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MIC2077-2YM-TR MIC2077-2YM-TR Microchip Technology mic2027.pdf Description: IC PWR SWITCH N-CH 2X1:2 16SOIC
Features: Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 100mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 2 x 1:2
Supplier Device Package: 16-SOIC
Fault Protection: Current Limiting (Fixed), Over Temperature, UVLO
Part Status: Active
на замовлення 2892 шт:
термін постачання 21-31 дні (днів)
2+265.70 грн
25+212.79 грн
100+194.61 грн
Мінімальне замовлення: 2
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MIC33M350YMP-TRVAO Microchip Technology Description: IC REG BUCK SELECTABLE 3A 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Output Type: Selectable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 1.2MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 24-QFN (3x4.5)
Synchronous Rectifier: No
Voltage - Input (Min): 2.4V
Voltage - Output (Min/Fixed): 0.6V, 0.8V, 0.9V, 1V, 1.2V, 1.5V, 1.8V, 2.5V, 3.3V
Part Status: Active
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MXL15KP220CA MXL15KP220CA Microchip Technology 9460-rf01011-m15kp-rev-e Description: TVS DIODE 220VWM 356VC CASE 5A
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MX15KP220CAe3 MX15KP220CAe3 Microchip Technology 9460-rf01011-m15kp-rev-e Description: TVS DIODE 220VWM 356VC CASE 5A
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MA15KP220CA MA15KP220CA Microchip Technology 9460-rf01011-m15kp-rev-e Description: TVS DIODE 220VWM 356VC DO204AR
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MX15KP220CA MX15KP220CA Microchip Technology 9460-rf01011-m15kp-rev-e Description: TVS DIODE 220VWM 356VC CASE 5A
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MXL15KP220CAe3 MXL15KP220CAe3 Microchip Technology 9460-rf01011-m15kp-rev-e Description: TVS DIODE 220VWM 356VC CASE 5A
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M15KP220CAe3 M15KP220CAe3 Microchip Technology 9460-rf01011-m15kp-rev-e Description: TVS DIODE 220VWM 356VC DO204AR
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MA15KP220CAe3 MA15KP220CAe3 Microchip Technology 9460-rf01011-m15kp-rev-e Description: TVS DIODE 220VWM 356VC DO204AR
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DSC1001DL1-050.0000T Microchip Technology MCHP-S-A0003587227-1.pdf?t.download=true&u=5oefqw Description: MEMS OSC XO 50.0000MHZ CMOS SMD
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DSC1001DL2-049.5000 DSC1001DL2-049.5000 Microchip Technology MCHP-S-A0003587227-1.pdf?t.download=true&u=5oefqw Description: MEMS OSC XO 49.5000MHZ CMOS SMD
Packaging: Tube
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 7.2mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 49.5 MHz
Base Resonator: MEMS
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DSA1001DL3-100.0000VAO DSA1001DL3-100.0000VAO Microchip Technology DSA1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-for-Automotive-DS20005889B.pdf Description: MEMS OSC AUTO LP -40C-105C 20PPM
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DSA1001DL3-030.0000VAO DSA1001DL3-030.0000VAO Microchip Technology DSA1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-for-Automotive-DS20005889B.pdf Description: MEMS OSC., AUTOMOTIVE, LOW POWER
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DSC1001DL1-007.3728 DSC1001DL1-007.3728 Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: MEMS OSC XO 7.3728MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.7V ~ 3.6V
Current - Supply (Max): 8mA
Supplier Device Package: 4-CDFN (2.5x2)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 7.3728 MHz
Base Resonator: MEMS
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
7+53.65 грн
10+50.68 грн
50+49.89 грн
Мінімальне замовлення: 7
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DSA1001DL3-080.0000TVAO DSA1001DL3-080.0000TVAO Microchip Technology DSA1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-for-Automotive-DS20005889B.pdf Description: OSC MEMS -40C-85C, 50PPM, 2.5X2.
