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MIC4423BWM MIC4423BWM Microchip Technology MIC4423-4-5-Dual-3A-Peak-Low-Side-MOSFET-Drivers-DS20006638A.pdf Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 28ns, 32ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 3A, 3A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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DT890501A/TR Microchip Technology Description: TEMPERATURE COMPENSATED
Packaging: Bulk
Part Status: Active
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JANTX1N5623 JANTX1N5623 Microchip Technology 10968-sa7-47-datasheet Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 1000 V
Qualification: MIL-PRF-19500/429
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MASMLJ7.0CAe3 MASMLJ7.0CAe3 Microchip Technology 10563-msml-datasheet Description: TVS DIODE 7VWM 12VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 250A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-214AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
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MASMLJ6.5CAe3 MASMLJ6.5CAe3 Microchip Technology 10563-msml-datasheet Description: TVS DIODE 6.5VWM 11.2VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 267.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: DO-214AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
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MASMLJ64CAe3 MASMLJ64CAe3 Microchip Technology 10563-msml-datasheet Description: TVS DIODE 64VWM 103VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 29.2A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-214AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
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MASMLJ8.0CAe3 MASMLJ8.0CAe3 Microchip Technology 10563-msml-datasheet Description: TVS DIODE 8VWM 13.6VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 220.6A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: DO-214AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.89V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
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MLCE130Ae3 Microchip Technology 9498-mlce-pdf Description: TVS DIODE 130VWM 209VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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1N4753AUR/TR 1N4753AUR/TR Microchip Technology 1N4728UR-1N4764AUR.pdf Description: DIODE ZENER 36V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 27.4 V
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1N4753AUR/TR 1N4753AUR/TR Microchip Technology 1N4728UR-1N4764AUR.pdf Description: DIODE ZENER 36V 1W DO213AB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 27.4 V
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DSC6101HA2B-072.5000T DSC6101HA2B-072.5000T Microchip Technology DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155A.pdf Description: MEMS OSC ULP LVCMOS -40C-125C 25
Packaging: Tape & Reel (TR)
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Active
Frequency: 72.5 MHz
Base Resonator: MEMS
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DSC6331HL1AB-072.5000T Microchip Technology DSC63xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-with-Spread-Spectrum-DS20006154A.pdf Description: MEMS OSC SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.71V ~ 3.63V
Spread Spectrum Bandwidth: ±0.25%, Center Spread
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Active
Frequency: 72.5 MHz
Base Resonator: MEMS
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DSC6101HA2B-072.5000 DSC6101HA2B-072.5000 Microchip Technology DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155A.pdf Description: MEMS OSC ULP LVCMOS -40C-125C 25
Packaging: Bag
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Active
Frequency: 72.5 MHz
Base Resonator: MEMS
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DSC6101HL2B-072.5000 DSC6101HL2B-072.5000 Microchip Technology DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155A.pdf Description: MEMS OSC ULP LVCMOS -40C-105C 25
Packaging: Bag
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Active
Frequency: 72.5 MHz
Base Resonator: MEMS
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DSC6102HL2B-072.5000T Microchip Technology DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155A.pdf Description: MEMS OSC ULP LVCMOS -40C-105C 25
Packaging: Tape & Reel (TR)
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Active
Frequency: 72.5 MHz
Base Resonator: MEMS
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DSC6102HL2B-072.5000 Microchip Technology DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155A.pdf Description: MEMS OSC ULP LVCMOS -40C-105C 25
Packaging: Bag
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Active
Frequency: 72.5 MHz
Base Resonator: MEMS
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DSC6331HL1AB-072.5000 Microchip Technology DSC63xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-with-Spread-Spectrum-DS20006154A.pdf Description: MEMS OSC SMD
Packaging: Bag
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.71V ~ 3.63V
Spread Spectrum Bandwidth: ±0.25%, Center Spread
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Active
Frequency: 72.5 MHz
Base Resonator: MEMS
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DSC6101HL2B-072.5000T DSC6101HL2B-072.5000T Microchip Technology DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155A.pdf Description: MEMS OSC ULP LVCMOS -40C-105C 25
