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MIC4606-1YTS-T5 MIC4606-1YTS-T5 Microchip Technology MIC4606-Data-Sheet-DS20005604.pdf Description: IC GATE DRVR FULL-BRIDGE 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-SSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 5.25V ~ 16V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 108 V
Supplier Device Package: 16-SSOP
Rise / Fall Time (Typ): 20ns, 20ns
Channel Type: Independent
Driven Configuration: Full-Bridge
Number of Drivers: 4
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 1A, 1A
DigiKey Programmable: Not Verified
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MIC4606-2YTS-TR MIC4606-2YTS-TR Microchip Technology MIC4606-Data-Sheet-DS20005604.pdf Description: IC GATE DRVR FULL-BRIDGE 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 5.25V ~ 16V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 108 V
Supplier Device Package: 16-TSSOP
Rise / Fall Time (Typ): 20ns, 20ns
Channel Type: Synchronous
Driven Configuration: Full-Bridge
Number of Drivers: 4
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 1A, 1A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+155.98 грн
Мінімальне замовлення: 2500
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MIC4606-2YTS-TR MIC4606-2YTS-TR Microchip Technology MIC4606-Data-Sheet-DS20005604.pdf Description: IC GATE DRVR FULL-BRIDGE 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 5.25V ~ 16V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 108 V
Supplier Device Package: 16-TSSOP
Rise / Fall Time (Typ): 20ns, 20ns
Channel Type: Synchronous
Driven Configuration: Full-Bridge
Number of Drivers: 4
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 1A, 1A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3537 шт:
термін постачання 21-31 дні (днів)
2+206.41 грн
25+165.01 грн
100+150.20 грн
Мінімальне замовлення: 2
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CG1657 DAISY CHAIN Microchip Technology CG1657_Daisy_Chain_User_Guide.pdf Description: DAISY CHAIN PKG MECH
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SM2S-325FCSR-MSSOC Microchip Technology Description: ADAPTER MODULE FC325 FCBGA
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ATBTLC1000-XPRO-ADPT ATBTLC1000-XPRO-ADPT Microchip Technology ATBTLC1000-XPRO-ADPT_Web.pdf Description: BTLC1000-XPRO EXT ADAPTER BOARD
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+3103.32 грн
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LX8237ILQ-TR Microchip Technology LX8237_rev_10b.pdf Description: IC HOT SWAP CTRLR GP 24QFN
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PD-IM-7504B PD-IM-7504B Microchip Technology PD-IM-7504B_User%20Guide.pdf Description: EVAL BOARD FOR PD69104A PD69104B
Packaging: Bulk
Function: Power Over Ethernet (PoE)
Type: Power Management
Utilized IC / Part: PD69104A, PD69104B, PD69104B1
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+24374.07 грн
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PD69108FILQ-TR PD69108FILQ-TR Microchip Technology 123525-pd69108-pb-r-pdf Description: IC POE CNTRL 8 CHANNEL 48QFN
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PD69204ILQ-TR Microchip Technology Description: POE PSE CONTROLLER
Packaging: Tape & Reel (TR)
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PD70100EVB15B Microchip Technology 126155-pd70100-lx7309-15w-evaluation-board-user-guide Description: POE PD MODULE
Packaging: Bulk
Function: Power Over Ethernet (PoE)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: PD70100
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PD70224EVB-WAUXPWR Microchip Technology Description: POE PD MODULE
Packaging: Bulk
Function: Power Over Ethernet (PoE)
Type: Power Management
Utilized IC / Part: PD70210A, PD70224
Supplied Contents: Board(s)
Part Status: Active
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PD70224LEVBWAUXPWR Microchip Technology Description: POE PD MODULE
Packaging: Bulk
Function: Power Over Ethernet (PoE)
Type: Power Management
Utilized IC / Part: PD70224
Supplied Contents: Board(s)
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PD70224LILQ-TR Microchip Technology Description: POE PD MODULE
Packaging: Tape & Reel (TR)
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2N2323AS Microchip Technology 6024-2n2323-datasheet Description: SCR 50V 20UA TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 50 V
Grade: Military
Qualification: MIL-PRF-19500/276
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2N2324AS Microchip Technology 6024-2n2323-datasheet Description: SCR 100V 20UA TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Supplier Device Package: TO-5
Grade: Military
Voltage - Off State: 100 V
Qualification: MIL-PRF-19500/276
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2N2324S Microchip Technology 6024-2n2323-datasheet Description: SCR 100V 200UA TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Supplier Device Package: TO-5
Grade: Military
Voltage - Off State: 100 V
Qualification: MIL-PRF-19500/276
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JAN2N2324 Microchip Technology 2N2323_-_2N2329A.pdf Description: SCR 100V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - Off State (Max): 10 µA
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 100 V
