Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (338309) > Сторінка 1046 з 5639
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~~2.jpg "JANTXV1N1204AR") |
JANTXV1N1204AR | Microchip Technology |
 Description: DIODE GP REV 400V 12A DO203AAPackaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 12A Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 38 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V Grade: Military Qualification: MIL-PRF-19500/260 |
на замовлення 194 шт: термін постачання 21-31 дні (днів) |
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JAN1N3016D-1 | Microchip Technology |
Description: DIODE ZENER 6.8V 1W DO41 |
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JANTX1N3016D-1 | Microchip Technology |
Description: DIODE ZENER 6.8V 1W DO41 |
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JANTXV1N3016D-1 | Microchip Technology |
Description: DIODE ZENER 6.8V 1W DO41 |
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JAN1N3016DUR-1 | Microchip Technology |
Description: DIODE ZENER 6.8V 1W DO213AB |
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JANTX1N3016DUR-1 | Microchip Technology |
Description: DIODE ZENER 6.8V 1W DO213AB |
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JANTXV1N3016DUR-1 | Microchip Technology |
Description: DIODE ZENER 6.8V 1W DO213AB |
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JANTX1N3019DUR-1 | Microchip Technology |
Description: DIODE ZENER 9.1V 1W DO213AB Packaging: Bulk Tolerance: ±1% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 6 Ohms Supplier Device Package: DO-213AB (MELF, LL41) Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 25 µA @ 6.9 V |
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JANTXV1N3020B-1 | Microchip Technology |
Description: DIODE ZENER 10V 1W DO41 |
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JAN1N3020BUR-1 | Microchip Technology |
Description: DIODE ZENER 10V 1W DO213AB |
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JANTX1N3020BUR-1 | Microchip Technology |
Description: DIODE ZENER 10V 1W DO213AB |
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JANTXV1N3020BUR-1 | Microchip Technology |
Description: DIODE ZENER 10V 1W DO213AB |
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JAN1N3020C-1 | Microchip Technology |
Description: DIODE ZENER 10V 1W DO41 Packaging: Bulk Tolerance: ±2% Package / Case: DO-204AL, DO041, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 7 Ohms Supplier Device Package: DO-41 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 25 µA @ 7.6 V |
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JANTX1N3020C-1 | Microchip Technology |
Description: DIODE ZENER 10V 1W DO41 |
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JANTXV1N3020C-1 | Microchip Technology |
Description: DIODE ZENER 10V 1W DO41 |
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JAN1N3020CUR-1 | Microchip Technology |
Description: DIODE ZENER 10V 1W DO213AB |
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JANTX1N3020CUR-1 | Microchip Technology |
Description: DIODE ZENER 10V 1W DO213AB |
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JANTXV1N3020CUR-1 | Microchip Technology |
Description: DIODE ZENER 10V 1W DO213AB |
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JAN1N3020D-1 | Microchip Technology |
Description: DIODE ZENER 10V 1W DO41 |
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JANTX1N3020D-1 | Microchip Technology |
Description: DIODE ZENER 10V 1W DO41 |
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JANTXV1N3020D-1 | Microchip Technology |
Description: DIODE ZENER 10V 1W DO41 |
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JAN1N3020DUR-1 | Microchip Technology |
Description: DIODE ZENER 10V 1W DO213AB Packaging: Bulk Tolerance: ±1% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 7 Ohms Supplier Device Package: DO-213AB (MELF, LL41) Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 25 µA @ 7.6 V |
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JANTX1N3020DUR-1 | Microchip Technology |
Description: DIODE ZENER 10V 1W DO213AB Packaging: Bulk Tolerance: ±1% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 7 Ohms Supplier Device Package: DO-213AB (MELF, LL41) Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 25 µA @ 7.6 V |
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JANTXV1N3020DUR-1 | Microchip Technology |
Description: DIODE ZENER 10V 1W DO213AB Packaging: Bulk Tolerance: ±1% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 7 Ohms Supplier Device Package: DO-213AB (MELF, LL41) Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 25 µA @ 7.6 V |