Packaging: Tape & Reel (TR)
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Active
Frequency: 72.5 MHz
Base Resonator: MEMS
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ATSAM4SD32CA-CFUR ATSAM4SD32CA-CFUR Microchip Technology Atmel-11100-32-bit%20Cortex-M4-Microcontroller-SAM4S_Datasheet.pdf Description: IC MCU 32BIT 2MB FLASH 100VFBGA
Packaging: Cut Tape (CT)
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 160K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: EBI/EMI, I2C, IrDA, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 100-VFBGA (7x7)
Part Status: Active
Number of I/O: 79
DigiKey Programmable: Not Verified
на замовлення 7509 шт:
термін постачання 21-31 дні (днів)
1+963.73 грн
25+843.37 грн
100+762.88 грн
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1N4733AURE3/TR 1N4733AURE3/TR Microchip Technology 1N4728UR-1N4764AUR.pdf Description: DIODE ZENER 5.1V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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1N4733AURE3/TR 1N4733AURE3/TR Microchip Technology 1N4728UR-1N4764AUR.pdf Description: DIODE ZENER 5.1V 1W DO213AB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
на замовлення 162 шт:
термін постачання 21-31 дні (днів)
2+274.55 грн
Мінімальне замовлення: 2
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MPFS-ICICLE-KIT-ES-FP5 Microchip Technology Description: DEVELOPMENT KIT
Packaging: Bulk
For Use With/Related Products: MPFS250
Type: FPGA + MCU/MPU SoC
Contents: Board(s), Cable(s), Power Supply
Platform: PolarFire SoC FPGA SiFive RISC-V Icicle
Part Status: Obsolete
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MIC6315-46D4UY TR MIC6315-46D4UY TR Microchip Technology MCRL-S-A0000040620-1.pdf?t.download=true&u=5oefqw Description: OPEN-DRAIN MICROPROCESSOR RESET
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Power Supply Monitor
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 1.1s Minimum
Voltage - Threshold: 4.63V
Supplier Device Package: SOT-143
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1615 шт:
термін постачання 21-31 дні (днів)
1615+17.41 грн
Мінімальне замовлення: 1615
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1N4578AUR-1/TR Microchip Technology 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf Description: TEMPERATURE COMPENSATED
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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1N4578AUR-1/TR Microchip Technology 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf Description: TEMPERATURE COMPENSATED
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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1N4576AUR-1/TR 1N4576AUR-1/TR Microchip Technology 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf Description: TEMPERATURE COMPENSATED
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 110 шт:
термін постачання 21-31 дні (днів)
110+576.67 грн
Мінімальне замовлення: 110
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1N4576AUR-1/TR 1N4576AUR-1/TR Microchip Technology 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf Description: TEMPERATURE COMPENSATED
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 110 шт:
термін постачання 21-31 дні (днів)
1+620.73 грн
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1N4577AUR-1/TR 1N4577AUR-1/TR Microchip Technology 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf Description: TEMPERATURE COMPENSATED
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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1N4577AUR-1/TR 1N4577AUR-1/TR Microchip Technology 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf Description: TEMPERATURE COMPENSATED
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 88 шт:
термін постачання 21-31 дні (днів)
1+753.63 грн
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1N4571AUR-1/TR 1N4571AUR-1/TR Microchip Technology 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf Description: TEMPERATURE COMPENSATED
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 147 шт:
термін постачання 21-31 дні (днів)
147+434.20 грн
Мінімальне замовлення: 147
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1N4571AUR-1/TR 1N4571AUR-1/TR Microchip Technology 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf Description: TEMPERATURE COMPENSATED
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 147 шт:
термін постачання 21-31 дні (днів)
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1N4579AUR-1/TR Microchip Technology 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf Description: TEMPERATURE COMPENSATED
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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1N4579AUR-1/TR Microchip Technology 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf Description: TEMPERATURE COMPENSATED
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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1N4570AUR-1/TR 1N4570AUR-1/TR Microchip Technology 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf Description: TEMPERATURE COMPENSATED
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 160 шт:
термін постачання 21-31 дні (днів)
160+399.35 грн
Мінімальне замовлення: 160
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1N4570AUR-1/TR 1N4570AUR-1/TR Microchip Technology 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf Description: TEMPERATURE COMPENSATED
