Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (332352) > Сторінка 1312 з 5540
Фото | Назва | Виробник | Інформація |
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MXLSMCJ15CAe3 | Microchip Technology | Description: TVS DIODE 15VWM 24.4VC DO214AB |
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MXLSMCJ160CA | Microchip Technology | Description: TVS DIODE 160VWM 259VC DO214AB |
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MXLSMCJ160CAe3 | Microchip Technology | Description: TVS DIODE 160VWM 259VC DO214AB |
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MXLSMLJ26A | Microchip Technology | Description: TVS DIODE 26VWM 42.1VC DO214AB |
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MXLSMLJ36AE3 | Microchip Technology |
Description: TVS DIODE 36VWM 58.1VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 51.6A Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: DO-214AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 40V Voltage - Clamping (Max) @ Ipp: 58.1V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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DSC1001CL5-014.3181 | Microchip Technology | Description: MEMS OSC XO 14.3180MHZ CMOS SMD |
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MCP4532T-502E/MS | Microchip Technology |
Description: IC DGTL POT 5KOHM 129TAP 8MSOP Packaging: Tape & Reel (TR) Resistance (Ohms): 5k Tolerance: ±20% Features: Selectable Address Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Memory Type: Volatile Interface: I2C Configuration: Rheostat Operating Temperature: -40°C ~ 125°C Number of Taps: 129 Voltage - Supply: 1.8V ~ 5.5V Taper: Linear Supplier Device Package: 8-MSOP Resistance - Wiper (Ohms) (Typ): 75 Temperature Coefficient (Typ): 150ppm/°C Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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PIC32MZ0512EFK064-E/PT | Microchip Technology | Description: IC MCU 32BIT 512KB FLASH 64TQFP |
на замовлення 211 шт: термін постачання 21-31 дні (днів) |
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ATSAME70J19B-AN | Microchip Technology | Description: IC MCU 32BIT 512KB FLASH 64LQFP |
на замовлення 303 шт: термін постачання 21-31 дні (днів) |
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1N6159US | Microchip Technology | Description: TVS DIODE |
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SY100EL16VCKG | Microchip Technology |
Description: IC RCVR DIFF 3.3/5V 8-MSOP Packaging: Tube Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Number of Bits: 1 Logic Type: Differential Receiver Operating Temperature: -40°C ~ 85°C Supply Voltage: 3.3V, 5V Supplier Device Package: 8-MSOP Part Status: Active |
на замовлення 45 шт: термін постачання 21-31 дні (днів) |
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SY100EL16VSKG-TR | Microchip Technology |
Description: IC RCVR DIFF 3.3/5V 8-MSOP Packaging: Bulk Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Number of Bits: 1 Logic Type: Differential Receiver Operating Temperature: -40°C ~ 85°C Supply Voltage: 3.3V, 5V Supplier Device Package: 8-MSOP |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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2N5429 | Microchip Technology | Description: NPN TRANSISTOR |
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MXSMCJ12A | Microchip Technology |
Description: TVS DIODE 12VWM 19.9VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 75.3A Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: DO-214AB (SMCJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 13.3V Voltage - Clamping (Max) @ Ipp: 19.9V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active Grade: Military Qualification: MIL-PRF-19500 |
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MCP1799T-3302H/DB | Microchip Technology |
Description: IC REG LINEAR 3.3V 80MA SOT223-3 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 80mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 45 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: SOT-223-3 Voltage - Output (Min/Fixed): 3.3V Part Status: Active PSRR: 70dB ~ 35dB (100Hz ~ 100kHz) Voltage Dropout (Max): 1.1V @ 80mA Protection Features: Over Current, Over Temperature, Short Circuit Current - Supply (Max): 110 µA Grade: Automotive Qualification: AEC-Q100 |
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MCP1799T-3302H/DB | Microchip Technology |
Description: IC REG LINEAR 3.3V 80MA SOT223-3 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 80mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 45 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: SOT-223-3 Voltage - Output (Min/Fixed): 3.3V Part Status: Active PSRR: 70dB ~ 35dB (100Hz ~ 100kHz) Voltage Dropout (Max): 1.1V @ 80mA Protection Features: Over Current, Over Temperature, Short Circuit Current - Supply (Max): 110 µA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1093 шт: термін постачання 21-31 дні (днів) |
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MCP1799-3302H/DB | Microchip Technology |
Description: IC REG LINEAR 3.3V 80MA SOT223-3 Packaging: Tube Package / Case: TO-261-4, TO-261AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 80mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 45 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: SOT-223-3 Voltage - Output (Min/Fixed): 3.3V Part Status: Active PSRR: 70dB ~ 35dB (100Hz ~ 100kHz) Voltage Dropout (Max): 1.1V @ 80mA Protection Features: Over Current, Over Temperature, Short Circuit Current - Supply (Max): 110 µA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 113 шт: термін постачання 21-31 дні (днів) |
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MCP1799T-5002H/TT | Microchip Technology |
