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JAN1N5533B-1/TR JAN1N5533B-1/TR Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 13V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 11.7 V
Qualification: MIL-PRF-19500/437
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JAN1N5537B-1/TR JAN1N5537B-1/TR Microchip Technology 123956-lds-0037-1-datasheet Description: VOLTAGE REGULATOR
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JAN1N5535B-1/TR Microchip Technology 123956-lds-0037-1-datasheet Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 13.5 V
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JAN1N5530B-1/TR JAN1N5530B-1/TR Microchip Technology 123956-lds-0037-1-datasheet Description: VOLTAGE REGULATOR
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JAN1N5538B-1/TR JAN1N5538B-1/TR Microchip Technology 123956-lds-0037-1-datasheet Description: VOLTAGE REGULATOR
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JAN1N5534B-1/TR JAN1N5534B-1/TR Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 14V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.6 V
Qualification: MIL-PRF-19500/437
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JAN1N5539B-1/TR JAN1N5539B-1/TR Microchip Technology 123956-lds-0037-1-datasheet Description: VOLTAGE REGULATOR
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JAN1N5531B-1/TR JAN1N5531B-1/TR Microchip Technology 123956-lds-0037-1-datasheet Description: VOLTAGE REGULATOR
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2N2906AUB/TR 2N2906AUB/TR Microchip Technology Description: TRANS PNP 60V 0.6A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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JAN2N2906AUB/TR JAN2N2906AUB/TR Microchip Technology Description: TRANS PNP 60V 0.6A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANTXV2N2906AUB/TR JANTXV2N2906AUB/TR Microchip Technology Description: TRANS PNP 60V 0.6A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANTX2N2906AUB/TR JANTX2N2906AUB/TR Microchip Technology Description: TRANS PNP 60V 0.6A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANHCB2N2906A JANHCB2N2906A Microchip Technology 14809-military-qualified-die-chip Description: TRANS PNP 60V 0.6A TO18
Packaging: Tape & Reel (TR)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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2N2906AUA/TR 2N2906AUA/TR Microchip Technology Description: TRANS PNP 60V 0.6A 4SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 10V
Supplier Device Package: 4-SMD
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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JAN2N2906AUA/TR JAN2N2906AUA/TR Microchip Technology Description: TRANS PNP 60V 0.6A 4SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: 4-SMD
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANTX2N2906AUA/TR JANTX2N2906AUA/TR Microchip Technology Description: TRANS PNP 60V 0.6A 4SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: 4-SMD
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANTXV2N2906AUA/TR JANTXV2N2906AUA/TR Microchip Technology Description: TRANS PNP 60V 0.6A 4SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: 4-SMD
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANKCB2N2906A JANKCB2N2906A Microchip Technology Description: TRANS PNP 60V 0.6A TO18
Packaging: Tape & Reel (TR)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANSR2N2906A JANSR2N2906A Microchip Technology Description: TRANS PNP 60V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANSR2N2906AL JANSR2N2906AL Microchip Technology Description: TRANS PNP 60V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANSR2N2906AUB/TR JANSR2N2906AUB/TR Microchip Technology Description: TRANS PNP 60V 0.6A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANSM2N2906AUB/TR JANSM2N2906AUB/TR Microchip Technology Description: TRANS PNP 60V 0.6A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANSL2N2906AUB/TR JANSL2N2906AUB/TR Microchip Technology Description: TRANS PNP 60V 0.6A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANSP2N2906AUB/TR JANSP2N2906AUB/TR Microchip Technology Description: TRANS PNP 60V 0.6A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANSD2N2906AUB/TR JANSD2N2906AUB/TR Microchip Technology Description: TRANS PNP 60V 0.6A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANSP2N2906AUA/TR