Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (338156) > Сторінка 1596 з 5636
| Фото | Назва | Виробник | Інформація |
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| JANSL2N2907AUBC | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UBC Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
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JANKCBL2N2907A | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
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| MASMCGLCE17Ae3 | Microchip Technology |
 Description: TVS DIODE 17VWM 27.6VC SMCGPackaging: Bulk Package / Case: DO-215AB, SMC Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 100pF @ 1MHz Current - Peak Pulse (10/1000µs): 54A Voltage - Reverse Standoff (Typ): 17V Supplier Device Package: SMCG (DO-215AB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 18.9V Voltage - Clamping (Max) @ Ipp: 27.6V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
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PIC18F56K42T-I/PT | Microchip Technology |
Description: IC MCU 8BIT 64KB FLASH 48TQFP Packaging: Cut Tape (CT) Package / Case: 48-TQFP Exposed Pad Mounting Type: Surface Mount Speed: 64MHz Program Memory Size: 64KB (32K x 16) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 1K x 8 Core Processor: PIC Data Converters: A/D 43x12b; D/A 1x5b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V Connectivity: I²C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT Supplier Device Package: 48-TQFP-EP (7x7) Part Status: Active Number of I/O: 44 |
на замовлення 1139 шт: термін постачання 21-31 дні (днів) |
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ATmega644pa-au | Microchip Technology |
Description: IC MCU 8BIT 64KB FLASH 44TQFP Packaging: Tray Package / Case: 44-TQFP Mounting Type: Surface Mount Speed: 20MHz Program Memory Size: 64KB (32K x 16) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: AVR Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 44-TQFP (10x10) Part Status: Active Number of I/O: 32 DigiKey Programmable: Verified |
на замовлення 4064 шт: термін постачання 21-31 дні (днів) |
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MSMBG8.5Ae3 | Microchip Technology |
Description: TVS DIODE 8.5VWM 14.4VC SMBG |
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MXSMLJ110CA | Microchip Technology |
Description: TVS DIODE 110VWM 177VC DO214AB |
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MXSMLJ17CA | Microchip Technology |
Description: TVS DIODE 17VWM 27.6VC DO214AB |
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MXSMLJ10A | Microchip Technology |
Description: TVS DIODE 10VWM 17VC DO214AB |
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| MXSMLG75Ae3 | Microchip Technology |
Description: TVS DIODE 75VWM 121VC SMLG |
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| MXSMLG7.0Ae3 | Microchip Technology |
Description: TVS DIODE 7VWM 12VC SMLG Packaging: Bulk Package / Case: DO-215AB, SMC Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 250A Voltage - Reverse Standoff (Typ): 7V Supplier Device Package: SMLG (DO-215AB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.78V Voltage - Clamping (Max) @ Ipp: 12V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Part Status: Active |
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| MXSMLG8.5CA | Microchip Technology |
Description: TVS DIODE 8.5VWM 14.4VC SMLG |
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MXSMLJ10Ae3 | Microchip Technology |
Description: TVS DIODE 10VWM 17VC DO214AB |
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MXSMLJ170CA | Microchip Technology |
Description: TVS DIODE 170VWM 275VC DO214AB |
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| MXSMLG7.0CA | Microchip Technology |
Description: TVS DIODE 7VWM 12VC SMLG |
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| MXSMLG90CA | Microchip Technology |
Description: TVS DIODE 90VWM 146VC SMLG |
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| MXSMLG70CA | Microchip Technology |
Description: TVS DIODE 70VWM 113VC SMLG |
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MXSMLJ120CA | Microchip Technology |
Description: TVS DIODE 120VWM 193VC DO214AB |
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MXSMLJ10CA | Microchip Technology |
Description: TVS DIODE 10VWM 17VC DO214AB |
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MXSMLJ130CA | Microchip Technology |
Description: TVS DIODE 130VWM 209VC DO214AB |
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MXSMLJ100Ae3 | Microchip Technology |
Description: TVS DIODE 100VWM 162VC DO214AB |
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MXSMLJ17A | Microchip Technology |
Description: TVS DIODE 17VWM 27.6VC DO214AB |
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MXSMLJ14A | Microchip Technology |
Description: TVS DIODE 14VWM 23.2VC DO214AB |
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MXSMLJ170CAe3 | Microchip Technology |
Description: TVS DIODE 170VWM 275VC DO214AB |
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MXSMLJ170Ae3 | Microchip Technology |
Description: TVS DIODE 170VWM 275VC DO214AB |
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| MXSMLG78Ae3 | Microchip Technology |
Description: TVS DIODE 78VWM 126VC SMLG |
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MXSMLJ110CAe3 | Microchip Technology |