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JANTX1N3029B-1 | Microchip Technology |
Description: DIODE ZENER 24V 1W DO41 |
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JANTXV1N3029B-1 | Microchip Technology |
Description: DIODE ZENER 24V 1W DO41 |
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JAN1N3029BUR-1 | Microchip Technology |
Description: DIODE ZENER 24V 1W DO213AB |
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JANTX1N3029BUR-1 | Microchip Technology |
Description: DIODE ZENER 24V 1W DO213AB |
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JANTXV1N3029BUR-1 | Microchip Technology |
Description: DIODE ZENER 24V 1W DO213AB |
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JAN1N3029C-1 | Microchip Technology |
Description: DIODE ZENER 24V 1W DO41 |
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JANTX1N3029C-1 | Microchip Technology |
Description: DIODE ZENER 24V 1W DO41 |
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JANTXV1N3029C-1 | Microchip Technology |
Description: DIODE ZENER 24V 1W DO41 |
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JAN1N3029CUR-1 | Microchip Technology |
Description: DIODE ZENER 24V 1W DO213AB |
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JANTX1N3029CUR-1 | Microchip Technology |
Description: DIODE ZENER 24V 1W DO213AB |
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JANTXV1N3029CUR-1 | Microchip Technology |
Description: DIODE ZENER 24V 1W DO213AB |
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JAN1N3029D-1 | Microchip Technology |
Description: DIODE ZENER 24V 1W DO41 |
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JANTX1N3029D-1 | Microchip Technology |
Description: DIODE ZENER 24V 1W DO41 |
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JANTXV1N3029D-1 | Microchip Technology |
Description: DIODE ZENER 24V 1W DO41 |
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JAN1N3029DUR-1 | Microchip Technology |
Description: DIODE ZENER 24V 1W DO213AB |
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JANTX1N3029DUR-1 | Microchip Technology |
Description: DIODE ZENER 24V 1W DO213AB |
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JANTXV1N3029DUR-1 | Microchip Technology |
Description: DIODE ZENER 24V 1W DO213AB |
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JANTXV1N3030B-1 | Microchip Technology |
Description: DIODE ZENER 27V 1W DO41 Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 35 Ohms Supplier Device Package: DO-41 Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 20.6 V |
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JAN1N3030BUR-1 | Microchip Technology |
Description: DIODE ZENER 27V 1W DO213AB Packaging: Bulk Tolerance: ±5% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 35 Ohms Supplier Device Package: DO-213AB (MELF, LL41) Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 20.6 V |
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JANTX1N3030BUR-1 | Microchip Technology |
Description: DIODE ZENER 27V 1W DO213AB Packaging: Bulk Tolerance: ±5% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 35 Ohms Supplier Device Package: DO-213AB (MELF, LL41) Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 20.6 V |
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JANTXV1N3030BUR-1 | Microchip Technology |
Description: DIODE ZENER 27V 1W DO213AB Packaging: Bulk Tolerance: ±5% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 35 Ohms Supplier Device Package: DO-213AB (MELF, LL41) Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 20.6 V |
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JANTX1N3036DUR-1 | Microchip Technology |
Description: DIODE ZENER 47V 1W DO213AB |
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JAN1N3595A-1 | Microchip Technology |
Description: DIODE GEN PURP 125V 150MA DO35 Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 125 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 nA @ 125 V Grade: Military Qualification: MIL-PRF-19500/241 |
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JANTX1N3595A-1 | Microchip Technology |
Description: DIODE GEN PURP 125V 150MA DO35 Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 125 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 nA @ 125 V Grade: Military Qualification: MIL-S-19500-241 |
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JANTXV1N3595A-1 | Microchip Technology |
Description: DIODE GEN PURP 125V 150MA DO35 Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 125 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 nA @ 125 V Grade: Military Qualification: MIL-PRF-19500/241 |