JANSP2N2906AUA/TR Microchip Technology Description: TRANS PNP 60V 0.6A UA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANSM2N2906AUA/TR JANSM2N2906AUA/TR Microchip Technology Description: TRANS PNP 60V 0.6A UA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANSD2N2906AUA/TR JANSD2N2906AUA/TR Microchip Technology Description: TRANS PNP 60V 0.6A UA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANSL2N2906AUA/TR JANSL2N2906AUA/TR Microchip Technology Description: TRANS PNP 60V 0.6A UA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANSR2N2906AUA/TR JANSR2N2906AUA/TR Microchip Technology Description: TRANS PNP 60V 0.6A UA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANS2N2906AUBC/TR Microchip Technology Description: TRANS PNP 60V 0.6A UBC
Packaging: Tape & Reel (TR)
Package / Case: 3-CLCC
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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JANSR2N2906AUB JANSR2N2906AUB Microchip Technology Description: TRANS PNP 60V 0.6A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANS2N2906A JANS2N2906A Microchip Technology MIL-PRF-19500_291Y_wAmendment1_7-10-19.pdf Description: TRANS PNP 60V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANS2N2906AL JANS2N2906AL Microchip Technology MIL-PRF-19500_291Y_wAmendment1_7-10-19.pdf Description: TRANS PNP 60V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANS2N2906AUA Microchip Technology MIL-PRF-19500_291Y_wAmendment1_7-10-19.pdf Description: TRANS PNP 60V 0.6A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANS2N2906AUB JANS2N2906AUB Microchip Technology MIL-PRF-19500_291Y_wAmendment1_7-10-19.pdf Description: TRANS PNP 60V 0.6A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANS2N2906AUBC Microchip Technology MIL-PRF-19500_291Y_wAmendment1_7-10-19.pdf Description: TRANS PNP 60V 0.6A UBC
Packaging: Bulk
Package / Case: 3-CLCC
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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JANKCBR2N2906A JANKCBR2N2906A Microchip Technology Description: TRANS PNP 60V 0.6A TO18
Packaging: Tape & Reel (TR)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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AT24C04N-10SU-2.7 AT24C04N-10SU-2.7 Microchip Technology doc0180.pdf Description: IC EEPROM 4KBIT I2C 400KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
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MIC803-30D4VM3-TR MIC803-30D4VM3-TR Microchip Technology MIC803-3-Pin-Microprocessor-Supervisor-Circuit-with-Open-Drain-Reset-Output-DS20006456A.pdf Description: IC SUPERVISOR 1 CHANNEL SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 1.12s Minimum
Voltage - Threshold: 3V
Supplier Device Package: SOT-23-3
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1402 шт:
термін постачання 21-31 дні (днів)
10+32.20 грн
25+25.02 грн
100+23.60 грн
Мінімальне замовлення: 10
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PD-IM-7604-4T4H PD-IM-7604-4T4H Microchip Technology Microsemi_PD_IM_7604_4M_T4H_User_Guide_V2_PD000354473.pdf Description: EVAL BOARD FOR PD69200 PD69204T4
Packaging: Bulk
Function: Power Over Ethernet (PoE)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: PD69200, PD69204T4, PD69208T4
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+25949.40 грн
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PD-IM-7618T4H PD-IM-7618T4H Microchip Technology Microchip_User_Guide_PD_IM_7618T4_H_PD000395299.pdf Description: 8 X 4-PAIR PORTS PSE EVB PD69208
Packaging: Bulk
Function: Power Over Ethernet (PoE)
Type: Power Management
Utilized IC / Part: PD7618T4
Supplied Contents: Board(s)
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+25965.50 грн
В кошику  од. на суму  грн.
EV14Y36A EV14Y36A Microchip Technology Description: PD69210 POE EVAL BOARD
Packaging: Bulk
Function: Power Over Ethernet (PoE)
Type: Power Management
Utilized IC / Part: PD69210, PD69208T4
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+25965.50 грн
В кошику  од. на суму  грн.
PD-IM-7618T4 PD-IM-7618T4 Microchip Technology Microchip_User_Guide_PD_IM_7618T4_H_PD000395299.pdf Description: 8 X 2-PAIR PORTS PSE EVB PD69208
Packaging: Bulk
Function: Power Over Ethernet (PoE)
Type: Power Management
Utilized IC / Part: PD7618T4
Supplied Contents: Board(s)
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+24576.14 грн
В кошику  од. на суму  грн.
