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1N6626U Microchip Technology Description: UFR,FRR
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JANTXV1N6626U/TR Microchip Technology Description: UFR,FRR
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1N6626U/TR Microchip Technology Description: UFR,FRR
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1N6626/TR 1N6626/TR Microchip Technology 10973-sa7-57-datasheet Description: RECTIFIER UFR,FRR
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ATSAMD51P19A-AFT ATSAMD51P19A-AFT Microchip Technology SAM-D5x-E5x-Family-Silicon-Errata-and-Data-Sheet-Clarification-DS80000748.pdf Description: IC MCU 32BIT 512KB FLASH 128TQFP
Packaging: Tape & Reel (TR)
Package / Case: 128-TQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.63V
Connectivity: EBI/EMI, I2C, IrDA, LINbus, MMC/SD, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM
Supplier Device Package: 128-TQFP (14x14)
Grade: Automotive
Number of I/O: 99
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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ATSAMD51P19A-AFT ATSAMD51P19A-AFT Microchip Technology SAM-D5x-E5x-Family-Silicon-Errata-and-Data-Sheet-Clarification-DS80000748.pdf Description: IC MCU 32BIT 512KB FLASH 128TQFP
Packaging: Cut Tape (CT)
Package / Case: 128-TQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.63V
Connectivity: EBI/EMI, I2C, IrDA, LINbus, MMC/SD, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM
Supplier Device Package: 128-TQFP (14x14)
Grade: Automotive
Number of I/O: 99
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 727 шт:
термін постачання 21-31 дні (днів)
1+559.60 грн
25+493.39 грн
100+447.37 грн
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MCP6564-E/STVAO MCP6564-E/STVAO Microchip Technology MCP6561-1R-1U-2-4-1.8V-Low-Power-Push-Pull-Output-Comparator-DS20002139E.pdf Description: IC COMPARATOR 4 GEN PUR 14TSSOP
Packaging: Tube
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: CMOS, Push-Pull, TTL
Mounting Type: Surface Mount
Number of Elements: 4
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V
Supplier Device Package: 14-TSSOP
Propagation Delay (Max): 80ns
Current - Quiescent (Max): 130µA
Voltage - Input Offset (Max): 10mV @ 5.5V
Current - Input Bias (Max): 1pA @ 5.5V
Current - Output (Typ): 50mA
CMRR, PSRR (Typ): 66dB CMRR, 70dB PSRR
Hysteresis: 5mV
Grade: Automotive
Qualification: AEC-Q100
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MCP6567-E/MSVAO MCP6567-E/MSVAO Microchip Technology Description: IC COMPARATOR 2 GEN PUR 8MSOP
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: CMOS, Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V
Supplier Device Package: 8-MSOP
Propagation Delay (Max): 80ns
Current - Quiescent (Max): 130µA
Voltage - Input Offset (Max): 10mV @ 5.5V
Current - Input Bias (Max): 1pA @ 5.5V
Current - Output (Typ): 50mA
CMRR, PSRR (Typ): 66dB CMRR, 70dB PSRR
Hysteresis: 5mV
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MCP6564T-E/SLVAO MCP6564T-E/SLVAO Microchip Technology MCP6561-1R-1U-2-4-1.8V-Low-Power-Push-Pull-Output-Comparator-DS20002139E.pdf Description: IC COMPARATOR 4 GEN PUR 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: CMOS, Push-Pull, Rail-to-Rail, TTL
Mounting Type: Surface Mount
Number of Elements: 4
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V
Supplier Device Package: 14-SOIC
Propagation Delay (Max): 80ns
Current - Quiescent (Max): 130µA
Voltage - Input Offset (Max): 10mV @ 5.5V
Current - Input Bias (Max): 1pA @ 5.5V
Current - Output (Typ): 50mA
CMRR, PSRR (Typ): 66dB CMRR, 70dB PSRR
Hysteresis: 5mV
Grade: Automotive
Qualification: AEC-Q100
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MCP6567AT-E/UN MCP6567AT-E/UN Microchip Technology MCP6566-6R-6U-7-9-1.8V-Low-Power-Open-Drain-Output-Comparator-DS20002143G.pdf Description: IC COMP DUAL 1.8V OD 10MSOP
Packaging: Tape & Reel (TR)
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MCP6567AT-E/MF MCP6567AT-E/MF Microchip Technology MCP6566-6R-6U-7-9-1.8V-Low-Power-Open-Drain-Output-Comparator-DS20002143G.pdf Description: IC COMP DUAL 1.8V OD 10DFN
Packaging: Tape & Reel (TR)
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MCP6567A-E/MF MCP6567A-E/MF Microchip Technology MCP6566-6R-6U-7-9-1.8V-Low-Power-Open-Drain-Output-Comparator-DS20002143G.pdf Description: IC COMP DUAL 1.8V OD 10DFN
Packaging: Tube
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CDLL4473/TR CDLL4473/TR Microchip Technology Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 17.6 V
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TC51N2202ECBTR TC51N2202ECBTR Microchip Technology 21429C.pdf Description: IC SUPERVISOR 1 CHANNEL SOT23A-3
на замовлення 3041 шт:
термін постачання 21-31 дні (днів)
3+137.76 грн
25+110.38 грн
100+101.08 грн
Мінімальне замовлення: 3