Description: IC REG LINEAR 5V 80MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 80mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 45 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: SOT-23-3 Voltage - Output (Min/Fixed): 5V Part Status: Active PSRR: 70dB ~ 35dB (100Hz ~ 100kHz) Voltage Dropout (Max): 1.1V @ 80mA Protection Features: Over Current, Over Temperature, Short Circuit Current - Supply (Max): 110 µA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MCP1799T-5002H/TT | Microchip Technology |
Description: IC REG LINEAR 5V 80MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 80mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 45 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: SOT-23-3 Voltage - Output (Min/Fixed): 5V Part Status: Active PSRR: 70dB ~ 35dB (100Hz ~ 100kHz) Voltage Dropout (Max): 1.1V @ 80mA Protection Features: Over Current, Over Temperature, Short Circuit Current - Supply (Max): 110 µA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 5205 шт: термін постачання 21-31 дні (днів) |
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ATSAM4S2BA-AUR | Microchip Technology |
Description: IC MCU 32BIT 128KB FLASH 64LQFP Packaging: Tape & Reel (TR) Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 120MHz Program Memory Size: 128KB (128K x 8) RAM Size: 64K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4 Data Converters: A/D 16x12b; D/A 2x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V Connectivity: I²C, IrDA, Memory Card, SPI, SSC, UART/USART, USB Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT Supplier Device Package: 64-LQFP (10x10) Part Status: Active Number of I/O: 47 DigiKey Programmable: Not Verified |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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ATSAM4S2BA-AUR | Microchip Technology |
Description: IC MCU 32BIT 128KB FLASH 64LQFP Packaging: Cut Tape (CT) Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 120MHz Program Memory Size: 128KB (128K x 8) RAM Size: 64K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4 Data Converters: A/D 16x12b; D/A 2x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V Connectivity: I²C, IrDA, Memory Card, SPI, SSC, UART/USART, USB Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT Supplier Device Package: 64-LQFP (10x10) Part Status: Active Number of I/O: 47 DigiKey Programmable: Not Verified |
на замовлення 2857 шт: термін постачання 21-31 дні (днів) |
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JAN1N6044A | Microchip Technology | Description: TVS DIODE 13VWM 22.5VC DO13 |
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JAN1N6047A | Microchip Technology | Description: TVS DIODE 18VWM 30.6VC DO13 |
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JANTX1N6048A | Microchip Technology | Description: TVS DIODE 20VWM 33.2VC DO13 |
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JANTX1N6041A | Microchip Technology | Description: TVS DIODE 10VWM 16.7VC DO13 |
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JANTX1N6042A | Microchip Technology | Description: TVS DIODE 11VWM 18.2VC DO13 |
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JANTX1N6044A | Microchip Technology | Description: TVS DIODE 13VWM 22.5VC DO13 |
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JANTX1N6046A | Microchip Technology | Description: TVS DIODE 17VWM 27.7VC DO13 |
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JANTX1N6047A | Microchip Technology | Description: TVS DIODE 18VWM 30.6VC DO13 |
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JANTXV1N6041A | Microchip Technology | Description: TVS DIODE 10VWM 16.7VC DO13 |
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JANTXV1N6047A | Microchip Technology | Description: TVS DIODE 18VWM 30.6VC DO13 |
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JANTX1N6040A | Microchip Technology | Description: TVS DIODE 9VWM 15.6VC DO13 |
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MXLSMCJ30CA | Microchip Technology |
Description: TVS DIODE 30VWM 48.4VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 31A Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: DO-214AB (SMCJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 33.3V Voltage - Clamping (Max) @ Ipp: 48.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active Grade: Military Qualification: MIL-PRF-19500 |
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APT8020LLLG | Microchip Technology | Description: MOSFET N-CH 800V 38A TO264 |
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AT25040B-MAPD-E | Microchip Technology |
Description: IC EEPROM 4KBIT SPI 5MHZ 8UDFN Packaging: Tape & Reel (TR) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 5 MHz Memory Format: EEPROM Supplier Device Package: 8-UDFN (2x3) Grade: Automotive Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 512 x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
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AT25040B-MAPD-T | Microchip Technology |
Description: IC EEPROM 4KBIT SPI 5MHZ 8UDFN Packaging: Tape & Reel (TR) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 5 MHz Memory Format: EEPROM Supplier Device Package: 8-UDFN (2x3) Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 512 x 8 Grade: Automotive DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
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AT25040B-SSPD-T | Microchip Technology |
Description: IC EEPROM 4KBIT SPI 5MHZ 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 5 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 512 x 8 Grade: Automotive DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
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AT25040B-XPD-T | Microchip Technology |