PD-IM-7604-4MH Microchip Technology Microsemi_PD_IM_7604_4M_T4H_User_Guide_V2_PD000354473.pdf Description: PD69208M EVAL BOARD IEEE802.3AT
Packaging: Bulk
Function: Power Over Ethernet (PoE)
Type: Power Management
Utilized IC / Part: PD69200, PD69208M
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Part Status: Active
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DSC1253BE1-156M2500 DSC1253BE1-156M2500 Microchip Technology DSC12x2-3-4-High-Performance-Differential-MEMS-Oscillators-DS20006011.pdf Description: MEMS OSC XO 156.2500MHZ LVDS SMD
Packaging: Strip
Package / Case: 6-VDFN
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA (Typ)
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Active
Frequency: 156.25 MHz
Base Resonator: MEMS
Supplier Device Package: 6-CDFN (5x3.2)
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DSC1253BL2-148M3500 DSC1253BL2-148M3500 Microchip Technology DSC12x2-3-4-High-Performance-Differential-MEMS-Oscillators-DS20006011.pdf Description: MEMS OSC XO 148.3500MHZ LVDS SMD
Packaging: Strip
Package / Case: 6-VDFN
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA (Typ)
Supplier Device Package: 6-CDFN (5x3.2)
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Active
Frequency: 148.35 MHz
Base Resonator: MEMS
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ATSAML11E15A-MUT ATSAML11E15A-MUT Microchip Technology SAM-L10L11-Family-DataSheet-DS60001513F.pdf Description: IC MCU 32BIT 32KB FLASH 32VQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M23
Data Converters: A/D 10x12b; D/A 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.63V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 32-VQFN (5x5)
Number of I/O: 25
DigiKey Programmable: Not Verified
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PIC32MZ1025DAR169T-I/6J PIC32MZ1025DAR169T-I/6J Microchip Technology PIC32MZ-DA-Family-DataSheet-DS60001565C.pdf Description: IC MCU 32BIT 1MB FLASH 169LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 169-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8 + 32MB DDR2 SDRAM
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 1.9V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Supplier Device Package: 169-LFBGA (11x11)
Number of I/O: 120
DigiKey Programmable: Not Verified
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PIC32MZ1025DAR169T-I/6J PIC32MZ1025DAR169T-I/6J Microchip Technology PIC32MZ-DA-Family-DataSheet-DS60001565C.pdf Description: IC MCU 32BIT 1MB FLASH 169LFBGA
Packaging: Cut Tape (CT)
Package / Case: 169-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8 + 32MB DDR2 SDRAM
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 1.9V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Supplier Device Package: 169-LFBGA (11x11)
Number of I/O: 120
DigiKey Programmable: Not Verified
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PIC32MZ1025DAR169-I/6J PIC32MZ1025DAR169-I/6J Microchip Technology PIC32MZ-DA-Family-DataSheet-DS60001565C.pdf Description: IC MCU 32BIT 1MB FLASH 169LFBGA
Packaging: Tray
Package / Case: 169-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8 + 32MB DDR2 SDRAM
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 1.9V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Supplier Device Package: 169-LFBGA (11x11)
Number of I/O: 120
DigiKey Programmable: Not Verified
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PIC32MZ2025DAR169-I/6J PIC32MZ2025DAR169-I/6J Microchip Technology PIC32MZ-DA-Family-DataSheet-DS60001565C.pdf Description: IC MCU 32BIT 2MB FLASH 169LFBGA
на замовлення 327 шт:
термін постачання 21-31 дні (днів)
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ATSAMS70Q21B-CN ATSAMS70Q21B-CN Microchip Technology SAM-E70-S70-V70-V71-Family-Data-Sheet-DS60001527.pdf Description: IC MCU 32BIT 2MB FLASH 144LFBGA
Packaging: Tray
Package / Case: 144-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M7
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.08V ~ 3.6V
Connectivity: EBI/EMI, I2C, IrDA, LINbus, MMC/SD/SDIO, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 144-LFBGA (10x10)
Number of I/O: 114
DigiKey Programmable: Not Verified
на замовлення 770 шт:
термін постачання 21-31 дні (днів)
1+1341.06 грн
25+1173.85 грн
100+1063.85 грн
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JANTXV1N2990B Microchip Technology 8914-lds-0075-datasheet Description: DIODE ZENER 33V 10W DO213AA
