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DSC2040FI2-B0021T Microchip Technology DSC2040%20Datasheet%20MKQBPD12042610-2.pdf Description: MEMS OSC AUTO LOWPWR -40C-85C
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MXLSMLG90CA Microchip Technology 10563-msml-datasheet Description: TVS DIODE 90VWM 146VC SMLG
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MXLSMLG90Ae3 Microchip Technology 10563-msml-datasheet Description: TVS DIODE 90VWM 146VC SMLG
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CD4742A CD4742A Microchip Technology 8368-cd4728a-cd4764a-datasheet Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: Die
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
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24AA08HT-I/OT 24AA08HT-I/OT Microchip Technology 20002084B.pdf Description: IC EEPROM 8KBIT I2C SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-5
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 256 x 8 x 4
DigiKey Programmable: Not Verified
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24AA08HT-I/OT 24AA08HT-I/OT Microchip Technology 20002084B.pdf Description: IC EEPROM 8KBIT I2C SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-5
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 256 x 8 x 4
DigiKey Programmable: Not Verified
на замовлення 1748 шт:
термін постачання 21-31 дні (днів)
13+26.63 грн
25+23.00 грн
100+22.21 грн
Мінімальне замовлення: 13
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JANTXV1N5416US/TR JANTXV1N5416US/TR Microchip Technology Description: DIODE GEN PURP 100V 3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/411
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JANTX1N5416US/TR JANTX1N5416US/TR Microchip Technology Description: DIODE GEN PURP 100V 3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/411
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JANS1N5416/TR JANS1N5416/TR Microchip Technology 124360-lds-0231-datasheet Description: DIODE GEN PURP 100V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Qualification: MIL-PRF-19500/411
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JANS1N5416 JANS1N5416 Microchip Technology Description: DIODE GEN PURP 100V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Qualification: MIL-PRF-19500/411
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JANS1N5416US/TR JANS1N5416US/TR Microchip Technology Description: DIODE GEN PURP 100V 3A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Qualification: MIL-PRF-19500/411
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1N5416US/TR 1N5416US/TR Microchip Technology Description: DIODE GEN PURP 100V 3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
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JANTXV1N5416/TR JANTXV1N5416/TR Microchip Technology 124360-lds-0231-datasheet Description: DIODE GEN PURP 100V 3A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/411
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JAN1N5416US/TR JAN1N5416US/TR Microchip Technology Description: DIODE STANDARD 100V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/411
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JANS1N5416US JANS1N5416US Microchip Technology Description: DIODE GEN PURP 100V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Qualification: MIL-PRF-19500/411
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UTR3310 Microchip Technology Description: UFR,FRR
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UTR3310/TR Microchip Technology Description: UFR,FRR
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2N5853 Microchip Technology Description: TRANS PNP 80V 10A TO-61
Packaging: Bulk
Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-61
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 115 W
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2N5861 Microchip Technology Description: SMALL-SIGNAL BJT
Packaging: Bulk
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2N5854 Microchip Technology Description: TRANS PNP 80V 10A TO-61
Packaging: Bulk
Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-61
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 115 W
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2N6511 2N6511 Microchip Technology Description: TRANS PNP 250V 7A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 800µA, 4mA
Supplier Device Package: TO-204AA (TO-3)
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 120 W
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AT25160A-10TU-2.7-T AT25160A-10TU-2.7-T Microchip Technology doc3347.pdf Description: IC EEPROM 16KBIT SPI 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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UM6002SM Microchip Technology Description: SI PPIN HERMETIC MELF
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UM6002B Microchip Technology Description: SI PPIN HERMETIC GLASS AXIAL
