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MX1.5KE18A/TR MX1.5KE18A/TR Microchip Technology RF01008_rE.pdf Description: TVS DIODE 15.3VWM 25.2VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 59.5A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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JANTX2N3500 JANTX2N3500 Microchip Technology 125197-lds-0276-datasheet Description: TRANS NPN 150V 0.3A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
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2N3500L 2N3500L Microchip Technology 125198-lds-0276-1-datasheet Description: TRANS NPN 150V 0.3A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
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JAN2N3500 JAN2N3500 Microchip Technology 125197-lds-0276-datasheet Description: TRANS NPN 150V 0.3A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
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JAN2N3500L JAN2N3500L Microchip Technology 125198-lds-0276-1-datasheet Description: TRANS NPN 150V 0.3A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
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JANTX2N3500L JANTX2N3500L Microchip Technology 125198-lds-0276-1-datasheet Description: TRANS NPN 150V 0.3A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
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JANTXV2N3500L JANTXV2N3500L Microchip Technology 125198-lds-0276-1-datasheet Description: TRANS NPN 150V 0.3A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
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BZV55C4V3/TR BZV55C4V3/TR Microchip Technology 8298-bzv55-c2v4-c75-datasheet Description: DIODE ZENER 4.3V DO213AA
Tolerance: ±7%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Supplier Device Package: DO-213AA
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
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DSA612RI2A-01JRTVAO Microchip Technology DSA612-Two-Output-Low-Power-MEMS-Clock-Generator-for-Automotive-DS20006263A.pdf Description: OSC MEMS AUTO -40C-85C SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-VFLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Height: 0.035" (0.89mm)
Ratings: AEC-Q100
Current - Supply (Max): 6mA
Frequency - Output 1: 12MHz
Frequency - Output 2: 24MHz
Part Status: Active
Base Resonator: MEMS
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DSA612RL3A-01Q9TVAO DSA612RL3A-01Q9TVAO Microchip Technology DSA612-Two-Output-Low-Power-MEMS-Clock-Generator-for-Automotive-DS20006263A.pdf Description: OSC MEMS AUTO -40C-105C SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-VFLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±20ppm
Voltage - Supply: 1.71V ~ 3.63V
Height: 0.035" (0.89mm)
Ratings: AEC-Q100
Current - Supply (Max): 6mA
Supplier Device Package: 6-VFLGA (2.5x2)
Frequency - Output 1: 32.768kHz
Frequency - Output 2: 32.768kHz
Part Status: Active
Base Resonator: MEMS
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DSA6121HA3B-01QJTVAO DSA6121HA3B-01QJTVAO Microchip Technology DSA61xx-Ultra-Small-Low-Power-MEMS-Oscillator-for-Automotive-DS20006222A.pdf Description: OSC MEMS AUTO -40C-125C SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±20ppm
Voltage - Supply: 1.71V ~ 3.63V
Height: 0.035" (0.89mm)
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Supplier Device Package: 4-VFLGA (1.6x1.2)
Frequency - Output 1: 8MHz, 64MHz
Part Status: Active
Base Resonator: MEMS
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DSA612RL3A-01QATVAO DSA612RL3A-01QATVAO Microchip Technology DSA612-Two-Output-Low-Power-MEMS-Clock-Generator-for-Automotive-DS20006263A.pdf Description: OSC MEMS AUTO -40C-105C SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-VFLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±20ppm
Voltage - Supply: 1.71V ~ 3.63V
Height: 0.035" (0.89mm)
Ratings: AEC-Q100
Current - Supply (Max): 6mA
Frequency - Output 1: 32.768kHz
Frequency - Output 2: 32.768kHz
Part Status: Active
Base Resonator: MEMS
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DSA612RI2A-01JRVAO DSA612RI2A-01JRVAO Microchip Technology DSA612-Two-Output-Low-Power-MEMS-Clock-Generator-for-Automotive-DS20006263A.pdf Description: OSC MEMS AUTO -40C-85C SMD
Packaging: Tube
Package / Case: 6-VFLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Height: 0.035" (0.89mm)
Ratings: AEC-Q100
Current - Supply (Max): 6mA
Frequency - Output 1: 12MHz
Frequency - Output 2: 24MHz
Part Status: Active
Base Resonator: MEMS
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DSA612RL3A-01Q9VAO DSA612RL3A-01Q9VAO Microchip Technology DSA612-Two-Output-Low-Power-MEMS-Clock-Generator-for-Automotive-DS20006263A.pdf Description: OSC MEMS AUTO -40C-105C SMD
Packaging: Tube
Package / Case: 6-VFLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±20ppm
Voltage - Supply: 1.71V ~ 3.63V
Height: 0.035" (0.89mm)
