Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (358959) > Сторінка 1266 з 5983
Фото | Назва | Виробник | Інформація |
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SST25VF010A-33-4I-ZAE | Microchip Technology |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-UFBGA, CSPBGA Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH Clock Frequency: 33 MHz Memory Format: FLASH Supplier Device Package: 8-CSP Part Status: Active Write Cycle Time - Word, Page: 20µs Memory Interface: SPI Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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PIC18F23K22T-I/SO | Microchip Technology |
![]() Packaging: Tape & Reel (TR) Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Speed: 64MHz Program Memory Size: 8KB (4K x 16) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 256 x 8 Core Processor: PIC Data Converters: A/D 19x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V Connectivity: I2C, SPI, UART/USART Peripherals: Brown-out Detect/Reset, HLVD, POR, PWM, WDT Supplier Device Package: 28-SOIC Part Status: Active Number of I/O: 24 DigiKey Programmable: Not Verified |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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PIC18F23K22T-I/SO | Microchip Technology |
![]() Packaging: Cut Tape (CT) Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Speed: 64MHz Program Memory Size: 8KB (4K x 16) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 256 x 8 Core Processor: PIC Data Converters: A/D 19x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V Connectivity: I2C, SPI, UART/USART Peripherals: Brown-out Detect/Reset, HLVD, POR, PWM, WDT Supplier Device Package: 28-SOIC Part Status: Active Number of I/O: 24 DigiKey Programmable: Not Verified |
на замовлення 3031 шт: термін постачання 21-31 дні (днів) |
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DSPIC33CK64MP202-I/2N | Microchip Technology |
![]() Packaging: Tube Package / Case: 28-UQFN Exposed Pad Mounting Type: Surface Mount Speed: 100MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: dsPIC Data Converters: A/D 12x12b; D/A 3x12b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V Connectivity: I2C, IrDA, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, DMA, Motor Control PWM, POR, PWM, QEI, WDT Supplier Device Package: 28-UQFN (6x6) Number of I/O: 21 DigiKey Programmable: Not Verified |
на замовлення 305 шт: термін постачання 21-31 дні (днів) |
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MSCSM120AM50CT1AG | Microchip Technology |
![]() Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 245W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V Vgs(th) (Max) @ Id: 2.7V @ 1mA Supplier Device Package: SP1F Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MSCSM70AM19CT1AG | Microchip Technology |
![]() Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 365W (Tc) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V Vgs(th) (Max) @ Id: 2.4V @ 4mA Supplier Device Package: SP1F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MSCSM120AM31CT1AG | Microchip Technology |
![]() Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 395W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: SP1F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MSCSM70VM19C3AG | Microchip Technology |
![]() Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 365W (Tc) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V Vgs(th) (Max) @ Id: 2.4V @ 4mA Supplier Device Package: SP3F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MSCSM120HM50CT3AG | Microchip Technology |
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на замовлення 2 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||
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MSCSM120AM16CT1AG | Microchip Technology |
![]() Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 745W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 173A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 2mA Supplier Device Package: SP1F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MSCSM120SKM11CT3AG | Microchip Technology |
![]() Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Type: MOSFET Configuration: 1 Phase Voltage - Isolation: 4000Vrms Part Status: Active Current: 254 A Voltage: 1.2 kV |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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MSCSM120DAM11CT3AG | Microchip Technology |
![]() Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Type: MOSFET Configuration: 1 Phase Voltage - Isolation: 4000Vrms Current: 254 A Voltage: 1.2 kV |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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MSCSM70HM19CT3AG | Microchip Technology |
![]() Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 365W (Tc) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V Vgs(th) (Max) @ Id: 2.4V @ 4mA Supplier Device Package: SP3F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MSCSM70AM10CT3AG | Microchip Technology |
![]() Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 690W (Tc) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 241A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V Vgs(th) (Max) @ Id: 2.4V @ 8mA Supplier Device Package: SP3F Part Status: Active |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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MSCSM120HM31CT3AG | Microchip Technology |
Description: SIC 4N-CH 1200V 89A SP3F Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 395W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: SP3F Part Status: Active |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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MSCSM70VM10C4AG | Microchip Technology |
![]() Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 674W (Tc) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 238A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V Vgs(th) (Max) @ Id: 2.4V @ 8mA Supplier Device Package: SP4 Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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MSCSM70TAM19CT3AG | Microchip Technology |
![]() Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 365W (Tc) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V Vgs(th) (Max) @ Id: 2.4V @ 4mA Supplier Device Package: SP3F |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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MSCSM70AM07CT3AG | Microchip Technology |
![]() Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 988W (Tc) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 353A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V Vgs(th) (Max) @ Id: 2.4V @ 12mA Supplier Device Package: SP3F |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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MSCSM120TAM31CT3AG | Microchip Technology |
