Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (342123) > Сторінка 1463 з 5703
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MSC090SMA070B | Microchip Technology |
Description: SICFET N-CH 700V TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Supplier Device Package: TO-247-3 Part Status: Active Drain to Source Voltage (Vdss): 700 V |
на замовлення 127 шт: термін постачання 21-31 дні (днів) |
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MSC050SDA070BCT | Microchip Technology |
Description: DIODE SIL CARB 700V 88A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 2034pF @ 1V, 1MHz Current - Average Rectified (Io): 88A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A Current - Reverse Leakage @ Vr: 200 µA @ 700 V |
на замовлення 38 шт: термін постачання 21-31 дні (днів) |
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MSC030SDA070BCT | Microchip Technology |
Description: SIC SBD 700 V 30 A TO-247 |
на замовлення 29 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||
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MSC050SDA070S | Microchip Technology |
Description: DIODE SIL CARBIDE 700V 88A D3PAKPackaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 2034pF @ 1V, 1MHz Current - Average Rectified (Io): 88A Supplier Device Package: D3Pak Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A Current - Reverse Leakage @ Vr: 200 µA @ 700 V |
на замовлення 58 шт: термін постачання 21-31 дні (днів) |
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MSC030SDA070K | Microchip Technology |
Description: DIODE SIL CARB 700V 30A TO220-2Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Current - Average Rectified (Io): 30A Supplier Device Package: TO-220-2 Part Status: Active Voltage - DC Reverse (Vr) (Max): 700 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A |
на замовлення 119 шт: термін постачання 21-31 дні (днів) |
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MSC030SDA070S | Microchip Technology |
Description: DIODE SIL CARBIDE 700V 60A D3PAKPackaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Current - Average Rectified (Io): 60A Supplier Device Package: D3Pak Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A Current - Reverse Leakage @ Vr: 200 µA @ 700 V |
на замовлення 108 шт: термін постачання 21-31 дні (днів) |
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MSC035SMA070S | Microchip Technology |
Description: MOSFET N-CH 700V D3PAKPackaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V Power Dissipation (Max): 206W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 1mA Supplier Device Package: D3Pak Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 700 V |
на замовлення 60 шт: термін постачання 21-31 дні (днів) |
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MSC035SMA070B | Microchip Technology |
Description: MOSFET N-CH 700V TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V Power Dissipation (Max): 283W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 2mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 700 V |
на замовлення 110 шт: термін постачання 21-31 дні (днів) |
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MSC030SDA070B | Microchip Technology |
Description: DIODE SIL CARBIDE 700V 60A TO247Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1200pF @ 1V, 1MHz Current - Average Rectified (Io): 60A Supplier Device Package: TO-247 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A Current - Reverse Leakage @ Vr: 200 µA @ 700 V |
на замовлення 96 шт: термін постачання 21-31 дні (днів) |
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MSC080SMA120B4 | Microchip Technology |
Description: SICFET N-CH 1200V 37A TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: TO-247-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V |
на замовлення 94 шт: термін постачання 21-31 дні (днів) |
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JANTX1N4989US | Microchip Technology |
Description: DIODE ZENER 200V 5W D5BTolerance: ±5% Packaging: Bulk Package / Case: SQ-MELF, E Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 200 V Impedance (Max) (Zzt): 500 Ohms Supplier Device Package: D-5B Grade: Military Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 152 V Qualification: MIL-PRF-19500/356 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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PIC32MK1024MCF064T-I/MR | Microchip Technology |
Description: IC MCU 32BIT 1MB FLASH 64QFNPackaging: Tape & Reel (TR) Package / Case: 64-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 120MHz Program Memory Size: 1MB (1M x 8) RAM Size: 256K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: MIPS32® microAptiv™ Data Converters: A/D 27x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V Connectivity: Brown-out Detect/Reset, DMA, I2S, POR, Motor Control PWM, WDT Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, Motor Control PWM, WDT Supplier Device Package: 64-QFN (9x9) Part Status: Active Number of I/O: 49 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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PIC32MK1024MCF064T-I/MR | Microchip Technology |
Description: IC MCU 32BIT 1MB FLASH 64QFNPackaging: Cut Tape (CT) Package / Case: 64-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 120MHz Program Memory Size: 1MB (1M x 8) RAM Size: 256K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: MIPS32® microAptiv™ Data Converters: A/D 27x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V Connectivity: Brown-out Detect/Reset, DMA, I2S, POR, Motor Control PWM, WDT Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, Motor Control PWM, WDT Supplier Device Package: 64-QFN (9x9) Part Status: Active Number of I/O: 49 DigiKey Programmable: Not Verified |
