Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (336199) > Сторінка 1542 з 5604
Фото | Назва | Виробник | Інформація |
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1N5233/TR | Microchip Technology | Description: VOLTAGE REGULATOR |
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1N5233C | Microchip Technology | Description: VOLTAGE REGULATOR |
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1N5233DUR-1 | Microchip Technology | Description: VOLTAGE REGULATOR |
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PIC16LF1933T-I/ML | Microchip Technology |
Description: IC MCU 8BIT 7KB FLASH 28QFN Packaging: Tape & Reel (TR) Package / Case: 28-VQFN Exposed Pad Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 7KB (4K x 14) RAM Size: 256 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 256 x 8 Core Processor: PIC Data Converters: A/D 11x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V Connectivity: I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, LCD, POR, PWM, WDT Supplier Device Package: 28-QFN (6x6) Part Status: Active Number of I/O: 25 DigiKey Programmable: Not Verified |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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PIC16LF1933T-I/ML | Microchip Technology |
Description: IC MCU 8BIT 7KB FLASH 28QFN Packaging: Cut Tape (CT) Package / Case: 28-VQFN Exposed Pad Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 7KB (4K x 14) RAM Size: 256 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 256 x 8 Core Processor: PIC Data Converters: A/D 11x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V Connectivity: I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, LCD, POR, PWM, WDT Supplier Device Package: 28-QFN (6x6) Part Status: Active Number of I/O: 25 DigiKey Programmable: Not Verified |
на замовлення 3198 шт: термін постачання 21-31 дні (днів) |
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ATSAM4SD16CB-CFN | Microchip Technology |
Description: IC MCU 32BIT 1MB FLASH 100VFBGA Packaging: Tray Package / Case: 100-VFBGA Mounting Type: Surface Mount Speed: 120MHz Program Memory Size: 1MB (1M x 8) RAM Size: 160K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4 Data Converters: A/D 16x12b; D/A 2x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V Connectivity: EBI/EMI, I²C, IrDA, Memory Card, SPI, SSC, UART/USART, USB Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT Supplier Device Package: 100-VFBGA (7x7) Part Status: Active Number of I/O: 79 DigiKey Programmable: Not Verified |
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MIC2544-2YMTR | Microchip Technology |
Description: PROGRAMMABLE CURRENT LIMIT HIGH- Features: Status Flag Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: USB Switch Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 80mOhm Input Type: Non-Inverting Voltage - Load: 2.7V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.5A Ratio - Input:Output: 1:1 Supplier Device Package: 8-SOIC Fault Protection: Current Limiting (Adjustable), Over Temperature, Short Circuit Part Status: Active |
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CDLL5234A/TR | Microchip Technology | Description: VOLTAGE REGULATOR |
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CDLL5262D | Microchip Technology | Description: VOLTAGE REGULATOR |
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CDLL5256A/TR | Microchip Technology | Description: VOLTAGE REGULATOR |
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CDLL5224A/TR | Microchip Technology | Description: VOLTAGE REGULATOR |
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CDLL5222B/TR | Microchip Technology | Description: VOLTAGE REGULATOR |
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CDLL5249/TR | Microchip Technology | Description: VOLTAGE REGULATOR |
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CDLL5236/TR | Microchip Technology | Description: VOLTAGE REGULATOR |
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CDLL5249B/TR | Microchip Technology | Description: VOLTAGE REGULATOR |
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CDLL5260/TR | Microchip Technology | Description: VOLTAGE REGULATOR |
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2N3498 | Microchip Technology | Description: TRANS NPN 100V 0.5A TO39 |
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LXP1000-23-2 | Microchip Technology |
Description: SI PIN NON HERMETIC EPSM SMT Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Diode Type: PIN - 1 Pair Series Connection Operating Temperature: -55°C ~ 125°C Capacitance @ Vr, F: 0.28pF @ 5V, 1MHz Resistance @ If, F: 2.5Ohm @ 5mA, 100MHz Voltage - Peak Reverse (Max): 5V Supplier Device Package: SOT-23-3 Part Status: Active Current - Max: 5 mA Power Dissipation (Max): 250 mW |
на замовлення 146 шт: термін постачання 21-31 дні (днів) |
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SST25PF040CT-40E/NP18GVAO | Microchip Technology |
Description: IC FLASH 4MBIT SPI 40MHZ 8USON Packaging: Tape & Reel (TR) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.3V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 40 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
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SST25PF040C-40E/MF18GVAO | Microchip Technology |
