Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (337388) > Сторінка 1583 з 5624
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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JANTXV1N5418US | Microchip Technology |
 Description: DIODE GEN PURP 400V 3A D-5BPackaging: Bulk Package / Case: SQ-MELF, E Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V Qualification: MIL-PRF-19500/411 |
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JANS1N5418/TR | Microchip Technology |
Description: DIODE GEN PURP 400V 3A Packaging: Tape & Reel (TR) Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 165pF @ 4V Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V Qualification: MIL-PRF-19500/411 |
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JANS1N5415 | Microchip Technology | Description: RECTIFIER DIODE |
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JAN1N5417US/TR | Microchip Technology |
Description: DIODE STANDARD 200V 3A B SQMELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V Qualification: MIL-PRF-19500/411 |
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JANS1N5417US/TR | Microchip Technology |
Description: DIODE STANDARD 200V 3A B SQMELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V Qualification: MIL-PRF-19500/411 |
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JANTXV1N5417US/TR | Microchip Technology |
Description: DIODE STANDARD 200V 3A D5B Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, E Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V Qualification: MIL-PRF-19500/411 |
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JANS1N5417US | Microchip Technology |
Description: DIODE STANDARD 200V 3A B SQMELF Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V Qualification: MIL-PRF-19500/411 |
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JANTXV1N5415US/TR | Microchip Technology | Description: RECTIFIER UFR,FRR |
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JANTXV1N5417US | Microchip Technology |
Description: DIODE STANDARD 200V 3A D5B Packaging: Bulk Package / Case: SQ-MELF, E Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V Qualification: MIL-PRF-19500/411 |
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JANTXV1N5418US/TR | Microchip Technology |
Description: DIODE GEN PURP 400V 3A D-5B Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, E Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V Qualification: MIL-PRF-19500/411 |
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| 1N4454UR | Microchip Technology |
Description: DIODE GP 75V 200MA DO213AA Packaging: Bulk Package / Case: DO-213AA Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: DO-213AA Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
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| UM7302B | Microchip Technology |
Description: SI PPIN HERMETIC GLASS AXIAL Packaging: Tape & Reel (TR) Package / Case: Axial Diode Type: PIN - Single Capacitance @ Vr, F: 0.7pF @ 100V, 1MHz Resistance @ If, F: 3Ohm @ 100mA, 100MHz Voltage - Peak Reverse (Max): 200V Supplier Device Package: Axial Power Dissipation (Max): 4 W |
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| VCC1-B3D-3M68640000 | Microchip Technology |
Description: CMOS XO +3.3 VDC 15PF -40C TO +8 |
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| VCC1-A3D-3M68400000 | Microchip Technology |
Description: CMOS XO +5.0 VDC 15PF -40C TO +8 |
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| VCC1-B3D-3M68600000 | Microchip Technology |
Description: CMOS XO +3.3 VDC 15PF -40C TO +8 |
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MASMBJ120CAe3 | Microchip Technology |
Description: TVS DIODE 120VWM 193VC SMBJ Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 3.1A Voltage - Reverse Standoff (Typ): 120V Supplier Device Package: SMBJ (DO-214AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 133V Voltage - Clamping (Max) @ Ipp: 193V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
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MSMCJLCE43A | Microchip Technology |
Description: TVS DIODE 43VWM 69.4VC DO214AB |
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MSMCJLCE90Ae3 | Microchip Technology |
Description: TVS DIODE 90VWM 146VC DO214AB |
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MSMCJLCE24A | Microchip Technology |
Description: TVS DIODE 24VWM 38.9VC DO214AB |
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| JANS2N2920U | Microchip Technology |
Description: NPN SMALL SIGNAL SILICON TRANSIS Packaging: Bulk Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Supplier Device Package: 6-SMD Grade: Military Qualification: MIL-PRF-19500/355 |
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JANSR2N2920U/TR | Microchip Technology |
Description: TRANSISTOR RH DUAL - SMALL-SIGNA Packaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Supplier Device Package: 6-SMD Grade: Military Qualification: MIL-PRF-19500/355 |
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JANKCA2N2920 | Microchip Technology |
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: TO-78-6 Metal Can Mounting Type: Through Hole Transistor Type: 2 NPN (Dual) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Supplier Device Package: TO-78-6 Grade: Military Qualification: MIL-PRF-19500/355 |
