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JANS2N5151 JANS2N5151 Microchip Technology Description: TRANS PNP 80V 2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/545
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JANKCCF2N5151 JANKCCF2N5151 Microchip Technology Description: TRANS PNP 80V 2A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/545
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JANSF2N5151 JANSF2N5151 Microchip Technology Description: TRANS PNP 80V 2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/545
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JANTX2N5151U3 JANTX2N5151U3 Microchip Technology Description: TRANS PNP 80V 2A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
Grade: Military
Qualification: MIL-PRF-19500/545
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JANKCC2N5151 JANKCC2N5151 Microchip Technology Description: TRANS PNP 80V 2A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/545
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JANTXV2N5151U3 JANTXV2N5151U3 Microchip Technology Description: TRANS PNP 80V 2A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
Grade: Military
Qualification: MIL-PRF-19500/545
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JAN2N5151U3 JAN2N5151U3 Microchip Technology Description: TRANS PNP 80V 2A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
Grade: Military
Qualification: MIL-PRF-19500/545
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JANKCCR2N5151 JANKCCR2N5151 Microchip Technology Description: TRANS PNP 80V 2A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/545
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JANSM2N5151U3 Microchip Technology Description: RH POWER BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
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JANSL2N5151 JANSL2N5151 Microchip Technology Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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JANSR2N5151U3 Microchip Technology Description: RH POWER BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
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JANKCCL2N5151 JANKCCL2N5151 Microchip Technology Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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JANSR2N5151 JANSR2N5151 Microchip Technology Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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JANSD2N5151 JANSD2N5151 Microchip Technology Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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JANSL2N5151U3 Microchip Technology Description: RH POWER BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
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JANSP2N5151 JANSP2N5151 Microchip Technology Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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JANSF2N5151U3 Microchip Technology Description: RH POWER BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
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JANS2N5151U3 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
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JANKCCP2N5151 JANKCCP2N5151 Microchip Technology Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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JANSD2N5151U3 Microchip Technology Description: RH POWER BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
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JANKCCD2N5151 JANKCCD2N5151 Microchip Technology Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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JANSP2N5151U3 Microchip Technology Description: RH POWER BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
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2N5151U3 2N5151U3 Microchip Technology Description: TRANS PNP 80V 2A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
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JANSM2N5151 JANSM2N5151 Microchip Technology Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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JANKCCM2N5151 JANKCCM2N5151 Microchip Technology Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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2N5322E3 2N5322E3 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 75 V
Power - Max: 10 W
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AVR16DD14-I/SL AVR16DD14-I/SL Microchip Technology AVR32-16DD20-14-Complete-DataSheet-DS40002413.pdf Description: IC MCU 8BIT 16KB FLASH 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: AVR
Data Converters: A/D 7x12b; D/A 1x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 14-SOIC
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
на замовлення 3994 шт:
термін постачання 21-31 дні (днів)
6+59.90 грн
25+53.10 грн
100+47.52 грн
Мінімальне замовлення: 6
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ATWINC3400-MR210UA142 ATWINC3400-MR210UA142 Microchip Technology IEEE-802.11-bgn-Network-Controller-with-Integrated-Bluetooth-Low-Energy-Module-Data-Sheet-70005350D.pdf Description: RF TXRX MOD BT WIFIU.FL SMD
Packaging: Tray
Package / Case: 36-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 256kB ROM, 708kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Power - Output: 18.3dBm
Data Rate: 72.2Mbps
Protocol: 802.11b/g/n, Bluetooth v5.0
Current - Receiving: 23.68mA ~ 63.9mA
Current - Transmitting: 23.68mA ~ 275mA
Antenna Type: Antenna Not Included, U.FL
Utilized IC / Part: ATWINC3400
Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DSSS, DQPSK, GFSK, OFDM, QPSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 138 шт:
термін постачання 21-31 дні (днів)
1+1144.88 грн
25+997.93 грн
100+944.72 грн