Description: IC EEPROM 4KBIT SPI 5MHZ 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 5 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Grade: Automotive Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 512 x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
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AT45DB081B-RI-2.5 | Microchip Technology |
Description: IC FLASH 8MBIT SPI 15MHZ 28SOIC Packaging: Tube Package / Case: 28-SOIC (0.342", 8.69mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TC) Voltage - Supply: 2.5V ~ 3.6V Technology: FLASH Clock Frequency: 15 MHz Memory Format: FLASH Supplier Device Package: 28-SOIC Part Status: Obsolete Write Cycle Time - Word, Page: 14ms Memory Interface: SPI Memory Organization: 264 Bytes x 4096 pages DigiKey Programmable: Not Verified |
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APT80GA90S | Microchip Technology |
Description: IGBT PT MOS 8 SINGLE 900 V 80 A Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A Supplier Device Package: D3Pak IGBT Type: PT Td (on/off) @ 25°C: 18ns/149ns Switching Energy: 1.625mJ (on), 1.389mJ (off) Test Condition: 600V, 47A, 4.7Ohm, 15V Gate Charge: 200 nC Part Status: Active Current - Collector (Ic) (Max): 145 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 239 A Power - Max: 625 W |
на замовлення 157 шт: термін постачання 21-31 дні (днів) |
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APT8065BVRG | Microchip Technology |
Description: MOSFET N-CH 800V 13A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247 [B] Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V |
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APT8065BVFRG | Microchip Technology |
Description: MOSFET N-CH 800V 13A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247 [B] Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V |
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APT8065SVRG | Microchip Technology |
Description: MOSFET N-CH 800V 13A D3PAK Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D3Pak Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V |
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APT8056BVRG | Microchip Technology |
Description: MOSFET N-CH 800V 16A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 560mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247 [B] Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V |
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APT8043BLLG | Microchip Technology |
Description: MOSFET N-CH 800V 20A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Part Status: Active Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V |
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APT8043BFLLG | Microchip Technology |
Description: MOSFET N-CH 800V 20A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 430mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V |
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APT8043SFLLG | Microchip Technology |
Description: MOSFET N-CH 800V 20A D3PAK Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 430mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: D3Pak Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V |
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APT8030LVRG | Microchip Technology |
Description: MOSFET N-CH 800V 27A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: TO-264 [L] Part Status: Active Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 510 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V |
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APT8030LVFRG | Microchip Technology |
Description: MOSFET N-CH 800V 27A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: TO-264 [L] Part Status: Active Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 510 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V |
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APT80GP60B2G | Microchip Technology |
Description: IGBT 600V 100A 1041W TMAX Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A Supplier Device Package: T-MAX™ [B2] IGBT Type: PT Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 1041 W |
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APT8030JVFR | Microchip Technology |
Description: MOSFET N-CH 800V 25A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: ISOTOP® Part Status: Active Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 510 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V |
на замовлення 14 шт: термін постачання 21-31 дні (днів) |
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APT80GP60JDQ3 | Microchip Technology |
Description: IGBT 600V 151A 462W SOT227 Packaging: Tube Package / Case: ISOTOP Mounting Type: Chassis Mount Input: Standard Configuration: Single Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A NTC Thermistor: No Supplier Device Package: ISOTOP® IGBT Type: PT Current - Collector (Ic) (Max): 151 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 462 W Current - Collector Cutoff (Max): 1.25 mA Input Capacitance (Cies) @ Vce: 9.84 nF @ 25 V |
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APT8014L2FLLG | Microchip Technology | Description: MOSFET N-CH 800V 52A 264 MAX |
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APT8014L2LLG | Microchip Technology | Description: MOSFET N-CH 800V 52A 264 MAX |
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APT8015JVR | Microchip Technology | Description: MOSFET N-CH 800V 44A ISOTOP |
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APT8015JVFR | Microchip Technology | Description: MOSFET N-CH 800V 44A ISOTOP |
товар відсутній |
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APT8011JLL | Microchip Technology |
Description: MOSFET N-CH 800V 51A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 25.5A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: ISOTOP® Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9480 pF @ 25 V |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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APT8011JFLL | Microchip Technology |