на замовлення 3890 шт: термін постачання 21-31 дні (днів) |
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93C76CT-E/SN15KVAO | Microchip Technology |
Description: IC EEPROM 8KBIT MICROWIRE 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 8Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Clock Frequency: 3 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 2ms Memory Interface: Microwire Memory Organization: 1K x 8, 512 x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| 93C76C-I/W15K | Microchip Technology |
Description: IC EEPROM 8KBIT SPI 3MHZ DIE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| 93C76C-I/S15K | Microchip Technology |
Description: IC EEPROM 8KBIT SPI 3MHZ DIE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| 93C76C/WF15K | Microchip Technology |
Description: IC EEPROM 8KBIT SPI 3MHZ DIE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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MIC2564A-1BSM | Microchip Technology |
Description: DUAL SERIAL PCMCIA/CARDBUS POWERFeatures: Status Flag Packaging: Bulk Package / Case: 24-SSOP (0.209", 5.30mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 4 Interface: Serial Switch Type: PCMCIA Switch Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 1.3Ohm Input Type: Non-Inverting Voltage - Load: 3.3V, 5V, 12V Current - Output (Max): 120mA Ratio - Input:Output: 3:4 Supplier Device Package: 24-SSOP Fault Protection: Current Limiting (Fixed), Over Temperature |
на замовлення 11005 шт: термін постачання 21-31 дні (днів) |
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MIC2564A-0BSM | Microchip Technology |
Description: DUAL SERIAL PCMCIA/CARDBUS POWERFeatures: Status Flag Packaging: Bulk Package / Case: 24-SSOP (0.209", 5.30mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 4 Interface: Serial Switch Type: PCMCIA Switch Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 1.3Ohm Input Type: Non-Inverting Voltage - Load: 3.3V, 5V, 12V Current - Output (Max): 120mA Ratio - Input:Output: 3:4 Supplier Device Package: 24-SSOP Fault Protection: Current Limiting (Fixed), Over Temperature |
на замовлення 3474 шт: термін постачання 21-31 дні (днів) |
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85HQ035 | Microchip Technology |
Description: DIODE SCHOTTKY 35V 80A DO5Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 80A Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 740 mV @ 80 A Current - Reverse Leakage @ Vr: 2 mA @ 35 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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51HQ035 | Microchip Technology |
Description: DIODE SCHOTTKY 35V 60A DO5Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 60A Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 60 A Current - Reverse Leakage @ Vr: 2 mA @ 35 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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75HQ035 | Microchip Technology |
Description: DIODE SCHOTTKY 35V 80A DO203ABPackaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 80A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 740 mV @ 80 A Current - Reverse Leakage @ Vr: 2 mA @ 35 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| GC2532-150A/TR | Microchip Technology | Description: SI SRD NON HERMETIC EPSM SMT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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VCC1-B3E-12M3500000TR | Microchip Technology | Description: OSCILLATOR CMOS SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| VCC1-B3E-12M3500000 | Microchip Technology |
Description: OSCILLATOR CMOS SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| MXLPLAD15KP33A | Microchip Technology |
Description: TVS DIODE 33VWM 53.3VC PLAD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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MX15KP33Ae3 | Microchip Technology |
Description: TVS DIODE 33VWM 54.8VC CASE 5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MX5KP33A/TR | Microchip Technology |
Description: TVS DIODE 33VWM 53.3VC CASE 5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MX5KP33Ae3 | Microchip Technology |
Description: TVS DIODE 33VWM 53.3VC CASE 5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| MXLPLAD15KP33Ae3 | Microchip Technology |
Description: TVS DIODE 33VWM 53.3VC PLAD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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MX5KP33A | Microchip Technology |
Description: TVS DIODE 33VWM 53.3VC CASE 5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANTX2N6989U/TR | Microchip Technology |
Description: TRANSISTOR QUAD SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 20-CLCC Mounting Type: Surface Mount Transistor Type: 4 NPN (Quad) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 1W Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: 20-CLCC Grade: Military Qualification: MIL-PRF-19500/559 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| JANTX2N6989U | Microchip Technology |
Description: TRANS 4NPN 50V 0.8A 20CLCCPackaging: Bulk Package / Case: 20-CLCC Mounting Type: Surface Mount Transistor Type: 4 NPN (Quad) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 1W Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: 20-CLCC Grade: Military Qualification: MIL-PRF-19500/559 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| Jantxv2N6989U | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Transistor Type: 4 PNP (Quad) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 1W Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: 6-SMD Grade: Military Qualification: MIL-PRF-19500/559 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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JANTXV2N6989U/TR | Microchip Technology |
