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JAN1N1126RA JAN1N1126RA Microchip Technology 1N1124A,RA,1N1126A,RA,1N1128A,RA_1N3649,R,1N3650,R.pdf Description: DIODE GEN PURP 400V DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: MIL-PRF-19500/260
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JAN1N1126A JAN1N1126A Microchip Technology 1N1124A,RA,1N1126A,RA,1N1128A,RA_1N3649,R,1N3650,R.pdf Description: DIODE GEN PURP 400V DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: MIL-PRF-19500/260
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PD-9501-10GCO/AC PD-9501-10GCO/AC Microchip Technology PD-9501-10GCO-AC-Data-Sheet.pdf Description: 1-PORT 60W 10G MIDSPAN OUTDOOR A
Packaging: Bulk
Voltage - Output: 54V
Mounting Type: Bracket Mount
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: -40°C ~ 65°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE, GS
Power (Watts) - Per Port: 60W
Compliance: IEEE802.3af, IEEE802.3at, IEEE802.3bt
Part Status: Active
Current - Output: 1.11 A
Number of Ports: 1
Standard Number: 60950-1; 62368-1
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+22268.73 грн
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PD-9601GCO/AC PD-9601GCO/AC Microchip Technology 00003999.pdf Description: 1-PORT OUTDOOR MIDSPAN 90W
Packaging: Bulk
Voltage - Output: 54V
Mounting Type: Bracket Mount
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: -40°C ~ 60°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 90W
Compliance: IEEE802.3af, IEEE802.3bt
Part Status: Active
Current - Output: 1.667 A
Number of Ports: 1
Standard Number: 60950-1
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PD-9501-10GC/AC Microchip Technology PD-9501-10GC_Datasheet.pdf Description: 1-PORT BT 60W 10G AC
Packaging: Bulk
Voltage - Output: 48V
Mounting Type: Desktop
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Data Rate: 10/100/1000 Mbps
Power (Watts) - Per Port: 60W
Compliance: IEEE802.3at
Current - Output: 1.25 A
Number of Ports: 1
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PD-9506GC/AC-AU Microchip Technology 1244404-pd-95xxgc-family-datasheet-sep23-2019 Description: 6-PORT BT 60W NMS AU CORD
Packaging: Bulk
Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm)
Voltage - Output: 55V
Mounting Type: Rack Mount
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 60W
Compliance: IEEE802.3af, IEEE802.3at, IEEE802.3bt
Current - Output: 1.1 A
Number of Ports: 6
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PD-9512GC/AC-US PD-9512GC/AC-US Microchip Technology 1244404-pd-95xxgc-family-datasheet-sep23-2019 Description: 12-PORT BT 60W NMS US CORD
Packaging: Bulk
Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm)
Voltage - Output: 55V
Mounting Type: Rack Mount
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 60W
Compliance: IEEE802.3af, IEEE802.3at, IEEE802.3bt
Part Status: Active
Current - Output: 1.1 A
Number of Ports: 12
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+159186.16 грн
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ATSAM4N16CA-CUR ATSAM4N16CA-CUR Microchip Technology Atmel-11158-32-bit%20Cortex-M4-Microcontroller-SAM4N16-SAM4N8_Datasheet.pdf Description: IC MCU 32BIT 1MB FLASH 100TFBGA
Packaging: Cut Tape (CT)
Package / Case: 100-TFBGA
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 17x10b; D/A 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 100-TFBGA (9x9)
Number of I/O: 79
DigiKey Programmable: Not Verified
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DSC6003JI2B-250K000 DSC6003JI2B-250K000 Microchip Technology DSC60xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006133.pdf Description: MEMS OSC XO 250.0000KHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Current - Supply (Max): 1.3mA (Typ)
Supplier Device Package: 4-VLGA (2.5x2)
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Active
Frequency: 250 kHz
Base Resonator: MEMS
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DSC6112HI2B-250K000T Microchip Technology DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155A.pdf Description: MEMS OSC LVCMOS 25PPM 1.6X1.2MM
Packaging: Tape & Reel (TR)
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Active
Frequency: 250 kHz
Base Resonator: MEMS
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DSC6111HI2B-250K000 Microchip Technology DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155A.pdf Description: MEMS OSC LVCMOS 25PPM 1.6X1.2MM
Packaging: Bag
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Active
