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1N4760AUR/TR 1N4760AUR/TR Microchip Technology 1N4728UR-1N4764AUR.pdf Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 51.7 V
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USB7006T-I/KDX USB7006T-I/KDX Microchip Technology 00003715A.pdf Description: USB3.1 GEN1 HUB WITHOUT PD, 6-PO
Packaging: Cut Tape (CT)
Package / Case: 100-VFQFN Exposed Pad
Function: Hub Controller
Interface: GPIO, I2C, SPI, USB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.08V ~ 1.32V, 3V ~ 3.6V
Protocol: USB
Standards: USB 2.0, USB 3.2
Supplier Device Package: 100-VQFN (12x12)
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 1453 шт:
термін постачання 21-31 дні (днів)
1+622.92 грн
25+499.39 грн
100+482.51 грн
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MIC4723YMME MIC4723YMME Microchip Technology mic4723.pdf Description: IC REG BUCK ADJUSTABLE 3A 10MSOP
Packaging: Tube
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 10-MSOP-EP
Synchronous Rectifier: No
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 1V
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AT89C51ED2-RDRUM AT89C51ED2-RDRUM Microchip Technology doc4235.pdf Description: IC MCU 8BIT 64KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 60MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 80C51
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 50
DigiKey Programmable: Not Verified
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AT89C51ED2-RDRUM AT89C51ED2-RDRUM Microchip Technology doc4235.pdf Description: IC MCU 8BIT 64KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 60MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 80C51
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 50
DigiKey Programmable: Not Verified
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AT89C51ED2-SLRUM AT89C51ED2-SLRUM Microchip Technology doc4235.pdf Description: IC MCU 8BIT 64KB FLASH 44PLCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Speed: 60MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 80C51
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 44-PLCC (16.6x16.6)
Number of I/O: 34
DigiKey Programmable: Verified
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AT89C51ED2-SLRUM AT89C51ED2-SLRUM Microchip Technology doc4235.pdf Description: IC MCU 8BIT 64KB FLASH 44PLCC
Packaging: Cut Tape (CT)
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Speed: 60MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 80C51
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 44-PLCC (16.6x16.6)
Number of I/O: 34
DigiKey Programmable: Verified
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AT89C51ED2-RLTUM AT89C51ED2-RLTUM Microchip Technology doc4235.pdf Description: IC MCU 8BIT 64KB FLASH 44VQFP
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 60MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 80C51
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 44-VQFP (10x10)
Number of I/O: 34
DigiKey Programmable: Verified
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1N5420E3 1N5420E3 Microchip Technology Description: DIODE GEN PURP 600V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
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1N5420/TR 1N5420/TR Microchip Technology 124360-lds-0231-datasheet Description: DIODE GEN PURP 600V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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1N5420E3/TR 1N5420E3/TR Microchip Technology 124360-lds-0231-datasheet Description: DIODE GEN PURP 600V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
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JAN1N5420/TR JAN1N5420/TR Microchip Technology 124360-lds-0231-datasheet Description: DIODE GEN PURP 600V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: MIL-PRF-19500/411
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JANTX1N5420/TR JANTX1N5420/TR Microchip Technology 124360-lds-0231-datasheet Description: DIODE GEN PURP 600V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: MIL-PRF-19500/411
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JAN1N5420US/TR JAN1N5420US/TR Microchip Technology Description: DIODE GEN PURP 600V 3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: MIL-PRF-19500/411
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1N5420US/TR 1N5420US/TR Microchip Technology Description: DIODE GEN PURP 600V 3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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JANTX1N5420US/TR JANTX1N5420US/TR Microchip Technology Description: DIODE GEN PURP 600V 3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: MIL-PRF-19500/411
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JANTXV1N5420/TR JANTXV1N5420/TR Microchip Technology 124360-lds-0231-datasheet Description: DIODE GEN PURP 600V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: MIL-PRF-19500/411
