Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (343098) > Сторінка 1601 з 5719
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MCP6V99T-E/ST | Microchip Technology |
Description: IC OPAMP ZER-DRIFT 4CIRC 14TSSOPPackaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Zero-Drift Operating Temperature: -40°C ~ 125°C Current - Supply: 1.1mA Slew Rate: 9.5V/µs Gain Bandwidth Product: 10 MHz Current - Input Bias: 2 pA Voltage - Input Offset: 25 µV Supplier Device Package: 14-TSSOP Part Status: Active Number of Circuits: 4 Current - Output / Channel: 40 mA Voltage - Supply Span (Min): 2.4 V Voltage - Supply Span (Max): 5.5 V |
на замовлення 7447 шт: термін постачання 21-31 дні (днів) |
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JANTXV1N6110AUS | Microchip Technology |
Description: TVS DIODE 11.4VWM 21VC B SQ-MELF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANTXV1N6112AUS | Microchip Technology |
Description: TVS DIODE 13.7VWM 25.1VC SQ-MELF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANTXV1N6112 | Microchip Technology |
Description: TVS DIODE 13.7VWM 26.36VC AXIAL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANTXV1N6111US | Microchip Technology |
Description: TVS DIODE 12.2VWM 23.42V SQ-MELF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANTXV1N6112A | Microchip Technology |
Description: TVS DIODE 13.7VWM 25.1VC AXIAL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANTXV1N6110A | Microchip Technology |
Description: TVS DIODE 11.4VWM 21VC AXIAL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANTXV1N6111A | Microchip Technology |
Description: TVS DIODE 12.2VWM 22.3V AXIALPackaging: Bulk Package / Case: B, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 22.4A Voltage - Reverse Standoff (Typ): 12.2V Supplier Device Package: B, Axial Bidirectional Channels: 1 Voltage - Breakdown (Min): 15.2V Voltage - Clamping (Max) @ Ipp: 22.3V Power - Peak Pulse: 500W Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500/516 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANTXV1N6111AUS | Microchip Technology |
Description: TVS DIODE 12.2VWM 22.3VC SQMELFPackaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 22.4A Voltage - Reverse Standoff (Typ): 12.2V Supplier Device Package: B, SQ-MELF Bidirectional Channels: 1 Voltage - Breakdown (Min): 15.2V Voltage - Clamping (Max) @ Ipp: 22.3V Power - Peak Pulse: 500W Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500/516 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| JANTXV1N6124US | Microchip Technology |
Description: TVS DIODE 42.6VWM 80.85V SQ-MELFPackaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 6.18A Voltage - Reverse Standoff (Typ): 42.6V Supplier Device Package: B, SQ-MELF Bidirectional Channels: 1 Voltage - Breakdown (Min): 50.54V Voltage - Clamping (Max) @ Ipp: 80.85V Power - Peak Pulse: 500W Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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MIC5216-3.3YMM | Microchip Technology |
Description: IC REG LINEAR 3.3V 500MA 8MSOPPackaging: Tube Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 3 µA Voltage - Input (Max): 12V Number of Regulators: 1 Supplier Device Package: 8-MSOP Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Part Status: Active PSRR: 75dB (120Hz) Voltage Dropout (Max): 0.6V @ 500mA Protection Features: Over Current, Over Temperature, Reverse Polarity Current - Supply (Max): 25 mA |
на замовлення 201 шт: термін постачання 21-31 дні (днів) |
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ATMEGA168P-20AU | Microchip Technology |
Description: IC MCU 8BIT 16KB FLASH 32TQFPPackaging: Tray Package / Case: 32-TQFP Mounting Type: Surface Mount Speed: 20MHz Program Memory Size: 16KB (8K x 16) RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 512 x 8 Core Processor: AVR Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: I2C, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 32-TQFP (7x7) Part Status: Active Number of I/O: 23 DigiKey Programmable: Not Verified |
на замовлення 635 шт: термін постачання 21-31 дні (днів) |
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JANSL2N2907A | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| JANSD2N2907AUA | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UA Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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JANSF2N2907AUA | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UA Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| JANSD2N2907AUBC | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UBC Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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MSR2N2907AUA | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UA Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JAN2N2907AUBP | Microchip Technology |
