Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (337441) > Сторінка 1521 з 5625
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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JANHCA1N5538B | Microchip Technology |
 Description: VOLTAGE REGULATOR |
товару немає в наявності |
В кошику од. на суму грн. | ||
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JANHCA1N5537B | Microchip Technology |
Description: VOLTAGE REGULATOR |
товару немає в наявності |
В кошику од. на суму грн. | ||
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JANHCA1N5530B | Microchip Technology |
Description: VOLTAGE REGULATOR |
товару немає в наявності |
В кошику од. на суму грн. | ||
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JANHCA1N5539B | Microchip Technology |
Description: VOLTAGE REGULATOR |
товару немає в наявності |
В кошику од. на суму грн. | ||
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JANHCA1N5531B | Microchip Technology |
Description: VOLTAGE REGULATOR |
товару немає в наявності |
В кошику од. на суму грн. | ||
| JAN1N6040A | Microchip Technology | Description: TVS DIODE 9VWM 15.6VC DO13 |
товару немає в наявності |
В кошику од. на суму грн. | |||
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JAN1N6041A | Microchip Technology |
Description: TVS DIODE 10VWM 16.7VC DO13 Packaging: Bulk Package / Case: DO-202AA, DO-13, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 90A Voltage - Reverse Standoff (Typ): 10V Supplier Device Package: DO-13 (DO-202AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 11.4V Voltage - Clamping (Max) @ Ipp: 16.7V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500/507 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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JANTX1N6040A/TR | Microchip Technology |
Description: TVS DIODE 9VWM 15.6VC DO13 |
товару немає в наявності |
В кошику од. на суму грн. | ||
| JANTXV1N6042A | Microchip Technology | Description: TVS DIODE 11VWM 18.2VC DO13 |
товару немає в наявності |
В кошику од. на суму грн. | |||
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JAN1N6040A/TR | Microchip Technology |
Description: TVS DIODE 9VWM 15.6VC DO13 |
товару немає в наявності |
В кошику од. на суму грн. | ||
| JAN1N6048A | Microchip Technology | Description: TVS DIODE 20VWM 33.2VC DO13 |
товару немає в наявності |
В кошику од. на суму грн. | |||
| JAN1N6046A | Microchip Technology | Description: TVS DIODE 17VWM 27.7VC DO13 |
товару немає в наявності |
В кошику од. на суму грн. | |||
| JANTXV1N6049A | Microchip Technology | Description: TVS DIODE 22VWM 37.5VC DO13 |
товару немає в наявності |
В кошику од. на суму грн. | |||
| JANTXV1N6045A | Microchip Technology | Description: TVS DIODE 15VWM 25.2VC DO13 |
товару немає в наявності |
В кошику од. на суму грн. | |||
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1N6045AE3 | Microchip Technology |
Description: TVS DIODE 15VWM 25.2VC DO13 Packaging: Bulk Package / Case: DO-13 Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 59.5A Voltage - Reverse Standoff (Typ): 15V Supplier Device Package: DO-13 (DO-202AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 17.1V Voltage - Clamping (Max) @ Ipp: 25.2V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||
| JANTXV1N6044A | Microchip Technology | Description: TVS DIODE 13VWM 22.5VC DO13 |
товару немає в наявності |
В кошику од. на суму грн. | |||
| JAN1N6049A | Microchip Technology | Description: TVS DIODE 22VWM 37.5VC DO13 |
товару немає в наявності |
В кошику од. на суму грн. | |||
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JANTXV1N6040A/TR | Microchip Technology |
Description: TVS DIODE 9VWM 15.6VC DO13 |
товару немає в наявності |
В кошику од. на суму грн. | ||
| JANTXV1N6043A | Microchip Technology | Description: TVS DIODE 12VWM 21.2VC DO13 |
товару немає в наявності |
В кошику од. на суму грн. | |||
| JAN1N6042A | Microchip Technology | Description: TVS DIODE 11VWM 18.2VC DO13 |
товару немає в наявності |
В кошику од. на суму грн. | |||
| JANTXV1N6048A | Microchip Technology | Description: TVS DIODE 20VWM 33.2VC DO13 |
товару немає в наявності |
В кошику од. на суму грн. | |||
| JANTX1N6049A | Microchip Technology | Description: TVS DIODE 22VWM 37.5VC DO13 |
товару немає в наявності |
В кошику од. на суму грн. | |||
| JANTXV1N6040A | Microchip Technology | Description: TVS DIODE 9VWM 15.6VC DO13 |
товару немає в наявності |
В кошику од. на суму грн. | |||
| JANTXV1N6046A | Microchip Technology | Description: TVS DIODE 17VWM 27.7VC DO13 |
товару немає в наявності |
В кошику од. на суму грн. | |||
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1N6048A/TR | Microchip Technology |
