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Ціна
MX555ABG750M000-TR Microchip Technology MX555ABG750M000.pdf Description: XTAL OSC XO 750.0000MHZ LVDS SMD
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MX555ABG750M000-TR Microchip Technology MX555ABG750M000.pdf Description: XTAL OSC XO 750.0000MHZ LVDS SMD
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MX555ABA15M0000-TR Microchip Technology MX555ABA15M0000.pdf Description: XTAL OSC XO 15.0000MHZ LVPECL
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MX555ABB850M000-TR Microchip Technology MX555ABB850M000.pdf Description: XTAL OSC XO 850.0000MHZ LVDS SMD
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MX555ANM100M000-TR Microchip Technology MX555ANM100M000.pdf Description: XTAL OSC XO 100.0000MHZ LVDS SMD
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MX555ANR200M000-TR Microchip Technology MX555ANR200M000.pdf Description: XTAL OSC XO 200.0000MHZ LVPECL
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MX555ABA15M0000 Microchip Technology MX555ABA15M0000.pdf Description: XTAL OSC XO 15.0000MHZ LVPECL
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APT40GF120JRD APT40GF120JRD Microchip Technology Description: IGBT NPT COMBI 1200V 40A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SOT-227 (ISOTOP®)
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 390 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+3160.89 грн
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JANKCA1N5822 JANKCA1N5822 Microchip Technology Description: DIODE SCHOTTKY 40V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Grade: Military
Qualification: MIL-PRF-19500/620
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1N5822/TR 1N5822/TR Microchip Technology 131997-lds-0303 Description: DIODE SCHOTTKY 40V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
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JANS1N5822US/TR JANS1N5822US/TR Microchip Technology 131998-lds-0303-1.pdf Description: DIODE SCHOTTKY 40V 3A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Grade: Military
Qualification: MIL-PRF-19500/620
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JANTX1N5822/TR JANTX1N5822/TR Microchip Technology 131997-lds-0303 Description: DIODE SCHOTTKY 40V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Grade: Military
Qualification: MIL-PRF-19500/620
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JAN1N5822/TR JAN1N5822/TR Microchip Technology 131997-lds-0303 Description: DIODE SCHOTTKY 40V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Grade: Military
Qualification: MIL-PRF-19500/620
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JANS1N5822/TR JANS1N5822/TR Microchip Technology 131997-lds-0303 Description: DIODE SCHOTTKY 40V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Grade: Military
Qualification: MIL-PRF-19500/620
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JANTXV1N5822US/TR JANTXV1N5822US/TR Microchip Technology 131998-lds-0303-1.pdf Description: DIODE SCHOTTKY 40V 3A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Qualification: MIL-PRF-19500/620
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JANHCA1N5822 JANHCA1N5822 Microchip Technology 131997-lds-0303.pdf Description: DIODE SCHOTTKY 40V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: MIL-PRF-19500/620
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JANTXV1N5822/TR JANTXV1N5822/TR Microchip Technology 131997-lds-0303 Description: DIODE SCHOTTKY 40V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: MIL-PRF-19500/620
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JAN1N5822US/TR JAN1N5822US/TR Microchip Technology 131998-lds-0303-1.pdf Description: DIODE SCHOTTKY 40V 3A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Qualification: MIL-PRF-19500/620
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JANTX1N5532BUR-1/TR JANTX1N5532BUR-1/TR Microchip Technology Description: DIODE ZENER 12V 500MW DO213AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JANTXV1N5532B-1/TR JANTXV1N5532B-1/TR Microchip Technology Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JAN1N5532C-1/TR JAN1N5532C-1/TR Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 12V 500MW DO204AH
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Qualification: MIL-PRF-19500/437
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JANTX1N5532D-1/TR JANTX1N5532D-1/TR Microchip Technology Description: DIODE ZENER 12V 500MW DO204AH
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Qualification: MIL-PRF-19500/437
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JANTX1N5532CUR-1/TR JANTX1N5532CUR-1/TR Microchip Technology Description: DIODE ZENER 12V 500MW DO213AA
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Qualification: MIL-PRF-19500/437
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JANKCA1N5532B JANKCA1N5532B Microchip Technology Description: VOLTAGE REGULATOR