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ATWINC3400-MR210UA142-T ATWINC3400-MR210UA142-T Microchip Technology IEEE-802.11-bgn-Network-Controller-with-Integrated-Bluetooth-Low-Energy-Module-Data-Sheet-70005350D.pdf Description: RF TXRX MOD BT WIFIU.FL SMD
Packaging: Tape & Reel (TR)
Package / Case: 36-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 256kB ROM, 708kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Power - Output: 18.3dBm
Data Rate: 72.2Mbps
Protocol: 802.11b/g/n, Bluetooth v5.0
Current - Receiving: 23.68mA ~ 63.9mA
Current - Transmitting: 23.68mA ~ 275mA
Antenna Type: Antenna Not Included, U.FL
Utilized IC / Part: ATWINC3400
Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DSSS, DQPSK, GFSK, OFDM, QPSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
50+1034.91 грн
Мінімальне замовлення: 50
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ATWINC3400-MR210UA142-T ATWINC3400-MR210UA142-T Microchip Technology IEEE-802.11-bgn-Network-Controller-with-Integrated-Bluetooth-Low-Energy-Module-Data-Sheet-70005350D.pdf Description: RF TXRX MOD BT WIFIU.FL SMD
Packaging: Cut Tape (CT)
Package / Case: 36-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 256kB ROM, 708kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Power - Output: 18.3dBm
Data Rate: 72.2Mbps
Protocol: 802.11b/g/n, Bluetooth v5.0
Current - Receiving: 23.68mA ~ 63.9mA
Current - Transmitting: 23.68mA ~ 275mA
Antenna Type: Antenna Not Included, U.FL
Utilized IC / Part: ATWINC3400
Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DSSS, DQPSK, GFSK, OFDM, QPSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
на замовлення 325 шт:
термін постачання 21-31 дні (днів)
1+1133.75 грн
25+996.58 грн
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ATWINC3400-MR210CA123 Microchip Technology Description: RX TXRX MODULE WIFI
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ATWINC3400-MR210UA123 Microchip Technology Description: RX TXRX MODULE WIFI
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MXPLAD30KP43Ae3 Microchip Technology 9523-mplad30kp-datasheet Description: TVS DIODE 43VWM 69.4VC PLAD
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MXPLAD30KP51Ae3 Microchip Technology 9523-mplad30kp-datasheet Description: TVS DIODE 51VWM 82.4VC PLAD
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MXPLAD30KP22CAe3 Microchip Technology 9523-mplad30kp-datasheet Description: TVS DIODE 22VWM 36.4VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 822A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 36.4V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
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24CS512T-E/MS66KVAO 24CS512T-E/MS66KVAO Microchip Technology 24CS512-512-Kbit-3.4MHz-I2C-Serial-EEPROM-with-128-Bit-Serial-Number-and-Enhanced-Software-Write-Protection-20005769D.pdf Description: 512K I2C SERIAL EEPROM, EXT, 8-M
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HV20220TQ-G HV20220TQ-G Microchip Technology HV20220%20C071613.pdf Description: 8-CHANNEL HIGH VOLTAGE ANALOG SW
Packaging: Tray
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Applications: Ultrasound
On-State Resistance (Max): 38Ohm
-3db Bandwidth: 50MHz
Supplier Device Package: 48-TQFP (7x7)
Voltage - Supply, Single (V+): 4.5V ~ 13.2V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Part Status: Active
Number of Channels: 8
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HV20220TQ-G-M931 HV20220TQ-G-M931 Microchip Technology HV20220%20C071613.pdf Description: 8-CHANNEL HIGH VOLTAGE ANALOG SW
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Applications: Ultrasound
On-State Resistance (Max): 38Ohm
-3db Bandwidth: 50MHz
Supplier Device Package: 48-TQFP (7x7)
Voltage - Supply, Single (V+): 4.5V ~ 13.2V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Part Status: Active
Number of Channels: 8
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HV20220TQ-G-M931 HV20220TQ-G-M931 Microchip Technology HV20220%20C071613.pdf Description: 8-CHANNEL HIGH VOLTAGE ANALOG SW
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Applications: Ultrasound
On-State Resistance (Max): 38Ohm
-3db Bandwidth: 50MHz
Supplier Device Package: 48-TQFP (7x7)
Voltage - Supply, Single (V+): 4.5V ~ 13.2V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Part Status: Active
Number of Channels: 8
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AT27C010L-70TC AT27C010L-70TC Microchip Technology AT27C010(L).pdf Description: IC EPROM 1MBIT PARALLEL 32TSOP
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Jan2N3485A Microchip Technology 6045-2n3485a-datasheet Description: TRANS PNP 60V 0.6A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-46
Grade: Military
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 400 mW
Qualification: MIL-PRF-19500/392
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Jan2N3498 Jan2N3498 Microchip Technology 124375-lds-0192-datasheet Description: TRANS NPN 100V 0.5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
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Jantxv2N3485A Microchip Technology 6045-2n3485a-datasheet Description: TRANS PNP 60V 0.6A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-46
Grade: Military
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 400 mW
Qualification: MIL-PRF-19500/392
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2N3486 Microchip Technology 2N2904%2CA-2N2907%2CA%2C2N3485%2CA%2C2N3486%2CA.pdf Description: TRANS PNP 60V 0.6A TO-46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-46
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 400 mW
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Jantxv2N3498 Jantxv2N3498 Microchip Technology 124375-lds-0192-datasheet Description: TRANS NPN 100V 0.5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