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UM6001A Microchip Technology Description: SI PPIN HERMETIC SEAL
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UM6001B Microchip Technology Description: SI PPIN HERMETIC GLASS AXIAL
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UM6010A Microchip Technology Description: SI PPIN HERMETIC SEAL
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UM6010E Microchip Technology Description: SI PPIN HERMETIC GLASS AXIAL
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SG7815AL-TR Microchip Technology 11152-sg7800-datasheet Description: IC REG LINEAR 15V 1.5A 20CLCC
Packaging: Tape & Reel (TR)
Package / Case: 20-CLCC
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -55°C ~ 125°C (TA)
Output Configuration: Positive
Voltage - Input (Max): 50V
Number of Regulators: 1
Supplier Device Package: 20-CLCC (8.89x8.89)
Voltage - Output (Min/Fixed): 15V
Control Features: Enable
Grade: Military
Part Status: Active
Voltage Dropout (Max): 2.5V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 7 mA
Qualification: MIL-STD-883
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SG7815AL-DESC Microchip Technology 11152-sg7800-datasheet Description: IC REG LINEAR 15V 1.5A 20CLCC
Packaging: Tray
Package / Case: 20-CLCC
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -55°C ~ 125°C (TA)
Output Configuration: Positive
Voltage - Input (Max): 50V
Number of Regulators: 1
Supplier Device Package: 20-CLCC (8.89x8.89)
Voltage - Output (Min/Fixed): 15V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 2.5V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 7 mA
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SG7815AL-DESC-TR Microchip Technology 11152-sg7800-datasheet Description: IC REG LINEAR 15V 1.5A 20CLCC
Packaging: Tape & Reel (TR)
Package / Case: 20-CLCC
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -55°C ~ 125°C (TA)
Output Configuration: Positive
Voltage - Input (Max): 50V
Number of Regulators: 1
Supplier Device Package: 20-CLCC (8.89x8.89)
Voltage - Output (Min/Fixed): 15V
Control Features: Enable
Grade: Military
Part Status: Active
Voltage Dropout (Max): 2.5V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 7 mA
Qualification: MIL-STD-883
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SG7815AL Microchip Technology 11152-sg7800-datasheet Description: IC REG LINEAR 15V 1.5A 20CLCC
Packaging: Tray
Package / Case: 20-CLCC
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -55°C ~ 125°C (TA)
Output Configuration: Positive
Voltage - Input (Max): 50V
Number of Regulators: 1
Supplier Device Package: 20-CLCC (8.89x8.89)
Voltage - Output (Min/Fixed): 15V
Control Features: Enable
Grade: Military
Part Status: Active
Voltage Dropout (Max): 2.5V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 7 mA
Qualification: MIL-STD-883
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TC1014-2.8VCT713 TC1014-2.8VCT713 Microchip Technology TC1014-1015-1185-50-mA-100-mA-and-150-mA-CMOS-LDOs-with-Shutdown-and-Reference-Bypass-Data-Sheet-DS20001335.pdf Description: IC REG LINEAR 2.8V 50MA SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 50mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 64dB (1kHz)
Voltage Dropout (Max): 0.12V @ 50mA
Protection Features: Over Current, Over Temperature
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TC1014-2.8VCT713 TC1014-2.8VCT713 Microchip Technology TC1014-1015-1185-50-mA-100-mA-and-150-mA-CMOS-LDOs-with-Shutdown-and-Reference-Bypass-Data-Sheet-DS20001335.pdf Description: IC REG LINEAR 2.8V 50MA SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 50mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 64dB (1kHz)
Voltage Dropout (Max): 0.12V @ 50mA
Protection Features: Over Current, Over Temperature
на замовлення 42 шт:
термін постачання 21-31 дні (днів)
10+32.28 грн
25+24.58 грн
Мінімальне замовлення: 10
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MSASC25W100K Microchip Technology MSASC25W100K(R).pdf Description: DIODE SCHOTTKY 100V 25A 2THINKEY
Packaging: Bulk
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 25A
Supplier Device Package: 2-ThinKey™
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 25 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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MSASC25W100K/TR Microchip Technology Description: DIODE SCHOTTKY 100V 25A 2THINKEY
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 25A
Supplier Device Package: 2-ThinKey™
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 25 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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MSASC25W100KV Microchip Technology Description: DIODE SCHOTTKY 100V 25A THINKEY2
Packaging: Bulk
Package / Case: ThinKey™2
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 25A