Description: MOSFET N-CH 800V 51A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 25.5A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: ISOTOP® Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9480 pF @ 25 V |
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APT1201R6BVFRG | Microchip Technology | Description: MOSFET N-CH 1200V 8A TO247 |
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47L64-I/SN | Microchip Technology | Description: IC EERAM 64KBIT I2C 1MHZ 8SOIC |
товар відсутній |
MXLSMCJ15CAe3 |
Виробник: Microchip Technology
Description: TVS DIODE 15VWM 24.4VC DO214AB
Description: TVS DIODE 15VWM 24.4VC DO214AB
товар відсутній
MXLSMCJ160CA |
Виробник: Microchip Technology
Description: TVS DIODE 160VWM 259VC DO214AB
Description: TVS DIODE 160VWM 259VC DO214AB
товар відсутній
MXLSMCJ160CAe3 |
Виробник: Microchip Technology
Description: TVS DIODE 160VWM 259VC DO214AB
Description: TVS DIODE 160VWM 259VC DO214AB
товар відсутній
MXLSMLJ26A |
Виробник: Microchip Technology
Description: TVS DIODE 26VWM 42.1VC DO214AB
Description: TVS DIODE 26VWM 42.1VC DO214AB
товар відсутній
MXLSMLJ36AE3 |
Виробник: Microchip Technology
Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 51.6A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 51.6A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
DSC1001CL5-014.3181 |
Виробник: Microchip Technology
Description: MEMS OSC XO 14.3180MHZ CMOS SMD
Description: MEMS OSC XO 14.3180MHZ CMOS SMD
товар відсутній
MCP4532T-502E/MS |
Виробник: Microchip Technology
Description: IC DGTL POT 5KOHM 129TAP 8MSOP
Packaging: Tape & Reel (TR)
Resistance (Ohms): 5k
Tolerance: ±20%
Features: Selectable Address
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: I2C
Configuration: Rheostat
Operating Temperature: -40°C ~ 125°C
Number of Taps: 129
Voltage - Supply: 1.8V ~ 5.5V
Taper: Linear
Supplier Device Package: 8-MSOP
Resistance - Wiper (Ohms) (Typ): 75
Temperature Coefficient (Typ): 150ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC DGTL POT 5KOHM 129TAP 8MSOP
Packaging: Tape & Reel (TR)
Resistance (Ohms): 5k
Tolerance: ±20%
Features: Selectable Address
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: I2C
Configuration: Rheostat
Operating Temperature: -40°C ~ 125°C
Number of Taps: 129
Voltage - Supply: 1.8V ~ 5.5V
Taper: Linear
Supplier Device Package: 8-MSOP
Resistance - Wiper (Ohms) (Typ): 75
Temperature Coefficient (Typ): 150ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 44.35 грн |
PIC32MZ0512EFK064-E/PT |
Виробник: Microchip Technology
Description: IC MCU 32BIT 512KB FLASH 64TQFP
Description: IC MCU 32BIT 512KB FLASH 64TQFP
на замовлення 211 шт:
термін постачання 21-31 дні (днів)ATSAME70J19B-AN |
Виробник: Microchip Technology
Description: IC MCU 32BIT 512KB FLASH 64LQFP
Description: IC MCU 32BIT 512KB FLASH 64LQFP
на замовлення 303 шт:
термін постачання 21-31 дні (днів)SY100EL16VCKG |
Виробник: Microchip Technology
Description: IC RCVR DIFF 3.3/5V 8-MSOP
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Number of Bits: 1
Logic Type: Differential Receiver
Operating Temperature: -40°C ~ 85°C
Supply Voltage: 3.3V, 5V
Supplier Device Package: 8-MSOP
Part Status: Active
Description: IC RCVR DIFF 3.3/5V 8-MSOP
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Number of Bits: 1
Logic Type: Differential Receiver
Operating Temperature: -40°C ~ 85°C
Supply Voltage: 3.3V, 5V
Supplier Device Package: 8-MSOP
Part Status: Active
на замовлення 45 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 277.56 грн |
SY100EL16VSKG-TR |
Виробник: Microchip Technology
Description: IC RCVR DIFF 3.3/5V 8-MSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Number of Bits: 1
Logic Type: Differential Receiver
Operating Temperature: -40°C ~ 85°C
Supply Voltage: 3.3V, 5V
Supplier Device Package: 8-MSOP
Description: IC RCVR DIFF 3.3/5V 8-MSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Number of Bits: 1
Logic Type: Differential Receiver
Operating Temperature: -40°C ~ 85°C
Supply Voltage: 3.3V, 5V
Supplier Device Package: 8-MSOP
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
243+ | 81.7 грн |
MXSMCJ12A |
Виробник: Microchip Technology
Description: TVS DIODE 12VWM 19.9VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 75.3A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 12VWM 19.9VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 75.3A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
MCP1799T-3302H/DB |
Виробник: Microchip Technology
Description: IC REG LINEAR 3.3V 80MA SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 70dB ~ 35dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 1.1V @ 80mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 110 µA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR 3.3V 80MA SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 70dB ~ 35dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 1.1V @ 80mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 110 µA
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
MCP1799T-3302H/DB |
Виробник: Microchip Technology
Description: IC REG LINEAR 3.3V 80MA SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 70dB ~ 35dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 1.1V @ 80mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 110 µA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR 3.3V 80MA SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 70dB ~ 35dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 1.1V @ 80mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 110 µA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1093 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 37.82 грн |