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2N3485A Microchip Technology 6045-2n3485a-datasheet Description: TRANS PNP 60V 0.6A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-46
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 400 mW
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MSMBJ5349B Microchip Technology Description: VOLTAGE REGULATOR
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MSMBG5349B Microchip Technology Description: VOLTAGE REGULATOR
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MSMBG5349B/TR Microchip Technology Description: VOLTAGE REGULATOR
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MSMBG5349BE3 Microchip Technology Description: VOLTAGE REGULATOR
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MSMBJ5349BE3 Microchip Technology Description: VOLTAGE REGULATOR
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JAN1N4981CUS JAN1N4981CUS Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 91V 5W D5B
Tolerance: ±2%
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 91 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: D-5B
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 69.2 V
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MAP4KE68CAe3 MAP4KE68CAe3 Microchip Technology 9517-mp4ke-pdf Description: TVS DIODE 58.1VWM 92VC DO204AL
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APTMC120TAM34CT3AG Microchip Technology 136406-aptmc120tam34ct3ag-datasheet Description: POWER MODULE - SIC MOSFET
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AVR16DD20-I/REB AVR16DD20-I/REB Microchip Technology AVR64DD32-28-Complete-DataSheet-DS40002315.pdf Description: IC MCU 8BIT 16KB FLASH 20VQFN
Packaging: Tray
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: AVR
Data Converters: A/D 13x12b; D/A 1x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 20-VQFN (3x3)
Part Status: Active
Number of I/O: 16
DigiKey Programmable: Not Verified
на замовлення 168 шт:
термін постачання 21-31 дні (днів)
5+71.02 грн
25+62.33 грн
100+56.24 грн
Мінімальне замовлення: 5
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JANTX1N965DUR-1/TR JANTX1N965DUR-1/TR Microchip Technology 125313-lds-0287-1.pdf Description: DIODE ZENER 15V 500MW DO204AH
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
Qualification: MIL-PRF-19500/117
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JAN1N965DUR-1/TR JAN1N965DUR-1/TR Microchip Technology 125313-lds-0287-1.pdf Description: DIODE ZENER 15V 500MW DO213AA
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
Qualification: MIL-PRF-19500/117
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JANTXV1N965D-1/TR JANTXV1N965D-1/TR Microchip Technology 125314-lds-0287.pdf Description: DIODE ZENER 15V 500MW DO204AH
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
Qualification: MIL-PRF-19500/117
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JANTXV1N965DUR-1/TR Microchip Technology Description: VOLTAGE REGULATOR
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
Qualification: MIL-PRF-19500/117
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JAN1N965D-1/TR JAN1N965D-1/TR Microchip Technology 125314-lds-0287.pdf Description: DIODE ZENER 15V 500MW DO204AH
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
Qualification: MIL-PRF-19500/117
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JANS2N5151
JANS2N5151
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/545
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JANKCCF2N5151
JANKCCF2N5151
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/545
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JANSF2N5151
JANSF2N5151
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/545
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JANTX2N5151U3
JANTX2N5151U3
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
Grade: Military
Qualification: MIL-PRF-19500/545
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JANKCC2N5151
JANKCC2N5151
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/545
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JANTXV2N5151U3
JANTXV2N5151U3
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
Grade: Military
Qualification: MIL-PRF-19500/545
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JAN2N5151U3
JAN2N5151U3
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
Grade: Military
Qualification: MIL-PRF-19500/545
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JANKCCR2N5151
JANKCCR2N5151
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/545
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JANSM2N5151U3
Виробник: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
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JANSL2N5151
JANSL2N5151
Виробник: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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JANSR2N5151U3
Виробник: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
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JANKCCL2N5151
JANKCCL2N5151
Виробник: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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JANSR2N5151
JANSR2N5151
Виробник: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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JANSD2N5151
JANSD2N5151
Виробник: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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JANSL2N5151U3
Виробник: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
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JANSP2N5151
JANSP2N5151
Виробник: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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JANSF2N5151U3
Виробник: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
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JANS2N5151U3
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
