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DSA1001DL1-012.0000TVAO DSA1001DL1-012.0000TVAO Microchip Technology filehandler.aspx?ddocname=en605035 Description: MEMS OSC., AUTOMOTIVE, LOW POWER
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ATSAMR21G16A-MF ATSAMR21G16A-MF Microchip Technology ATSAMR21E_G_Prelim_Summary_7-15-14.pdf Description: IC RF TXRX+MCU ISM>1GHZ 48VFQFN
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ATSAMR21G17A-MF ATSAMR21G17A-MF Microchip Technology ATSAMR21E_G_Prelim_Summary_7-15-14.pdf Description: IC RF TXRX+MCU ISM>1GHZ 48VFQFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Sensitivity: -99dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 4dBm
Current - Receiving: 11.3mA ~ 11.8mA
Data Rate (Max): 250kbps
Current - Transmitting: 7.2mA ~ 13.8mA
Supplier Device Package: 48-QFN (7x7)
GPIO: 28
Modulation: O-QPSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: I²C, SPI, UART, USART, USB
DigiKey Programmable: Not Verified
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ATSAMR21G16A-MFT ATSAMR21G16A-MFT Microchip Technology ATSAMR21E_G_Prelim_Summary_7-15-14.pdf Description: IC RF TXRX+MCU ISM>1GHZ 48VFQFN
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ATSAMR21G16A-MFT ATSAMR21G16A-MFT Microchip Technology ATSAMR21E_G_Prelim_Summary_7-15-14.pdf Description: IC RF TXRX+MCU ISM>1GHZ 48VFQFN
на замовлення 3930 шт:
термін постачання 21-31 дні (днів)
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ATSAMR21G17A-MFT ATSAMR21G17A-MFT Microchip Technology ATSAMR21E_G_Prelim_Summary_7-15-14.pdf Description: IC RF TXRX+MCU ISM>1GHZ 48VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Sensitivity: -99dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 4dBm
Current - Receiving: 11.3mA ~ 11.8mA
Data Rate (Max): 250kbps
Current - Transmitting: 7.2mA ~ 13.8mA
Supplier Device Package: 48-QFN (7x7)
GPIO: 28
Modulation: O-QPSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: I²C, SPI, UART, USART, USB
DigiKey Programmable: Not Verified
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ATSAMR21G17A-MFT ATSAMR21G17A-MFT Microchip Technology ATSAMR21E_G_Prelim_Summary_7-15-14.pdf Description: IC RF TXRX+MCU ISM>1GHZ 48VFQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Sensitivity: -99dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 4dBm
Current - Receiving: 11.3mA ~ 11.8mA
Data Rate (Max): 250kbps
Current - Transmitting: 7.2mA ~ 13.8mA
Supplier Device Package: 48-QFN (7x7)
GPIO: 28
Modulation: O-QPSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: I²C, SPI, UART, USART, USB
DigiKey Programmable: Not Verified
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MIC2012PZMTR Microchip Technology MCRLS03410-1.pdf?t.download=true&u=5oefqw Description: USB POWER CONTROLLER
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Function: Controller
Interface: USB
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Supply: 22µA
Protocol: USB
Supplier Device Package: 8-SOIC
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
238+105.31 грн
Мінімальне замовлення: 238
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MIC2015-0.8YMLTR MIC2015-0.8YMLTR Microchip Technology MCRLS04133-1.pdf?t.download=true&u=5oefqw Description: FIXED CURRENT LIMIT POWER DISTRI
Features: Slew Rate Controlled
Packaging: Bulk
Package / Case: 6-VDFN Exposed Pad, 6-MLF®
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 2.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.1A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-MLF® (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Part Status: Active
на замовлення 2301 шт:
термін постачання 21-31 дні (днів)
1110+22.57 грн
Мінімальне замовлення: 1110
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MIC2013-0.5YMLTR MIC2013-0.5YMLTR Microchip Technology MCRLS04133-1.pdf?t.download=true&u=5oefqw Description: CURRENT LIMITING CIRCUIT PROTECT
Packaging: Bulk
Package / Case: 6-VDFN Exposed Pad, 6-MLF®
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 2.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.1A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-MLF® (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Part Status: Active
на замовлення 4085 шт:
термін постачання 21-31 дні (днів)
1110+21.11 грн
Мінімальне замовлення: 1110
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MIC2019YM6 MIC2019YM6 Microchip Technology MCRLS03642-1.pdf?t.download=true&u=5oefqw Description: ADJUSTABLE CURRENT LIMIT POWER D
Packaging: Bulk
Package / Case: SOT-23-6
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 2.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-23-6
Fault Protection: Current Limiting (Adjustable), Over Temperature
Part Status: Obsolete
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JANTX2N3810U Microchip Technology 8931-lds-0118-datasheet Description: TRANS 2PNP 60V 0.05A
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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JANSR2N3810U Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Tray
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 100µA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/336
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JANSR2N3810U/TR JANSR2N3810U/TR Microchip Technology Description: TRANSISTOR DUAL RH SMALL-SIGNAL