Frequency: 250 kHz
Base Resonator: MEMS
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DSC6111HI2B-250K000T Microchip Technology DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155A.pdf Description: MEMS OSC LVCMOS 25PPM 1.6X1.2MM
Packaging: Tape & Reel (TR)
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Active
Frequency: 250 kHz
Base Resonator: MEMS
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DSC6112HI2B-250K000 Microchip Technology DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155A.pdf Description: MEMS OSC LVCMOS 25PPM 1.6X1.2MM
Packaging: Bag
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Active
Frequency: 250 kHz
Base Resonator: MEMS
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QT110-S QT110-S Microchip Technology QT110(H).pdf Description: IC SCREEN CNTRL 14BIT 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: Serial
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.5V, 3.3V, 5V
Resolution (Bits): 14 b
Supplier Device Package: 8-SO
Voltage Reference: Internal
Touchscreen: 2 Wire Capacitive
Current - Supply: 20 µA
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E110 Microchip Technology E11x%20Users%20Guide.pdf Description: BOARD EVAL FOR QT110 TOUCH SENSR
Contents: Board(s)
Supplied Contents: Board(s)
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MSMCJLCE22A MSMCJLCE22A Microchip Technology 10562-msmclce-datasheet Description: TVS DIODE 22VWM 35.5VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 42A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
на замовлення 270 шт:
термін постачання 21-31 дні (днів)
1+350.19 грн
В кошику  од. на суму  грн.
AT93C46-10TU-2.7-T AT93C46-10TU-2.7-T Microchip Technology AT93C46%2C56%2C66.pdf Description: IC EEPROM 1KBIT 3-WIRE 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 10ms
Memory Interface: 3-Wire Serial
Memory Organization: 128 x 8, 64 x 16
DigiKey Programmable: Not Verified
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PIC32MZ2064DAA169T-I/HF PIC32MZ2064DAA169T-I/HF Microchip Technology PIC32MZ-Graphics-DA-Family-Data-Sheet-DS60001361J.pdf Description: IC MCU 32BIT 2MB FLASH 169LFBGA
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PIC32MZ2064DAA169T-I/HF PIC32MZ2064DAA169T-I/HF Microchip Technology PIC32MZ-Graphics-DA-Family-Data-Sheet-DS60001361J.pdf Description: IC MCU 32BIT 2MB FLASH 169LFBGA
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PIC32MZ2025DAA288T-I/4J PIC32MZ2025DAA288T-I/4J Microchip Technology PIC32MZ-Graphics-DA-Family-Data-Sheet-DS60001361J.pdf Description: IC MCU 32BIT 2MB FLASH 288LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 288-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Supplier Device Package: 288-LFBGA (15x15)
Part Status: Active
Number of I/O: 120
DigiKey Programmable: Not Verified
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PIC32MZ2025DAA288T-I/4J PIC32MZ2025DAA288T-I/4J Microchip Technology PIC32MZ-Graphics-DA-Family-Data-Sheet-DS60001361J.pdf Description: IC MCU 32BIT 2MB FLASH 288LFBGA
Packaging: Cut Tape (CT)
Package / Case: 288-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Supplier Device Package: 288-LFBGA (15x15)
Part Status: Active
Number of I/O: 120
DigiKey Programmable: Not Verified
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
1+1421.75 грн
25+1254.53 грн
100+1136.80 грн
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PIC32MZ2064DAA288T-I/4J PIC32MZ2064DAA288T-I/4J Microchip Technology PIC32MZ-Graphics-DA-Family-Data-Sheet-DS60001361J.pdf Description: IC MCU 32BIT 2MB FLASH 288LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 288-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Supplier Device Package: 288-LFBGA (15x15)
Number of I/O: 120
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+1316.57 грн
Мінімальне замовлення: 1000
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PIC32MZ2064DAA288T-I/4J PIC32MZ2064DAA288T-I/4J Microchip Technology PIC32MZ-Graphics-DA-Family-Data-Sheet-DS60001361J.pdf Description: IC MCU 32BIT 2MB FLASH 288LFBGA
Packaging: Cut Tape (CT)
Package / Case: 288-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Supplier Device Package: 288-LFBGA (15x15)
Number of I/O: 120
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1+1586.36 грн
25+1400.55 грн
100+1267.81 грн
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PIC32MZ2025DAL176-V/2J PIC32MZ2025DAL176-V/2J Microchip Technology PIC32MZ-DA-Family-DataSheet-DS60001565C.pdf Description: IC MCU 32BIT 2MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 1.9V