![]() Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 395W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: SP3F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MSCSM120AM11CT3AG | Microchip Technology |
![]() Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1.067kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 254A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 3mA Supplier Device Package: SP3F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MSCSM120AM08CT3AG | Microchip Technology |
![]() Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1.409kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 337A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 12.08pF @ 1000V Rds On (Max) @ Id, Vgs: 7.8mOhm @ 160A, 20V Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 4mA Supplier Device Package: SP3F Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MSCSM120HM16CT3AG | Microchip Technology |
![]() Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 745W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 173A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 2mA Supplier Device Package: SP3F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MSCSM70TAM10CTPAG | Microchip Technology |
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на замовлення 2 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||
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MSCSM70AM025CT6AG | Microchip Technology |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MSCSM120TAM16CTPAG | Microchip Technology |
![]() Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 728W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 171A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 2mA Supplier Device Package: SP6-P Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MSCSM120AM042CT6AG | Microchip Technology |
![]() Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 2.031kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 495A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 6mA Supplier Device Package: SP6C Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MSCSM70TAM05TPAG | Microchip Technology |
![]() Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Type: MOSFET Configuration: 3 Phase Inverter Part Status: Active Current: 273 A Voltage: 700 V |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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MSCSM70AM025CD3AG | Microchip Technology |
![]() Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 538A (Tc) Supplier Device Package: D3 Part Status: Active |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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MSCSM70AM025CT6LIAG | Microchip Technology |
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на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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MSCSM120AM042CT6LIAG | Microchip Technology |
![]() Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 2.031kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 495A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1kV Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 6mA Supplier Device Package: SP6C LI Part Status: Active |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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MSCSM120AM042CD3AG | Microchip Technology |
![]() Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 2.031kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 495A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 6mA Supplier Device Package: D3 Part Status: Active |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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MSCSM120TAM11CTPAG | Microchip Technology |
![]() Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1.042kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 251A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 3mA Supplier Device Package: SP6-P Part Status: Active |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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MSCSM120AM027CT6AG | Microchip Technology |
![]() Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 2.97kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 733A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 27000pF @1000V Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 9mA Supplier Device Package: SP6C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MSCSM120AM027CD3AG | Microchip Technology |
![]() Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 2.97kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 733A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 27000pF @1000V Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 9mA Supplier Device Package: D3 Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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MSCSM120AM02CT6LIAG | Microchip Technology |
![]() Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 3.75kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 947A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 36240pF @ 1000V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 12mA Supplier Device Package: SP6C LI Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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1N938A | Microchip Technology |
![]() Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Voltage - Zener (Nom) (Vz): 9 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-35 (DO-204AH) Part Status: Active Power - Max: 500 mW |
на замовлення 99 шт: термін постачання 21-31 дні (днів) |
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MART100KP300Ae3 | Microchip Technology |
![]() Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 300V Supplier Device Package: Case 5A (DO-204AR) Unidirectional Channels: 1 Voltage - Breakdown (Min): 333V Voltage - Clamping (Max) @ Ipp: 590V Power - Peak Pulse: 100000W (100kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JAN1N823-1 | Microchip Technology |
![]() Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Military Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V Qualification: MIL-PRF-19500/159 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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AT28HC256-70SU-T | Microchip Technology |
![]() Packaging: Tape & Reel (TR) Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TC) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Memory Format: EEPROM Supplier Device Package: 28-SOIC Write Cycle Time - Word, Page: 10ms Memory Interface: Parallel Access Time: 70 ns Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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AT28HC256-70SU-T | Microchip Technology |
