Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (336742) > Сторінка 1537 з 5613
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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dsPIC33EP512GM310T-I/PT | Microchip Technology |
 Description: IC MCU 16BIT 512KB FLASH 100TQFP |
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dsPIC33EP128GM310T-I/BG | Microchip Technology |
Description: IC MCU 16BIT 128KB FLSH 121TFBGA |
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dsPIC33EP128GM310T-I/PT | Microchip Technology |
Description: IC MCU 16BIT 128KB FLASH 100TQFP |
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dsPIC33EP128GM310T-I/PF | Microchip Technology |
Description: IC MCU 16BIT 128KB FLASH 100TQFP |
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dsPIC33EP256GM310T-I/PF | Microchip Technology |
Description: IC MCU 16BIT 256KB FLASH 100TQFP |
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dsPIC33EP256GM310T-I/BG | Microchip Technology |
Description: IC MCU 16BIT 256KB FLSH 121TFBGA |
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dsPIC33EP512GM310T-I/BG | Microchip Technology |
Description: IC MCU 16BIT 512KB FLSH 121TFBGA |
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DSPIC33EP256GM310T-I/PT | Microchip Technology |
Description: IC MCU 16BIT 256KB FLASH 100TQFP |
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| VCC6-107-125M000000 | Microchip Technology |
Description: DIFFERENTIAL XO +3.3 VDC +/-5% L Packaging: Tape & Reel (TR) Part Status: Active |
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JANTXV1N3595AUR-1/TR | Microchip Technology |
Description: DIODE GP 125V 150MA DO213AA Packaging: Tape & Reel (TR) Package / Case: DO-213AA Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 125 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 nA @ 125 V |
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JANTX1N3595A-1/TR | Microchip Technology |
Description: DIODE GEN PURP 125V 150MA DO35 Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 125 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 nA @ 125 V Qualification: MIL-S-19500-241 |
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JANS1N3595-1/TR | Microchip Technology | Description: DIODE GEN PURP 125V 200MA DO35 |
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| JANTX1N3595UR-1/TR | Microchip Technology |
Description: DIODE GP 125V 150MA DO213AA Packaging: Tape & Reel (TR) Package / Case: DO-213AA Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 125 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA Current - Reverse Leakage @ Vr: 1 nA @ 125 V Qualification: MIL-S-19500-241 |
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JANTX1N3595-1/TR | Microchip Technology |
Description: DIODE GEN PURP 125V 150MA DO35 Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 125 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA Current - Reverse Leakage @ Vr: 1 nA @ 125 V Qualification: MIL-S-19500-241 |
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JANTXV1N3595A-1/TR | Microchip Technology |
Description: DIODE GEN PURP 125V 150MA DO35 Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 125 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 nA @ 125 V Qualification: MIL-PRF-19500/241 |
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| JANHCB1N3595 | Microchip Technology |
Description: DIODE GEN PURP 125V 200MA DO35 |
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| JAN1N3595UR-1/TR | Microchip Technology |
Description: DIODE GP 125V 150MA DO213AA Packaging: Tape & Reel (TR) Package / Case: DO-213AA Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 125 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA Current - Reverse Leakage @ Vr: 1 nA @ 125 V Qualification: MIL-PRF-19500/241 |
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| JANKCB1N3595 | Microchip Technology |
Description: DIODE GEN PURP 125V 200MA DO35 |
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JAN1N3595A-1/TR | Microchip Technology |
Description: DIODE GEN PURP 125V 150MA DO35 Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 125 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 nA @ 125 V Qualification: MIL-PRF-19500/241 |
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JANTXV1N3595UR-1/TR | Microchip Technology | Description: DIODE GP 125V 150MA DO213AA |
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JAN1N3595-1/TR | Microchip Technology |
Description: DIODE GEN PURP 125V 150MA DO35 Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 125 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 nA @ 125 V Qualification: MIL-PRF-19500/241 |
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| 1N3595UR-1/TR | Microchip Technology |
Description: DIODE GP 125V 150MA DO213AA Packaging: Tape & Reel (TR) Package / Case: DO-213AA Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 125 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 nA @ 125 V |