Description: TRANS PNP 60V 0.6A UBPackaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW Grade: Military Qualification: MIL-PRF-19500/291 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANSP2N2907AL | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| JANSH2N2907AUBC | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UBC Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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JANTX2N2907AUBC | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UBC Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANSL2N2907AUB | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANSM2N2907AUB | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANSP2N2907A | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| JANSL2N2907AUBC | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UBC Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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JANKCBL2N2907A | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| MASMCGLCE17Ae3 | Microchip Technology |
Description: TVS DIODE 17VWM 27.6VC SMCGPackaging: Bulk Package / Case: DO-215AB, SMC Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 100pF @ 1MHz Current - Peak Pulse (10/1000µs): 54A Voltage - Reverse Standoff (Typ): 17V Supplier Device Package: SMCG (DO-215AB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 18.9V Voltage - Clamping (Max) @ Ipp: 27.6V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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PIC18F56K42T-I/PT | Microchip Technology |
Description: IC MCU 8BIT 64KB FLASH 48TQFPPackaging: Cut Tape (CT) Package / Case: 48-TQFP Exposed Pad Mounting Type: Surface Mount Speed: 64MHz Program Memory Size: 64KB (32K x 16) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 1K x 8 Core Processor: PIC Data Converters: A/D 43x12b; D/A 1x5b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V Connectivity: I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT Supplier Device Package: 48-TQFP-EP (7x7) Part Status: Active Number of I/O: 44 DigiKey Programmable: Not Verified |
на замовлення 1929 шт: термін постачання 21-31 дні (днів) |
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ATmega644pa-au | Microchip Technology |
Description: IC MCU 8BIT 64KB FLASH 44TQFPPackaging: Tray Package / Case: 44-TQFP Mounting Type: Surface Mount Speed: 20MHz Program Memory Size: 64KB (32K x 16) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: AVR Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 44-TQFP (10x10) Part Status: Active Number of I/O: 32 DigiKey Programmable: Verified |
на замовлення 764 шт: термін постачання 21-31 дні (днів) |
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MSMBG8.5Ae3 | Microchip Technology |
Description: TVS DIODE 8.5VWM 14.4VC SMBG |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MXSMLJ110CA | Microchip Technology |
Description: TVS DIODE 110VWM 177VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MXSMLJ17CA | Microchip Technology |
Description: TVS DIODE 17VWM 27.6VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MXSMLJ10A | Microchip Technology |
Description: TVS DIODE 10VWM 17VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| MXSMLG75Ae3 | Microchip Technology |
Description: TVS DIODE 75VWM 121VC SMLG |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| MXSMLG7.0Ae3 | Microchip Technology |
Description: TVS DIODE 7VWM 12VC SMLGPackaging: Bulk Package / Case: DO-215AB, SMC Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 250A Voltage - Reverse Standoff (Typ): 7V Supplier Device Package: SMLG (DO-215AB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.78V Voltage - Clamping (Max) @ Ipp: 12V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| MXSMLG8.5CA | Microchip Technology |
Description: TVS DIODE 8.5VWM 14.4VC SMLG |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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MXSMLJ10Ae3 | Microchip Technology |
Description: TVS DIODE 10VWM 17VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MXSMLJ170CA | Microchip Technology |
Description: TVS DIODE 170VWM 275VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| MXSMLG7.0CA | Microchip Technology |
Description: TVS DIODE 7VWM 12VC SMLG |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| MXSMLG90CA | Microchip Technology |
Description: TVS DIODE 90VWM 146VC SMLG |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| MXSMLG70CA | Microchip Technology |
Description: TVS DIODE 70VWM 113VC SMLG |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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MXSMLJ120CA | Microchip Technology |
Description: TVS DIODE 120VWM 193VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MXSMLJ10CA | Microchip Technology |
Description: TVS DIODE 10VWM 17VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MXSMLJ130CA | Microchip Technology |
Description: TVS DIODE 130VWM 209VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MXSMLJ100Ae3 | Microchip Technology |
Description: TVS DIODE 100VWM 162VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MXSMLJ17A | Microchip Technology |
Description: TVS DIODE 17VWM 27.6VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MXSMLJ14A | Microchip Technology |
Description: TVS DIODE 14VWM 23.2VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MXSMLJ170CAe3 | Microchip Technology |
Description: TVS DIODE 170VWM 275VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MXSMLJ170Ae3 | Microchip Technology |
Description: TVS DIODE 170VWM 275VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| MXSMLG78Ae3 | Microchip Technology |
