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1N2492 1N2492 Microchip Technology S,R20.pdf Description: DIODE GEN PURP 100V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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1N2494 1N2494 Microchip Technology S,R20.pdf Description: DIODE GEN PURP 300V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
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1N2493 1N2493 Microchip Technology S,R20.pdf Description: DIODE GEN PURP 200V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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1N2491 1N2491 Microchip Technology S,R20.pdf Description: DIODE GEN PURP 50V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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1N2495 1N2495 Microchip Technology S,R20.pdf Description: DIODE GEN PURP 400V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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1N2496 1N2496 Microchip Technology S,R20.pdf Description: DIODE GEN PURP 500V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
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1N2497 1N2497 Microchip Technology S,R20.pdf Description: DIODE GEN PURP 600V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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1N249B Microchip Technology S,R304.pdf Description: DIODE GEN PURP 100V 20A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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1N249A Microchip Technology S,R304.pdf Description: DIODE GEN PURP 100V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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1N249C Microchip Technology S,R304.pdf Description: DIODE GEN PURP 100V 20A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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1N249 Microchip Technology S,R304.pdf Description: DIODE GEN PURP 100V 10A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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CD5367B CD5367B Microchip Technology 8375-cd5333b-cd5379b-datasheet Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: Die
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 32.7 V
на замовлення 167 шт:
термін постачання 21-31 дні (днів)
1+427.83 грн
100+382.92 грн
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CD5367B CD5367B Microchip Technology 8375-cd5333b-cd5379b-datasheet Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: Die
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 32.7 V
на замовлення 167 шт:
термін постачання 21-31 дні (днів)
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1N5918UR-1/TR 1N5918UR-1/TR Microchip Technology 1N5913BUR-1-1N5956BUR-1.pdf Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
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1N5918UR-1/TR 1N5918UR-1/TR Microchip Technology 1N5913BUR-1-1N5956BUR-1.pdf Description: VOLTAGE REGULATOR
Packaging: Cut Tape (CT)
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1N5918BUR-1/TR 1N5918BUR-1/TR Microchip Technology 1N5913BUR-1-1N5956BUR-1.pdf Description: DIODE ZENER 5.1V 1.25W DO213AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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1N5918BUR-1/TR 1N5918BUR-1/TR Microchip Technology 1N5913BUR-1-1N5956BUR-1.pdf Description: DIODE ZENER 5.1V 1.25W DO213AB
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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1N5930BUR-1/TR 1N5930BUR-1/TR Microchip Technology 1N5913BUR-1-1N5956BUR-1.pdf Description: DIODE ZENER 16V 1.25W DO213AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
на замовлення 233 шт:
термін постачання 21-31 дні (днів)
233+297.39 грн
Мінімальне замовлення: 233
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1N5930BUR-1/TR 1N5930BUR-1/TR Microchip Technology 1N5913BUR-1-1N5956BUR-1.pdf Description: DIODE ZENER 16V 1.25W DO213AB
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
на замовлення 233 шт:
термін постачання 21-31 дні (днів)
2+320.02 грн
100+286.37 грн
Мінімальне замовлення: 2
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1N4762AUR/TR 1N4762AUR/TR Microchip Technology 1N4728UR-1N4764AUR.pdf Description: DIODE ZENER 82V 1W DO213AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 62.2 V
на замовлення 272 шт:
термін постачання 21-31 дні (днів)
272+231.32 грн
Мінімальне замовлення: 272
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1N4762AUR/TR 1N4762AUR/TR Microchip Technology 1N4728UR-1N4764AUR.pdf Description: DIODE ZENER 82V 1W DO213AB
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 62.2 V
на замовлення 272 шт:
термін постачання 21-31 дні (днів)
2+272.96 грн
Мінімальне замовлення: 2
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1N4762UR-1/TR 1N4762UR-1/TR Microchip Technology 1N4728UR-1N4764AUR.pdf Description: DIODE ZENER 82V 1W DO213AB
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 62.2 V
на замовлення 272 шт:
термін постачання 21-31 дні (днів)
272+312.68 грн
Мінімальне замовлення: 272
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1N4762UR-1/TR 1N4762UR-1/TR Microchip Technology 1N4728UR-1N4764AUR.pdf Description: DIODE ZENER 82V 1W DO213AB
Tolerance: ±10%
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 62.2 V
на замовлення 272 шт:
термін постачання 21-31 дні (днів)
1+368.79 грн
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MIC2950-05BZ MIC2950-05BZ Microchip Technology mic2950.pdf Description: IC REG LIN POS ADJ 150MA TO92-3
Packaging: Tube
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Adjustable (Fixed)
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 30V