25+ | 30.78 грн |
100+ | 28.26 грн |
MCP1799-3302H/DB |
Виробник: Microchip Technology
Description: IC REG LINEAR 3.3V 80MA SOT223-3
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 70dB ~ 35dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 1.1V @ 80mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 110 µA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR 3.3V 80MA SOT223-3
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 70dB ~ 35dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 1.1V @ 80mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 110 µA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 113 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 37.82 грн |
25+ | 30.78 грн |
100+ | 28.26 грн |
MCP1799T-5002H/TT |
Виробник: Microchip Technology
Description: IC REG LINEAR 5V 80MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 70dB ~ 35dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 1.1V @ 80mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 110 µA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 80MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 70dB ~ 35dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 1.1V @ 80mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 110 µA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 24.38 грн |
MCP1799T-5002H/TT |
Виробник: Microchip Technology
Description: IC REG LINEAR 5V 80MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 70dB ~ 35dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 1.1V @ 80mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 110 µA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 80MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 70dB ~ 35dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 1.1V @ 80mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 110 µA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 5205 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 32.82 грн |
25+ | 26.66 грн |
100+ | 23.48 грн |
ATSAM4S2BA-AUR |
Виробник: Microchip Technology
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I²C, IrDA, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 47
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I²C, IrDA, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 47
DigiKey Programmable: Not Verified
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1500+ | 277.7 грн |
ATSAM4S2BA-AUR |
Виробник: Microchip Technology
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I²C, IrDA, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 47
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I²C, IrDA, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 47
DigiKey Programmable: Not Verified
на замовлення 2857 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 331.07 грн |
25+ | 290.04 грн |
100+ | 267.42 грн |
JANTXV1N6041A |
Виробник: Microchip Technology
Description: TVS DIODE 10VWM 16.7VC DO13
Description: TVS DIODE 10VWM 16.7VC DO13
товар відсутній
JANTXV1N6047A |
Виробник: Microchip Technology
Description: TVS DIODE 18VWM 30.6VC DO13
Description: TVS DIODE 18VWM 30.6VC DO13
товар відсутній
MXLSMCJ30CA |
Виробник: Microchip Technology
Description: TVS DIODE 30VWM 48.4VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 30VWM 48.4VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
AT25040B-MAPD-E |
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT SPI 5MHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 4KBIT SPI 5MHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товар відсутній
AT25040B-MAPD-T |
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT SPI 5MHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 512 x 8
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 4KBIT SPI 5MHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 512 x 8
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товар відсутній
AT25040B-SSPD-T |
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT SPI 5MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 512 x 8
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 4KBIT SPI 5MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 512 x 8
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товар відсутній
AT25040B-XPD-T |
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT SPI 5MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 4KBIT SPI 5MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товар відсутній
AT45DB081B-RI-2.5 |
Виробник: Microchip Technology
Description: IC FLASH 8MBIT SPI 15MHZ 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 2.5V ~ 3.6V
Technology: FLASH
Clock Frequency: 15 MHz
Memory Format: FLASH
Supplier Device Package: 28-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 14ms
Memory Interface: SPI
Memory Organization: 264 Bytes x 4096 pages
DigiKey Programmable: Not Verified
Description: IC FLASH 8MBIT SPI 15MHZ 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 2.5V ~ 3.6V
Technology: FLASH
Clock Frequency: 15 MHz
Memory Format: FLASH
Supplier Device Package: 28-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 14ms
Memory Interface: SPI
Memory Organization: 264 Bytes x 4096 pages
DigiKey Programmable: Not Verified
товар відсутній
APT80GA90S |
Виробник: Microchip Technology
Description: IGBT PT MOS 8 SINGLE 900 V 80 A
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A
Supplier Device Package: D3Pak
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/149ns
Switching Energy: 1.625mJ (on), 1.389mJ (off)
Test Condition: 600V, 47A, 4.7Ohm, 15V
Gate Charge: 200 nC
Part Status: Active
Current - Collector (Ic) (Max): 145 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 239 A
Power - Max: 625 W
Description: IGBT PT MOS 8 SINGLE 900 V 80 A