Ratings: AEC-Q100
Current - Supply (Max): 6mA
Supplier Device Package: 6-VFLGA (2.5x2)
Frequency - Output 1: 32.768kHz
Frequency - Output 2: 32.768kHz
Part Status: Active
Base Resonator: MEMS
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DSA6121HA3B-01QJVAO DSA6121HA3B-01QJVAO Microchip Technology DSA61xx-Ultra-Small-Low-Power-MEMS-Oscillator-for-Automotive-DS20006222A.pdf Description: OSC MEMS AUTO -40C-125C SMD
Packaging: Bag
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±20ppm
Voltage - Supply: 1.71V ~ 3.63V
Height: 0.035" (0.89mm)
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Frequency - Output 1: 8MHz, 64MHz
Part Status: Active
Base Resonator: MEMS
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DSA612RL3A-01QAVAO DSA612RL3A-01QAVAO Microchip Technology DSA612-Two-Output-Low-Power-MEMS-Clock-Generator-for-Automotive-DS20006263A.pdf Description: OSC MEMS AUTO -40C-105C SMD
Packaging: Tube
Package / Case: 6-VFLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±20ppm
Voltage - Supply: 1.71V ~ 3.63V
Height: 0.035" (0.89mm)
Ratings: AEC-Q100
Current - Supply (Max): 6mA
Supplier Device Package: 6-VFLGA (2.5x2)
Frequency - Output 1: 32.768kHz
Frequency - Output 2: 32.768kHz
Part Status: Active
Base Resonator: MEMS
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DSA612PA3A-01R6TVAO DSA612PA3A-01R6TVAO Microchip Technology DSA612-Two-Output-Low-Power-MEMS-Clock-Generator-for-Automotive-DS20006263A.pdf Description: OSC MEMS AUTO -40C-125C SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±20ppm
Voltage - Supply: 1.71V ~ 3.63V
Height: 0.035" (0.89mm)
Ratings: AEC-Q100
Current - Supply (Max): 6mA
Frequency - Output 1: 10MHz
Frequency - Output 2: 32.768kHz
Part Status: Active
Base Resonator: MEMS
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DSA612PA3A-01R6VAO DSA612PA3A-01R6VAO Microchip Technology DSA612-Two-Output-Low-Power-MEMS-Clock-Generator-for-Automotive-DS20006263A.pdf Description: OSC MEMS AUTO -40C-125C SMD
Packaging: Bag
Package / Case: 6-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±20ppm
Voltage - Supply: 1.71V ~ 3.63V
Height: 0.035" (0.89mm)
Ratings: AEC-Q100
Current - Supply (Max): 6mA
Supplier Device Package: 6-VFLGA (1.6x1.2)
Frequency - Output 1: 10MHz
Frequency - Output 2: 32.768kHz
Part Status: Active
Base Resonator: MEMS
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JAN1N4454-1/TR JAN1N4454-1/TR Microchip Technology Description: DIODE GEN PURP 50V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: MIL-PRF-19500/144
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JANTXV1N4454UR-1/TR Microchip Technology Description: DIODE GEN PURP 50V 200MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: MIL-PRF-19500/144
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JAN1N4454UR-1/TR Microchip Technology Description: DIODE GEN PURP 50V 200MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: MIL-PRF-19500/144
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JANTXV1N4454-1/TR JANTXV1N4454-1/TR Microchip Technology Description: DIODE GEN PURP 50V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Qualification: MIL-PRF-19500/144
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1N4454/TR 1N4454/TR Microchip Technology 5813-1n4454-1-datasheet Description: DIODE GEN PURP 75V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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1N4454-1/TR 1N4454-1/TR Microchip Technology 5813-1n4454-1-datasheet Description: DIODE GEN PURP 75V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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JANTX1N4454UR-1/TR Microchip Technology Description: DIODE GEN PURP 50V 200MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: MIL-PRF-19500/144
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JANTX1N4454-1/TR JANTX1N4454-1/TR Microchip Technology Description: DIODE GEN PURP 50V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: MIL-PRF-19500/144
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1N4454UR-1/TR Microchip Technology 1N4454UR-1.pdf Description: DIODE GEN PURP 50V 200MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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DSC1001BC1-080.0000 DSC1001BC1-080.0000 Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: MEMS OSC XO 80.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: 0°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.7V ~ 3.6V
Ratings: AEC-Q100
Current - Supply (Max): 16.6mA
Supplier Device Package: 4-CDFN (5x3.2)
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Active
Frequency: 80 MHz
Base Resonator: MEMS
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VSC6802API Microchip Technology download.php?fid=5114&number=vsc6802 Description: VS6802: API SW&PHY S/W