Grade: Military
Qualification: MIL-PRF-19500/276
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JAN2N2324S Microchip Technology 2N2323_-_2N2329A.pdf Description: SCR 100V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - Off State (Max): 10 µA
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 100 V
Grade: Military
Qualification: MIL-PRF-19500/276
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JANTX2N2323A Microchip Technology 2N2323_-_2N2329A.pdf Description: SCR 50V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Current - Off State (Max): 10 µA
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 50 V
Grade: Military
Qualification: MIL-PRF-19500/276
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JANTX2N2323AS Microchip Technology 2N2323_-_2N2329A.pdf Description: SCR 50V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Current - Off State (Max): 10 µA
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 50 V
Grade: Military
Qualification: MIL-PRF-19500/276
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2N3821 Microchip Technology 2N3821%2C%203822%2C%203823.pdf Description: JFET N-CH 50V TO72
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 15V
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: TO-72
Grade: Military
Drain to Source Voltage (Vdss): 50 V
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 4 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2.5 mA @ 15 V
Qualification: MIL-PRF-19500/375
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2N4091 2N4091 Microchip Technology 6071-2n4091-pdf Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 30 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 20 V
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2N4091UB 2N4091UB Microchip Technology Description: JFET N-CH 40V 3UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: UB
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 30 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 20 V
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2N4092 2N4092 Microchip Technology 6071-2n4091-pdf Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 50 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 20 V
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2N4092UB 2N4092UB Microchip Technology Description: JFET N-CH 40V 3UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: UB
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 50 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 20 V
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2N4093 2N4093 Microchip Technology 6071-2n4091-pdf Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 80 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 20 V
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2N4093UB 2N4093UB Microchip Technology Description: JFET N-CH 40V 3UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: UB
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 80 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 20 V
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2N4391UB Microchip Technology Description: JFET N-CH
Packaging: Bulk
Part Status: Active
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2N4392UB Microchip Technology Description: JFET N-CH
Packaging: Bulk
Part Status: Active
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2N4393UB Microchip Technology Description: JFET N-CH
Packaging: Bulk
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2N4449UB 2N4449UB Microchip Technology 8893-lds-0057-datasheet Description: TRANS NPN 20V UB
Packaging: Bulk
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: UB
Grade: Military
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Qualification: MIL-PRF-19500/317
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2N4856UB 2N4856UB Microchip Technology Description: JFET N-CH 40V
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: UB
Part Status: Active
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 25 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 175 mA @ 15 V
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2N4857UB 2N4857UB Microchip Technology Description: JFET N-CH 40V
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: UB
Part Status: Active
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 40 Ohms
Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
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2N4858UB 2N4858UB Microchip Technology Description: JFET N-CH 40V 3UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: UB
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 4 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
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2N4859UB 2N4859UB Microchip Technology Description: JFET N-CH 30V
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 360 mW
Resistance - RDS(On): 25 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 175 mA @ 15 V
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2N4860UB 2N4860UB Microchip Technology 2N4860UB.pdf Description: JFET N-CH 30V
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 360 mW
Resistance - RDS(On): 40 Ohms
Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
