Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (338413) > Сторінка 1582 з 5641
| Фото | Назва | Виробник | Інформація |
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MAPLAD7.5KP14CA | Microchip Technology |
 Description: TVS DIODE |
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| MAPLAD18KP14CAE3 | Microchip Technology |
Description: TVS DIODE 14VWM 23.2VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 776A Voltage - Reverse Standoff (Typ): 14V Supplier Device Package: PLAD Bidirectional Channels: 1 Voltage - Breakdown (Min): 15.6V Voltage - Clamping (Max) @ Ipp: 23.2V Power - Peak Pulse: 18000W (18kW) Power Line Protection: No Part Status: Active |
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| MXPLAD18KP14AE3 | Microchip Technology |
Description: TVS DIODE 14VWM 23.2VC PLAD |
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| MECH-SAMPLE-CQ256NHS | Microchip Technology | Description: MECH-SAMPLE-CQ256NHS |
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| LG896_DAISY_CHAIN | Microchip Technology | Description: LG896_DAISY_CHAIN |
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| LG484_DAISY_CHAIN | Microchip Technology | Description: LG484_DAISY_CHAIN |
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93AA66AT-I/SN | Microchip Technology |
Description: IC EEPROM 4KBIT MICROWIRE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 6ms Memory Interface: Microwire Memory Organization: 512 x 8 DigiKey Programmable: Verified |
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93AA66AT-I/SN | Microchip Technology |
Description: IC EEPROM 4KBIT MICROWIRE 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 6ms Memory Interface: Microwire Memory Organization: 512 x 8 DigiKey Programmable: Verified |
на замовлення 2700 шт: термін постачання 21-31 дні (днів) |
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93AA56CT-I/SN | Microchip Technology |
Description: IC EEPROM 2KBIT MICROWIRE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 2Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 3 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 6ms Memory Interface: Microwire Memory Organization: 256 x 8, 128 x 16 |
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93AA56CT-I/SN | Microchip Technology |
Description: IC EEPROM 2KBIT MICROWIRE 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 2Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 3 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 6ms Memory Interface: Microwire Memory Organization: 256 x 8, 128 x 16 |
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JANS2N3737UB/TR | Microchip Technology |
Description: TRANS NPN 40V 1.5A UB Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V Supplier Device Package: UB Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 500 mW |
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JAN2N3737UB/TR | Microchip Technology |
Description: TRANS NPN 40V 1.5A 3UB Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V Supplier Device Package: UB Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 500 mW |
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JANTX2N3737UB/TR | Microchip Technology |
Description: TRANS NPN 40V 1.5A UB Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V Supplier Device Package: UB Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 500 mW |
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JANTXV2N3737 | Microchip Technology |
Description: TRANS NPN 40V 1.5A TO46-3 |
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JAN2N3737 | Microchip Technology |
Description: TRANS NPN 40V 1.5A TO46-3 Packaging: Bulk Package / Case: TO-206AB, TO-46-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V Supplier Device Package: TO-46-3 Grade: Military Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 500 mW Qualification: MIL-PRF-19500/395 |
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| JANTX2N3737 | Microchip Technology |
Description: TRANS NPN 40V 1.5A TO46 Packaging: Bulk Package / Case: TO-46-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V Supplier Device Package: TO-46 (TO-206AB) Grade: Military Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 500 mW Qualification: MIL-PRF-19500/395 |
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JANS2N3737UB | Microchip Technology |
Description: TRANS NPN 40V 1.5A UB Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V Supplier Device Package: UB Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 500 mW |
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| JANTXV2N3737UB/TR | Microchip Technology | Description: SMALL-SIGNAL BJT |
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2N3737UB/TR | Microchip Technology |
Description: TRANS NPN 40V 1.5A UB Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V Supplier Device Package: UB Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 500 mW |
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JANTXV2N3737UB | Microchip Technology |
Description: TRANS NPN 40V 1.5A Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V Supplier Device Package: UB Grade: Military Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 500 mW Qualification: MIL-PRF-19500/395 |
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| S306070F | Microchip Technology |
Description: STD RECTIFIER Packaging: Bulk Part Status: Active |
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| R306070F | Microchip Technology |
Description: STD RECTIFIER Packaging: Bulk Part Status: Active |
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| 2N3302 | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Bulk Part Status: Active |
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1N4916A/TR | Microchip Technology |
