне замовлення: 500 шт
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JANTXV1N6319US
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW MELF
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Мінімальне замовлення: 500 шт
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JANTX1N6320 10924-lds-0193-datasheet
JANTX1N6320
Виробник: Microchip Technology
Description: DIODE ZENER 6.8V 500MW DO204AH
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Qualification: MIL-PRF-19500/533
товару немає в наявності
Мінімальне замовлення: 500 шт
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JANTX1N6320US
Виробник: Microchip Technology
Description: DIODE ZENER 6.8V 500MW MELF
товару немає в наявності
Мінімальне замовлення: 500 шт
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JANTX1N6490 122691-lds-0183-datasheet
Виробник: Microchip Technology
Description: DIODE ZENER 5.1V 1.5W D5A
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JANTX1N6661 11106-sd87a-datasheet
JANTX1N6661
Виробник: Microchip Technology
Description: DIODE STD 225V 500MA DO204AH
Qualification: MIL-PRF-19500/587
Grade: Military
Current - Reverse Leakage @ Vr: 50 nA @ 225 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Voltage - DC Reverse (Vr) (Max): 225 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AH (DO-35)
Current - Average Rectified (Io): 500mA
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Bulk
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JANTXV1N6661US 11107-sd88a-datasheet
JANTXV1N6661US
Виробник: Microchip Technology
Description: DIODE GEN PURP 225V 500MA D-5A
Qualification: MIL-PRF-19500/587
Current - Reverse Leakage @ Vr: 50 nA @ 225 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Voltage - DC Reverse (Vr) (Max): 225 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 500mA
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
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JAN1N937B-1 5912-1n935-938b-datasheet
JAN1N937B-1
Виробник: Microchip Technology
Description: DIODE ZENER 9V 500MW DO35
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 9 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Qualification: MIL-PRF-19500/156
Grade: Military
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JAN1N937BUR-1
JAN1N937BUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 9V 500MW DO35
Qualification: MIL-PRF-19500/156
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Power - Max: 500 mW
Grade: Military
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 9 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
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JANTX1N937BUR-1
JANTX1N937BUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 9V 500MW DO35
Qualification: MIL-PRF-19500/156
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Power - Max: 500 mW
Grade: Military
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 9 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
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JAN1N938B-1 5912-1n935-938b-datasheet
JAN1N938B-1
Виробник: Microchip Technology
Description: DIODE ZENER 9V 500MW DO35
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 9 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Qualification: MIL-PRF-19500/156
Grade: Military
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JANS1N938B-1 5912-1n935-938b-datasheet
JANS1N938B-1
Виробник: Microchip Technology
Description: DIODE ZENER 9V 500MW DO35
Qualification: MIL-PRF-19500/156
Grade: Military
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 9 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
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JANTX1N938B-1 5912-1n935-938b-datasheet
JANTX1N938B-1
Виробник: Microchip Technology
Description: DIODE ZENER 9V 500MW DO35
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 9 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Qualification: MIL-PRF-19500/156
Grade: Military
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JANS1N938BUR-1
JANS1N938BUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 9V 500MW DO35
Qualification: MIL-PRF-19500/156
Grade: Military
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 9 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
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JANTX1N938BUR-1
JANTX1N938BUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 9V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Qualification: MIL-PRF-19500/156
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JAN2N1613 2N718A-2N1613-LDS-0200-MIL-PRF-19500-181.pdf
JAN2N1613
Виробник: Microchip Technology
Description: TRANS NPN 30V 0.5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/181
товару немає в наявності
Мінімальне замовлення: 100 шт
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JAN2N1711
Виробник: Microchip Technology
Description: TRANS NPN 30V 0.5A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5
Grade: Military
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/225
товару немає в наявності
Мінімальне замовлення: 500 шт