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DSC1001DL1-004.0000 Microchip Technology MCHP-S-A0003587227-1.pdf?t.download=true&u=5oefqw Description: MEMS OSC XO 4.0000MHZ CMOS SMD
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DSA1001DL1-012.0000VAO DSA1001DL1-012.0000VAO Microchip Technology DSA1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-for-Automotive-DS20005889B.pdf Description: MEMS OSC., AUTOMOTIVE, LOW POWER
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DSA1001DL2-048.0000TVAO DSA1001DL2-048.0000TVAO Microchip Technology DSA1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-for-Automotive-DS20005889B.pdf Description: MEMS OSC AUTO LP -40C-105C 25PPM
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DSA1001DL3-030.0000TVAO DSA1001DL3-030.0000TVAO Microchip Technology filehandler.aspx?ddocname=en605035 Description: MEMS OSC., AUTOMOTIVE, LOW POWER
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DSA1001DL2-024.5640VAO DSA1001DL2-024.5640VAO Microchip Technology DSA1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-for-Automotive-DS20005889B.pdf Description: MEMS OSC AUTO LP -40C-105C 25PPM
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DSA1001DL1-012.0000TVAO DSA1001DL1-012.0000TVAO Microchip Technology filehandler.aspx?ddocname=en605035 Description: MEMS OSC., AUTOMOTIVE, LOW POWER
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ATSAMR21G16A-MF ATSAMR21G16A-MF Microchip Technology ATSAMR21E_G_Prelim_Summary_7-15-14.pdf Description: IC RF TXRX+MCU ISM>1GHZ 48VFQFN
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ATSAMR21G17A-MF ATSAMR21G17A-MF Microchip Technology ATSAMR21E_G_Prelim_Summary_7-15-14.pdf Description: IC RF TXRX+MCU ISM>1GHZ 48VFQFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Sensitivity: -99dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 4dBm
Current - Receiving: 11.3mA ~ 11.8mA
Data Rate (Max): 250kbps
Current - Transmitting: 7.2mA ~ 13.8mA
Supplier Device Package: 48-QFN (7x7)
GPIO: 28
Modulation: O-QPSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: I²C, SPI, UART, USART, USB
DigiKey Programmable: Not Verified
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ATSAMR21G16A-MFT ATSAMR21G16A-MFT Microchip Technology ATSAMR21E_G_Prelim_Summary_7-15-14.pdf Description: IC RF TXRX+MCU ISM>1GHZ 48VFQFN
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ATSAMR21G16A-MFT ATSAMR21G16A-MFT Microchip Technology ATSAMR21E_G_Prelim_Summary_7-15-14.pdf Description: IC RF TXRX+MCU ISM>1GHZ 48VFQFN
на замовлення 3930 шт:
термін постачання 21-31 дні (днів)
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ATSAMR21G17A-MFT ATSAMR21G17A-MFT Microchip Technology ATSAMR21E_G_Prelim_Summary_7-15-14.pdf Description: IC RF TXRX+MCU ISM>1GHZ 48VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Sensitivity: -99dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 4dBm
Current - Receiving: 11.3mA ~ 11.8mA
Data Rate (Max): 250kbps
Current - Transmitting: 7.2mA ~ 13.8mA
Supplier Device Package: 48-QFN (7x7)
GPIO: 28
Modulation: O-QPSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: I²C, SPI, UART, USART, USB
DigiKey Programmable: Not Verified
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ATSAMR21G17A-MFT ATSAMR21G17A-MFT Microchip Technology ATSAMR21E_G_Prelim_Summary_7-15-14.pdf Description: IC RF TXRX+MCU ISM>1GHZ 48VFQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Sensitivity: -99dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 4dBm
Current - Receiving: 11.3mA ~ 11.8mA
Data Rate (Max): 250kbps
Current - Transmitting: 7.2mA ~ 13.8mA
Supplier Device Package: 48-QFN (7x7)
GPIO: 28
Modulation: O-QPSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: I²C, SPI, UART, USART, USB
DigiKey Programmable: Not Verified
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MIC2012PZMTR Microchip Technology MCRLS03410-1.pdf?t.download=true&u=5oefqw Description: USB POWER CONTROLLER
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Function: Controller
Interface: USB
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Supply: 22µA
Protocol: USB
Supplier Device Package: 8-SOIC
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
238+107.30 грн
Мінімальне замовлення: 238
В кошику  од. на суму  грн.