Description: TRANSISTOR QUAD SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Transistor Type: 4 PNP (Quad) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 1W Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: 6-SMD Grade: Military Qualification: MIL-PRF-19500/559 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JAN2N6989U/TR | Microchip Technology |
Description: TRANSISTOR QUAD SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Transistor Type: 4 PNP (Quad) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 1W Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: 6-SMD Grade: Military Qualification: MIL-PRF-19500/559 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| Jan2N6989U | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Transistor Type: 4 PNP (Quad) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 1W Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: 6-SMD Grade: Military Qualification: MIL-PRF-19500/559 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| JANS2N6989U | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Transistor Type: 4 PNP (Quad) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 1W Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: 6-SMD Grade: Military Qualification: MIL-PRF-19500/559 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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JANS2N6989U/TR | Microchip Technology |
Description: TRANSISTOR QUAD SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Transistor Type: 4 PNP (Quad) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 1W Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: 6-SMD Grade: Military Qualification: MIL-PRF-19500/559 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| 2N6989U/TR | Microchip Technology |
Description: TRANSISTOR QUAD SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 20-CLCC Mounting Type: Surface Mount Transistor Type: 4 NPN (Quad) Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: 20-CLCC Grade: Military Qualification: MIL-PRF-19500/559 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| JANTX1N2827B | Microchip Technology |
Description: ZENER DIODE Packaging: Bulk Tolerance: ±5% Package / Case: TO-204AD Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 43 V Impedance (Max) (Zzt): 4.5 Ohms Supplier Device Package: TO-204AD (TO-3) Power - Max: 10 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 32.7 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| JANTX1N2827RB | Microchip Technology |
Description: ZENER DIODE Packaging: Bulk Tolerance: ±5% Package / Case: TO-204AD Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 43 V Impedance (Max) (Zzt): 4.5 Ohms Supplier Device Package: TO-204AD (TO-3) Power - Max: 10 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 32.7 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| JANTXV1N2827B | Microchip Technology |
Description: ZENER DIODE Packaging: Bulk Tolerance: ±5% Package / Case: TO-204AD Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 43 V Impedance (Max) (Zzt): 4.5 Ohms Supplier Device Package: TO-204AD (TO-3) Power - Max: 10 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 32.7 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| JANTXV1N2827RB | Microchip Technology |
Description: ZENER DIODE Packaging: Bulk Tolerance: ±5% Package / Case: TO-204AD Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 43 V Impedance (Max) (Zzt): 4.5 Ohms Supplier Device Package: TO-204AD (TO-3) Power - Max: 10 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 32.7 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| JAN1N2827RB | Microchip Technology |
Description: ZENER DIODE Packaging: Bulk Tolerance: ±5% Package / Case: TO-204AD Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 43 V Impedance (Max) (Zzt): 4.5 Ohms Supplier Device Package: TO-204AD (TO-3) Power - Max: 10 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 32.7 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
|
AT24CSW010-STUM-T | Microchip Technology |
Description: IC EEPROM 1KBIT I2C TSOT23-5Packaging: Tape & Reel (TR) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Memory Size: 1Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TC) Voltage - Supply: 1.7V ~ 3.6V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: TSOT-23-5 Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 450 ns Memory Organization: 128 x 8 DigiKey Programmable: Not Verified |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
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AT24CSW010-STUM-T | Microchip Technology |
Description: IC EEPROM 1KBIT I2C TSOT23-5Packaging: Cut Tape (CT) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Memory Size: 1Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TC) Voltage - Supply: 1.7V ~ 3.6V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: TSOT-23-5 Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 450 ns Memory Organization: 128 x 8 DigiKey Programmable: Not Verified |
на замовлення 5561 шт: термін постачання 21-31 дні (днів) |
|
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|
AT24CSW040-STUM-T | Microchip Technology |
Description: IC EEPROM 4KBIT I2C TSOT23-5Packaging: Tape & Reel (TR) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TC) Voltage - Supply: 1.7V ~ 3.6V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: TSOT-23-5 Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 450 ns Memory Organization: 512 x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
AT24CSW040-STUM-T | Microchip Technology |