Description: TVS DIODE 78VWM 126VC SMLG |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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MXSMLJ110CAe3 | Microchip Technology |
Description: TVS DIODE 110VWM 177VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MXSMLJ15CAE3 | Microchip Technology |
Description: TVS DIODE 15VWM 24.4VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| MIC68200-1.8YML TR | Microchip Technology |
Description: 2A SEQUENCING LDO |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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MIC68200YML TR | Microchip Technology |
Description: 2AMP SEQUENCING LDO WITH TRACKIN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| MIC68200-3.3YML TR | Microchip Technology |
Description: 2A SEQUENCING LDO |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| DSC1223DI2-156M2500T | Microchip Technology |
Description: MEMS OSC SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| DSC1223DA3-100M0000T | Microchip Technology | Description: OSC MEMS LVDS SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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DSC1223NE2-100M0000 | Microchip Technology |
Description: MEMS OSC, LOW JITTER, 100MHZ, LV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
DSC1101CE1-100.0000T | Microchip Technology |
Description: MEMS OSC LOW JITTER 100MHZ LVCMOPackaging: Tape & Reel (TR) Package / Case: 6-VDFN Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Output: CMOS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: -20°C ~ 70°C Frequency Stability: ±50ppm Voltage - Supply: 2.25V ~ 3.6V Current - Supply (Max): 35mA Height - Seated (Max): 0.035" (0.90mm) Frequency: 100 MHz Base Resonator: MEMS |
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В кошику од. на суму грн. | ||||||
| DSC1001CE1-100.0000T | Microchip Technology |
Description: MEMS OSC XO 100.0000MHZ CMOS SMDPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Output: CMOS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: -20°C ~ 70°C Frequency Stability: ±50ppm Voltage - Supply: 1.8V ~ 3.3V Ratings: AEC-Q100 Current - Supply (Max): 10.5mA Height - Seated (Max): 0.035" (0.90mm) Frequency: 100 MHz Base Resonator: MEMS |
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В кошику од. на суму грн. |
| MCP6V99T-E/ST |
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Виробник: Microchip Technology
Description: IC OPAMP ZER-DRIFT 4CIRC 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Zero-Drift
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.1mA
Slew Rate: 9.5V/µs
Gain Bandwidth Product: 10 MHz
Current - Input Bias: 2 pA
Voltage - Input Offset: 25 µV
Supplier Device Package: 14-TSSOP
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 2.4 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP ZER-DRIFT 4CIRC 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Zero-Drift
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.1mA
Slew Rate: 9.5V/µs
Gain Bandwidth Product: 10 MHz
Current - Input Bias: 2 pA
Voltage - Input Offset: 25 µV
Supplier Device Package: 14-TSSOP
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 2.4 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 7447 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 293.47 грн |
| 25+ | 235.99 грн |
| 100+ | 213.99 грн |
| JANTXV1N6110AUS |
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Виробник: Microchip Technology
Description: TVS DIODE 11.4VWM 21VC B SQ-MELF
Description: TVS DIODE 11.4VWM 21VC B SQ-MELF
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| JANTXV1N6112AUS |
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Виробник: Microchip Technology
Description: TVS DIODE 13.7VWM 25.1VC SQ-MELF
Description: TVS DIODE 13.7VWM 25.1VC SQ-MELF
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| JANTXV1N6112 |
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Виробник: Microchip Technology
Description: TVS DIODE 13.7VWM 26.36VC AXIAL
Description: TVS DIODE 13.7VWM 26.36VC AXIAL
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| JANTXV1N6111US |
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Виробник: Microchip Technology
Description: TVS DIODE 12.2VWM 23.42V SQ-MELF
Description: TVS DIODE 12.2VWM 23.42V SQ-MELF
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| JANTXV1N6112A |
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Виробник: Microchip Technology
Description: TVS DIODE 13.7VWM 25.1VC AXIAL
Description: TVS DIODE 13.7VWM 25.1VC AXIAL
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| JANTXV1N6110A |
![]() |
Виробник: Microchip Technology
Description: TVS DIODE 11.4VWM 21VC AXIAL
Description: TVS DIODE 11.4VWM 21VC AXIAL
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| JANTXV1N6111A |
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Виробник: Microchip Technology
Description: TVS DIODE 12.2VWM 22.3V AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 22.4A
Voltage - Reverse Standoff (Typ): 12.2V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500/516
Description: TVS DIODE 12.2VWM 22.3V AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 22.4A
Voltage - Reverse Standoff (Typ): 12.2V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500/516
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В кошику
од. на суму грн.