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JAN1N5532D-1/TR JAN1N5532D-1/TR Microchip Technology 1N5518B_1N5546B-1.pdf Description: DIODE ZENER 12V 500MW DO204AH
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Qualification: MIL-PRF-19500/437
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JAN1N5532DUR-1/TR JAN1N5532DUR-1/TR Microchip Technology Description: DIODE ZENER 12V 500MW DO213AA
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Qualification: MIL-PRF-19500/437
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JANTX1N5532B-1/TR JANTX1N5532B-1/TR Microchip Technology Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JANTX1N5532C-1/TR JANTX1N5532C-1/TR Microchip Technology Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JANTXV1N5532DUR-1/TR JANTXV1N5532DUR-1/TR Microchip Technology Description: DIODE ZENER 12V 500MW DO213AA
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JANTXV1N5532CUR-1/TR JANTXV1N5532CUR-1/TR Microchip Technology Description: DIODE ZENER 12V 500MW DO213AA
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JAN1N5532BUR-1/TR JAN1N5532BUR-1/TR Microchip Technology Description: DIODE ZENER 12V 500MW DO213AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JANTXV1N5532C-1/TR JANTXV1N5532C-1/TR Microchip Technology Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JAN1N5532B-1/TR JAN1N5532B-1/TR Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JANHCA1N5532B JANHCA1N5532B Microchip Technology 14809-military-qualified-die-chip Description: DIODE ZENER 12V DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JAN1N5532CUR-1/TR JAN1N5532CUR-1/TR Microchip Technology Description: DIODE ZENER 12V 500MW DO213AA
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JANTXV1N5532D-1/TR JANTXV1N5532D-1/TR Microchip Technology Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JANTX1N5532DUR-1/TR JANTX1N5532DUR-1/TR Microchip Technology Description: DIODE ZENER 12V 500MW DO213AA
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JANTXV1N5532BUR-1/TR JANTXV1N5532BUR-1/TR Microchip Technology Description: DIODE ZENER 12V 500MW DO213AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
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1N4738AURE3/TR 1N4738AURE3/TR Microchip Technology Description: DIODE ZENER 8.2V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
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1N4738AURE3 1N4738AURE3 Microchip Technology Description: DIODE ZENER 8.2V 1W DO213AB
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
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1N4738AG 1N4738AG Microchip Technology 10912-sa5-35-datasheet Description: DIODE ZENER 8.2V 1W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
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1N3070/TR 1N3070/TR Microchip Technology Description: DIODE GEN PURP 175V 100MA DO7
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 100mA
Supplier Device Package: DO-7
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 175 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 175 V
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JANTX1N3070UR-1/TR Microchip Technology Description: SIGNAL/COMPUTER DIODE
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MX1.5KE18A/TR MX1.5KE18A/TR Microchip Technology RF01008_rE.pdf Description: TVS DIODE 15.3VWM 25.2VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 59.5A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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JANTX2N3500 JANTX2N3500 Microchip Technology 125197-lds-0276-datasheet Description: TRANS NPN 150V 0.3A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
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2N3500L 2N3500L Microchip Technology 125198-lds-0276-1-datasheet Description: TRANS NPN 150V 0.3A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
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JAN2N3500 JAN2N3500 Microchip Technology 125197-lds-0276-datasheet Description: TRANS NPN 150V 0.3A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
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JAN2N3500L JAN2N3500L Microchip Technology 125198-lds-0276-1-datasheet Description: TRANS NPN 150V 0.3A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
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JANTX2N3500L JANTX2N3500L Microchip Technology 125198-lds-0276-1-datasheet Description: TRANS NPN 150V 0.3A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
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JANTXV2N3500L JANTXV2N3500L Microchip Technology 125198-lds-0276-1-datasheet Description: TRANS NPN 150V 0.3A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
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BZV55C4V3/TR BZV55C4V3/TR Microchip Technology 8298-bzv55-c2v4-c75-datasheet Description: DIODE ZENER 4.3V DO213AA
