Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (332758) > Сторінка 1579 з 5546
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JANTXV2N5794UC/TR | Microchip Technology | Description: TRANSISTOR SMALL-SIGNAL BJT |
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JAN2N5794A | Microchip Technology | Description: NPN TRANSISTOR |
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JANTXV2N5794A | Microchip Technology | Description: NPN TRANSISTOR |
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JANTX2N5794AUC | Microchip Technology | Description: PNP TRANSISTOR |
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JANTX2N5794A | Microchip Technology | Description: PNP TRANSISTOR |
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JANS2N5794UC | Microchip Technology | Description: DUAL SMALL-SIGNAL BJT |
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2N5794AU | Microchip Technology | Description: DUAL SMALL-SIGNAL BJT |
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JANTX2N5794UC/TR | Microchip Technology | Description: DUAL SMALL-SIGNAL BJT |
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2N5794UC/TR | Microchip Technology | Description: DUAL SMALL-SIGNAL BJT |
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JANS2N5794U | Microchip Technology | Description: DUAL SMALL-SIGNAL BJT |
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JANS2N5794U/TR | Microchip Technology | Description: DUAL SMALL-SIGNAL BJT |
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JAN2N5794UC/TR | Microchip Technology | Description: DUAL SMALL-SIGNAL BJT |
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JANS2N5794UC/TR | Microchip Technology | Description: DUAL SMALL-SIGNAL BJT |
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2N5794A | Microchip Technology | Description: DUAL SMALL-SIGNAL BJT |
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2N5794UC | Microchip Technology | Description: DUAL SMALL-SIGNAL BJT |
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JANTXV2N5794U/TR | Microchip Technology | Description: DUAL SMALL-SIGNAL BJT |
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2N5794AU/TR | Microchip Technology | Description: DUAL SMALL-SIGNAL BJT |
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JANTX2N5794U/TR | Microchip Technology | Description: DUAL SMALL-SIGNAL BJT |
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2N5794U | Microchip Technology | Description: NPN TRANSISTOR |
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2N5794U/TR | Microchip Technology | Description: TRANSISTOR DUAL SMALL-SIGNAL BJT |
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PIC32MK0512GPE064T-I/PT | Microchip Technology |
Description: IC MCU 32BIT 512KB FLASH 64TQFP Packaging: Tape & Reel (TR) Package / Case: 64-TQFP Mounting Type: Surface Mount Speed: 120MHz Program Memory Size: 512KB (512K x 8) RAM Size: 128K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: MIPS32® microAptiv™ Data Converters: A/D 26x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V Connectivity: CANbus, IrDA, LINbus, PMP, SPI, UART/USART, USB OTG Peripherals: Brown-out Detect/Reset, DMA, I²S, POR, WDT Supplier Device Package: 64-TQFP (10x10) Part Status: Active Number of I/O: 48 |
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PIC32MK0512GPE064T-E/MR | Microchip Technology |
Description: IC MCU 32BIT 512KB FLASH 64QFN Packaging: Tape & Reel (TR) Package / Case: 64-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 512KB (512K x 8) RAM Size: 128K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: MIPS32® microAptiv™ Data Converters: A/D 26x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V Connectivity: CANbus, IrDA, LINbus, PMP, SPI, UART/USART, USB OTG Peripherals: Brown-out Detect/Reset, DMA, I²S, POR, WDT Supplier Device Package: 64-QFN (9x9) Part Status: Obsolete Number of I/O: 48 |
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PIC32MK0512GPE064T-E/MR | Microchip Technology |