Description: IC FLASH 4MBIT SPI 40MHZ 8WDFN Packaging: Tube Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.3V ~ 3.6V Technology: FLASH Clock Frequency: 40 MHz Memory Format: FLASH Supplier Device Package: 8-WDFN (5x6) Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
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SST25PF040CT-40E/MF18GVAO | Microchip Technology |
Description: IC FLASH 4MBIT SPI 40MHZ 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.3V ~ 3.6V Technology: FLASH Clock Frequency: 40 MHz Memory Format: FLASH Supplier Device Package: 8-WDFN (5x6) Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
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MCL5219-3.1BM5 | Microchip Technology | Description: 500MA-PEAK OUTPUT LDO REGULATOR |
на замовлення 150000 шт: термін постачання 21-31 дні (днів) |
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DSC2311KI2-R0060 | Microchip Technology | Description: MEMS OSC XO 2.25V-3.6V 6SMD |
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DSC2311KI2-R0060T | Microchip Technology | Description: MEMS OSC XO 2.25V-3.6V 6SMD |
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ATSAM4SD32CB-ANR | Microchip Technology |
Description: IC MCU 32BIT 2MB FLASH 100LQFP Packaging: Cut Tape (CT) Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 120MHz Program Memory Size: 2MB (2M x 8) RAM Size: 160K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4 Data Converters: A/D 16x12b; D/A 2x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V Connectivity: EBI/EMI, I²C, IrDA, Memory Card, SPI, SSC, UART/USART, USB Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT Supplier Device Package: 100-LQFP (14x14) Number of I/O: 79 DigiKey Programmable: Not Verified |
на замовлення 4728 шт: термін постачання 21-31 дні (днів) |
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DSC1001BI1-027.0000 | Microchip Technology | Description: MEMS OSC XO 27.0000MHZ CMOS SMD |
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MPLAD7.5KP36CA/TR | Microchip Technology |
Description: 36V, 5%, 8000W, BI, MINI-PLAD, S Packaging: Tape & Reel (TR) Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 129A Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: Mini-PLAD Bidirectional Channels: 1 Voltage - Breakdown (Min): 40V Voltage - Clamping (Max) @ Ipp: 58.1V Power - Peak Pulse: 7500W (7.5kW) Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
на замовлення 200 шт: термін постачання 21-31 дні (днів) |
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MPLAD7.5KP36CA/TR | Microchip Technology |
Description: 36V, 5%, 8000W, BI, MINI-PLAD, S Packaging: Cut Tape (CT) Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 129A Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: Mini-PLAD Bidirectional Channels: 1 Voltage - Breakdown (Min): 40V Voltage - Clamping (Max) @ Ipp: 58.1V Power - Peak Pulse: 7500W (7.5kW) Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
на замовлення 200 шт: термін постачання 21-31 дні (днів) |
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AT29LV040A-15JU-T | Microchip Technology |
Description: IC FLASH 4MBIT PARALLEL 32PLCC Packaging: Tape & Reel (TR) Package / Case: 32-LCC (J-Lead) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TC) Voltage - Supply: 3V ~ 3.6V Technology: FLASH Memory Format: FLASH Supplier Device Package: 32-PLCC (13.97x11.43) Write Cycle Time - Word, Page: 20ms Memory Interface: Parallel Access Time: 150 ns Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
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AT29LV040A-20JI | Microchip Technology |
Description: IC FLASH 4MBIT PARALLEL 32PLCC Packaging: Tube Package / Case: 32-LCC (J-Lead) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TC) Voltage - Supply: 3V ~ 3.6V Technology: FLASH Memory Format: FLASH Supplier Device Package: 32-PLCC (13.97x11.43) Write Cycle Time - Word, Page: 20ms Memory Interface: Parallel Access Time: 200 ns Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
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AT29LV040A-20JC | Microchip Technology |
Description: IC FLASH 4MBIT PARALLEL 32PLCC Packaging: Tube Package / Case: 32-LCC (J-Lead) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TC) Voltage - Supply: 3V ~ 3.6V Technology: FLASH Memory Format: FLASH Supplier Device Package: 32-PLCC (13.97x11.43) Write Cycle Time - Word, Page: 20ms Memory Interface: Parallel Access Time: 200 ns Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
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AT29LV040A-20TC | Microchip Technology |
Description: IC FLASH 4MBIT PARALLEL 32TSOP Packaging: Tray Package / Case: 32-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TC) Voltage - Supply: 3V ~ 3.6V Technology: FLASH Memory Format: FLASH Supplier Device Package: 32-TSOP Write Cycle Time - Word, Page: 20ms Memory Interface: Parallel Access Time: 200 ns Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
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AT29LV040A-15TC | Microchip Technology |
Description: IC FLASH 4MBIT PARALLEL 32TSOP Packaging: Tray Package / Case: 32-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TC) Voltage - Supply: 3V ~ 3.6V Technology: FLASH Memory Format: FLASH Supplier Device Package: 32-TSOP Write Cycle Time - Word, Page: 20ms Memory Interface: Parallel Access Time: 150 ns Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