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VSC6803API Microchip Technology download.php?fid=7718&number=vsc6803 Description: VS6803:OPEN API
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VSC6810SDK Microchip Technology download.php?fid=4755&number=vsc6810 Description: VS6810:CE-SRVCSDK
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VSC6811SDK Microchip Technology download.php?fid=5334&number=vsc6811 Description: VS6811:UM SW SFTW
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VSC6813SDK Microchip Technology download.php?fid=4285&number=vsc6812 Description: VS6813:SMBSTAX SW-ECOS
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VSC6815SDK Microchip Technology download.php?fid=5696&number=vsc6815 Description: VS6815:ISTAX SDK
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VSC6816SDK Microchip Technology download.php?fid=7620&number=vsc6816 Description: VS6816:SMBSTAX SW-LNX
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VSC6817SDK Microchip Technology download.php?fid=7622&number=vsc6817 Description: VS6817:ISTAX LINUX APP S/
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VSC6818SDK Microchip Technology download.php?fid=7621&number=vsc6818 Description: VS6818:CE SERVICES LINUX
Packaging: Bulk
Type: License
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VSC6819SDK Microchip Technology download.php?fid=7620&number=vsc6816 Description: VS6819:WEBSTAX LINUX SDK
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VSC6825SDK Microchip Technology download.php?fid=7865&number=vsc6825 Description: VS6825:UNMANAGED SDK
Packaging: Bulk
Type: License
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VSC6830BSP Microchip Technology VSC6830BSP_Web.pdf Description: VS6830:LINUX BSP
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JANTX1N3041D-1 JANTX1N3041D-1 Microchip Technology 125225-lds-0285-datasheet Description: DIODE ZENER 75V 1W DO41
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JAN1N3041D-1 JAN1N3041D-1 Microchip Technology 125225-lds-0285-datasheet Description: DIODE ZENER 75V 1W DO41
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JANTXV1N3041D-1 Microchip Technology 125225-lds-0285-datasheet Description: DIODE ZENER 75V 1W DO41
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JAN1N3041DUR-1 JAN1N3041DUR-1 Microchip Technology 5787-1n3016bur-datasheet Description: DIODE ZENER 75V 1W DO213AB
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JANTX1N3041DUR-1 JANTX1N3041DUR-1 Microchip Technology 5787-1n3016bur-datasheet Description: DIODE ZENER 75V 1W DO213AB
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JANTXV1N3041DUR-1 JANTXV1N3041DUR-1 Microchip Technology 5787-1n3016bur-datasheet Description: DIODE ZENER 75V 1W DO213AB
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JAN1N3041D-1/TR Microchip Technology Description: VOLTAGE REGULATOR
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JANTXV1N3041DUR-1/TR Microchip Technology Description: VOLTAGE REGULATOR
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JANTX1N3041D-1/TR Microchip Technology Description: VOLTAGE REGULATOR
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JAN1N3041DUR-1/TR Microchip Technology Description: VOLTAGE REGULATOR
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JANTX1N3041DUR-1/TR Microchip Technology Description: VOLTAGE REGULATOR
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JANTXV1N3041D-1/TR Microchip Technology Description: VOLTAGE REGULATOR
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1N5229B/TR 1N5229B/TR Microchip Technology 1N5221%20-%201N5281B.pdf Description: DIODE ZENER 4.3V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5229B-1E3/TR 1N5229B-1E3/TR Microchip Technology Description: DIODE ZENER 4.3V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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JAN1N6136A Microchip Technology 127891-lds-0277-datasheet Description: TVS DIODE 136.8V 245.7V AXIAL
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JANTX1N6136A Microchip Technology 127891-lds-0277-datasheet Description: TVS DIODE 136.8V 245.7V AXIAL
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JAN1N6136AUS Microchip Technology 127892-lds-0277-1-datasheet Description: TVS DIODE 136.8V 245.7V SQ-MELF
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JANTXV1N6136A Microchip Technology 127891-lds-0277-datasheet Description: TVS DIODE 136.8V 245.7V AXIAL
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JANTXV1N6136AUS JANTXV1N6136AUS Microchip Technology 127892-lds-0277-1-datasheet Description: TVS DIODE 136.8VWM 245.7VC MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 136.8V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 245.7V
Power - Peak Pulse: 500W
Power Line Protection: No
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JANTX1N6136AUS JANTX1N6136AUS Microchip Technology 127892-lds-0277-1-datasheet Description: TVS DIODE 136.8V 245.7V SQ-MELF