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 160 шт:
термін постачання 21-31 дні (днів)
1+429.74 грн
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1N457AUR-1/TR 1N457AUR-1/TR Microchip Technology Description: SIGNAL OR COMPUTER DIODE
Packaging: Tape & Reel (TR)
Part Status: Active
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1N457AUR-1/TR 1N457AUR-1/TR Microchip Technology Description: SIGNAL OR COMPUTER DIODE
Packaging: Cut Tape (CT)
Part Status: Active
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1N4582AUR-1/TR 1N4582AUR-1/TR Microchip Technology 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf Description: DIODE ZENER 500MW DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
105+582.84 грн
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1N4582AUR-1/TR 1N4582AUR-1/TR Microchip Technology 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf Description: DIODE ZENER 500MW DO213AA
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
1+627.89 грн
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1N4580AUR-1/TR 1N4580AUR-1/TR Microchip Technology 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf Description: DIODE ZENER 500MW DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 175 шт:
термін постачання 21-31 дні (днів)
175+355.28 грн
Мінімальне замовлення: 175
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1N4580AUR-1/TR 1N4580AUR-1/TR Microchip Technology 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf Description: DIODE ZENER 500MW DO213AA
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 175 шт:
термін постачання 21-31 дні (днів)
1+382.78 грн
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1N4581AUR-1/TR 1N4581AUR-1/TR Microchip Technology 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf Description: DIODE ZENER 500MW DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 108 шт:
термін постачання 21-31 дні (днів)
108+568.89 грн
Мінімальне замовлення: 108
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1N4581AUR-1/TR 1N4581AUR-1/TR Microchip Technology 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf Description: DIODE ZENER 500MW DO213AA
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 108 шт:
термін постачання 21-31 дні (днів)
1+611.98 грн
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JANTXV1N4583AUR-1/TR JANTXV1N4583AUR-1/TR Microchip Technology Description: DIODE ZENER TEMP COMPENSATED
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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JANHCA1N4580A JANHCA1N4580A Microchip Technology 14809-military-qualified-die-chip Description: DIODE ZENER TEMP COMPENSATED
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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JAN1N5615 JAN1N5615 Microchip Technology 11061-sd46a-datasheet Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Grade: Military
Qualification: MIL-PRF-19500/429
на замовлення 139 шт:
термін постачання 21-31 дні (днів)
2+307.18 грн
100+274.56 грн
Мінімальне замовлення: 2
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JANTX1N5615/TR JANTX1N5615/TR Microchip Technology Description: DIODE GEN PURP 200V 1A A-PAK
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Grade: Military
Qualification: MIL-PRF-19500/429
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JAN1N5615/TR JAN1N5615/TR Microchip Technology Description: DIODE GEN PURP 200V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Grade: Military
Qualification: MIL-PRF-19500/429
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JANTXV1N5615/TR JANTXV1N5615/TR Microchip Technology Description: DIODE GEN PURP 200V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Grade: Military
Qualification: MIL-PRF-19500/429
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JAN1N5615US/TR JAN1N5615US/TR Microchip Technology Description: DIODE GEN PURP 200V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Grade: Military
Qualification: MIL-PRF-19500/429
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JANS1N5615/TR JANS1N5615/TR Microchip Technology Description: DIODE GEN PURP 200V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Grade: Military
Qualification: MIL-PRF-19500/429
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JANTXV1N5615US/TR JANTXV1N5615US/TR Microchip Technology Description: DIODE GEN PURP 200V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Qualification: MIL-PRF-19500/429
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1N5615E3 1N5615E3 Microchip Technology Description: DIODE GEN PURP 200V 1A A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
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1N5615/TR 1N5615/TR Microchip Technology 10968-sa7-47-datasheet Description: DIODE GEN PURP 200V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
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1N5615E3/TR 1N5615E3/TR Microchip Technology Description: DIODE GEN PURP 200V 1A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
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JANTX1N5615US/TR JANTX1N5615US/TR Microchip Technology Description: DIODE GEN PURP 200V 1A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Grade: Military
Qualification: MIL-PRF-19500/429