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JANS2N2920U/TR | Microchip Technology |
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Supplier Device Package: 6-SMD Grade: Military Qualification: MIL-PRF-19500/355 |
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JANS2N2920L | Microchip Technology |
Description: NPN SMALL SIGNAL SILICON TRANSIS Packaging: Bulk Package / Case: TO-78-6 Metal Can Mounting Type: Through Hole Transistor Type: 2 NPN (Dual) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Supplier Device Package: TO-78-6 Grade: Military Qualification: MIL-PRF-19500/355 |
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JAN2N2920 | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk Package / Case: TO-78-6 Metal Can Mounting Type: Through Hole Transistor Type: 2 NPN (Dual) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Supplier Device Package: TO-78-6 Grade: Military Qualification: MIL-PRF-19500/355 |
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~~6.jpg "JAN2N2920U/TR") |
JAN2N2920U/TR | Microchip Technology |
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Supplier Device Package: U Grade: Military Qualification: MIL-PRF-19500/355 |
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JANTXV2N2920U/TR | Microchip Technology |
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Supplier Device Package: 6-SMD Grade: Military Qualification: MIL-PRF-19500/355 |
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| JANSF2N2920 | Microchip Technology | Description: RH SMALL-SIGNAL BJT |
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| JANSR2N2920 | Microchip Technology | Description: RH SMALL-SIGNAL BJT |
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| JANTX2N2920A | Microchip Technology | Description: DUAL SMALL-SIGNAL BJT |
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| R2N2920A | Microchip Technology |
Description: RH DUAL - SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-78-6 Metal Can Mounting Type: Through Hole Transistor Type: 2 NPN (Dual) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Supplier Device Package: TO-78-6 |
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| JANSR2N2920L | Microchip Technology | Description: RH SMALL-SIGNAL BJT |
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| JANTXV2N2920A | Microchip Technology | Description: DUAL SMALL-SIGNAL BJT |
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2N2920U/TR | Microchip Technology |
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Supplier Device Package: 6-SMD |
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| JANTX2N2920U/TR | Microchip Technology | Description: DUAL SMALL-SIGNAL BJT |
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| JANSF2N2920L | Microchip Technology | Description: RH SMALL-SIGNAL BJT |
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| JAN2N2920A | Microchip Technology | Description: DUAL SMALL-SIGNAL BJT |
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2N5794 | Microchip Technology |
Description: NPN TRANSISTOR |
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JAN2N5794 | Microchip Technology | Description: NPN TRANSISTOR |
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JAN2N5794AUC/TR | Microchip Technology | Description: TRANSISTOR DUAL SMALL-SIGNAL BJT |
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| JANTXV2N5794AUC | Microchip Technology | Description: NPN TRANSISTOR |
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| JANTXV2N5794U | Microchip Technology | Description: NPN TRANSISTOR |
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| JAN2N5794U | Microchip Technology | Description: NPN TRANSISTOR |
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JANTXV2N5794UC/TR | Microchip Technology | Description: TRANSISTOR SMALL-SIGNAL BJT |
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JAN2N5794A | Microchip Technology | Description: NPN TRANSISTOR |
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JANTXV2N5794A | Microchip Technology | Description: NPN TRANSISTOR |
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| JANTX2N5794AUC | Microchip Technology | Description: PNP TRANSISTOR |
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JANTX2N5794A | Microchip Technology | Description: PNP TRANSISTOR |
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| JANS2N5794UC | Microchip Technology | Description: DUAL SMALL-SIGNAL BJT |
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| 2N5794AU | Microchip Technology | Description: DUAL SMALL-SIGNAL BJT |
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| JANTX2N5794UC/TR | Microchip Technology | Description: DUAL SMALL-SIGNAL BJT |
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| 2N5794UC/TR | Microchip Technology | Description: DUAL SMALL-SIGNAL BJT |
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| JANS2N5794U | Microchip Technology | Description: DUAL SMALL-SIGNAL BJT |
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| JANS2N5794U/TR | Microchip Technology | Description: DUAL SMALL-SIGNAL BJT |
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| JAN2N5794UC/TR | Microchip Technology | Description: DUAL SMALL-SIGNAL BJT |