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USB3326C-GL-TR USB3326C-GL-TR Microchip Technology 00001902A.pdf Description: IC TRANSCEIVER HALF 1/1 25WLCSP
Packaging: Cut Tape (CT)
Package / Case: 25-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.6V ~ 2V, 3V ~ 3.6V
Number of Drivers/Receivers: 1/1
Protocol: USB
Supplier Device Package: 25-WLCSP (1.97x1.97)
Receiver Hysteresis: 150 mV
Duplex: Half
на замовлення 5370 шт:
термін постачання 21-31 дні (днів)
2+183.53 грн
25+146.07 грн
100+132.80 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
USB3322C-GL-TR USB3322C-GL-TR Microchip Technology 00001902A.pdf Description: IC TRANSCEIVER HALF 1/1 25WLCSP
Packaging: Cut Tape (CT)
Package / Case: 25-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Number of Drivers/Receivers: 1/1
Protocol: USB
Supplier Device Package: 25-WLCSP (1.97x1.97)
Receiver Hysteresis: 150 mV
Duplex: Half
на замовлення 3070 шт:
термін постачання 21-31 дні (днів)
2+184.34 грн
25+146.32 грн
100+133.02 грн
Мінімальне замовлення: 2
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ATSAM4S2CB-CNR ATSAM4S2CB-CNR Microchip Technology Atmel-11100-32-bit%20Cortex-M4-Microcontroller-SAM4S_Datasheet.pdf Description: IC MCU 32BIT 128KB FLSH 100TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-TFBGA
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: EBI/EMI, I2C, IrDA, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 100-TFBGA (9x9)
Number of I/O: 79
DigiKey Programmable: Not Verified
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+280.16 грн
Мінімальне замовлення: 2000
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ATSAM4S2CB-CNR ATSAM4S2CB-CNR Microchip Technology Atmel-11100-32-bit%20Cortex-M4-Microcontroller-SAM4S_Datasheet.pdf Description: IC MCU 32BIT 128KB FLSH 100TFBGA
Packaging: Cut Tape (CT)
Package / Case: 100-TFBGA
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: EBI/EMI, I2C, IrDA, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 100-TFBGA (9x9)
Number of I/O: 79
DigiKey Programmable: Not Verified
на замовлення 2078 шт:
термін постачання 21-31 дні (днів)
1+338.08 грн
25+296.26 грн
100+269.79 грн
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ATSAM4S8CB-CNR ATSAM4S8CB-CNR Microchip Technology Atmel-11100-32-bit%20Cortex-M4-Microcontroller-SAM4S_Datasheet.pdf Description: IC MCU 32BIT 512KB FLSH 100TFBGA
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2N6318 2N6318 Microchip Technology Description: PNP SILICON POWER TRANSISTOR
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JAN1N5533B-1/TR 123956-lds-0037-1-datasheet
JAN1N5533B-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 13V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 11.7 V
Qualification: MIL-PRF-19500/437
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JAN1N5537B-1/TR 123956-lds-0037-1-datasheet
JAN1N5537B-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
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JAN1N5535B-1/TR 123956-lds-0037-1-datasheet
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 13.5 V
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JAN1N5530B-1/TR 123956-lds-0037-1-datasheet
JAN1N5530B-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
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JAN1N5538B-1/TR 123956-lds-0037-1-datasheet
JAN1N5538B-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
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JAN1N5534B-1/TR 123956-lds-0037-1-datasheet
JAN1N5534B-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 14V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.6 V
Qualification: MIL-PRF-19500/437
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JAN1N5539B-1/TR 123956-lds-0037-1-datasheet
JAN1N5539B-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
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JAN1N5531B-1/TR 123956-lds-0037-1-datasheet
JAN1N5531B-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
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2N2906AUB/TR
2N2906AUB/TR
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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JAN2N2906AUB/TR
JAN2N2906AUB/TR
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANTXV2N2906AUB/TR
JANTXV2N2906AUB/TR
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANTX2N2906AUB/TR
JANTX2N2906AUB/TR