Description: TVS DIODE 110VWM 177VC DO214AB |
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MXSMLJ15CAE3 | Microchip Technology |
Description: TVS DIODE 15VWM 24.4VC DO214AB |
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| MIC68200-1.8YML TR | Microchip Technology |
Description: 2A SEQUENCING LDO |
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MIC68200YML TR | Microchip Technology |
Description: 2AMP SEQUENCING LDO WITH TRACKIN |
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| MIC68200-3.3YML TR | Microchip Technology |
Description: 2A SEQUENCING LDO |
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| DSC1223DI2-156M2500T | Microchip Technology |
Description: MEMS OSC SMD |
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| DSC1224DL1-100M0000T | Microchip Technology | Description: OSC MEMS LOW PWR SMD |
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| DSC1223DA3-100M0000T | Microchip Technology | Description: OSC MEMS LVDS SMD |
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DSC1223NE2-100M0000 | Microchip Technology |
Description: MEMS OSC, LOW JITTER, 100MHZ, LV |
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-3.20-mm-x-2.50-mm.jpg "DSC1101CE1-100.0000T") |
DSC1101CE1-100.0000T | Microchip Technology |
Description: MEMS OSC LOW JITTER 100MHZ LVCMO Packaging: Tape & Reel (TR) Package / Case: 6-VDFN Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Output: CMOS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: -20°C ~ 70°C Frequency Stability: ±50ppm Voltage - Supply: 2.25V ~ 3.6V Current - Supply (Max): 35mA Height - Seated (Max): 0.035" (0.90mm) Frequency: 100 MHz Base Resonator: MEMS |
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| DSC1001CE1-100.0000T | Microchip Technology |
Description: MEMS OSC XO 100.0000MHZ CMOS SMD Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Output: CMOS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: -20°C ~ 70°C Frequency Stability: ±50ppm Voltage - Supply: 1.8V ~ 3.3V Ratings: AEC-Q100 Current - Supply (Max): 10.5mA Height - Seated (Max): 0.035" (0.90mm) Frequency: 100 MHz Base Resonator: MEMS |
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DSC1101CE1-100.0000 | Microchip Technology |
Description: MEMS OSC LOW JITTER 100MHZ LVCMO Packaging: Tube Package / Case: 6-VDFN Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Output: CMOS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: -20°C ~ 70°C Frequency Stability: ±50ppm Voltage - Supply: 2.25V ~ 3.6V Current - Supply (Max): 35mA Height - Seated (Max): 0.035" (0.90mm) Frequency: 100 MHz Base Resonator: MEMS |
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| DSC1103CE1-100.0000 | Microchip Technology |
Description: MEMS OSC LOW JITTER 100MHZ LVDS Packaging: Tube Package / Case: 6-VDFN Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Output: LVDS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: -20°C ~ 70°C Frequency Stability: ±50ppm Voltage - Supply: 2.25V ~ 3.63V Current - Supply (Max): 32mA Height - Seated (Max): 0.035" (0.90mm) Frequency: 100 MHz Base Resonator: MEMS |
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| DSC1001CE1-100.0000 | Microchip Technology |
Description: MEMS OSC XO 100.0000MHZ CMOS SMD Packaging: Tube Package / Case: 4-SMD, No Lead Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Output: CMOS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: -20°C ~ 70°C Frequency Stability: ±50ppm Voltage - Supply: 1.8V ~ 3.3V Ratings: AEC-Q100 Current - Supply (Max): 10.5mA Height - Seated (Max): 0.035" (0.90mm) Frequency: 100 MHz Base Resonator: MEMS |
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| DSC1103CE1-100.0000T | Microchip Technology |
Description: MEMS OSC LOW JITTER 100MHZ LVDS Packaging: Tape & Reel (TR) Package / Case: 6-VDFN Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Output: LVDS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: -20°C ~ 70°C Frequency Stability: ±50ppm Voltage - Supply: 2.25V ~ 3.63V Current - Supply (Max): 32mA Height - Seated (Max): 0.035" (0.90mm) Frequency: 100 MHz Base Resonator: MEMS |
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| MASMCGLCE110Ae3 | Microchip Technology |
Description: TVS DIODE 110VWM 178VC SMCG |
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MSMCJLCE110AE3/TR | Microchip Technology |
Description: TVS DIODE 110VWM 178VC SMCJ |
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| MXSMCGLCE110A | Microchip Technology |
Description: TVS DIODE 110VWM 178VC SMCG |
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| JAN1N2814B | Microchip Technology | Description: ZENER DIODE |
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| JANTXV1N2814B | Microchip Technology | Description: ZENER DIODE |
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| JANTX1N2814RB | Microchip Technology | Description: ZENER DIODE |
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| JAN1N2814RB | Microchip Technology | Description: ZENER DIODE |
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| JANTX1N2814B | Microchip Technology | Description: ZENER DIODE |
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| JANTXV1N2814RB | Microchip Technology | Description: ZENER DIODE |
