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MXLSMBG28A MXLSMBG28A Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 28VWM 45.4VC SMBG
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MSMBG28CA MSMBG28CA Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 28VWM 45.4VC SMBG
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MSMBG28CAe3 MSMBG28CAe3 Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 28VWM 45.4VC SMBG
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MASMBG28A MASMBG28A Microchip Technology RF01000+%283%29.pdf Description: TVS DIODE 28VWM 45.4VC DO214AA
Packaging: Bulk
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.2A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AA (SMBG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MASMBG28Ae3 MASMBG28Ae3 Microchip Technology RF01000+%283%29.pdf Description: TVS DIODE 28VWM 45.4VC DO214AA
Packaging: Bulk
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.2A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AA (SMBG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLSMBG28Ae3 MXLSMBG28Ae3 Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 28VWM 45.4VC SMBG
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MXSMBG28CAe3 MXSMBG28CAe3 Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 28VWM 45.4VC SMBG
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MSMBG28A MSMBG28A Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 28VWM 45.4VC SMBG
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MXLSMBG28CA MXLSMBG28CA Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 28VWM 45.4VC SMBG
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MASMBG28CA MASMBG28CA Microchip Technology RF01000+%283%29.pdf Description: TVS DIODE 28VWM 45.4VC DO214AA
Packaging: Bulk
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.2A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AA (SMBG)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MSMBG28AE3 MSMBG28AE3 Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 28VWM 45.4VC SMBG
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MXSMBG28CA MXSMBG28CA Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 28VWM 45.4VC SMBG
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JANHCB2N5002 Microchip Technology Description: TRANS NPN 80V 10A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: Die
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
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JANHCC2N6193 JANHCC2N6193 Microchip Technology 14809-military-qualified-die-chip Description: TRANS PNP 100V 5A TO205AD
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Supplier Device Package: TO-205AD (TO-39)
Grade: Military
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/561
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JANHCB2N5004 Microchip Technology Description: TRANS NPN 80V 10A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: Die
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
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JANHCA2N3634 JANHCA2N3634 Microchip Technology 14809-military-qualified-die-chip Description: TRANS PNP 140V 1A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANHCA2N3635 JANHCA2N3635 Microchip Technology 14809-military-qualified-die-chip Description: TRANS PNP 140V 1A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANHCA2N3636 JANHCA2N3636 Microchip Technology 14809-military-qualified-die-chip Description: TRANS PNP 175V 1A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANHCA2N3637 JANHCA2N3637 Microchip Technology 14809-military-qualified-die-chip Description: TRANS PNP 175V 1A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANHCB2N3439 JANHCB2N3439 Microchip Technology 14809-military-qualified-die-chip Description: TRANS NPN 350V 1A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
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JANHCD2N5154 JANHCD2N5154 Microchip Technology 14809-military-qualified-die-chip Description: TRANS NPN 80V 2A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/544
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JANHCC2N3501 JANHCC2N3501 Microchip Technology Description: TRANS NPN 150V 0.3A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
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JANHCC2N5151 JANHCC2N5151 Microchip Technology 14809-military-qualified-die-chip Description: TRANS PNP 80V 2A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/545
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JANHCD2N5152 JANHCD2N5152 Microchip Technology 14809-military-qualified-die-chip Description: TRANS NPN 80V 2A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/544
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JANHCB2N3440 JANHCB2N3440 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
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JANHCB2N2221A JANHCB2N2221A Microchip Technology Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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DSPIC33CK64MP102-I/M6 DSPIC33CK64MP102-I/M6 Microchip Technology 70005363b.pdf Description: IC MCU 16BIT 64KB FLASH 28UQFN
Packaging: Tube
Package / Case: 28-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: dsPIC
Data Converters: A/D 12x12b; D/A 3x12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, QEI, Smart Card, WDT
Supplier Device Package: 28-UQFN (4x4)
Number of I/O: 21
DigiKey Programmable: Not Verified
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DSPIC33CK64MP102-E/M6 DSPIC33CK64MP102-E/M6 Microchip Technology 70005363b.pdf Description: IC MCU 16BIT 64KB FLASH 28UQFN