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DSA2311KI2-R0002VAO | Microchip Technology | Description: MEMS TWO-OUTPUT, AUTOMOTIVE, -40 |
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DSA2311KL1-R0065TVAO | Microchip Technology | Description: MEMS TWO-OUTPUT AUTO -40C-105C 5 |
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Jantxv2N2432 | Microchip Technology |
Description: TRANS NPN 30V 100UA TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 175°C (TJ) Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V Supplier Device Package: TO-18 (TO-206AA) Grade: Military Part Status: Active Current - Collector (Ic) (Max): 100 µA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 300 mW Qualification: MIL-PRF-19500/313 |
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JAN2N2432AUB/TR | Microchip Technology |
Description: TRANS NPN 30V 0.1A UB Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 200°C (TJ) Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V |
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JAN2N2432UB/TR | Microchip Technology |
Description: TRANS NPN 30V 0.1A UB Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 200°C (TJ) Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V |
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Jan2N2432AUB | Microchip Technology |
Description: TRANS NPN 30V 0.1A UB Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 200°C (TJ) Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V |
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JAN2N2432UB | Microchip Technology |
Description: TRANS NPN 30V 0.1A UB Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 200°C (TJ) Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V |
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2N2432AUB/TR | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 360 mW |
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JANTXV2N2432UB/TR | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 360 mW |
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2N2432UB/TR | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 360 mW |
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JANTXV2N2432AUB/TR | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 360 mW |
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PIC16F18076-I/P | Microchip Technology | Description: IC MCU 8BIT 28KB FLASH 40DIP |
на замовлення 17 шт: термін постачання 21-31 дні (днів) |
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MSR2N2222AUB/TR | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
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JANSL2N2222AUB | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
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JANTX1N5616 | Microchip Technology |
Description: DIODE GEN PURP 400V 1A AXIAL Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 400 V |
на замовлення 49 шт: термін постачання 21-31 дні (днів) |
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JAN1N5616US | Microchip Technology |
Description: DIODE GEN PURP 400V 1A D-5A Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 400 V |
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JANTX1N5616US | Microchip Technology |
Description: DIODE GEN PURP 400V 1A D-5A Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 400 V |
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JAN1N5616/TR | Microchip Technology |
Description: DIODE GEN PURP 400V 1A A AXIAL Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 400 V |
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JAN1N5616 | Microchip Technology |
Description: DIODE GEN PURP 400V 1A AXIAL Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 400 V |
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JANTXV1N5616 | Microchip Technology |
Description: DIODE GEN PURP 400V 1A AXIAL Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 400 V |
на замовлення 79 шт: термін постачання 21-31 дні (днів) |
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JANTX1N5616US/TR | Microchip Technology |
Description: DIODE GEN PURP 400V 1A D-5A Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 400 V |
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JANTXV1N5616US/TR | Microchip Technology |
Description: DIODE GEN PURP 400V 1A D-5A Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 400 V |
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JAN1N5616US/TR | Microchip Technology |
Description: DIODE GEN PURP 400V 1A D-5A Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 400 V |
товар відсутній |
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JANS1N5616/TR | Microchip Technology |
Description: DIODE GEN PURP 400V 1A A AXIAL Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 400 V |
товар відсутній |
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JANTXV1N5616US | Microchip Technology |
Description: DIODE GEN PURP 400V 1A D-5A Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 200°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 400 V |
товар відсутній |
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JANS1N5616 | Microchip Technology |
Description: DIODE GEN PURP 400V 1A A AXIAL Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 400 V |
товар відсутній |
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JANS1N5616US | Microchip Technology |
Description: DIODE GEN PURP 400V 1A A SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A |