Description: TVS DIODE 20VWM 33.2VC DO13 Packaging: Tape & Reel (TR) Package / Case: DO-13 Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 45A Voltage - Reverse Standoff (Typ): 20V Supplier Device Package: DO-13 Bidirectional Channels: 1 Voltage - Breakdown (Min): 22.8V Voltage - Clamping (Max) @ Ipp: 33.2V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||
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1N6049A/TR | Microchip Technology |
Description: TVS DIODE 22VWM 37.5VC DO13 Packaging: Tape & Reel (TR) Package / Case: DO-13 Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 40A Voltage - Reverse Standoff (Typ): 22V Supplier Device Package: DO-13 Bidirectional Channels: 1 Voltage - Breakdown (Min): 25.7V Voltage - Clamping (Max) @ Ipp: 37.5V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||
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1N6047A/TR | Microchip Technology |
Description: TVS DIODE 18VWM 30.6VC DO13 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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1N6040A/TR | Microchip Technology |
Description: TVS DIODE 9VWM 15.6VC DO13 Packaging: Tape & Reel (TR) Package / Case: DO-13 Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 96A Voltage - Reverse Standoff (Typ): 9V Supplier Device Package: DO-13 Bidirectional Channels: 1 Voltage - Breakdown (Min): 10.5V Voltage - Clamping (Max) @ Ipp: 15.6V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||
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1N6041A/TR | Microchip Technology |
Description: TVS DIODE 10VWM 16.7VC DO13 Packaging: Tape & Reel (TR) Package / Case: DO-202AA, DO-13, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 90A Voltage - Reverse Standoff (Typ): 10V Supplier Device Package: DO-13 (DO-202AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 11.4V Voltage - Clamping (Max) @ Ipp: 16.7V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||
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1N6044A/TR | Microchip Technology |
Description: TVS DIODE 13VWM 22.5VC DO13 Packaging: Tape & Reel (TR) Package / Case: DO-13 Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 67A Voltage - Reverse Standoff (Typ): 13V Supplier Device Package: DO-13 Bidirectional Channels: 1 Voltage - Breakdown (Min): 15.2V Voltage - Clamping (Max) @ Ipp: 22.5V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||
| GC2530-30 | Microchip Technology | Description: SI SRD HERMETIC PILL |
товару немає в наявності |
В кошику од. на суму грн. | |||
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MAPLAD15KP10Ae3 | Microchip Technology |
Description: TVS DIODE 10VWM 17VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 882A Voltage - Reverse Standoff (Typ): 10V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 11.1V Voltage - Clamping (Max) @ Ipp: 17V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||
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MPLAD7.5KP36A/TR | Microchip Technology |
Description: TVS DIODE 36VWM 58.1VC MINIPLAD Packaging: Tape & Reel (TR) Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 129A Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: Mini-PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 40V Voltage - Clamping (Max) @ Ipp: 58.1V Power - Peak Pulse: 7500W (7.5kW) Power Line Protection: No Part Status: Active Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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MPLAD7.5KP36A/TR | Microchip Technology |
Description: TVS DIODE 36VWM 58.1VC MINIPLAD Packaging: Cut Tape (CT) Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 129A Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: Mini-PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 40V Voltage - Clamping (Max) @ Ipp: 58.1V Power - Peak Pulse: 7500W (7.5kW) Power Line Protection: No Part Status: Active Grade: Military Qualification: MIL-PRF-19500 |
на замовлення 190 шт: термін постачання 21-31 дні (днів) |
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MXLPLAD15KP36A | Microchip Technology |
Description: TVS DIODE 36VWM 58.1VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 258A Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 40V Voltage - Clamping (Max) @ Ipp: 58.1V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||
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MXL15KP36Ae3 | Microchip Technology |
Description: TVS DIODE 36VWM 59.7VC CASE 5A Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 251A Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: Case 5A (DO-204AR) Unidirectional Channels: 1 Voltage - Breakdown (Min): 40V Voltage - Clamping (Max) @ Ipp: 59.7V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||