Packaging: Tube
Package / Case: 28-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: dsPIC
Data Converters: A/D 12x12b; D/A 3x12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, QEI, Smart Card, WDT
Supplier Device Package: 28-UQFN (4x4)
Grade: Automotive
Number of I/O: 21
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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MXL15KP240A/TR MXL15KP240A/TR Microchip Technology 9460-rf01011-m15kp-rev-e-datasheet Description: TVS DIODE 240VWM 388VC CASE 5A
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2N5968 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MB, TO-63-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-63
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 220 W
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2N5967 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MB, TO-63-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-63
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 220 W
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2N5966 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MB, TO-63-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-63
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 220 W
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2N5960 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-61
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 175 W
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2N5957 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-61
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 175 W
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2N5958 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-61
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 175 W
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2N5970 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-204AD (TO-3)
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 85 W
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2N5959 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-61
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 175 W
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2N5969 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MB, TO-63-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-63
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 220 W
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DSA1121DA2-100.0000TVAO Microchip Technology DSA1101-21-05-25-Low-Jitter-CMOS-Oscillator-for-Automotive-DS20005890C.pdf Description: MEMS OSC AUTO LOW JITTER -40C-12
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DSA1121DA2-100.0000VAO Microchip Technology DSA1101-21-05-25-Low-Jitter-CMOS-Oscillator-for-Automotive-DS20005890C.pdf Description: MEMS OSC AUTO LOW JITTER -40C-12
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2C3421-PI Microchip Technology Description: POWER BJT
Packaging: Bulk
Part Status: Active
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2C3421-MSCL Microchip Technology Description: POWER BJT
Packaging: Bulk
Part Status: Active
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DSC6011HA2B-029.4912 Microchip Technology Description: OSC MEMS LOW PWR LVCMOS
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DSA6001HA2B-029.4912VAO Microchip Technology DSA60xx-Ultra-Small-Low-Power-MEMS-Oscillator-for-Automotive-DS20006221A.pdf Description: MEMS OSC AUTO -40C-125C
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DSC6001HA2B-029.4912T DSC6001HA2B-029.4912T Microchip Technology DSC60xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006133A.pdf Description: MEMS OSC ULP LVCMOS -40C-125C 25
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DSC6011HA2B-029.4912T Microchip Technology Description: OSC MEMS LOW PWR LVCMOS
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DSA6001HA2B-029.4912TVAO Microchip Technology DSA60xx-Ultra-Small-Low-Power-MEMS-Oscillator-for-Automotive-DS20006221A.pdf Description: MEMS OSC AUTO -40C-125C
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DSC6001HA2B-029.4912 DSC6001HA2B-029.4912 Microchip Technology DSC60xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006133A.pdf Description: MEMS OSC ULP LVCMOS -40C-125C 25
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PIC16F18344T-I/GZ PIC16F18344T-I/GZ Microchip Technology 40001744C.pdf Description: IC MCU 8BIT 7KB FLASH 20UQFN
Packaging: Tape & Reel (TR)
Package / Case: 20-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 7KB (4K x 14)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 17x10b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 20-UQFN (4x4)
Part Status: Active
Number of I/O: 18
DigiKey Programmable: Not Verified
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PIC16F18344T-I/GZ PIC16F18344T-I/GZ Microchip Technology 40001744C.pdf Description: IC MCU 8BIT 7KB FLASH 20UQFN
Packaging: Cut Tape (CT)
Package / Case: 20-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 7KB (4K x 14)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 17x10b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 20-UQFN (4x4)
Part Status: Active
Number of I/O: 18
DigiKey Programmable: Not Verified
на замовлення 1318 шт:
термін постачання 21-31 дні (днів)
4+87.07 грн
25+77.65 грн
100+70.46 грн
Мінімальне замовлення: 4
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PIC16LF18325T-E/JQVAO PIC16LF18325T-E/JQVAO Microchip Technology Description: IC MCU 8BIT 14KB FLASH 16UQFN
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PIC16LF18325-E/JQVAO PIC16LF18325-E/JQVAO Microchip Technology Description: IC MCU 8BIT 14KB FLASH 16UQFN
