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SY89851UMG-TR SY89851UMG-TR Microchip Technology sy89851u.pdf Description: IC CLK BUFFER 1:2 4GHZ 16MLF
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad, 16-MLF®
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution), Translator
Input: CML, LVDS, PECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.6V
Ratio - Input:Output: 1:2
Differential - Input:Output: Yes/Yes
Supplier Device Package: 16-MLF® (3x3)
Part Status: Active
Frequency - Max: 4 GHz
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
1+353.41 грн
25+284.56 грн
100+258.32 грн
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MASMCJ7.5Ae3 MASMCJ7.5Ae3 Microchip Technology rf01001_rev_b_final-pd-000307351.pdf Description: TVS DIODE 7.5VWM 12.9V DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 116.3A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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PIC16LF723A-I/SO PIC16LF723A-I/SO Microchip Technology 40001417C.pdf Description: IC MCU 8BIT 7KB FLASH 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 7KB (4K x 14)
RAM Size: 192 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: PIC
Data Converters: A/D 11x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 28-SOIC
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
на замовлення 32 шт:
термін постачання 21-31 дні (днів)
3+122.63 грн
Мінімальне замовлення: 3
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PIC16LF723A-I/ML PIC16LF723A-I/ML Microchip Technology 40001417C.pdf Description: IC MCU 8BIT 7KB FLASH 28QFN
Packaging: Tube
Package / Case: 28-VQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 7KB (4K x 14)
RAM Size: 192 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: PIC
Data Converters: A/D 11x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 28-QFN (6x6)
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
на замовлення 445 шт:
термін постачання 21-31 дні (днів)
3+140.51 грн
25+124.16 грн
100+111.66 грн
Мінімальне замовлення: 3
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PIC16LF723A-I/SS PIC16LF723A-I/SS Microchip Technology 40001417C.pdf Description: IC MCU 8BIT 7KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 7KB (4K x 14)
RAM Size: 192 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: PIC
Data Converters: A/D 11x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Verified
на замовлення 1686 шт:
термін постачання 21-31 дні (днів)
3+124.33 грн
25+109.33 грн
100+99.17 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MA5KP58CAe3 MA5KP58CAe3 Microchip Technology rf01010_rb.pdf Description: TVS DIODE 58VWM 93.6VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 53A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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MA5KP54CAe3 MA5KP54CAe3 Microchip Technology 9461-m5kp-pdf Description: TVS DIODE 54VWM 87.1VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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MA5KP58CA MA5KP58CA Microchip Technology 9461-m5kp-pdf Description: TVS DIODE 58VWM 93.6VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 53A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
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MA5KP6.0A MA5KP6.0A Microchip Technology 9461-m5kp-pdf Description: TVS DIODE 6VWM 10.3VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 485A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
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MA5KP51CAe3 MA5KP51CAe3 Microchip Technology 9461-m5kp-pdf Description: TVS DIODE 51VWM 82.4VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 61A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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MA5KP54CA MA5KP54CA Microchip Technology 9461-m5kp-pdf Description: TVS DIODE 54VWM 87.1VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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24LC32AXT-E/ST 24LC32AXT-E/ST Microchip Technology 24AA32A-24LC32A-32-Kbit-I2C-Serial-EEPROM-DS20001713.pdf Description: IC EEPROM 32KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
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24LC32AXT-I/ST 24LC32AXT-I/ST Microchip Technology 24AA32A-24LC32A-32-Kbit-I2C-Serial-EEPROM-DS20001713.pdf Description: IC EEPROM 32KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
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24LC32AX-E/ST 24LC32AX-E/ST Microchip Technology 24AA32A-24LC32A-32-Kbit-I2C-Serial-EEPROM-DS20001713.pdf Description: IC EEPROM 32KBIT I2C 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
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24LC32AX-I/ST 24LC32AX-I/ST Microchip Technology 24AA32A-24LC32A-32-Kbit-I2C-Serial-EEPROM-DS20001713.pdf Description: IC EEPROM 32KBIT I2C 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
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MSC035SMA170S MSC035SMA170S Microchip Technology Microsemi_MSC035SMA170S_SiC_MOSFET_Datasheet_A.PDF Description: MOSFET SIC 1700V 35 MOHM TO-268
Packaging: Bulk
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.25V @ 2.5mA (Typ)
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 1000 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
1+3369.78 грн
25+2992.13 грн
В кошику  од. на суму  грн.