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| JAN1N3595AUR-1 | Microchip Technology |
Description: DIODE GP 125V 150MA DO213AA Packaging: Bulk Package / Case: DO-213AA Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 125 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 nA @ 125 V Grade: Military Qualification: MIL-PRF-19500/241 |
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| JANTX1N3595AUR-1 | Microchip Technology |
Description: DIODE GP 125V 150MA DO213AA Packaging: Bulk Package / Case: DO-213AA Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 125 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 nA @ 125 V Grade: Military Qualification: MIL-S-19500-241 |
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JANTXV1N3595AUR-1 | Microchip Technology |
Description: DIODE GP 125V 150MA DO213AA |
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JAN1N3595AUS | Microchip Technology |
Description: DIODE GEN PURP 125V 150MA DO35 Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 125 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 nA @ 125 V Grade: Military Qualification: MIL-PRF-19500/241 |
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| JANTXV1N3595AUS | Microchip Technology |
Description: DIODE GP 125V 150MA DO213AA Packaging: Bulk Package / Case: DO-213AA Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 125 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 nA @ 125 V Qualification: MIL-PRF-19500/241 |
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| JAN1N3595UR-1 | Microchip Technology |
Description: DIODE GP 125V 150MA DO213AA Packaging: Bulk Package / Case: DO-213AA Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 125 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA Current - Reverse Leakage @ Vr: 1 nA @ 125 V Grade: Military Qualification: MIL-PRF-19500/241 |
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JANTXV1N3595UR-1 | Microchip Technology |
Description: DIODE GP 125V 150MA DO213AA |
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JAN1N3600 | Microchip Technology |
Description: DIODE GEN PURP 50V 200MA DO7 Packaging: Bulk Package / Case: DO-204AA, DO-7, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: DO-7 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V Grade: Military Qualification: MIL-PRF-19500/231 |
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JANTXV1N3824AUR-1 | Microchip Technology |
Description: DIODE ZENER 4.3V 1W DO213AB Packaging: Bulk Tolerance: ±5% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 4.3 V Impedance (Max) (Zzt): 9 Ohms Supplier Device Package: DO-213AB (MELF, LL41) Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
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JAN1N4099-1 | Microchip Technology |
Description: DIODE ZENER 6.8V DO35 |
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JAN1N4099C-1 | Microchip Technology |
Description: DIODE ZENER 6.8V DO35 Packaging: Bulk Tolerance: ±2% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 5.2 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 200 Voltage Coupled to Current - Reverse Leakage @ Vr: 5.2 Grade: Military Qualification: MIL-PRF-19500/435 |
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| JANTXV1N1204AR |
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Виробник: Microchip Technology
Description: DIODE GP REV 400V 12A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 38 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Military
Qualification: MIL-PRF-19500/260
Description: DIODE GP REV 400V 12A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 38 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Military
Qualification: MIL-PRF-19500/260
на замовлення 194 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4744.44 грн |
| JAN1N3016DUR-1 |
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Виробник: Microchip Technology
Description: DIODE ZENER 6.8V 1W DO213AB
Description: DIODE ZENER 6.8V 1W DO213AB
товар відсутній
| JANTX1N3016DUR-1 |
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Виробник: Microchip Technology
Description: DIODE ZENER 6.8V 1W DO213AB
Description: DIODE ZENER 6.8V 1W DO213AB
товар відсутній
| JANTXV1N3016DUR-1 |
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Виробник: Microchip Technology
Description: DIODE ZENER 6.8V 1W DO213AB
Description: DIODE ZENER 6.8V 1W DO213AB
товар відсутній
| JANTX1N3019DUR-1 |
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Виробник: Microchip Technology
Description: DIODE ZENER 9.1V 1W DO213AB
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 25 µA @ 6.9 V