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JANS1N5615US/TR JANS1N5615US/TR Microchip Technology Description: DIODE GEN PURP 200V 1A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Grade: Military
Qualification: MIL-PRF-19500/429
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JANTX1N5615US JANTX1N5615US Microchip Technology 150_1N5615US%20thru%201N5623US.pdf Description: DIODE GEN PURP 200V 1A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Grade: Military
Qualification: MIL-PRF-19500/429
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JANTX1N4944/TR JANTX1N4944/TR Microchip Technology 129281-lds-0295-datasheet Description: DIODE GEN PURP 400V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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JAN1N4944/TR JAN1N4944/TR Microchip Technology 129281-lds-0295-datasheet Description: DIODE GEN PURP 400V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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MIC4423BWM MIC4423-4-5-Dual-3A-Peak-Low-Side-MOSFET-Drivers-DS20006638A.pdf
MIC4423BWM
Виробник: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 28ns, 32ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 3A, 3A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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DT890501A/TR
Виробник: Microchip Technology
Description: TEMPERATURE COMPENSATED
Packaging: Bulk
Part Status: Active
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JANTX1N5623 10968-sa7-47-datasheet
JANTX1N5623
Виробник: Microchip Technology
Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 1000 V
Qualification: MIL-PRF-19500/429
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MASMLJ7.0CAe3 10563-msml-datasheet
MASMLJ7.0CAe3
Виробник: Microchip Technology
Description: TVS DIODE 7VWM 12VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 250A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-214AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
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MASMLJ6.5CAe3 10563-msml-datasheet
MASMLJ6.5CAe3
Виробник: Microchip Technology
Description: TVS DIODE 6.5VWM 11.2VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 267.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: DO-214AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
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MASMLJ64CAe3 10563-msml-datasheet
MASMLJ64CAe3
Виробник: Microchip Technology
Description: TVS DIODE 64VWM 103VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 29.2A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-214AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
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MASMLJ8.0CAe3 10563-msml-datasheet
MASMLJ8.0CAe3
Виробник: Microchip Technology
Description: TVS DIODE 8VWM 13.6VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 220.6A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: DO-214AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.89V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
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MLCE130Ae3 9498-mlce-pdf
Виробник: Microchip Technology
Description: TVS DIODE 130VWM 209VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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1N4753AUR/TR 1N4728UR-1N4764AUR.pdf
1N4753AUR/TR
Виробник: Microchip Technology
Description: DIODE ZENER 36V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 27.4 V
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1N4753AUR/TR 1N4728UR-1N4764AUR.pdf
1N4753AUR/TR
Виробник: Microchip Technology
Description: DIODE ZENER 36V 1W DO213AB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 27.4 V
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DSC6101HA2B-072.5000T DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155A.pdf
DSC6101HA2B-072.5000T
Виробник: Microchip Technology
Description: MEMS OSC ULP LVCMOS -40C-125C 25
Packaging: Tape & Reel (TR)
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Active
Frequency: 72.5 MHz
Base Resonator: MEMS
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DSC6331HL1AB-072.5000T DSC63xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-with-Spread-Spectrum-DS20006154A.pdf
Виробник: Microchip Technology
Description: MEMS OSC SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.71V ~ 3.63V
Spread Spectrum Bandwidth: ±0.25%, Center Spread
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Active
Frequency: 72.5 MHz
Base Resonator: MEMS
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DSC6101HA2B-072.5000 DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155A.pdf
DSC6101HA2B-072.5000
Виробник: Microchip Technology
Description: MEMS OSC ULP LVCMOS -40C-125C 25
Packaging: Bag
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Active
Frequency: 72.5 MHz
Base Resonator: MEMS
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DSC6101HL2B-072.5000 DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155A.pdf
DSC6101HL2B-072.5000
Виробник: Microchip Technology
Description: MEMS OSC ULP LVCMOS -40C-105C 25
Packaging: Bag
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Active
Frequency: 72.5 MHz
Base Resonator: MEMS
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DSC6102HL2B-072.5000T DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155A.pdf
Виробник: Microchip Technology
Description: MEMS OSC ULP LVCMOS -40C-105C 25
Packaging: Tape & Reel (TR)
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Active