Description: IC EEPROM 4KBIT I2C TSOT23-5Packaging: Cut Tape (CT) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TC) Voltage - Supply: 1.7V ~ 3.6V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: TSOT-23-5 Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 450 ns Memory Organization: 512 x 8 DigiKey Programmable: Not Verified |
на замовлення 8565 шт: термін постачання 21-31 дні (днів) |
|
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|
AT24CSW080-STUM-T | Microchip Technology |
Description: IC EEPROM 8KBIT I2C TSOT23-5Packaging: Tape & Reel (TR) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Memory Size: 8Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TC) Voltage - Supply: 1.7V ~ 3.6V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: TSOT-23-5 Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 450 ns Memory Organization: 1K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
AT24CSW080-STUM-T | Microchip Technology |
Description: IC EEPROM 8KBIT I2C TSOT23-5Packaging: Cut Tape (CT) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Memory Size: 8Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TC) Voltage - Supply: 1.7V ~ 3.6V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: TSOT-23-5 Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 450 ns Memory Organization: 1K x 8 DigiKey Programmable: Not Verified |
на замовлення 6387 шт: термін постачання 21-31 дні (днів) |
|
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|
AT24CSW020-STUM-T | Microchip Technology |
Description: IC EEPROM 2KBIT I2C TSOT23-5Packaging: Tape & Reel (TR) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Memory Size: 2Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TC) Voltage - Supply: 1.7V ~ 3.6V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: TSOT-23-5 Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 450 ns Memory Organization: 256 x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
AT24CSW020-STUM-T | Microchip Technology |
Description: IC EEPROM 2KBIT I2C TSOT23-5Packaging: Cut Tape (CT) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Memory Size: 2Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TC) Voltage - Supply: 1.7V ~ 3.6V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: TSOT-23-5 Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 450 ns Memory Organization: 256 x 8 DigiKey Programmable: Not Verified |
на замовлення 6691 шт: термін постачання 21-31 дні (днів) |
|
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|
AT24C01A-10TI-2.7-T | Microchip Technology |
Description: IC EEPROM 1KBIT I2C 8TSSOPPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 1Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Part Status: Obsolete Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 128 x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
AT24C01A-10SI-2.7-T | Microchip Technology |
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 1Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Obsolete Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 128 x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
AT24C01AY1-10YU-1.8-T | Microchip Technology |
Description: IC EEPROM 1KBIT I2C 400KHZ 8MAPPackaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-MAP (3x4.9) Part Status: Obsolete Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 128 x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
AT24C01A-10SI-1.8-T | Microchip Technology |
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 1Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Obsolete Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 128 x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
AT24C01A-10PC | Microchip Technology |
Description: IC EEPROM 1KBIT I2C 400KHZ 8DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Size: 1Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-PDIP Part Status: Obsolete Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 128 x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
AT24C01A-10TSU-1.8-T | Microchip Technology |
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 1Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Obsolete Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 128 x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
AT24C01A-10SU-1.8-T | Microchip Technology |
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 1Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 128 x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. |
| MSC090SMA070B |
![]() |
Виробник: Microchip Technology
Description: SICFET N-CH 700V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Supplier Device Package: TO-247-3
Part Status: Active
Drain to Source Voltage (Vdss): 700 V
Description: SICFET N-CH 700V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Supplier Device Package: TO-247-3
Part Status: Active
Drain to Source Voltage (Vdss): 700 V
на замовлення 127 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 418.74 грн |
| 25+ | 372.16 грн |
| MSC050SDA070BCT |
![]() |
Виробник: Microchip Technology
Description: DIODE SIL CARB 700V 88A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2034pF @ 1V, 1MHz
Current - Average Rectified (Io): 88A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 200 µA @ 700 V
Description: DIODE SIL CARB 700V 88A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2034pF @ 1V, 1MHz
Current - Average Rectified (Io): 88A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 200 µA @ 700 V
на замовлення 38 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1682.48 грн |
| 25+ | 1493.87 грн |
| MSC030SDA070BCT |
![]() |
Виробник: Microchip Technology
Description: SIC SBD 700 V 30 A TO-247
Description: SIC SBD 700 V 30 A TO-247
на замовлення 29 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| MSC050SDA070S |
![]() |