![]() Packaging: Cut Tape (CT) Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TC) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Memory Format: EEPROM Supplier Device Package: 28-SOIC Write Cycle Time - Word, Page: 10ms Memory Interface: Parallel Access Time: 70 ns Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
JANTXV2N5339U3 | Microchip Technology |
Description: TRANS NPN 100V 5A U-3 Packaging: Bulk Package / Case: TO-276AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V Supplier Device Package: U-3 (TO-276AA) Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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AT27C080-12DC | Microchip Technology |
![]() Packaging: Tube Package / Case: 32-CDIP (0.600", 15.24mm) Mounting Type: Through Hole Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TC) Voltage - Supply: 4.5V ~ 5.5V Technology: EPROM - UV Memory Format: EPROM Supplier Device Package: 32-CDIP Memory Interface: Parallel Access Time: 120 ns Memory Organization: 1M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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AT27C080-90DC | Microchip Technology |
![]() Packaging: Tube Package / Case: 32-CDIP (0.600", 15.24mm) Mounting Type: Through Hole Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TC) Voltage - Supply: 4.5V ~ 5.5V Technology: EPROM - UV Memory Format: EPROM Supplier Device Package: 32-CDIP Memory Interface: Parallel Access Time: 90 ns Memory Organization: 1M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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AT27C080-12RC | Microchip Technology |
![]() Packaging: Tube Package / Case: 32-SOIC (0.445", 11.30mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TC) Voltage - Supply: 4.5V ~ 5.5V Technology: EPROM - OTP Memory Format: EPROM Supplier Device Package: 32-SOIC Memory Interface: Parallel Access Time: 120 ns Memory Organization: 1M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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AT27C080-12RI | Microchip Technology |
![]() Packaging: Tube Package / Case: 32-SOIC (0.445", 11.30mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TC) Voltage - Supply: 4.5V ~ 5.5V Technology: EPROM - OTP Memory Format: EPROM Supplier Device Package: 32-SOIC Memory Interface: Parallel Access Time: 120 ns Memory Organization: 1M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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AT27C080-15RC | Microchip Technology |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||
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AT27C080-15RI | Microchip Technology |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||
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AT27C080-90RC | Microchip Technology |
![]() Packaging: Tube Package / Case: 32-SOIC (0.445", 11.30mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TC) Voltage - Supply: 4.5V ~ 5.5V Technology: EPROM - OTP Memory Format: EPROM Supplier Device Package: 32-SOIC Memory Interface: Parallel Access Time: 90 ns Memory Organization: 1M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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AT27C080-90RI | Microchip Technology |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||
ATMXT1664T3-C2U035 | Microchip Technology |
![]() Packaging: Tray Package / Case: 162-UFBGA Mounting Type: Surface Mount Interface: I2C, SPI, USB Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.135V ~ 3.465V Resolution (Bits): 12 b Supplier Device Package: 162-UFBGA (10x5) Voltage Reference: Internal Touchscreen: 2 Wire Capacitive Part Status: Active Current - Supply: 11.28 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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MIC2505YM-TR | Microchip Technology |
![]() Features: Slew Rate Controlled, Status Flag Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 30mOhm Input Type: Non-Inverting Voltage - Load: 2.7V ~ 7.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: 8-SOIC Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, UVLO |
на замовлення 6876 шт: термін постачання 21-31 дні (днів) |
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ATSAML10E16A-AU | Microchip Technology |
![]() Packaging: Tray Package / Case: 32-TQFP Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 64KB (64K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: ARM® Cortex®-M23 Data Converters: A/D 10x12b; D/A 1x10b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.63V Connectivity: I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT Supplier Device Package: 32-TQFP (7x7) Part Status: Active Number of I/O: 25 DigiKey Programmable: Not Verified |
на замовлення 5168 шт: термін постачання 21-31 дні (днів) |
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DSPIC33CH128MP202-I/SS | Microchip Technology |
![]() Packaging: Tube Package / Case: 28-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Speed: 180MHz, 200MHz Program Memory Size: 152KB (152K x 8) RAM Size: 20K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH, PRAM Core Processor: dsPIC Data Converters: A/D 23x12b; D/A 4x12b Core Size: 16-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V Connectivity: I2C, IrDA, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, DMA, Motor Control PWM, POR, PWM, QEI, WDT Supplier Device Package: 28-SSOP Part Status: Active Number of I/O: 21 DigiKey Programmable: Not Verified |
на замовлення 540 шт: термін постачання 21-31 дні (днів) |
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MSMCJ8.5A/TR | Microchip Technology |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||
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JAN1N5297UR-1 | Microchip Technology |
![]() Packaging: Bulk Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Supplier Device Package: DO-213AB (MELF, LL41) Grade: Military Part Status: Active Power - Max: 500mW Voltage - Anode - Cathode (Vak)(Max): 100V Regulator Current (Max): 1.1mA Voltage - Limiting (Max): 1.35V Qualification: MIL-PRF-19500/463 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANTXV1N5297UR-1 | Microchip Technology |
![]() Packaging: Bulk Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Supplier Device Package: DO-213AB (MELF, LL41) Part Status: Discontinued at Digi-Key Power - Max: 500mW Voltage - Anode - Cathode (Vak)(Max): 100V Regulator Current (Max): 1.1mA Voltage - Limiting (Max): 1.35V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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24FC16T-I/SN | Microchip Technology |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 450 ns Memory Organization: 2K x 8 DigiKey Programmable: Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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24FC16T-I/SN | Microchip Technology |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 450 ns Memory Organization: 2K x 8 DigiKey Programmable: Verified |
