Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (343064) > Сторінка 1001 з 5718
| Фото | Назва | Виробник | Інформація |
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| JANTX1N6060A | Microchip Technology |
 Description: TVS DIODE 64VWM 103VC DO13 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
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JAN1N6061A | Microchip Technology |
Description: TVS DIODE 70VWM 113VC DO13 Packaging: Bulk Package / Case: DO-202AA, DO-13, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 13.3A Voltage - Reverse Standoff (Typ): 70V Supplier Device Package: DO-13 (DO-202AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 77.9V Voltage - Clamping (Max) @ Ipp: 113V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500/507 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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JANTX1N6061A | Microchip Technology |
Description: TVS DIODE 70VWM 113VC DO13 Packaging: Bulk Package / Case: DO-202AA, DO-13, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 13.3A Voltage - Reverse Standoff (Typ): 70V Supplier Device Package: DO-13 (DO-202AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 77.9V Voltage - Clamping (Max) @ Ipp: 113V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500/507 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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JANTXV1N6063A | Microchip Technology |
Description: TVS DIODE 82VWM 137VC DO13 Packaging: Bulk Package / Case: DO-202AA, DO-13, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 11A Voltage - Reverse Standoff (Typ): 82V Supplier Device Package: DO-13 (DO-202AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 95V Voltage - Clamping (Max) @ Ipp: 137V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500/507 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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JANTX1N6065A | Microchip Technology |
Description: TVS DIODE 100VWM 168VC DO13 Packaging: Bulk Package / Case: DO-202AA, DO-13, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 8.9A Voltage - Reverse Standoff (Typ): 100V Supplier Device Package: DO-13 (DO-202AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 114V Voltage - Clamping (Max) @ Ipp: 168V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500/507 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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JANTX1N6068A | Microchip Technology |
Description: TVS DIODE 145VWM 245VC DO13 Packaging: Bulk Package / Case: DO-202AA, DO-13, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 6.1A Voltage - Reverse Standoff (Typ): 145V Supplier Device Package: DO-13 (DO-202AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 162V Voltage - Clamping (Max) @ Ipp: 245V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500/507 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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JAN1N6069A | Microchip Technology |
Description: TVS DIODE 150VWM 261VC DO13 Packaging: Bulk Package / Case: DO-202AA, DO-13, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 5.7A Voltage - Reverse Standoff (Typ): 150V Supplier Device Package: DO-13 (DO-202AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 171V Voltage - Clamping (Max) @ Ipp: 261V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500/507 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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JANTX1N6069A | Microchip Technology |
Description: TVS DIODE 150VWM 261VC DO13 Packaging: Bulk Package / Case: DO-202AA, DO-13, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 5.7A Voltage - Reverse Standoff (Typ): 150V Supplier Device Package: DO-13 (DO-202AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 171V Voltage - Clamping (Max) @ Ipp: 261V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500/507 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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JANTX1N6072A | Microchip Technology |
Description: TVS DIODE 185VWM 328VC DO13 Packaging: Bulk Package / Case: DO-202AA, DO-13, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 4.6A Voltage - Reverse Standoff (Typ): 185V Supplier Device Package: DO-13 (DO-202AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 209V Voltage - Clamping (Max) @ Ipp: 328V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500/507 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
| JANTXV1N6314US | Microchip Technology | Description: DIODE ZENER 3.9V 500MW MELF |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| JANS1N6316US | Microchip Technology |
Description: DIODE ZENER 4.7V 500MW MELF Tolerance: ±5% Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 4.7 V Impedance (Max) (Zzt): 17 Ohms Supplier Device Package: B, SQ-MELF Part Status: Discontinued at Digi-Key Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||
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JANTX1N6316US | Microchip Technology |
Description: DIODE ZENER 4.7V 500MW SQ-MELF Tolerance: ±5% Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 4.7 V Impedance (Max) (Zzt): 17 Ohms Supplier Device Package: B, SQ-MELF Grade: Military Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V Qualification: MIL-PRF-19500/533 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
| JANTXV1N6316US | Microchip Technology |
Description: DIODE ZENER 4.7V 500MW MELF Tolerance: ±5% Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 4.7 V Impedance (Max) (Zzt): 17 Ohms Supplier Device Package: B, SQ-MELF Part Status: Discontinued at Digi-Key Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| JAN1N6317US | Microchip Technology | Description: DIODE ZENER 5.1V 500MW DO35 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
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JANS1N6317US | Microchip Technology |