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2N5114 2N5114 Microchip Technology 124387-lds-0006 Description: JFET P-CH 30V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 75 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 90 mA @ 18 V
Grade: Military
Qualification: MIL-PRF-19500
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2N5114UB 2N5114UB Microchip Technology 123965-lds-0006-1 Description: JFET P-CH 30V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Part Status: Discontinued at Digi-Key
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 75 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 90 mA @ 18 V
Grade: Military
Qualification: MIL-PRF-19500
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2N5115UB 2N5115UB Microchip Technology 123965-lds-0006-1 Description: JFET P-CH 30V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 6 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 60 mA @ 15 V
Qualification: MIL-PRF-19500
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2N5427 Microchip Technology Description: TRANS PNP 80V 7A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 7A, 80V
Supplier Device Package: TO-66
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
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JANS2N2222AUBC JANS2N2222AUBC Microchip Technology Description: TRANS NPN 50V 0.8A UBC
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
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JANS2N2369AUBC JANS2N2369AUBC Microchip Technology 8893-lds-0057-datasheet Description: TRANS NPN 20V 3SMD
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: UBC
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/317
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JANSH2N2222A JANSH2N2222A Microchip Technology 8868-lds-0042-pdf Description: TRANS NPN 50V 0.8A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
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MV2N4092 MV2N4092 Microchip Technology 8805-lds-0007-pdf Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 50 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 20 V
Qualification: MIL-PRF-19500/431
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MV2N4391 Microchip Technology Description: JFET N-CH
Packaging: Bulk
Part Status: Active
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MV2N4391UB Microchip Technology Description: JFET N-CH
Packaging: Bulk
Part Status: Active
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MV2N4392 Microchip Technology Description: JFET N-CH
Packaging: Bulk
Part Status: Active
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MV2N4392UB Microchip Technology Description: JFET N-CH
Packaging: Bulk
Part Status: Active
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MV2N4393 Microchip Technology Description: JFET N-CH
Packaging: Bulk
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MV2N4393UB Microchip Technology Description: JFET N-CH
Packaging: Bulk
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MV2N4856 MV2N4856 Microchip Technology 8796-lds-0002-pdf Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 25 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 175 mA @ 15 V
Grade: Military
Qualification: MIL-PRF-19500/385
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MV2N4856UB Microchip Technology Description: JFET N-CH
Packaging: Bulk
Part Status: Active
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MV2N4857 MV2N4857 Microchip Technology 8796-lds-0002-pdf Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 40 Ohms
Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
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MV2N4857UB Microchip Technology Description: JFET N-CH
Packaging: Bulk
Part Status: Active
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MV2N4858 MV2N4858 Microchip Technology 8796-lds-0002-pdf Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 4 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0): 80 mA @ 15 V
Qualification: MIL-PRF-19500/385
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MV2N4858UB Microchip Technology Description: JFET N-CH
Packaging: Bulk
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MV2N4859 MV2N4859 Microchip Technology 8796-lds-0002-pdf Description: JFET N-CH 30V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 360 mW
Resistance - RDS(On): 25 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 175 mA @ 15 V
Grade: Military
Qualification: MIL-PRF-19500/385
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MV2N4859UB Microchip Technology Description: JFET N-CH
Packaging: Bulk
Part Status: Active
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MV2N4860 MV2N4860 Microchip Technology 8796-lds-0002-pdf Description: JFET N-CH 30V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-18
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 360 mW
Resistance - RDS(On): 40 Ohms
Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
Grade: Military
Qualification: MIL-PRF-19500/385
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MIC4606-1YTS-T5 MIC4606-Data-Sheet-DS20005604.pdf
MIC4606-1YTS-T5
Виробник: Microchip Technology
Description: IC GATE DRVR FULL-BRIDGE 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-SSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 5.25V ~ 16V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 108 V