| JANTXV1N6111AUS |
![]() |
Виробник: Microchip Technology
Description: TVS DIODE 12.2VWM 22.3VC SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 22.4A
Voltage - Reverse Standoff (Typ): 12.2V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500/516
Description: TVS DIODE 12.2VWM 22.3VC SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 22.4A
Voltage - Reverse Standoff (Typ): 12.2V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500/516
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од. на суму грн.
| JANTXV1N6124US |
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Виробник: Microchip Technology
Description: TVS DIODE 42.6VWM 80.85V SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.18A
Voltage - Reverse Standoff (Typ): 42.6V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50.54V
Voltage - Clamping (Max) @ Ipp: 80.85V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 42.6VWM 80.85V SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.18A
Voltage - Reverse Standoff (Typ): 42.6V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50.54V
Voltage - Clamping (Max) @ Ipp: 80.85V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
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В кошику
од. на суму грн.
| MIC5216-3.3YMM |
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Виробник: Microchip Technology
Description: IC REG LINEAR 3.3V 500MA 8MSOP
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 3 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 8-MSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 0.6V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 25 mA
Description: IC REG LINEAR 3.3V 500MA 8MSOP
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 3 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 8-MSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 0.6V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 25 mA
на замовлення 201 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 173.94 грн |
| 25+ | 140.19 грн |
| 100+ | 126.91 грн |
| ATMEGA168P-20AU |
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Виробник: Microchip Technology
Description: IC MCU 8BIT 16KB FLASH 32TQFP
Packaging: Tray
Package / Case: 32-TQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 16KB (8K x 16)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 32-TQFP (7x7)
Part Status: Active
Number of I/O: 23
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 16KB FLASH 32TQFP
Packaging: Tray
Package / Case: 32-TQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 16KB (8K x 16)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 32-TQFP (7x7)
Part Status: Active
Number of I/O: 23
DigiKey Programmable: Not Verified
на замовлення 635 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 295.12 грн |
| 25+ | 259.87 грн |
| 100+ | 235.17 грн |
| JANSL2N2907A |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
товару немає в наявності
В кошику
од. на суму грн.
| JANSD2N2907AUA |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
товару немає в наявності
В кошику
од. на суму грн.
| JANSF2N2907AUA |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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В кошику
од. на суму грн.
| JANSD2N2907AUBC |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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В кошику
од. на суму грн.
| MSR2N2907AUA |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
товару немає в наявності
В кошику
од. на суму грн.
| JAN2N2907AUBP |
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Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
Description: TRANS PNP 60V 0.6A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
товару немає в наявності
В кошику
од. на суму грн.
| JANSP2N2907AL |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
товару немає в наявності
В кошику
од. на суму грн.
| JANSH2N2907AUBC |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
товару немає в наявності
В кошику
од. на суму грн.
| JANTX2N2907AUBC |
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
товару немає в наявності
В кошику
од. на суму грн.
| JANSL2N2907AUB |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
товару немає в наявності
В кошику
од. на суму грн.
| JANSM2N2907AUB |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
товару немає в наявності
В кошику
од. на суму грн.
| JANSP2N2907A |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
товару немає в наявності
В кошику
од. на суму грн.
| JANSL2N2907AUBC |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
товару немає в наявності
В кошику
од. на суму грн.
| JANKCBL2N2907A |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
товару немає в наявності
В кошику
од. на суму грн.