MIC2015-0.8YMLTR MIC2015-0.8YMLTR Microchip Technology MCRLS04133-1.pdf?t.download=true&u=5oefqw Description: FIXED CURRENT LIMIT POWER DISTRI
Features: Slew Rate Controlled
Packaging: Bulk
Package / Case: 6-VDFN Exposed Pad, 6-MLF®
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 2.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.1A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-MLF® (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Part Status: Active
на замовлення 2301 шт:
термін постачання 21-31 дні (днів)
1110+22.99 грн
Мінімальне замовлення: 1110
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MIC2013-0.5YMLTR MIC2013-0.5YMLTR Microchip Technology MCRLS04133-1.pdf?t.download=true&u=5oefqw Description: CURRENT LIMITING CIRCUIT PROTECT
Packaging: Bulk
Package / Case: 6-VDFN Exposed Pad, 6-MLF®
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 2.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.1A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-MLF® (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Part Status: Active
на замовлення 4085 шт:
термін постачання 21-31 дні (днів)
1110+21.51 грн
Мінімальне замовлення: 1110
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JANTX2N3810U Microchip Technology 8931-lds-0118-datasheet Description: TRANS 2PNP 60V 0.05A
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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JANSR2N3810U Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Tray
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 100µA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/336
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JANSR2N3810U/TR JANSR2N3810U/TR Microchip Technology Description: TRANSISTOR DUAL RH SMALL-SIGNAL
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 100µA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/336
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JANTXV2N3810U/TR JANTXV2N3810U/TR Microchip Technology Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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JANTX2N3810U/TR JANTX2N3810U/TR Microchip Technology Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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JAN2N3810 Microchip Technology 8931-lds-0118-datasheet Description: TRANS 2PNP 60V 0.05A TO78
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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JAN2N3810U/TR JAN2N3810U/TR Microchip Technology Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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JANS2N3810 JANS2N3810 Microchip Technology Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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JANSF2N3810 JANSF2N3810 Microchip Technology Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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JANS2N3810U/TR JANS2N3810U/TR Microchip Technology Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/336
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JANKCAR2N3810 Microchip Technology Description: TRANSISTOR RH SMALL-SIGNAL BJT
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JANS2N3810U Microchip Technology Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/336
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JANKCA2N3810 Microchip Technology 14809-military-qualified-die-chip Description: TRANSISTOR SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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JANSM2N3810U/TR JANSM2N3810U/TR Microchip Technology Description: TRANSISTOR DUAL RH SMALL-SIGNAL
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/336
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JANSR2N3810 JANSR2N3810 Microchip Technology Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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2N3810U/TR 2N3810U/TR Microchip Technology Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
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JANS2N3810L JANS2N3810L Microchip Technology Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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JANSF2N3810L JANSF2N3810L Microchip Technology Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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JANSF2N3810U Microchip Technology Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/336
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JANHCA2N3810 Microchip Technology 14809-military-qualified-die-chip Description: TRANSISTOR SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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JANSP2N3810U/TR JANSP2N3810U/TR Microchip Technology Description: TRANSISTOR DUAL RH SMALL-SIGNAL