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PIC16F18346T-I/SO PIC16F18346T-I/SO Microchip Technology 40001839E.pdf Description: IC MCU 8BIT 28KB FLASH 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 28KB (16K x 14)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 17x10b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 20-SOIC
Part Status: Active
Number of I/O: 18
DigiKey Programmable: Not Verified
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
1600+96.87 грн
Мінімальне замовлення: 1600
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PIC16F18346T-I/SO PIC16F18346T-I/SO Microchip Technology 40001839E.pdf Description: IC MCU 8BIT 28KB FLASH 20SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 28KB (16K x 14)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 17x10b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 20-SOIC
Part Status: Active
Number of I/O: 18
DigiKey Programmable: Not Verified
на замовлення 3825 шт:
термін постачання 21-31 дні (днів)
3+116.87 грн
25+103.39 грн
100+93.28 грн
Мінімальне замовлення: 3
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TC33370VAV TC33370VAV Microchip Technology TCSIS00089-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR HI VOLT SWITCHING
Packaging: Bulk
Package / Case: TO-220-5 Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 74%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.5V ~ 10V
Supplier Device Package: TO-220-5
Fault Protection: Current Limiting, Over Temperature, UVLO
Voltage - Start Up: 8.5 V
Part Status: Active
Power (Watts): 25 W
на замовлення 1079 шт:
термін постачання 21-31 дні (днів)
186+108.27 грн
Мінімальне замовлення: 186
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MCP47CVD12T-E/MG MCP47CVD12T-E/MG Microchip Technology MCP47CXDX1-2-8-10-12-Bit-Digital-to-Analog-Converters-1-LSb-INL-Single-Dual-Voltage-Outputs-with-I2C-Interface-DS20006666.pdf Description: DAC- I2C, DUAL CHANNEL, 10-BIT
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MCP47CVD12T-E/MG MCP47CVD12T-E/MG Microchip Technology MCP47CXDX1-2-8-10-12-Bit-Digital-to-Analog-Converters-1-LSb-INL-Single-Dual-Voltage-Outputs-with-I2C-Interface-DS20006666.pdf Description: DAC- I2C, DUAL CHANNEL, 10-BIT
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MCP48CVD12T-E/UN Microchip Technology Description: DAC- SPI, DUAL CHANNEL, 10-BIT
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MCP48CVD12T-E/UN Microchip Technology Description: DAC- SPI, DUAL CHANNEL, 10-BIT
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MCP48CVD12T-E/MF Microchip Technology Description: DAC- SPI, DUAL CHANNEL, 10-BIT
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MXLSMBG28A 10560-msmb-datasheet
MXLSMBG28A
Виробник: Microchip Technology
Description: TVS DIODE 28VWM 45.4VC SMBG
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MSMBG28CA 10560-msmb-datasheet
MSMBG28CA
Виробник: Microchip Technology
Description: TVS DIODE 28VWM 45.4VC SMBG
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MSMBG28CAe3 10560-msmb-datasheet
MSMBG28CAe3
Виробник: Microchip Technology
Description: TVS DIODE 28VWM 45.4VC SMBG
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MASMBG28A RF01000+%283%29.pdf
MASMBG28A
Виробник: Microchip Technology
Description: TVS DIODE 28VWM 45.4VC DO214AA
Packaging: Bulk
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.2A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AA (SMBG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MASMBG28Ae3 RF01000+%283%29.pdf
MASMBG28Ae3
Виробник: Microchip Technology
Description: TVS DIODE 28VWM 45.4VC DO214AA
Packaging: Bulk
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.2A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AA (SMBG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLSMBG28Ae3 10560-msmb-datasheet
MXLSMBG28Ae3
Виробник: Microchip Technology
Description: TVS DIODE 28VWM 45.4VC SMBG
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MXSMBG28CAe3 10560-msmb-datasheet
MXSMBG28CAe3
Виробник: Microchip Technology
Description: TVS DIODE 28VWM 45.4VC SMBG
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MSMBG28A 10560-msmb-datasheet
MSMBG28A
Виробник: Microchip Technology
Description: TVS DIODE 28VWM 45.4VC SMBG
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MXLSMBG28CA 10560-msmb-datasheet
MXLSMBG28CA
Виробник: Microchip Technology
Description: TVS DIODE 28VWM 45.4VC SMBG
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MASMBG28CA RF01000+%283%29.pdf
MASMBG28CA
Виробник: Microchip Technology
Description: TVS DIODE 28VWM 45.4VC DO214AA
Packaging: Bulk
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.2A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AA (SMBG)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MSMBG28AE3 10560-msmb-datasheet
MSMBG28AE3
Виробник: Microchip Technology
Description: TVS DIODE 28VWM 45.4VC SMBG
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MXSMBG28CA 10560-msmb-datasheet
MXSMBG28CA
Виробник: Microchip Technology
Description: TVS DIODE 28VWM 45.4VC SMBG
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JANHCB2N5002
Виробник: Microchip Technology
Description: TRANS NPN 80V 10A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: Die
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
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JANHCC2N6193 14809-military-qualified-die-chip
JANHCC2N6193
Виробник: Microchip Technology
Description: TRANS PNP 100V 5A TO205AD
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Supplier Device Package: TO-205AD (TO-39)
Grade: Military
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/561