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JANTXV1N5420US/TR JANTXV1N5420US/TR Microchip Technology Description: DIODE GEN PURP 600V 3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: MIL-PRF-19500/411
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JANS1N5420 JANS1N5420 Microchip Technology Description: DIODE GEN PURP 600V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Qualification: MIL-PRF-19500/411
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JANS1N5420/TR JANS1N5420/TR Microchip Technology 124360-lds-0231-datasheet Description: DIODE GEN PURP 600V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Qualification: MIL-PRF-19500/411
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JANS1N5420US JANS1N5420US Microchip Technology Description: DIODE GEN PURP 600V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Qualification: MIL-PRF-19500/411
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JANS1N5420US/TR JANS1N5420US/TR Microchip Technology Description: DIODE GEN PURP 600V 3A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Qualification: MIL-PRF-19500/411
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CD5341B CD5341B Microchip Technology 8375-cd5333b-cd5379b-datasheet Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: Die
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
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1N5806 1N5806 Microchip Technology LDS-0211+%282%29%2C+1N5802-1N5804-1N5806%2C+MIL-PRF-19500-477.pdf description Description: DIODE STANDARD 150V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
на замовлення 2927 шт:
термін постачання 21-31 дні (днів)
1+403.87 грн
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1N5807 1N5807 Microchip Technology LDS-0168-1%2C+1N5807US-1N5809US-1N5811US%28URS%29%2C+MIL-PRF-19500-477.pdf Description: DIODE STANDARD 50V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 175 шт:
термін постачання 21-31 дні (днів)
1+499.71 грн
100+446.92 грн
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ADM00871 ADM00871 Microchip Technology MIC2810-User-Guide-DS50002717A.pdf Description: EVAL BOARD FOR MIC2810
Packaging: Bulk
Voltage - Output: 1.25V, 1.4V, 3.3V
Voltage - Input: 3.6V ~ 5.5V
Current - Output: 600mA, 300mA, 300mA
Contents: Board(s)
Frequency - Switching: 2MHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: MIC2810
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down with LDO
Outputs and Type: 3 Non-Isolated Outputs
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2N6284 2N6284 Microchip Technology 132512-lds-0308-datasheet description Description: TRANS NPN DARL 100V 20A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 1A, 3V
Supplier Device Package: TO-204AA (TO-3)
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 175 W
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U3280M-NFBY Microchip Technology U3280M.pdf Description: IC RFID TRANSP 100-150KHZ 16SSOP
Packaging: Tube
Mounting Type: Surface Mount
Frequency: 100kHz ~ 150kHz
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6.5V
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ATMEGA2560-16CU ATMEGA2560-16CU Microchip Technology ATmega640-1280-1281-2560-2561-Datasheet-DS40002211A.pdf Description: IC MCU 8BIT 256KB FLASH 100CBGA
Packaging: Tray
Package / Case: 100-TFBGA
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 256KB (128K x 16)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: AVR
Data Converters: A/D 16x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 100-CBGA (9x9)
Number of I/O: 86
DigiKey Programmable: Not Verified
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ATMEGA2560V-8CU ATMEGA2560V-8CU Microchip Technology ATmega640-1280-1281-2560-2561-Datasheet-DS40002211A.pdf Description: IC MCU 8BIT 256KB FLASH 100CBGA
Packaging: Tray
Package / Case: 100-TFBGA
Mounting Type: Surface Mount
Speed: 8MHz
Program Memory Size: 256KB (128K x 16)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: AVR
Data Converters: A/D 16x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 100-CBGA (9x9)
Number of I/O: 86
DigiKey Programmable: Not Verified
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47L16T-I/ST 47L16T-I/ST Microchip Technology 47L04-47C04-47L16-47C16-4-Kbit-16-Kbit-I2C-Serial-EERAM-20005371E.pdf Description: IC EERAM 16KBIT I2C 1MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: EEPROM, SRAM
Clock Frequency: 1 MHz
Memory Format: EERAM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 1ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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47L16T-I/ST 47L16T-I/ST Microchip Technology 47L04-47C04-47L16-47C16-4-Kbit-16-Kbit-I2C-Serial-EERAM-20005371E.pdf Description: IC EERAM 16KBIT I2C 1MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: EEPROM, SRAM
Clock Frequency: 1 MHz