Frequency: 72.5 MHz
Base Resonator: MEMS
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DSC6102HL2B-072.5000 DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155A.pdf
Виробник: Microchip Technology
Description: MEMS OSC ULP LVCMOS -40C-105C 25
Packaging: Bag
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Active
Frequency: 72.5 MHz
Base Resonator: MEMS
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DSC6331HL1AB-072.5000 DSC63xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-with-Spread-Spectrum-DS20006154A.pdf
Виробник: Microchip Technology
Description: MEMS OSC SMD
Packaging: Bag
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.71V ~ 3.63V
Spread Spectrum Bandwidth: ±0.25%, Center Spread
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Active
Frequency: 72.5 MHz
Base Resonator: MEMS
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DSC6101HL2B-072.5000T DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155A.pdf
DSC6101HL2B-072.5000T
Виробник: Microchip Technology
Description: MEMS OSC ULP LVCMOS -40C-105C 25
Packaging: Tape & Reel (TR)
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Active
Frequency: 72.5 MHz
Base Resonator: MEMS
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ATSAM4SD32CA-CFUR Atmel-11100-32-bit%20Cortex-M4-Microcontroller-SAM4S_Datasheet.pdf
ATSAM4SD32CA-CFUR
Виробник: Microchip Technology
Description: IC MCU 32BIT 2MB FLASH 100VFBGA
Packaging: Cut Tape (CT)
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 160K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: EBI/EMI, I2C, IrDA, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 100-VFBGA (7x7)
Part Status: Active
Number of I/O: 79
DigiKey Programmable: Not Verified
на замовлення 7509 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+963.73 грн
25+843.37 грн
100+762.88 грн
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1N4733AURE3/TR 1N4728UR-1N4764AUR.pdf
1N4733AURE3/TR
Виробник: Microchip Technology
Description: DIODE ZENER 5.1V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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1N4733AURE3/TR 1N4728UR-1N4764AUR.pdf
1N4733AURE3/TR
Виробник: Microchip Technology
Description: DIODE ZENER 5.1V 1W DO213AB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
на замовлення 162 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+274.55 грн
Мінімальне замовлення: 2
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MPFS-ICICLE-KIT-ES-FP5
Виробник: Microchip Technology
Description: DEVELOPMENT KIT
Packaging: Bulk
For Use With/Related Products: MPFS250
Type: FPGA + MCU/MPU SoC
Contents: Board(s), Cable(s), Power Supply
Platform: PolarFire SoC FPGA SiFive RISC-V Icicle
Part Status: Obsolete
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MIC6315-46D4UY TR MCRL-S-A0000040620-1.pdf?t.download=true&u=5oefqw
MIC6315-46D4UY TR
Виробник: Microchip Technology
Description: OPEN-DRAIN MICROPROCESSOR RESET
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Power Supply Monitor
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 1.1s Minimum
Voltage - Threshold: 4.63V
Supplier Device Package: SOT-143
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1615 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1615+17.41 грн
Мінімальне замовлення: 1615
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1N4578AUR-1/TR 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf
Виробник: Microchip Technology
Description: TEMPERATURE COMPENSATED
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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1N4578AUR-1/TR 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf
Виробник: Microchip Technology
Description: TEMPERATURE COMPENSATED
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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1N4576AUR-1/TR 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf
1N4576AUR-1/TR
Виробник: Microchip Technology
Description: TEMPERATURE COMPENSATED
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 110 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
110+576.67 грн
Мінімальне замовлення: 110
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1N4576AUR-1/TR 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf
1N4576AUR-1/TR
Виробник: Microchip Technology
Description: TEMPERATURE COMPENSATED
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 110 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+620.73 грн
В кошику  од. на суму  грн.
1N4577AUR-1/TR 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf
1N4577AUR-1/TR
Виробник: Microchip Technology
Description: TEMPERATURE COMPENSATED
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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1N4577AUR-1/TR 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf
1N4577AUR-1/TR
Виробник: Microchip Technology
Description: TEMPERATURE COMPENSATED
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 88 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+753.63 грн
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1N4571AUR-1/TR 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf
1N4571AUR-1/TR
Виробник: Microchip Technology
Description: TEMPERATURE COMPENSATED
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 147 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
147+434.20 грн
Мінімальне замовлення: 147
В кошику  од. на суму  грн.