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1N3595-1/TR | Microchip Technology |
Description: DIODE GEN PURP 125V 150MA DO35 Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 125 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 nA @ 125 V |
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JANS1N3595US/TR | Microchip Technology | Description: DIODE GEN PURP 200MA B SQ-MELF |
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JANTX1N3595US/TR | Microchip Technology |
Description: DIODE GEN PURP 200MA B SQ-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 nA @ 125 V Qualification: MIL-S-19500-241 |
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JANS1N3595A-1 | Microchip Technology |
Description: DIODE GEN PURP 125V 150MA DO35 |
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JANTXV1N3595-1/TR | Microchip Technology |
Description: DIODE GEN PURP 125V 150MA Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 150mA Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 125 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 nA @ 125 V Qualification: MIL-PRF-19500/241 |
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JAN1N3595US/TR | Microchip Technology |
Description: DIODE GEN PURP 125V 4A B SQ-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Voltage - DC Reverse (Vr) (Max): 125 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Qualification: MIL-PRF-19500/241 |
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JANTXV1N3595US/TR | Microchip Technology |
Description: DIODE GEN PURP 125V 4A B SQ-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Voltage - DC Reverse (Vr) (Max): 125 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Qualification: MIL-PRF-19500/241 |
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JAN1N3595US | Microchip Technology |
Description: DIODE GEN PURP 125V 4A B SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Voltage - DC Reverse (Vr) (Max): 125 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Qualification: MIL-PRF-19500/241 |
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JANHCA1N5532C | Microchip Technology | Description: VOLTAGE REGULATOR |
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-Axial-Microchip.JPG "1N5532A/TR") |
1N5532A/TR | Microchip Technology |
Description: VOLTAGE REGULATOR Tolerance: ±10% Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 12 V Supplier Device Package: DO-35 (DO-204AH) Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 50 nA @ 9.5 V |
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1N4743AUR-1E3 | Microchip Technology |
Description: VOLTAGE REGULATOR Packaging: Bulk Tolerance: ±5% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-213AB (MELF, LL41) Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 9.9 V |
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1N4743AE3 | Microchip Technology |
Description: VOLTAGE REGULATOR Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AL, DO041, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-41 Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 9.9 V |
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VC-820-JAE-FAAN-66M6660000 | Microchip Technology | Description: VC-820-JAE-FAAN-66M6660000 |
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| VT-501-EAJ-106A-10M0000000 | Microchip Technology |
Description: TCXO +3.3 VDC +/-5% CMOS -20C TO |
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| VT-840-EFE-106A-10M0000000 | Microchip Technology |
Description: TCXO +3.3 VDC +/-10% CLIPPED SIN |
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| VT-820-JFH-256A-10M0000000 | Microchip Technology |
Description: TCXO +1.8 VDC +/-5% CLIPPED SINE |
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| VT-501-EAE-256A-10M0000000 | Microchip Technology |
Description: TCXO +3.3 VDC +/-5% CMOS -40C TO |
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| VT-501-EAE-106A-10M0000000 | Microchip Technology |
Description: TCXO +3.3 VDC +/-5% CMOS -40C TO |
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MIC5245-3.3BM5-TR | Microchip Technology |
Description: IC REG LINEAR 3.3V 150MA SOT23-5 Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 150 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: SOT-23-5 Voltage - Output (Min/Fixed): 3.3V Control Features: Enable PSRR: 50dB (120Hz) Voltage Dropout (Max): 0.25V @ 150mA Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) |
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MXSMBJ160CAe3 | Microchip Technology |
Description: TVS DIODE 160VWM 259VC SMBJ Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2.3A Voltage - Reverse Standoff (Typ): 160V Supplier Device Package: SMBJ (DO-214AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 178V Voltage - Clamping (Max) @ Ipp: 259V Power - Peak Pulse: 600W Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