Description: IC MCU 32BIT 512KB FLASH 64QFN Packaging: Cut Tape (CT) Package / Case: 64-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 512KB (512K x 8) RAM Size: 128K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: MIPS32® microAptiv™ Data Converters: A/D 26x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V Connectivity: CANbus, IrDA, LINbus, PMP, SPI, UART/USART, USB OTG Peripherals: Brown-out Detect/Reset, DMA, I²S, POR, WDT Supplier Device Package: 64-QFN (9x9) Part Status: Obsolete Number of I/O: 48 |
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PIC32MK0512GPD100T-E/PT | Microchip Technology |
Description: IC MCU 32BIT 512KB FLASH 100TQFP Packaging: Tape & Reel (TR) Package / Case: 100-TQFP Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 512KB (512K x 8) RAM Size: 128K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: MIPS32® microAptiv™ Data Converters: A/D 42x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V Connectivity: IrDA, LINbus, PMP, SPI, UART/USART, USB OTG Peripherals: Brown-out Detect/Reset, DMA, I²S, POR, WDT Supplier Device Package: 100-TQFP (12x12) Part Status: Obsolete Number of I/O: 77 |
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PIC32MK0512GPD100T-E/PT | Microchip Technology |
Description: IC MCU 32BIT 512KB FLASH 100TQFP Packaging: Cut Tape (CT) Package / Case: 100-TQFP Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 512KB (512K x 8) RAM Size: 128K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: MIPS32® microAptiv™ Data Converters: A/D 42x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V Connectivity: IrDA, LINbus, PMP, SPI, UART/USART, USB OTG Peripherals: Brown-out Detect/Reset, DMA, I²S, POR, WDT Supplier Device Package: 100-TQFP (12x12) Part Status: Obsolete Number of I/O: 77 |
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PIC32MK0512GPK100T-I/PT | Microchip Technology |
Description: IC MCU 32BIT 512KB FLASH 100TQFP Packaging: Tape & Reel (TR) Package / Case: 100-TQFP Mounting Type: Surface Mount Speed: 120MHz Program Memory Size: 512KB (512K x 8) RAM Size: 128K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: MIPS32® microAptiv™ Data Converters: A/D 42x12b; D/A 3x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.3V ~ 3.6V Connectivity: I2C, IrDA, LINbus, PMP, SPI, UART/USART, USB OTG Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT Supplier Device Package: 100-TQFP (12x12) Number of I/O: 78 DigiKey Programmable: Not Verified |
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PIC32MK0512GPK064T-E/MR | Microchip Technology | Description: IC MCU 32BIT 512KB FLASH 64QFN |
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GC1608-85 | Microchip Technology |
Description: SI TVAR HERMETIC PILL Packaging: Tray Diode Type: Single Operating Temperature: -55°C ~ 125°C Capacitance @ Vr, F: 3.9pF @ 4V, 1MHz Q @ Vr, F: 1900 @ 4V, 50MHz Capacitance Ratio Condition: C0/C45 Voltage - Peak Reverse (Max): 45 V Capacitance Ratio: 5.4 |
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GC1602-85 | Microchip Technology |
Description: SI TVAR HERMETIC PILL Packaging: Tray Diode Type: Single Operating Temperature: -55°C ~ 125°C Capacitance @ Vr, F: 1.2pF @ 4V, 1MHz Q @ Vr, F: 2800 @ 4V, 50MHz Capacitance Ratio Condition: C0/C45 Voltage - Peak Reverse (Max): 45 V Capacitance Ratio: 4.5 |
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B10443 | Microchip Technology |
Description: OPTOLYZER STUDIO ENTRY FROM K2L Packaging: Bulk For Use With/Related Products: APGDT001, APGDT002 Type: Network Analyzer Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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1N5952D | Microchip Technology | Description: DIODE ZENER |
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1N5952B | Microchip Technology | Description: DIODE ZENER |
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1N5952C | Microchip Technology | Description: DIODE ZENER |
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DSC613PE2A-017Q | Microchip Technology | Description: 3-OUTPUT MEMS CLOCK GEN, 23.9998 |
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DSC613RE1A-017Q | Microchip Technology | Description: 3-OUTPUT MEMS CLOCK GEN, 23.9998 |
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DSC613PE2A-017QT | Microchip Technology | Description: 3-OUTPUT MEMS CLOCK GEN, 23.9998 |