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MX1.5KE18A/TR RF01008_rE.pdf
MX1.5KE18A/TR
Виробник: Microchip Technology
Description: TVS DIODE 15.3VWM 25.2VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 59.5A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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JANTX2N3500 125197-lds-0276-datasheet
JANTX2N3500
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
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2N3500L 125198-lds-0276-1-datasheet
2N3500L
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
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JAN2N3500 125197-lds-0276-datasheet
JAN2N3500
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
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JAN2N3500L 125198-lds-0276-1-datasheet
JAN2N3500L
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
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JANTX2N3500L 125198-lds-0276-1-datasheet
JANTX2N3500L
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
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JANTXV2N3500L 125198-lds-0276-1-datasheet
JANTXV2N3500L
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
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BZV55C4V3/TR 8298-bzv55-c2v4-c75-datasheet
BZV55C4V3/TR
Виробник: Microchip Technology
Description: DIODE ZENER 4.3V DO213AA
Tolerance: ±7%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Supplier Device Package: DO-213AA
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
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DSA612RI2A-01JRTVAO DSA612-Two-Output-Low-Power-MEMS-Clock-Generator-for-Automotive-DS20006263A.pdf
Виробник: Microchip Technology
Description: OSC MEMS AUTO -40C-85C SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-VFLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Height: 0.035" (0.89mm)
Ratings: AEC-Q100
Current - Supply (Max): 6mA
Frequency - Output 1: 12MHz
Frequency - Output 2: 24MHz
Part Status: Active
Base Resonator: MEMS
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DSA612RL3A-01Q9TVAO DSA612-Two-Output-Low-Power-MEMS-Clock-Generator-for-Automotive-DS20006263A.pdf
DSA612RL3A-01Q9TVAO
Виробник: Microchip Technology
Description: OSC MEMS AUTO -40C-105C SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-VFLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±20ppm
Voltage - Supply: 1.71V ~ 3.63V
Height: 0.035" (0.89mm)
Ratings: AEC-Q100
Current - Supply (Max): 6mA
Supplier Device Package: 6-VFLGA (2.5x2)
Frequency - Output 1: 32.768kHz
Frequency - Output 2: 32.768kHz
Part Status: Active
Base Resonator: MEMS
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DSA6121HA3B-01QJTVAO DSA61xx-Ultra-Small-Low-Power-MEMS-Oscillator-for-Automotive-DS20006222A.pdf
DSA6121HA3B-01QJTVAO
Виробник: Microchip Technology
Description: OSC MEMS AUTO -40C-125C SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±20ppm
Voltage - Supply: 1.71V ~ 3.63V
Height: 0.035" (0.89mm)
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Supplier Device Package: 4-VFLGA (1.6x1.2)
Frequency - Output 1: 8MHz, 64MHz
Part Status: Active
Base Resonator: MEMS
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DSA612RL3A-01QATVAO DSA612-Two-Output-Low-Power-MEMS-Clock-Generator-for-Automotive-DS20006263A.pdf
DSA612RL3A-01QATVAO
Виробник: Microchip Technology
Description: OSC MEMS AUTO -40C-105C SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-VFLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±20ppm
Voltage - Supply: 1.71V ~ 3.63V
Height: 0.035" (0.89mm)
Ratings: AEC-Q100
Current - Supply (Max): 6mA
Frequency - Output 1: 32.768kHz
Frequency - Output 2: 32.768kHz
Part Status: Active
Base Resonator: MEMS
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DSA612RI2A-01JRVAO DSA612-Two-Output-Low-Power-MEMS-Clock-Generator-for-Automotive-DS20006263A.pdf
DSA612RI2A-01JRVAO
Виробник: Microchip Technology
Description: OSC MEMS AUTO -40C-85C SMD
Packaging: Tube
Package / Case: 6-VFLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Height: 0.035" (0.89mm)
Ratings: AEC-Q100
Current - Supply (Max): 6mA
Frequency - Output 1: 12MHz
Frequency - Output 2: 24MHz
Part Status: Active
Base Resonator: MEMS
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DSA612RL3A-01Q9VAO DSA612-Two-Output-Low-Power-MEMS-Clock-Generator-for-Automotive-DS20006263A.pdf
DSA612RL3A-01Q9VAO
Виробник: Microchip Technology
Description: OSC MEMS AUTO -40C-105C SMD
Packaging: Tube
Package / Case: 6-VFLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±20ppm
Voltage - Supply: 1.71V ~ 3.63V
Height: 0.035" (0.89mm)
Ratings: AEC-Q100
Current - Supply (Max): 6mA
Supplier Device Package: 6-VFLGA (2.5x2)
Frequency - Output 1: 32.768kHz
Frequency - Output 2: 32.768kHz
Part Status: Active
Base Resonator: MEMS