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MA15KP36Ae3 | Microchip Technology |
Description: TVS DIODE 36VWM 59.7VC DO204AR Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 251A Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: DO-204AR Unidirectional Channels: 1 Voltage - Breakdown (Min): 40V Voltage - Clamping (Max) @ Ipp: 59.7V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No Part Status: Active Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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MX15KP36A | Microchip Technology |
Description: TVS DIODE 36VWM 59.7VC CASE 5A |
товару немає в наявності |
В кошику од. на суму грн. | ||
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MX15KP36Ae3 | Microchip Technology |
Description: TVS DIODE 36VWM 59.7VC CASE 5A Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 251A Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: Case 5A (DO-204AR) Unidirectional Channels: 1 Voltage - Breakdown (Min): 40V Voltage - Clamping (Max) @ Ipp: 59.7V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||
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MXLPLAD15KP36Ae3 | Microchip Technology |
Description: TVS DIODE 36VWM 58.1VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 258A Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 40V Voltage - Clamping (Max) @ Ipp: 58.1V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||
| CDLL4959 | Microchip Technology |
Description: VOLTAGE REGULATOR Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||
| JANS2N4449 | Microchip Technology |
Description: TRANS NPN 20V TO46 Packaging: Bulk Package / Case: TO-206AB, TO-46-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Supplier Device Package: TO-46 (TO-206AB) Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 360 mW Grade: Military Qualification: MIL-PRF-19500/317 |
товару немає в наявності |
В кошику од. на суму грн. | |||
| JANSF2N4449 | Microchip Technology |
Description: TRANS NPN 20V TO46 Packaging: Bulk Package / Case: TO-206AB, TO-46-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Supplier Device Package: TO-46 (TO-206AB) Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 360 mW Grade: Military Qualification: MIL-PRF-19500/317 |
товару немає в наявності |
В кошику од. на суму грн. | |||
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JAN2N4449UA/TR | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Supplier Device Package: UA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 500 mW Grade: Military Qualification: MIL-PRF-19500/317 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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JAN2N4449UB | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Supplier Device Package: UB Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 400 mW Grade: Military Qualification: MIL-PRF-19500/317 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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2N4449UA | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Supplier Device Package: UA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 500 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||
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2N4449U | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Supplier Device Package: U Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 600 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||
| JANSP2N4449 | Microchip Technology | Description: RH SMALL-SIGNAL BJT |
товару немає в наявності |
В кошику од. на суму грн. | |||
| JANSL2N4449 | Microchip Technology | Description: RH SMALL-SIGNAL BJT |
товару немає в наявності |
В кошику од. на суму грн. | |||
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2N4449UA/TR | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Supplier Device Package: UA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 500 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||
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JAN2N4449UA | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Supplier Device Package: UA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 500 mW Grade: Military Qualification: MIL-PRF-19500/317 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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JAN2N4449UB/TR | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Supplier Device Package: UB Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 400 mW Grade: Military Qualification: MIL-PRF-19500/317 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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2N4449U/TR | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Supplier Device Package: U Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 600 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||