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANHCB2N2906A 14809-military-qualified-die-chip
JANHCB2N2906A
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A TO18
Packaging: Tape & Reel (TR)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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2N2906AUA/TR
2N2906AUA/TR
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A 4SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 10V
Supplier Device Package: 4-SMD
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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JAN2N2906AUA/TR
JAN2N2906AUA/TR
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A 4SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: 4-SMD
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANTX2N2906AUA/TR
JANTX2N2906AUA/TR
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A 4SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: 4-SMD
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANTXV2N2906AUA/TR
JANTXV2N2906AUA/TR
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A 4SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: 4-SMD
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANKCB2N2906A
JANKCB2N2906A
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A TO18
Packaging: Tape & Reel (TR)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANSR2N2906A
JANSR2N2906A
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANSR2N2906AL
JANSR2N2906AL
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANSR2N2906AUB/TR
JANSR2N2906AUB/TR
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANSM2N2906AUB/TR
JANSM2N2906AUB/TR
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANSL2N2906AUB/TR
JANSL2N2906AUB/TR
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANSP2N2906AUB/TR
JANSP2N2906AUB/TR
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANSD2N2906AUB/TR
JANSD2N2906AUB/TR
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANSP2N2906AUA/TR
JANSP2N2906AUA/TR
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANSM2N2906AUA/TR
JANSM2N2906AUA/TR
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANSD2N2906AUA/TR
JANSD2N2906AUA/TR
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANSL2N2906AUA/TR
JANSL2N2906AUA/TR
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANSR2N2906AUA/TR
JANSR2N2906AUA/TR
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANS2N2906AUBC/TR
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UBC
Packaging: Tape & Reel (TR)
Package / Case: 3-CLCC
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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JANSR2N2906AUB
JANSR2N2906AUB
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANS2N2906A MIL-PRF-19500_291Y_wAmendment1_7-10-19.pdf
JANS2N2906A
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANS2N2906AL MIL-PRF-19500_291Y_wAmendment1_7-10-19.pdf
JANS2N2906AL
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANS2N2906AUA MIL-PRF-19500_291Y_wAmendment1_7-10-19.pdf
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANS2N2906AUB MIL-PRF-19500_291Y_wAmendment1_7-10-19.pdf
JANS2N2906AUB
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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JANS2N2906AUBC MIL-PRF-19500_291Y_wAmendment1_7-10-19.pdf
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UBC
Packaging: Bulk
Package / Case: 3-CLCC
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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JANKCBR2N2906A
JANKCBR2N2906A
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A TO18
Packaging: Tape & Reel (TR)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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AT24C04N-10SU-2.7 doc0180.pdf
AT24C04N-10SU-2.7
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT I2C 400KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
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MIC803-30D4VM3-TR MIC803-3-Pin-Microprocessor-Supervisor-Circuit-with-Open-Drain-Reset-Output-DS20006456A.pdf
MIC803-30D4VM3-TR
Виробник: Microchip Technology
Description: IC SUPERVISOR 1 CHANNEL SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 1.12s Minimum
Voltage - Threshold: 3V
Supplier Device Package: SOT-23-3
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1402 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+32.20 грн
25+25.02 грн
100+23.60 грн
Мінімальне замовлення: 10