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DSA6121HA3B-01QJVAO DSA61xx-Ultra-Small-Low-Power-MEMS-Oscillator-for-Automotive-DS20006222A.pdf
DSA6121HA3B-01QJVAO
Виробник: Microchip Technology
Description: OSC MEMS AUTO -40C-125C SMD
Packaging: Bag
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±20ppm
Voltage - Supply: 1.71V ~ 3.63V
Height: 0.035" (0.89mm)
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Frequency - Output 1: 8MHz, 64MHz
Part Status: Active
Base Resonator: MEMS
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DSA612RL3A-01QAVAO DSA612-Two-Output-Low-Power-MEMS-Clock-Generator-for-Automotive-DS20006263A.pdf
DSA612RL3A-01QAVAO
Виробник: Microchip Technology
Description: OSC MEMS AUTO -40C-105C SMD
Packaging: Tube
Package / Case: 6-VFLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±20ppm
Voltage - Supply: 1.71V ~ 3.63V
Height: 0.035" (0.89mm)
Ratings: AEC-Q100
Current - Supply (Max): 6mA
Supplier Device Package: 6-VFLGA (2.5x2)
Frequency - Output 1: 32.768kHz
Frequency - Output 2: 32.768kHz
Part Status: Active
Base Resonator: MEMS
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DSA612PA3A-01R6TVAO DSA612-Two-Output-Low-Power-MEMS-Clock-Generator-for-Automotive-DS20006263A.pdf
DSA612PA3A-01R6TVAO
Виробник: Microchip Technology
Description: OSC MEMS AUTO -40C-125C SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±20ppm
Voltage - Supply: 1.71V ~ 3.63V
Height: 0.035" (0.89mm)
Ratings: AEC-Q100
Current - Supply (Max): 6mA
Frequency - Output 1: 10MHz
Frequency - Output 2: 32.768kHz
Part Status: Active
Base Resonator: MEMS
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DSA612PA3A-01R6VAO DSA612-Two-Output-Low-Power-MEMS-Clock-Generator-for-Automotive-DS20006263A.pdf
DSA612PA3A-01R6VAO
Виробник: Microchip Technology
Description: OSC MEMS AUTO -40C-125C SMD
Packaging: Bag
Package / Case: 6-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±20ppm
Voltage - Supply: 1.71V ~ 3.63V
Height: 0.035" (0.89mm)
Ratings: AEC-Q100
Current - Supply (Max): 6mA
Supplier Device Package: 6-VFLGA (1.6x1.2)
Frequency - Output 1: 10MHz
Frequency - Output 2: 32.768kHz
Part Status: Active
Base Resonator: MEMS
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JAN1N4454-1/TR
JAN1N4454-1/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: MIL-PRF-19500/144
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JANTXV1N4454UR-1/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 200MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: MIL-PRF-19500/144
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JAN1N4454UR-1/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 200MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: MIL-PRF-19500/144
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JANTXV1N4454-1/TR
JANTXV1N4454-1/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Qualification: MIL-PRF-19500/144
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1N4454/TR 5813-1n4454-1-datasheet
1N4454/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 75V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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1N4454-1/TR 5813-1n4454-1-datasheet
1N4454-1/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 75V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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JANTX1N4454UR-1/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 200MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: MIL-PRF-19500/144
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JANTX1N4454-1/TR
JANTX1N4454-1/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: MIL-PRF-19500/144
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1N4454UR-1/TR 1N4454UR-1.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 200MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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DSC1001BC1-080.0000 DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
DSC1001BC1-080.0000
Виробник: Microchip Technology
Description: MEMS OSC XO 80.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: 0°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.7V ~ 3.6V
Ratings: AEC-Q100
Current - Supply (Max): 16.6mA
Supplier Device Package: 4-CDFN (5x3.2)
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Active
Frequency: 80 MHz
Base Resonator: MEMS
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VSC6802API download.php?fid=5114&number=vsc6802
Виробник: Microchip Technology
Description: VS6802: API SW&PHY S/W
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VSC6803API download.php?fid=7718&number=vsc6803
Виробник: Microchip Technology
Description: VS6803:OPEN API
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VSC6810SDK download.php?fid=4755&number=vsc6810
Виробник: Microchip Technology
Description: VS6810:CE-SRVCSDK