Connectivity: CANbus, EBI/EMI, Ethernet, I²C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I²S, POR, PWM, WDT
Supplier Device Package: 176-LQFP (20x20)
Part Status: Active
Number of I/O: 120
DigiKey Programmable: Not Verified
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
1+1550.86 грн
25+1370.12 грн
100+1239.22 грн
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PIC32MZ2064DAA169-I/HF PIC32MZ2064DAA169-I/HF Microchip Technology PIC32MZ-Graphics-DA-Family-Data-Sheet-DS60001361J.pdf Description: IC MCU 32BIT 2MB FLASH 169LFBGA
Packaging: Tray
Package / Case: 169-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Supplier Device Package: 169-LFBGA (11x11)
Number of I/O: 120
DigiKey Programmable: Not Verified
на замовлення 328 шт:
термін постачання 21-31 дні (днів)
1+1458.87 грн
25+1287.41 грн
100+1165.16 грн
В кошику  од. на суму  грн.
PIC32MZ2064DAB169-I/HF PIC32MZ2064DAB169-I/HF Microchip Technology PIC32MZ-Graphics-DA-Family-Data-Sheet-DS60001361J.pdf Description: IC MCU 32BIT 2MB FLASH 169LFBGA
Packaging: Tray
Package / Case: 169-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I²C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I²S, POR, PWM, WDT
Supplier Device Package: 169-LFBGA (11x11)
Part Status: Active
Number of I/O: 120
DigiKey Programmable: Not Verified
на замовлення 154 шт:
термін постачання 21-31 дні (днів)
1+1678.34 грн
25+1479.99 грн
100+1370.65 грн
В кошику  од. на суму  грн.
JANTX1N5553US/TR JANTX1N5553US/TR Microchip Technology Description: DIODE GEN PURP 800V 3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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JAN1N5553US/TR JAN1N5553US/TR Microchip Technology Description: DIODE GEN PURP 800V 3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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JAN1N5553/TR JAN1N5553/TR Microchip Technology 11519-lds-0230-datasheet Description: DIODE GEN PURP 800V 3A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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JANS1N5553US JANS1N5553US Microchip Technology Description: DIODE GEN PURP 800V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
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JANTXV1N5553/TR JANTXV1N5553/TR Microchip Technology 11519-lds-0230-datasheet Description: DIODE GEN PURP 800V 5A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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JANTX1N5553/TR JANTX1N5553/TR Microchip Technology 11519-lds-0230-datasheet Description: DIODE GEN PURP 800V 5A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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JANS1N5553/TR JANS1N5553/TR Microchip Technology 11519-lds-0230-datasheet Description: DIODE GEN PURP 800V 5A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
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JANTXV1N5553US/TR JANTXV1N5553US/TR Microchip Technology Description: DIODE GEN PURP 800V 3A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
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JANS1N5553 JANS1N5553 Microchip Technology Description: DIODE GEN PURP 800V 5A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
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JANTXV1N5553US JANTXV1N5553US Microchip Technology vleUsHb68.FCDqQHUe4L8QjGXawM1c89FiGabW6AFo8 Description: DIODE GEN PURP 800V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
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1N5553US/TR 1N5553US/TR Microchip Technology 10966-sa7-43-datasheet Description: STD RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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1N5553/TR 1N5553/TR Microchip Technology 11519-lds-0230-datasheet Description: STD RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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MSMBG100CA MSMBG100CA Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 100VWM 162VC SMBG
Packaging: Bulk
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AA (SMBG)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MASMBG100CAe3 MASMBG100CAe3 Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 100VWM 162VC SMBG
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MXLSMBG100A MXLSMBG100A Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 100VWM 162VC SMBG
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MASMBG100CA MASMBG100CA Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 100VWM 162VC SMBG