товар відсутній |
PIC16LF1933T-I/ML |
Виробник: Microchip Technology
Description: IC MCU 8BIT 7KB FLASH 28QFN
Packaging: Tape & Reel (TR)
Package / Case: 28-VQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 7KB (4K x 14)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 11x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, LCD, POR, PWM, WDT
Supplier Device Package: 28-QFN (6x6)
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 7KB FLASH 28QFN
Packaging: Tape & Reel (TR)
Package / Case: 28-VQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 7KB (4K x 14)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 11x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, LCD, POR, PWM, WDT
Supplier Device Package: 28-QFN (6x6)
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1600+ | 133.85 грн |
PIC16LF1933T-I/ML |
Виробник: Microchip Technology
Description: IC MCU 8BIT 7KB FLASH 28QFN
Packaging: Cut Tape (CT)
Package / Case: 28-VQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 7KB (4K x 14)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 11x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, LCD, POR, PWM, WDT
Supplier Device Package: 28-QFN (6x6)
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 7KB FLASH 28QFN
Packaging: Cut Tape (CT)
Package / Case: 28-VQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 7KB (4K x 14)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 11x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, LCD, POR, PWM, WDT
Supplier Device Package: 28-QFN (6x6)
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
на замовлення 3198 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 160.66 грн |
25+ | 142.04 грн |
100+ | 128.89 грн |
ATSAM4SD16CB-CFN |
Виробник: Microchip Technology
Description: IC MCU 32BIT 1MB FLASH 100VFBGA
Packaging: Tray
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 160K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: EBI/EMI, I²C, IrDA, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 100-VFBGA (7x7)
Part Status: Active
Number of I/O: 79
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1MB FLASH 100VFBGA
Packaging: Tray
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 160K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: EBI/EMI, I²C, IrDA, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 100-VFBGA (7x7)
Part Status: Active
Number of I/O: 79
DigiKey Programmable: Not Verified
товар відсутній
MIC2544-2YMTR |
Виробник: Microchip Technology
Description: PROGRAMMABLE CURRENT LIMIT HIGH-
Features: Status Flag
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Adjustable), Over Temperature, Short Circuit
Part Status: Active
Description: PROGRAMMABLE CURRENT LIMIT HIGH-
Features: Status Flag
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Adjustable), Over Temperature, Short Circuit
Part Status: Active
товар відсутній
LXP1000-23-2 |
Виробник: Microchip Technology
Description: SI PIN NON HERMETIC EPSM SMT
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 0.28pF @ 5V, 1MHz
Resistance @ If, F: 2.5Ohm @ 5mA, 100MHz
Voltage - Peak Reverse (Max): 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Max: 5 mA
Power Dissipation (Max): 250 mW
Description: SI PIN NON HERMETIC EPSM SMT
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 0.28pF @ 5V, 1MHz
Resistance @ If, F: 2.5Ohm @ 5mA, 100MHz
Voltage - Peak Reverse (Max): 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Max: 5 mA
Power Dissipation (Max): 250 mW
на замовлення 146 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 381.04 грн |
SST25PF040CT-40E/NP18GVAO |
Виробник: Microchip Technology
Description: IC FLASH 4MBIT SPI 40MHZ 8USON
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 40 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 4MBIT SPI 40MHZ 8USON
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 40 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
товар відсутній
SST25PF040C-40E/MF18GVAO |
Виробник: Microchip Technology
Description: IC FLASH 4MBIT SPI 40MHZ 8WDFN
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Technology: FLASH
Clock Frequency: 40 MHz
Memory Format: FLASH
Supplier Device Package: 8-WDFN (5x6)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 4MBIT SPI 40MHZ 8WDFN
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Technology: FLASH
Clock Frequency: 40 MHz
Memory Format: FLASH
Supplier Device Package: 8-WDFN (5x6)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
товар відсутній
SST25PF040CT-40E/MF18GVAO |
Виробник: Microchip Technology
Description: IC FLASH 4MBIT SPI 40MHZ 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Technology: FLASH
Clock Frequency: 40 MHz
Memory Format: FLASH
Supplier Device Package: 8-WDFN (5x6)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 4MBIT SPI 40MHZ 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Technology: FLASH
Clock Frequency: 40 MHz
Memory Format: FLASH
Supplier Device Package: 8-WDFN (5x6)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
товар відсутній
MCL5219-3.1BM5 |
Виробник: Microchip Technology
Description: 500MA-PEAK OUTPUT LDO REGULATOR
Description: 500MA-PEAK OUTPUT LDO REGULATOR
на замовлення 150000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
760+ | 28.58 грн |
DSC2311KI2-R0060 |
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6SMD
Description: MEMS OSC XO 2.25V-3.6V 6SMD
товар відсутній