Supplier Device Package: 16-SSOP
Rise / Fall Time (Typ): 20ns, 20ns
Channel Type: Independent
Driven Configuration: Full-Bridge
Number of Drivers: 4
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 1A, 1A
DigiKey Programmable: Not Verified
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MIC4606-2YTS-TR MIC4606-Data-Sheet-DS20005604.pdf
MIC4606-2YTS-TR
Виробник: Microchip Technology
Description: IC GATE DRVR FULL-BRIDGE 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 5.25V ~ 16V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 108 V
Supplier Device Package: 16-TSSOP
Rise / Fall Time (Typ): 20ns, 20ns
Channel Type: Synchronous
Driven Configuration: Full-Bridge
Number of Drivers: 4
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 1A, 1A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+155.98 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
MIC4606-2YTS-TR MIC4606-Data-Sheet-DS20005604.pdf
MIC4606-2YTS-TR
Виробник: Microchip Technology
Description: IC GATE DRVR FULL-BRIDGE 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 5.25V ~ 16V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 108 V
Supplier Device Package: 16-TSSOP
Rise / Fall Time (Typ): 20ns, 20ns
Channel Type: Synchronous
Driven Configuration: Full-Bridge
Number of Drivers: 4
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 1A, 1A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3537 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+206.41 грн
25+165.01 грн
100+150.20 грн
Мінімальне замовлення: 2
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CG1657 DAISY CHAIN CG1657_Daisy_Chain_User_Guide.pdf
Виробник: Microchip Technology
Description: DAISY CHAIN PKG MECH
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SM2S-325FCSR-MSSOC
Виробник: Microchip Technology
Description: ADAPTER MODULE FC325 FCBGA
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ATBTLC1000-XPRO-ADPT ATBTLC1000-XPRO-ADPT_Web.pdf
ATBTLC1000-XPRO-ADPT
Виробник: Microchip Technology
Description: BTLC1000-XPRO EXT ADAPTER BOARD
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3103.32 грн
В кошику  од. на суму  грн.
LX8237ILQ-TR LX8237_rev_10b.pdf
Виробник: Microchip Technology
Description: IC HOT SWAP CTRLR GP 24QFN
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PD-IM-7504B PD-IM-7504B_User%20Guide.pdf
PD-IM-7504B
Виробник: Microchip Technology
Description: EVAL BOARD FOR PD69104A PD69104B
Packaging: Bulk
Function: Power Over Ethernet (PoE)
Type: Power Management
Utilized IC / Part: PD69104A, PD69104B, PD69104B1
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+24374.07 грн
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PD69108FILQ-TR 123525-pd69108-pb-r-pdf
PD69108FILQ-TR
Виробник: Microchip Technology
Description: IC POE CNTRL 8 CHANNEL 48QFN
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PD69204ILQ-TR
Виробник: Microchip Technology
Description: POE PSE CONTROLLER
Packaging: Tape & Reel (TR)
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PD70100EVB15B 126155-pd70100-lx7309-15w-evaluation-board-user-guide
Виробник: Microchip Technology
Description: POE PD MODULE
Packaging: Bulk
Function: Power Over Ethernet (PoE)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: PD70100
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PD70224EVB-WAUXPWR
Виробник: Microchip Technology
Description: POE PD MODULE
Packaging: Bulk
Function: Power Over Ethernet (PoE)
Type: Power Management
Utilized IC / Part: PD70210A, PD70224
Supplied Contents: Board(s)
Part Status: Active
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PD70224LEVBWAUXPWR
Виробник: Microchip Technology
Description: POE PD MODULE
Packaging: Bulk
Function: Power Over Ethernet (PoE)
Type: Power Management
Utilized IC / Part: PD70224
Supplied Contents: Board(s)
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PD70224LILQ-TR
Виробник: Microchip Technology
Description: POE PD MODULE
Packaging: Tape & Reel (TR)
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2N2323AS 6024-2n2323-datasheet
Виробник: Microchip Technology
Description: SCR 50V 20UA TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 50 V
Grade: Military
Qualification: MIL-PRF-19500/276
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2N2324AS 6024-2n2323-datasheet
Виробник: Microchip Technology
Description: SCR 100V 20UA TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Supplier Device Package: TO-5
Grade: Military
Voltage - Off State: 100 V
Qualification: MIL-PRF-19500/276
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2N2324S 6024-2n2323-datasheet
Виробник: Microchip Technology
Description: SCR 100V 200UA TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Supplier Device Package: TO-5
Grade: Military
Voltage - Off State: 100 V
Qualification: MIL-PRF-19500/276
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JAN2N2324 2N2323_-_2N2329A.pdf
Виробник: Microchip Technology
Description: SCR 100V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - Off State (Max): 10 µA
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 100 V
Grade: Military
Qualification: MIL-PRF-19500/276
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JAN2N2324S 2N2323_-_2N2329A.pdf
Виробник: Microchip Technology