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MSMBG100Ae3 MSMBG100Ae3 Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 100VWM 162VC SMBG
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MXLSMBG100Ae3 MXLSMBG100Ae3 Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 100VWM 162VC SMBG
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PD-9512GC/AC-AU Microchip Technology 1244404-pd-95xxgc-family-datasheet-sep23-2019 Description: 12-PORT BT 60W NMS AU CORD
Packaging: Bulk
Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm)
Voltage - Output: 55V
Mounting Type: Rack Mount
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 60W
Compliance: IEEE802.3af, IEEE802.3at, IEEE802.3bt
Current - Output: 1.1 A
Number of Ports: 12
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MA15KP28CA MA15KP28CA Microchip Technology 9460-rf01011-m15kp-rev-e Description: TVS DIODE 28VWM 47.5VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 316A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 47.5V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Part Status: Active
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MXSMBG28A MXSMBG28A Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 28VWM 45.4VC SMBG
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MXRT100KP58Ae3 MXRT100KP58Ae3 Microchip Technology 77294-mrt100kp-pdf Description: TVS DIODE 58VWM 114VC CASE 5A
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MXSMBG100A MXSMBG100A Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 100VWM 162VC SMBG
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CD978B CD978B Microchip Technology 8385-cd957b-cd986b-datasheet Description: VOLTAGE REGULATOR
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PIC32MZ1024EFK100-E/PF PIC32MZ1024EFK100-E/PF Microchip Technology PIC32MZ-Embedded-Connectivity-with-Floating-Point-Unit-Family-Silicon-Errata-DS80000663.pdf Description: IC MCU 32BIT 1MB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-TQFP
Mounting Type: Surface Mount
Speed: 180MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® M-Class
Data Converters: A/D 40x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.1V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Grade: Automotive
Number of I/O: 78
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 102 шт:
термін постачання 21-31 дні (днів)
1+1135.30 грн
25+1002.31 грн
100+907.49 грн
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JAN1N5188/TR JAN1N5188/TR Microchip Technology 11517-lds-0216-datasheet Description: DIODE STANDARD 400V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Grade: Military
Qualification: MIL-PRF-19500/424
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JAN1N5187/TR JAN1N5187/TR Microchip Technology 11517-lds-0216-datasheet Description: DIODE STANDARD 200V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Grade: Military
Qualification: MIL-PRF-19500/424
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JANTX1N5187/TR JANTX1N5187/TR Microchip Technology 11517-lds-0216-datasheet Description: DIODE STANDARD 200V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Grade: Military
Qualification: MIL-PRF-19500/424
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JANTXV1N5186/TR JANTXV1N5186/TR Microchip Technology 11517-lds-0216-datasheet Description: DIODE STANDARD 100V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Grade: Military
Qualification: MIL-PRF-19500/424
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1N5189/TR 1N5189/TR Microchip Technology Description: DIODE STANDARD 500V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
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1N5188/TR 1N5188/TR Microchip Technology 11517-lds-0216-datasheet Description: DIODE STANDARD 400V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
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JANTX1N5186/TR JANTX1N5186/TR Microchip Technology 11517-lds-0216-datasheet Description: DIODE STANDARD 100V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Grade: Military
Qualification: MIL-PRF-19500/424
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JANTXV1N5187/TR JANTXV1N5187/TR Microchip Technology 11517-lds-0216-datasheet Description: DIODE STANDARD 100V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Grade: Military
Qualification: MIL-PRF-19500/424
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JAN1N5186/TR JAN1N5186/TR Microchip Technology 11517-lds-0216-datasheet Description: DIODE STANDARD 100V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Grade: Military