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JANHCB2N5004
Виробник: Microchip Technology
Description: TRANS NPN 80V 10A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: Die
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
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JANHCA2N3634 14809-military-qualified-die-chip
JANHCA2N3634
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANHCA2N3635 14809-military-qualified-die-chip
JANHCA2N3635
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANHCA2N3636 14809-military-qualified-die-chip
JANHCA2N3636
Виробник: Microchip Technology
Description: TRANS PNP 175V 1A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANHCA2N3637 14809-military-qualified-die-chip
JANHCA2N3637
Виробник: Microchip Technology
Description: TRANS PNP 175V 1A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANHCB2N3439 14809-military-qualified-die-chip
JANHCB2N3439
Виробник: Microchip Technology
Description: TRANS NPN 350V 1A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
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JANHCD2N5154 14809-military-qualified-die-chip
JANHCD2N5154
Виробник: Microchip Technology
Description: TRANS NPN 80V 2A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/544
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JANHCC2N3501
JANHCC2N3501
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
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JANHCC2N5151 14809-military-qualified-die-chip
JANHCC2N5151
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/545
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JANHCD2N5152 14809-military-qualified-die-chip
JANHCD2N5152
Виробник: Microchip Technology
Description: TRANS NPN 80V 2A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/544
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JANHCB2N3440
JANHCB2N3440
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
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JANHCB2N2221A
JANHCB2N2221A
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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DSPIC33CK64MP102-I/M6 70005363b.pdf
DSPIC33CK64MP102-I/M6
Виробник: Microchip Technology
Description: IC MCU 16BIT 64KB FLASH 28UQFN
Packaging: Tube
Package / Case: 28-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: dsPIC
Data Converters: A/D 12x12b; D/A 3x12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, QEI, Smart Card, WDT
Supplier Device Package: 28-UQFN (4x4)
Number of I/O: 21
DigiKey Programmable: Not Verified
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DSPIC33CK64MP102-E/M6 70005363b.pdf
DSPIC33CK64MP102-E/M6
Виробник: Microchip Technology
Description: IC MCU 16BIT 64KB FLASH 28UQFN
Packaging: Tube
Package / Case: 28-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: dsPIC
Data Converters: A/D 12x12b; D/A 3x12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, QEI, Smart Card, WDT
Supplier Device Package: 28-UQFN (4x4)
Grade: Automotive
Number of I/O: 21
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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MXL15KP240A/TR 9460-rf01011-m15kp-rev-e-datasheet
MXL15KP240A/TR
Виробник: Microchip Technology
Description: TVS DIODE 240VWM 388VC CASE 5A
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2N5968
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MB, TO-63-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-63
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 220 W
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2N5967
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MB, TO-63-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-63
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 220 W
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2N5966
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MB, TO-63-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-63
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 220 W
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2N5960
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-61
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 175 W
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2N5957
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-61
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 175 W
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2N5958
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-61
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 175 W
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2N5970
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-204AD (TO-3)
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 85 W
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2N5959
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-61
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 175 W
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2N5969
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MB, TO-63-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-63
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 220 W
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DSA1121DA2-100.0000TVAO DSA1101-21-05-25-Low-Jitter-CMOS-Oscillator-for-Automotive-DS20005890C.pdf
Виробник: Microchip Technology
Description: MEMS OSC AUTO LOW JITTER -40C-12
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DSA1121DA2-100.0000VAO DSA1101-21-05-25-Low-Jitter-CMOS-Oscillator-for-Automotive-DS20005890C.pdf
Виробник: Microchip Technology
Description: MEMS OSC AUTO LOW JITTER -40C-12
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2C3421-PI