| MASMCGLCE17Ae3 |
![]() |
Виробник: Microchip Technology
Description: TVS DIODE 17VWM 27.6VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 54A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: SMCG (DO-215AB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 17VWM 27.6VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 54A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: SMCG (DO-215AB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| PIC18F56K42T-I/PT |
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Виробник: Microchip Technology
Description: IC MCU 8BIT 64KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 64KB (32K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: PIC
Data Converters: A/D 43x12b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP-EP (7x7)
Part Status: Active
Number of I/O: 44
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 64KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 64KB (32K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: PIC
Data Converters: A/D 43x12b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP-EP (7x7)
Part Status: Active
Number of I/O: 44
DigiKey Programmable: Not Verified
на замовлення 1929 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 183.83 грн |
| 25+ | 163.88 грн |
| 100+ | 148.10 грн |
| ATmega644pa-au |
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Виробник: Microchip Technology
Description: IC MCU 8BIT 64KB FLASH 44TQFP
Packaging: Tray
Package / Case: 44-TQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 64KB (32K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Part Status: Active
Number of I/O: 32
DigiKey Programmable: Verified
Description: IC MCU 8BIT 64KB FLASH 44TQFP
Packaging: Tray
Package / Case: 44-TQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 64KB (32K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Part Status: Active
Number of I/O: 32
DigiKey Programmable: Verified
на замовлення 764 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 458.34 грн |
| 25+ | 405.20 грн |
| 100+ | 367.49 грн |
| MSMBG8.5Ae3 |
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Виробник: Microchip Technology
Description: TVS DIODE 8.5VWM 14.4VC SMBG
Description: TVS DIODE 8.5VWM 14.4VC SMBG
товару немає в наявності
В кошику
од. на суму грн.
| MXSMLJ110CA |
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Виробник: Microchip Technology
Description: TVS DIODE 110VWM 177VC DO214AB
Description: TVS DIODE 110VWM 177VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| MXSMLJ17CA |
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Виробник: Microchip Technology
Description: TVS DIODE 17VWM 27.6VC DO214AB
Description: TVS DIODE 17VWM 27.6VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| MXSMLJ10A |
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Виробник: Microchip Technology
Description: TVS DIODE 10VWM 17VC DO214AB
Description: TVS DIODE 10VWM 17VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| MXSMLG75Ae3 |
![]() |
Виробник: Microchip Technology
Description: TVS DIODE 75VWM 121VC SMLG
Description: TVS DIODE 75VWM 121VC SMLG
товару немає в наявності
В кошику
од. на суму грн.
| MXSMLG7.0Ae3 |
![]() |
Виробник: Microchip Technology
Description: TVS DIODE 7VWM 12VC SMLG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 250A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: SMLG (DO-215AB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 7VWM 12VC SMLG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 250A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: SMLG (DO-215AB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| MXSMLG8.5CA |
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Виробник: Microchip Technology
Description: TVS DIODE 8.5VWM 14.4VC SMLG
Description: TVS DIODE 8.5VWM 14.4VC SMLG
товару немає в наявності
В кошику
од. на суму грн.
| MXSMLJ10Ae3 |
![]() |
Виробник: Microchip Technology
Description: TVS DIODE 10VWM 17VC DO214AB
Description: TVS DIODE 10VWM 17VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| MXSMLJ170CA |
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Виробник: Microchip Technology
Description: TVS DIODE 170VWM 275VC DO214AB
Description: TVS DIODE 170VWM 275VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| MXSMLG7.0CA |
![]() |
Виробник: Microchip Technology
Description: TVS DIODE 7VWM 12VC SMLG
Description: TVS DIODE 7VWM 12VC SMLG
товару немає в наявності
В кошику
од. на суму грн.
| MXSMLG90CA |
![]() |
Виробник: Microchip Technology
Description: TVS DIODE 90VWM 146VC SMLG
Description: TVS DIODE 90VWM 146VC SMLG
товару немає в наявності
В кошику
од. на суму грн.
| MXSMLG70CA |
![]() |
Виробник: Microchip Technology
Description: TVS DIODE 70VWM 113VC SMLG
Description: TVS DIODE 70VWM 113VC SMLG
товару немає в наявності
В кошику
од. на суму грн.