MSC080SMA120B MSC080SMA120B Microchip Technology MSC080SMA120B-SiC-MOSFET-Datasheet.pdf Description: SICFET N-CH 1200V 37A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V
на замовлення 186 шт:
термін постачання 21-31 дні (днів)
1+1038.10 грн
25+921.42 грн
100+752.75 грн
В кошику  од. на суму  грн.
MSC035SMA070B4 MSC035SMA070B4 Microchip Technology 1244749-msc035sma070b4-datasheet Description: TRANS SJT N-CH 700V 77A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V
Power Dissipation (Max): 283W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 2mA (Typ)
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 700 V
на замовлення 133 шт:
термін постачання 21-31 дні (днів)
1+1204.16 грн
25+1069.88 грн
100+930.08 грн
В кошику  од. на суму  грн.
MSC040SMA120B4 MSC040SMA120B4 Microchip Technology 1244456-msc040sma120b4-datasheet Description: SICFET N-CH 1200V 66A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Power Dissipation (Max): 323W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 2mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V
на замовлення 136 шт:
термін постачання 21-31 дні (днів)
1+1427.28 грн
25+1267.48 грн
100+1103.05 грн
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MSC040SMA120S MSC040SMA120S Microchip Technology 1244005-msc040sma120s-datasheet Description: SICFET N-CH 1200V 64A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Power Dissipation (Max): 303W
Vgs(th) (Max) @ Id: 2.6V @ 2mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
1+2054.91 грн
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MSC090SMA070S MSC090SMA070S Microchip Technology 1244481-msc090sma070s-datasheet Description: SICFET N-CH 700V D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Supplier Device Package: D3Pak
Part Status: Active
Drain to Source Voltage (Vdss): 700 V
на замовлення 103 шт:
термін постачання 21-31 дні (днів)
1+691.50 грн
25+613.76 грн
100+498.78 грн
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MSC090SMA070B MSC090SMA070B Microchip Technology MSC090SMA070B-SiC-MOSFET-Datasheet.pdf Description: SICFET N-CH 700V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Supplier Device Package: TO-247-3
Part Status: Active
Drain to Source Voltage (Vdss): 700 V
на замовлення 127 шт:
термін постачання 21-31 дні (днів)
1+426.65 грн
25+379.19 грн
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MSC050SDA070BCT MSC050SDA070BCT Microchip Technology 1244775-msc050sda070bct-datasheet Description: DIODE SIL CARB 700V 88A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2034pF @ 1V, 1MHz
Current - Average Rectified (Io): 88A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 200 µA @ 700 V
на замовлення 124 шт:
термін постачання 21-31 дні (днів)
1+838.82 грн
25+744.81 грн
100+647.91 грн
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MSC030SDA070BCT MSC030SDA070BCT Microchip Technology 1244773-msc030sda070bct-datasheet Description: SIC SBD 700 V 30 A TO-247
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
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MSC050SDA070S MSC050SDA070S Microchip Technology 1244193-msc050sda070s-datasheet Description: DIODE SIL CARBIDE 700V 88A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2034pF @ 1V, 1MHz
Current - Average Rectified (Io): 88A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 200 µA @ 700 V
на замовлення 66 шт:
термін постачання 21-31 дні (днів)
1+488.82 грн
25+434.01 грн
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MSC030SDA070K MSC030SDA070K Microchip Technology 1243329-msc030sda070k-datasheet Description: DIODE SIL CARB 700V 30A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
на замовлення 119 шт:
термін постачання 21-31 дні (днів)
1+542.47 грн
25+481.24 грн
100+433.88 грн
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MSC030SDA070S MSC030SDA070S Microchip Technology 1244228-msc030sda070s-datasheet Description: DIODE SIL CARBIDE 700V 60A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 700 V
на замовлення 108 шт:
термін постачання 21-31 дні (днів)
1+646.36 грн
25+575.16 грн
100+482.78 грн
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MSC035SMA070S MSC035SMA070S Microchip Technology 1244334-msc035sma070s-datasheet Description: MOSFET N-CH 700V D3PAK
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V
Power Dissipation (Max): 206W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 700 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
1+1288.47 грн
25+1143.33 грн
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MSC035SMA070B MSC035SMA070B Microchip Technology MSC035SMA070B-SiC-MOSFET-Datasheet.pdf Description: MOSFET N-CH 700V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V