Виробник: Microchip Technology
Description: DIODE SIL CARBIDE 700V 88A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2034pF @ 1V, 1MHz
Current - Average Rectified (Io): 88A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 200 µA @ 700 V
Description: DIODE SIL CARBIDE 700V 88A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2034pF @ 1V, 1MHz
Current - Average Rectified (Io): 88A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 200 µA @ 700 V
на замовлення 58 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 956.17 грн |
| 25+ | 849.41 грн |
| MSC030SDA070K |
![]() |
Виробник: Microchip Technology
Description: DIODE SIL CARB 700V 30A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Description: DIODE SIL CARB 700V 30A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
на замовлення 119 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 532.41 грн |
| 25+ | 472.32 грн |
| 100+ | 425.84 грн |
| MSC030SDA070S |
![]() |
Виробник: Microchip Technology
Description: DIODE SIL CARBIDE 700V 60A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 700 V
Description: DIODE SIL CARBIDE 700V 60A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 700 V
на замовлення 108 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 634.38 грн |
| 25+ | 564.49 грн |
| 100+ | 473.83 грн |
| MSC035SMA070S |
![]() |
Виробник: Microchip Technology
Description: MOSFET N-CH 700V D3PAK
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V
Power Dissipation (Max): 206W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 700 V
Description: MOSFET N-CH 700V D3PAK
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V
Power Dissipation (Max): 206W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 700 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1264.58 грн |
| 25+ | 1122.13 грн |
| MSC035SMA070B |
![]() |
Виробник: Microchip Technology
Description: MOSFET N-CH 700V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V
Power Dissipation (Max): 283W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 2mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 700 V
Description: MOSFET N-CH 700V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V
Power Dissipation (Max): 283W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 2mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 700 V
на замовлення 110 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 838.32 грн |
| 25+ | 744.62 грн |
| MSC030SDA070B |
![]() |
Виробник: Microchip Technology
Description: DIODE SIL CARBIDE 700V 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1200pF @ 1V, 1MHz
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 700 V
Description: DIODE SIL CARBIDE 700V 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1200pF @ 1V, 1MHz
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 700 V
на замовлення 96 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 561.66 грн |
| 25+ | 498.20 грн |
| MSC080SMA120B4 |
![]() |
Виробник: Microchip Technology
Description: SICFET N-CH 1200V 37A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V
Description: SICFET N-CH 1200V 37A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V
на замовлення 94 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 734.68 грн |
| 25+ | 652.67 грн |
| JANTX1N4989US |
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Виробник: Microchip Technology
Description: DIODE ZENER 200V 5W D5B
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 500 Ohms
Supplier Device Package: D-5B
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 152 V
Qualification: MIL-PRF-19500/356
Description: DIODE ZENER 200V 5W D5B
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 500 Ohms
Supplier Device Package: D-5B
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 152 V
Qualification: MIL-PRF-19500/356
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| PIC32MK1024MCF064T-I/MR |
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Виробник: Microchip Technology
Description: IC MCU 32BIT 1MB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 27x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V
Connectivity: Brown-out Detect/Reset, DMA, I2S, POR, Motor Control PWM, WDT
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, Motor Control PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 49
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1MB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 27x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V
Connectivity: Brown-out Detect/Reset, DMA, I2S, POR, Motor Control PWM, WDT
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, Motor Control PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 49
DigiKey Programmable: Not Verified
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| PIC32MK1024MCF064T-I/MR |
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Виробник: Microchip Technology
Description: IC MCU 32BIT 1MB FLASH 64QFN
Packaging: Cut Tape (CT)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 27x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V
Connectivity: Brown-out Detect/Reset, DMA, I2S, POR, Motor Control PWM, WDT
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, Motor Control PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 49
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1MB FLASH 64QFN
Packaging: Cut Tape (CT)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 27x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V
Connectivity: Brown-out Detect/Reset, DMA, I2S, POR, Motor Control PWM, WDT
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, Motor Control PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 49
DigiKey Programmable: Not Verified