Supplier Device Package: ThinKey™2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 25 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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MSASC25W100KV/TR Microchip Technology Description: DIODE SCHOTTKY 100V 25A THINKEY2
Packaging: Tape & Reel (TR)
Package / Case: ThinKey™2
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 25A
Supplier Device Package: ThinKey™2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 25 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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MSASC25W100KS Microchip Technology Description: DIODE SCHOTTKY 100V 25A THINKEY2
Packaging: Bulk
Package / Case: ThinKey™2
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 25A
Supplier Device Package: ThinKey™2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 25 A
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MSASC25W100KS/TR Microchip Technology Description: DIODE SCHOTTKY 100V 25A THINKEY2
Packaging: Tape & Reel (TR)
Package / Case: ThinKey™2
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 25A
Supplier Device Package: ThinKey™2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 25 A
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MSAC150W100KV Microchip Technology Description: POWER SCHOTTKY
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MSASC45W100K/TR Microchip Technology Description: POWER SCHOTTKY
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MSAC150W100KV/TR Microchip Technology Description: POWER SCHOTTKY
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MSASC45W100K Microchip Technology Description: POWER SCHOTTKY
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PIC16LF19186T-I/PT PIC16LF19186T-I/PT Microchip Technology PIC16LF19155-56-75-76-85-86-Data-Sheet-40001923B.pdf Description: IC MCU 8BIT 28KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 28KB (16K x 14)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 39x12b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 43
DigiKey Programmable: Not Verified
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
1600+163.19 грн
Мінімальне замовлення: 1600
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PIC16LF19186T-I/PT PIC16LF19186T-I/PT Microchip Technology PIC16LF19155-56-75-76-85-86-Data-Sheet-40001923B.pdf Description: IC MCU 8BIT 28KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 28KB (16K x 14)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 39x12b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 43
DigiKey Programmable: Not Verified
на замовлення 3195 шт:
термін постачання 21-31 дні (днів)
2+196.08 грн
25+173.15 грн
100+157.14 грн
Мінімальне замовлення: 2
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1N5231/TR 1N5231/TR Microchip Technology Description: DIODE ZENER 5.1V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1.9 V
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1N5231D/TR 1N5231D/TR Microchip Technology Description: DIODE ZENER 5.1V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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1N5231D-1/TR 1N5231D-1/TR Microchip Technology Description: DIODE ZENER 5.1V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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1N5231D 1N5231D Microchip Technology Description: DIODE ZENER 5.1V 500MW DO204AH
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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1N5231D-1 1N5231D-1 Microchip Technology Description: DIODE ZENER 5.1V 500MW DO204AH
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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JANSL2N5004 Microchip Technology Description: TRANS NPN 80V 10A TO59
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
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JANSL2N5002 Microchip Technology Description: TRANS NPN 80V 50UA TO59
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2N3850 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Frequency - Transition: 20MHz
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
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2N3851 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
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2N3853 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 30 W
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2N3852 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200µA, 1mA
Frequency - Transition: 20MHz
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 30 W
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24CS512T-I/SN 24CS512T-I/SN Microchip Technology 24CS512-512-Kbit-3.4-MHz-I2C-Serial-EEPROM-with-128-Bit-Serial-Number-and-Enhanced-Software-Write-Protection.pdf Description: IC EEPROM 512KBIT I2C 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
на замовлення 3300 шт:
термін постачання 21-31 дні (днів)
3300+89.91 грн
Мінімальне замовлення: 3300
В кошику  од. на суму  грн.