Memory Format: EERAM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 1ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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MAPLAD15KP14CAe3 MAPLAD15KP14CAe3 Microchip Technology 9522-mplad15kp-datasheet Description: TVS DIODE 14VWM 23.2VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 645A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
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PD-9506GC/AC-EK Microchip Technology PD-95XXGC-Data-Sheet.pdf Description: 6-PORT BT 60W NMS EU/UK CORD
Packaging: Box
Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm)
Mounting Type: Rack Mount
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 60W
Compliance: IEEE802.3af, IEEE802.3at, IEEE802.3bt
Number of Ports: 6
Standard Number: 60950-1
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+100123.55 грн
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PD-9612GC/AC-EK Microchip Technology PD-95XXGC-Data-Sheet.pdf Description: 12-PORT BT 90W NMS AC EU/UK CORD
Packaging: Box
Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm)
Mounting Type: Rack Mount
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 950W
Compliance: IEEE802.3af, IEEE802.3at, IEEE802.3bt
Number of Ports: 12
Standard Number: 62368-1
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+110318.76 грн
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PD-9501GC/AC-UK Microchip Technology 1244402-pd-9501gc-datasheet-sep23-2019 Description: 1-PORT BT 60W 1G AC UK CORD
Packaging: Bulk
Size / Dimension: 5.94" L x 2.44" W x 1.50" H (150.9mm x 62.0mm x 38.1mm)
Voltage - Output: 55V
Mounting Type: Desktop
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 60W
Compliance: IEEE802.3af, IEEE802.3at
Current - Output: 1.1 A
Number of Ports: 1
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PD-9501-10GC/AC-UK PD-9501-10GC/AC-UK Microchip Technology PD-9501-10GC_Datasheet.pdf Description: 1-PORT BT 60W 10G AC UK CORD
Packaging: Bulk
Size / Dimension: 6.93" L x 2.64" W x 1.51" H (176.0mm x 67.0mm x 38.3mm)
Voltage - Output: 55V
Mounting Type: Desktop
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Power (Watts) - Per Port: 60W
Compliance: IEEE802.3af, IEEE802.3at
Current - Output: 1.09 A
Number of Ports: 1
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PD-9501-10GC/AC-CN PD-9501-10GC/AC-CN Microchip Technology PD-9501-10GC_Datasheet.pdf Description: 1-PORT BT 60W 10G AC CN CORD
Packaging: Bulk
Size / Dimension: 6.93" L x 2.64" W x 1.51" H (176.0mm x 67.0mm x 38.3mm)
Voltage - Output: 55V
Mounting Type: Desktop
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 60W
Compliance: IEEE802.3af, IEEE802.3at, IEEE802.3bt
Number of Ports: 1
Standard Number: 60950-1
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PD-9606GC/AC-US Microchip Technology 1244405-pd-96xxgc-family-datasheet-sep23-2019 Description: 6-PORT BT 90W NMS AC US CORD
Packaging: Bulk
Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm)
Voltage - Output: 54V
Mounting Type: Rack Mount
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 90W
Compliance: IEEE802.3bt
Current - Output: 1.64 A
Number of Ports: 6
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PD-9606GC/AC-AU Microchip Technology 1244405-pd-96xxgc-family-datasheet-sep23-2019 Description: 6-PORT BT 90W NMS AC AU CORD
Packaging: Bulk
Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm)
Voltage - Output: 55V
Mounting Type: Rack Mount
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 90W
Compliance: IEEE802.3bt
Current - Output: 1.64 A
Number of Ports: 6
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PD-9606GC/AC-UK Microchip Technology 1244405-pd-96xxgc-family-datasheet-sep23-2019 Description: 6-PORT BT 90W NMS AC UK CORD
Packaging: Bulk
Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm)
Voltage - Output: 55V
Mounting Type: Rack Mount
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 90W
Compliance: IEEE802.3bt
Current - Output: 1.64 A
Number of Ports: 6
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1N5811URS/TR 1N5811URS/TR Microchip Technology 1N5807US%2C%201N5809US%2C%201N5811US%2CURS.pdf Description: UFR,FRR
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
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1N5811URS/TR 1N5811URS/TR Microchip Technology 1N5807US%2C%201N5809US%2C%201N5811US%2CURS.pdf Description: UFR,FRR
Packaging: Cut Tape (CT)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
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JANTXV1N5811URS/TR JANTXV1N5811URS/TR Microchip Technology 1N5807US%2C%201N5809US%2C%201N5811US%2CURS.pdf Description: UFR,FRR
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Qualification: MIL-PRF-19500/477
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JANS1N5811URS/TR JANS1N5811URS/TR Microchip Technology 1N5807US%2C%201N5809US%2C%201N5811US%2CURS.pdf Description: UFR,FRR
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Qualification: MIL-PRF-19500/477
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UXM15P/TR UXM15P/TR Microchip Technology SMD-00114_UXM15P_evaluation_board.pdf Description: 15GHZ PROGRAMMABLE 2/4/8 PRESCAL