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 100µA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/336
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JANTXV2N3810U/TR JANTXV2N3810U/TR Microchip Technology Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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JANTX2N3810U/TR JANTX2N3810U/TR Microchip Technology Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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JAN2N3810 Microchip Technology 8931-lds-0118-datasheet Description: TRANS 2PNP 60V 0.05A TO78
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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JAN2N3810U/TR JAN2N3810U/TR Microchip Technology Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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JANS2N3810 JANS2N3810 Microchip Technology Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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JANSF2N3810 JANSF2N3810 Microchip Technology Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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JANS2N3810U/TR JANS2N3810U/TR Microchip Technology Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/336
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JANKCAR2N3810 Microchip Technology Description: TRANSISTOR RH SMALL-SIGNAL BJT
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JANS2N3810U Microchip Technology Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/336
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JANKCA2N3810 Microchip Technology 14809-military-qualified-die-chip Description: TRANSISTOR SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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JANSM2N3810U/TR JANSM2N3810U/TR Microchip Technology Description: TRANSISTOR DUAL RH SMALL-SIGNAL
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/336
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JANSR2N3810 JANSR2N3810 Microchip Technology Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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2N3810U/TR 2N3810U/TR Microchip Technology Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
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JANS2N3810L JANS2N3810L Microchip Technology Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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JANSF2N3810L JANSF2N3810L Microchip Technology Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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JANSF2N3810U Microchip Technology Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/336
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JANHCA2N3810 Microchip Technology 14809-military-qualified-die-chip Description: TRANSISTOR SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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JANSP2N3810U/TR JANSP2N3810U/TR Microchip Technology Description: TRANSISTOR DUAL RH SMALL-SIGNAL
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/336
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JANSL2N3810U/TR JANSL2N3810U/TR Microchip Technology Description: TRANSISTOR DUAL RH SMALL-SIGNAL
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/336
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MNS2N3810U/TR Microchip Technology Description: DUAL SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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MNS2N3810UP/TR Microchip Technology Description: DUAL SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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MNS2N3810UP Microchip Technology Description: DUAL SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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2N2060 2N2060 Microchip Technology Dual_Transistors_TO-78_Case.1.pdf Description: NPN TRANSISTOR
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JANTX2N2060 JANTX2N2060 Microchip Technology Description: NPN TRANSISTOR
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JAN2N2060 JAN2N2060 Microchip Technology Description: NPN LOW POWER SILICON TRANSISTOR
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ATR4251-PFQY 19 ATR4251-PFQY 19 Microchip Technology ATR4251_Rev09.pdf Description: IC RF AMP BROADCAST RADIO 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: AM, FM
RF Type: Broadcast Radio
Voltage - Supply: 8V ~ 11V
Gain: 6dB
Current - Supply: 11mA ~ 17mA
Noise Figure: 2.8dB
Supplier Device Package: 24-QFN (4x4)
Part Status: Obsolete
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ATR4251-PFQY 19 ATR4251-PFQY 19 Microchip Technology ATR4251_Rev09.pdf Description: IC RF AMP BROADCAST RADIO 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: AM, FM
RF Type: Broadcast Radio
Voltage - Supply: 8V ~ 11V
Gain: 6dB
Current - Supply: 11mA ~ 17mA
Noise Figure: 2.8dB
Supplier Device Package: 24-QFN (4x4)
Part Status: Obsolete
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JANTX1N972B-1 JANTX1N972B-1 Microchip Technology 125314-lds-0287-datasheet Description: DIODE ZENER 27V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 21 V
Qualification: MIL-PRF-19500/117