24CS512T-I/SN 24CS512T-I/SN Microchip Technology 24CS512-512-Kbit-3.4-MHz-I2C-Serial-EEPROM-with-128-Bit-Serial-Number-and-Enhanced-Software-Write-Protection.pdf Description: IC EEPROM 512KBIT I2C 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
на замовлення 6360 шт:
термін постачання 21-31 дні (днів)
4+98.44 грн
25+90.41 грн
100+86.57 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
24CS512-E/SM 24CS512-E/SM Microchip Technology 24CS512-512-Kbit-3.4-MHz-I2C-Serial-EEPROM-with-128-Bit-Serial-Number-and-Enhanced-Software-Write-Protection.pdf Description: IC EEPROM 512KBIT I2C 8SOIJ
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIJ
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
на замовлення 241 шт:
термін постачання 21-31 дні (днів)
3+111.35 грн
25+103.44 грн
100+98.84 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DSC2040FI2-B0021T DSC2040%20Datasheet%20MKQBPD12042610-2.pdf
Виробник: Microchip Technology
Description: MEMS OSC AUTO LOWPWR -40C-85C
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MXLSMLG90CA 10563-msml-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 90VWM 146VC SMLG
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MXLSMLG90Ae3 10563-msml-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 90VWM 146VC SMLG
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CD4742A 8368-cd4728a-cd4764a-datasheet
CD4742A
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: Die
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
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24AA08HT-I/OT 20002084B.pdf
24AA08HT-I/OT
Виробник: Microchip Technology
Description: IC EEPROM 8KBIT I2C SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-5
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 256 x 8 x 4
DigiKey Programmable: Not Verified
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24AA08HT-I/OT 20002084B.pdf
24AA08HT-I/OT
Виробник: Microchip Technology
Description: IC EEPROM 8KBIT I2C SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-5
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 256 x 8 x 4
DigiKey Programmable: Not Verified
на замовлення 1748 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
13+26.63 грн
25+23.00 грн
100+22.21 грн
Мінімальне замовлення: 13
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JANTXV1N5416US/TR
JANTXV1N5416US/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/411
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JANTX1N5416US/TR
JANTX1N5416US/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/411
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JANS1N5416/TR 124360-lds-0231-datasheet
JANS1N5416/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Qualification: MIL-PRF-19500/411
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JANS1N5416
JANS1N5416
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Qualification: MIL-PRF-19500/411
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JANS1N5416US/TR
JANS1N5416US/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 3A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Qualification: MIL-PRF-19500/411
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1N5416US/TR
1N5416US/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
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JANTXV1N5416/TR 124360-lds-0231-datasheet
JANTXV1N5416/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 3A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/411
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JAN1N5416US/TR
JAN1N5416US/TR
Виробник: Microchip Technology
Description: DIODE STANDARD 100V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/411
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JANS1N5416US
JANS1N5416US
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Qualification: MIL-PRF-19500/411
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UTR3310
Виробник: Microchip Technology
Description: UFR,FRR
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UTR3310/TR
Виробник: Microchip Technology
Description: UFR,FRR
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2N5853
Виробник: Microchip Technology
Description: TRANS PNP 80V 10A TO-61
Packaging: Bulk
Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-61
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 115 W
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2N5861
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Bulk
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2N5854
Виробник: Microchip Technology
Description: TRANS PNP 80V 10A TO-61
Packaging: Bulk
Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-61
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 115 W
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2N6511
2N6511
Виробник: Microchip Technology
Description: TRANS PNP 250V 7A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 800µA, 4mA
Supplier Device Package: TO-204AA (TO-3)
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 120 W
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AT25160A-10TU-2.7-T doc3347.pdf
AT25160A-10TU-2.7-T
Виробник: Microchip Technology
Description: IC EEPROM 16KBIT SPI 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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UM6002SM
Виробник: Microchip Technology
Description: SI PPIN HERMETIC MELF
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UM6002B
Виробник: Microchip Technology
Description: SI PPIN HERMETIC GLASS AXIAL