Packaging: Tape & Reel (TR)
Package / Case: 24-TFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Prescaler
Frequency: 0Hz ~ 20GHz
RF Type: General Purpose
Secondary Attributes: Divide by 2, 4, 5, 6, 7, 8, 9
Supplier Device Package: 24-QFN (4x4)
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VTA1-2A0-10M0000000 Microchip Technology vta1.pdf Description: VTA1-2A0-10M0000000
Packaging: Tube
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VTA1-2B1-2M04800000 Microchip Technology vta1.pdf Description: VTA1-2B1-2M04800000
Packaging: Tube
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MP61010-M42 Microchip Technology Description: GAAS PIN HERMETIC PILL
Packaging: Bag
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 175°C
Capacitance @ Vr, F: 0.18pF @ 10V, 1MHz
Resistance @ If, F: 1Ohm @ 20mA, 1GHz
Voltage - Peak Reverse (Max): 50V
Current - Max: 50 mA
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MP61012-P00 Microchip Technology Description: GAAS PIN NON HERMETIC CHIP
Packaging: Tray
Package / Case: Die
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 175°C
Capacitance @ Vr, F: 0.35pF @ 10V, 1MHz
Resistance @ If, F: 800mOhm @ 20mA, 1GHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: Chip
Current - Max: 50 mA
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2N3792 2N3792 Microchip Technology 2N3791-2N3792-MIL-PRF-19500-379.PDF Description: TRANS PNP 80V 10A TO-3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 5 W
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MXSMCGLCE24A Microchip Technology 10562-msmclce-datasheet Description: TVS DIODE 24VWM 38.9VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 39A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMCG (DO-215AB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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JANTX1N3338B Microchip Technology Description: ZENER DIODE
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: DO-5
Power - Max: 50 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 62.2 V
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JANTXV1N3338B Microchip Technology Description: ZENER DIODE
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: DO-5
Power - Max: 50 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 62.2 V
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MCP73223T-C2SI/MF MCP73223T-C2SI/MF Microchip Technology 22191E.pdf Description: IC BAT CNTL IRON PHOS 1-2C 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Number of Cells: 1 ~ 2
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Iron Phosphate
Supplier Device Package: 10-DFN (3x3)
Charge Current - Max: 1.1A
Programmable Features: Current, Timer
Fault Protection: Over Temperature, Over Voltage, Reverse Current
Voltage - Supply (Max): 16V
Battery Pack Voltage: 7.2V
Current - Charging: Constant - Programmable
на замовлення 9900 шт:
термін постачання 21-31 дні (днів)
3300+134.50 грн
Мінімальне замовлення: 3300
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MCP73223T-C2SI/MF MCP73223T-C2SI/MF Microchip Technology 22191E.pdf Description: IC BAT CNTL IRON PHOS 1-2C 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Number of Cells: 1 ~ 2
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Iron Phosphate
Supplier Device Package: 10-DFN (3x3)
Charge Current - Max: 1.1A
Programmable Features: Current, Timer
Fault Protection: Over Temperature, Over Voltage, Reverse Current
Voltage - Supply (Max): 16V
Battery Pack Voltage: 7.2V
Current - Charging: Constant - Programmable
на замовлення 12465 шт:
термін постачання 21-31 дні (днів)
2+177.98 грн
25+143.04 грн
100+129.52 грн
Мінімальне замовлення: 2
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MAX24287ETK2T Microchip Technology 126639-max24287-datasheet Description: IC INTERFACE SPECIALIZED 68TQFN
Packaging: Tape & Reel (TR)
Package / Case: 68-WFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Ethernet
Voltage - Supply: 1.14V ~ 3.465V
Applications: Switch Interfacing
Supplier Device Package: 68-TQFN-EP (8x8)
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MAX24287ETK2T Microchip Technology 126639-max24287-datasheet Description: IC INTERFACE SPECIALIZED 68TQFN
Packaging: Cut Tape (CT)
Package / Case: 68-WFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Ethernet
Voltage - Supply: 1.14V ~ 3.465V
Applications: Switch Interfacing
Supplier Device Package: 68-TQFN-EP (8x8)
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JAN1N5546DUR-1 JAN1N5546DUR-1 Microchip Technology 8860-lds-0037-datasheet Description: DIODE ZENER 33V 500MW DO213AA
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 29.7 V
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24LC128-I/SNG 24LC128-I/SNG Microchip Technology 24AA128-24LC128-24FC128-128-Kbit-I2C-Serial-EEPROM-20001191U.pdf Description: IC EEPROM 128KBIT I2C 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 16K x 8
Qualification: AEC-Q100