Power Dissipation (Max): 283W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 2mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 700 V
на замовлення 110 шт:
термін постачання 21-31 дні (днів)
1+854.15 грн
25+758.68 грн
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MSC030SDA070B MSC030SDA070B Microchip Technology 1243901-msc030sda070b-datasheet Description: DIODE SIL CARBIDE 700V 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1200pF @ 1V, 1MHz
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 700 V
на замовлення 96 шт:
термін постачання 21-31 дні (днів)
1+572.27 грн
25+507.62 грн
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MSC080SMA120B4 MSC080SMA120B4 Microchip Technology MSC080SMA120B4-SiC-MOSFET-Datasheet.pdf Description: SICFET N-CH 1200V 37A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V
на замовлення 94 шт:
термін постачання 21-31 дні (днів)
1+748.56 грн
25+665.00 грн
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JANTX1N4989US JANTX1N4989US Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 200V 5W D5B
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 500 Ohms
Supplier Device Package: D-5B
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 152 V
Qualification: MIL-PRF-19500/356
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PIC32MK1024MCF064T-I/MR PIC32MK1024MCF064T-I/MR Microchip Technology PIC32MK_GP_MC_Familly_Datasheet_60001402G.pdf Description: IC MCU 32BIT 1MB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 27x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V
Connectivity: Brown-out Detect/Reset, DMA, I2S, POR, Motor Control PWM, WDT
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, Motor Control PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 49
DigiKey Programmable: Not Verified
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PIC32MK1024MCF064T-I/MR PIC32MK1024MCF064T-I/MR Microchip Technology PIC32MK_GP_MC_Familly_Datasheet_60001402G.pdf Description: IC MCU 32BIT 1MB FLASH 64QFN
Packaging: Cut Tape (CT)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 27x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V
Connectivity: Brown-out Detect/Reset, DMA, I2S, POR, Motor Control PWM, WDT
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, Motor Control PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 49
DigiKey Programmable: Not Verified
на замовлення 3890 шт:
термін постачання 21-31 дні (днів)
1+809.02 грн
25+713.58 грн
100+645.94 грн
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93C76CT-E/SN15KVAO 93C76CT-E/SN15KVAO Microchip Technology 21796M.pdf Description: IC EEPROM 8KBIT MICROWIRE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 1K x 8, 512 x 16
DigiKey Programmable: Not Verified
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93C76C-I/W15K Microchip Technology 21796M.pdf Description: IC EEPROM 8KBIT SPI 3MHZ DIE
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93C76C-I/S15K Microchip Technology 21796M.pdf Description: IC EEPROM 8KBIT SPI 3MHZ DIE
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93C76C/WF15K Microchip Technology 21796M.pdf Description: IC EEPROM 8KBIT SPI 3MHZ DIE
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MIC2564A-1BSM MIC2564A-1BSM Microchip Technology MCRLS05898-1.pdf?t.download=true&u=5oefqw Description: DUAL SERIAL PCMCIA/CARDBUS POWER
Features: Status Flag
Packaging: Bulk
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: Serial
Switch Type: PCMCIA Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 1.3Ohm
Input Type: Non-Inverting
Voltage - Load: 3.3V, 5V, 12V
Current - Output (Max): 120mA
Ratio - Input:Output: 3:4
Supplier Device Package: 24-SSOP
Fault Protection: Current Limiting (Fixed), Over Temperature
на замовлення 11005 шт:
термін постачання 21-31 дні (днів)
210+113.11 грн
Мінімальне замовлення: 210
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MIC2564A-0BSM MIC2564A-0BSM Microchip Technology MCRLS05898-1.pdf?t.download=true&u=5oefqw Description: DUAL SERIAL PCMCIA/CARDBUS POWER
Features: Status Flag
Packaging: Bulk
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: Serial
Switch Type: PCMCIA Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 1.3Ohm
Input Type: Non-Inverting
Voltage - Load: 3.3V, 5V, 12V
Current - Output (Max): 120mA
Ratio - Input:Output: 3:4
Supplier Device Package: 24-SSOP
Fault Protection: Current Limiting (Fixed), Over Temperature
на замовлення 3474 шт:
термін постачання 21-31 дні (днів)
192+123.33 грн
Мінімальне замовлення: 192
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85HQ035 85HQ035 Microchip Technology SBR8040-8050.pdf Description: DIODE SCHOTTKY 35V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 80 A
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