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DSC613RE1A-017QT | Microchip Technology | Description: 3-OUTPUT MEMS CLOCK GEN, 23.9998 |
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DSC613PE1A-017QT | Microchip Technology | Description: 3-OUTPUT MEMS CLOCK GEN, 23.9998 |
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DSC613PE1A-017Q | Microchip Technology | Description: 3-OUTPUT MEMS CLOCK GEN, 23.9998 |
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JANTXV1N1188 | Microchip Technology |
Description: DIODE GEN PURP 400V 35A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 35A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 110 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
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JAN1N1188R | Microchip Technology |
Description: DIODE GEN PURP REV 400V 35A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 35A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 110 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
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JANTXV1N1188R | Microchip Technology |
Description: DIODE GEN PURP REV 400V 35A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 35A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 110 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
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1N1188 | Microchip Technology |
Description: STANDARD RECTIFIER Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 35A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 110 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
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JANTX1N1188 | Microchip Technology |
Description: DIODE GEN PURP REV 400V 35A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 35A Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 110 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
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1N5806E3 | Microchip Technology |
Description: DIODE GEN PURP 150V 1A A AXIAL Packaging: Bulk Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V |
на замовлення 173 шт: термін постачання 21-31 дні (днів) |
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TP2104N3-G-P003 | Microchip Technology |
Description: MOSFET P-CH 40V 175MA TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 175mA (Tj) Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V Power Dissipation (Max): 740mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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TP2104N3-G-P003 | Microchip Technology |
Description: MOSFET P-CH 40V 175MA TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 175mA (Tj) Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V Power Dissipation (Max): 740mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V |
на замовлення 2601 шт: термін постачання 21-31 дні (днів) |
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HT-MM900AC-6K-EE-30M0000000 | Microchip Technology | Description: HT-MM900AC-6K-EE-30M0000000 |
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HT-MM900AC-2K-EE-30M0000000 | Microchip Technology | Description: HIGH TEMP MEMS BASED XO +3.3 VDC |
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HT-MM900AC-6E-EE-30M0000000 | Microchip Technology | Description: HIGH TEMP MEMS BASED XO +3.3 VDC |
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MO-9000AE-7F-EE-30M0000000 | Microchip Technology | Description: MEMS BASED XO +3.3 VDC -40C TO + |
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HT-MM900AF-7K-EE-30M0000000 | Microchip Technology | Description: HIGH TEMP MEMS BASED XO +3.3 VDC |
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HT-MM900AC-4K-EE-30M0000000 | Microchip Technology | Description: HIGH TEMP MEMS BASED XO +3.3 VDC |
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HT-MM900AE-7F-EE-30M0000000 | Microchip Technology | Description: HIGH TEMP MEMS BASED XO +3.3 VDC |
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HT-MM900A7-2K-EE-30M0000000 | Microchip Technology | Description: HIGH TEMP MEMS BASED XO +3.3 VDC |