Description: DIODE ZENER 9.1V 1W DO213AB
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 25 µA @ 6.9 V
товар відсутній
| JAN1N3020BUR-1 |
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Виробник: Microchip Technology
Description: DIODE ZENER 10V 1W DO213AB
Description: DIODE ZENER 10V 1W DO213AB
товар відсутній
| JANTX1N3020BUR-1 |
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Виробник: Microchip Technology
Description: DIODE ZENER 10V 1W DO213AB
Description: DIODE ZENER 10V 1W DO213AB
товар відсутній
| JANTXV1N3020BUR-1 |
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Виробник: Microchip Technology
Description: DIODE ZENER 10V 1W DO213AB
Description: DIODE ZENER 10V 1W DO213AB
товар відсутній
| JAN1N3020C-1 |
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Виробник: Microchip Technology
Description: DIODE ZENER 10V 1W DO41
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-204AL, DO041, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 25 µA @ 7.6 V
Description: DIODE ZENER 10V 1W DO41
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-204AL, DO041, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 25 µA @ 7.6 V
товар відсутній
| JAN1N3020CUR-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 10V 1W DO213AB
Description: DIODE ZENER 10V 1W DO213AB
товар відсутній
| JANTX1N3020CUR-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 10V 1W DO213AB
Description: DIODE ZENER 10V 1W DO213AB
товар відсутній
| JANTXV1N3020CUR-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 10V 1W DO213AB
Description: DIODE ZENER 10V 1W DO213AB
товар відсутній
| JAN1N3020DUR-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 10V 1W DO213AB
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 25 µA @ 7.6 V
Description: DIODE ZENER 10V 1W DO213AB
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 25 µA @ 7.6 V
товар відсутній
| JANTX1N3020DUR-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 10V 1W DO213AB
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 25 µA @ 7.6 V
Description: DIODE ZENER 10V 1W DO213AB
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 25 µA @ 7.6 V
товар відсутній
| JANTXV1N3020DUR-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 10V 1W DO213AB
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 25 µA @ 7.6 V
Description: DIODE ZENER 10V 1W DO213AB
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 25 µA @ 7.6 V
товар відсутній
| JAN1N3029BUR-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 24V 1W DO213AB
Description: DIODE ZENER 24V 1W DO213AB
товар відсутній
| JANTX1N3029BUR-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 24V 1W DO213AB
Description: DIODE ZENER 24V 1W DO213AB
товар відсутній
| JANTXV1N3029BUR-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 24V 1W DO213AB
Description: DIODE ZENER 24V 1W DO213AB
товар відсутній
| JAN1N3029CUR-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 24V 1W DO213AB
Description: DIODE ZENER 24V 1W DO213AB
товар відсутній
| JANTX1N3029CUR-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 24V 1W DO213AB
Description: DIODE ZENER 24V 1W DO213AB
товар відсутній
| JANTXV1N3029CUR-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 24V 1W DO213AB
Description: DIODE ZENER 24V 1W DO213AB
товар відсутній
| JAN1N3029DUR-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 24V 1W DO213AB
Description: DIODE ZENER 24V 1W DO213AB
товар відсутній
| JANTX1N3029DUR-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 24V 1W DO213AB
Description: DIODE ZENER 24V 1W DO213AB
товар відсутній
| JANTXV1N3029DUR-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 24V 1W DO213AB
Description: DIODE ZENER 24V 1W DO213AB
товар відсутній
| JANTXV1N3030B-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 27V 1W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 20.6 V
Description: DIODE ZENER 27V 1W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 20.6 V
товар відсутній
| JAN1N3030BUR-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 27V 1W DO213AB
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 20.6 V
Description: DIODE ZENER 27V 1W DO213AB
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 20.6 V
товар відсутній
| JANTX1N3030BUR-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 27V 1W DO213AB
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 20.6 V
Description: DIODE ZENER 27V 1W DO213AB
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 20.6 V
товар відсутній
| JANTXV1N3030BUR-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 27V 1W DO213AB
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 20.6 V