Qualification: MIL-PRF-19500/424
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JAN1N1126RA 1N1124A,RA,1N1126A,RA,1N1128A,RA_1N3649,R,1N3650,R.pdf
JAN1N1126RA
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: MIL-PRF-19500/260
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JAN1N1126A 1N1124A,RA,1N1126A,RA,1N1128A,RA_1N3649,R,1N3650,R.pdf
JAN1N1126A
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: MIL-PRF-19500/260
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PD-9501-10GCO/AC PD-9501-10GCO-AC-Data-Sheet.pdf
PD-9501-10GCO/AC
Виробник: Microchip Technology
Description: 1-PORT 60W 10G MIDSPAN OUTDOOR A
Packaging: Bulk
Voltage - Output: 54V
Mounting Type: Bracket Mount
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: -40°C ~ 65°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE, GS
Power (Watts) - Per Port: 60W
Compliance: IEEE802.3af, IEEE802.3at, IEEE802.3bt
Part Status: Active
Current - Output: 1.11 A
Number of Ports: 1
Standard Number: 60950-1; 62368-1
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+22268.73 грн
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PD-9601GCO/AC 00003999.pdf
PD-9601GCO/AC
Виробник: Microchip Technology
Description: 1-PORT OUTDOOR MIDSPAN 90W
Packaging: Bulk
Voltage - Output: 54V
Mounting Type: Bracket Mount
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: -40°C ~ 60°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 90W
Compliance: IEEE802.3af, IEEE802.3bt
Part Status: Active
Current - Output: 1.667 A
Number of Ports: 1
Standard Number: 60950-1
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PD-9501-10GC/AC PD-9501-10GC_Datasheet.pdf
Виробник: Microchip Technology
Description: 1-PORT BT 60W 10G AC
Packaging: Bulk
Voltage - Output: 48V
Mounting Type: Desktop
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Data Rate: 10/100/1000 Mbps
Power (Watts) - Per Port: 60W
Compliance: IEEE802.3at
Current - Output: 1.25 A
Number of Ports: 1
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PD-9506GC/AC-AU 1244404-pd-95xxgc-family-datasheet-sep23-2019
Виробник: Microchip Technology
Description: 6-PORT BT 60W NMS AU CORD
Packaging: Bulk
Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm)
Voltage - Output: 55V
Mounting Type: Rack Mount
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 60W
Compliance: IEEE802.3af, IEEE802.3at, IEEE802.3bt
Current - Output: 1.1 A
Number of Ports: 6
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PD-9512GC/AC-US 1244404-pd-95xxgc-family-datasheet-sep23-2019
PD-9512GC/AC-US
Виробник: Microchip Technology
Description: 12-PORT BT 60W NMS US CORD
Packaging: Bulk
Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm)
Voltage - Output: 55V
Mounting Type: Rack Mount
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 60W
Compliance: IEEE802.3af, IEEE802.3at, IEEE802.3bt
Part Status: Active
Current - Output: 1.1 A
Number of Ports: 12
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+159186.16 грн
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ATSAM4N16CA-CUR Atmel-11158-32-bit%20Cortex-M4-Microcontroller-SAM4N16-SAM4N8_Datasheet.pdf
ATSAM4N16CA-CUR
Виробник: Microchip Technology
Description: IC MCU 32BIT 1MB FLASH 100TFBGA
Packaging: Cut Tape (CT)
Package / Case: 100-TFBGA
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 17x10b; D/A 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 100-TFBGA (9x9)
Number of I/O: 79
DigiKey Programmable: Not Verified
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DSC6003JI2B-250K000 DSC60xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006133.pdf
DSC6003JI2B-250K000
Виробник: Microchip Technology
Description: MEMS OSC XO 250.0000KHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Current - Supply (Max): 1.3mA (Typ)
Supplier Device Package: 4-VLGA (2.5x2)
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Active
Frequency: 250 kHz
Base Resonator: MEMS
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DSC6112HI2B-250K000T DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155A.pdf
Виробник: Microchip Technology
Description: MEMS OSC LVCMOS 25PPM 1.6X1.2MM
Packaging: Tape & Reel (TR)
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Active
Frequency: 250 kHz
Base Resonator: MEMS
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DSC6111HI2B-250K000 DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155A.pdf
Виробник: Microchip Technology