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| 2N4003 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-211MB, TO-63-4, Stud Mounting Type: Stud Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Supplier Device Package: TO-63 Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 100 W |
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24FC16T-E/OT36KVAO | Microchip Technology |
Description: 16KB I2C EEPROM, 1MHZ 1.7-5.5V, |
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LP0701LG-G | Microchip Technology |
Description: MOSFET P-CH 16.5V 700MA 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 700mA (Tj) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 300mA, 5V Power Dissipation (Max): 1.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 1.1mA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 2V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 16.5 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 15 V |
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MSMLJ8.5CA | Microchip Technology |
Description: TVS DIODE 8.5VWM 14.4VC DO214AB |
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MSMLJ8.5Ae3 | Microchip Technology |
Description: TVS DIODE 8.5VWM 14.4VC DO214AB |
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MSMLJ90A | Microchip Technology |
Description: TVS DIODE 90VWM 146VC DO214AB |
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MSMLJ8.0CA | Microchip Technology |
Description: TVS DIODE 8VWM 13.6VC DO214AB |
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MSMLJ90Ae3 | Microchip Technology |
Description: TVS DIODE 90VWM 146VC DO214AB |
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MSMLJ75CA | Microchip Technology |
Description: TVS DIODE 75VWM 121VC DO214AB |
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MSMLJ8.5A | Microchip Technology |
Description: TVS DIODE 8.5VWM 14.4VC DO214AB |
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| JANSL2N2907AUBC |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
товар відсутній
| JANKCBL2N2907A |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
товар відсутній
| MASMCGLCE17Ae3 |
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Виробник: Microchip Technology
Description: TVS DIODE 17VWM 27.6VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 54A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: SMCG (DO-215AB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 17VWM 27.6VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 54A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: SMCG (DO-215AB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
товар відсутній
| PIC18F56K42T-I/PT |
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Виробник: Microchip Technology
Description: IC MCU 8BIT 64KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 64KB (32K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: PIC
Data Converters: A/D 43x12b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: I²C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP-EP (7x7)
Part Status: Active
Number of I/O: 44
Description: IC MCU 8BIT 64KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 64KB (32K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: PIC
Data Converters: A/D 43x12b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: I²C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP-EP (7x7)
Part Status: Active
Number of I/O: 44
на замовлення 1139 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 198.84 грн |
| 25+ | 176.9 грн |
| 100+ | 160.28 грн |
| ATmega644pa-au |
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Виробник: Microchip Technology
Description: IC MCU 8BIT 64KB FLASH 44TQFP
Packaging: Tray
Package / Case: 44-TQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 64KB (32K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Part Status: Active
Number of I/O: 32
DigiKey Programmable: Verified
Description: IC MCU 8BIT 64KB FLASH 44TQFP
Packaging: Tray
Package / Case: 44-TQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 64KB (32K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Part Status: Active
Number of I/O: 32
DigiKey Programmable: Verified
на замовлення 4064 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 424.06 грн |
| 25+ | 374.53 грн |
| 100+ | 339.68 грн |
| MXSMLJ110CA |
|
Виробник: Microchip Technology
Description: TVS DIODE 110VWM 177VC DO214AB
Description: TVS DIODE 110VWM 177VC DO214AB
товар відсутній
| MXSMLJ17CA |
|
Виробник: Microchip Technology
Description: TVS DIODE 17VWM 27.6VC DO214AB
Description: TVS DIODE 17VWM 27.6VC DO214AB
товар відсутній
| MXSMLG7.0Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 7VWM 12VC SMLG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 250A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: SMLG (DO-215AB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 7VWM 12VC SMLG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 250A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: SMLG (DO-215AB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
товар відсутній
| MXSMLJ170CA |
|
Виробник: Microchip Technology
Description: TVS DIODE 170VWM 275VC DO214AB
Description: TVS DIODE 170VWM 275VC DO214AB
товар відсутній
| MXSMLJ120CA |
|
Виробник: Microchip Technology
Description: TVS DIODE 120VWM 193VC DO214AB
Description: TVS DIODE 120VWM 193VC DO214AB