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51HQ035 51HQ035 Microchip Technology msc1522.pdf Description: DIODE SCHOTTKY 35V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 60 A
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
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75HQ035 75HQ035 Microchip Technology SBR8040-8050.pdf Description: DIODE SCHOTTKY 35V 80A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 80 A
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
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GC2532-150A/TR Microchip Technology Description: SI SRD NON HERMETIC EPSM SMT
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VCC1-B3E-12M3500000TR VCC1-B3E-12M3500000TR Microchip Technology Description: OSCILLATOR CMOS SMD
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VCC1-B3E-12M3500000 Microchip Technology VCC1-April-2020.pdf Description: OSCILLATOR CMOS SMD
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MXLPLAD15KP33A Microchip Technology 9522-mplad15kp-datasheet Description: TVS DIODE 33VWM 53.3VC PLAD
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MX15KP33Ae3 MX15KP33Ae3 Microchip Technology 9460-rf01011-m15kp-rev-e Description: TVS DIODE 33VWM 54.8VC CASE 5A
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MX5KP33A/TR MX5KP33A/TR Microchip Technology 9460-rf01011-m15kp-rev-e-datasheet Description: TVS DIODE 33VWM 53.3VC CASE 5A
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MX5KP33Ae3 MX5KP33Ae3 Microchip Technology 9461-m5kp-pdf Description: TVS DIODE 33VWM 53.3VC CASE 5A
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MXLPLAD15KP33Ae3 Microchip Technology 9522-mplad15kp-datasheet Description: TVS DIODE 33VWM 53.3VC PLAD
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MX5KP33A MX5KP33A Microchip Technology 9461-m5kp-pdf Description: TVS DIODE 33VWM 53.3VC CASE 5A
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JANTX2N6989U/TR JANTX2N6989U/TR Microchip Technology Description: TRANSISTOR QUAD SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 20-CLCC
Mounting Type: Surface Mount
Transistor Type: 4 NPN (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 20-CLCC
Grade: Military
Qualification: MIL-PRF-19500/559
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JANTX2N6989U Microchip Technology 77286-lds-0177-datasheet Description: TRANS 4NPN 50V 0.8A 20CLCC
Packaging: Bulk
Package / Case: 20-CLCC
Mounting Type: Surface Mount
Transistor Type: 4 NPN (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 20-CLCC
Grade: Military
Qualification: MIL-PRF-19500/559
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Jantxv2N6989U Microchip Technology Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/559
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JANTXV2N6989U/TR JANTXV2N6989U/TR Microchip Technology Description: TRANSISTOR QUAD SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/559
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JAN2N6989U/TR JAN2N6989U/TR Microchip Technology Description: TRANSISTOR QUAD SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/559
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Jan2N6989U Microchip Technology Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/559
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JANS2N6989U Microchip Technology Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/559
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JANS2N6989U/TR JANS2N6989U/TR Microchip Technology Description: TRANSISTOR QUAD SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/559
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SY89851UMG-TR sy89851u.pdf
SY89851UMG-TR
Виробник: Microchip Technology
Description: IC CLK BUFFER 1:2 4GHZ 16MLF
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad, 16-MLF®
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution), Translator
Input: CML, LVDS, PECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.6V
Ratio - Input:Output: 1:2
Differential - Input:Output: Yes/Yes
Supplier Device Package: 16-MLF® (3x3)
Part Status: Active
Frequency - Max: 4 GHz
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+353.41 грн
25+284.56 грн
100+258.32 грн
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MASMCJ7.5Ae3 rf01001_rev_b_final-pd-000307351.pdf
MASMCJ7.5Ae3
Виробник: Microchip Technology
Description: TVS DIODE 7.5VWM 12.9V DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 116.3A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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PIC16LF723A-I/SO 40001417C.pdf
PIC16LF723A-I/SO
Виробник: Microchip Technology
Description: IC MCU 8BIT 7KB FLASH 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 7KB (4K x 14)