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JANKCCP2N5151
JANKCCP2N5151
Виробник: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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JANSD2N5151U3
Виробник: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
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JANKCCD2N5151
JANKCCD2N5151
Виробник: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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JANSP2N5151U3
Виробник: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
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2N5151U3
2N5151U3
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
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JANSM2N5151
JANSM2N5151
Виробник: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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JANKCCM2N5151
JANKCCM2N5151
Виробник: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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2N5322E3
2N5322E3
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 75 V
Power - Max: 10 W
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AVR16DD14-I/SL AVR32-16DD20-14-Complete-DataSheet-DS40002413.pdf
AVR16DD14-I/SL
Виробник: Microchip Technology
Description: IC MCU 8BIT 16KB FLASH 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: AVR
Data Converters: A/D 7x12b; D/A 1x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 14-SOIC
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
на замовлення 3994 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+59.90 грн
25+53.10 грн
100+47.52 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
ATWINC3400-MR210UA142 IEEE-802.11-bgn-Network-Controller-with-Integrated-Bluetooth-Low-Energy-Module-Data-Sheet-70005350D.pdf
ATWINC3400-MR210UA142
Виробник: Microchip Technology
Description: RF TXRX MOD BT WIFIU.FL SMD
Packaging: Tray
Package / Case: 36-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 256kB ROM, 708kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Power - Output: 18.3dBm
Data Rate: 72.2Mbps
Protocol: 802.11b/g/n, Bluetooth v5.0
Current - Receiving: 23.68mA ~ 63.9mA
Current - Transmitting: 23.68mA ~ 275mA
Antenna Type: Antenna Not Included, U.FL
Utilized IC / Part: ATWINC3400
Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DSSS, DQPSK, GFSK, OFDM, QPSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 138 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1144.88 грн
25+997.93 грн
100+944.72 грн
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ATWINC3400-MR210UA142-T IEEE-802.11-bgn-Network-Controller-with-Integrated-Bluetooth-Low-Energy-Module-Data-Sheet-70005350D.pdf
ATWINC3400-MR210UA142-T
Виробник: Microchip Technology
Description: RF TXRX MOD BT WIFIU.FL SMD
Packaging: Tape & Reel (TR)
Package / Case: 36-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 256kB ROM, 708kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Power - Output: 18.3dBm
Data Rate: 72.2Mbps
Protocol: 802.11b/g/n, Bluetooth v5.0
Current - Receiving: 23.68mA ~ 63.9mA
Current - Transmitting: 23.68mA ~ 275mA
Antenna Type: Antenna Not Included, U.FL
Utilized IC / Part: ATWINC3400
Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DSSS, DQPSK, GFSK, OFDM, QPSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
50+1034.91 грн
Мінімальне замовлення: 50
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ATWINC3400-MR210UA142-T IEEE-802.11-bgn-Network-Controller-with-Integrated-Bluetooth-Low-Energy-Module-Data-Sheet-70005350D.pdf
ATWINC3400-MR210UA142-T
Виробник: Microchip Technology
Description: RF TXRX MOD BT WIFIU.FL SMD
Packaging: Cut Tape (CT)
Package / Case: 36-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 256kB ROM, 708kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Power - Output: 18.3dBm
Data Rate: 72.2Mbps
Protocol: 802.11b/g/n, Bluetooth v5.0
Current - Receiving: 23.68mA ~ 63.9mA
Current - Transmitting: 23.68mA ~ 275mA
Antenna Type: Antenna Not Included, U.FL
Utilized IC / Part: ATWINC3400
Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DSSS, DQPSK, GFSK, OFDM, QPSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
на замовлення 325 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1133.75 грн
25+996.58 грн
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ATWINC3400-MR210CA123
Виробник: Microchip Technology
Description: RX TXRX MODULE WIFI
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ATWINC3400-MR210UA123
Виробник: Microchip Technology
Description: RX TXRX MODULE WIFI
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MXPLAD30KP43Ae3 9523-mplad30kp-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 43VWM 69.4VC PLAD
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MXPLAD30KP51Ae3 9523-mplad30kp-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 51VWM 82.4VC PLAD
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MXPLAD30KP22CAe3 9523-mplad30kp-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 22VWM 36.4VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 822A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 36.4V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
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24CS512T-E/MS66KVAO 24CS512-512-Kbit-3.4MHz-I2C-Serial-EEPROM-with-128-Bit-Serial-Number-and-Enhanced-Software-Write-Protection-20005769D.pdf
24CS512T-E/MS66KVAO
Виробник: Microchip Technology
Description: 512K I2C SERIAL EEPROM, EXT, 8-M
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HV20220TQ-G HV20220%20C071613.pdf
HV20220TQ-G
Виробник: Microchip Technology
Description: 8-CHANNEL HIGH VOLTAGE ANALOG SW
Packaging: Tray
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Applications: Ultrasound
On-State Resistance (Max): 38Ohm
-3db Bandwidth: 50MHz
Supplier Device Package: 48-TQFP (7x7)