Description: SCR 100V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - Off State (Max): 10 µA
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 100 V
Grade: Military
Qualification: MIL-PRF-19500/276
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JANTX2N2323A 2N2323_-_2N2329A.pdf
Виробник: Microchip Technology
Description: SCR 50V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Current - Off State (Max): 10 µA
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 50 V
Grade: Military
Qualification: MIL-PRF-19500/276
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JANTX2N2323AS 2N2323_-_2N2329A.pdf
Виробник: Microchip Technology
Description: SCR 50V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Current - Off State (Max): 10 µA
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 50 V
Grade: Military
Qualification: MIL-PRF-19500/276
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2N3821 2N3821%2C%203822%2C%203823.pdf
Виробник: Microchip Technology
Description: JFET N-CH 50V TO72
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 15V
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: TO-72
Grade: Military
Drain to Source Voltage (Vdss): 50 V
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 4 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2.5 mA @ 15 V
Qualification: MIL-PRF-19500/375
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2N4091 6071-2n4091-pdf
2N4091
Виробник: Microchip Technology
Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 30 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 20 V
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2N4091UB
2N4091UB
Виробник: Microchip Technology
Description: JFET N-CH 40V 3UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: UB
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 30 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 20 V
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2N4092 6071-2n4091-pdf
2N4092
Виробник: Microchip Technology
Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 50 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 20 V
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2N4092UB
2N4092UB
Виробник: Microchip Technology
Description: JFET N-CH 40V 3UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: UB
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 50 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 20 V
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2N4093 6071-2n4091-pdf
2N4093
Виробник: Microchip Technology
Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 80 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 20 V
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2N4093UB
2N4093UB
Виробник: Microchip Technology
Description: JFET N-CH 40V 3UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: UB
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 80 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 20 V
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2N4391UB
Виробник: Microchip Technology
Description: JFET N-CH
Packaging: Bulk
Part Status: Active
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2N4392UB
Виробник: Microchip Technology
Description: JFET N-CH
Packaging: Bulk
Part Status: Active
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2N4393UB
Виробник: Microchip Technology
Description: JFET N-CH
Packaging: Bulk
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2N4449UB 8893-lds-0057-datasheet
2N4449UB
Виробник: Microchip Technology
Description: TRANS NPN 20V UB
Packaging: Bulk
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: UB
Grade: Military
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Qualification: MIL-PRF-19500/317
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2N4856UB
2N4856UB
Виробник: Microchip Technology
Description: JFET N-CH 40V
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: UB
Part Status: Active
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 25 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 175 mA @ 15 V
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2N4857UB
2N4857UB
Виробник: Microchip Technology
Description: JFET N-CH 40V
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: UB
Part Status: Active
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 40 Ohms
Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
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2N4858UB
2N4858UB
Виробник: Microchip Technology
Description: JFET N-CH 40V 3UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: UB
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 4 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
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2N4859UB
2N4859UB
Виробник: Microchip Technology
Description: JFET N-CH 30V
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 360 mW
Resistance - RDS(On): 25 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 175 mA @ 15 V
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2N4860UB 2N4860UB.pdf
2N4860UB
Виробник: Microchip Technology
Description: JFET N-CH 30V
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 360 mW
Resistance - RDS(On): 40 Ohms
Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