на замовлення 1858 шт: термін постачання 21-31 дні (днів) |
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24FC16H-I/SN | Microchip Technology |
![]() Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 450 ns Memory Organization: 2K x 8 DigiKey Programmable: Not Verified |
на замовлення 1108 шт: термін постачання 21-31 дні (днів) |
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24FC16-I/SN | Microchip Technology |
![]() Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 450 ns Memory Organization: 2K x 8 DigiKey Programmable: Verified |
на замовлення 1590 шт: термін постачання 21-31 дні (днів) |
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SST25VF010A-33-4I-ZAE |
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Виробник: Microchip Technology
Description: IC FLASH 1MBIT SPI 33MHZ 8CSP
Packaging: Tape & Reel (TR)
Package / Case: 8-UFBGA, CSPBGA
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH
Clock Frequency: 33 MHz
Memory Format: FLASH
Supplier Device Package: 8-CSP
Part Status: Active
Write Cycle Time - Word, Page: 20µs
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 1MBIT SPI 33MHZ 8CSP
Packaging: Tape & Reel (TR)
Package / Case: 8-UFBGA, CSPBGA
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH
Clock Frequency: 33 MHz
Memory Format: FLASH
Supplier Device Package: 8-CSP
Part Status: Active
Write Cycle Time - Word, Page: 20µs
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
PIC18F23K22T-I/SO |
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Виробник: Microchip Technology
Description: IC MCU 8BIT 8KB FLASH 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 8KB (4K x 16)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 19x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, HLVD, POR, PWM, WDT
Supplier Device Package: 28-SOIC
Part Status: Active
Number of I/O: 24
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB FLASH 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 8KB (4K x 16)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 19x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, HLVD, POR, PWM, WDT
Supplier Device Package: 28-SOIC
Part Status: Active
Number of I/O: 24
DigiKey Programmable: Not Verified
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
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1600+ | 152.65 грн |
PIC18F23K22T-I/SO |
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Виробник: Microchip Technology
Description: IC MCU 8BIT 8KB FLASH 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 8KB (4K x 16)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 19x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, HLVD, POR, PWM, WDT
Supplier Device Package: 28-SOIC
Part Status: Active
Number of I/O: 24
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB FLASH 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 8KB (4K x 16)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 19x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, HLVD, POR, PWM, WDT
Supplier Device Package: 28-SOIC
Part Status: Active
Number of I/O: 24
DigiKey Programmable: Not Verified
на замовлення 3031 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 184.18 грн |
25+ | 162.47 грн |
100+ | 147.00 грн |
DSPIC33CK64MP202-I/2N |
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Виробник: Microchip Technology
Description: IC MCU 16BIT 64KB FLASH 28UQFN
Packaging: Tube
Package / Case: 28-UQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: dsPIC
Data Converters: A/D 12x12b; D/A 3x12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, Motor Control PWM, POR, PWM, QEI, WDT
Supplier Device Package: 28-UQFN (6x6)
Number of I/O: 21
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 64KB FLASH 28UQFN
Packaging: Tube
Package / Case: 28-UQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: dsPIC
Data Converters: A/D 12x12b; D/A 3x12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, Motor Control PWM, POR, PWM, QEI, WDT
Supplier Device Package: 28-UQFN (6x6)
Number of I/O: 21
DigiKey Programmable: Not Verified
на замовлення 305 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 226.26 грн |
25+ | 199.78 грн |
100+ | 180.72 грн |
MSCSM120AM50CT1AG |
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Виробник: Microchip Technology
Description: SIC 2N-CH 1200V 55A SP1F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 245W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: SP1F
Part Status: Active
Description: SIC 2N-CH 1200V 55A SP1F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 245W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: SP1F
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
MSCSM70AM19CT1AG |
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Виробник: Microchip Technology
Description: MOSFET 2N-CH 700V 124A SP1F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 365W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Supplier Device Package: SP1F
Description: MOSFET 2N-CH 700V 124A SP1F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 365W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Supplier Device Package: SP1F
товару немає в наявності
В кошику
од. на суму грн.
MSCSM120AM31CT1AG |
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Виробник: Microchip Technology
Description: SIC 2N-CH 1200V 89A SP1F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 395W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SP1F
Description: SIC 2N-CH 1200V 89A SP1F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 395W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SP1F
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В кошику
од. на суму грн.
MSCSM70VM19C3AG |
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Виробник: Microchip Technology
Description: MOSFET 2N-CH 700V 124A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 365W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Supplier Device Package: SP3F
Description: MOSFET 2N-CH 700V 124A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 365W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Supplier Device Package: SP3F
товару немає в наявності
В кошику
од. на суму грн.
MSCSM120HM50CT3AG |
![]() |
Виробник: Microchip Technology
Description: PM-MOSFET-SIC-SBD~-SP3F
Description: PM-MOSFET-SIC-SBD~-SP3F
на замовлення 2 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
MSCSM120AM16CT1AG |
![]() |
Виробник: Microchip Technology
Description: SIC 2N-CH 1200V 173A SP1F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 745W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 2mA
Supplier Device Package: SP1F
Description: SIC 2N-CH 1200V 173A SP1F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 745W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 2mA
Supplier Device Package: SP1F
товару немає в наявності
В кошику
од. на суму грн.