Description: MEMS OSC LVCMOS 25PPM 1.6X1.2MM
Packaging: Bag
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Active
Frequency: 250 kHz
Base Resonator: MEMS
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DSC6111HI2B-250K000T DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155A.pdf
Виробник: Microchip Technology
Description: MEMS OSC LVCMOS 25PPM 1.6X1.2MM
Packaging: Tape & Reel (TR)
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Active
Frequency: 250 kHz
Base Resonator: MEMS
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DSC6112HI2B-250K000 DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155A.pdf
Виробник: Microchip Technology
Description: MEMS OSC LVCMOS 25PPM 1.6X1.2MM
Packaging: Bag
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Active
Frequency: 250 kHz
Base Resonator: MEMS
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QT110-S QT110(H).pdf
QT110-S
Виробник: Microchip Technology
Description: IC SCREEN CNTRL 14BIT 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: Serial
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.5V, 3.3V, 5V
Resolution (Bits): 14 b
Supplier Device Package: 8-SO
Voltage Reference: Internal
Touchscreen: 2 Wire Capacitive
Current - Supply: 20 µA
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E110 E11x%20Users%20Guide.pdf
Виробник: Microchip Technology
Description: BOARD EVAL FOR QT110 TOUCH SENSR
Contents: Board(s)
Supplied Contents: Board(s)
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MSMCJLCE22A 10562-msmclce-datasheet
MSMCJLCE22A
Виробник: Microchip Technology
Description: TVS DIODE 22VWM 35.5VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 42A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
на замовлення 270 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+350.19 грн
В кошику  од. на суму  грн.
AT93C46-10TU-2.7-T AT93C46%2C56%2C66.pdf
AT93C46-10TU-2.7-T
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT 3-WIRE 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 10ms
Memory Interface: 3-Wire Serial
Memory Organization: 128 x 8, 64 x 16
DigiKey Programmable: Not Verified
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PIC32MZ2064DAA169T-I/HF PIC32MZ-Graphics-DA-Family-Data-Sheet-DS60001361J.pdf
PIC32MZ2064DAA169T-I/HF
Виробник: Microchip Technology
Description: IC MCU 32BIT 2MB FLASH 169LFBGA
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PIC32MZ2064DAA169T-I/HF PIC32MZ-Graphics-DA-Family-Data-Sheet-DS60001361J.pdf
PIC32MZ2064DAA169T-I/HF
Виробник: Microchip Technology
Description: IC MCU 32BIT 2MB FLASH 169LFBGA
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PIC32MZ2025DAA288T-I/4J PIC32MZ-Graphics-DA-Family-Data-Sheet-DS60001361J.pdf
PIC32MZ2025DAA288T-I/4J
Виробник: Microchip Technology
Description: IC MCU 32BIT 2MB FLASH 288LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 288-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Supplier Device Package: 288-LFBGA (15x15)
Part Status: Active
Number of I/O: 120
DigiKey Programmable: Not Verified
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PIC32MZ2025DAA288T-I/4J PIC32MZ-Graphics-DA-Family-Data-Sheet-DS60001361J.pdf
PIC32MZ2025DAA288T-I/4J
Виробник: Microchip Technology
Description: IC MCU 32BIT 2MB FLASH 288LFBGA
Packaging: Cut Tape (CT)
Package / Case: 288-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Supplier Device Package: 288-LFBGA (15x15)
Part Status: Active
Number of I/O: 120
DigiKey Programmable: Not Verified
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1421.75 грн
25+1254.53 грн
100+1136.80 грн
В кошику  од. на суму  грн.
PIC32MZ2064DAA288T-I/4J PIC32MZ-Graphics-DA-Family-Data-Sheet-DS60001361J.pdf
PIC32MZ2064DAA288T-I/4J
Виробник: Microchip Technology
Description: IC MCU 32BIT 2MB FLASH 288LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 288-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Supplier Device Package: 288-LFBGA (15x15)
Number of I/O: 120
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+1316.57 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
PIC32MZ2064DAA288T-I/4J PIC32MZ-Graphics-DA-Family-Data-Sheet-DS60001361J.pdf
PIC32MZ2064DAA288T-I/4J
Виробник: Microchip Technology
Description: IC MCU 32BIT 2MB FLASH 288LFBGA
Packaging: Cut Tape (CT)
Package / Case: 288-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Supplier Device Package: 288-LFBGA (15x15)
Number of I/O: 120
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1586.36 грн
25+1400.55 грн
100+1267.81 грн
В кошику  од. на суму  грн.