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1N914UR-1/TR 1N914UR-1/TR Microchip Technology Description: DIODE GEN PURP 75V 200MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 1.5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
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MNS1N5822US MNS1N5822US Microchip Technology 131998-lds-0303-1.pdf Description: DIODE SCHOTTKY 40V 3A B SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Grade: Military
Qualification: MIL-PRF-19500/620
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JAN1N2844B Microchip Technology Description: ZENER DIODE
Packaging: Bulk
Tolerance: ±5%
Package / Case: TO-204AD
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: TO-204AD (TO-3)
Part Status: Active
Power - Max: 10 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 121.6 V
Grade: Military
Qualification: MIL-PRF-19500/114
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MX553NBF155M520-TR Microchip Technology MX553NBF155M520.pdf Description: XTAL OSC XO 155.5200MHZ LVPECL
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: LVPECL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.375V ~ 3.63V
Current - Supply (Max): 120mA
Height - Seated (Max): 0.055" (1.40mm)
Frequency: 155.52 MHz
Base Resonator: Crystal
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MX553NBF155M520 Microchip Technology MX553NBF155M520.pdf Description: XTAL OSC XO 155.5200MHZ LVPECL
Packaging: Tube
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: LVPECL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.375V ~ 3.63V
Current - Supply (Max): 120mA
Height - Seated (Max): 0.055" (1.40mm)
Frequency: 155.52 MHz
Base Resonator: Crystal
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JANKCBL2N3440 JANKCBL2N3440 Microchip Technology Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
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JANSM2N3440L JANSM2N3440L Microchip Technology Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
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JANSD2N3440L JANSD2N3440L Microchip Technology Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
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MXLSMCJ36A MXLSMCJ36A Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25.8A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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MXLSMCJ36Ae3 MXLSMCJ36Ae3 Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25.8A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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MASMCJ36Ae3 MASMCJ36Ae3 Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25.8A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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MXSMCJ36A MXSMCJ36A Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 36VWM 58.1VC DO214AB
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MASMCJ36A MASMCJ36A Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25.8A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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LND150N3-G-P014 LND150N3-G-P014 Microchip Technology LND150%20C041114.pdf Description: MOSFET N-CH 500V 30MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V
Power Dissipation (Max): 740mW (Ta)
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V
на замовлення 1812 шт:
термін постачання 21-31 дні (днів)
8+48.77 грн
25+38.30 грн
Мінімальне замовлення: 8
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LND150N3-G-P014 LND150N3-G-P014 Microchip Technology LND150%20C041114.pdf Description: MOSFET N-CH 500V 30MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V
Power Dissipation (Max): 740mW (Ta)
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V
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JANS1N6621 JANS1N6621 Microchip Technology Description: DIODE GEN PURP 400V 2A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
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JANTXV1N6627US/TR JANTXV1N6627US/TR Microchip Technology Description: RECTIFIER UFR,FRR
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JANTXV1N6623US JANTXV1N6623US Microchip Technology 11068-sd52a-datasheet Description: DIODE GEN PURP 880V 1A D5A
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JANTXV1N6623US/TR JANTXV1N6623US/TR Microchip Technology 11068-sd52a-datasheet Description: RECTIFIER UFR,FRR
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JAN1N6623/TR JAN1N6623/TR Microchip Technology 10972-sa7-55-datasheet Description: RECTIFIER UFR,FRR
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JANTX1N6622US/TR JANTX1N6622US/TR Microchip Technology Description: DIODE GEN PURP 660V 2A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 660 V
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JAN1N6627US/TR JAN1N6627US/TR Microchip Technology Description: RECTIFIER UFR,FRR