MSCSM120SKM11CT3AG |
![]() |
Виробник: Microchip Technology
Description: PM-MOSFET-SIC-SBD~-SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Type: MOSFET
Configuration: 1 Phase
Voltage - Isolation: 4000Vrms
Part Status: Active
Current: 254 A
Voltage: 1.2 kV
Description: PM-MOSFET-SIC-SBD~-SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Type: MOSFET
Configuration: 1 Phase
Voltage - Isolation: 4000Vrms
Part Status: Active
Current: 254 A
Voltage: 1.2 kV
на замовлення 4 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 12655.43 грн |
MSCSM120DAM11CT3AG |
![]() |
Виробник: Microchip Technology
Description: PM-MOSFET-SIC-SBD~-SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Type: MOSFET
Configuration: 1 Phase
Voltage - Isolation: 4000Vrms
Current: 254 A
Voltage: 1.2 kV
Description: PM-MOSFET-SIC-SBD~-SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Type: MOSFET
Configuration: 1 Phase
Voltage - Isolation: 4000Vrms
Current: 254 A
Voltage: 1.2 kV
на замовлення 6 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 19113.74 грн |
MSCSM70HM19CT3AG |
![]() |
Виробник: Microchip Technology
Description: MOSFET 4N-CH 700V 124A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 365W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Supplier Device Package: SP3F
Description: MOSFET 4N-CH 700V 124A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 365W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Supplier Device Package: SP3F
товару немає в наявності
В кошику
од. на суму грн.
MSCSM70AM10CT3AG |
![]() |
Виробник: Microchip Technology
Description: MOSFET 2N-CH 700V 241A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 690W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 241A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Supplier Device Package: SP3F
Part Status: Active
Description: MOSFET 2N-CH 700V 241A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 690W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 241A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Supplier Device Package: SP3F
Part Status: Active
на замовлення 4 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 19367.00 грн |
MSCSM120HM31CT3AG |
Виробник: Microchip Technology
Description: SIC 4N-CH 1200V 89A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 395W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SP3F
Part Status: Active
Description: SIC 4N-CH 1200V 89A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 395W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SP3F
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 19820.31 грн |
MSCSM70VM10C4AG |
![]() |
Виробник: Microchip Technology
Description: PM-MOSFET-SIC-SBD~-SP4
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 674W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Supplier Device Package: SP4
Part Status: Active
Description: PM-MOSFET-SIC-SBD~-SP4
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 674W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Supplier Device Package: SP4
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 24724.18 грн |
MSCSM70TAM19CT3AG |
![]() |
Виробник: Microchip Technology
Description: MOSFET 6N-CH 700V 124A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 365W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Supplier Device Package: SP3F
Description: MOSFET 6N-CH 700V 124A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 365W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Supplier Device Package: SP3F
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 17891.95 грн |
MSCSM70AM07CT3AG |
![]() |
Виробник: Microchip Technology
Description: MOSFET 2N-CH 700V 353A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 988W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 353A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 12mA
Supplier Device Package: SP3F
Description: MOSFET 2N-CH 700V 353A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 988W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 353A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 12mA
Supplier Device Package: SP3F
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 27608.39 грн |
MSCSM120TAM31CT3AG |
![]() |
Виробник: Microchip Technology
Description: SIC 6N-CH 1200V 89A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 395W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SP3F
Description: SIC 6N-CH 1200V 89A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 395W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SP3F
товару немає в наявності
В кошику
од. на суму грн.
MSCSM120AM11CT3AG |
![]() |
Виробник: Microchip Technology
Description: SIC 2N-CH 1200V 254A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.067kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 254A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Supplier Device Package: SP3F
Description: SIC 2N-CH 1200V 254A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.067kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 254A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Supplier Device Package: SP3F
товару немає в наявності
В кошику
од. на суму грн.
MSCSM120AM08CT3AG |
![]() |
Виробник: Microchip Technology
Description: SIC 2N-CH 1200V 337A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.409kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 337A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12.08pF @ 1000V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 160A, 20V
Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 4mA
Supplier Device Package: SP3F
Part Status: Active
Description: SIC 2N-CH 1200V 337A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.409kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 337A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12.08pF @ 1000V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 160A, 20V
Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 4mA
Supplier Device Package: SP3F
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
MSCSM120HM16CT3AG |
![]() |
Виробник: Microchip Technology
Description: SIC 4N-CH 1200V 173A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 745W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 2mA
Supplier Device Package: SP3F
Description: SIC 4N-CH 1200V 173A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 745W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 2mA
Supplier Device Package: SP3F
товару немає в наявності
В кошику
од. на суму грн.