Description: DIODE ZENER 5.1V 500MW DO35 Tolerance: ±5% Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 14 Ohms Supplier Device Package: B, SQ-MELF Grade: Military Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 2 V Qualification: MIL-PRF-19500/533 |
на замовлення 65 шт: термін постачання 21-31 дні (днів) |
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JANTX1N6317US | Microchip Technology |
Description: DIODE ZENER 5.1V 500MW SQ-MELF Tolerance: ±5% Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 14 Ohms Supplier Device Package: B, SQ-MELF Grade: Military Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 2 V Qualification: MIL-PRF-19500/533 |
на замовлення 119 шт: термін постачання 21-31 дні (днів) |
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| JANTXV1N6318 | Microchip Technology |
Description: DIODE ZENER 5.6V 500MW DO35 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
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JANTXV1N6318US | Microchip Technology |
Description: DIODE ZENER 5.6V 500MW SQ-MELF Tolerance: ±5% Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: B, SQ-MELF Grade: Military Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 2.5 V Qualification: MIL-PRF-19500/533 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
| JANTX1N6319US | Microchip Technology | Description: DIODE ZENER 6.2V 500MW MELF |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| JANTXV1N6319US | Microchip Technology | Description: DIODE ZENER 6.2V 500MW MELF |
товару немає в наявності |
В кошику од. на суму грн. | |||||
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JANTX1N6320 | Microchip Technology |
Description: DIODE ZENER 6.8V 500MW DO204AH Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 3 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Military Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 4 V Qualification: MIL-PRF-19500/533 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
| JANTX1N6320US | Microchip Technology | Description: DIODE ZENER 6.8V 500MW MELF |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| JANTX1N6490 | Microchip Technology |
Description: DIODE ZENER 5.1V 1.5W D5A |
товару немає в наявності |
В кошику од. на суму грн. | |||||
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JANTX1N6661 | Microchip Technology |
Description: DIODE STD 225V 500MA DO204AH Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Part Status: Active Voltage - DC Reverse (Vr) (Max): 225 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA Current - Reverse Leakage @ Vr: 50 nA @ 225 V Qualification: MIL-PRF-19500/587 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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JANTXV1N6661US | Microchip Technology |
Description: DIODE GEN PURP 225V 500MA D-5A Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 225 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA Current - Reverse Leakage @ Vr: 50 nA @ 225 V Qualification: MIL-PRF-19500/587 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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JAN1N937B-1 | Microchip Technology |
Description: DIODE ZENER 9V 500MW DO35 Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 9 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Military Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 10 µA @ 6 V Qualification: MIL-PRF-19500/156 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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JAN1N937BUR-1 | Microchip Technology |
Description: DIODE ZENER 9V 500MW DO35 Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 9 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-35 Grade: Military Power - Max: 500 mW Current - Reverse Leakage @ Vr: 10 µA @ 6 V Qualification: MIL-PRF-19500/156 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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JANTX1N937BUR-1 | Microchip Technology |
Description: DIODE ZENER 9V 500MW DO35 Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 9 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-35 Grade: Military Power - Max: 500 mW Current - Reverse Leakage @ Vr: 10 µA @ 6 V Qualification: MIL-PRF-19500/156 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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JAN1N938B-1 | Microchip Technology |
Description: DIODE ZENER 9V 500MW DO35 Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 9 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Military Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 10 µA @ 6 V Qualification: MIL-PRF-19500/156 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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JANS1N938B-1 | Microchip Technology |
Description: DIODE ZENER 9V 500MW DO35 Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 9 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Military Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 10 µA @ 6 V Qualification: MIL-PRF-19500/156 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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JANTX1N938B-1 | Microchip Technology |
Description: DIODE ZENER 9V 500MW DO35 Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 9 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Military Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 10 µA @ 6 V Qualification: MIL-PRF-19500/156 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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JANS1N938BUR-1 | Microchip Technology |
Description: DIODE ZENER 9V 500MW DO35 Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 9 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Military Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 10 µA @ 6 V Qualification: MIL-PRF-19500/156 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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JANTX1N938BUR-1 | Microchip Technology |