Description: DIODE ZENER 27V 1W DO213AB
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 20.6 V
товар відсутній
| JANTX1N3036DUR-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 47V 1W DO213AB
Description: DIODE ZENER 47V 1W DO213AB
товар відсутній
| JAN1N3595A-1 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 125V 150MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 nA @ 125 V
Grade: Military
Qualification: MIL-PRF-19500/241
Description: DIODE GEN PURP 125V 150MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 nA @ 125 V
Grade: Military
Qualification: MIL-PRF-19500/241
товар відсутній
| JANTX1N3595A-1 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 125V 150MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 nA @ 125 V
Grade: Military
Qualification: MIL-S-19500-241
Description: DIODE GEN PURP 125V 150MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 nA @ 125 V
Grade: Military
Qualification: MIL-S-19500-241
товар відсутній
| JANTXV1N3595A-1 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 125V 150MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 nA @ 125 V
Grade: Military
Qualification: MIL-PRF-19500/241
Description: DIODE GEN PURP 125V 150MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 nA @ 125 V
Grade: Military
Qualification: MIL-PRF-19500/241
товар відсутній
| JAN1N3595AUR-1 |
|
Виробник: Microchip Technology
Description: DIODE GP 125V 150MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 nA @ 125 V
Grade: Military
Qualification: MIL-PRF-19500/241
Description: DIODE GP 125V 150MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 nA @ 125 V
Grade: Military
Qualification: MIL-PRF-19500/241
товар відсутній
| JANTX1N3595AUR-1 |
|
Виробник: Microchip Technology
Description: DIODE GP 125V 150MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 nA @ 125 V
Grade: Military
Qualification: MIL-S-19500-241
Description: DIODE GP 125V 150MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 nA @ 125 V
Grade: Military
Qualification: MIL-S-19500-241
товар відсутній
| JANTXV1N3595AUR-1 |
|
Виробник: Microchip Technology
Description: DIODE GP 125V 150MA DO213AA
Description: DIODE GP 125V 150MA DO213AA
товар відсутній
| JAN1N3595AUS |
Виробник: Microchip Technology
Description: DIODE GEN PURP 125V 150MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 nA @ 125 V
Grade: Military
Qualification: MIL-PRF-19500/241
Description: DIODE GEN PURP 125V 150MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 nA @ 125 V
Grade: Military
Qualification: MIL-PRF-19500/241
товар відсутній
| JANTXV1N3595AUS |
Виробник: Microchip Technology
Description: DIODE GP 125V 150MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 nA @ 125 V
Qualification: MIL-PRF-19500/241
Description: DIODE GP 125V 150MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 nA @ 125 V
Qualification: MIL-PRF-19500/241
товар відсутній
| JAN1N3595UR-1 |
|
Виробник: Microchip Technology
Description: DIODE GP 125V 150MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Grade: Military
Qualification: MIL-PRF-19500/241
Description: DIODE GP 125V 150MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Grade: Military
Qualification: MIL-PRF-19500/241
товар відсутній
| JANTXV1N3595UR-1 |
|
Виробник: Microchip Technology
Description: DIODE GP 125V 150MA DO213AA
Description: DIODE GP 125V 150MA DO213AA
товар відсутній
| JAN1N3600 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 200MA DO7
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-7
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/231
Description: DIODE GEN PURP 50V 200MA DO7
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-7
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/231
товар відсутній
| JANTXV1N3824AUR-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 4.3V 1W DO213AB
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Description: DIODE ZENER 4.3V 1W DO213AB
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
товар відсутній
| JAN1N4099C-1 |
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Виробник: Microchip Technology
Description: DIODE ZENER 6.8V DO35
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5.2 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 200
Voltage Coupled to Current - Reverse Leakage @ Vr: 5.2
Grade: Military
Qualification: MIL-PRF-19500/435
Description: DIODE ZENER 6.8V DO35
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5.2 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 200
Voltage Coupled to Current - Reverse Leakage @ Vr: 5.2
Grade: Military
Qualification: MIL-PRF-19500/435
товар відсутній