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/336
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JANSL2N3810U/TR JANSL2N3810U/TR Microchip Technology Description: TRANSISTOR DUAL RH SMALL-SIGNAL
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/336
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MNS2N3810U/TR Microchip Technology Description: DUAL SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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MNS2N3810UP/TR Microchip Technology Description: DUAL SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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MNS2N3810UP Microchip Technology Description: DUAL SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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2N2060 2N2060 Microchip Technology 2N2060(L).PDF Description: TRANS 2NPN 60V 500MA TO-78-6
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 600mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: TO-78-6
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JANTX2N2060 JANTX2N2060 Microchip Technology 2N2060(L).PDF Description: TRANS 2NPN 60V 500MA TO-78-6
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 600mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/270
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JAN2N2060 JAN2N2060 Microchip Technology 2N2060(L).PDF Description: TRANS 2NPN 60V 500MA TO-78-6
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 600mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/270
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ATR4251-PFQY 19 ATR4251-PFQY 19 Microchip Technology ATR4251_Rev09.pdf Description: IC RF AMP BROADCAST RADIO 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: AM, FM
RF Type: Broadcast Radio
Voltage - Supply: 8V ~ 11V
Gain: 6dB
Current - Supply: 11mA ~ 17mA
Noise Figure: 2.8dB
Supplier Device Package: 24-QFN (4x4)
Part Status: Obsolete
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ATR4251-PFQY 19 ATR4251-PFQY 19 Microchip Technology ATR4251_Rev09.pdf Description: IC RF AMP BROADCAST RADIO 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: AM, FM
RF Type: Broadcast Radio
Voltage - Supply: 8V ~ 11V
Gain: 6dB
Current - Supply: 11mA ~ 17mA
Noise Figure: 2.8dB
Supplier Device Package: 24-QFN (4x4)
Part Status: Obsolete
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MIC2077-2YM-TR mic2027.pdf
MIC2077-2YM-TR
Виробник: Microchip Technology
Description: IC PWR SWITCH N-CH 2X1:2 16SOIC
Features: Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 100mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 2 x 1:2
Supplier Device Package: 16-SOIC
Fault Protection: Current Limiting (Fixed), Over Temperature, UVLO
Part Status: Active
на замовлення 2892 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+265.70 грн
25+212.79 грн
100+194.61 грн
Мінімальне замовлення: 2
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MIC33M350YMP-TRVAO
Виробник: Microchip Technology
Description: IC REG BUCK SELECTABLE 3A 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Output Type: Selectable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 1.2MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 24-QFN (3x4.5)
Synchronous Rectifier: No
Voltage - Input (Min): 2.4V
Voltage - Output (Min/Fixed): 0.6V, 0.8V, 0.9V, 1V, 1.2V, 1.5V, 1.8V, 2.5V, 3.3V
Part Status: Active
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MXL15KP220CA 9460-rf01011-m15kp-rev-e
MXL15KP220CA
Виробник: Microchip Technology
Description: TVS DIODE 220VWM 356VC CASE 5A
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MX15KP220CAe3 9460-rf01011-m15kp-rev-e
MX15KP220CAe3
Виробник: Microchip Technology
Description: TVS DIODE 220VWM 356VC CASE 5A
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MA15KP220CA 9460-rf01011-m15kp-rev-e
MA15KP220CA
Виробник: Microchip Technology
Description: TVS DIODE 220VWM 356VC DO204AR
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MX15KP220CA 9460-rf01011-m15kp-rev-e
MX15KP220CA
Виробник: Microchip Technology
Description: TVS DIODE 220VWM 356VC CASE 5A
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MXL15KP220CAe3 9460-rf01011-m15kp-rev-e
MXL15KP220CAe3
Виробник: Microchip Technology
Description: TVS DIODE 220VWM 356VC CASE 5A
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M15KP220CAe3 9460-rf01011-m15kp-rev-e
M15KP220CAe3
Виробник: Microchip Technology
Description: TVS DIODE 220VWM 356VC DO204AR