Tolerance: ±7%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Supplier Device Package: DO-213AA
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
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DSA612RI2A-01JRTVAO Microchip Technology DSA612-Two-Output-Low-Power-MEMS-Clock-Generator-for-Automotive-DS20006263A.pdf Description: OSC MEMS AUTO -40C-85C SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-VFLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Height: 0.035" (0.89mm)
Ratings: AEC-Q100
Current - Supply (Max): 6mA
Frequency - Output 1: 12MHz
Frequency - Output 2: 24MHz
Part Status: Active
Base Resonator: MEMS
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DSA612RL3A-01Q9TVAO DSA612RL3A-01Q9TVAO Microchip Technology DSA612-Two-Output-Low-Power-MEMS-Clock-Generator-for-Automotive-DS20006263A.pdf Description: OSC MEMS AUTO -40C-105C SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-VFLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±20ppm
Voltage - Supply: 1.71V ~ 3.63V
Height: 0.035" (0.89mm)
Ratings: AEC-Q100
Current - Supply (Max): 6mA
Supplier Device Package: 6-VFLGA (2.5x2)
Frequency - Output 1: 32.768kHz
Frequency - Output 2: 32.768kHz
Part Status: Active
Base Resonator: MEMS
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DSA6121HA3B-01QJTVAO DSA6121HA3B-01QJTVAO Microchip Technology DSA61xx-Ultra-Small-Low-Power-MEMS-Oscillator-for-Automotive-DS20006222A.pdf Description: OSC MEMS AUTO -40C-125C SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±20ppm
Voltage - Supply: 1.71V ~ 3.63V
Height: 0.035" (0.89mm)
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Supplier Device Package: 4-VFLGA (1.6x1.2)
Frequency - Output 1: 8MHz, 64MHz
Part Status: Active
Base Resonator: MEMS
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DSA612RL3A-01QATVAO DSA612RL3A-01QATVAO Microchip Technology DSA612-Two-Output-Low-Power-MEMS-Clock-Generator-for-Automotive-DS20006263A.pdf Description: OSC MEMS AUTO -40C-105C SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-VFLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±20ppm
Voltage - Supply: 1.71V ~ 3.63V
Height: 0.035" (0.89mm)
Ratings: AEC-Q100
Current - Supply (Max): 6mA
Frequency - Output 1: 32.768kHz
Frequency - Output 2: 32.768kHz
Part Status: Active
Base Resonator: MEMS
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DSA612RI2A-01JRVAO DSA612RI2A-01JRVAO Microchip Technology DSA612-Two-Output-Low-Power-MEMS-Clock-Generator-for-Automotive-DS20006263A.pdf Description: OSC MEMS AUTO -40C-85C SMD
Packaging: Tube
Package / Case: 6-VFLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Height: 0.035" (0.89mm)
Ratings: AEC-Q100
Current - Supply (Max): 6mA
Frequency - Output 1: 12MHz
Frequency - Output 2: 24MHz
Part Status: Active
Base Resonator: MEMS
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DSA612RL3A-01Q9VAO DSA612RL3A-01Q9VAO Microchip Technology DSA612-Two-Output-Low-Power-MEMS-Clock-Generator-for-Automotive-DS20006263A.pdf Description: OSC MEMS AUTO -40C-105C SMD
Packaging: Tube
Package / Case: 6-VFLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±20ppm
Voltage - Supply: 1.71V ~ 3.63V
Height: 0.035" (0.89mm)
Ratings: AEC-Q100
Current - Supply (Max): 6mA
Supplier Device Package: 6-VFLGA (2.5x2)
Frequency - Output 1: 32.768kHz
Frequency - Output 2: 32.768kHz
Part Status: Active
Base Resonator: MEMS
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DSA6121HA3B-01QJVAO DSA6121HA3B-01QJVAO Microchip Technology DSA61xx-Ultra-Small-Low-Power-MEMS-Oscillator-for-Automotive-DS20006222A.pdf Description: OSC MEMS AUTO -40C-125C SMD
Packaging: Bag
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±20ppm
Voltage - Supply: 1.71V ~ 3.63V
Height: 0.035" (0.89mm)
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Frequency - Output 1: 8MHz, 64MHz
Part Status: Active
Base Resonator: MEMS
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DSA612RL3A-01QAVAO DSA612RL3A-01QAVAO Microchip Technology DSA612-Two-Output-Low-Power-MEMS-Clock-Generator-for-Automotive-DS20006263A.pdf Description: OSC MEMS AUTO -40C-105C SMD
Packaging: Tube
Package / Case: 6-VFLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±20ppm
Voltage - Supply: 1.71V ~ 3.63V
Height: 0.035" (0.89mm)
Ratings: AEC-Q100
Current - Supply (Max): 6mA
Supplier Device Package: 6-VFLGA (2.5x2)
Frequency - Output 1: 32.768kHz
Frequency - Output 2: 32.768kHz
Part Status: Active
Base Resonator: MEMS
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DSA612PA3A-01R6TVAO DSA612PA3A-01R6TVAO Microchip Technology DSA612-Two-Output-Low-Power-MEMS-Clock-Generator-for-Automotive-DS20006263A.pdf Description: OSC MEMS AUTO -40C-125C SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±20ppm
Voltage - Supply: 1.71V ~ 3.63V
Height: 0.035" (0.89mm)
Ratings: AEC-Q100
Current - Supply (Max): 6mA
Frequency - Output 1: 10MHz
Frequency - Output 2: 32.768kHz
Part Status: Active