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MSCSM120DUM08T3AG MSCSM120DUM08T3AG Microchip Technology Description: MOSFET 2N-CH 1200V 337A SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1409W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 337A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 1000V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 4mA
Supplier Device Package: SP3F
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+30737.71 грн
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MSCSM120TLM08CAG MSCSM120TLM08CAG Microchip Technology Description: SIC 4N-CH 1200V 333A SP6C
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Three Level Inverter)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1378W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 333A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 1000V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 4mA
Supplier Device Package: SP6C
Part Status: Active
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+79324.95 грн
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MSCSM120DUM16T3AG Microchip Technology Description: SIC 2N-CH 1200V 173A SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 745W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 2mA
Supplier Device Package: SP3F
Part Status: Active
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MSCSM120DUM027AG Microchip Technology Description: PM-MOSFET-SIC-SP6C
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2968W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 1000V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Part Status: Active
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MSCSM120TLM16C3AG MSCSM120TLM16C3AG Microchip Technology Description: MOSFET 4N-CH 1200V 173A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Three Level Inverter)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 745W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 2mA
Supplier Device Package: SP3F
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+24085.50 грн
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MSCSM120TLM11CAG MSCSM120TLM11CAG Microchip Technology Description: SIC 4N-CH 1200V 251A SP6C
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Three Level Inverter)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1042W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Supplier Device Package: SP6C
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+63199.69 грн
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MSCSM120TLM50C3AG MSCSM120TLM50C3AG Microchip Technology 00004367A_MSCSM120TLM50C3AG.pdf Description: MOSFET 4N-CH 1200V 55A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Three Level Inverter)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 245W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: SP3F
Part Status: Active
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+8784.35 грн
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MSCSM120TLM31C3AG Microchip Technology Description: SIC 4N-CH 1200V 89A SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Three Level Inverter)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 395W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SP3F
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MSCSM120DUM11T3AG Microchip Technology Description: PM-MOSFET-SIC-SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1067W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 254A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Supplier Device Package: SP3F
Part Status: Active
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MSCSM120DUM042AG Microchip Technology Description: MOSFET 2N-CH 1200V 495A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2031W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
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MSCSM120HM063CAG Microchip Technology Description: PM-MOSFET-SIC-SBD-SP6C
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MSCSM120HM083CAG Microchip Technology Description: PM-MOSFET-SIC-SBD-SP6C
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JANTXV1N747C-1/TR JANTXV1N747C-1/TR Microchip Technology 131821-lds-0288-datasheet Description: VOLTAGE REGULATOR
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
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JANTX1N747D-1/TR JANTX1N747D-1/TR Microchip Technology 131821-lds-0288-datasheet Description: VOLTAGE REGULATOR
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
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JANTX1N747CUR-1/TR Microchip Technology Description: VOLTAGE REGULATOR
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: MIL-PRF-19500/127
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JAN1N747CUR-1/TR Microchip Technology Description: VOLTAGE REGULATOR
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: MIL-PRF-19500/127
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JAN1N747D-1/TR JAN1N747D-1/TR Microchip Technology Description: VOLTAGE REGULATOR
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
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JANTXV1N747D-1/TR JANTXV1N747D-1/TR Microchip Technology 131821-lds-0288-datasheet Description: VOLTAGE REGULATOR
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
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DSA1001DL1-012.0000TVAO filehandler.aspx?ddocname=en605035