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MASMBJ160CAe3 | Microchip Technology |
Description: TVS DIODE 160VWM 259VC SMBJ Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2.3A Voltage - Reverse Standoff (Typ): 160V Supplier Device Package: SMBJ (DO-214AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 178V Voltage - Clamping (Max) @ Ipp: 259V Power - Peak Pulse: 600W Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
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MSMBJ160CA | Microchip Technology |
Description: TVS DIODE 160VWM 259VC SMBJ Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2.3A Voltage - Reverse Standoff (Typ): 160V Supplier Device Package: SMBJ (DO-214AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 178V Voltage - Clamping (Max) @ Ipp: 259V Power - Peak Pulse: 600W Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
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MXSMBJ160CA | Microchip Technology |
Description: TVS DIODE 160VWM 259VC SMBJ Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2.3A Voltage - Reverse Standoff (Typ): 160V Supplier Device Package: SMBJ (DO-214AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 178V Voltage - Clamping (Max) @ Ipp: 259V Power - Peak Pulse: 600W Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
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MXLSMBJ160CA | Microchip Technology |
Description: TVS DIODE 160VWM 259VC SMBJ Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2.3A Voltage - Reverse Standoff (Typ): 160V Supplier Device Package: SMBJ (DO-214AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 178V Voltage - Clamping (Max) @ Ipp: 259V Power - Peak Pulse: 600W Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
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MSCSM170AM15CT3AG | Microchip Technology |
Description: SIC 2N-CH 1700V 181A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 862W (Tc) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 181A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 1000V Rds On (Max) @ Id, Vgs: 15mOhm @ 90A, 20V Gate Charge (Qg) (Max) @ Vgs: 534nC @ 20V Vgs(th) (Max) @ Id: 3.2V @ 7.5mA |
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JAN1N6133 | Microchip Technology |
Description: TVS DIODE 98.8VWM 187.74VC AXIAL Packaging: Bulk Package / Case: B, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2.66A Voltage - Reverse Standoff (Typ): 98.8V Supplier Device Package: B, Axial Bidirectional Channels: 1 Voltage - Breakdown (Min): 117.33V Voltage - Clamping (Max) @ Ipp: 187.74V Power - Peak Pulse: 500W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500/516 |
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| JANTXV1N6133 | Microchip Technology |
Description: TVS DIODE 98.8VWM 187.74VC AXIAL |
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JAN1N6133US/TR | Microchip Technology | Description: TVS DIODE 98.8VWM 187.74VC MELF |
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| JAN1N6133US | Microchip Technology |
Description: TVS DIODE 98.8VWM 187.74VC MELF |
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| JANTX1N6169US | Microchip Technology |
Description: TVS DIODE 98.8VWM 187.74VC MELF |
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| JANTX1N6133US | Microchip Technology |
Description: TVS DIODE 98.8VWM 187.74VC MELF |
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JANTXV1N6169US/TR | Microchip Technology | Description: TVS DIODE 98.8VWM 187.74VC MELF |
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| JANTX1N6133 | Microchip Technology |
Description: TVS DIODE 98.8VWM 187.74VC AXIAL |
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| JANTXV1N6169US | Microchip Technology |
Description: TVS DIODE 98.8VWM 187.74VC MELF |
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MSMBG7.0CA | Microchip Technology |
Description: TVS DIODE 7VWM 12VC SMBG |
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| 2N5584 | Microchip Technology | Description: POWER BJT |
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AT25FS040N-SH27-B | Microchip Technology |
Description: IC FLASH 4MBIT SPI 50MHZ 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TC) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH Clock Frequency: 50 MHz Memory Format: FLASH Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 50µs Memory Interface: SPI Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
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AT25FS010N-SH27-B | Microchip Technology |
Description: IC FLASH 1MBIT SPI 50MHZ 8SOIC |
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| dsPIC33EP512GM310T-I/PT |
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Виробник: Microchip Technology