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| JANS2N5794UC/TR | Microchip Technology | Description: DUAL SMALL-SIGNAL BJT |
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| 2N5794A | Microchip Technology | Description: DUAL SMALL-SIGNAL BJT |
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| 2N5794UC | Microchip Technology | Description: DUAL SMALL-SIGNAL BJT |
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| JANTXV2N5794U/TR | Microchip Technology | Description: DUAL SMALL-SIGNAL BJT |
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| 2N5794AU/TR | Microchip Technology | Description: DUAL SMALL-SIGNAL BJT |
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| JANTXV1N5418US |
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Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: MIL-PRF-19500/411
Description: DIODE GEN PURP 400V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: MIL-PRF-19500/411
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| JANS1N5418/TR |
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Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 3A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 165pF @ 4V
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: MIL-PRF-19500/411
Description: DIODE GEN PURP 400V 3A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 165pF @ 4V
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: MIL-PRF-19500/411
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| JANS1N5415 |
Виробник: Microchip Technology
Description: RECTIFIER DIODE
Description: RECTIFIER DIODE
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| JAN1N5417US/TR |
Виробник: Microchip Technology
Description: DIODE STANDARD 200V 3A B SQMELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: MIL-PRF-19500/411
Description: DIODE STANDARD 200V 3A B SQMELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: MIL-PRF-19500/411
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| JANS1N5417US/TR |
Виробник: Microchip Technology
Description: DIODE STANDARD 200V 3A B SQMELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/411
Description: DIODE STANDARD 200V 3A B SQMELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/411
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| JANTXV1N5417US/TR |
Виробник: Microchip Technology
Description: DIODE STANDARD 200V 3A D5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: MIL-PRF-19500/411
Description: DIODE STANDARD 200V 3A D5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: MIL-PRF-19500/411
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| JANS1N5417US |
Виробник: Microchip Technology
Description: DIODE STANDARD 200V 3A B SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/411
Description: DIODE STANDARD 200V 3A B SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/411
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| JANTXV1N5415US/TR |
Виробник: Microchip Technology
Description: RECTIFIER UFR,FRR
Description: RECTIFIER UFR,FRR
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| JANTXV1N5417US |
|
Виробник: Microchip Technology
Description: DIODE STANDARD 200V 3A D5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: MIL-PRF-19500/411
Description: DIODE STANDARD 200V 3A D5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: MIL-PRF-19500/411
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| JANTXV1N5418US/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: MIL-PRF-19500/411
Description: DIODE GEN PURP 400V 3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: MIL-PRF-19500/411
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| 1N4454UR |
|
Виробник: Microchip Technology
Description: DIODE GP 75V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE GP 75V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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| UM7302B |
|
Виробник: Microchip Technology
Description: SI PPIN HERMETIC GLASS AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Diode Type: PIN - Single
Capacitance @ Vr, F: 0.7pF @ 100V, 1MHz
Resistance @ If, F: 3Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 200V
Supplier Device Package: Axial
Power Dissipation (Max): 4 W
Description: SI PPIN HERMETIC GLASS AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Diode Type: PIN - Single
Capacitance @ Vr, F: 0.7pF @ 100V, 1MHz
Resistance @ If, F: 3Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 200V
Supplier Device Package: Axial
Power Dissipation (Max): 4 W
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| VCC1-B3D-3M68640000 |
|
Виробник: Microchip Technology
Description: CMOS XO +3.3 VDC 15PF -40C TO +8
Description: CMOS XO +3.3 VDC 15PF -40C TO +8
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| VCC1-A3D-3M68400000 |
|
Виробник: Microchip Technology
Description: CMOS XO +5.0 VDC 15PF -40C TO +8
Description: CMOS XO +5.0 VDC 15PF -40C TO +8
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| VCC1-B3D-3M68600000 |
|
Виробник: Microchip Technology
Description: CMOS XO +3.3 VDC 15PF -40C TO +8
Description: CMOS XO +3.3 VDC 15PF -40C TO +8