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JANS1N6621/TR JANS1N6621/TR Microchip Technology Description: DIODE GEN PURP 400V 2A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
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JAN1N6620U JAN1N6620U Microchip Technology Description: DIODE GEN PURP 200V 1.2A A-MELF
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JANTXV1N6628US JANTXV1N6628US Microchip Technology 11069-sd53a-datasheet Description: DIODE GEN PURP 660V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
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JAN1N6623US/TR JAN1N6623US/TR Microchip Technology Description: RECTIFIER UFR,FRR
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JANTXV1N6621US/TR JANTXV1N6621US/TR Microchip Technology 11068-sd52a-datasheet Description: DIODE GEN PURP 440V 1.2A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 440 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
Qualification: MIL-PRF-19500/585
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JANTX1N6620US/TR JANTX1N6620US/TR Microchip Technology Description: DIODE GEN PURP 220V 2A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 220 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 220 V
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1N6620E3/TR Microchip Technology Description: RECTIFIER UFR,FRR
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JANTX1N6627U/TR JANTX1N6627U/TR Microchip Technology Description: RECTIFIER UFR,FRR
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JANTX1N6628US/TR JANTX1N6628US/TR Microchip Technology Description: DIODE GEN PURP 660V 1.75A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
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JANTX1N6627US/TR JANTX1N6627US/TR Microchip Technology Description: RECTIFIER UFR,FRR
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JANTX1N6620/TR JANTX1N6620/TR Microchip Technology Description: DIODE GEN PURP 220V 2A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 220 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 220 V
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JANTX1N6623US/TR JANTX1N6623US/TR Microchip Technology Description: RECTIFIER UFR,FRR
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MSMLJ70A MSMLJ70A Microchip Technology 10563-msml-datasheet Description: TVS DIODE 70VWM 113VC DO214AB
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+385.90 грн
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MSMLJ54A MSMLJ54A Microchip Technology 10563-msml-datasheet Description: TVS DIODE 54VWM 87.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 34.4A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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MSMLJ64CAe3 MSMLJ64CAe3 Microchip Technology 10563-msml-datasheet Description: TVS DIODE 64VWM 103VC DO214AB
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MSMLJ43CA MSMLJ43CA Microchip Technology 10563-msml-datasheet Description: TVS DIODE 43VWM 69.4VC DO214AB
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MSMLJ5.0CAe3 MSMLJ5.0CAe3 Microchip Technology 10563-msml-datasheet Description: TVS DIODE 5VWM 9.2VC DO214AB
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MSMLJ43Ae3 MSMLJ43Ae3 Microchip Technology msmlg5_j5_series_datasheet_revd.pdf Description: TVS DIODE 43VWM 69.4VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 43.2A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MSMLJ28CAe3 MSMLJ28CAe3 Microchip Technology 10563-msml-datasheet Description: TVS DIODE 28VWM 45.4VC DO214AB
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MSMLJ7.5A MSMLJ7.5A Microchip Technology 10563-msml-datasheet Description: TVS DIODE 7.5VWM 12.9VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 232.6A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MSMLJ7.0Ae3 MSMLJ7.0Ae3 Microchip Technology 10563-msml-datasheet Description: TVS DIODE 7VWM 12VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 250A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MSMLJ7.0CAe3 MSMLJ7.0CAe3 Microchip Technology 10563-msml-datasheet Description: TVS DIODE 7VWM 12VC DO214AB
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MSMLJ70Ae3 MSMLJ70Ae3 Microchip Technology 10563-msml-datasheet Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 26.6A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MSMLJ6.5CAE3 MSMLJ6.5CAE3 Microchip Technology 10563-msml-datasheet Description: TVS DIODE 6.5VWM 11.2VC DO214AB
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1N6626U
Виробник: Microchip Technology
Description: UFR,FRR
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JANTXV1N6626U/TR
Виробник: Microchip Technology
Description: UFR,FRR
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1N6626U/TR
Виробник: Microchip Technology