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JANTX2N1711 2N1711-2N1890-MIL-PRF-19500-225.PDF
Виробник: Microchip Technology
Description: TRANS NPN 30V 0.5A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/225
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+4770.62 грн
100+4265.95 грн
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JANTX2N2369AU 8893-lds-0057-datasheet
JANTX2N2369AU
Виробник: Microchip Technology
Description: TRANS NPN 15V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: U1 (SMD-1)
Grade: Military
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/317
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JAN2N2432 6026-2n2432-datasheet
JAN2N2432
Виробник: Microchip Technology
Description: TRANS NPN 30V 0.1A TO18
Qualification: MIL-PRF-19500/313
Grade: Military
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Current - Collector Cutoff (Max): 10nA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Operating Temperature: -65°C ~ 175°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
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JANTX2N2432 6026-2n2432-datasheet
JANTX2N2432
Виробник: Microchip Technology
Description: TRANS NPN 30V 0.1A TO18
Qualification: MIL-PRF-19500/313
Grade: Military
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Current - Collector Cutoff (Max): 10nA
Vce Saturation (Max) @ Ib, Ic: 0.15mV @ 500µA, 10V
Operating Temperature: -65°C ~ 175°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
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JAN2N2432A 6026-2n2432-datasheet
JAN2N2432A
Виробник: Microchip Technology
Description: TRANS NPN 45V 0.1A TO18
Qualification: MIL-PRF-19500/313
Grade: Military
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Current - Collector Cutoff (Max): 10nA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Operating Temperature: -65°C ~ 175°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
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JANTX2N2432A 6026-2n2432-datasheet
JANTX2N2432A
Виробник: Microchip Technology
Description: TRANS NPN 45V 0.1A TO18
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Current - Collector Cutoff (Max): 10nA
Vce Saturation (Max) @ Ib, Ic: 0.15mV @ 500µA, 10V
Operating Temperature: -65°C ~ 175°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/313
Grade: Military
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JAN2N3250A 8919-lds-0093-datasheet
JAN2N3250A
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.2A TO39
Qualification: MIL-PRF-19500/323
Grade: Military
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
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JANTX2N3250A 8919-lds-0093-datasheet
JANTX2N3250A
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.2A TO39
Qualification: MIL-PRF-19500/323
Grade: Military
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Packaging: Bulk
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JANS2N3439 8830-lds-0022-datasheet
JANS2N3439
Виробник: Microchip Technology
Description: TRANS NPN 350V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
товару немає в наявності
Мінімальне замовлення: 50 шт
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JANS2N3439U4
Виробник: Microchip Technology
Description: TRANS NPN 350V 1A UA
Packaging: Bulk
Part Status: Active
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JANTX2N3439U4
Виробник: Microchip Technology
Description: TRANS NPN 350V 1A UA
Packaging: Bulk
Part Status: Active
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JANTXV2N3439U4
Виробник: Microchip Technology
Description: TRANS NPN 350V 1A UA
Packaging: Bulk
Part Status: Active
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JANS2N3439UA 125353-lds-0022-3-datasheet
Виробник: Microchip Technology
Description: TRANS NPN 350V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
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JANTXV2N3439UA 125353-lds-0022-3-datasheet
Виробник: Microchip Technology
Description: TRANS NPN 350V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Grade: Military
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
товару немає в наявності
Мінімальне замовлення: 500 шт
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JANS2N3440 LDS-0022_2N3439-40.pdf
JANS2N3440
Виробник: Microchip Technology
Description: TRANS NPN 250V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
товару немає в наявності
Мінімальне замовлення: 500 шт
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JANS2N3440U4 LDS-0022-2.pdf
Виробник: Microchip Technology
Description: TRANS NPN 250V 1A TO-5
Packaging: Bulk
Part Status: Active
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JANS2N3440UA LDS-0022-3_2N3439UA-40UA.pdf
Виробник: Microchip Technology
Description: TRANS NPN 250V 1A UA
Qualification: MIL-PRF-19500/368
Grade: Military
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
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JANTX2N3440UA
Виробник: Microchip Technology
Description: TRANS NPN 250V 1A UA
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 1 A