Description: IC MCU 16BIT 512KB FLASH 100TQFP
Description: IC MCU 16BIT 512KB FLASH 100TQFP
товар відсутній
| dsPIC33EP128GM310T-I/BG |
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Виробник: Microchip Technology
Description: IC MCU 16BIT 128KB FLSH 121TFBGA
Description: IC MCU 16BIT 128KB FLSH 121TFBGA
товар відсутній
| dsPIC33EP128GM310T-I/PT |
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Виробник: Microchip Technology
Description: IC MCU 16BIT 128KB FLASH 100TQFP
Description: IC MCU 16BIT 128KB FLASH 100TQFP
товар відсутній
| dsPIC33EP128GM310T-I/PF |
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Виробник: Microchip Technology
Description: IC MCU 16BIT 128KB FLASH 100TQFP
Description: IC MCU 16BIT 128KB FLASH 100TQFP
товар відсутній
| dsPIC33EP256GM310T-I/PF |
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Виробник: Microchip Technology
Description: IC MCU 16BIT 256KB FLASH 100TQFP
Description: IC MCU 16BIT 256KB FLASH 100TQFP
товар відсутній
| dsPIC33EP256GM310T-I/BG |
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Виробник: Microchip Technology
Description: IC MCU 16BIT 256KB FLSH 121TFBGA
Description: IC MCU 16BIT 256KB FLSH 121TFBGA
товар відсутній
| dsPIC33EP512GM310T-I/BG |
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Виробник: Microchip Technology
Description: IC MCU 16BIT 512KB FLSH 121TFBGA
Description: IC MCU 16BIT 512KB FLSH 121TFBGA
товар відсутній
| DSPIC33EP256GM310T-I/PT |
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Виробник: Microchip Technology
Description: IC MCU 16BIT 256KB FLASH 100TQFP
Description: IC MCU 16BIT 256KB FLASH 100TQFP
товар відсутній
| VCC6-107-125M000000 |
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Виробник: Microchip Technology
Description: DIFFERENTIAL XO +3.3 VDC +/-5% L
Packaging: Tape & Reel (TR)
Part Status: Active
Description: DIFFERENTIAL XO +3.3 VDC +/-5% L
Packaging: Tape & Reel (TR)
Part Status: Active
товар відсутній
| JANTXV1N3595AUR-1/TR |
Виробник: Microchip Technology
Description: DIODE GP 125V 150MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 nA @ 125 V
Description: DIODE GP 125V 150MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 nA @ 125 V
товар відсутній
| JANTX1N3595A-1/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 125V 150MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 nA @ 125 V
Qualification: MIL-S-19500-241
Description: DIODE GEN PURP 125V 150MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 nA @ 125 V
Qualification: MIL-S-19500-241
товар відсутній
| JANS1N3595-1/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 125V 200MA DO35
Description: DIODE GEN PURP 125V 200MA DO35
товар відсутній
| JANTX1N3595UR-1/TR |
Виробник: Microchip Technology
Description: DIODE GP 125V 150MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Qualification: MIL-S-19500-241
Description: DIODE GP 125V 150MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Qualification: MIL-S-19500-241
товар відсутній
| JANTX1N3595-1/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 125V 150MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Qualification: MIL-S-19500-241
Description: DIODE GEN PURP 125V 150MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Qualification: MIL-S-19500-241
товар відсутній
| JANTXV1N3595A-1/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 125V 150MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 nA @ 125 V
Qualification: MIL-PRF-19500/241
Description: DIODE GEN PURP 125V 150MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 nA @ 125 V
Qualification: MIL-PRF-19500/241
товар відсутній
| JANHCB1N3595 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 125V 200MA DO35
Description: DIODE GEN PURP 125V 200MA DO35
товар відсутній
| JAN1N3595UR-1/TR |
Виробник: Microchip Technology
Description: DIODE GP 125V 150MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Qualification: MIL-PRF-19500/241
Description: DIODE GP 125V 150MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Qualification: MIL-PRF-19500/241
товар відсутній
| JANKCB1N3595 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 125V 200MA DO35
Description: DIODE GEN PURP 125V 200MA DO35
товар відсутній
| JAN1N3595A-1/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 125V 150MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 nA @ 125 V
Qualification: MIL-PRF-19500/241
Description: DIODE GEN PURP 125V 150MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 nA @ 125 V
Qualification: MIL-PRF-19500/241
товар відсутній
| JANTXV1N3595UR-1/TR |
Виробник: Microchip Technology
Description: DIODE GP 125V 150MA DO213AA
Description: DIODE GP 125V 150MA DO213AA
товар відсутній
| JAN1N3595-1/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 125V 150MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Qualification: MIL-PRF-19500/241