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VV-701-EAE-PNEE-30M0000000 | Microchip Technology | Description: LOW FREQUENCY CERAMIC VCXO +3.3 |
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HT-MM900AE-4K-EE-30M0000000 | Microchip Technology | Description: HIGH TEMP MEMS BASED XO +3.3 VDC |
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DSC6001CE1A-027.1780 | Microchip Technology | Description: MEMS OSC XO 27.1780MHZ CMOS SMD |
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DSC6111CE1A-027.2250T | Microchip Technology | Description: MEMS OSC XO 27.2250MHZ CMOS SMD |
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DSC6101JI1A-027.0000 | Microchip Technology | Description: MEMS OSC LVCMOS 50PPM 2.5X2.0MM |
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JANTXV2N5794UC/TR |
Виробник: Microchip Technology
Description: TRANSISTOR SMALL-SIGNAL BJT
Description: TRANSISTOR SMALL-SIGNAL BJT
товар відсутній
2N5794U/TR |
Виробник: Microchip Technology
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
товар відсутній
PIC32MK0512GPE064T-I/PT |
Виробник: Microchip Technology
Description: IC MCU 32BIT 512KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 26x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V
Connectivity: CANbus, IrDA, LINbus, PMP, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I²S, POR, WDT
Supplier Device Package: 64-TQFP (10x10)
Part Status: Active
Number of I/O: 48
Description: IC MCU 32BIT 512KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 26x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V
Connectivity: CANbus, IrDA, LINbus, PMP, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I²S, POR, WDT
Supplier Device Package: 64-TQFP (10x10)
Part Status: Active
Number of I/O: 48
товар відсутній
PIC32MK0512GPE064T-E/MR |
Виробник: Microchip Technology
Description: IC MCU 32BIT 512KB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 26x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V
Connectivity: CANbus, IrDA, LINbus, PMP, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I²S, POR, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Obsolete
Number of I/O: 48
Description: IC MCU 32BIT 512KB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 26x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V
Connectivity: CANbus, IrDA, LINbus, PMP, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I²S, POR, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Obsolete
Number of I/O: 48
товар відсутній
PIC32MK0512GPE064T-E/MR |
Виробник: Microchip Technology
Description: IC MCU 32BIT 512KB FLASH 64QFN
Packaging: Cut Tape (CT)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 26x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V
Connectivity: CANbus, IrDA, LINbus, PMP, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I²S, POR, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Obsolete
Number of I/O: 48
Description: IC MCU 32BIT 512KB FLASH 64QFN
Packaging: Cut Tape (CT)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 26x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V
Connectivity: CANbus, IrDA, LINbus, PMP, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I²S, POR, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Obsolete
Number of I/O: 48
товар відсутній
PIC32MK0512GPD100T-E/PT |
Виробник: Microchip Technology
Description: IC MCU 32BIT 512KB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 42x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V
Connectivity: IrDA, LINbus, PMP, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I²S, POR, WDT
Supplier Device Package: 100-TQFP (12x12)
Part Status: Obsolete
Number of I/O: 77
Description: IC MCU 32BIT 512KB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 42x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V
Connectivity: IrDA, LINbus, PMP, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I²S, POR, WDT
Supplier Device Package: 100-TQFP (12x12)
Part Status: Obsolete
Number of I/O: 77
товар відсутній
PIC32MK0512GPD100T-E/PT |
Виробник: Microchip Technology
Description: IC MCU 32BIT 512KB FLASH 100TQFP
Packaging: Cut Tape (CT)