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MA15KP220CAe3 9460-rf01011-m15kp-rev-e
MA15KP220CAe3
Виробник: Microchip Technology
Description: TVS DIODE 220VWM 356VC DO204AR
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DSC1001DL1-050.0000T MCHP-S-A0003587227-1.pdf?t.download=true&u=5oefqw
Виробник: Microchip Technology
Description: MEMS OSC XO 50.0000MHZ CMOS SMD
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DSC1001DL2-049.5000 MCHP-S-A0003587227-1.pdf?t.download=true&u=5oefqw
DSC1001DL2-049.5000
Виробник: Microchip Technology
Description: MEMS OSC XO 49.5000MHZ CMOS SMD
Packaging: Tube
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 7.2mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 49.5 MHz
Base Resonator: MEMS
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DSA1001DL3-100.0000VAO DSA1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-for-Automotive-DS20005889B.pdf
DSA1001DL3-100.0000VAO
Виробник: Microchip Technology
Description: MEMS OSC AUTO LP -40C-105C 20PPM
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DSA1001DL3-030.0000VAO DSA1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-for-Automotive-DS20005889B.pdf
DSA1001DL3-030.0000VAO
Виробник: Microchip Technology
Description: MEMS OSC., AUTOMOTIVE, LOW POWER
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DSC1001DL1-007.3728 DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
DSC1001DL1-007.3728
Виробник: Microchip Technology
Description: MEMS OSC XO 7.3728MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.7V ~ 3.6V
Current - Supply (Max): 8mA
Supplier Device Package: 4-CDFN (2.5x2)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 7.3728 MHz
Base Resonator: MEMS
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+53.65 грн
10+50.68 грн
50+49.89 грн
Мінімальне замовлення: 7
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DSA1001DL3-080.0000TVAO DSA1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-for-Automotive-DS20005889B.pdf
DSA1001DL3-080.0000TVAO
Виробник: Microchip Technology
Description: OSC MEMS -40C-85C, 50PPM, 2.5X2.
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DSC1001DL1-004.0000 MCHP-S-A0003587227-1.pdf?t.download=true&u=5oefqw
Виробник: Microchip Technology
Description: MEMS OSC XO 4.0000MHZ CMOS SMD
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DSA1001DL1-012.0000VAO DSA1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-for-Automotive-DS20005889B.pdf
DSA1001DL1-012.0000VAO
Виробник: Microchip Technology
Description: MEMS OSC., AUTOMOTIVE, LOW POWER
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DSA1001DL2-048.0000TVAO DSA1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-for-Automotive-DS20005889B.pdf
DSA1001DL2-048.0000TVAO
Виробник: Microchip Technology
Description: MEMS OSC AUTO LP -40C-105C 25PPM
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DSA1001DL3-030.0000TVAO filehandler.aspx?ddocname=en605035
DSA1001DL3-030.0000TVAO
Виробник: Microchip Technology
Description: MEMS OSC., AUTOMOTIVE, LOW POWER
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DSA1001DL2-024.5640VAO DSA1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-for-Automotive-DS20005889B.pdf
DSA1001DL2-024.5640VAO
Виробник: Microchip Technology
Description: MEMS OSC AUTO LP -40C-105C 25PPM
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DSA1001DL1-012.0000TVAO filehandler.aspx?ddocname=en605035
DSA1001DL1-012.0000TVAO
Виробник: Microchip Technology
Description: MEMS OSC., AUTOMOTIVE, LOW POWER
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ATSAMR21G16A-MF ATSAMR21E_G_Prelim_Summary_7-15-14.pdf
ATSAMR21G16A-MF
Виробник: Microchip Technology
Description: IC RF TXRX+MCU ISM>1GHZ 48VFQFN
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ATSAMR21G17A-MF ATSAMR21E_G_Prelim_Summary_7-15-14.pdf
ATSAMR21G17A-MF
Виробник: Microchip Technology
Description: IC RF TXRX+MCU ISM>1GHZ 48VFQFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Sensitivity: -99dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 4dBm
Current - Receiving: 11.3mA ~ 11.8mA
Data Rate (Max): 250kbps
Current - Transmitting: 7.2mA ~ 13.8mA
Supplier Device Package: 48-QFN (7x7)
GPIO: 28
Modulation: O-QPSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: I²C, SPI, UART, USART, USB
DigiKey Programmable: Not Verified
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ATSAMR21G16A-MFT ATSAMR21E_G_Prelim_Summary_7-15-14.pdf
ATSAMR21G16A-MFT
Виробник: Microchip Technology
Description: IC RF TXRX+MCU ISM>1GHZ 48VFQFN
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ATSAMR21G16A-MFT ATSAMR21E_G_Prelim_Summary_7-15-14.pdf
ATSAMR21G16A-MFT
Виробник: Microchip Technology