Description: UFR,FRR
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1N6626/TR 10973-sa7-57-datasheet
1N6626/TR
Виробник: Microchip Technology
Description: RECTIFIER UFR,FRR
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ATSAMD51P19A-AFT SAM-D5x-E5x-Family-Silicon-Errata-and-Data-Sheet-Clarification-DS80000748.pdf
ATSAMD51P19A-AFT
Виробник: Microchip Technology
Description: IC MCU 32BIT 512KB FLASH 128TQFP
Packaging: Tape & Reel (TR)
Package / Case: 128-TQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.63V
Connectivity: EBI/EMI, I2C, IrDA, LINbus, MMC/SD, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM
Supplier Device Package: 128-TQFP (14x14)
Grade: Automotive
Number of I/O: 99
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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ATSAMD51P19A-AFT SAM-D5x-E5x-Family-Silicon-Errata-and-Data-Sheet-Clarification-DS80000748.pdf
ATSAMD51P19A-AFT
Виробник: Microchip Technology
Description: IC MCU 32BIT 512KB FLASH 128TQFP
Packaging: Cut Tape (CT)
Package / Case: 128-TQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.63V
Connectivity: EBI/EMI, I2C, IrDA, LINbus, MMC/SD, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM
Supplier Device Package: 128-TQFP (14x14)
Grade: Automotive
Number of I/O: 99
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 727 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+559.60 грн
25+493.39 грн
100+447.37 грн
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MCP6564-E/STVAO MCP6561-1R-1U-2-4-1.8V-Low-Power-Push-Pull-Output-Comparator-DS20002139E.pdf
MCP6564-E/STVAO
Виробник: Microchip Technology
Description: IC COMPARATOR 4 GEN PUR 14TSSOP
Packaging: Tube
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: CMOS, Push-Pull, TTL
Mounting Type: Surface Mount
Number of Elements: 4
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V
Supplier Device Package: 14-TSSOP
Propagation Delay (Max): 80ns
Current - Quiescent (Max): 130µA
Voltage - Input Offset (Max): 10mV @ 5.5V
Current - Input Bias (Max): 1pA @ 5.5V
Current - Output (Typ): 50mA
CMRR, PSRR (Typ): 66dB CMRR, 70dB PSRR
Hysteresis: 5mV
Grade: Automotive
Qualification: AEC-Q100
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MCP6567-E/MSVAO
MCP6567-E/MSVAO
Виробник: Microchip Technology
Description: IC COMPARATOR 2 GEN PUR 8MSOP
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: CMOS, Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V
Supplier Device Package: 8-MSOP
Propagation Delay (Max): 80ns
Current - Quiescent (Max): 130µA
Voltage - Input Offset (Max): 10mV @ 5.5V
Current - Input Bias (Max): 1pA @ 5.5V
Current - Output (Typ): 50mA
CMRR, PSRR (Typ): 66dB CMRR, 70dB PSRR
Hysteresis: 5mV
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MCP6564T-E/SLVAO MCP6561-1R-1U-2-4-1.8V-Low-Power-Push-Pull-Output-Comparator-DS20002139E.pdf
MCP6564T-E/SLVAO
Виробник: Microchip Technology
Description: IC COMPARATOR 4 GEN PUR 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: CMOS, Push-Pull, Rail-to-Rail, TTL
Mounting Type: Surface Mount
Number of Elements: 4
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V
Supplier Device Package: 14-SOIC
Propagation Delay (Max): 80ns
Current - Quiescent (Max): 130µA
Voltage - Input Offset (Max): 10mV @ 5.5V
Current - Input Bias (Max): 1pA @ 5.5V
Current - Output (Typ): 50mA
CMRR, PSRR (Typ): 66dB CMRR, 70dB PSRR
Hysteresis: 5mV
Grade: Automotive
Qualification: AEC-Q100
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MCP6567AT-E/UN MCP6566-6R-6U-7-9-1.8V-Low-Power-Open-Drain-Output-Comparator-DS20002143G.pdf
MCP6567AT-E/UN
Виробник: Microchip Technology
Description: IC COMP DUAL 1.8V OD 10MSOP
Packaging: Tape & Reel (TR)
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MCP6567AT-E/MF MCP6566-6R-6U-7-9-1.8V-Low-Power-Open-Drain-Output-Comparator-DS20002143G.pdf
MCP6567AT-E/MF
Виробник: Microchip Technology
Description: IC COMP DUAL 1.8V OD 10DFN
Packaging: Tape & Reel (TR)
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MCP6567A-E/MF MCP6566-6R-6U-7-9-1.8V-Low-Power-Open-Drain-Output-Comparator-DS20002143G.pdf
MCP6567A-E/MF
Виробник: Microchip Technology
Description: IC COMP DUAL 1.8V OD 10DFN
Packaging: Tube
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CDLL4473/TR
CDLL4473/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 17.6 V
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TC51N2202ECBTR 21429C.pdf
TC51N2202ECBTR
Виробник: Microchip Technology
Description: IC SUPERVISOR 1 CHANNEL SOT23A-3
на замовлення 3041 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+137.76 грн
25+110.38 грн
100+101.08 грн
Мінімальне замовлення: 3
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1N914UR-1/TR
1N914UR-1/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 75V 200MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 1.5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