Base Resonator: MEMS
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MX555ABG750M000-TR MX555ABG750M000.pdf
Виробник: Microchip Technology
Description: XTAL OSC XO 750.0000MHZ LVDS SMD
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MX555ABG750M000-TR MX555ABG750M000.pdf
Виробник: Microchip Technology
Description: XTAL OSC XO 750.0000MHZ LVDS SMD
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MX555ABA15M0000-TR MX555ABA15M0000.pdf
Виробник: Microchip Technology
Description: XTAL OSC XO 15.0000MHZ LVPECL
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MX555ABB850M000-TR MX555ABB850M000.pdf
Виробник: Microchip Technology
Description: XTAL OSC XO 850.0000MHZ LVDS SMD
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MX555ANM100M000-TR MX555ANM100M000.pdf
Виробник: Microchip Technology
Description: XTAL OSC XO 100.0000MHZ LVDS SMD
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MX555ANR200M000-TR MX555ANR200M000.pdf
Виробник: Microchip Technology
Description: XTAL OSC XO 200.0000MHZ LVPECL
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MX555ABA15M0000 MX555ABA15M0000.pdf
Виробник: Microchip Technology
Description: XTAL OSC XO 15.0000MHZ LVPECL
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APT40GF120JRD
APT40GF120JRD
Виробник: Microchip Technology
Description: IGBT NPT COMBI 1200V 40A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SOT-227 (ISOTOP®)
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 390 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3160.89 грн
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JANKCA1N5822
JANKCA1N5822
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 40V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Grade: Military
Qualification: MIL-PRF-19500/620
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1N5822/TR 131997-lds-0303
1N5822/TR
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 40V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
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JANS1N5822US/TR 131998-lds-0303-1.pdf
JANS1N5822US/TR
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 40V 3A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Grade: Military
Qualification: MIL-PRF-19500/620
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JANTX1N5822/TR 131997-lds-0303
JANTX1N5822/TR
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 40V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Grade: Military
Qualification: MIL-PRF-19500/620
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JAN1N5822/TR 131997-lds-0303
JAN1N5822/TR
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 40V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Grade: Military
Qualification: MIL-PRF-19500/620
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JANS1N5822/TR 131997-lds-0303
JANS1N5822/TR
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 40V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Grade: Military
Qualification: MIL-PRF-19500/620
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JANTXV1N5822US/TR 131998-lds-0303-1.pdf
JANTXV1N5822US/TR
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 40V 3A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Qualification: MIL-PRF-19500/620
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JANHCA1N5822 131997-lds-0303.pdf
JANHCA1N5822
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 40V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: MIL-PRF-19500/620
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JANTXV1N5822/TR 131997-lds-0303
JANTXV1N5822/TR
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 40V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: MIL-PRF-19500/620
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JAN1N5822US/TR 131998-lds-0303-1.pdf
JAN1N5822US/TR
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 40V 3A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Qualification: MIL-PRF-19500/620
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JANTX1N5532BUR-1/TR
JANTX1N5532BUR-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 12V 500MW DO213AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JANTXV1N5532B-1/TR
JANTXV1N5532B-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JAN1N5532C-1/TR 123956-lds-0037-1-datasheet
JAN1N5532C-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 12V 500MW DO204AH
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Qualification: MIL-PRF-19500/437
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JANTX1N5532D-1/TR
JANTX1N5532D-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 12V 500MW DO204AH
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Qualification: MIL-PRF-19500/437
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JANTX1N5532CUR-1/TR
JANTX1N5532CUR-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 12V 500MW DO213AA
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Qualification: MIL-PRF-19500/437