DSA1001DL1-012.0000TVAO
Виробник: Microchip Technology
Description: MEMS OSC., AUTOMOTIVE, LOW POWER
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ATSAMR21G16A-MF ATSAMR21E_G_Prelim_Summary_7-15-14.pdf
ATSAMR21G16A-MF
Виробник: Microchip Technology
Description: IC RF TXRX+MCU ISM>1GHZ 48VFQFN
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ATSAMR21G17A-MF ATSAMR21E_G_Prelim_Summary_7-15-14.pdf
ATSAMR21G17A-MF
Виробник: Microchip Technology
Description: IC RF TXRX+MCU ISM>1GHZ 48VFQFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Sensitivity: -99dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 4dBm
Current - Receiving: 11.3mA ~ 11.8mA
Data Rate (Max): 250kbps
Current - Transmitting: 7.2mA ~ 13.8mA
Supplier Device Package: 48-QFN (7x7)
GPIO: 28
Modulation: O-QPSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: I²C, SPI, UART, USART, USB
DigiKey Programmable: Not Verified
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ATSAMR21G16A-MFT ATSAMR21E_G_Prelim_Summary_7-15-14.pdf
ATSAMR21G16A-MFT
Виробник: Microchip Technology
Description: IC RF TXRX+MCU ISM>1GHZ 48VFQFN
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ATSAMR21G16A-MFT ATSAMR21E_G_Prelim_Summary_7-15-14.pdf
ATSAMR21G16A-MFT
Виробник: Microchip Technology
Description: IC RF TXRX+MCU ISM>1GHZ 48VFQFN
на замовлення 3930 шт:
термін постачання 21-31 дні (днів)
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ATSAMR21G17A-MFT ATSAMR21E_G_Prelim_Summary_7-15-14.pdf
ATSAMR21G17A-MFT
Виробник: Microchip Technology
Description: IC RF TXRX+MCU ISM>1GHZ 48VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Sensitivity: -99dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 4dBm
Current - Receiving: 11.3mA ~ 11.8mA
Data Rate (Max): 250kbps
Current - Transmitting: 7.2mA ~ 13.8mA
Supplier Device Package: 48-QFN (7x7)
GPIO: 28
Modulation: O-QPSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: I²C, SPI, UART, USART, USB
DigiKey Programmable: Not Verified
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ATSAMR21G17A-MFT ATSAMR21E_G_Prelim_Summary_7-15-14.pdf
ATSAMR21G17A-MFT
Виробник: Microchip Technology
Description: IC RF TXRX+MCU ISM>1GHZ 48VFQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Sensitivity: -99dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 4dBm
Current - Receiving: 11.3mA ~ 11.8mA
Data Rate (Max): 250kbps
Current - Transmitting: 7.2mA ~ 13.8mA
Supplier Device Package: 48-QFN (7x7)
GPIO: 28
Modulation: O-QPSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: I²C, SPI, UART, USART, USB
DigiKey Programmable: Not Verified
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MIC2012PZMTR MCRLS03410-1.pdf?t.download=true&u=5oefqw
Виробник: Microchip Technology
Description: USB POWER CONTROLLER
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Function: Controller
Interface: USB
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Supply: 22µA
Protocol: USB
Supplier Device Package: 8-SOIC
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
238+105.31 грн
Мінімальне замовлення: 238
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MIC2015-0.8YMLTR MCRLS04133-1.pdf?t.download=true&u=5oefqw
MIC2015-0.8YMLTR
Виробник: Microchip Technology
Description: FIXED CURRENT LIMIT POWER DISTRI
Features: Slew Rate Controlled
Packaging: Bulk
Package / Case: 6-VDFN Exposed Pad, 6-MLF®
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 2.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.1A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-MLF® (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Part Status: Active
на замовлення 2301 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1110+22.57 грн
Мінімальне замовлення: 1110
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MIC2013-0.5YMLTR MCRLS04133-1.pdf?t.download=true&u=5oefqw
MIC2013-0.5YMLTR
Виробник: Microchip Technology
Description: CURRENT LIMITING CIRCUIT PROTECT
Packaging: Bulk
Package / Case: 6-VDFN Exposed Pad, 6-MLF®
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 2.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.1A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-MLF® (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Part Status: Active
на замовлення 4085 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1110+21.11 грн
Мінімальне замовлення: 1110
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MIC2019YM6 MCRLS03642-1.pdf?t.download=true&u=5oefqw
MIC2019YM6
Виробник: Microchip Technology
Description: ADJUSTABLE CURRENT LIMIT POWER D
Packaging: Bulk
Package / Case: SOT-23-6
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 2.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-23-6
Fault Protection: Current Limiting (Adjustable), Over Temperature
Part Status: Obsolete
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JANTX2N3810U 8931-lds-0118-datasheet
Виробник: Microchip Technology
Description: TRANS 2PNP 60V 0.05A
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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JANSR2N3810U
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Tray
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 100µA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/336
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JANSR2N3810U/TR
JANSR2N3810U/TR
Виробник: Microchip Technology