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| MASMBJ120CAe3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 120VWM 193VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.1A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: SMBJ (DO-214AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 120VWM 193VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.1A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: SMBJ (DO-214AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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| MSMCJLCE43A |
|
Виробник: Microchip Technology
Description: TVS DIODE 43VWM 69.4VC DO214AB
Description: TVS DIODE 43VWM 69.4VC DO214AB
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| MSMCJLCE90Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 90VWM 146VC DO214AB
Description: TVS DIODE 90VWM 146VC DO214AB
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| MSMCJLCE24A |
|
Виробник: Microchip Technology
Description: TVS DIODE 24VWM 38.9VC DO214AB
Description: TVS DIODE 24VWM 38.9VC DO214AB
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| JANS2N2920U |
Виробник: Microchip Technology
Description: NPN SMALL SIGNAL SILICON TRANSIS
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/355
Description: NPN SMALL SIGNAL SILICON TRANSIS
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/355
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| JANSR2N2920U/TR |
Виробник: Microchip Technology
Description: TRANSISTOR RH DUAL - SMALL-SIGNA
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/355
Description: TRANSISTOR RH DUAL - SMALL-SIGNA
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/355
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| JANKCA2N2920 |
Виробник: Microchip Technology
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/355
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/355
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| JANS2N2920U/TR |
|
Виробник: Microchip Technology
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/355
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/355
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| JANS2N2920L |
Виробник: Microchip Technology
Description: NPN SMALL SIGNAL SILICON TRANSIS
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/355
Description: NPN SMALL SIGNAL SILICON TRANSIS
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/355
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| JAN2N2920 |
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/355
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/355
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| JAN2N2920U/TR |
|
Виробник: Microchip Technology
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Supplier Device Package: U
Grade: Military
Qualification: MIL-PRF-19500/355
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Supplier Device Package: U
Grade: Military
Qualification: MIL-PRF-19500/355
товару немає в наявності
В кошику
од. на суму грн.
| JANTXV2N2920U/TR |
|
Виробник: Microchip Technology
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/355
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/355
товару немає в наявності
В кошику
од. на суму грн.
| JANSF2N2920 |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Description: RH SMALL-SIGNAL BJT
товару немає в наявності
В кошику
од. на суму грн.
| JANSR2N2920 |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Description: RH SMALL-SIGNAL BJT
товару немає в наявності
В кошику
од. на суму грн.
| JANTX2N2920A |
Виробник: Microchip Technology
Description: DUAL SMALL-SIGNAL BJT
Description: DUAL SMALL-SIGNAL BJT
товару немає в наявності
В кошику
од. на суму грн.
| R2N2920A |
Виробник: Microchip Technology
Description: RH DUAL - SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Supplier Device Package: TO-78-6
Description: RH DUAL - SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Supplier Device Package: TO-78-6
товару немає в наявності
В кошику
од. на суму грн.
| JANSR2N2920L |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Description: RH SMALL-SIGNAL BJT
товару немає в наявності
В кошику
од. на суму грн.
| JANTXV2N2920A |
Виробник: Microchip Technology
Description: DUAL SMALL-SIGNAL BJT
Description: DUAL SMALL-SIGNAL BJT
товару немає в наявності
В кошику
од. на суму грн.
| 2N2920U/TR |
|
Виробник: Microchip Technology
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Supplier Device Package: 6-SMD
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Supplier Device Package: 6-SMD
товару немає в наявності
В кошику
од. на суму грн.
| JANTX2N2920U/TR |
Виробник: Microchip Technology
Description: DUAL SMALL-SIGNAL BJT
Description: DUAL SMALL-SIGNAL BJT
товару немає в наявності
В кошику
од. на суму грн.
| JANSF2N2920L |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Description: RH SMALL-SIGNAL BJT
товару немає в наявності
В кошику
од. на суму грн.
| JAN2N2920A |
Виробник: Microchip Technology
Description: DUAL SMALL-SIGNAL BJT
Description: DUAL SMALL-SIGNAL BJT
товару немає в наявності
В кошику
од. на суму грн.
| 2N5794 |
|
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Description: NPN TRANSISTOR
товару немає в наявності
В кошику
од. на суму грн.
| JAN2N5794 |
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Description: NPN TRANSISTOR
товару немає в наявності
В кошику
од. на суму грн.