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UM6001A
Виробник: Microchip Technology
Description: SI PPIN HERMETIC SEAL
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UM6001B
Виробник: Microchip Technology
Description: SI PPIN HERMETIC GLASS AXIAL
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UM6010A
Виробник: Microchip Technology
Description: SI PPIN HERMETIC SEAL
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UM6010E
Виробник: Microchip Technology
Description: SI PPIN HERMETIC GLASS AXIAL
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SG7815AL-TR 11152-sg7800-datasheet
Виробник: Microchip Technology
Description: IC REG LINEAR 15V 1.5A 20CLCC
Packaging: Tape & Reel (TR)
Package / Case: 20-CLCC
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -55°C ~ 125°C (TA)
Output Configuration: Positive
Voltage - Input (Max): 50V
Number of Regulators: 1
Supplier Device Package: 20-CLCC (8.89x8.89)
Voltage - Output (Min/Fixed): 15V
Control Features: Enable
Grade: Military
Part Status: Active
Voltage Dropout (Max): 2.5V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 7 mA
Qualification: MIL-STD-883
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SG7815AL-DESC 11152-sg7800-datasheet
Виробник: Microchip Technology
Description: IC REG LINEAR 15V 1.5A 20CLCC
Packaging: Tray
Package / Case: 20-CLCC
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -55°C ~ 125°C (TA)
Output Configuration: Positive
Voltage - Input (Max): 50V
Number of Regulators: 1
Supplier Device Package: 20-CLCC (8.89x8.89)
Voltage - Output (Min/Fixed): 15V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 2.5V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 7 mA
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SG7815AL-DESC-TR 11152-sg7800-datasheet
Виробник: Microchip Technology
Description: IC REG LINEAR 15V 1.5A 20CLCC
Packaging: Tape & Reel (TR)
Package / Case: 20-CLCC
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -55°C ~ 125°C (TA)
Output Configuration: Positive
Voltage - Input (Max): 50V
Number of Regulators: 1
Supplier Device Package: 20-CLCC (8.89x8.89)
Voltage - Output (Min/Fixed): 15V
Control Features: Enable
Grade: Military
Part Status: Active
Voltage Dropout (Max): 2.5V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 7 mA
Qualification: MIL-STD-883
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SG7815AL 11152-sg7800-datasheet
Виробник: Microchip Technology
Description: IC REG LINEAR 15V 1.5A 20CLCC
Packaging: Tray
Package / Case: 20-CLCC
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -55°C ~ 125°C (TA)
Output Configuration: Positive
Voltage - Input (Max): 50V
Number of Regulators: 1
Supplier Device Package: 20-CLCC (8.89x8.89)
Voltage - Output (Min/Fixed): 15V
Control Features: Enable
Grade: Military
Part Status: Active
Voltage Dropout (Max): 2.5V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 7 mA
Qualification: MIL-STD-883
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TC1014-2.8VCT713 TC1014-1015-1185-50-mA-100-mA-and-150-mA-CMOS-LDOs-with-Shutdown-and-Reference-Bypass-Data-Sheet-DS20001335.pdf
TC1014-2.8VCT713
Виробник: Microchip Technology
Description: IC REG LINEAR 2.8V 50MA SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 50mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 64dB (1kHz)
Voltage Dropout (Max): 0.12V @ 50mA
Protection Features: Over Current, Over Temperature
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TC1014-2.8VCT713 TC1014-1015-1185-50-mA-100-mA-and-150-mA-CMOS-LDOs-with-Shutdown-and-Reference-Bypass-Data-Sheet-DS20001335.pdf
TC1014-2.8VCT713
Виробник: Microchip Technology
Description: IC REG LINEAR 2.8V 50MA SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 50mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 64dB (1kHz)
Voltage Dropout (Max): 0.12V @ 50mA
Protection Features: Over Current, Over Temperature
на замовлення 42 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+32.28 грн
25+24.58 грн
Мінімальне замовлення: 10
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MSASC25W100K MSASC25W100K(R).pdf
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 100V 25A 2THINKEY
Packaging: Bulk
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 25A
Supplier Device Package: 2-ThinKey™
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 25 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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MSASC25W100K/TR
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 100V 25A 2THINKEY
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 25A
Supplier Device Package: 2-ThinKey™
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 25 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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MSASC25W100KV
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 100V 25A THINKEY2
Packaging: Bulk
Package / Case: ThinKey™2
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 25A
Supplier Device Package: ThinKey™2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 25 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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MSASC25W100KV/TR
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 100V 25A THINKEY2
Packaging: Tape & Reel (TR)
Package / Case: ThinKey™2
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 25A
Supplier Device Package: ThinKey™2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 25 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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MSASC25W100KS