на замовлення 70 шт:
термін постачання 21-31 дні (днів)
6+63.32 грн
25+57.94 грн
Мінімальне замовлення: 6
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1N4760AUR/TR 1N4728UR-1N4764AUR.pdf
1N4760AUR/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 51.7 V
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USB7006T-I/KDX 00003715A.pdf
USB7006T-I/KDX
Виробник: Microchip Technology
Description: USB3.1 GEN1 HUB WITHOUT PD, 6-PO
Packaging: Cut Tape (CT)
Package / Case: 100-VFQFN Exposed Pad
Function: Hub Controller
Interface: GPIO, I2C, SPI, USB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.08V ~ 1.32V, 3V ~ 3.6V
Protocol: USB
Standards: USB 2.0, USB 3.2
Supplier Device Package: 100-VQFN (12x12)
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 1453 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+622.92 грн
25+499.39 грн
100+482.51 грн
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MIC4723YMME mic4723.pdf
MIC4723YMME
Виробник: Microchip Technology
Description: IC REG BUCK ADJUSTABLE 3A 10MSOP
Packaging: Tube
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 10-MSOP-EP
Synchronous Rectifier: No
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 1V
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AT89C51ED2-RDRUM doc4235.pdf
AT89C51ED2-RDRUM
Виробник: Microchip Technology
Description: IC MCU 8BIT 64KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 60MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 80C51
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 50
DigiKey Programmable: Not Verified
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AT89C51ED2-RDRUM doc4235.pdf
AT89C51ED2-RDRUM
Виробник: Microchip Technology
Description: IC MCU 8BIT 64KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 60MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 80C51
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 50
DigiKey Programmable: Not Verified
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AT89C51ED2-SLRUM doc4235.pdf
AT89C51ED2-SLRUM
Виробник: Microchip Technology
Description: IC MCU 8BIT 64KB FLASH 44PLCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Speed: 60MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 80C51
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 44-PLCC (16.6x16.6)
Number of I/O: 34
DigiKey Programmable: Verified
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AT89C51ED2-SLRUM doc4235.pdf
AT89C51ED2-SLRUM
Виробник: Microchip Technology
Description: IC MCU 8BIT 64KB FLASH 44PLCC
Packaging: Cut Tape (CT)
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Speed: 60MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 80C51
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 44-PLCC (16.6x16.6)
Number of I/O: 34
DigiKey Programmable: Verified
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AT89C51ED2-RLTUM doc4235.pdf
AT89C51ED2-RLTUM
Виробник: Microchip Technology
Description: IC MCU 8BIT 64KB FLASH 44VQFP
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 60MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 80C51
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 44-VQFP (10x10)
Number of I/O: 34
DigiKey Programmable: Verified
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1N5420E3
1N5420E3
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
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1N5420/TR 124360-lds-0231-datasheet
1N5420/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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1N5420E3/TR 124360-lds-0231-datasheet
1N5420E3/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
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JAN1N5420/TR 124360-lds-0231-datasheet
JAN1N5420/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: MIL-PRF-19500/411
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JANTX1N5420/TR 124360-lds-0231-datasheet
JANTX1N5420/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: MIL-PRF-19500/411
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JAN1N5420US/TR
JAN1N5420US/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: MIL-PRF-19500/411
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1N5420US/TR
1N5420US/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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JANTX1N5420US/TR
JANTX1N5420US/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: MIL-PRF-19500/411
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JANTXV1N5420/TR 124360-lds-0231-datasheet
JANTXV1N5420/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: MIL-PRF-19500/411
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JANTXV1N5420US/TR
JANTXV1N5420US/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: MIL-PRF-19500/411
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JANS1N5420
JANS1N5420
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Qualification: MIL-PRF-19500/411
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JANS1N5420/TR 124360-lds-0231-datasheet