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2N5114 124387-lds-0006
2N5114
Виробник: Microchip Technology
Description: JFET P-CH 30V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 75 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 90 mA @ 18 V
Grade: Military
Qualification: MIL-PRF-19500
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2N5114UB 123965-lds-0006-1
2N5114UB
Виробник: Microchip Technology
Description: JFET P-CH 30V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Part Status: Discontinued at Digi-Key
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 75 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 90 mA @ 18 V
Grade: Military
Qualification: MIL-PRF-19500
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2N5115UB 123965-lds-0006-1
2N5115UB
Виробник: Microchip Technology
Description: JFET P-CH 30V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 6 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 60 mA @ 15 V
Qualification: MIL-PRF-19500
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2N5427
Виробник: Microchip Technology
Description: TRANS PNP 80V 7A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 7A, 80V
Supplier Device Package: TO-66
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
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JANS2N2222AUBC
JANS2N2222AUBC
Виробник: Microchip Technology
Description: TRANS NPN 50V 0.8A UBC
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
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JANS2N2369AUBC 8893-lds-0057-datasheet
JANS2N2369AUBC
Виробник: Microchip Technology
Description: TRANS NPN 20V 3SMD
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: UBC
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/317
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JANSH2N2222A 8868-lds-0042-pdf
JANSH2N2222A
Виробник: Microchip Technology
Description: TRANS NPN 50V 0.8A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
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MV2N4092 8805-lds-0007-pdf
MV2N4092
Виробник: Microchip Technology
Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 50 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 20 V
Qualification: MIL-PRF-19500/431
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MV2N4391
Виробник: Microchip Technology
Description: JFET N-CH
Packaging: Bulk
Part Status: Active
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MV2N4391UB
Виробник: Microchip Technology
Description: JFET N-CH
Packaging: Bulk
Part Status: Active
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MV2N4392
Виробник: Microchip Technology
Description: JFET N-CH
Packaging: Bulk
Part Status: Active
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MV2N4392UB
Виробник: Microchip Technology
Description: JFET N-CH
Packaging: Bulk
Part Status: Active
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MV2N4393
Виробник: Microchip Technology
Description: JFET N-CH
Packaging: Bulk
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MV2N4393UB
Виробник: Microchip Technology
Description: JFET N-CH
Packaging: Bulk
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MV2N4856 8796-lds-0002-pdf
MV2N4856
Виробник: Microchip Technology
Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 25 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 175 mA @ 15 V
Grade: Military
Qualification: MIL-PRF-19500/385
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MV2N4856UB
Виробник: Microchip Technology
Description: JFET N-CH
Packaging: Bulk
Part Status: Active
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MV2N4857 8796-lds-0002-pdf
MV2N4857
Виробник: Microchip Technology
Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 40 Ohms
Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
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MV2N4857UB
Виробник: Microchip Technology
Description: JFET N-CH
Packaging: Bulk
Part Status: Active
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MV2N4858 8796-lds-0002-pdf
MV2N4858
Виробник: Microchip Technology
Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 4 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0): 80 mA @ 15 V
Qualification: MIL-PRF-19500/385
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MV2N4858UB
Виробник: Microchip Technology
Description: JFET N-CH
Packaging: Bulk
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MV2N4859 8796-lds-0002-pdf
MV2N4859
Виробник: Microchip Technology
Description: JFET N-CH 30V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 360 mW
Resistance - RDS(On): 25 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 175 mA @ 15 V
Grade: Military
Qualification: MIL-PRF-19500/385
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MV2N4859UB
Виробник: Microchip Technology
Description: JFET N-CH
Packaging: Bulk
Part Status: Active
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MV2N4860 8796-lds-0002-pdf
MV2N4860
Виробник: Microchip Technology
Description: JFET N-CH 30V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-18
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 360 mW
Resistance - RDS(On): 40 Ohms
Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
Grade: Military
Qualification: MIL-PRF-19500/385
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