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PD-IM-7604-4T4H Microsemi_PD_IM_7604_4M_T4H_User_Guide_V2_PD000354473.pdf
PD-IM-7604-4T4H
Виробник: Microchip Technology
Description: EVAL BOARD FOR PD69200 PD69204T4
Packaging: Bulk
Function: Power Over Ethernet (PoE)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: PD69200, PD69204T4, PD69208T4
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+25949.40 грн
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PD-IM-7618T4H Microchip_User_Guide_PD_IM_7618T4_H_PD000395299.pdf
PD-IM-7618T4H
Виробник: Microchip Technology
Description: 8 X 4-PAIR PORTS PSE EVB PD69208
Packaging: Bulk
Function: Power Over Ethernet (PoE)
Type: Power Management
Utilized IC / Part: PD7618T4
Supplied Contents: Board(s)
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+25965.50 грн
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EV14Y36A
EV14Y36A
Виробник: Microchip Technology
Description: PD69210 POE EVAL BOARD
Packaging: Bulk
Function: Power Over Ethernet (PoE)
Type: Power Management
Utilized IC / Part: PD69210, PD69208T4
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+25965.50 грн
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PD-IM-7618T4 Microchip_User_Guide_PD_IM_7618T4_H_PD000395299.pdf
PD-IM-7618T4
Виробник: Microchip Technology
Description: 8 X 2-PAIR PORTS PSE EVB PD69208
Packaging: Bulk
Function: Power Over Ethernet (PoE)
Type: Power Management
Utilized IC / Part: PD7618T4
Supplied Contents: Board(s)
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+24576.14 грн
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PD-IM-7604-4MH Microsemi_PD_IM_7604_4M_T4H_User_Guide_V2_PD000354473.pdf
Виробник: Microchip Technology
Description: PD69208M EVAL BOARD IEEE802.3AT
Packaging: Bulk
Function: Power Over Ethernet (PoE)
Type: Power Management
Utilized IC / Part: PD69200, PD69208M
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Part Status: Active
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DSC1253BE1-156M2500 DSC12x2-3-4-High-Performance-Differential-MEMS-Oscillators-DS20006011.pdf
DSC1253BE1-156M2500
Виробник: Microchip Technology
Description: MEMS OSC XO 156.2500MHZ LVDS SMD
Packaging: Strip
Package / Case: 6-VDFN
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA (Typ)
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Active
Frequency: 156.25 MHz
Base Resonator: MEMS
Supplier Device Package: 6-CDFN (5x3.2)
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DSC1253BL2-148M3500 DSC12x2-3-4-High-Performance-Differential-MEMS-Oscillators-DS20006011.pdf
DSC1253BL2-148M3500
Виробник: Microchip Technology
Description: MEMS OSC XO 148.3500MHZ LVDS SMD
Packaging: Strip
Package / Case: 6-VDFN
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA (Typ)
Supplier Device Package: 6-CDFN (5x3.2)
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Active
Frequency: 148.35 MHz
Base Resonator: MEMS
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ATSAML11E15A-MUT SAM-L10L11-Family-DataSheet-DS60001513F.pdf
ATSAML11E15A-MUT
Виробник: Microchip Technology
Description: IC MCU 32BIT 32KB FLASH 32VQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M23
Data Converters: A/D 10x12b; D/A 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.63V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 32-VQFN (5x5)
Number of I/O: 25
DigiKey Programmable: Not Verified
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PIC32MZ1025DAR169T-I/6J PIC32MZ-DA-Family-DataSheet-DS60001565C.pdf
PIC32MZ1025DAR169T-I/6J
Виробник: Microchip Technology
Description: IC MCU 32BIT 1MB FLASH 169LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 169-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8 + 32MB DDR2 SDRAM
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 1.9V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Supplier Device Package: 169-LFBGA (11x11)
Number of I/O: 120
DigiKey Programmable: Not Verified
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PIC32MZ1025DAR169T-I/6J PIC32MZ-DA-Family-DataSheet-DS60001565C.pdf
PIC32MZ1025DAR169T-I/6J
Виробник: Microchip Technology
Description: IC MCU 32BIT 1MB FLASH 169LFBGA
Packaging: Cut Tape (CT)
Package / Case: 169-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8 + 32MB DDR2 SDRAM
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 1.9V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Supplier Device Package: 169-LFBGA (11x11)