MSCSM70TAM10CTPAG |
![]() |
Виробник: Microchip Technology
Description: PM-MOSFET-SIC-SBD~-SP6P
Description: PM-MOSFET-SIC-SBD~-SP6P
на замовлення 2 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
MSCSM70AM025CT6AG |
![]() |
Виробник: Microchip Technology
Description: PM-MOSFET-SIC-SBD~-SP6C
Description: PM-MOSFET-SIC-SBD~-SP6C
товару немає в наявності
В кошику
од. на суму грн.
MSCSM120TAM16CTPAG |
![]() |
Виробник: Microchip Technology
Description: SIC 6N-CH 1200V 171A SP6-P
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 728W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 2mA
Supplier Device Package: SP6-P
Part Status: Active
Description: SIC 6N-CH 1200V 171A SP6-P
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 728W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 2mA
Supplier Device Package: SP6-P
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
MSCSM120AM042CT6AG |
![]() |
Виробник: Microchip Technology
Description: SIC 2N-CH 1200V 495A SP6C
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.031kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Supplier Device Package: SP6C
Part Status: Active
Description: SIC 2N-CH 1200V 495A SP6C
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.031kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Supplier Device Package: SP6C
Part Status: Active
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В кошику
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MSCSM70TAM05TPAG |
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Виробник: Microchip Technology
Description: PM-MOSFET-SIC~-SP6P
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Type: MOSFET
Configuration: 3 Phase Inverter
Part Status: Active
Current: 273 A
Voltage: 700 V
Description: PM-MOSFET-SIC~-SP6P
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Type: MOSFET
Configuration: 3 Phase Inverter
Part Status: Active
Current: 273 A
Voltage: 700 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 64667.27 грн |
MSCSM70AM025CD3AG |
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Виробник: Microchip Technology
Description: SIC 700V 538A D3
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 538A (Tc)
Supplier Device Package: D3
Part Status: Active
Description: SIC 700V 538A D3
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 538A (Tc)
Supplier Device Package: D3
Part Status: Active
на замовлення 4 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 63872.58 грн |
MSCSM70AM025CT6LIAG |
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Виробник: Microchip Technology
Description: PM-MOSFET-SIC-SBD~-SP6C LI
Description: PM-MOSFET-SIC-SBD~-SP6C LI
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 67198.20 грн |
MSCSM120AM042CT6LIAG |
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Виробник: Microchip Technology
Description: MOSFET 2N-CH 1200V 495A SP6C LI
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.031kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1kV
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Supplier Device Package: SP6C LI
Part Status: Active
Description: MOSFET 2N-CH 1200V 495A SP6C LI
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.031kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1kV
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Supplier Device Package: SP6C LI
Part Status: Active
на замовлення 4 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 45932.21 грн |
MSCSM120AM042CD3AG |
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Виробник: Microchip Technology
Description: MOSFET 2N-CH 1200V 495A D3
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.031kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Supplier Device Package: D3
Part Status: Active
Description: MOSFET 2N-CH 1200V 495A D3
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.031kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Supplier Device Package: D3
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 43974.47 грн |
MSCSM120TAM11CTPAG |
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Виробник: Microchip Technology
Description: SIC 6N-CH 1200V 251A SP6-P
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.042kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Supplier Device Package: SP6-P
Part Status: Active
Description: SIC 6N-CH 1200V 251A SP6-P
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.042kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Supplier Device Package: SP6-P
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 81077.81 грн |
MSCSM120AM027CT6AG |
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Виробник: Microchip Technology
Description: SIC 2N-CH 1200V 733A SP6C
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.97kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @1000V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Supplier Device Package: SP6C
Description: SIC 2N-CH 1200V 733A SP6C
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.97kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @1000V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Supplier Device Package: SP6C
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MSCSM120AM027CD3AG |
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Виробник: Microchip Technology
Description: SIC 2N-CH 1200V 733A D3
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.97kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @1000V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Supplier Device Package: D3
Part Status: Active
Description: SIC 2N-CH 1200V 733A D3
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.97kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @1000V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Supplier Device Package: D3
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 99022.16 грн |
MSCSM120AM02CT6LIAG |
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Виробник: Microchip Technology
Description: MOSFET 2N-CH 1200V 947A SP6C LI
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 3.75kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 947A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 36240pF @ 1000V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 12mA
Supplier Device Package: SP6C LI
Part Status: Active
Description: MOSFET 2N-CH 1200V 947A SP6C LI
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 3.75kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 947A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 36240pF @ 1000V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 12mA
Supplier Device Package: SP6C LI