RAM Size: 192 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: PIC
Data Converters: A/D 11x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 28-SOIC
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
на замовлення 32 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+122.63 грн
Мінімальне замовлення: 3
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PIC16LF723A-I/ML 40001417C.pdf
PIC16LF723A-I/ML
Виробник: Microchip Technology
Description: IC MCU 8BIT 7KB FLASH 28QFN
Packaging: Tube
Package / Case: 28-VQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 7KB (4K x 14)
RAM Size: 192 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: PIC
Data Converters: A/D 11x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 28-QFN (6x6)
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
на замовлення 445 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+140.51 грн
25+124.16 грн
100+111.66 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
PIC16LF723A-I/SS 40001417C.pdf
PIC16LF723A-I/SS
Виробник: Microchip Technology
Description: IC MCU 8BIT 7KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 7KB (4K x 14)
RAM Size: 192 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: PIC
Data Converters: A/D 11x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Verified
на замовлення 1686 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+124.33 грн
25+109.33 грн
100+99.17 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MA5KP58CAe3 rf01010_rb.pdf
MA5KP58CAe3
Виробник: Microchip Technology
Description: TVS DIODE 58VWM 93.6VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 53A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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MA5KP54CAe3 9461-m5kp-pdf
MA5KP54CAe3
Виробник: Microchip Technology
Description: TVS DIODE 54VWM 87.1VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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MA5KP58CA 9461-m5kp-pdf
MA5KP58CA
Виробник: Microchip Technology
Description: TVS DIODE 58VWM 93.6VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 53A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
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MA5KP6.0A 9461-m5kp-pdf
MA5KP6.0A
Виробник: Microchip Technology
Description: TVS DIODE 6VWM 10.3VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 485A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
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MA5KP51CAe3 9461-m5kp-pdf
MA5KP51CAe3
Виробник: Microchip Technology
Description: TVS DIODE 51VWM 82.4VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 61A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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MA5KP54CA 9461-m5kp-pdf
MA5KP54CA
Виробник: Microchip Technology
Description: TVS DIODE 54VWM 87.1VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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24LC32AXT-E/ST 24AA32A-24LC32A-32-Kbit-I2C-Serial-EEPROM-DS20001713.pdf
24LC32AXT-E/ST
Виробник: Microchip Technology
Description: IC EEPROM 32KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
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24LC32AXT-I/ST 24AA32A-24LC32A-32-Kbit-I2C-Serial-EEPROM-DS20001713.pdf
24LC32AXT-I/ST
Виробник: Microchip Technology
Description: IC EEPROM 32KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
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24LC32AX-E/ST 24AA32A-24LC32A-32-Kbit-I2C-Serial-EEPROM-DS20001713.pdf
24LC32AX-E/ST
Виробник: Microchip Technology
Description: IC EEPROM 32KBIT I2C 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
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24LC32AX-I/ST 24AA32A-24LC32A-32-Kbit-I2C-Serial-EEPROM-DS20001713.pdf
24LC32AX-I/ST
Виробник: Microchip Technology
Description: IC EEPROM 32KBIT I2C 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
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MSC035SMA170S Microsemi_MSC035SMA170S_SiC_MOSFET_Datasheet_A.PDF
MSC035SMA170S
Виробник: Microchip Technology
Description: MOSFET SIC 1700V 35 MOHM TO-268
Packaging: Bulk
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.25V @ 2.5mA (Typ)
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 1000 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3369.78 грн
25+2992.13 грн
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MSC080SMA120B MSC080SMA120B-SiC-MOSFET-Datasheet.pdf
MSC080SMA120B
Виробник: Microchip Technology
Description: SICFET N-CH 1200V 37A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V
на замовлення 186 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1038.10 грн
25+921.42 грн
100+752.75 грн
В кошику  од. на суму  грн.