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MNS1N5822US 131998-lds-0303-1.pdf
MNS1N5822US
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 40V 3A B SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Grade: Military
Qualification: MIL-PRF-19500/620
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JAN1N2844B
Виробник: Microchip Technology
Description: ZENER DIODE
Packaging: Bulk
Tolerance: ±5%
Package / Case: TO-204AD
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: TO-204AD (TO-3)
Part Status: Active
Power - Max: 10 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 121.6 V
Grade: Military
Qualification: MIL-PRF-19500/114
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MX553NBF155M520-TR MX553NBF155M520.pdf
Виробник: Microchip Technology
Description: XTAL OSC XO 155.5200MHZ LVPECL
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: LVPECL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.375V ~ 3.63V
Current - Supply (Max): 120mA
Height - Seated (Max): 0.055" (1.40mm)
Frequency: 155.52 MHz
Base Resonator: Crystal
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MX553NBF155M520 MX553NBF155M520.pdf
Виробник: Microchip Technology
Description: XTAL OSC XO 155.5200MHZ LVPECL
Packaging: Tube
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: LVPECL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.375V ~ 3.63V
Current - Supply (Max): 120mA
Height - Seated (Max): 0.055" (1.40mm)
Frequency: 155.52 MHz
Base Resonator: Crystal
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JANKCBL2N3440
JANKCBL2N3440
Виробник: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
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JANSM2N3440L
JANSM2N3440L
Виробник: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
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JANSD2N3440L
JANSD2N3440L
Виробник: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
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MXLSMCJ36A 10561-msmc-datasheet
MXLSMCJ36A
Виробник: Microchip Technology
Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25.8A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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MXLSMCJ36Ae3 10561-msmc-datasheet
MXLSMCJ36Ae3
Виробник: Microchip Technology
Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25.8A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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MASMCJ36Ae3 10561-msmc-datasheet
MASMCJ36Ae3
Виробник: Microchip Technology
Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25.8A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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MXSMCJ36A 10561-msmc-datasheet
MXSMCJ36A
Виробник: Microchip Technology
Description: TVS DIODE 36VWM 58.1VC DO214AB
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MASMCJ36A 10561-msmc-datasheet
MASMCJ36A
Виробник: Microchip Technology
Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25.8A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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LND150N3-G-P014 LND150%20C041114.pdf
LND150N3-G-P014
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 30MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V
Power Dissipation (Max): 740mW (Ta)
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V
на замовлення 1812 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+48.77 грн
25+38.30 грн
Мінімальне замовлення: 8
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LND150N3-G-P014 LND150%20C041114.pdf
LND150N3-G-P014
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 30MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V
Power Dissipation (Max): 740mW (Ta)
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V
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JANS1N6621
JANS1N6621
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 2A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
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JANTXV1N6627US/TR
JANTXV1N6627US/TR
Виробник: Microchip Technology
Description: RECTIFIER UFR,FRR
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JANTXV1N6623US 11068-sd52a-datasheet
JANTXV1N6623US
Виробник: Microchip Technology
Description: DIODE GEN PURP 880V 1A D5A
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JANTXV1N6623US/TR 11068-sd52a-datasheet
JANTXV1N6623US/TR
Виробник: Microchip Technology
Description: RECTIFIER UFR,FRR
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JAN1N6623/TR 10972-sa7-55-datasheet
JAN1N6623/TR
Виробник: Microchip Technology
Description: RECTIFIER UFR,FRR
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JANTX1N6622US/TR
JANTX1N6622US/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 660V 2A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 660 V