Description: DIODE ZENER TEMP COMPENSATED Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Zener (Nom) (Vz): 19.2 V Impedance (Max) (Zzt): 600 Ohms Supplier Device Package: DO-35 Part Status: Active Power - Max: 500 mW |
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JANTX1N4110DUR-1 | Microchip Technology |
Description: DIODE ZENER 16V 500MW DO213AA |
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| JANS1N4110CUR-1 | Microchip Technology | Description: ZENER DIODE |
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JANS1N4110UR-1/TR | Microchip Technology | Description: VOLTAGE REGULATOR |
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| JANTXV1N4110CUR-1 | Microchip Technology |
Description: DIODE ZENER 16V 500MW DO213AA |
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JANS1N4110DUR-1/TR | Microchip Technology | Description: VOLTAGE REGULATOR |
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Jantx1N4110-1 | Microchip Technology |
Description: DIODE ZENER 16V 500MW DO35 |
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| JANTXV1N4110DUR-1 | Microchip Technology |
Description: DIODE ZENER 16V 500MW DO213AA |
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JANTXV1N4110CUR-1/TR | Microchip Technology | Description: VOLTAGE REGULATOR |
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| JANS1N4110UR-1 | Microchip Technology | Description: ZENER DIODE |
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| JANTXV1N4110UR-1 | Microchip Technology |
Description: DIODE ZENER 16V 500MW DO213AA |
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JANTX1N4110DUR-1/TR | Microchip Technology | Description: VOLTAGE REGULATOR |
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JANTXV1N4110DUR-1/TR | Microchip Technology | Description: VOLTAGE REGULATOR |
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JANS1N4110CUR-1/TR | Microchip Technology | Description: VOLTAGE REGULATOR |
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JANHCA1N4110 | Microchip Technology | Description: VOLTAGE REGULATOR |
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| JANS1N4110DUR-1 | Microchip Technology | Description: ZENER DIODE |
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JANTX1N4110-1/TR | Microchip Technology |
Description: VOLTAGE REGULATOR |
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JANTX1N4110UR-1/TR | Microchip Technology | Description: VOLTAGE REGULATOR |
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JANTX1N4110CUR-1/TR | Microchip Technology | Description: VOLTAGE REGULATOR |
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JANTXV1N4110UR-1/TR | Microchip Technology | Description: VOLTAGE REGULATOR |
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JANTX1N4110CUR-1 | Microchip Technology |
Description: DIODE ZENER 16V 500MW DO213AA |
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JANTX1N4110C-1 | Microchip Technology |
Description: DIODE ZENER 16V 500MW DO35 |
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| JANKCA1N4110 | Microchip Technology | Description: VOLTAGE REGULATOR |
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JANTXV1N4110D-1/TR | Microchip Technology |
Description: VOLTAGE REGULATOR |
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| JANS1N4110-1 | Microchip Technology | Description: ZENER DIODE |
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JANTX1N4110C-1/TR | Microchip Technology |
Description: VOLTAGE REGULATOR |
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JANTXV1N4110-1/TR | Microchip Technology |
Description: VOLTAGE REGULATOR |
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JANTX1N4110D-1/TR | Microchip Technology |
Description: VOLTAGE REGULATOR |
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JANS1N4110D-1/TR | Microchip Technology |
Description: VOLTAGE REGULATOR |
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JANTXV1N4110-1 | Microchip Technology |
Description: DIODE ZENER 16V 500MW DO35 |
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JANTXV1N4110D-1 | Microchip Technology |
Description: DIODE ZENER 16V 500MW DO35 |
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JANS1N4110-1/TR | Microchip Technology |
Description: VOLTAGE REGULATOR |
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JANS1N4110C-1/TR | Microchip Technology |
Description: VOLTAGE REGULATOR |
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| JANS1N4110D-1 | Microchip Technology | Description: ZENER DIODE |
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JANTXV1N4110C-1 | Microchip Technology |
Description: DIODE ZENER 16V 500MW DO35 |
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JANTXV1N4110C-1/TR | Microchip Technology |
Description: VOLTAGE REGULATOR |
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JANTX1N4110D-1 | Microchip Technology |
Description: DIODE ZENER 16V 500MW DO35 |
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| MAPLAD18KP14CAE3 |
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Виробник: Microchip Technology
Description: TVS DIODE 14VWM 23.2VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 776A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 18000W (18kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 14VWM 23.2VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 776A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 18000W (18kW)
Power Line Protection: No
Part Status: Active
товар відсутній
| MXPLAD18KP14AE3 |
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Виробник: Microchip Technology
Description: TVS DIODE 14VWM 23.2VC PLAD
Description: TVS DIODE 14VWM 23.2VC PLAD
товар відсутній
| MECH-SAMPLE-CQ256NHS |
Виробник: Microchip Technology
Description: MECH-SAMPLE-CQ256NHS