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VSC6811SDK download.php?fid=5334&number=vsc6811
Виробник: Microchip Technology
Description: VS6811:UM SW SFTW
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VSC6813SDK download.php?fid=4285&number=vsc6812
Виробник: Microchip Technology
Description: VS6813:SMBSTAX SW-ECOS
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VSC6815SDK download.php?fid=5696&number=vsc6815
Виробник: Microchip Technology
Description: VS6815:ISTAX SDK
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VSC6816SDK download.php?fid=7620&number=vsc6816
Виробник: Microchip Technology
Description: VS6816:SMBSTAX SW-LNX
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VSC6817SDK download.php?fid=7622&number=vsc6817
Виробник: Microchip Technology
Description: VS6817:ISTAX LINUX APP S/
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VSC6818SDK download.php?fid=7621&number=vsc6818
Виробник: Microchip Technology
Description: VS6818:CE SERVICES LINUX
Packaging: Bulk
Type: License
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VSC6819SDK download.php?fid=7620&number=vsc6816
Виробник: Microchip Technology
Description: VS6819:WEBSTAX LINUX SDK
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VSC6825SDK download.php?fid=7865&number=vsc6825
Виробник: Microchip Technology
Description: VS6825:UNMANAGED SDK
Packaging: Bulk
Type: License
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VSC6830BSP VSC6830BSP_Web.pdf
Виробник: Microchip Technology
Description: VS6830:LINUX BSP
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JANTX1N3041D-1 125225-lds-0285-datasheet
JANTX1N3041D-1
Виробник: Microchip Technology
Description: DIODE ZENER 75V 1W DO41
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JAN1N3041D-1 125225-lds-0285-datasheet
JAN1N3041D-1
Виробник: Microchip Technology
Description: DIODE ZENER 75V 1W DO41
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JANTXV1N3041D-1 125225-lds-0285-datasheet
Виробник: Microchip Technology
Description: DIODE ZENER 75V 1W DO41
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JAN1N3041DUR-1 5787-1n3016bur-datasheet
JAN1N3041DUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 75V 1W DO213AB
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JANTX1N3041DUR-1 5787-1n3016bur-datasheet
JANTX1N3041DUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 75V 1W DO213AB
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JANTXV1N3041DUR-1 5787-1n3016bur-datasheet
JANTXV1N3041DUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 75V 1W DO213AB
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JAN1N3041D-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
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JANTXV1N3041DUR-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
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JANTX1N3041D-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
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JAN1N3041DUR-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
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JANTX1N3041DUR-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
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JANTXV1N3041D-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
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1N5229B/TR 1N5221%20-%201N5281B.pdf
1N5229B/TR
Виробник: Microchip Technology
Description: DIODE ZENER 4.3V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5229B-1E3/TR
1N5229B-1E3/TR
Виробник: Microchip Technology
Description: DIODE ZENER 4.3V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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JAN1N6136A 127891-lds-0277-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 136.8V 245.7V AXIAL
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JANTX1N6136A 127891-lds-0277-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 136.8V 245.7V AXIAL
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JAN1N6136AUS 127892-lds-0277-1-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 136.8V 245.7V SQ-MELF
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JANTXV1N6136A 127891-lds-0277-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 136.8V 245.7V AXIAL
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JANTXV1N6136AUS 127892-lds-0277-1-datasheet
JANTXV1N6136AUS
Виробник: Microchip Technology
Description: TVS DIODE 136.8VWM 245.7VC MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 136.8V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 245.7V
Power - Peak Pulse: 500W
Power Line Protection: No
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JANTX1N6136AUS 127892-lds-0277-1-datasheet
JANTX1N6136AUS
Виробник: Microchip Technology
Description: TVS DIODE 136.8V 245.7V SQ-MELF
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