Package / Case: 100-TQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 42x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V
Connectivity: IrDA, LINbus, PMP, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I²S, POR, WDT
Supplier Device Package: 100-TQFP (12x12)
Part Status: Obsolete
Number of I/O: 77
Description: IC MCU 32BIT 512KB FLASH 100TQFP
Packaging: Cut Tape (CT)
Package / Case: 100-TQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 42x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V
Connectivity: IrDA, LINbus, PMP, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I²S, POR, WDT
Supplier Device Package: 100-TQFP (12x12)
Part Status: Obsolete
Number of I/O: 77
товар відсутній
PIC32MK0512GPK100T-I/PT |
Виробник: Microchip Technology
Description: IC MCU 32BIT 512KB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 42x12b; D/A 3x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, PMP, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-TQFP (12x12)
Number of I/O: 78
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 512KB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 42x12b; D/A 3x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, PMP, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-TQFP (12x12)
Number of I/O: 78
DigiKey Programmable: Not Verified
товар відсутній
PIC32MK0512GPK064T-E/MR |
Виробник: Microchip Technology
Description: IC MCU 32BIT 512KB FLASH 64QFN
Description: IC MCU 32BIT 512KB FLASH 64QFN
товар відсутній
GC1608-85 |
Виробник: Microchip Technology
Description: SI TVAR HERMETIC PILL
Packaging: Tray
Diode Type: Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 3.9pF @ 4V, 1MHz
Q @ Vr, F: 1900 @ 4V, 50MHz
Capacitance Ratio Condition: C0/C45
Voltage - Peak Reverse (Max): 45 V
Capacitance Ratio: 5.4
Description: SI TVAR HERMETIC PILL
Packaging: Tray
Diode Type: Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 3.9pF @ 4V, 1MHz
Q @ Vr, F: 1900 @ 4V, 50MHz
Capacitance Ratio Condition: C0/C45
Voltage - Peak Reverse (Max): 45 V
Capacitance Ratio: 5.4
товар відсутній
GC1602-85 |
Виробник: Microchip Technology
Description: SI TVAR HERMETIC PILL
Packaging: Tray
Diode Type: Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 1.2pF @ 4V, 1MHz
Q @ Vr, F: 2800 @ 4V, 50MHz
Capacitance Ratio Condition: C0/C45
Voltage - Peak Reverse (Max): 45 V
Capacitance Ratio: 4.5
Description: SI TVAR HERMETIC PILL
Packaging: Tray
Diode Type: Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 1.2pF @ 4V, 1MHz
Q @ Vr, F: 2800 @ 4V, 50MHz
Capacitance Ratio Condition: C0/C45
Voltage - Peak Reverse (Max): 45 V
Capacitance Ratio: 4.5
товар відсутній
B10443 |
Виробник: Microchip Technology
Description: OPTOLYZER STUDIO ENTRY FROM K2L
Packaging: Bulk
For Use With/Related Products: APGDT001, APGDT002
Type: Network Analyzer
Part Status: Active
Description: OPTOLYZER STUDIO ENTRY FROM K2L
Packaging: Bulk
For Use With/Related Products: APGDT001, APGDT002
Type: Network Analyzer
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 28945.33 грн |
DSC613PE2A-017Q |
Виробник: Microchip Technology
Description: 3-OUTPUT MEMS CLOCK GEN, 23.9998
Description: 3-OUTPUT MEMS CLOCK GEN, 23.9998
товар відсутній
DSC613RE1A-017Q |
Виробник: Microchip Technology
Description: 3-OUTPUT MEMS CLOCK GEN, 23.9998
Description: 3-OUTPUT MEMS CLOCK GEN, 23.9998
товар відсутній
DSC613PE2A-017QT |
Виробник: Microchip Technology
Description: 3-OUTPUT MEMS CLOCK GEN, 23.9998
Description: 3-OUTPUT MEMS CLOCK GEN, 23.9998
товар відсутній
DSC613RE1A-017QT |
Виробник: Microchip Technology
Description: 3-OUTPUT MEMS CLOCK GEN, 23.9998
Description: 3-OUTPUT MEMS CLOCK GEN, 23.9998
товар відсутній
DSC613PE1A-017QT |
Виробник: Microchip Technology
Description: 3-OUTPUT MEMS CLOCK GEN, 23.9998
Description: 3-OUTPUT MEMS CLOCK GEN, 23.9998
товар відсутній
DSC613PE1A-017Q |
Виробник: Microchip Technology
Description: 3-OUTPUT MEMS CLOCK GEN, 23.9998
Description: 3-OUTPUT MEMS CLOCK GEN, 23.9998
товар відсутній
JANTXV1N1188 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 110 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 110 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
JAN1N1188R |