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 117826.28 грн |
1N938A |
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Виробник: Microchip Technology
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
на замовлення 99 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 720.06 грн |
MART100KP300Ae3 |
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Виробник: Microchip Technology
Description: TVS DIODE 300VWM 590VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 333V
Voltage - Clamping (Max) @ Ipp: 590V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 300VWM 590VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 333V
Voltage - Clamping (Max) @ Ipp: 590V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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JAN1N823-1 |
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Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO204AH
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Qualification: MIL-PRF-19500/159
Description: DIODE ZENER 6.2V 500MW DO204AH
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Qualification: MIL-PRF-19500/159
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AT28HC256-70SU-T |
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Виробник: Microchip Technology
Description: IC EEPROM 256KBIT PAR 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 10ms
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 256KBIT PAR 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 10ms
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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AT28HC256-70SU-T |
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Виробник: Microchip Technology
Description: IC EEPROM 256KBIT PAR 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 10ms
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 256KBIT PAR 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 10ms
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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JANTXV2N5339U3 |
Виробник: Microchip Technology
Description: TRANS NPN 100V 5A U-3
Packaging: Bulk
Package / Case: TO-276AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Supplier Device Package: U-3 (TO-276AA)
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Description: TRANS NPN 100V 5A U-3
Packaging: Bulk
Package / Case: TO-276AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Supplier Device Package: U-3 (TO-276AA)
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
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AT27C080-12DC |
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Виробник: Microchip Technology
Description: IC EPROM 8MBIT PARALLEL 32CDIP
Packaging: Tube
Package / Case: 32-CDIP (0.600", 15.24mm)
Mounting Type: Through Hole
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EPROM - UV
Memory Format: EPROM
Supplier Device Package: 32-CDIP
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Description: IC EPROM 8MBIT PARALLEL 32CDIP
Packaging: Tube
Package / Case: 32-CDIP (0.600", 15.24mm)
Mounting Type: Through Hole
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EPROM - UV
Memory Format: EPROM
Supplier Device Package: 32-CDIP
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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AT27C080-90DC |
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Виробник: Microchip Technology
Description: IC EPROM 8MBIT PARALLEL 32CDIP
Packaging: Tube
Package / Case: 32-CDIP (0.600", 15.24mm)
Mounting Type: Through Hole
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EPROM - UV
Memory Format: EPROM
Supplier Device Package: 32-CDIP
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Description: IC EPROM 8MBIT PARALLEL 32CDIP
Packaging: Tube
Package / Case: 32-CDIP (0.600", 15.24mm)
Mounting Type: Through Hole
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EPROM - UV
Memory Format: EPROM
Supplier Device Package: 32-CDIP
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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AT27C080-12RC |
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Виробник: Microchip Technology
Description: IC EPROM 8MBIT PARALLEL 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EPROM - OTP
Memory Format: EPROM
Supplier Device Package: 32-SOIC
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Description: IC EPROM 8MBIT PARALLEL 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EPROM - OTP
Memory Format: EPROM
Supplier Device Package: 32-SOIC
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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AT27C080-12RI |
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Виробник: Microchip Technology
Description: IC EPROM 8MBIT PARALLEL 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EPROM - OTP
Memory Format: EPROM
Supplier Device Package: 32-SOIC
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Description: IC EPROM 8MBIT PARALLEL 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EPROM - OTP
Memory Format: EPROM
Supplier Device Package: 32-SOIC
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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AT27C080-15RC |
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Виробник: Microchip Technology
Description: IC EPROM 8M PARALLEL 32SOIC
Description: IC EPROM 8M PARALLEL 32SOIC
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AT27C080-15RI |
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Виробник: Microchip Technology
Description: IC EPROM 8M PARALLEL 32SOIC
Description: IC EPROM 8M PARALLEL 32SOIC
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AT27C080-90RC |
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Виробник: Microchip Technology
Description: IC EPROM 8MBIT PARALLEL 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EPROM - OTP
Memory Format: EPROM
Supplier Device Package: 32-SOIC
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Description: IC EPROM 8MBIT PARALLEL 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EPROM - OTP
Memory Format: EPROM
Supplier Device Package: 32-SOIC
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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AT27C080-90RI |
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Виробник: Microchip Technology
Description: IC EPROM 8M PARALLEL 32SOIC
Description: IC EPROM 8M PARALLEL 32SOIC
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ATMXT1664T3-C2U035 |
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Виробник: Microchip Technology