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 100V 25A THINKEY2
Packaging: Bulk
Package / Case: ThinKey™2
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 25A
Supplier Device Package: ThinKey™2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 25 A
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MSASC25W100KS/TR
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 100V 25A THINKEY2
Packaging: Tape & Reel (TR)
Package / Case: ThinKey™2
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 25A
Supplier Device Package: ThinKey™2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 25 A
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MSAC150W100KV
Виробник: Microchip Technology
Description: POWER SCHOTTKY
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MSASC45W100K/TR
Виробник: Microchip Technology
Description: POWER SCHOTTKY
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MSAC150W100KV/TR
Виробник: Microchip Technology
Description: POWER SCHOTTKY
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MSASC45W100K
Виробник: Microchip Technology
Description: POWER SCHOTTKY
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PIC16LF19186T-I/PT PIC16LF19155-56-75-76-85-86-Data-Sheet-40001923B.pdf
PIC16LF19186T-I/PT
Виробник: Microchip Technology
Description: IC MCU 8BIT 28KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 28KB (16K x 14)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 39x12b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 43
DigiKey Programmable: Not Verified
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1600+163.19 грн
Мінімальне замовлення: 1600
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PIC16LF19186T-I/PT PIC16LF19155-56-75-76-85-86-Data-Sheet-40001923B.pdf
PIC16LF19186T-I/PT
Виробник: Microchip Technology
Description: IC MCU 8BIT 28KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 28KB (16K x 14)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 39x12b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 43
DigiKey Programmable: Not Verified
на замовлення 3195 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+196.08 грн
25+173.15 грн
100+157.14 грн
Мінімальне замовлення: 2
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1N5231/TR
1N5231/TR
Виробник: Microchip Technology
Description: DIODE ZENER 5.1V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1.9 V
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1N5231D/TR
1N5231D/TR
Виробник: Microchip Technology
Description: DIODE ZENER 5.1V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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1N5231D-1/TR
1N5231D-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 5.1V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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1N5231D
1N5231D
Виробник: Microchip Technology
Description: DIODE ZENER 5.1V 500MW DO204AH
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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1N5231D-1
1N5231D-1
Виробник: Microchip Technology
Description: DIODE ZENER 5.1V 500MW DO204AH
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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JANSL2N5004
Виробник: Microchip Technology
Description: TRANS NPN 80V 10A TO59
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
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JANSL2N5002
Виробник: Microchip Technology
Description: TRANS NPN 80V 50UA TO59
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2N3850
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Frequency - Transition: 20MHz
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
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2N3851
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
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2N3853
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 30 W
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2N3852
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200µA, 1mA
Frequency - Transition: 20MHz
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 30 W
товару немає в наявності
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24CS512T-I/SN 24CS512-512-Kbit-3.4-MHz-I2C-Serial-EEPROM-with-128-Bit-Serial-Number-and-Enhanced-Software-Write-Protection.pdf
24CS512T-I/SN
Виробник: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
на замовлення 3300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3300+89.91 грн
Мінімальне замовлення: 3300
В кошику  од. на суму  грн.
24CS512T-I/SN 24CS512-512-Kbit-3.4-MHz-I2C-Serial-EEPROM-with-128-Bit-Serial-Number-and-Enhanced-Software-Write-Protection.pdf
24CS512T-I/SN
Виробник: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
на замовлення 6360 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+98.44 грн
25+90.41 грн
100+86.57 грн
Мінімальне замовлення: 4
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24CS512-E/SM 24CS512-512-Kbit-3.4-MHz-I2C-Serial-EEPROM-with-128-Bit-Serial-Number-and-Enhanced-Software-Write-Protection.pdf
24CS512-E/SM
Виробник: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8SOIJ
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIJ
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
на замовлення 241 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+111.35 грн
25+103.44 грн
100+98.84 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
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