на замовлення 3890 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 794.02 грн |
| 25+ | 700.35 грн |
| 100+ | 633.96 грн |
| 93C76CT-E/SN15KVAO |
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Виробник: Microchip Technology
Description: IC EEPROM 8KBIT MICROWIRE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 1K x 8, 512 x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 8KBIT MICROWIRE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 1K x 8, 512 x 16
DigiKey Programmable: Not Verified
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| 93C76C-I/W15K |
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Виробник: Microchip Technology
Description: IC EEPROM 8KBIT SPI 3MHZ DIE
Description: IC EEPROM 8KBIT SPI 3MHZ DIE
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| 93C76C-I/S15K |
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Виробник: Microchip Technology
Description: IC EEPROM 8KBIT SPI 3MHZ DIE
Description: IC EEPROM 8KBIT SPI 3MHZ DIE
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| 93C76C/WF15K |
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Виробник: Microchip Technology
Description: IC EEPROM 8KBIT SPI 3MHZ DIE
Description: IC EEPROM 8KBIT SPI 3MHZ DIE
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| MIC2564A-1BSM |
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Виробник: Microchip Technology
Description: DUAL SERIAL PCMCIA/CARDBUS POWER
Features: Status Flag
Packaging: Bulk
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: Serial
Switch Type: PCMCIA Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 1.3Ohm
Input Type: Non-Inverting
Voltage - Load: 3.3V, 5V, 12V
Current - Output (Max): 120mA
Ratio - Input:Output: 3:4
Supplier Device Package: 24-SSOP
Fault Protection: Current Limiting (Fixed), Over Temperature
Description: DUAL SERIAL PCMCIA/CARDBUS POWER
Features: Status Flag
Packaging: Bulk
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: Serial
Switch Type: PCMCIA Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 1.3Ohm
Input Type: Non-Inverting
Voltage - Load: 3.3V, 5V, 12V
Current - Output (Max): 120mA
Ratio - Input:Output: 3:4
Supplier Device Package: 24-SSOP
Fault Protection: Current Limiting (Fixed), Over Temperature
на замовлення 11005 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 210+ | 111.02 грн |
| MIC2564A-0BSM |
![]() |
Виробник: Microchip Technology
Description: DUAL SERIAL PCMCIA/CARDBUS POWER
Features: Status Flag
Packaging: Bulk
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: Serial
Switch Type: PCMCIA Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 1.3Ohm
Input Type: Non-Inverting
Voltage - Load: 3.3V, 5V, 12V
Current - Output (Max): 120mA
Ratio - Input:Output: 3:4
Supplier Device Package: 24-SSOP
Fault Protection: Current Limiting (Fixed), Over Temperature
Description: DUAL SERIAL PCMCIA/CARDBUS POWER
Features: Status Flag
Packaging: Bulk
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: Serial
Switch Type: PCMCIA Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 1.3Ohm
Input Type: Non-Inverting
Voltage - Load: 3.3V, 5V, 12V
Current - Output (Max): 120mA
Ratio - Input:Output: 3:4
Supplier Device Package: 24-SSOP
Fault Protection: Current Limiting (Fixed), Over Temperature
на замовлення 3474 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 192+ | 121.04 грн |
| 85HQ035 |
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Виробник: Microchip Technology
Description: DIODE SCHOTTKY 35V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 80 A
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
Description: DIODE SCHOTTKY 35V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 80 A
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
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| 51HQ035 |
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Виробник: Microchip Technology
Description: DIODE SCHOTTKY 35V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 60 A
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
Description: DIODE SCHOTTKY 35V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 60 A
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
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| 75HQ035 |
![]() |
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 35V 80A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 80 A
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
Description: DIODE SCHOTTKY 35V 80A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 80 A
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
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| GC2532-150A/TR |
Виробник: Microchip Technology
Description: SI SRD NON HERMETIC EPSM SMT
Description: SI SRD NON HERMETIC EPSM SMT
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| VCC1-B3E-12M3500000TR |
Виробник: Microchip Technology
Description: OSCILLATOR CMOS SMD
Description: OSCILLATOR CMOS SMD
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| VCC1-B3E-12M3500000 |
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Виробник: Microchip Technology
Description: OSCILLATOR CMOS SMD
Description: OSCILLATOR CMOS SMD
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| MXLPLAD15KP33A |
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Виробник: Microchip Technology
Description: TVS DIODE 33VWM 53.3VC PLAD
Description: TVS DIODE 33VWM 53.3VC PLAD
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| MX15KP33Ae3 |
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Виробник: Microchip Technology
Description: TVS DIODE 33VWM 54.8VC CASE 5A
Description: TVS DIODE 33VWM 54.8VC CASE 5A
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| MX5KP33A/TR |
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Виробник: Microchip Technology