1N4571AUR-1/TR 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf
1N4571AUR-1/TR
Виробник: Microchip Technology
Description: TEMPERATURE COMPENSATED
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 147 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+467.94 грн
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1N4579AUR-1/TR 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf
Виробник: Microchip Technology
Description: TEMPERATURE COMPENSATED
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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1N4579AUR-1/TR 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf
Виробник: Microchip Technology
Description: TEMPERATURE COMPENSATED
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
товару немає в наявності
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1N4570AUR-1/TR 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf
1N4570AUR-1/TR
Виробник: Microchip Technology
Description: TEMPERATURE COMPENSATED
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 160 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
160+399.35 грн
Мінімальне замовлення: 160
В кошику  од. на суму  грн.
1N4570AUR-1/TR 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf
1N4570AUR-1/TR
Виробник: Microchip Technology
Description: TEMPERATURE COMPENSATED
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 160 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+429.74 грн
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1N457AUR-1/TR
1N457AUR-1/TR
Виробник: Microchip Technology
Description: SIGNAL OR COMPUTER DIODE
Packaging: Tape & Reel (TR)
Part Status: Active
товару немає в наявності
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1N457AUR-1/TR
1N457AUR-1/TR
Виробник: Microchip Technology
Description: SIGNAL OR COMPUTER DIODE
Packaging: Cut Tape (CT)
Part Status: Active
товару немає в наявності
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1N4582AUR-1/TR 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf
1N4582AUR-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 500MW DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
105+582.84 грн
Мінімальне замовлення: 105
В кошику  од. на суму  грн.
1N4582AUR-1/TR 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf
1N4582AUR-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 500MW DO213AA
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+627.89 грн
В кошику  од. на суму  грн.
1N4580AUR-1/TR 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf
1N4580AUR-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 500MW DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 175 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
175+355.28 грн
Мінімальне замовлення: 175
В кошику  од. на суму  грн.
1N4580AUR-1/TR 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf
1N4580AUR-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 500MW DO213AA
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 175 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+382.78 грн
В кошику  од. на суму  грн.
1N4581AUR-1/TR 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf
1N4581AUR-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 500MW DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 108 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
108+568.89 грн
Мінімальне замовлення: 108
В кошику  од. на суму  грн.
1N4581AUR-1/TR 1N4565AUR-1-1N4584AYR-1_CDLL4565-CDLL4584A.pdf
1N4581AUR-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 500MW DO213AA
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 108 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+611.98 грн
В кошику  од. на суму  грн.
JANTXV1N4583AUR-1/TR
JANTXV1N4583AUR-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
товару немає в наявності
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JANHCA1N4580A 14809-military-qualified-die-chip
JANHCA1N4580A
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
товару немає в наявності
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JAN1N5615 11061-sd46a-datasheet
JAN1N5615
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Grade: Military
Qualification: MIL-PRF-19500/429
на замовлення 139 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+307.18 грн
100+274.56 грн
Мінімальне замовлення: 2
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JANTX1N5615/TR
JANTX1N5615/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A A-PAK
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Grade: Military
Qualification: MIL-PRF-19500/429
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JAN1N5615/TR
JAN1N5615/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Grade: Military
Qualification: MIL-PRF-19500/429
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JANTXV1N5615/TR
JANTXV1N5615/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Grade: Military
Qualification: MIL-PRF-19500/429
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JAN1N5615US/TR
JAN1N5615US/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Grade: Military
Qualification: MIL-PRF-19500/429
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JANS1N5615/TR
JANS1N5615/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Grade: Military
Qualification: MIL-PRF-19500/429
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JANTXV1N5615US/TR
JANTXV1N5615US/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Qualification: MIL-PRF-19500/429
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1N5615E3
1N5615E3
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
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1N5615/TR 10968-sa7-47-datasheet
1N5615/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
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1N5615E3/TR
1N5615E3/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
товару немає в наявності
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JANTX1N5615US/TR
JANTX1N5615US/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Grade: Military
Qualification: MIL-PRF-19500/429
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JANS1N5615US/TR
JANS1N5615US/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Grade: Military
Qualification: MIL-PRF-19500/429
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JANTX1N5615US 150_1N5615US%20thru%201N5623US.pdf
JANTX1N5615US
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Grade: Military
Qualification: MIL-PRF-19500/429
товару немає в наявності
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JANTX1N4944/TR 129281-lds-0295-datasheet
JANTX1N4944/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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JAN1N4944/TR 129281-lds-0295-datasheet
JAN1N4944/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товару немає в наявності
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