Number of I/O: 120
DigiKey Programmable: Not Verified
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PIC32MZ1025DAR169-I/6J PIC32MZ-DA-Family-DataSheet-DS60001565C.pdf
PIC32MZ1025DAR169-I/6J
Виробник: Microchip Technology
Description: IC MCU 32BIT 1MB FLASH 169LFBGA
Packaging: Tray
Package / Case: 169-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8 + 32MB DDR2 SDRAM
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 1.9V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Supplier Device Package: 169-LFBGA (11x11)
Number of I/O: 120
DigiKey Programmable: Not Verified
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PIC32MZ2025DAR169-I/6J PIC32MZ-DA-Family-DataSheet-DS60001565C.pdf
PIC32MZ2025DAR169-I/6J
Виробник: Microchip Technology
Description: IC MCU 32BIT 2MB FLASH 169LFBGA
на замовлення 327 шт:
термін постачання 21-31 дні (днів)
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ATSAMS70Q21B-CN SAM-E70-S70-V70-V71-Family-Data-Sheet-DS60001527.pdf
ATSAMS70Q21B-CN
Виробник: Microchip Technology
Description: IC MCU 32BIT 2MB FLASH 144LFBGA
Packaging: Tray
Package / Case: 144-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M7
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.08V ~ 3.6V
Connectivity: EBI/EMI, I2C, IrDA, LINbus, MMC/SD/SDIO, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 144-LFBGA (10x10)
Number of I/O: 114
DigiKey Programmable: Not Verified
на замовлення 770 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1341.06 грн
25+1173.85 грн
100+1063.85 грн
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JANTXV1N2990B 8914-lds-0075-datasheet
Виробник: Microchip Technology
Description: DIODE ZENER 33V 10W DO213AA
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USB3326C-GL-TR 00001902A.pdf
USB3326C-GL-TR
Виробник: Microchip Technology
Description: IC TRANSCEIVER HALF 1/1 25WLCSP
Packaging: Cut Tape (CT)
Package / Case: 25-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.6V ~ 2V, 3V ~ 3.6V
Number of Drivers/Receivers: 1/1
Protocol: USB
Supplier Device Package: 25-WLCSP (1.97x1.97)
Receiver Hysteresis: 150 mV
Duplex: Half
на замовлення 5370 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+183.53 грн
25+146.07 грн
100+132.80 грн
Мінімальне замовлення: 2
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USB3322C-GL-TR 00001902A.pdf
USB3322C-GL-TR
Виробник: Microchip Technology
Description: IC TRANSCEIVER HALF 1/1 25WLCSP
Packaging: Cut Tape (CT)
Package / Case: 25-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Number of Drivers/Receivers: 1/1
Protocol: USB
Supplier Device Package: 25-WLCSP (1.97x1.97)
Receiver Hysteresis: 150 mV
Duplex: Half
на замовлення 3070 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+184.34 грн
25+146.32 грн
100+133.02 грн
Мінімальне замовлення: 2
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ATSAM4S2CB-CNR Atmel-11100-32-bit%20Cortex-M4-Microcontroller-SAM4S_Datasheet.pdf
ATSAM4S2CB-CNR
Виробник: Microchip Technology
Description: IC MCU 32BIT 128KB FLSH 100TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-TFBGA
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: EBI/EMI, I2C, IrDA, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 100-TFBGA (9x9)
Number of I/O: 79
DigiKey Programmable: Not Verified
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+280.16 грн
Мінімальне замовлення: 2000
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ATSAM4S2CB-CNR Atmel-11100-32-bit%20Cortex-M4-Microcontroller-SAM4S_Datasheet.pdf
ATSAM4S2CB-CNR
Виробник: Microchip Technology
Description: IC MCU 32BIT 128KB FLSH 100TFBGA
Packaging: Cut Tape (CT)
Package / Case: 100-TFBGA
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: EBI/EMI, I2C, IrDA, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 100-TFBGA (9x9)
Number of I/O: 79
DigiKey Programmable: Not Verified
на замовлення 2078 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+338.08 грн
25+296.26 грн
100+269.79 грн
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ATSAM4S8CB-CNR Atmel-11100-32-bit%20Cortex-M4-Microcontroller-SAM4S_Datasheet.pdf
ATSAM4S8CB-CNR
Виробник: Microchip Technology
Description: IC MCU 32BIT 512KB FLSH 100TFBGA
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2N6318
2N6318
Виробник: Microchip Technology
Description: PNP SILICON POWER TRANSISTOR
товару немає в наявності
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