Part Status: Discontinued at Digi-Key
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Qualification: MIL-PRF-19500/368
Grade: Military
товару немає в наявності
Мінімальне замовлення: 500 шт
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JAN2N3441 2N3441.PDF
Виробник: Microchip Technology
Description: TRANS NPN 140V 3A TO66
Grade: Military
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 140 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: TO-66 (TO-213AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 4V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Packaging: Bulk
Qualification: MIL-PRF-19500/369
товару немає в наявності
Мінімальне замовлення: 100 шт
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JANTX2N3441
Виробник: Microchip Technology
Description: TRANS NPN 140V 3A TO66
Qualification: MIL-PRF-19500/369
Grade: Military
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 140 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: TO-66 (TO-213AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 4V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Packaging: Bulk
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JAN2N3442 2N3442-MIL-PRF-19500-370.pdf
Виробник: Microchip Technology
Description: TRANS NPN 140V 10A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
Supplier Device Package: TO-3 (TO-204AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 6 W
Qualification: MIL-PRF-19500/370
товару немає в наявності
Мінімальне замовлення: 100 шт
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JANTXV2N3442 2N3442-MIL-PRF-19500-370.pdf
Виробник: Microchip Technology
Description: TRANS NPN 140V 10A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
Supplier Device Package: TO-3 (TO-204AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 6 W
Qualification: MIL-PRF-19500/370
товару немає в наявності
Мінімальне замовлення: 100 шт
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JAN2N3584
Виробник: Microchip Technology
Description: TRANS NPN 250V 2A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 125mA, 1A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 10V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 2.5 W
Qualification: MIL-PRF-19500/384
товару немає в наявності
Мінімальне замовлення: 500 шт
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JANTX2N3584
Виробник: Microchip Technology
Description: TRANS NPN 250V 2A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 125mA, 1A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 10V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 2.5 W
Qualification: MIL-PRF-19500/384
товару немає в наявності
Мінімальне замовлення: 50 шт
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JANS2N3634UB
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A TO-3
товару немає в наявності
Мінімальне замовлення: 50 шт
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JANS2N3637UB 2N3634-2N3637UB-LDS-0156-MIL-PRF-19500-357.pdf
JANS2N3637UB
Виробник: Microchip Technology
Description: TRANS PNP 175V 1A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1.5 W
Qualification: MIL-PRF-19500/357
товару немає в наявності
Мінімальне замовлення: 50 шт
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JANTX2N3771
Виробник: Microchip Technology
Description: TRANS NPN 40V 30A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 6A, 30A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 4V
Supplier Device Package: TO-3 (TO-204AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 6 W
Qualification: MIL-PRF-19500/518
товару немає в наявності
Мінімальне замовлення: 100 шт
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JAN2N3772
Виробник: Microchip Technology
Description: TRANS NPN 60V 20A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 4A, 20A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 10A, 4V
Supplier Device Package: TO-3 (TO-204AA)
Grade: Military
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 6 W
Qualification: MIL-PRF-19500/518
товару немає в наявності
Мінімальне замовлення: 500 шт
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JAN2N4399 2N4399-2N5745-MIL-PRF-19500-433.pdf
Виробник: Microchip Technology
Description: TRANS PNP 60V 30A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 1A, 10A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V
Supplier Device Package: TO-3 (TO-204AA)
Grade: Military
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 5 W
Qualification: MIL-PRF-19500/433
товару немає в наявності
Мінімальне замовлення: 100 шт
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JANTX2N4399 2N4399-2N5745-MIL-PRF-19500-433.pdf
Виробник: Microchip Technology
Description: TRANS PNP 60V 30A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 1A, 10A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V
Supplier Device Package: TO-3 (TO-204AA)
Grade: Military
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 5 W
Qualification: MIL-PRF-19500/433
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
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