товар відсутній
| MXSMLJ130CA |
|
Виробник: Microchip Technology
Description: TVS DIODE 130VWM 209VC DO214AB
Description: TVS DIODE 130VWM 209VC DO214AB
товар відсутній
| MXSMLJ100Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 100VWM 162VC DO214AB
Description: TVS DIODE 100VWM 162VC DO214AB
товар відсутній
| MXSMLJ170CAe3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 170VWM 275VC DO214AB
Description: TVS DIODE 170VWM 275VC DO214AB
товар відсутній
| MXSMLJ170Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 170VWM 275VC DO214AB
Description: TVS DIODE 170VWM 275VC DO214AB
товар відсутній
| MXSMLJ110CAe3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 110VWM 177VC DO214AB
Description: TVS DIODE 110VWM 177VC DO214AB
товар відсутній
| MXSMLJ15CAE3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 15VWM 24.4VC DO214AB
Description: TVS DIODE 15VWM 24.4VC DO214AB
товар відсутній
| MIC68200YML TR |
|
Виробник: Microchip Technology
Description: 2AMP SEQUENCING LDO WITH TRACKIN
Description: 2AMP SEQUENCING LDO WITH TRACKIN
товар відсутній
| DSC1224DL1-100M0000T |
Виробник: Microchip Technology
Description: OSC MEMS LOW PWR SMD
Description: OSC MEMS LOW PWR SMD
товар відсутній
| DSC1223NE2-100M0000 |
|
Виробник: Microchip Technology
Description: MEMS OSC, LOW JITTER, 100MHZ, LV
Description: MEMS OSC, LOW JITTER, 100MHZ, LV
товар відсутній
| DSC1101CE1-100.0000T |
|
Виробник: Microchip Technology
Description: MEMS OSC LOW JITTER 100MHZ LVCMO
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
Description: MEMS OSC LOW JITTER 100MHZ LVCMO
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
товар відсутній
| DSC1001CE1-100.0000T |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 100.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 10.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
Description: MEMS OSC XO 100.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 10.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
товар відсутній
| DSC1101CE1-100.0000 |
|
Виробник: Microchip Technology
Description: MEMS OSC LOW JITTER 100MHZ LVCMO
Packaging: Tube
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
Description: MEMS OSC LOW JITTER 100MHZ LVCMO
Packaging: Tube
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
товар відсутній
| DSC1103CE1-100.0000 |
|
Виробник: Microchip Technology
Description: MEMS OSC LOW JITTER 100MHZ LVDS
Packaging: Tube
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
Description: MEMS OSC LOW JITTER 100MHZ LVDS
Packaging: Tube
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
товар відсутній
| DSC1001CE1-100.0000 |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 100.0000MHZ CMOS SMD
Packaging: Tube
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 10.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
Description: MEMS OSC XO 100.0000MHZ CMOS SMD
Packaging: Tube
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 10.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
товар відсутній
| DSC1103CE1-100.0000T |
|
Виробник: Microchip Technology
Description: MEMS OSC LOW JITTER 100MHZ LVDS
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
Description: MEMS OSC LOW JITTER 100MHZ LVDS
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
товар відсутній
| MASMCGLCE110Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 110VWM 178VC SMCG
Description: TVS DIODE 110VWM 178VC SMCG
товар відсутній
| MSMCJLCE110AE3/TR |
|
Виробник: Microchip Technology
Description: TVS DIODE 110VWM 178VC SMCJ
Description: TVS DIODE 110VWM 178VC SMCJ
товар відсутній
| MXSMCGLCE110A |
|
Виробник: Microchip Technology
Description: TVS DIODE 110VWM 178VC SMCG
Description: TVS DIODE 110VWM 178VC SMCG
товар відсутній
| 2N4003 |
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MB, TO-63-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-63
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 100 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MB, TO-63-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-63
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 100 W
товар відсутній
| 24FC16T-E/OT36KVAO |
|
Виробник: Microchip Technology
Description: 16KB I2C EEPROM, 1MHZ 1.7-5.5V,
Description: 16KB I2C EEPROM, 1MHZ 1.7-5.5V,
товар відсутній
| LP0701LG-G |
|
Виробник: Microchip Technology
Description: MOSFET P-CH 16.5V 700MA 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 300mA, 5V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 1.1mA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 16.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 15 V
Description: MOSFET P-CH 16.5V 700MA 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 300mA, 5V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 1.1mA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 16.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 15 V
товар відсутній
| MSMLJ8.5CA |
|
Виробник: Microchip Technology
Description: TVS DIODE 8.5VWM 14.4VC DO214AB
Description: TVS DIODE 8.5VWM 14.4VC DO214AB
товар відсутній
| MSMLJ8.5Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 8.5VWM 14.4VC DO214AB
Description: TVS DIODE 8.5VWM 14.4VC DO214AB
товар відсутній
| MSMLJ8.5A |
|
Виробник: Microchip Technology
Description: TVS DIODE 8.5VWM 14.4VC DO214AB
Description: TVS DIODE 8.5VWM 14.4VC DO214AB
товар відсутній