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JANKCA1N5532B
JANKCA1N5532B
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
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JAN1N5532D-1/TR 1N5518B_1N5546B-1.pdf
JAN1N5532D-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 12V 500MW DO204AH
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Qualification: MIL-PRF-19500/437
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JAN1N5532DUR-1/TR
JAN1N5532DUR-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 12V 500MW DO213AA
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Qualification: MIL-PRF-19500/437
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JANTX1N5532B-1/TR
JANTX1N5532B-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JANTX1N5532C-1/TR
JANTX1N5532C-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JANTXV1N5532DUR-1/TR
JANTXV1N5532DUR-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 12V 500MW DO213AA
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JANTXV1N5532CUR-1/TR
JANTXV1N5532CUR-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 12V 500MW DO213AA
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JAN1N5532BUR-1/TR
JAN1N5532BUR-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 12V 500MW DO213AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JANTXV1N5532C-1/TR
JANTXV1N5532C-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JAN1N5532B-1/TR 123956-lds-0037-1-datasheet
JAN1N5532B-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JANHCA1N5532B 14809-military-qualified-die-chip
JANHCA1N5532B
Виробник: Microchip Technology
Description: DIODE ZENER 12V DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JAN1N5532CUR-1/TR
JAN1N5532CUR-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 12V 500MW DO213AA
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JANTXV1N5532D-1/TR
JANTXV1N5532D-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JANTX1N5532DUR-1/TR
JANTX1N5532DUR-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 12V 500MW DO213AA
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JANTXV1N5532BUR-1/TR
JANTXV1N5532BUR-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 12V 500MW DO213AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
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1N4738AURE3/TR
1N4738AURE3/TR
Виробник: Microchip Technology
Description: DIODE ZENER 8.2V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
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1N4738AURE3
1N4738AURE3
Виробник: Microchip Technology
Description: DIODE ZENER 8.2V 1W DO213AB
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
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1N4738AG 10912-sa5-35-datasheet
1N4738AG
Виробник: Microchip Technology
Description: DIODE ZENER 8.2V 1W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
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1N3070/TR
1N3070/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 175V 100MA DO7
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 100mA
Supplier Device Package: DO-7
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 175 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 175 V
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JANTX1N3070UR-1/TR
Виробник: Microchip Technology
Description: SIGNAL/COMPUTER DIODE
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MX1.5KE18A/TR RF01008_rE.pdf
MX1.5KE18A/TR
Виробник: Microchip Technology
Description: TVS DIODE 15.3VWM 25.2VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 59.5A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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JANTX2N3500 125197-lds-0276-datasheet
JANTX2N3500
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
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2N3500L 125198-lds-0276-1-datasheet
2N3500L
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
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JAN2N3500 125197-lds-0276-datasheet
JAN2N3500
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
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JAN2N3500L 125198-lds-0276-1-datasheet
JAN2N3500L
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
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JANTX2N3500L 125198-lds-0276-1-datasheet
JANTX2N3500L
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
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JANTXV2N3500L 125198-lds-0276-1-datasheet
JANTXV2N3500L
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
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BZV55C4V3/TR 8298-bzv55-c2v4-c75-datasheet
BZV55C4V3/TR
Виробник: Microchip Technology
Description: DIODE ZENER 4.3V DO213AA
Tolerance: ±7%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Supplier Device Package: DO-213AA
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