Description: DIODE ZENER 9V 500MW DO35 Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 9 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Military Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 10 µA @ 6 V Qualification: MIL-PRF-19500/156 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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JAN2N1613 | Microchip Technology |
Description: TRANS NPN 30V 0.5A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 800 mW Qualification: MIL-PRF-19500/181 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
| JAN2N1711 | Microchip Technology |
Description: TRANS NPN 30V 0.5A TO-5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-5 Grade: Military Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 800 mW Qualification: MIL-PRF-19500/225 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| JANTX2N1711 | Microchip Technology |
Description: TRANS NPN 30V 0.5A TO-5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-5 Grade: Military Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 800 mW Qualification: MIL-PRF-19500/225 |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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~U1~3.JPG "JANTX2N2369AU") |
JANTX2N2369AU | Microchip Technology |
Description: TRANS NPN 15V UB Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Supplier Device Package: U1 (SMD-1) Grade: Military Part Status: Active Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 500 mW Qualification: MIL-PRF-19500/317 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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JAN2N2432 | Microchip Technology |
Description: TRANS NPN 30V 0.1A TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V Supplier Device Package: TO-18 (TO-206AA) Grade: Military Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 360 mW Qualification: MIL-PRF-19500/313 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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JANTX2N2432 | Microchip Technology |
Description: TRANS NPN 30V 0.1A TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 0.15mV @ 500µA, 10V Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V Supplier Device Package: TO-18 (TO-206AA) Grade: Military Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 300 mW Qualification: MIL-PRF-19500/313 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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JAN2N2432A | Microchip Technology |
Description: TRANS NPN 45V 0.1A TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V Supplier Device Package: TO-18 (TO-206AA) Grade: Military Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 360 mW Qualification: MIL-PRF-19500/313 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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JANTX2N2432A | Microchip Technology |
Description: TRANS NPN 45V 0.1A TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 0.15mV @ 500µA, 10V Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V Supplier Device Package: TO-18 (TO-206AA) Grade: Military Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 300 mW Qualification: MIL-PRF-19500/313 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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JAN2N3250A | Microchip Technology |
Description: TRANS PNP 60V 0.2A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 360 mW Qualification: MIL-PRF-19500/323 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
JANTX2N3250A | Microchip Technology |
Description: TRANS PNP 60V 0.2A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 360 mW Qualification: MIL-PRF-19500/323 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
JANS2N3439 | Microchip Technology |
Description: TRANS NPN 350V 1A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 800 mW Qualification: MIL-PRF-19500/368 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
| JANS2N3439U4 | Microchip Technology |
Description: TRANS NPN 350V 1A UA Packaging: Bulk Part Status: Active |
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В кошику од. на суму грн. | |||||
| JANTX2N3439U4 | Microchip Technology |
Description: TRANS NPN 350V 1A UA Packaging: Bulk Part Status: Active |
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В кошику од. на суму грн. | |||||
| JANTXV2N3439U4 | Microchip Technology |
Description: TRANS NPN 350V 1A UA Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| JANS2N3439UA | Microchip Technology |
Description: TRANS NPN 350V 1A UA Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: UA Grade: Military Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 800 mW Qualification: MIL-PRF-19500/368 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| JANTXV2N3439UA | Microchip Technology |
Description: TRANS NPN 350V 1A UA Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: UA Grade: Military Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 800 mW Qualification: MIL-PRF-19500/368 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
|
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JANS2N3440 | Microchip Technology |
Description: TRANS NPN 250V 1A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW Qualification: MIL-PRF-19500/368 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
| JANS2N3440U4 | Microchip Technology |
Description: TRANS NPN 250V 1A TO-5 Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| JANS2N3440UA | Microchip Technology |
Description: TRANS NPN 250V 1A UA Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: UA Grade: Military Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW Qualification: MIL-PRF-19500/368 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| JANTX2N3440UA | Microchip Technology |
Description: TRANS NPN 250V 1A UA Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: UA Grade: Military Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW Qualification: MIL-PRF-19500/368 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| JAN2N3441 | Microchip Technology |