Description: 1664 CHANNEL TOUCHSCREEN CONTROL
Packaging: Tray
Package / Case: 162-UFBGA
Mounting Type: Surface Mount
Interface: I2C, SPI, USB
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Resolution (Bits): 12 b
Supplier Device Package: 162-UFBGA (10x5)
Voltage Reference: Internal
Touchscreen: 2 Wire Capacitive
Part Status: Active
Current - Supply: 11.28 mA
Description: 1664 CHANNEL TOUCHSCREEN CONTROL
Packaging: Tray
Package / Case: 162-UFBGA
Mounting Type: Surface Mount
Interface: I2C, SPI, USB
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Resolution (Bits): 12 b
Supplier Device Package: 162-UFBGA (10x5)
Voltage Reference: Internal
Touchscreen: 2 Wire Capacitive
Part Status: Active
Current - Supply: 11.28 mA
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MIC2505YM-TR |
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Виробник: Microchip Technology
Description: IC PWR SWITCH N-CHAN 1:1 8SOIC
Features: Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 30mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 7.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, UVLO
Description: IC PWR SWITCH N-CHAN 1:1 8SOIC
Features: Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 30mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 7.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, UVLO
на замовлення 6876 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 201.65 грн |
25+ | 162.35 грн |
100+ | 147.78 грн |
ATSAML10E16A-AU |
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Виробник: Microchip Technology
Description: IC MCU 32BIT 64KB FLASH 32TQFP
Packaging: Tray
Package / Case: 32-TQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M23
Data Converters: A/D 10x12b; D/A 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.63V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 32-TQFP (7x7)
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 32TQFP
Packaging: Tray
Package / Case: 32-TQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M23
Data Converters: A/D 10x12b; D/A 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.63V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 32-TQFP (7x7)
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
на замовлення 5168 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 223.88 грн |
25+ | 197.61 грн |
100+ | 179.26 грн |
DSPIC33CH128MP202-I/SS |
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Виробник: Microchip Technology
Description: IC MCU 16BIT 152KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 180MHz, 200MHz
Program Memory Size: 152KB (152K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH, PRAM
Core Processor: dsPIC
Data Converters: A/D 23x12b; D/A 4x12b
Core Size: 16-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, Motor Control PWM, POR, PWM, QEI, WDT
Supplier Device Package: 28-SSOP
Part Status: Active
Number of I/O: 21
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 152KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 180MHz, 200MHz
Program Memory Size: 152KB (152K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH, PRAM
Core Processor: dsPIC
Data Converters: A/D 23x12b; D/A 4x12b
Core Size: 16-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, Motor Control PWM, POR, PWM, QEI, WDT
Supplier Device Package: 28-SSOP
Part Status: Active
Number of I/O: 21
DigiKey Programmable: Not Verified
на замовлення 540 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 323.11 грн |
25+ | 285.31 грн |
100+ | 258.91 грн |
MSMCJ8.5A/TR |
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Виробник: Microchip Technology
Description: TVS
Description: TVS
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JAN1N5297UR-1 |
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Виробник: Microchip Technology
Description: DIODE CUR REG 100V 1.1MA 500MW
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Grade: Military
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.1mA
Voltage - Limiting (Max): 1.35V
Qualification: MIL-PRF-19500/463
Description: DIODE CUR REG 100V 1.1MA 500MW
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Grade: Military
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.1mA
Voltage - Limiting (Max): 1.35V
Qualification: MIL-PRF-19500/463
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JANTXV1N5297UR-1 |
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Виробник: Microchip Technology
Description: DIODE CUR REG 100V 1.1MA 500MW
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Discontinued at Digi-Key
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.1mA
Voltage - Limiting (Max): 1.35V
Description: DIODE CUR REG 100V 1.1MA 500MW
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Discontinued at Digi-Key
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.1mA
Voltage - Limiting (Max): 1.35V
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24FC16T-I/SN |
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Виробник: Microchip Technology
Description: IC EEPROM 16KBIT I2C 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 2K x 8
DigiKey Programmable: Verified
Description: IC EEPROM 16KBIT I2C 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 2K x 8
DigiKey Programmable: Verified
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24FC16T-I/SN |
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Виробник: Microchip Technology
Description: IC EEPROM 16KBIT I2C 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 2K x 8
DigiKey Programmable: Verified
Description: IC EEPROM 16KBIT I2C 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 2K x 8
DigiKey Programmable: Verified
на замовлення 1858 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
14+ | 23.02 грн |
25+ | 20.27 грн |
100+ | 19.71 грн |
24FC16H-I/SN |
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Виробник: Microchip Technology
Description: IC EEPROM 16KBIT I2C 1MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 16KBIT I2C 1MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
на замовлення 1108 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
15+ | 21.44 грн |
25+ | 18.87 грн |
100+ | 18.36 грн |
24FC16-I/SN |
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Виробник: Microchip Technology
Description: IC EEPROM 16KBIT I2C 1MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 2K x 8
DigiKey Programmable: Verified
Description: IC EEPROM 16KBIT I2C 1MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 2K x 8
DigiKey Programmable: Verified
на замовлення 1590 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
15+ | 21.44 грн |
25+ | 18.87 грн |
100+ | 18.36 грн |