PIC32MZ2025DAL176-V/2J PIC32MZ-DA-Family-DataSheet-DS60001565C.pdf
PIC32MZ2025DAL176-V/2J
Виробник: Microchip Technology
Description: IC MCU 32BIT 2MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 1.9V
Connectivity: CANbus, EBI/EMI, Ethernet, I²C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I²S, POR, PWM, WDT
Supplier Device Package: 176-LQFP (20x20)
Part Status: Active
Number of I/O: 120
DigiKey Programmable: Not Verified
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1550.86 грн
25+1370.12 грн
100+1239.22 грн
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PIC32MZ2064DAA169-I/HF PIC32MZ-Graphics-DA-Family-Data-Sheet-DS60001361J.pdf
PIC32MZ2064DAA169-I/HF
Виробник: Microchip Technology
Description: IC MCU 32BIT 2MB FLASH 169LFBGA
Packaging: Tray
Package / Case: 169-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Supplier Device Package: 169-LFBGA (11x11)
Number of I/O: 120
DigiKey Programmable: Not Verified
на замовлення 328 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1458.87 грн
25+1287.41 грн
100+1165.16 грн
В кошику  од. на суму  грн.
PIC32MZ2064DAB169-I/HF PIC32MZ-Graphics-DA-Family-Data-Sheet-DS60001361J.pdf
PIC32MZ2064DAB169-I/HF
Виробник: Microchip Technology
Description: IC MCU 32BIT 2MB FLASH 169LFBGA
Packaging: Tray
Package / Case: 169-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I²C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I²S, POR, PWM, WDT
Supplier Device Package: 169-LFBGA (11x11)
Part Status: Active
Number of I/O: 120
DigiKey Programmable: Not Verified
на замовлення 154 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1678.34 грн
25+1479.99 грн
100+1370.65 грн
В кошику  од. на суму  грн.
JANTX1N5553US/TR
JANTX1N5553US/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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JAN1N5553US/TR
JAN1N5553US/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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JAN1N5553/TR 11519-lds-0230-datasheet
JAN1N5553/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 3A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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JANS1N5553US
JANS1N5553US
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
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JANTXV1N5553/TR 11519-lds-0230-datasheet
JANTXV1N5553/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 5A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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JANTX1N5553/TR 11519-lds-0230-datasheet
JANTX1N5553/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 5A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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JANS1N5553/TR 11519-lds-0230-datasheet
JANS1N5553/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 5A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
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JANTXV1N5553US/TR
JANTXV1N5553US/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 3A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
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JANS1N5553
JANS1N5553
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 5A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
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JANTXV1N5553US vleUsHb68.FCDqQHUe4L8QjGXawM1c89FiGabW6AFo8
JANTXV1N5553US
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
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1N5553US/TR 10966-sa7-43-datasheet
1N5553US/TR
Виробник: Microchip Technology
Description: STD RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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1N5553/TR 11519-lds-0230-datasheet
1N5553/TR
Виробник: Microchip Technology
Description: STD RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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MSMBG100CA 10560-msmb-datasheet
MSMBG100CA
Виробник: Microchip Technology
Description: TVS DIODE 100VWM 162VC SMBG
Packaging: Bulk
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AA (SMBG)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MASMBG100CAe3 10560-msmb-datasheet
MASMBG100CAe3
Виробник: Microchip Technology
Description: TVS DIODE 100VWM 162VC SMBG
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MXLSMBG100A 10560-msmb-datasheet
MXLSMBG100A
Виробник: Microchip Technology
Description: TVS DIODE 100VWM 162VC SMBG
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MASMBG100CA 10560-msmb-datasheet
MASMBG100CA
Виробник: Microchip Technology
Description: TVS DIODE 100VWM 162VC SMBG
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MSMBG100Ae3 10560-msmb-datasheet
MSMBG100Ae3
Виробник: Microchip Technology