Description: TRANSISTOR DUAL RH SMALL-SIGNAL
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 100µA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/336
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JANTXV2N3810U/TR
JANTXV2N3810U/TR
Виробник: Microchip Technology
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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JANTX2N3810U/TR
JANTX2N3810U/TR
Виробник: Microchip Technology
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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JAN2N3810 8931-lds-0118-datasheet
Виробник: Microchip Technology
Description: TRANS 2PNP 60V 0.05A TO78
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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JAN2N3810U/TR
JAN2N3810U/TR
Виробник: Microchip Technology
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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JANS2N3810
JANS2N3810
Виробник: Microchip Technology
Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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JANSF2N3810
JANSF2N3810
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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JANS2N3810U/TR
JANS2N3810U/TR
Виробник: Microchip Technology
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/336
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JANKCAR2N3810
Виробник: Microchip Technology
Description: TRANSISTOR RH SMALL-SIGNAL BJT
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JANS2N3810U
Виробник: Microchip Technology
Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/336
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JANKCA2N3810 14809-military-qualified-die-chip
Виробник: Microchip Technology
Description: TRANSISTOR SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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JANSM2N3810U/TR
JANSM2N3810U/TR
Виробник: Microchip Technology
Description: TRANSISTOR DUAL RH SMALL-SIGNAL
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/336
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JANSR2N3810
JANSR2N3810
Виробник: Microchip Technology
Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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2N3810U/TR
2N3810U/TR
Виробник: Microchip Technology
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
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JANS2N3810L
JANS2N3810L
Виробник: Microchip Technology
Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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JANSF2N3810L
JANSF2N3810L
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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JANSF2N3810U
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/336
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JANHCA2N3810 14809-military-qualified-die-chip
Виробник: Microchip Technology
Description: TRANSISTOR SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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JANSP2N3810U/TR
JANSP2N3810U/TR
Виробник: Microchip Technology
Description: TRANSISTOR DUAL RH SMALL-SIGNAL
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/336
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JANSL2N3810U/TR
JANSL2N3810U/TR
Виробник: Microchip Technology
Description: TRANSISTOR DUAL RH SMALL-SIGNAL
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/336
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MNS2N3810U/TR
Виробник: Microchip Technology
Description: DUAL SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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MNS2N3810UP/TR
Виробник: Microchip Technology
Description: DUAL SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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MNS2N3810UP
Виробник: Microchip Technology
Description: DUAL SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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2N2060 Dual_Transistors_TO-78_Case.1.pdf
2N2060
Виробник: Microchip Technology
Description: NPN TRANSISTOR
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JANTX2N2060
JANTX2N2060
Виробник: Microchip Technology
Description: NPN TRANSISTOR
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JAN2N2060
JAN2N2060
Виробник: Microchip Technology
Description: NPN LOW POWER SILICON TRANSISTOR
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ATR4251-PFQY 19 ATR4251_Rev09.pdf
ATR4251-PFQY 19
Виробник: Microchip Technology
Description: IC RF AMP BROADCAST RADIO 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: AM, FM
RF Type: Broadcast Radio
Voltage - Supply: 8V ~ 11V
Gain: 6dB
Current - Supply: 11mA ~ 17mA
Noise Figure: 2.8dB
Supplier Device Package: 24-QFN (4x4)
Part Status: Obsolete
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ATR4251-PFQY 19 ATR4251_Rev09.pdf
ATR4251-PFQY 19
Виробник: Microchip Technology
Description: IC RF AMP BROADCAST RADIO 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: AM, FM
RF Type: Broadcast Radio
Voltage - Supply: 8V ~ 11V
Gain: 6dB
Current - Supply: 11mA ~ 17mA
Noise Figure: 2.8dB
Supplier Device Package: 24-QFN (4x4)
Part Status: Obsolete
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JANTX1N972B-1 125314-lds-0287-datasheet
JANTX1N972B-1
Виробник: Microchip Technology