Description: TRANS NPN 140V 3A TO66 Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 4V Supplier Device Package: TO-66 (TO-213AA) Grade: Military Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 3 W Qualification: MIL-PRF-19500/369 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| JANTX2N3441 | Microchip Technology |
Description: TRANS NPN 140V 3A TO66 Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 4V Supplier Device Package: TO-66 (TO-213AA) Grade: Military Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 3 W Qualification: MIL-PRF-19500/369 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| JAN2N3442 | Microchip Technology |
Description: TRANS NPN 140V 10A TO3 Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V Supplier Device Package: TO-3 (TO-204AA) Grade: Military Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 6 W Qualification: MIL-PRF-19500/370 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| JANTXV2N3442 | Microchip Technology |
Description: TRANS NPN 140V 10A TO3 Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V Supplier Device Package: TO-3 (TO-204AA) Grade: Military Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 6 W Qualification: MIL-PRF-19500/370 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| JAN2N3584 | Microchip Technology |
Description: TRANS NPN 250V 2A TO66 Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 125mA, 1A Current - Collector Cutoff (Max): 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 10V Supplier Device Package: TO-66 (TO-213AA) Grade: Military Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 2.5 W Qualification: MIL-PRF-19500/384 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| JANTX2N3584 | Microchip Technology |
Description: TRANS NPN 250V 2A TO66 Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 125mA, 1A Current - Collector Cutoff (Max): 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 10V Supplier Device Package: TO-66 (TO-213AA) Grade: Military Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 2.5 W Qualification: MIL-PRF-19500/384 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| JANS2N3634UB | Microchip Technology | Description: TRANS PNP 140V 1A TO-3 |
товару немає в наявності |
В кошику од. на суму грн. |
| JANTX1N6060A |
|
Виробник: Microchip Technology
Description: TVS DIODE 64VWM 103VC DO13
Description: TVS DIODE 64VWM 103VC DO13
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В кошику
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| JAN1N6061A |
|
Виробник: Microchip Technology
Description: TVS DIODE 70VWM 113VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.3A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/507
Description: TVS DIODE 70VWM 113VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.3A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/507
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В кошику
од. на суму грн.
| JANTX1N6061A |
|
Виробник: Microchip Technology
Description: TVS DIODE 70VWM 113VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.3A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/507
Description: TVS DIODE 70VWM 113VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.3A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/507
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В кошику
од. на суму грн.
| JANTXV1N6063A |
|
Виробник: Microchip Technology
Description: TVS DIODE 82VWM 137VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11A
Voltage - Reverse Standoff (Typ): 82V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/507
Description: TVS DIODE 82VWM 137VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11A
Voltage - Reverse Standoff (Typ): 82V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/507
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В кошику
од. на суму грн.
| JANTX1N6065A |
|
Виробник: Microchip Technology
Description: TVS DIODE 100VWM 168VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.9A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 114V
Voltage - Clamping (Max) @ Ipp: 168V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500/507
Description: TVS DIODE 100VWM 168VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.9A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 114V
Voltage - Clamping (Max) @ Ipp: 168V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500/507
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В кошику
од. на суму грн.
| JANTX1N6068A |
|
Виробник: Microchip Technology
Description: TVS DIODE 145VWM 245VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.1A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 245V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500/507
Description: TVS DIODE 145VWM 245VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.1A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 245V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500/507
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В кошику
од. на суму грн.
| JAN1N6069A |
|
Виробник: Microchip Technology
Description: TVS DIODE 150VWM 261VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.7A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 261V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/507
Description: TVS DIODE 150VWM 261VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.7A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 261V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/507
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В кошику
од. на суму грн.
| JANTX1N6069A |
|
Виробник: Microchip Technology
Description: TVS DIODE 150VWM 261VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.7A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 261V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/507
Description: TVS DIODE 150VWM 261VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.7A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 261V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/507
товару немає в наявності
В кошику
од. на суму грн.