DSC2311KI2-R0060T |
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6SMD
Description: MEMS OSC XO 2.25V-3.6V 6SMD
товар відсутній
ATSAM4SD32CB-ANR |
Виробник: Microchip Technology
Description: IC MCU 32BIT 2MB FLASH 100LQFP
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 160K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: EBI/EMI, I²C, IrDA, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 79
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 2MB FLASH 100LQFP
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 160K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: EBI/EMI, I²C, IrDA, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 79
DigiKey Programmable: Not Verified
на замовлення 4728 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 901.43 грн |
25+ | 788.52 грн |
100+ | 730.3 грн |
DSC1001BI1-027.0000 |
Виробник: Microchip Technology
Description: MEMS OSC XO 27.0000MHZ CMOS SMD
Description: MEMS OSC XO 27.0000MHZ CMOS SMD
товар відсутній
MPLAD7.5KP36CA/TR |
Виробник: Microchip Technology
Description: 36V, 5%, 8000W, BI, MINI-PLAD, S
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 129A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: Mini-PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: 36V, 5%, 8000W, BI, MINI-PLAD, S
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 129A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: Mini-PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
на замовлення 200 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
200+ | 372.21 грн |
MPLAD7.5KP36CA/TR |
Виробник: Microchip Technology
Description: 36V, 5%, 8000W, BI, MINI-PLAD, S
Packaging: Cut Tape (CT)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 129A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: Mini-PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: 36V, 5%, 8000W, BI, MINI-PLAD, S
Packaging: Cut Tape (CT)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 129A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: Mini-PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
на замовлення 200 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 400.95 грн |
100+ | 358.42 грн |
AT29LV040A-15JU-T |
Виробник: Microchip Technology
Description: IC FLASH 4MBIT PARALLEL 32PLCC
Packaging: Tape & Reel (TR)
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH
Memory Format: FLASH
Supplier Device Package: 32-PLCC (13.97x11.43)
Write Cycle Time - Word, Page: 20ms
Memory Interface: Parallel
Access Time: 150 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 4MBIT PARALLEL 32PLCC
Packaging: Tape & Reel (TR)
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH
Memory Format: FLASH
Supplier Device Package: 32-PLCC (13.97x11.43)
Write Cycle Time - Word, Page: 20ms
Memory Interface: Parallel
Access Time: 150 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
товар відсутній
AT29LV040A-20JI |
Виробник: Microchip Technology
Description: IC FLASH 4MBIT PARALLEL 32PLCC
Packaging: Tube
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH
Memory Format: FLASH
Supplier Device Package: 32-PLCC (13.97x11.43)
Write Cycle Time - Word, Page: 20ms
Memory Interface: Parallel
Access Time: 200 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 4MBIT PARALLEL 32PLCC
Packaging: Tube
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH
Memory Format: FLASH
Supplier Device Package: 32-PLCC (13.97x11.43)
Write Cycle Time - Word, Page: 20ms
Memory Interface: Parallel
Access Time: 200 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
товар відсутній
AT29LV040A-20JC |
Виробник: Microchip Technology
Description: IC FLASH 4MBIT PARALLEL 32PLCC
Packaging: Tube
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH
Memory Format: FLASH
Supplier Device Package: 32-PLCC (13.97x11.43)
Write Cycle Time - Word, Page: 20ms
Memory Interface: Parallel
Access Time: 200 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 4MBIT PARALLEL 32PLCC
Packaging: Tube
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH
Memory Format: FLASH
Supplier Device Package: 32-PLCC (13.97x11.43)
Write Cycle Time - Word, Page: 20ms
Memory Interface: Parallel
Access Time: 200 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
товар відсутній
AT29LV040A-20TC |
Виробник: Microchip Technology
Description: IC FLASH 4MBIT PARALLEL 32TSOP
Packaging: Tray
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH
Memory Format: FLASH
Supplier Device Package: 32-TSOP
Write Cycle Time - Word, Page: 20ms
Memory Interface: Parallel
Access Time: 200 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 4MBIT PARALLEL 32TSOP
Packaging: Tray
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH
Memory Format: FLASH
Supplier Device Package: 32-TSOP
Write Cycle Time - Word, Page: 20ms
Memory Interface: Parallel
Access Time: 200 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
товар відсутній
AT29LV040A-15TC |
Виробник: Microchip Technology
Description: IC FLASH 4MBIT PARALLEL 32TSOP
Packaging: Tray
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH
Memory Format: FLASH
Supplier Device Package: 32-TSOP
Write Cycle Time - Word, Page: 20ms
Memory Interface: Parallel
Access Time: 150 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 4MBIT PARALLEL 32TSOP
Packaging: Tray
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH
Memory Format: FLASH
Supplier Device Package: 32-TSOP
Write Cycle Time - Word, Page: 20ms