| MXSMLJ120CA |
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Виробник: Microchip Technology
Description: TVS DIODE 120VWM 193VC DO214AB
Description: TVS DIODE 120VWM 193VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| MXSMLJ10CA |
![]() |
Виробник: Microchip Technology
Description: TVS DIODE 10VWM 17VC DO214AB
Description: TVS DIODE 10VWM 17VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| MXSMLJ130CA |
![]() |
Виробник: Microchip Technology
Description: TVS DIODE 130VWM 209VC DO214AB
Description: TVS DIODE 130VWM 209VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| MXSMLJ100Ae3 |
![]() |
Виробник: Microchip Technology
Description: TVS DIODE 100VWM 162VC DO214AB
Description: TVS DIODE 100VWM 162VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| MXSMLJ17A |
![]() |
Виробник: Microchip Technology
Description: TVS DIODE 17VWM 27.6VC DO214AB
Description: TVS DIODE 17VWM 27.6VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| MXSMLJ14A |
![]() |
Виробник: Microchip Technology
Description: TVS DIODE 14VWM 23.2VC DO214AB
Description: TVS DIODE 14VWM 23.2VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| MXSMLJ170CAe3 |
![]() |
Виробник: Microchip Technology
Description: TVS DIODE 170VWM 275VC DO214AB
Description: TVS DIODE 170VWM 275VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| MXSMLJ170Ae3 |
![]() |
Виробник: Microchip Technology
Description: TVS DIODE 170VWM 275VC DO214AB
Description: TVS DIODE 170VWM 275VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| MXSMLG78Ae3 |
![]() |
Виробник: Microchip Technology
Description: TVS DIODE 78VWM 126VC SMLG
Description: TVS DIODE 78VWM 126VC SMLG
товару немає в наявності
В кошику
од. на суму грн.
| MXSMLJ110CAe3 |
![]() |
Виробник: Microchip Technology
Description: TVS DIODE 110VWM 177VC DO214AB
Description: TVS DIODE 110VWM 177VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| MXSMLJ15CAE3 |
![]() |
Виробник: Microchip Technology
Description: TVS DIODE 15VWM 24.4VC DO214AB
Description: TVS DIODE 15VWM 24.4VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| MIC68200-1.8YML TR |
![]() |
Виробник: Microchip Technology
Description: 2A SEQUENCING LDO
Description: 2A SEQUENCING LDO
товару немає в наявності
В кошику
од. на суму грн.
| MIC68200YML TR |
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Виробник: Microchip Technology
Description: 2AMP SEQUENCING LDO WITH TRACKIN
Description: 2AMP SEQUENCING LDO WITH TRACKIN
товару немає в наявності
В кошику
од. на суму грн.
| MIC68200-3.3YML TR |
![]() |
Виробник: Microchip Technology
Description: 2A SEQUENCING LDO
Description: 2A SEQUENCING LDO
товару немає в наявності
В кошику
од. на суму грн.
| DSC1223DI2-156M2500T |
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Виробник: Microchip Technology
Description: MEMS OSC SMD
Description: MEMS OSC SMD
товару немає в наявності
В кошику
од. на суму грн.
| DSC1223DA3-100M0000T |
Виробник: Microchip Technology
Description: OSC MEMS LVDS SMD
Description: OSC MEMS LVDS SMD
товару немає в наявності
В кошику
од. на суму грн.
| DSC1223NE2-100M0000 |
![]() |
Виробник: Microchip Technology
Description: MEMS OSC, LOW JITTER, 100MHZ, LV
Description: MEMS OSC, LOW JITTER, 100MHZ, LV
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В кошику
од. на суму грн.
| DSC1101CE1-100.0000T |
![]() |
Виробник: Microchip Technology
Description: MEMS OSC LOW JITTER 100MHZ LVCMO
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
Description: MEMS OSC LOW JITTER 100MHZ LVCMO
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
товару немає в наявності
В кошику
од. на суму грн.
| DSC1001CE1-100.0000T |
![]() |
Виробник: Microchip Technology
Description: MEMS OSC XO 100.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 10.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
Description: MEMS OSC XO 100.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 10.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
товару немає в наявності
В кошику
од. на суму грн.









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-3.20-mm-x-2.50-mm.jpg)