| JANTX1N6072A |
|
Виробник: Microchip Technology
Description: TVS DIODE 185VWM 328VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.6A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500/507
Description: TVS DIODE 185VWM 328VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.6A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500/507
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В кошику
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| JANTXV1N6314US |
Виробник: Microchip Technology
Description: DIODE ZENER 3.9V 500MW MELF
Description: DIODE ZENER 3.9V 500MW MELF
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В кошику
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| JANS1N6316US |
Виробник: Microchip Technology
Description: DIODE ZENER 4.7V 500MW MELF
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: B, SQ-MELF
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
Description: DIODE ZENER 4.7V 500MW MELF
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: B, SQ-MELF
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
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| JANTX1N6316US |
Виробник: Microchip Technology
Description: DIODE ZENER 4.7V 500MW SQ-MELF
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
Qualification: MIL-PRF-19500/533
Description: DIODE ZENER 4.7V 500MW SQ-MELF
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
Qualification: MIL-PRF-19500/533
товару немає в наявності
В кошику
од. на суму грн.
| JANTXV1N6316US |
Виробник: Microchip Technology
Description: DIODE ZENER 4.7V 500MW MELF
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: B, SQ-MELF
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
Description: DIODE ZENER 4.7V 500MW MELF
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: B, SQ-MELF
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
товару немає в наявності
В кошику
од. на суму грн.
| JAN1N6317US |
Виробник: Microchip Technology
Description: DIODE ZENER 5.1V 500MW DO35
Description: DIODE ZENER 5.1V 500MW DO35
товару немає в наявності
В кошику
од. на суму грн.
| JANS1N6317US |
|
Виробник: Microchip Technology
Description: DIODE ZENER 5.1V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: MIL-PRF-19500/533
Description: DIODE ZENER 5.1V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: MIL-PRF-19500/533
на замовлення 65 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 9733.14 грн |
| JANTX1N6317US |
|
Виробник: Microchip Technology
Description: DIODE ZENER 5.1V 500MW SQ-MELF
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: MIL-PRF-19500/533
Description: DIODE ZENER 5.1V 500MW SQ-MELF
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: MIL-PRF-19500/533
на замовлення 119 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1498.67 грн |
| 100+ | 1339.97 грн |
| JANTXV1N6318 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 5.6V 500MW DO35
Description: DIODE ZENER 5.6V 500MW DO35
товару немає в наявності
В кошику
од. на суму грн.
| JANTXV1N6318US |
Виробник: Microchip Technology
Description: DIODE ZENER 5.6V 500MW SQ-MELF
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 2.5 V
Qualification: MIL-PRF-19500/533
Description: DIODE ZENER 5.6V 500MW SQ-MELF
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 2.5 V
Qualification: MIL-PRF-19500/533
товару немає в наявності
В кошику
од. на суму грн.
| JANTX1N6319US |
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW MELF
Description: DIODE ZENER 6.2V 500MW MELF
товару немає в наявності
В кошику
од. на суму грн.
| JANTXV1N6319US |
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW MELF
Description: DIODE ZENER 6.2V 500MW MELF
товару немає в наявності
В кошику
од. на суму грн.
| JANTX1N6320 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 6.8V 500MW DO204AH
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Qualification: MIL-PRF-19500/533
Description: DIODE ZENER 6.8V 500MW DO204AH
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Qualification: MIL-PRF-19500/533
товару немає в наявності
В кошику
од. на суму грн.
| JANTX1N6320US |
Виробник: Microchip Technology
Description: DIODE ZENER 6.8V 500MW MELF
Description: DIODE ZENER 6.8V 500MW MELF
товару немає в наявності
В кошику
од. на суму грн.
| JANTX1N6490 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 5.1V 1.5W D5A
Description: DIODE ZENER 5.1V 1.5W D5A
товару немає в наявності
В кошику
од. на суму грн.
| JANTX1N6661 |
|
Виробник: Microchip Technology
Description: DIODE STD 225V 500MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 225 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 50 nA @ 225 V
Qualification: MIL-PRF-19500/587
Description: DIODE STD 225V 500MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 225 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 50 nA @ 225 V
Qualification: MIL-PRF-19500/587
товару немає в наявності
В кошику
од. на суму грн.
| JANTXV1N6661US |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 225V 500MA D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 225 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 50 nA @ 225 V
Qualification: MIL-PRF-19500/587
Description: DIODE GEN PURP 225V 500MA D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 225 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 50 nA @ 225 V
Qualification: MIL-PRF-19500/587
товару немає в наявності
В кошику
од. на суму грн.