Description: DIODE GEN PURP 125V 150MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Qualification: MIL-PRF-19500/241
товар відсутній
| 1N3595UR-1/TR |
|
Виробник: Microchip Technology
Description: DIODE GP 125V 150MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Description: DIODE GP 125V 150MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
товар відсутній
| 1N3595-1/TR |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 125V 150MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Description: DIODE GEN PURP 125V 150MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
товар відсутній
| JANS1N3595US/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 200MA B SQ-MELF
Description: DIODE GEN PURP 200MA B SQ-MELF
товар відсутній
| JANTX1N3595US/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 200MA B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Qualification: MIL-S-19500-241
Description: DIODE GEN PURP 200MA B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Qualification: MIL-S-19500-241
товар відсутній
| JANS1N3595A-1 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 125V 150MA DO35
Description: DIODE GEN PURP 125V 150MA DO35
товар відсутній
| JANTXV1N3595-1/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 125V 150MA
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Qualification: MIL-PRF-19500/241
Description: DIODE GEN PURP 125V 150MA
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Qualification: MIL-PRF-19500/241
товар відсутній
| JAN1N3595US/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 125V 4A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Qualification: MIL-PRF-19500/241
Description: DIODE GEN PURP 125V 4A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Qualification: MIL-PRF-19500/241
товар відсутній
| JANTXV1N3595US/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 125V 4A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Qualification: MIL-PRF-19500/241
Description: DIODE GEN PURP 125V 4A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Qualification: MIL-PRF-19500/241
товар відсутній
| JAN1N3595US |
Виробник: Microchip Technology
Description: DIODE GEN PURP 125V 4A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Qualification: MIL-PRF-19500/241
Description: DIODE GEN PURP 125V 4A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Qualification: MIL-PRF-19500/241
товар відсутній
| 1N5532A/TR |
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.5 V
Description: VOLTAGE REGULATOR
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.5 V
товар відсутній
| 1N4743AUR-1E3 |
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 9.9 V
Description: VOLTAGE REGULATOR
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 9.9 V
товар відсутній
| 1N4743AE3 |
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO041, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 9.9 V
Description: VOLTAGE REGULATOR
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO041, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 9.9 V
товар відсутній
| VC-820-JAE-FAAN-66M6660000 |
Виробник: Microchip Technology
Description: VC-820-JAE-FAAN-66M6660000
Description: VC-820-JAE-FAAN-66M6660000
товар відсутній
| VT-501-EAJ-106A-10M0000000 |
|
Виробник: Microchip Technology
Description: TCXO +3.3 VDC +/-5% CMOS -20C TO
Description: TCXO +3.3 VDC +/-5% CMOS -20C TO
товар відсутній
| VT-840-EFE-106A-10M0000000 |
|
Виробник: Microchip Technology
Description: TCXO +3.3 VDC +/-10% CLIPPED SIN
Description: TCXO +3.3 VDC +/-10% CLIPPED SIN
товар відсутній
| VT-820-JFH-256A-10M0000000 |
|
Виробник: Microchip Technology
Description: TCXO +1.8 VDC +/-5% CLIPPED SINE
Description: TCXO +1.8 VDC +/-5% CLIPPED SINE
товар відсутній
| VT-501-EAE-256A-10M0000000 |
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Виробник: Microchip Technology
Description: TCXO +3.3 VDC +/-5% CMOS -40C TO
Description: TCXO +3.3 VDC +/-5% CMOS -40C TO
товар відсутній
| VT-501-EAE-106A-10M0000000 |
|
Виробник: Microchip Technology
Description: TCXO +3.3 VDC +/-5% CMOS -40C TO
Description: TCXO +3.3 VDC +/-5% CMOS -40C TO
товар відсутній
| MIC5245-3.3BM5-TR |
|
Виробник: Microchip Technology
Description: IC REG LINEAR 3.3V 150MA SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 50dB (120Hz)
Voltage Dropout (Max): 0.25V @ 150mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Description: IC REG LINEAR 3.3V 150MA SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 50dB (120Hz)
Voltage Dropout (Max): 0.25V @ 150mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
товар відсутній
| MXSMBJ160CAe3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 160VWM 259VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: SMBJ (DO-214AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 160VWM 259VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: SMBJ (DO-214AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