JANS1N5420/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Qualification: MIL-PRF-19500/411
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JANS1N5420US
JANS1N5420US
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Qualification: MIL-PRF-19500/411
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JANS1N5420US/TR
JANS1N5420US/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 3A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Qualification: MIL-PRF-19500/411
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CD5341B 8375-cd5333b-cd5379b-datasheet
CD5341B
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: Die
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
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1N5806 description LDS-0211+%282%29%2C+1N5802-1N5804-1N5806%2C+MIL-PRF-19500-477.pdf
1N5806
Виробник: Microchip Technology
Description: DIODE STANDARD 150V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
на замовлення 2927 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+403.87 грн
100+360.82 грн
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1N5807 LDS-0168-1%2C+1N5807US-1N5809US-1N5811US%28URS%29%2C+MIL-PRF-19500-477.pdf
1N5807
Виробник: Microchip Technology
Description: DIODE STANDARD 50V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 175 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+499.71 грн
100+446.92 грн
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ADM00871 MIC2810-User-Guide-DS50002717A.pdf
ADM00871
Виробник: Microchip Technology
Description: EVAL BOARD FOR MIC2810
Packaging: Bulk
Voltage - Output: 1.25V, 1.4V, 3.3V
Voltage - Input: 3.6V ~ 5.5V
Current - Output: 600mA, 300mA, 300mA
Contents: Board(s)
Frequency - Switching: 2MHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: MIC2810
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down with LDO
Outputs and Type: 3 Non-Isolated Outputs
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2N6284 description 132512-lds-0308-datasheet
2N6284
Виробник: Microchip Technology
Description: TRANS NPN DARL 100V 20A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 1A, 3V
Supplier Device Package: TO-204AA (TO-3)
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 175 W
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U3280M-NFBY U3280M.pdf
Виробник: Microchip Technology
Description: IC RFID TRANSP 100-150KHZ 16SSOP
Packaging: Tube
Mounting Type: Surface Mount
Frequency: 100kHz ~ 150kHz
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6.5V
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ATMEGA2560-16CU ATmega640-1280-1281-2560-2561-Datasheet-DS40002211A.pdf
ATMEGA2560-16CU
Виробник: Microchip Technology
Description: IC MCU 8BIT 256KB FLASH 100CBGA
Packaging: Tray
Package / Case: 100-TFBGA
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 256KB (128K x 16)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: AVR
Data Converters: A/D 16x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 100-CBGA (9x9)
Number of I/O: 86
DigiKey Programmable: Not Verified
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ATMEGA2560V-8CU ATmega640-1280-1281-2560-2561-Datasheet-DS40002211A.pdf
ATMEGA2560V-8CU
Виробник: Microchip Technology
Description: IC MCU 8BIT 256KB FLASH 100CBGA
Packaging: Tray
Package / Case: 100-TFBGA
Mounting Type: Surface Mount
Speed: 8MHz
Program Memory Size: 256KB (128K x 16)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: AVR
Data Converters: A/D 16x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 100-CBGA (9x9)
Number of I/O: 86
DigiKey Programmable: Not Verified
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47L16T-I/ST 47L04-47C04-47L16-47C16-4-Kbit-16-Kbit-I2C-Serial-EERAM-20005371E.pdf
47L16T-I/ST
Виробник: Microchip Technology
Description: IC EERAM 16KBIT I2C 1MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: EEPROM, SRAM
Clock Frequency: 1 MHz
Memory Format: EERAM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 1ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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47L16T-I/ST 47L04-47C04-47L16-47C16-4-Kbit-16-Kbit-I2C-Serial-EERAM-20005371E.pdf
47L16T-I/ST
Виробник: Microchip Technology
Description: IC EERAM 16KBIT I2C 1MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: EEPROM, SRAM
Clock Frequency: 1 MHz
Memory Format: EERAM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 1ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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MAPLAD15KP14CAe3 9522-mplad15kp-datasheet
MAPLAD15KP14CAe3
Виробник: Microchip Technology
Description: TVS DIODE 14VWM 23.2VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 645A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
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PD-9506GC/AC-EK PD-95XXGC-Data-Sheet.pdf
Виробник: Microchip Technology
Description: 6-PORT BT 60W NMS EU/UK CORD
Packaging: Box
Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm)