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DSA612RI2A-01JRTVAO DSA612-Two-Output-Low-Power-MEMS-Clock-Generator-for-Automotive-DS20006263A.pdf
Виробник: Microchip Technology
Description: OSC MEMS AUTO -40C-85C SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-VFLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Height: 0.035" (0.89mm)
Ratings: AEC-Q100
Current - Supply (Max): 6mA
Frequency - Output 1: 12MHz
Frequency - Output 2: 24MHz
Part Status: Active
Base Resonator: MEMS
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DSA612RL3A-01Q9TVAO DSA612-Two-Output-Low-Power-MEMS-Clock-Generator-for-Automotive-DS20006263A.pdf
DSA612RL3A-01Q9TVAO
Виробник: Microchip Technology
Description: OSC MEMS AUTO -40C-105C SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-VFLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±20ppm
Voltage - Supply: 1.71V ~ 3.63V
Height: 0.035" (0.89mm)
Ratings: AEC-Q100
Current - Supply (Max): 6mA
Supplier Device Package: 6-VFLGA (2.5x2)
Frequency - Output 1: 32.768kHz
Frequency - Output 2: 32.768kHz
Part Status: Active
Base Resonator: MEMS
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DSA6121HA3B-01QJTVAO DSA61xx-Ultra-Small-Low-Power-MEMS-Oscillator-for-Automotive-DS20006222A.pdf
DSA6121HA3B-01QJTVAO
Виробник: Microchip Technology
Description: OSC MEMS AUTO -40C-125C SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±20ppm
Voltage - Supply: 1.71V ~ 3.63V
Height: 0.035" (0.89mm)
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Supplier Device Package: 4-VFLGA (1.6x1.2)
Frequency - Output 1: 8MHz, 64MHz
Part Status: Active
Base Resonator: MEMS
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DSA612RL3A-01QATVAO DSA612-Two-Output-Low-Power-MEMS-Clock-Generator-for-Automotive-DS20006263A.pdf
DSA612RL3A-01QATVAO
Виробник: Microchip Technology
Description: OSC MEMS AUTO -40C-105C SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-VFLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±20ppm
Voltage - Supply: 1.71V ~ 3.63V
Height: 0.035" (0.89mm)
Ratings: AEC-Q100
Current - Supply (Max): 6mA
Frequency - Output 1: 32.768kHz
Frequency - Output 2: 32.768kHz
Part Status: Active
Base Resonator: MEMS
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DSA612RI2A-01JRVAO DSA612-Two-Output-Low-Power-MEMS-Clock-Generator-for-Automotive-DS20006263A.pdf
DSA612RI2A-01JRVAO
Виробник: Microchip Technology
Description: OSC MEMS AUTO -40C-85C SMD
Packaging: Tube
Package / Case: 6-VFLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Height: 0.035" (0.89mm)
Ratings: AEC-Q100
Current - Supply (Max): 6mA
Frequency - Output 1: 12MHz
Frequency - Output 2: 24MHz
Part Status: Active
Base Resonator: MEMS
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DSA612RL3A-01Q9VAO DSA612-Two-Output-Low-Power-MEMS-Clock-Generator-for-Automotive-DS20006263A.pdf
DSA612RL3A-01Q9VAO
Виробник: Microchip Technology
Description: OSC MEMS AUTO -40C-105C SMD
Packaging: Tube
Package / Case: 6-VFLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±20ppm
Voltage - Supply: 1.71V ~ 3.63V
Height: 0.035" (0.89mm)
Ratings: AEC-Q100
Current - Supply (Max): 6mA
Supplier Device Package: 6-VFLGA (2.5x2)
Frequency - Output 1: 32.768kHz
Frequency - Output 2: 32.768kHz
Part Status: Active
Base Resonator: MEMS
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DSA6121HA3B-01QJVAO DSA61xx-Ultra-Small-Low-Power-MEMS-Oscillator-for-Automotive-DS20006222A.pdf
DSA6121HA3B-01QJVAO
Виробник: Microchip Technology
Description: OSC MEMS AUTO -40C-125C SMD
Packaging: Bag
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±20ppm
Voltage - Supply: 1.71V ~ 3.63V
Height: 0.035" (0.89mm)
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Frequency - Output 1: 8MHz, 64MHz
Part Status: Active
Base Resonator: MEMS
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DSA612RL3A-01QAVAO DSA612-Two-Output-Low-Power-MEMS-Clock-Generator-for-Automotive-DS20006263A.pdf
DSA612RL3A-01QAVAO
Виробник: Microchip Technology
Description: OSC MEMS AUTO -40C-105C SMD
Packaging: Tube
Package / Case: 6-VFLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±20ppm
Voltage - Supply: 1.71V ~ 3.63V
Height: 0.035" (0.89mm)
Ratings: AEC-Q100
Current - Supply (Max): 6mA
Supplier Device Package: 6-VFLGA (2.5x2)
Frequency - Output 1: 32.768kHz
Frequency - Output 2: 32.768kHz
Part Status: Active
Base Resonator: MEMS
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DSA612PA3A-01R6TVAO DSA612-Two-Output-Low-Power-MEMS-Clock-Generator-for-Automotive-DS20006263A.pdf
DSA612PA3A-01R6TVAO
Виробник: Microchip Technology
Description: OSC MEMS AUTO -40C-125C SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±20ppm
Voltage - Supply: 1.71V ~ 3.63V
Height: 0.035" (0.89mm)
Ratings: AEC-Q100
Current - Supply (Max): 6mA
Frequency - Output 1: 10MHz
Frequency - Output 2: 32.768kHz
Part Status: Active
Base Resonator: MEMS
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