| JAN1N937B-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 9V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Qualification: MIL-PRF-19500/156
Description: DIODE ZENER 9V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Qualification: MIL-PRF-19500/156
товару немає в наявності
В кошику
од. на суму грн.
| JAN1N937BUR-1 |
Виробник: Microchip Technology
Description: DIODE ZENER 9V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-35
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Qualification: MIL-PRF-19500/156
Description: DIODE ZENER 9V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-35
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Qualification: MIL-PRF-19500/156
товару немає в наявності
В кошику
од. на суму грн.
| JANTX1N937BUR-1 |
Виробник: Microchip Technology
Description: DIODE ZENER 9V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-35
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Qualification: MIL-PRF-19500/156
Description: DIODE ZENER 9V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-35
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Qualification: MIL-PRF-19500/156
товару немає в наявності
В кошику
од. на суму грн.
| JAN1N938B-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 9V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Qualification: MIL-PRF-19500/156
Description: DIODE ZENER 9V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Qualification: MIL-PRF-19500/156
товару немає в наявності
В кошику
од. на суму грн.
| JANS1N938B-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 9V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Qualification: MIL-PRF-19500/156
Description: DIODE ZENER 9V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Qualification: MIL-PRF-19500/156
товару немає в наявності
В кошику
од. на суму грн.
| JANTX1N938B-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 9V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Qualification: MIL-PRF-19500/156
Description: DIODE ZENER 9V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Qualification: MIL-PRF-19500/156
товару немає в наявності
В кошику
од. на суму грн.
| JANS1N938BUR-1 |
Виробник: Microchip Technology
Description: DIODE ZENER 9V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Qualification: MIL-PRF-19500/156
Description: DIODE ZENER 9V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Qualification: MIL-PRF-19500/156
товару немає в наявності
В кошику
од. на суму грн.
| JANTX1N938BUR-1 |
Виробник: Microchip Technology
Description: DIODE ZENER 9V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Qualification: MIL-PRF-19500/156
Description: DIODE ZENER 9V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Qualification: MIL-PRF-19500/156
товару немає в наявності
В кошику
од. на суму грн.
| JAN2N1613 |
|
Виробник: Microchip Technology
Description: TRANS NPN 30V 0.5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/181
Description: TRANS NPN 30V 0.5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/181
товару немає в наявності
В кошику
од. на суму грн.
| JAN2N1711 |
Виробник: Microchip Technology
Description: TRANS NPN 30V 0.5A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5
Grade: Military
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/225
Description: TRANS NPN 30V 0.5A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5
Grade: Military
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/225
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| JANTX2N1711 |
|
Виробник: Microchip Technology
Description: TRANS NPN 30V 0.5A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/225
Description: TRANS NPN 30V 0.5A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/225
на замовлення 100 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 5069.77 грн |
| 100+ | 4533.34 грн |
| JANTX2N2369AU |
|
Виробник: Microchip Technology
Description: TRANS NPN 15V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: U1 (SMD-1)
Grade: Military
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/317
Description: TRANS NPN 15V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: U1 (SMD-1)
Grade: Military
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/317
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В кошику
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| JAN2N2432 |
|
Виробник: Microchip Technology
Description: TRANS NPN 30V 0.1A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 360 mW
Qualification: MIL-PRF-19500/313
Description: TRANS NPN 30V 0.1A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 360 mW
Qualification: MIL-PRF-19500/313
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В кошику
од. на суму грн.
| JANTX2N2432 |
|
Виробник: Microchip Technology
Description: TRANS NPN 30V 0.1A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 0.15mV @ 500µA, 10V
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
Qualification: MIL-PRF-19500/313
Description: TRANS NPN 30V 0.1A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 0.15mV @ 500µA, 10V
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
Qualification: MIL-PRF-19500/313
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В кошику
од. на суму грн.
| JAN2N2432A |
|
Виробник: Microchip Technology
Description: TRANS NPN 45V 0.1A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 360 mW
Qualification: MIL-PRF-19500/313
Description: TRANS NPN 45V 0.1A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 360 mW
Qualification: MIL-PRF-19500/313
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В кошику
од. на суму грн.