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JAN1N6627US/TR
JAN1N6627US/TR
Виробник: Microchip Technology
Description: RECTIFIER UFR,FRR
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JANS1N6621/TR
JANS1N6621/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 2A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
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JAN1N6620U
JAN1N6620U
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1.2A A-MELF
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JANTXV1N6628US 11069-sd53a-datasheet
JANTXV1N6628US
Виробник: Microchip Technology
Description: DIODE GEN PURP 660V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
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JAN1N6623US/TR
JAN1N6623US/TR
Виробник: Microchip Technology
Description: RECTIFIER UFR,FRR
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JANTXV1N6621US/TR 11068-sd52a-datasheet
JANTXV1N6621US/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 440V 1.2A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 440 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
Qualification: MIL-PRF-19500/585
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JANTX1N6620US/TR
JANTX1N6620US/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 220V 2A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 220 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 220 V
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1N6620E3/TR
Виробник: Microchip Technology
Description: RECTIFIER UFR,FRR
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JANTX1N6627U/TR
JANTX1N6627U/TR
Виробник: Microchip Technology
Description: RECTIFIER UFR,FRR
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JANTX1N6628US/TR
JANTX1N6628US/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 660V 1.75A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
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JANTX1N6627US/TR
JANTX1N6627US/TR
Виробник: Microchip Technology
Description: RECTIFIER UFR,FRR
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JANTX1N6620/TR
JANTX1N6620/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 220V 2A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 220 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 220 V
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JANTX1N6623US/TR
JANTX1N6623US/TR
Виробник: Microchip Technology
Description: RECTIFIER UFR,FRR
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MSMLJ70A 10563-msml-datasheet
MSMLJ70A
Виробник: Microchip Technology
Description: TVS DIODE 70VWM 113VC DO214AB
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+385.90 грн
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MSMLJ54A 10563-msml-datasheet
MSMLJ54A
Виробник: Microchip Technology
Description: TVS DIODE 54VWM 87.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 34.4A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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MSMLJ64CAe3 10563-msml-datasheet
MSMLJ64CAe3
Виробник: Microchip Technology
Description: TVS DIODE 64VWM 103VC DO214AB
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MSMLJ43CA 10563-msml-datasheet
MSMLJ43CA
Виробник: Microchip Technology
Description: TVS DIODE 43VWM 69.4VC DO214AB
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MSMLJ5.0CAe3 10563-msml-datasheet
MSMLJ5.0CAe3
Виробник: Microchip Technology
Description: TVS DIODE 5VWM 9.2VC DO214AB
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MSMLJ43Ae3 msmlg5_j5_series_datasheet_revd.pdf
MSMLJ43Ae3
Виробник: Microchip Technology
Description: TVS DIODE 43VWM 69.4VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 43.2A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MSMLJ28CAe3 10563-msml-datasheet
MSMLJ28CAe3
Виробник: Microchip Technology
Description: TVS DIODE 28VWM 45.4VC DO214AB
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MSMLJ7.5A 10563-msml-datasheet
MSMLJ7.5A
Виробник: Microchip Technology
Description: TVS DIODE 7.5VWM 12.9VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 232.6A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MSMLJ7.0Ae3 10563-msml-datasheet
MSMLJ7.0Ae3
Виробник: Microchip Technology
Description: TVS DIODE 7VWM 12VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 250A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MSMLJ7.0CAe3 10563-msml-datasheet
MSMLJ7.0CAe3
Виробник: Microchip Technology
Description: TVS DIODE 7VWM 12VC DO214AB
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MSMLJ70Ae3 10563-msml-datasheet
MSMLJ70Ae3
Виробник: Microchip Technology
Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 26.6A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MSMLJ6.5CAE3 10563-msml-datasheet
MSMLJ6.5CAE3
Виробник: Microchip Technology
Description: TVS DIODE 6.5VWM 11.2VC DO214AB
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