| JAN2N5794AUC/TR |
Виробник: Microchip Technology
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
товару немає в наявності
В кошику
од. на суму грн.
| JANTXV2N5794AUC |
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Description: NPN TRANSISTOR
товару немає в наявності
В кошику
од. на суму грн.
| JANTXV2N5794U |
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Description: NPN TRANSISTOR
товару немає в наявності
В кошику
од. на суму грн.
| JAN2N5794U |
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Description: NPN TRANSISTOR
товару немає в наявності
В кошику
од. на суму грн.
| JANTXV2N5794UC/TR |
Виробник: Microchip Technology
Description: TRANSISTOR SMALL-SIGNAL BJT
Description: TRANSISTOR SMALL-SIGNAL BJT
товару немає в наявності
В кошику
од. на суму грн.
| JAN2N5794A |
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Description: NPN TRANSISTOR
товару немає в наявності
В кошику
од. на суму грн.
| JANTXV2N5794A |
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Description: NPN TRANSISTOR
товару немає в наявності
В кошику
од. на суму грн.
| JANTX2N5794AUC |
Виробник: Microchip Technology
Description: PNP TRANSISTOR
Description: PNP TRANSISTOR
товару немає в наявності
В кошику
од. на суму грн.
| JANTX2N5794A |
Виробник: Microchip Technology
Description: PNP TRANSISTOR
Description: PNP TRANSISTOR
товару немає в наявності
В кошику
од. на суму грн.
| JANS2N5794UC |
Виробник: Microchip Technology
Description: DUAL SMALL-SIGNAL BJT
Description: DUAL SMALL-SIGNAL BJT
товару немає в наявності
В кошику
од. на суму грн.
| 2N5794AU |
Виробник: Microchip Technology
Description: DUAL SMALL-SIGNAL BJT
Description: DUAL SMALL-SIGNAL BJT
товару немає в наявності
В кошику
од. на суму грн.
| JANTX2N5794UC/TR |
Виробник: Microchip Technology
Description: DUAL SMALL-SIGNAL BJT
Description: DUAL SMALL-SIGNAL BJT
товару немає в наявності
В кошику
од. на суму грн.
| 2N5794UC/TR |
Виробник: Microchip Technology
Description: DUAL SMALL-SIGNAL BJT
Description: DUAL SMALL-SIGNAL BJT
товару немає в наявності
В кошику
од. на суму грн.
| JANS2N5794U |
Виробник: Microchip Technology
Description: DUAL SMALL-SIGNAL BJT
Description: DUAL SMALL-SIGNAL BJT
товару немає в наявності
В кошику
од. на суму грн.
| JANS2N5794U/TR |
Виробник: Microchip Technology
Description: DUAL SMALL-SIGNAL BJT
Description: DUAL SMALL-SIGNAL BJT
товару немає в наявності
В кошику
од. на суму грн.
| JAN2N5794UC/TR |
Виробник: Microchip Technology
Description: DUAL SMALL-SIGNAL BJT
Description: DUAL SMALL-SIGNAL BJT
товару немає в наявності
В кошику
од. на суму грн.
| JANS2N5794UC/TR |
Виробник: Microchip Technology
Description: DUAL SMALL-SIGNAL BJT
Description: DUAL SMALL-SIGNAL BJT
товару немає в наявності
В кошику
од. на суму грн.
| 2N5794A |
Виробник: Microchip Technology
Description: DUAL SMALL-SIGNAL BJT
Description: DUAL SMALL-SIGNAL BJT
товару немає в наявності
В кошику
од. на суму грн.
| 2N5794UC |
Виробник: Microchip Technology
Description: DUAL SMALL-SIGNAL BJT
Description: DUAL SMALL-SIGNAL BJT
товару немає в наявності
В кошику
од. на суму грн.
| JANTXV2N5794U/TR |
Виробник: Microchip Technology
Description: DUAL SMALL-SIGNAL BJT
Description: DUAL SMALL-SIGNAL BJT
товару немає в наявності
В кошику
од. на суму грн.
| 2N5794AU/TR |
Виробник: Microchip Technology
Description: DUAL SMALL-SIGNAL BJT
Description: DUAL SMALL-SIGNAL BJT
товару немає в наявності
В кошику
од. на суму грн.