MSC035SMA070B4 1244749-msc035sma070b4-datasheet
MSC035SMA070B4
Виробник: Microchip Technology
Description: TRANS SJT N-CH 700V 77A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V
Power Dissipation (Max): 283W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 2mA (Typ)
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 700 V
на замовлення 133 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1204.16 грн
25+1069.88 грн
100+930.08 грн
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MSC040SMA120B4 1244456-msc040sma120b4-datasheet
MSC040SMA120B4
Виробник: Microchip Technology
Description: SICFET N-CH 1200V 66A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Power Dissipation (Max): 323W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 2mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V
на замовлення 136 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1427.28 грн
25+1267.48 грн
100+1103.05 грн
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MSC040SMA120S 1244005-msc040sma120s-datasheet
MSC040SMA120S
Виробник: Microchip Technology
Description: SICFET N-CH 1200V 64A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Power Dissipation (Max): 303W
Vgs(th) (Max) @ Id: 2.6V @ 2mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2054.91 грн
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MSC090SMA070S 1244481-msc090sma070s-datasheet
MSC090SMA070S
Виробник: Microchip Technology
Description: SICFET N-CH 700V D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Supplier Device Package: D3Pak
Part Status: Active
Drain to Source Voltage (Vdss): 700 V
на замовлення 103 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+691.50 грн
25+613.76 грн
100+498.78 грн
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MSC090SMA070B MSC090SMA070B-SiC-MOSFET-Datasheet.pdf
MSC090SMA070B
Виробник: Microchip Technology
Description: SICFET N-CH 700V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Supplier Device Package: TO-247-3
Part Status: Active
Drain to Source Voltage (Vdss): 700 V
на замовлення 127 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+426.65 грн
25+379.19 грн
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MSC050SDA070BCT 1244775-msc050sda070bct-datasheet
MSC050SDA070BCT
Виробник: Microchip Technology
Description: DIODE SIL CARB 700V 88A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2034pF @ 1V, 1MHz
Current - Average Rectified (Io): 88A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 200 µA @ 700 V
на замовлення 124 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+838.82 грн
25+744.81 грн
100+647.91 грн
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MSC030SDA070BCT 1244773-msc030sda070bct-datasheet
MSC030SDA070BCT
Виробник: Microchip Technology
Description: SIC SBD 700 V 30 A TO-247
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
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MSC050SDA070S 1244193-msc050sda070s-datasheet
MSC050SDA070S
Виробник: Microchip Technology
Description: DIODE SIL CARBIDE 700V 88A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2034pF @ 1V, 1MHz
Current - Average Rectified (Io): 88A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 200 µA @ 700 V
на замовлення 66 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+488.82 грн
25+434.01 грн
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MSC030SDA070K 1243329-msc030sda070k-datasheet
MSC030SDA070K
Виробник: Microchip Technology
Description: DIODE SIL CARB 700V 30A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
на замовлення 119 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+542.47 грн
25+481.24 грн
100+433.88 грн
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MSC030SDA070S 1244228-msc030sda070s-datasheet
MSC030SDA070S
Виробник: Microchip Technology
Description: DIODE SIL CARBIDE 700V 60A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 700 V
на замовлення 108 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+646.36 грн
25+575.16 грн
100+482.78 грн
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MSC035SMA070S 1244334-msc035sma070s-datasheet
MSC035SMA070S
Виробник: Microchip Technology
Description: MOSFET N-CH 700V D3PAK
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V
Power Dissipation (Max): 206W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 700 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1288.47 грн
25+1143.33 грн