Description: TVS DIODE 100VWM 162VC SMBG
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MXLSMBG100Ae3 10560-msmb-datasheet
MXLSMBG100Ae3
Виробник: Microchip Technology
Description: TVS DIODE 100VWM 162VC SMBG
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PD-9512GC/AC-AU 1244404-pd-95xxgc-family-datasheet-sep23-2019
Виробник: Microchip Technology
Description: 12-PORT BT 60W NMS AU CORD
Packaging: Bulk
Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm)
Voltage - Output: 55V
Mounting Type: Rack Mount
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 60W
Compliance: IEEE802.3af, IEEE802.3at, IEEE802.3bt
Current - Output: 1.1 A
Number of Ports: 12
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MA15KP28CA 9460-rf01011-m15kp-rev-e
MA15KP28CA
Виробник: Microchip Technology
Description: TVS DIODE 28VWM 47.5VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 316A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 47.5V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Part Status: Active
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MXSMBG28A 10560-msmb-datasheet
MXSMBG28A
Виробник: Microchip Technology
Description: TVS DIODE 28VWM 45.4VC SMBG
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MXRT100KP58Ae3 77294-mrt100kp-pdf
MXRT100KP58Ae3
Виробник: Microchip Technology
Description: TVS DIODE 58VWM 114VC CASE 5A
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MXSMBG100A 10560-msmb-datasheet
MXSMBG100A
Виробник: Microchip Technology
Description: TVS DIODE 100VWM 162VC SMBG
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CD978B 8385-cd957b-cd986b-datasheet
CD978B
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
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PIC32MZ1024EFK100-E/PF PIC32MZ-Embedded-Connectivity-with-Floating-Point-Unit-Family-Silicon-Errata-DS80000663.pdf
PIC32MZ1024EFK100-E/PF
Виробник: Microchip Technology
Description: IC MCU 32BIT 1MB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-TQFP
Mounting Type: Surface Mount
Speed: 180MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® M-Class
Data Converters: A/D 40x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.1V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Grade: Automotive
Number of I/O: 78
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 102 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1135.30 грн
25+1002.31 грн
100+907.49 грн
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JAN1N5188/TR 11517-lds-0216-datasheet
JAN1N5188/TR
Виробник: Microchip Technology
Description: DIODE STANDARD 400V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Grade: Military
Qualification: MIL-PRF-19500/424
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JAN1N5187/TR 11517-lds-0216-datasheet
JAN1N5187/TR
Виробник: Microchip Technology
Description: DIODE STANDARD 200V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Grade: Military
Qualification: MIL-PRF-19500/424
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JANTX1N5187/TR 11517-lds-0216-datasheet
JANTX1N5187/TR
Виробник: Microchip Technology
Description: DIODE STANDARD 200V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Grade: Military
Qualification: MIL-PRF-19500/424
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JANTXV1N5186/TR 11517-lds-0216-datasheet
JANTXV1N5186/TR
Виробник: Microchip Technology
Description: DIODE STANDARD 100V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Grade: Military
Qualification: MIL-PRF-19500/424
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1N5189/TR
1N5189/TR
Виробник: Microchip Technology
Description: DIODE STANDARD 500V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
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1N5188/TR 11517-lds-0216-datasheet
1N5188/TR
Виробник: Microchip Technology
Description: DIODE STANDARD 400V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
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JANTX1N5186/TR 11517-lds-0216-datasheet
JANTX1N5186/TR
Виробник: Microchip Technology
Description: DIODE STANDARD 100V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Grade: Military
Qualification: MIL-PRF-19500/424
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JANTXV1N5187/TR 11517-lds-0216-datasheet
JANTXV1N5187/TR
Виробник: Microchip Technology
Description: DIODE STANDARD 100V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Grade: Military
Qualification: MIL-PRF-19500/424
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JAN1N5186/TR 11517-lds-0216-datasheet
JAN1N5186/TR
Виробник: Microchip Technology
Description: DIODE STANDARD 100V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Grade: Military
Qualification: MIL-PRF-19500/424
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