Description: DIODE ZENER 27V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 21 V
Qualification: MIL-PRF-19500/117
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MSCSM120DUM08T3AG
MSCSM120DUM08T3AG
Виробник: Microchip Technology
Description: MOSFET 2N-CH 1200V 337A SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1409W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 337A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 1000V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 4mA
Supplier Device Package: SP3F
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+30737.71 грн
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MSCSM120TLM08CAG
MSCSM120TLM08CAG
Виробник: Microchip Technology
Description: SIC 4N-CH 1200V 333A SP6C
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Three Level Inverter)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1378W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 333A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 1000V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 4mA
Supplier Device Package: SP6C
Part Status: Active
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+79324.95 грн
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MSCSM120DUM16T3AG
Виробник: Microchip Technology
Description: SIC 2N-CH 1200V 173A SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 745W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 2mA
Supplier Device Package: SP3F
Part Status: Active
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MSCSM120DUM027AG
Виробник: Microchip Technology
Description: PM-MOSFET-SIC-SP6C
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2968W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 1000V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Part Status: Active
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MSCSM120TLM16C3AG
MSCSM120TLM16C3AG
Виробник: Microchip Technology
Description: MOSFET 4N-CH 1200V 173A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Three Level Inverter)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 745W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 2mA
Supplier Device Package: SP3F
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+24085.50 грн
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MSCSM120TLM11CAG
MSCSM120TLM11CAG
Виробник: Microchip Technology
Description: SIC 4N-CH 1200V 251A SP6C
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Three Level Inverter)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1042W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Supplier Device Package: SP6C
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+63199.69 грн
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MSCSM120TLM50C3AG 00004367A_MSCSM120TLM50C3AG.pdf
MSCSM120TLM50C3AG
Виробник: Microchip Technology
Description: MOSFET 4N-CH 1200V 55A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Three Level Inverter)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 245W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: SP3F
Part Status: Active
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+8784.35 грн
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MSCSM120TLM31C3AG
Виробник: Microchip Technology
Description: SIC 4N-CH 1200V 89A SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Three Level Inverter)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 395W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SP3F
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MSCSM120DUM11T3AG
Виробник: Microchip Technology
Description: PM-MOSFET-SIC-SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1067W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 254A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Supplier Device Package: SP3F
Part Status: Active
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MSCSM120DUM042AG
Виробник: Microchip Technology
Description: MOSFET 2N-CH 1200V 495A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2031W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+54371.87 грн
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MSCSM120HM063CAG
Виробник: Microchip Technology
Description: PM-MOSFET-SIC-SBD-SP6C
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MSCSM120HM083CAG
Виробник: Microchip Technology
Description: PM-MOSFET-SIC-SBD-SP6C
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JANTXV1N747C-1/TR 131821-lds-0288-datasheet
JANTXV1N747C-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
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JANTX1N747D-1/TR 131821-lds-0288-datasheet
JANTX1N747D-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
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JANTX1N747CUR-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: MIL-PRF-19500/127
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JAN1N747CUR-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: MIL-PRF-19500/127
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JAN1N747D-1/TR
JAN1N747D-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
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JANTXV1N747D-1/TR 131821-lds-0288-datasheet
JANTXV1N747D-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
товару немає в наявності
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