| JANTX2N2432A |
|
Виробник: Microchip Technology
Description: TRANS NPN 45V 0.1A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 0.15mV @ 500µA, 10V
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Qualification: MIL-PRF-19500/313
Description: TRANS NPN 45V 0.1A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 0.15mV @ 500µA, 10V
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Qualification: MIL-PRF-19500/313
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В кошику
од. на суму грн.
| JAN2N3250A |
|
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
Qualification: MIL-PRF-19500/323
Description: TRANS PNP 60V 0.2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
Qualification: MIL-PRF-19500/323
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В кошику
од. на суму грн.
| JANTX2N3250A |
|
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
Qualification: MIL-PRF-19500/323
Description: TRANS PNP 60V 0.2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
Qualification: MIL-PRF-19500/323
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В кошику
од. на суму грн.
| JANS2N3439 |
|
Виробник: Microchip Technology
Description: TRANS NPN 350V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
Description: TRANS NPN 350V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
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В кошику
од. на суму грн.
| JANS2N3439UA |
|
Виробник: Microchip Technology
Description: TRANS NPN 350V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
Description: TRANS NPN 350V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
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| JANTXV2N3439UA |
|
Виробник: Microchip Technology
Description: TRANS NPN 350V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Grade: Military
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
Description: TRANS NPN 350V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Grade: Military
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
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од. на суму грн.
| JANS2N3440 |
|
Виробник: Microchip Technology
Description: TRANS NPN 250V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
Description: TRANS NPN 250V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
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В кошику
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| JANS2N3440UA |
|
Виробник: Microchip Technology
Description: TRANS NPN 250V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
Description: TRANS NPN 250V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
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од. на суму грн.
| JANTX2N3440UA |
Виробник: Microchip Technology
Description: TRANS NPN 250V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Grade: Military
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
Description: TRANS NPN 250V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Grade: Military
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
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| JAN2N3441 |
|
Виробник: Microchip Technology
Description: TRANS NPN 140V 3A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 4V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 3 W
Qualification: MIL-PRF-19500/369
Description: TRANS NPN 140V 3A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 4V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 3 W
Qualification: MIL-PRF-19500/369
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| JANTX2N3441 |
Виробник: Microchip Technology
Description: TRANS NPN 140V 3A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 4V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 3 W
Qualification: MIL-PRF-19500/369
Description: TRANS NPN 140V 3A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 4V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 3 W
Qualification: MIL-PRF-19500/369
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| JAN2N3442 |
|
Виробник: Microchip Technology
Description: TRANS NPN 140V 10A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
Supplier Device Package: TO-3 (TO-204AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 6 W
Qualification: MIL-PRF-19500/370
Description: TRANS NPN 140V 10A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
Supplier Device Package: TO-3 (TO-204AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 6 W
Qualification: MIL-PRF-19500/370
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| JANTXV2N3442 |
|
Виробник: Microchip Technology
Description: TRANS NPN 140V 10A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
Supplier Device Package: TO-3 (TO-204AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 6 W
Qualification: MIL-PRF-19500/370
Description: TRANS NPN 140V 10A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
Supplier Device Package: TO-3 (TO-204AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 6 W
Qualification: MIL-PRF-19500/370
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од. на суму грн.
| JAN2N3584 |
Виробник: Microchip Technology
Description: TRANS NPN 250V 2A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 125mA, 1A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 10V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 2.5 W
Qualification: MIL-PRF-19500/384
Description: TRANS NPN 250V 2A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 125mA, 1A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 10V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 2.5 W
Qualification: MIL-PRF-19500/384
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В кошику
од. на суму грн.
| JANTX2N3584 |
Виробник: Microchip Technology
Description: TRANS NPN 250V 2A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 125mA, 1A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 10V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 2.5 W
Qualification: MIL-PRF-19500/384
Description: TRANS NPN 250V 2A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 125mA, 1A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 10V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 2.5 W
Qualification: MIL-PRF-19500/384
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од. на суму грн.
| JANS2N3634UB |
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A TO-3
Description: TRANS PNP 140V 1A TO-3
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од. на суму грн.