товар відсутній
| MASMBJ160CAe3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 160VWM 259VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: SMBJ (DO-214AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 160VWM 259VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: SMBJ (DO-214AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
товар відсутній
| MSMBJ160CA |
|
Виробник: Microchip Technology
Description: TVS DIODE 160VWM 259VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: SMBJ (DO-214AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 160VWM 259VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: SMBJ (DO-214AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
товар відсутній
| MXSMBJ160CA |
|
Виробник: Microchip Technology
Description: TVS DIODE 160VWM 259VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: SMBJ (DO-214AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 160VWM 259VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: SMBJ (DO-214AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
товар відсутній
| MXLSMBJ160CA |
|
Виробник: Microchip Technology
Description: TVS DIODE 160VWM 259VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: SMBJ (DO-214AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 160VWM 259VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: SMBJ (DO-214AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
товар відсутній
| MSCSM170AM15CT3AG |
|
Виробник: Microchip Technology
Description: SIC 2N-CH 1700V 181A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 862W (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 181A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 1000V
Rds On (Max) @ Id, Vgs: 15mOhm @ 90A, 20V
Gate Charge (Qg) (Max) @ Vgs: 534nC @ 20V
Vgs(th) (Max) @ Id: 3.2V @ 7.5mA
Description: SIC 2N-CH 1700V 181A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 862W (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 181A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 1000V
Rds On (Max) @ Id, Vgs: 15mOhm @ 90A, 20V
Gate Charge (Qg) (Max) @ Vgs: 534nC @ 20V
Vgs(th) (Max) @ Id: 3.2V @ 7.5mA
товар відсутній
| JAN1N6133 |
|
Виробник: Microchip Technology
Description: TVS DIODE 98.8VWM 187.74VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.66A
Voltage - Reverse Standoff (Typ): 98.8V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 117.33V
Voltage - Clamping (Max) @ Ipp: 187.74V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
Description: TVS DIODE 98.8VWM 187.74VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.66A
Voltage - Reverse Standoff (Typ): 98.8V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 117.33V
Voltage - Clamping (Max) @ Ipp: 187.74V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
товар відсутній
| JANTXV1N6133 |
|
Виробник: Microchip Technology
Description: TVS DIODE 98.8VWM 187.74VC AXIAL
Description: TVS DIODE 98.8VWM 187.74VC AXIAL
товар відсутній
| JAN1N6133US/TR |
Виробник: Microchip Technology
Description: TVS DIODE 98.8VWM 187.74VC MELF
Description: TVS DIODE 98.8VWM 187.74VC MELF
товар відсутній
| JAN1N6133US |
|
Виробник: Microchip Technology
Description: TVS DIODE 98.8VWM 187.74VC MELF
Description: TVS DIODE 98.8VWM 187.74VC MELF
товар відсутній
| JANTX1N6169US |
|
Виробник: Microchip Technology
Description: TVS DIODE 98.8VWM 187.74VC MELF
Description: TVS DIODE 98.8VWM 187.74VC MELF
товар відсутній
| JANTX1N6133US |
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Виробник: Microchip Technology
Description: TVS DIODE 98.8VWM 187.74VC MELF
Description: TVS DIODE 98.8VWM 187.74VC MELF
товар відсутній
| JANTXV1N6169US/TR |
Виробник: Microchip Technology
Description: TVS DIODE 98.8VWM 187.74VC MELF
Description: TVS DIODE 98.8VWM 187.74VC MELF
товар відсутній
| JANTX1N6133 |
|
Виробник: Microchip Technology
Description: TVS DIODE 98.8VWM 187.74VC AXIAL
Description: TVS DIODE 98.8VWM 187.74VC AXIAL
товар відсутній
| JANTXV1N6169US |
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Виробник: Microchip Technology
Description: TVS DIODE 98.8VWM 187.74VC MELF
Description: TVS DIODE 98.8VWM 187.74VC MELF
товар відсутній
| AT25FS040N-SH27-B |
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Виробник: Microchip Technology
Description: IC FLASH 4MBIT SPI 50MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH
Clock Frequency: 50 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 50µs
Memory Interface: SPI
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 4MBIT SPI 50MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH
Clock Frequency: 50 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 50µs
Memory Interface: SPI
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
товар відсутній
| AT25FS010N-SH27-B |
|
Виробник: Microchip Technology
Description: IC FLASH 1MBIT SPI 50MHZ 8SOIC
Description: IC FLASH 1MBIT SPI 50MHZ 8SOIC
товар відсутній