Voltage - Supply, Single (V+): 4.5V ~ 13.2V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Part Status: Active
Number of Channels: 8
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HV20220TQ-G-M931 HV20220%20C071613.pdf
HV20220TQ-G-M931
Виробник: Microchip Technology
Description: 8-CHANNEL HIGH VOLTAGE ANALOG SW
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Applications: Ultrasound
On-State Resistance (Max): 38Ohm
-3db Bandwidth: 50MHz
Supplier Device Package: 48-TQFP (7x7)
Voltage - Supply, Single (V+): 4.5V ~ 13.2V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Part Status: Active
Number of Channels: 8
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HV20220TQ-G-M931 HV20220%20C071613.pdf
HV20220TQ-G-M931
Виробник: Microchip Technology
Description: 8-CHANNEL HIGH VOLTAGE ANALOG SW
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Applications: Ultrasound
On-State Resistance (Max): 38Ohm
-3db Bandwidth: 50MHz
Supplier Device Package: 48-TQFP (7x7)
Voltage - Supply, Single (V+): 4.5V ~ 13.2V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Part Status: Active
Number of Channels: 8
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AT27C010L-70TC AT27C010(L).pdf
AT27C010L-70TC
Виробник: Microchip Technology
Description: IC EPROM 1MBIT PARALLEL 32TSOP
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Jan2N3485A 6045-2n3485a-datasheet
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-46
Grade: Military
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 400 mW
Qualification: MIL-PRF-19500/392
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Jan2N3498 124375-lds-0192-datasheet
Jan2N3498
Виробник: Microchip Technology
Description: TRANS NPN 100V 0.5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
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Jantxv2N3485A 6045-2n3485a-datasheet
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-46
Grade: Military
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 400 mW
Qualification: MIL-PRF-19500/392
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2N3486 2N2904%2CA-2N2907%2CA%2C2N3485%2CA%2C2N3486%2CA.pdf
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A TO-46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-46
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 400 mW
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Jantxv2N3498 124375-lds-0192-datasheet
Jantxv2N3498
Виробник: Microchip Technology
Description: TRANS NPN 100V 0.5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
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2N3485A 6045-2n3485a-datasheet
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-46
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 400 mW
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MSMBJ5349B
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
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MSMBG5349B
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
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MSMBG5349B/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
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MSMBG5349BE3
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
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MSMBJ5349BE3
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
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JAN1N4981CUS 11059-sd44a-datasheet
JAN1N4981CUS
Виробник: Microchip Technology
Description: DIODE ZENER 91V 5W D5B
Tolerance: ±2%
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 91 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: D-5B
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 69.2 V
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MAP4KE68CAe3 9517-mp4ke-pdf
MAP4KE68CAe3
Виробник: Microchip Technology
Description: TVS DIODE 58.1VWM 92VC DO204AL
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APTMC120TAM34CT3AG 136406-aptmc120tam34ct3ag-datasheet
Виробник: Microchip Technology
Description: POWER MODULE - SIC MOSFET
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AVR16DD20-I/REB AVR64DD32-28-Complete-DataSheet-DS40002315.pdf
AVR16DD20-I/REB
Виробник: Microchip Technology
Description: IC MCU 8BIT 16KB FLASH 20VQFN
Packaging: Tray
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: AVR
Data Converters: A/D 13x12b; D/A 1x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 20-VQFN (3x3)
Part Status: Active
Number of I/O: 16
DigiKey Programmable: Not Verified
на замовлення 168 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+71.02 грн
25+62.33 грн
100+56.24 грн
Мінімальне замовлення: 5
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JANTX1N965DUR-1/TR 125313-lds-0287-1.pdf
JANTX1N965DUR-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 15V 500MW DO204AH
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
Qualification: MIL-PRF-19500/117
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JAN1N965DUR-1/TR 125313-lds-0287-1.pdf
JAN1N965DUR-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 15V 500MW DO213AA
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
Qualification: MIL-PRF-19500/117
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JANTXV1N965D-1/TR 125314-lds-0287.pdf
JANTXV1N965D-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 15V 500MW DO204AH
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
Qualification: MIL-PRF-19500/117
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JANTXV1N965DUR-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
Qualification: MIL-PRF-19500/117
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JAN1N965D-1/TR 125314-lds-0287.pdf
JAN1N965D-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 15V 500MW DO204AH
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
Qualification: MIL-PRF-19500/117
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