Description: MECH-SAMPLE-CQ256NHS
товар відсутній
| 93AA66AT-I/SN |
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Виробник: Microchip Technology
Description: IC EEPROM 4KBIT MICROWIRE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 512 x 8
DigiKey Programmable: Verified
Description: IC EEPROM 4KBIT MICROWIRE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 512 x 8
DigiKey Programmable: Verified
товар відсутній
| 93AA66AT-I/SN |
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Виробник: Microchip Technology
Description: IC EEPROM 4KBIT MICROWIRE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 512 x 8
DigiKey Programmable: Verified
Description: IC EEPROM 4KBIT MICROWIRE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 512 x 8
DigiKey Programmable: Verified
на замовлення 2700 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 24.94 грн |
| 25+ | 23.33 грн |
| 100+ | 22.65 грн |
| 93AA56CT-I/SN |
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Виробник: Microchip Technology
Description: IC EEPROM 2KBIT MICROWIRE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 256 x 8, 128 x 16
Description: IC EEPROM 2KBIT MICROWIRE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 256 x 8, 128 x 16
товар відсутній
| 93AA56CT-I/SN |
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Виробник: Microchip Technology
Description: IC EEPROM 2KBIT MICROWIRE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 256 x 8, 128 x 16
Description: IC EEPROM 2KBIT MICROWIRE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 256 x 8, 128 x 16
товар відсутній
| JANS2N3737UB/TR |
Виробник: Microchip Technology
Description: TRANS NPN 40V 1.5A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Description: TRANS NPN 40V 1.5A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
товар відсутній
| JAN2N3737UB/TR |
Виробник: Microchip Technology
Description: TRANS NPN 40V 1.5A 3UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Description: TRANS NPN 40V 1.5A 3UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
товар відсутній
| JANTX2N3737UB/TR |
Виробник: Microchip Technology
Description: TRANS NPN 40V 1.5A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Description: TRANS NPN 40V 1.5A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
товар відсутній
| JAN2N3737 |
|
Виробник: Microchip Technology
Description: TRANS NPN 40V 1.5A TO46-3
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: TO-46-3
Grade: Military
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/395
Description: TRANS NPN 40V 1.5A TO46-3
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: TO-46-3
Grade: Military
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/395
товар відсутній
| JANTX2N3737 |
|
Виробник: Microchip Technology
Description: TRANS NPN 40V 1.5A TO46
Packaging: Bulk
Package / Case: TO-46-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: TO-46 (TO-206AB)
Grade: Military
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/395
Description: TRANS NPN 40V 1.5A TO46
Packaging: Bulk
Package / Case: TO-46-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: TO-46 (TO-206AB)
Grade: Military
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/395
товар відсутній
| JANS2N3737UB |
Виробник: Microchip Technology
Description: TRANS NPN 40V 1.5A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Description: TRANS NPN 40V 1.5A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
товар відсутній
| 2N3737UB/TR |
Виробник: Microchip Technology
Description: TRANS NPN 40V 1.5A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Description: TRANS NPN 40V 1.5A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
товар відсутній
| JANTXV2N3737UB |
|
Виробник: Microchip Technology
Description: TRANS NPN 40V 1.5A
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/395
Description: TRANS NPN 40V 1.5A
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/395
товар відсутній
| S306070F |
товар відсутній
| R306070F |
товар відсутній
| 2N3302 |
товар відсутній
| 1N4916A/TR |
|
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Zener (Nom) (Vz): 19.2 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Description: DIODE ZENER TEMP COMPENSATED
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Zener (Nom) (Vz): 19.2 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
товар відсутній
| JANTX1N4110DUR-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 16V 500MW DO213AA
Description: DIODE ZENER 16V 500MW DO213AA
товар відсутній
| JANTXV1N4110CUR-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 16V 500MW DO213AA
Description: DIODE ZENER 16V 500MW DO213AA
товар відсутній
| JANTXV1N4110DUR-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 16V 500MW DO213AA
Description: DIODE ZENER 16V 500MW DO213AA
товар відсутній
| JANTXV1N4110UR-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 16V 500MW DO213AA
Description: DIODE ZENER 16V 500MW DO213AA
товар відсутній
| JANTX1N4110CUR-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 16V 500MW DO213AA
Description: DIODE ZENER 16V 500MW DO213AA
товар відсутній
| JANTX1N4110C-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 16V 500MW DO35
Description: DIODE ZENER 16V 500MW DO35
товар відсутній
| JANTXV1N4110-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 16V 500MW DO35
Description: DIODE ZENER 16V 500MW DO35
товар відсутній
| JANTXV1N4110D-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 16V 500MW DO35
Description: DIODE ZENER 16V 500MW DO35
товар відсутній
| JANTXV1N4110C-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 16V 500MW DO35
Description: DIODE ZENER 16V 500MW DO35
товар відсутній
| JANTX1N4110D-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 16V 500MW DO35
Description: DIODE ZENER 16V 500MW DO35
товар відсутній