Виробник: Microchip Technology
Description: DIODE GEN PURP REV 400V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 110 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP REV 400V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 110 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
JANTXV1N1188R |
Виробник: Microchip Technology
Description: DIODE GEN PURP REV 400V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 110 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP REV 400V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 110 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
1N1188 |
Виробник: Microchip Technology
Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 110 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 110 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
JANTX1N1188 |
Виробник: Microchip Technology
Description: DIODE GEN PURP REV 400V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 110 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP REV 400V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 110 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
1N5806E3 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 1A A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Description: DIODE GEN PURP 150V 1A A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
на замовлення 173 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 379.59 грн |
100+ | 339.47 грн |
TP2104N3-G-P003 |
Виробник: Microchip Technology
Description: MOSFET P-CH 40V 175MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Description: MOSFET P-CH 40V 175MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)TP2104N3-G-P003 |
Виробник: Microchip Technology
Description: MOSFET P-CH 40V 175MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Description: MOSFET P-CH 40V 175MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
на замовлення 2601 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 58.51 грн |
25+ | 47.57 грн |
100+ | 43.14 грн |
HT-MM900AC-6K-EE-30M0000000 |
Виробник: Microchip Technology
Description: HT-MM900AC-6K-EE-30M0000000
Description: HT-MM900AC-6K-EE-30M0000000
товар відсутній
HT-MM900AC-2K-EE-30M0000000 |
Виробник: Microchip Technology
Description: HIGH TEMP MEMS BASED XO +3.3 VDC
Description: HIGH TEMP MEMS BASED XO +3.3 VDC
товар відсутній
HT-MM900AC-6E-EE-30M0000000 |
Виробник: Microchip Technology
Description: HIGH TEMP MEMS BASED XO +3.3 VDC
Description: HIGH TEMP MEMS BASED XO +3.3 VDC
товар відсутній
MO-9000AE-7F-EE-30M0000000 |
Виробник: Microchip Technology
Description: MEMS BASED XO +3.3 VDC -40C TO +
Description: MEMS BASED XO +3.3 VDC -40C TO +
товар відсутній
HT-MM900AF-7K-EE-30M0000000 |
Виробник: Microchip Technology
Description: HIGH TEMP MEMS BASED XO +3.3 VDC
Description: HIGH TEMP MEMS BASED XO +3.3 VDC
товар відсутній
HT-MM900AC-4K-EE-30M0000000 |
Виробник: Microchip Technology
Description: HIGH TEMP MEMS BASED XO +3.3 VDC
Description: HIGH TEMP MEMS BASED XO +3.3 VDC
товар відсутній
HT-MM900AE-7F-EE-30M0000000 |
Виробник: Microchip Technology
Description: HIGH TEMP MEMS BASED XO +3.3 VDC
Description: HIGH TEMP MEMS BASED XO +3.3 VDC
товар відсутній
HT-MM900A7-2K-EE-30M0000000 |
Виробник: Microchip Technology
Description: HIGH TEMP MEMS BASED XO +3.3 VDC
Description: HIGH TEMP MEMS BASED XO +3.3 VDC
товар відсутній
VV-701-EAE-PNEE-30M0000000 |
Виробник: Microchip Technology
Description: LOW FREQUENCY CERAMIC VCXO +3.3
Description: LOW FREQUENCY CERAMIC VCXO +3.3
товар відсутній
HT-MM900AE-4K-EE-30M0000000 |
Виробник: Microchip Technology
Description: HIGH TEMP MEMS BASED XO +3.3 VDC
Description: HIGH TEMP MEMS BASED XO +3.3 VDC
товар відсутній
DSC6001CE1A-027.1780 |
Виробник: Microchip Technology
Description: MEMS OSC XO 27.1780MHZ CMOS SMD
Description: MEMS OSC XO 27.1780MHZ CMOS SMD
товар відсутній
DSC6111CE1A-027.2250T |
Виробник: Microchip Technology
Description: MEMS OSC XO 27.2250MHZ CMOS SMD
Description: MEMS OSC XO 27.2250MHZ CMOS SMD
товар відсутній
DSC6101JI1A-027.0000 |
Виробник: Microchip Technology
Description: MEMS OSC LVCMOS 50PPM 2.5X2.0MM
Description: MEMS OSC LVCMOS 50PPM 2.5X2.0MM
товар відсутній