Description: TVS DIODE 33VWM 53.3VC CASE 5A
Description: TVS DIODE 33VWM 53.3VC CASE 5A
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| MX5KP33Ae3 |
![]() |
Виробник: Microchip Technology
Description: TVS DIODE 33VWM 53.3VC CASE 5A
Description: TVS DIODE 33VWM 53.3VC CASE 5A
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| MXLPLAD15KP33Ae3 |
![]() |
Виробник: Microchip Technology
Description: TVS DIODE 33VWM 53.3VC PLAD
Description: TVS DIODE 33VWM 53.3VC PLAD
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| MX5KP33A |
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Виробник: Microchip Technology
Description: TVS DIODE 33VWM 53.3VC CASE 5A
Description: TVS DIODE 33VWM 53.3VC CASE 5A
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| JANTX2N6989U/TR |
Виробник: Microchip Technology
Description: TRANSISTOR QUAD SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 20-CLCC
Mounting Type: Surface Mount
Transistor Type: 4 NPN (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 20-CLCC
Grade: Military
Qualification: MIL-PRF-19500/559
Description: TRANSISTOR QUAD SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 20-CLCC
Mounting Type: Surface Mount
Transistor Type: 4 NPN (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 20-CLCC
Grade: Military
Qualification: MIL-PRF-19500/559
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| JANTX2N6989U |
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Виробник: Microchip Technology
Description: TRANS 4NPN 50V 0.8A 20CLCC
Packaging: Bulk
Package / Case: 20-CLCC
Mounting Type: Surface Mount
Transistor Type: 4 NPN (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 20-CLCC
Grade: Military
Qualification: MIL-PRF-19500/559
Description: TRANS 4NPN 50V 0.8A 20CLCC
Packaging: Bulk
Package / Case: 20-CLCC
Mounting Type: Surface Mount
Transistor Type: 4 NPN (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 20-CLCC
Grade: Military
Qualification: MIL-PRF-19500/559
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| Jantxv2N6989U |
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/559
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/559
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| JANTXV2N6989U/TR |
Виробник: Microchip Technology
Description: TRANSISTOR QUAD SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/559
Description: TRANSISTOR QUAD SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/559
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| JAN2N6989U/TR |
Виробник: Microchip Technology
Description: TRANSISTOR QUAD SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/559
Description: TRANSISTOR QUAD SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/559
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| Jan2N6989U |
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/559
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/559
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| JANS2N6989U |
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/559
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/559
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| JANS2N6989U/TR |
Виробник: Microchip Technology
Description: TRANSISTOR QUAD SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/559
Description: TRANSISTOR QUAD SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/559
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од. на суму грн.
| 2N6989U/TR |
Виробник: Microchip Technology
Description: TRANSISTOR QUAD SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 20-CLCC
Mounting Type: Surface Mount
Transistor Type: 4 NPN (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 20-CLCC
Grade: Military
Qualification: MIL-PRF-19500/559
Description: TRANSISTOR QUAD SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 20-CLCC
Mounting Type: Surface Mount
Transistor Type: 4 NPN (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 20-CLCC
Grade: Military
Qualification: MIL-PRF-19500/559
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од. на суму грн.
| JANTX1N2827B |
Виробник: Microchip Technology
Description: ZENER DIODE
Packaging: Bulk
Tolerance: ±5%
Package / Case: TO-204AD
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: TO-204AD (TO-3)
Power - Max: 10 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 32.7 V
Description: ZENER DIODE
Packaging: Bulk
Tolerance: ±5%
Package / Case: TO-204AD
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: TO-204AD (TO-3)
Power - Max: 10 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 32.7 V
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| JANTX1N2827RB |
Виробник: Microchip Technology
Description: ZENER DIODE
Packaging: Bulk
Tolerance: ±5%
Package / Case: TO-204AD
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: TO-204AD (TO-3)
Power - Max: 10 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 32.7 V
Description: ZENER DIODE
Packaging: Bulk
Tolerance: ±5%
Package / Case: TO-204AD
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: TO-204AD (TO-3)
Power - Max: 10 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 32.7 V
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| JANTXV1N2827B |
Виробник: Microchip Technology
Description: ZENER DIODE
Packaging: Bulk
Tolerance: ±5%
Package / Case: TO-204AD
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: TO-204AD (TO-3)
Power - Max: 10 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 32.7 V
Description: ZENER DIODE
Packaging: Bulk
Tolerance: ±5%
Package / Case: TO-204AD
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: TO-204AD (TO-3)
Power - Max: 10 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 32.7 V
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од. на суму грн.