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MSC035SMA070B MSC035SMA070B-SiC-MOSFET-Datasheet.pdf
MSC035SMA070B
Виробник: Microchip Technology
Description: MOSFET N-CH 700V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V
Power Dissipation (Max): 283W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 2mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 700 V
на замовлення 110 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+854.15 грн
25+758.68 грн
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MSC030SDA070B 1243901-msc030sda070b-datasheet
MSC030SDA070B
Виробник: Microchip Technology
Description: DIODE SIL CARBIDE 700V 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1200pF @ 1V, 1MHz
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 700 V
на замовлення 96 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+572.27 грн
25+507.62 грн
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MSC080SMA120B4 MSC080SMA120B4-SiC-MOSFET-Datasheet.pdf
MSC080SMA120B4
Виробник: Microchip Technology
Description: SICFET N-CH 1200V 37A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V
на замовлення 94 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+748.56 грн
25+665.00 грн
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JANTX1N4989US 11059-sd44a-datasheet
JANTX1N4989US
Виробник: Microchip Technology
Description: DIODE ZENER 200V 5W D5B
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 500 Ohms
Supplier Device Package: D-5B
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 152 V
Qualification: MIL-PRF-19500/356
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PIC32MK1024MCF064T-I/MR PIC32MK_GP_MC_Familly_Datasheet_60001402G.pdf
PIC32MK1024MCF064T-I/MR
Виробник: Microchip Technology
Description: IC MCU 32BIT 1MB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 27x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V
Connectivity: Brown-out Detect/Reset, DMA, I2S, POR, Motor Control PWM, WDT
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, Motor Control PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 49
DigiKey Programmable: Not Verified
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PIC32MK1024MCF064T-I/MR PIC32MK_GP_MC_Familly_Datasheet_60001402G.pdf
PIC32MK1024MCF064T-I/MR
Виробник: Microchip Technology
Description: IC MCU 32BIT 1MB FLASH 64QFN
Packaging: Cut Tape (CT)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 27x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V
Connectivity: Brown-out Detect/Reset, DMA, I2S, POR, Motor Control PWM, WDT
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, Motor Control PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 49
DigiKey Programmable: Not Verified
на замовлення 3890 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+809.02 грн
25+713.58 грн
100+645.94 грн
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93C76CT-E/SN15KVAO 21796M.pdf
93C76CT-E/SN15KVAO
Виробник: Microchip Technology
Description: IC EEPROM 8KBIT MICROWIRE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 1K x 8, 512 x 16
DigiKey Programmable: Not Verified
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93C76C-I/W15K 21796M.pdf
Виробник: Microchip Technology
Description: IC EEPROM 8KBIT SPI 3MHZ DIE
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93C76C-I/S15K 21796M.pdf
Виробник: Microchip Technology
Description: IC EEPROM 8KBIT SPI 3MHZ DIE
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93C76C/WF15K 21796M.pdf
Виробник: Microchip Technology
Description: IC EEPROM 8KBIT SPI 3MHZ DIE
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MIC2564A-1BSM MCRLS05898-1.pdf?t.download=true&u=5oefqw
MIC2564A-1BSM
Виробник: Microchip Technology
Description: DUAL SERIAL PCMCIA/CARDBUS POWER
Features: Status Flag
Packaging: Bulk
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: Serial
Switch Type: PCMCIA Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 1.3Ohm
Input Type: Non-Inverting
Voltage - Load: 3.3V, 5V, 12V
Current - Output (Max): 120mA
Ratio - Input:Output: 3:4
Supplier Device Package: 24-SSOP
Fault Protection: Current Limiting (Fixed), Over Temperature
на замовлення 11005 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
210+113.11 грн
Мінімальне замовлення: 210
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MIC2564A-0BSM MCRLS05898-1.pdf?t.download=true&u=5oefqw
MIC2564A-0BSM
Виробник: Microchip Technology
Description: DUAL SERIAL PCMCIA/CARDBUS POWER
Features: Status Flag
Packaging: Bulk