| JANSR2N4449 | Microchip Technology | Description: RH SMALL-SIGNAL BJT |
товару немає в наявності |
В кошику од. на суму грн. | |||
| JANSD2N4449 | Microchip Technology | Description: RH SMALL-SIGNAL BJT |
товару немає в наявності |
В кошику од. на суму грн. | |||
| JANSM2N4449 | Microchip Technology | Description: RH SMALL-SIGNAL BJT |
товару немає в наявності |
В кошику од. на суму грн. | |||
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PIC16LF18877-E/ML | Microchip Technology |
Description: IC MCU 8BIT 56KB FLASH 44QFN Packaging: Tube Package / Case: 44-VQFN Exposed Pad Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 56KB (32K x 14) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 256 x 8 Core Processor: PIC Data Converters: A/D 35x10b; D/A 1x5b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V Connectivity: I²C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 44-QFN (8x8) Number of I/O: 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||
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PIC16LF18877-E/P | Microchip Technology |
Description: IC MCU 8BIT 56KB FLASH 40DIP Packaging: Tube Package / Case: 40-DIP (0.600", 15.24mm) Mounting Type: Through Hole Speed: 32MHz Program Memory Size: 56KB (32K x 14) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 256 x 8 Core Processor: PIC Data Converters: A/D 35x10b; D/A 1x5b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V Connectivity: I²C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 40-PDIP Number of I/O: 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||
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PIC16LF18877-E/PT | Microchip Technology |
Description: IC MCU 8BIT 56KB FLASH 44TQFP Packaging: Tray Package / Case: 44-TQFP Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 56KB (32K x 14) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 256 x 8 Core Processor: PIC Data Converters: A/D 35x10b; D/A 1x5b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V Connectivity: I²C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 44-TQFP (10x10) Number of I/O: 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||
|
|
PIC16LF18877-I/P | Microchip Technology |
Description: IC MCU 8BIT 56KB FLASH 40DIP Packaging: Tube Package / Case: 40-DIP (0.600", 15.24mm) Mounting Type: Through Hole Speed: 32MHz Program Memory Size: 56KB (32K x 14) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 256 x 8 Core Processor: PIC Data Converters: A/D 35x10b; D/A 1x5b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V Connectivity: I²C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 40-PDIP Number of I/O: 36 DigiKey Programmable: Not Verified |
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В кошику од. на суму грн. |
| JANHCA1N5538B |
|
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Description: VOLTAGE REGULATOR
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В кошику
од. на суму грн.
| JANHCA1N5537B |
|
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Description: VOLTAGE REGULATOR
товару немає в наявності
В кошику
од. на суму грн.
| JANHCA1N5530B |
|
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Description: VOLTAGE REGULATOR
товару немає в наявності
В кошику
од. на суму грн.
| JANHCA1N5539B |
|
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Description: VOLTAGE REGULATOR
товару немає в наявності
В кошику
од. на суму грн.
| JANHCA1N5531B |
|
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Description: VOLTAGE REGULATOR
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В кошику
од. на суму грн.
| JAN1N6040A |
Виробник: Microchip Technology
Description: TVS DIODE 9VWM 15.6VC DO13
Description: TVS DIODE 9VWM 15.6VC DO13
товару немає в наявності
В кошику
од. на суму грн.
| JAN1N6041A |
|
Виробник: Microchip Technology
Description: TVS DIODE 10VWM 16.7VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 90A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/507
Description: TVS DIODE 10VWM 16.7VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 90A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/507
товару немає в наявності
В кошику
од. на суму грн.
| JANTX1N6040A/TR |
|
Виробник: Microchip Technology
Description: TVS DIODE 9VWM 15.6VC DO13
Description: TVS DIODE 9VWM 15.6VC DO13
товару немає в наявності
В кошику
од. на суму грн.