Description: IC RF TXRX+MCU ISM>1GHZ 48VFQFN
на замовлення 3930 шт:
термін постачання 21-31 дні (днів)
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ATSAMR21G17A-MFT ATSAMR21E_G_Prelim_Summary_7-15-14.pdf
ATSAMR21G17A-MFT
Виробник: Microchip Technology
Description: IC RF TXRX+MCU ISM>1GHZ 48VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Sensitivity: -99dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 4dBm
Current - Receiving: 11.3mA ~ 11.8mA
Data Rate (Max): 250kbps
Current - Transmitting: 7.2mA ~ 13.8mA
Supplier Device Package: 48-QFN (7x7)
GPIO: 28
Modulation: O-QPSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: I²C, SPI, UART, USART, USB
DigiKey Programmable: Not Verified
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ATSAMR21G17A-MFT ATSAMR21E_G_Prelim_Summary_7-15-14.pdf
ATSAMR21G17A-MFT
Виробник: Microchip Technology
Description: IC RF TXRX+MCU ISM>1GHZ 48VFQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Sensitivity: -99dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 4dBm
Current - Receiving: 11.3mA ~ 11.8mA
Data Rate (Max): 250kbps
Current - Transmitting: 7.2mA ~ 13.8mA
Supplier Device Package: 48-QFN (7x7)
GPIO: 28
Modulation: O-QPSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: I²C, SPI, UART, USART, USB
DigiKey Programmable: Not Verified
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MIC2012PZMTR MCRLS03410-1.pdf?t.download=true&u=5oefqw
Виробник: Microchip Technology
Description: USB POWER CONTROLLER
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Function: Controller
Interface: USB
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Supply: 22µA
Protocol: USB
Supplier Device Package: 8-SOIC
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
238+107.30 грн
Мінімальне замовлення: 238
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MIC2015-0.8YMLTR MCRLS04133-1.pdf?t.download=true&u=5oefqw
MIC2015-0.8YMLTR
Виробник: Microchip Technology
Description: FIXED CURRENT LIMIT POWER DISTRI
Features: Slew Rate Controlled
Packaging: Bulk
Package / Case: 6-VDFN Exposed Pad, 6-MLF®
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 2.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.1A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-MLF® (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Part Status: Active
на замовлення 2301 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1110+22.99 грн
Мінімальне замовлення: 1110
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MIC2013-0.5YMLTR MCRLS04133-1.pdf?t.download=true&u=5oefqw
MIC2013-0.5YMLTR
Виробник: Microchip Technology
Description: CURRENT LIMITING CIRCUIT PROTECT
Packaging: Bulk
Package / Case: 6-VDFN Exposed Pad, 6-MLF®
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 2.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.1A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-MLF® (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Part Status: Active
на замовлення 4085 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1110+21.51 грн
Мінімальне замовлення: 1110
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JANTX2N3810U 8931-lds-0118-datasheet
Виробник: Microchip Technology
Description: TRANS 2PNP 60V 0.05A
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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JANSR2N3810U
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Tray
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 100µA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/336
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JANSR2N3810U/TR
JANSR2N3810U/TR
Виробник: Microchip Technology
Description: TRANSISTOR DUAL RH SMALL-SIGNAL
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 100µA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/336
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JANTXV2N3810U/TR
JANTXV2N3810U/TR
Виробник: Microchip Technology
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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JANTX2N3810U/TR
JANTX2N3810U/TR
Виробник: Microchip Technology
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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JAN2N3810 8931-lds-0118-datasheet
Виробник: Microchip Technology
Description: TRANS 2PNP 60V 0.05A TO78
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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JAN2N3810U/TR
JAN2N3810U/TR
Виробник: Microchip Technology
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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JANS2N3810
JANS2N3810
Виробник: Microchip Technology
Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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JANSF2N3810
JANSF2N3810
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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JANS2N3810U/TR
JANS2N3810U/TR
Виробник: Microchip Technology
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/336
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JANKCAR2N3810
Виробник: Microchip Technology
Description: TRANSISTOR RH SMALL-SIGNAL BJT
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JANS2N3810U
Виробник: Microchip Technology
Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/336
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JANKCA2N3810 14809-military-qualified-die-chip
Виробник: Microchip Technology
Description: TRANSISTOR SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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JANSM2N3810U/TR
JANSM2N3810U/TR
Виробник: Microchip Technology
Description: TRANSISTOR DUAL RH SMALL-SIGNAL
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/336
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JANSR2N3810
JANSR2N3810
Виробник: Microchip Technology
Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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2N3810U/TR
2N3810U/TR
Виробник: Microchip Technology
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
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JANS2N3810L
JANS2N3810L
Виробник: Microchip Technology
Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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JANSF2N3810L
JANSF2N3810L
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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JANSF2N3810U
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/336
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JANHCA2N3810 14809-military-qualified-die-chip
Виробник: Microchip Technology
Description: TRANSISTOR SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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JANSP2N3810U/TR
JANSP2N3810U/TR
Виробник: Microchip Technology
Description: TRANSISTOR DUAL RH SMALL-SIGNAL
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/336
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JANSL2N3810U/TR
JANSL2N3810U/TR
Виробник: Microchip Technology
Description: TRANSISTOR DUAL RH SMALL-SIGNAL
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/336
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MNS2N3810U/TR
Виробник: Microchip Technology
Description: DUAL SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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MNS2N3810UP/TR
Виробник: Microchip Technology
Description: DUAL SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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MNS2N3810UP
Виробник: Microchip Technology
Description: DUAL SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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2N2060 2N2060(L).PDF
2N2060
Виробник: Microchip Technology
Description: TRANS 2NPN 60V 500MA TO-78-6
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 600mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: TO-78-6
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JANTX2N2060 2N2060(L).PDF
JANTX2N2060
Виробник: Microchip Technology
Description: TRANS 2NPN 60V 500MA TO-78-6
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 600mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/270
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JAN2N2060 2N2060(L).PDF
JAN2N2060
Виробник: Microchip Technology
Description: TRANS 2NPN 60V 500MA TO-78-6
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 600mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/270
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ATR4251-PFQY 19 ATR4251_Rev09.pdf
ATR4251-PFQY 19
Виробник: Microchip Technology
Description: IC RF AMP BROADCAST RADIO 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: AM, FM
RF Type: Broadcast Radio
Voltage - Supply: 8V ~ 11V
Gain: 6dB
Current - Supply: 11mA ~ 17mA
Noise Figure: 2.8dB
Supplier Device Package: 24-QFN (4x4)
Part Status: Obsolete
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ATR4251-PFQY 19 ATR4251_Rev09.pdf
ATR4251-PFQY 19
Виробник: Microchip Technology
Description: IC RF AMP BROADCAST RADIO 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: AM, FM
RF Type: Broadcast Radio
Voltage - Supply: 8V ~ 11V
Gain: 6dB
Current - Supply: 11mA ~ 17mA
Noise Figure: 2.8dB
Supplier Device Package: 24-QFN (4x4)
Part Status: Obsolete
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