| JANTXV1N2827RB |
Виробник: Microchip Technology
Description: ZENER DIODE
Packaging: Bulk
Tolerance: ±5%
Package / Case: TO-204AD
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: TO-204AD (TO-3)
Power - Max: 10 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 32.7 V
Description: ZENER DIODE
Packaging: Bulk
Tolerance: ±5%
Package / Case: TO-204AD
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: TO-204AD (TO-3)
Power - Max: 10 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 32.7 V
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од. на суму грн.
| JAN1N2827RB |
Виробник: Microchip Technology
Description: ZENER DIODE
Packaging: Bulk
Tolerance: ±5%
Package / Case: TO-204AD
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: TO-204AD (TO-3)
Power - Max: 10 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 32.7 V
Description: ZENER DIODE
Packaging: Bulk
Tolerance: ±5%
Package / Case: TO-204AD
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: TO-204AD (TO-3)
Power - Max: 10 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 32.7 V
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од. на суму грн.
| AT24CSW010-STUM-T |
![]() |
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT I2C TSOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: TSOT-23-5
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 1KBIT I2C TSOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: TSOT-23-5
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 20.21 грн |
| AT24CSW010-STUM-T |
![]() |
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT I2C TSOT23-5
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: TSOT-23-5
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 1KBIT I2C TSOT23-5
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: TSOT-23-5
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
на замовлення 5561 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 23.40 грн |
| AT24CSW040-STUM-T |
![]() |
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT I2C TSOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: TSOT-23-5
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 4KBIT I2C TSOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: TSOT-23-5
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
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од. на суму грн.
| AT24CSW040-STUM-T |
![]() |
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT I2C TSOT23-5
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: TSOT-23-5
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 4KBIT I2C TSOT23-5
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: TSOT-23-5
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
на замовлення 8565 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 16.72 грн |
| AT24CSW080-STUM-T |
![]() |
Виробник: Microchip Technology
Description: IC EEPROM 8KBIT I2C TSOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: TSOT-23-5
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 8KBIT I2C TSOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: TSOT-23-5
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
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В кошику
од. на суму грн.
| AT24CSW080-STUM-T |
![]() |
Виробник: Microchip Technology
Description: IC EEPROM 8KBIT I2C TSOT23-5
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: TSOT-23-5
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 8KBIT I2C TSOT23-5
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: TSOT-23-5
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
на замовлення 6387 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 17.55 грн |
| AT24CSW020-STUM-T |
![]() |
Виробник: Microchip Technology
Description: IC EEPROM 2KBIT I2C TSOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: TSOT-23-5
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 2KBIT I2C TSOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: TSOT-23-5
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
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од. на суму грн.
| AT24CSW020-STUM-T |
![]() |
Виробник: Microchip Technology
Description: IC EEPROM 2KBIT I2C TSOT23-5
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: TSOT-23-5
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 2KBIT I2C TSOT23-5
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: TSOT-23-5
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
на замовлення 6691 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 15.04 грн |
| AT24C01A-10TI-2.7-T |
![]() |
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 1KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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| AT24C01A-10SI-2.7-T |
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Виробник: Microchip Technology
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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| AT24C01AY1-10YU-1.8-T |
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Виробник: Microchip Technology
Description: IC EEPROM 1KBIT I2C 400KHZ 8MAP
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-MAP (3x4.9)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 1KBIT I2C 400KHZ 8MAP
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-MAP (3x4.9)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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| AT24C01A-10SI-1.8-T |
![]() |
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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| AT24C01A-10PC |
![]() |
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT I2C 400KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 1KBIT I2C 400KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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| AT24C01A-10TSU-1.8-T |
![]() |
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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| AT24C01A-10SU-1.8-T |
![]() |
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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