Mounting Type: Rack Mount
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 60W
Compliance: IEEE802.3af, IEEE802.3at, IEEE802.3bt
Number of Ports: 6
Standard Number: 60950-1
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+100123.55 грн
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PD-9612GC/AC-EK PD-95XXGC-Data-Sheet.pdf
Виробник: Microchip Technology
Description: 12-PORT BT 90W NMS AC EU/UK CORD
Packaging: Box
Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm)
Mounting Type: Rack Mount
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 950W
Compliance: IEEE802.3af, IEEE802.3at, IEEE802.3bt
Number of Ports: 12
Standard Number: 62368-1
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+110318.76 грн
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PD-9501GC/AC-UK 1244402-pd-9501gc-datasheet-sep23-2019
Виробник: Microchip Technology
Description: 1-PORT BT 60W 1G AC UK CORD
Packaging: Bulk
Size / Dimension: 5.94" L x 2.44" W x 1.50" H (150.9mm x 62.0mm x 38.1mm)
Voltage - Output: 55V
Mounting Type: Desktop
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 60W
Compliance: IEEE802.3af, IEEE802.3at
Current - Output: 1.1 A
Number of Ports: 1
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PD-9501-10GC/AC-UK PD-9501-10GC_Datasheet.pdf
PD-9501-10GC/AC-UK
Виробник: Microchip Technology
Description: 1-PORT BT 60W 10G AC UK CORD
Packaging: Bulk
Size / Dimension: 6.93" L x 2.64" W x 1.51" H (176.0mm x 67.0mm x 38.3mm)
Voltage - Output: 55V
Mounting Type: Desktop
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Power (Watts) - Per Port: 60W
Compliance: IEEE802.3af, IEEE802.3at
Current - Output: 1.09 A
Number of Ports: 1
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PD-9501-10GC/AC-CN PD-9501-10GC_Datasheet.pdf
PD-9501-10GC/AC-CN
Виробник: Microchip Technology
Description: 1-PORT BT 60W 10G AC CN CORD
Packaging: Bulk
Size / Dimension: 6.93" L x 2.64" W x 1.51" H (176.0mm x 67.0mm x 38.3mm)
Voltage - Output: 55V
Mounting Type: Desktop
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 60W
Compliance: IEEE802.3af, IEEE802.3at, IEEE802.3bt
Number of Ports: 1
Standard Number: 60950-1
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PD-9606GC/AC-US 1244405-pd-96xxgc-family-datasheet-sep23-2019
Виробник: Microchip Technology
Description: 6-PORT BT 90W NMS AC US CORD
Packaging: Bulk
Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm)
Voltage - Output: 54V
Mounting Type: Rack Mount
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 90W
Compliance: IEEE802.3bt
Current - Output: 1.64 A
Number of Ports: 6
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PD-9606GC/AC-AU 1244405-pd-96xxgc-family-datasheet-sep23-2019
Виробник: Microchip Technology
Description: 6-PORT BT 90W NMS AC AU CORD
Packaging: Bulk
Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm)
Voltage - Output: 55V
Mounting Type: Rack Mount
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 90W
Compliance: IEEE802.3bt
Current - Output: 1.64 A
Number of Ports: 6
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PD-9606GC/AC-UK 1244405-pd-96xxgc-family-datasheet-sep23-2019
Виробник: Microchip Technology
Description: 6-PORT BT 90W NMS AC UK CORD
Packaging: Bulk
Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm)
Voltage - Output: 55V
Mounting Type: Rack Mount
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 90W
Compliance: IEEE802.3bt
Current - Output: 1.64 A
Number of Ports: 6
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1N5811URS/TR 1N5807US%2C%201N5809US%2C%201N5811US%2CURS.pdf
1N5811URS/TR
Виробник: Microchip Technology
Description: UFR,FRR
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
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1N5811URS/TR 1N5807US%2C%201N5809US%2C%201N5811US%2CURS.pdf
1N5811URS/TR
Виробник: Microchip Technology
Description: UFR,FRR
Packaging: Cut Tape (CT)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
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JANTXV1N5811URS/TR 1N5807US%2C%201N5809US%2C%201N5811US%2CURS.pdf
JANTXV1N5811URS/TR
Виробник: Microchip Technology
Description: UFR,FRR
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Qualification: MIL-PRF-19500/477
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JANS1N5811URS/TR 1N5807US%2C%201N5809US%2C%201N5811US%2CURS.pdf
JANS1N5811URS/TR
Виробник: Microchip Technology
Description: UFR,FRR
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Qualification: MIL-PRF-19500/477
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UXM15P/TR SMD-00114_UXM15P_evaluation_board.pdf
UXM15P/TR
Виробник: Microchip Technology
Description: 15GHZ PROGRAMMABLE 2/4/8 PRESCAL
Packaging: Tape & Reel (TR)
Package / Case: 24-TFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Prescaler
Frequency: 0Hz ~ 20GHz
RF Type: General Purpose
Secondary Attributes: Divide by 2, 4, 5, 6, 7, 8, 9
Supplier Device Package: 24-QFN (4x4)