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Part Status: Active
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2C3421-MSCL
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Part Status: Active
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DSC6011HA2B-029.4912
Виробник: Microchip Technology
Description: OSC MEMS LOW PWR LVCMOS
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DSA6001HA2B-029.4912VAO DSA60xx-Ultra-Small-Low-Power-MEMS-Oscillator-for-Automotive-DS20006221A.pdf
Виробник: Microchip Technology
Description: MEMS OSC AUTO -40C-125C
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DSC6001HA2B-029.4912T DSC60xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006133A.pdf
DSC6001HA2B-029.4912T
Виробник: Microchip Technology
Description: MEMS OSC ULP LVCMOS -40C-125C 25
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DSC6011HA2B-029.4912T
Виробник: Microchip Technology
Description: OSC MEMS LOW PWR LVCMOS
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DSA6001HA2B-029.4912TVAO DSA60xx-Ultra-Small-Low-Power-MEMS-Oscillator-for-Automotive-DS20006221A.pdf
Виробник: Microchip Technology
Description: MEMS OSC AUTO -40C-125C
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DSC6001HA2B-029.4912 DSC60xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006133A.pdf
DSC6001HA2B-029.4912
Виробник: Microchip Technology
Description: MEMS OSC ULP LVCMOS -40C-125C 25
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PIC16F18344T-I/GZ 40001744C.pdf
PIC16F18344T-I/GZ
Виробник: Microchip Technology
Description: IC MCU 8BIT 7KB FLASH 20UQFN
Packaging: Tape & Reel (TR)
Package / Case: 20-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 7KB (4K x 14)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 17x10b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 20-UQFN (4x4)
Part Status: Active
Number of I/O: 18
DigiKey Programmable: Not Verified
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PIC16F18344T-I/GZ 40001744C.pdf
PIC16F18344T-I/GZ
Виробник: Microchip Technology
Description: IC MCU 8BIT 7KB FLASH 20UQFN
Packaging: Cut Tape (CT)
Package / Case: 20-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 7KB (4K x 14)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 17x10b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 20-UQFN (4x4)
Part Status: Active
Number of I/O: 18
DigiKey Programmable: Not Verified
на замовлення 1318 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+87.07 грн
25+77.65 грн
100+70.46 грн
Мінімальне замовлення: 4
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PIC16LF18325T-E/JQVAO
PIC16LF18325T-E/JQVAO
Виробник: Microchip Technology
Description: IC MCU 8BIT 14KB FLASH 16UQFN
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PIC16LF18325-E/JQVAO
PIC16LF18325-E/JQVAO
Виробник: Microchip Technology
Description: IC MCU 8BIT 14KB FLASH 16UQFN
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PIC16F18346T-I/SO 40001839E.pdf
PIC16F18346T-I/SO
Виробник: Microchip Technology
Description: IC MCU 8BIT 28KB FLASH 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 28KB (16K x 14)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 17x10b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 20-SOIC
Part Status: Active
Number of I/O: 18
DigiKey Programmable: Not Verified
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1600+96.87 грн
Мінімальне замовлення: 1600
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PIC16F18346T-I/SO 40001839E.pdf
PIC16F18346T-I/SO
Виробник: Microchip Technology
Description: IC MCU 8BIT 28KB FLASH 20SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 28KB (16K x 14)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 17x10b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 20-SOIC
Part Status: Active
Number of I/O: 18
DigiKey Programmable: Not Verified
на замовлення 3825 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+116.87 грн
25+103.39 грн
100+93.28 грн
Мінімальне замовлення: 3
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TC33370VAV TCSIS00089-1.pdf?t.download=true&u=5oefqw
TC33370VAV
Виробник: Microchip Technology
Description: IC REG LINEAR HI VOLT SWITCHING
Packaging: Bulk
Package / Case: TO-220-5 Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 74%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.5V ~ 10V
Supplier Device Package: TO-220-5
Fault Protection: Current Limiting, Over Temperature, UVLO
Voltage - Start Up: 8.5 V
Part Status: Active
Power (Watts): 25 W
на замовлення 1079 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
186+108.27 грн
Мінімальне замовлення: 186
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MCP47CVD12T-E/MG MCP47CXDX1-2-8-10-12-Bit-Digital-to-Analog-Converters-1-LSb-INL-Single-Dual-Voltage-Outputs-with-I2C-Interface-DS20006666.pdf
MCP47CVD12T-E/MG
Виробник: Microchip Technology
Description: DAC- I2C, DUAL CHANNEL, 10-BIT
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MCP47CVD12T-E/MG MCP47CXDX1-2-8-10-12-Bit-Digital-to-Analog-Converters-1-LSb-INL-Single-Dual-Voltage-Outputs-with-I2C-Interface-DS20006666.pdf
MCP47CVD12T-E/MG
Виробник: Microchip Technology
Description: DAC- I2C, DUAL CHANNEL, 10-BIT
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MCP48CVD12T-E/UN
Виробник: Microchip Technology
Description: DAC- SPI, DUAL CHANNEL, 10-BIT
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MCP48CVD12T-E/UN
Виробник: Microchip Technology
Description: DAC- SPI, DUAL CHANNEL, 10-BIT
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MCP48CVD12T-E/MF
Виробник: Microchip Technology
Description: DAC- SPI, DUAL CHANNEL, 10-BIT
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