Memory Interface: Parallel
Access Time: 150 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
товар відсутній
DSA2311KI2-R0002VAO |
Виробник: Microchip Technology
Description: MEMS TWO-OUTPUT, AUTOMOTIVE, -40
Description: MEMS TWO-OUTPUT, AUTOMOTIVE, -40
товар відсутній
DSA2311KL1-R0065TVAO |
Виробник: Microchip Technology
Description: MEMS TWO-OUTPUT AUTO -40C-105C 5
Description: MEMS TWO-OUTPUT AUTO -40C-105C 5
товар відсутній
Jantxv2N2432 |
Виробник: Microchip Technology
Description: TRANS NPN 30V 100UA TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 175°C (TJ)
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 100 µA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
Qualification: MIL-PRF-19500/313
Description: TRANS NPN 30V 100UA TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 175°C (TJ)
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 100 µA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
Qualification: MIL-PRF-19500/313
товар відсутній
JAN2N2432AUB/TR |
Виробник: Microchip Technology
Description: TRANS NPN 30V 0.1A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Description: TRANS NPN 30V 0.1A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
товар відсутній
JAN2N2432UB/TR |
Виробник: Microchip Technology
Description: TRANS NPN 30V 0.1A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Description: TRANS NPN 30V 0.1A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
товар відсутній
Jan2N2432AUB |
Виробник: Microchip Technology
Description: TRANS NPN 30V 0.1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Description: TRANS NPN 30V 0.1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
товар відсутній
JAN2N2432UB |
Виробник: Microchip Technology
Description: TRANS NPN 30V 0.1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Description: TRANS NPN 30V 0.1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
товар відсутній
2N2432AUB/TR |
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 360 mW
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 360 mW
товар відсутній
JANTXV2N2432UB/TR |
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 360 mW
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 360 mW
товар відсутній
2N2432UB/TR |
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 360 mW
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 360 mW
товар відсутній
JANTXV2N2432AUB/TR |
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 360 mW
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 360 mW
товар відсутній
PIC16F18076-I/P |
Виробник: Microchip Technology
Description: IC MCU 8BIT 28KB FLASH 40DIP
Description: IC MCU 8BIT 28KB FLASH 40DIP
на замовлення 17 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 263.75 грн |
MSR2N2222AUB/TR |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
товар відсутній
JANSL2N2222AUB |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
товар відсутній
JANTX1N5616 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
на замовлення 49 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 355.45 грн |
JAN1N5616US |
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 1A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Description: DIODE GEN PURP 400V 1A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
товар відсутній
JANTX1N5616US |
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 1A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Description: DIODE GEN PURP 400V 1A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
товар відсутній
JAN1N5616/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 1A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Description: DIODE GEN PURP 400V 1A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
товар відсутній
JAN1N5616 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
товар відсутній
JANTXV1N5616 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
на замовлення 79 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 952.61 грн |
JANTX1N5616US/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Description: DIODE GEN PURP 400V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
товар відсутній
JANTXV1N5616US/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Description: DIODE GEN PURP 400V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
товар відсутній
JAN1N5616US/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Description: DIODE GEN PURP 400V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
товар відсутній
JANS1N5616/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 1A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Description: DIODE GEN PURP 400V 1A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
товар відсутній
JANTXV1N5616US |
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 1A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Description: DIODE GEN PURP 400V 1A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
товар відсутній
JANS1N5616 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 1A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Description: DIODE GEN PURP 400V 1A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
товар відсутній
JANS1N5616US |
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 1A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Description: DIODE GEN PURP 400V 1A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
товар відсутній