| JANTXV1N6042A |
Виробник: Microchip Technology
Description: TVS DIODE 11VWM 18.2VC DO13
Description: TVS DIODE 11VWM 18.2VC DO13
товару немає в наявності
В кошику
од. на суму грн.
| JAN1N6040A/TR |
|
Виробник: Microchip Technology
Description: TVS DIODE 9VWM 15.6VC DO13
Description: TVS DIODE 9VWM 15.6VC DO13
товару немає в наявності
В кошику
од. на суму грн.
| JAN1N6048A |
Виробник: Microchip Technology
Description: TVS DIODE 20VWM 33.2VC DO13
Description: TVS DIODE 20VWM 33.2VC DO13
товару немає в наявності
В кошику
од. на суму грн.
| JAN1N6046A |
Виробник: Microchip Technology
Description: TVS DIODE 17VWM 27.7VC DO13
Description: TVS DIODE 17VWM 27.7VC DO13
товару немає в наявності
В кошику
од. на суму грн.
| JANTXV1N6049A |
Виробник: Microchip Technology
Description: TVS DIODE 22VWM 37.5VC DO13
Description: TVS DIODE 22VWM 37.5VC DO13
товару немає в наявності
В кошику
од. на суму грн.
| JANTXV1N6045A |
Виробник: Microchip Technology
Description: TVS DIODE 15VWM 25.2VC DO13
Description: TVS DIODE 15VWM 25.2VC DO13
товару немає в наявності
В кошику
од. на суму грн.
| 1N6045AE3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 15VWM 25.2VC DO13
Packaging: Bulk
Package / Case: DO-13
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 59.5A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 15VWM 25.2VC DO13
Packaging: Bulk
Package / Case: DO-13
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 59.5A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| JANTXV1N6044A |
Виробник: Microchip Technology
Description: TVS DIODE 13VWM 22.5VC DO13
Description: TVS DIODE 13VWM 22.5VC DO13
товару немає в наявності
В кошику
од. на суму грн.
| JAN1N6049A |
Виробник: Microchip Technology
Description: TVS DIODE 22VWM 37.5VC DO13
Description: TVS DIODE 22VWM 37.5VC DO13
товару немає в наявності
В кошику
од. на суму грн.
| JANTXV1N6040A/TR |
|
Виробник: Microchip Technology
Description: TVS DIODE 9VWM 15.6VC DO13
Description: TVS DIODE 9VWM 15.6VC DO13
товару немає в наявності
В кошику
од. на суму грн.
| JANTXV1N6043A |
Виробник: Microchip Technology
Description: TVS DIODE 12VWM 21.2VC DO13
Description: TVS DIODE 12VWM 21.2VC DO13
товару немає в наявності
В кошику
од. на суму грн.
| JAN1N6042A |
Виробник: Microchip Technology
Description: TVS DIODE 11VWM 18.2VC DO13
Description: TVS DIODE 11VWM 18.2VC DO13
товару немає в наявності
В кошику
од. на суму грн.
| JANTXV1N6048A |
Виробник: Microchip Technology
Description: TVS DIODE 20VWM 33.2VC DO13
Description: TVS DIODE 20VWM 33.2VC DO13
товару немає в наявності
В кошику
од. на суму грн.
| JANTX1N6049A |
Виробник: Microchip Technology
Description: TVS DIODE 22VWM 37.5VC DO13
Description: TVS DIODE 22VWM 37.5VC DO13
товару немає в наявності
В кошику
од. на суму грн.
| JANTXV1N6040A |
Виробник: Microchip Technology
Description: TVS DIODE 9VWM 15.6VC DO13
Description: TVS DIODE 9VWM 15.6VC DO13
товару немає в наявності
В кошику
од. на суму грн.
| JANTXV1N6046A |
Виробник: Microchip Technology
Description: TVS DIODE 17VWM 27.7VC DO13
Description: TVS DIODE 17VWM 27.7VC DO13
товару немає в наявності
В кошику
од. на суму грн.