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A
Supplier Device Package: D3Pak
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/149ns
Switching Energy: 1.625mJ (on), 1.389mJ (off)
Test Condition: 600V, 47A, 4.7Ohm, 15V
Gate Charge: 200 nC
Part Status: Active
Current - Collector (Ic) (Max): 145 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 239 A
Power - Max: 625 W
на замовлення 157 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 777.02 грн |
100+ | 645.22 грн |
APT8065BVRG |
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 13A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Description: MOSFET N-CH 800V 13A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
товар відсутній
APT8065BVFRG |
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 13A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Description: MOSFET N-CH 800V 13A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
товар відсутній
APT8065SVRG |
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 13A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D3Pak
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Description: MOSFET N-CH 800V 13A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D3Pak
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
товар відсутній
APT8056BVRG |
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 16A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V
Description: MOSFET N-CH 800V 16A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V
товар відсутній
APT8043BLLG |
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Description: MOSFET N-CH 800V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
товар відсутній
APT8043BFLLG |
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Description: MOSFET N-CH 800V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
товар відсутній
APT8043SFLLG |
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 20A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: D3Pak
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Description: MOSFET N-CH 800V 20A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: D3Pak
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
товар відсутній
APT8030LVRG |
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 27A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-264 [L]
Part Status: Active
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 510 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
Description: MOSFET N-CH 800V 27A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-264 [L]
Part Status: Active
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 510 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
товар відсутній
APT8030LVFRG |
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 27A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-264 [L]
Part Status: Active
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 510 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
Description: MOSFET N-CH 800V 27A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-264 [L]
Part Status: Active
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 510 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
товар відсутній
APT80GP60B2G |
Виробник: Microchip Technology
Description: IGBT 600V 100A 1041W TMAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
Supplier Device Package: T-MAX™ [B2]
IGBT Type: PT
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1041 W
Description: IGBT 600V 100A 1041W TMAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
Supplier Device Package: T-MAX™ [B2]
IGBT Type: PT
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1041 W
товар відсутній
APT8030JVFR |
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 25A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 510 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
Description: MOSFET N-CH 800V 25A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 510 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
на замовлення 14 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2670.7 грн |
APT80GP60JDQ3 |
Виробник: Microchip Technology
Description: IGBT 600V 151A 462W SOT227
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Current - Collector (Ic) (Max): 151 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 462 W
Current - Collector Cutoff (Max): 1.25 mA
Input Capacitance (Cies) @ Vce: 9.84 nF @ 25 V
Description: IGBT 600V 151A 462W SOT227
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Current - Collector (Ic) (Max): 151 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 462 W
Current - Collector Cutoff (Max): 1.25 mA
Input Capacitance (Cies) @ Vce: 9.84 nF @ 25 V
товар відсутній
APT8014L2FLLG |
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 52A 264 MAX
Description: MOSFET N-CH 800V 52A 264 MAX
товар відсутній
APT8014L2LLG |
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 52A 264 MAX
Description: MOSFET N-CH 800V 52A 264 MAX
товар відсутній
APT8011JLL |
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 51A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 25.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9480 pF @ 25 V
Description: MOSFET N-CH 800V 51A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 25.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9480 pF @ 25 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 6009.97 грн |
APT8011JFLL |
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 51A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 25.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9480 pF @ 25 V
Description: MOSFET N-CH 800V 51A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 25.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9480 pF @ 25 V
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