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VTA1-2A0-10M0000000 vta1.pdf
Виробник: Microchip Technology
Description: VTA1-2A0-10M0000000
Packaging: Tube
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VTA1-2B1-2M04800000 vta1.pdf
Виробник: Microchip Technology
Description: VTA1-2B1-2M04800000
Packaging: Tube
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MP61010-M42
Виробник: Microchip Technology
Description: GAAS PIN HERMETIC PILL
Packaging: Bag
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 175°C
Capacitance @ Vr, F: 0.18pF @ 10V, 1MHz
Resistance @ If, F: 1Ohm @ 20mA, 1GHz
Voltage - Peak Reverse (Max): 50V
Current - Max: 50 mA
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MP61012-P00
Виробник: Microchip Technology
Description: GAAS PIN NON HERMETIC CHIP
Packaging: Tray
Package / Case: Die
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 175°C
Capacitance @ Vr, F: 0.35pF @ 10V, 1MHz
Resistance @ If, F: 800mOhm @ 20mA, 1GHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: Chip
Current - Max: 50 mA
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2N3792 2N3791-2N3792-MIL-PRF-19500-379.PDF
2N3792
Виробник: Microchip Technology
Description: TRANS PNP 80V 10A TO-3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 5 W
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MXSMCGLCE24A 10562-msmclce-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 24VWM 38.9VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 39A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMCG (DO-215AB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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JANTX1N3338B
Виробник: Microchip Technology
Description: ZENER DIODE
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: DO-5
Power - Max: 50 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 62.2 V
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JANTXV1N3338B
Виробник: Microchip Technology
Description: ZENER DIODE
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: DO-5
Power - Max: 50 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 62.2 V
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MCP73223T-C2SI/MF 22191E.pdf
MCP73223T-C2SI/MF
Виробник: Microchip Technology
Description: IC BAT CNTL IRON PHOS 1-2C 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Number of Cells: 1 ~ 2
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Iron Phosphate
Supplier Device Package: 10-DFN (3x3)
Charge Current - Max: 1.1A
Programmable Features: Current, Timer
Fault Protection: Over Temperature, Over Voltage, Reverse Current
Voltage - Supply (Max): 16V
Battery Pack Voltage: 7.2V
Current - Charging: Constant - Programmable
на замовлення 9900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3300+134.50 грн
Мінімальне замовлення: 3300
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MCP73223T-C2SI/MF 22191E.pdf
MCP73223T-C2SI/MF
Виробник: Microchip Technology
Description: IC BAT CNTL IRON PHOS 1-2C 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Number of Cells: 1 ~ 2
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Iron Phosphate
Supplier Device Package: 10-DFN (3x3)
Charge Current - Max: 1.1A
Programmable Features: Current, Timer
Fault Protection: Over Temperature, Over Voltage, Reverse Current
Voltage - Supply (Max): 16V
Battery Pack Voltage: 7.2V
Current - Charging: Constant - Programmable
на замовлення 12465 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+177.98 грн
25+143.04 грн
100+129.52 грн
Мінімальне замовлення: 2
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MAX24287ETK2T 126639-max24287-datasheet
Виробник: Microchip Technology
Description: IC INTERFACE SPECIALIZED 68TQFN
Packaging: Tape & Reel (TR)
Package / Case: 68-WFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Ethernet
Voltage - Supply: 1.14V ~ 3.465V
Applications: Switch Interfacing
Supplier Device Package: 68-TQFN-EP (8x8)
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MAX24287ETK2T 126639-max24287-datasheet
Виробник: Microchip Technology
Description: IC INTERFACE SPECIALIZED 68TQFN
Packaging: Cut Tape (CT)
Package / Case: 68-WFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Ethernet
Voltage - Supply: 1.14V ~ 3.465V
Applications: Switch Interfacing
Supplier Device Package: 68-TQFN-EP (8x8)
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JAN1N5546DUR-1 8860-lds-0037-datasheet
JAN1N5546DUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 33V 500MW DO213AA
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 29.7 V
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24LC128-I/SNG 24AA128-24LC128-24FC128-128-Kbit-I2C-Serial-EEPROM-20001191U.pdf
24LC128-I/SNG
Виробник: Microchip Technology
Description: IC EEPROM 128KBIT I2C 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 16K x 8
Qualification: AEC-Q100
на замовлення 70 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+63.32 грн
25+57.94 грн
Мінімальне замовлення: 6
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