| 1N6048A/TR |
|
Виробник: Microchip Technology
Description: TVS DIODE 20VWM 33.2VC DO13
Packaging: Tape & Reel (TR)
Package / Case: DO-13
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 45A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-13
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 20VWM 33.2VC DO13
Packaging: Tape & Reel (TR)
Package / Case: DO-13
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 45A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-13
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| 1N6049A/TR |
|
Виробник: Microchip Technology
Description: TVS DIODE 22VWM 37.5VC DO13
Packaging: Tape & Reel (TR)
Package / Case: DO-13
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-13
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 22VWM 37.5VC DO13
Packaging: Tape & Reel (TR)
Package / Case: DO-13
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-13
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| 1N6047A/TR |
|
Виробник: Microchip Technology
Description: TVS DIODE 18VWM 30.6VC DO13
Description: TVS DIODE 18VWM 30.6VC DO13
товару немає в наявності
В кошику
од. на суму грн.
| 1N6040A/TR |
|
Виробник: Microchip Technology
Description: TVS DIODE 9VWM 15.6VC DO13
Packaging: Tape & Reel (TR)
Package / Case: DO-13
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 96A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-13
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10.5V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 9VWM 15.6VC DO13
Packaging: Tape & Reel (TR)
Package / Case: DO-13
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 96A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-13
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10.5V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| 1N6041A/TR |
|
Виробник: Microchip Technology
Description: TVS DIODE 10VWM 16.7VC DO13
Packaging: Tape & Reel (TR)
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 90A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 10VWM 16.7VC DO13
Packaging: Tape & Reel (TR)
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 90A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| 1N6044A/TR |
|
Виробник: Microchip Technology
Description: TVS DIODE 13VWM 22.5VC DO13
Packaging: Tape & Reel (TR)
Package / Case: DO-13
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 67A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-13
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 13VWM 22.5VC DO13
Packaging: Tape & Reel (TR)
Package / Case: DO-13
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 67A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-13
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| GC2530-30 |
Виробник: Microchip Technology
Description: SI SRD HERMETIC PILL
Description: SI SRD HERMETIC PILL
товару немає в наявності
В кошику
од. на суму грн.
| MAPLAD15KP10Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 10VWM 17VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 882A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 10VWM 17VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 882A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| MPLAD7.5KP36A/TR |
|
Виробник: Microchip Technology
Description: TVS DIODE 36VWM 58.1VC MINIPLAD
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 129A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 36VWM 58.1VC MINIPLAD
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 129A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| MPLAD7.5KP36A/TR |
|
Виробник: Microchip Technology
Description: TVS DIODE 36VWM 58.1VC MINIPLAD
Packaging: Cut Tape (CT)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 129A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 36VWM 58.1VC MINIPLAD
Packaging: Cut Tape (CT)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 129A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
на замовлення 190 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 480.03 грн |
| MXLPLAD15KP36A |
|
Виробник: Microchip Technology
Description: TVS DIODE 36VWM 58.1VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 258A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 36VWM 58.1VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 258A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| MXL15KP36Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 36VWM 59.7VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 251A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 59.7V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 36VWM 59.7VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 251A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 59.7V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| MA15KP36Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 36VWM 59.7VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 251A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 59.7V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 36VWM 59.7VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 251A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 59.7V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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| MX15KP36A |
|
Виробник: Microchip Technology
Description: TVS DIODE 36VWM 59.7VC CASE 5A
Description: TVS DIODE 36VWM 59.7VC CASE 5A
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| MX15KP36Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 36VWM 59.7VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 251A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 59.7V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 36VWM 59.7VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 251A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 59.7V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Part Status: Active
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| MXLPLAD15KP36Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 36VWM 58.1VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 258A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 36VWM 58.1VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 258A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Part Status: Active
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| JANS2N4449 |
Виробник: Microchip Technology
Description: TRANS NPN 20V TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: TO-46 (TO-206AB)
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/317
Description: TRANS NPN 20V TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: TO-46 (TO-206AB)
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/317
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| JANSF2N4449 |
Виробник: Microchip Technology
Description: TRANS NPN 20V TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: TO-46 (TO-206AB)
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/317