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: Serial
Switch Type: PCMCIA Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 1.3Ohm
Input Type: Non-Inverting
Voltage - Load: 3.3V, 5V, 12V
Current - Output (Max): 120mA
Ratio - Input:Output: 3:4
Supplier Device Package: 24-SSOP
Fault Protection: Current Limiting (Fixed), Over Temperature
на замовлення 3474 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
192+123.33 грн
Мінімальне замовлення: 192
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85HQ035 SBR8040-8050.pdf
85HQ035
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 35V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 80 A
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
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51HQ035 msc1522.pdf
51HQ035
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 35V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 60 A
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
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75HQ035 SBR8040-8050.pdf
75HQ035
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 35V 80A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 80 A
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
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GC2532-150A/TR
Виробник: Microchip Technology
Description: SI SRD NON HERMETIC EPSM SMT
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VCC1-B3E-12M3500000TR
VCC1-B3E-12M3500000TR
Виробник: Microchip Technology
Description: OSCILLATOR CMOS SMD
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VCC1-B3E-12M3500000 VCC1-April-2020.pdf
Виробник: Microchip Technology
Description: OSCILLATOR CMOS SMD
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MXLPLAD15KP33A 9522-mplad15kp-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 33VWM 53.3VC PLAD
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MX15KP33Ae3 9460-rf01011-m15kp-rev-e
MX15KP33Ae3
Виробник: Microchip Technology
Description: TVS DIODE 33VWM 54.8VC CASE 5A
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MX5KP33A/TR 9460-rf01011-m15kp-rev-e-datasheet
MX5KP33A/TR
Виробник: Microchip Technology
Description: TVS DIODE 33VWM 53.3VC CASE 5A
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MX5KP33Ae3 9461-m5kp-pdf
MX5KP33Ae3
Виробник: Microchip Technology
Description: TVS DIODE 33VWM 53.3VC CASE 5A
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MXLPLAD15KP33Ae3 9522-mplad15kp-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 33VWM 53.3VC PLAD
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MX5KP33A 9461-m5kp-pdf
MX5KP33A
Виробник: Microchip Technology
Description: TVS DIODE 33VWM 53.3VC CASE 5A
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JANTX2N6989U/TR
JANTX2N6989U/TR
Виробник: Microchip Technology
Description: TRANSISTOR QUAD SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 20-CLCC
Mounting Type: Surface Mount
Transistor Type: 4 NPN (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 20-CLCC
Grade: Military
Qualification: MIL-PRF-19500/559
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JANTX2N6989U 77286-lds-0177-datasheet
Виробник: Microchip Technology
Description: TRANS 4NPN 50V 0.8A 20CLCC
Packaging: Bulk
Package / Case: 20-CLCC
Mounting Type: Surface Mount
Transistor Type: 4 NPN (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 20-CLCC
Grade: Military
Qualification: MIL-PRF-19500/559
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Jantxv2N6989U
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/559
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JANTXV2N6989U/TR
JANTXV2N6989U/TR
Виробник: Microchip Technology
Description: TRANSISTOR QUAD SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/559
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JAN2N6989U/TR
JAN2N6989U/TR
Виробник: Microchip Technology
Description: TRANSISTOR QUAD SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/559
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Jan2N6989U
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/559
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JANS2N6989U
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/559
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JANS2N6989U/TR
JANS2N6989U/TR
Виробник: Microchip Technology
Description: TRANSISTOR QUAD SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/559
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