Description: TRANS NPN 20V TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: TO-46 (TO-206AB)
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/317
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| JAN2N4449UA/TR |
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: UA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/317
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: UA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/317
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| JAN2N4449UB |
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: UB
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 400 mW
Grade: Military
Qualification: MIL-PRF-19500/317
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: UB
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 400 mW
Grade: Military
Qualification: MIL-PRF-19500/317
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| 2N4449UA |
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: UA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 500 mW
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: UA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 500 mW
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| 2N4449U |
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: U
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 600 mW
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: U
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 600 mW
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| JANSP2N4449 |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Description: RH SMALL-SIGNAL BJT
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| JANSL2N4449 |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Description: RH SMALL-SIGNAL BJT
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| 2N4449UA/TR |
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: UA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 500 mW
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: UA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 500 mW
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| JAN2N4449UA |
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: UA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/317
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: UA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/317
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| JAN2N4449UB/TR |
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: UB
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 400 mW
Grade: Military
Qualification: MIL-PRF-19500/317
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: UB
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 400 mW
Grade: Military
Qualification: MIL-PRF-19500/317
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| 2N4449U/TR |
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: U
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 600 mW
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: U
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 600 mW
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| JANSR2N4449 |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Description: RH SMALL-SIGNAL BJT
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| JANSD2N4449 |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Description: RH SMALL-SIGNAL BJT
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| JANSM2N4449 |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Description: RH SMALL-SIGNAL BJT
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| PIC16LF18877-E/ML |
|
Виробник: Microchip Technology
Description: IC MCU 8BIT 56KB FLASH 44QFN
Packaging: Tube
Package / Case: 44-VQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 56KB (32K x 14)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 35x10b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I²C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 44-QFN (8x8)
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 56KB FLASH 44QFN
Packaging: Tube
Package / Case: 44-VQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 56KB (32K x 14)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 35x10b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I²C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 44-QFN (8x8)
Number of I/O: 36
DigiKey Programmable: Not Verified
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| PIC16LF18877-E/P |
|
Виробник: Microchip Technology
Description: IC MCU 8BIT 56KB FLASH 40DIP
Packaging: Tube
Package / Case: 40-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Speed: 32MHz
Program Memory Size: 56KB (32K x 14)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 35x10b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I²C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 40-PDIP
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 56KB FLASH 40DIP
Packaging: Tube
Package / Case: 40-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Speed: 32MHz
Program Memory Size: 56KB (32K x 14)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 35x10b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I²C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 40-PDIP
Number of I/O: 36
DigiKey Programmable: Not Verified
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| PIC16LF18877-E/PT |
|
Виробник: Microchip Technology
Description: IC MCU 8BIT 56KB FLASH 44TQFP
Packaging: Tray
Package / Case: 44-TQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 56KB (32K x 14)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 35x10b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I²C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 56KB FLASH 44TQFP
Packaging: Tray
Package / Case: 44-TQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 56KB (32K x 14)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 35x10b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I²C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 36
DigiKey Programmable: Not Verified
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| PIC16LF18877-I/P |
|
Виробник: Microchip Technology
Description: IC MCU 8BIT 56KB FLASH 40DIP
Packaging: Tube
Package / Case: 40-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Speed: 32MHz
Program Memory Size: 56KB (32K x 14)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 35x10b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I²C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 40-PDIP
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 56KB FLASH 40DIP
Packaging: Tube
Package / Case: 40-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Speed: 32MHz
Program Memory Size: 56KB (32K x 14)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 35x10b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I²C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 40-PDIP
Number of I/O: 36
DigiKey Programmable: Not Verified
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