Number of Regulators: 1
Supplier Device Package: TO-92-3
Voltage - Output (Max): 29V
Voltage - Output (Min/Fixed): 1.24V (5V)
Control Features: Enable
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 8 mA
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AT89C51CC01UA-RLTUM AT89C51CC01UA-RLTUM Microchip Technology doc4129.pdf description Description: IC MCU 8BIT 32KB FLASH 44VQFP
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1.25K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 80C51
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 44-VQFP (10x10)
Number of I/O: 34
DigiKey Programmable: Verified
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AT89C51CC01CA-RLTUM AT89C51CC01CA-RLTUM Microchip Technology doc4129.pdf Description: IC MCU 8BIT 32KB FLASH 44VQFP
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1.25K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 80C51
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 44-VQFP (10x10)
Number of I/O: 34
DigiKey Programmable: Verified
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AT89C51CC01UA-RLRUM AT89C51CC01UA-RLRUM Microchip Technology doc4129.pdf Description: IC MCU 8BIT 32KB FLASH 44VQFP
Packaging: Tape & Reel (TR)
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1.25K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 80C51
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 44-VQFP (10x10)
Number of I/O: 34
DigiKey Programmable: Not Verified
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JAN1N972B-1 JAN1N972B-1 Microchip Technology Description: ZENER DIODE
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TA)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 21 V
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JAN1N972B-1/TR JAN1N972B-1/TR Microchip Technology Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TA)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 21 V
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M1.5KE22A Microchip Technology RF01008_rE.pdf Description: TVS DIODE 18.8VWM 30.6VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 49A
Voltage - Reverse Standoff (Typ): 18.8V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20.9V
Voltage - Clamping (Max) @ Ipp: 30.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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JANTXV1N972B-1 JANTXV1N972B-1 Microchip Technology 125314-lds-0287-datasheet Description: DIODE ZENER 30V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 23 V
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JANTXV1N972B-1/TR JANTXV1N972B-1/TR Microchip Technology Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 23 V
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JAN1N972C-1 JAN1N972C-1 Microchip Technology 125314-lds-0287-datasheet Description: DIODE ZENER 30V 500MW DO35
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 23 V
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JAN1N972BUR-1 JAN1N972BUR-1 Microchip Technology 125313-lds-0287-1-datasheet Description: DIODE ZENER 30V 500MW DO213AA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 23 V
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JAN1N972C-1/TR JAN1N972C-1/TR Microchip Technology Description: VOLTAGE REGULATOR
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 23 V
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JAN1N972BUR-1/TR JAN1N972BUR-1/TR Microchip Technology Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 23 V
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JAN1N972D-1 JAN1N972D-1 Microchip Technology 125314-lds-0287-datasheet Description: DIODE ZENER 30V 500MW DO35
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 23 V
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1N5223BUR-1/TR 1N5223BUR-1/TR Microchip Technology 1N5221BUR-1%20thru%201N5281BUR-1.pdf Description: DIODE ZENER 2.7V 500MW DO213AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
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1N5223BUR-1/TR 1N5223BUR-1/TR Microchip Technology 1N5221BUR-1%20thru%201N5281BUR-1.pdf Description: DIODE ZENER 2.7V 500MW DO213AA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
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1N5299-1/TR 1N5299-1/TR Microchip Technology 8970-lds-0159-pdf.pdf Description: DIODE CUR REG 100V 1.32MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.32mA
Voltage - Limiting (Max): 1.45V
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JANTX1N5299-1/TR JANTX1N5299-1/TR Microchip Technology Description: DIODE CUR REG 100V 1.32MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Grade: Military
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.32mA
Voltage - Limiting (Max): 1.45V
Qualification: MIL-PRF-19500/463
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GC6002-350A/TR Microchip Technology Description: SI NOISE NON HERMETIC EPSM SMT
Packaging: Tray
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 1pF @ 6V, 1MHz
Voltage - Peak Reverse (Max): 14V
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GC4494-00 Microchip Technology Description: SI PIN NON HERMETIC CHIP
Packaging: Tray
Package / Case: Die
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 1.3pF @ 50V, 1MHz
Resistance @ If, F: 350mOhm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 750V
Supplier Device Package: Chip
Current - Max: 50 mA
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GC4215-150B Microchip Technology Description: SI PIN NON HERMETIC EPSM SMT
Packaging: Tape & Reel (TR)
Package / Case: Die
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 0.5pF @ 10V, 1MHz
Resistance @ If, F: 350mOhm @ 20mA, 1GHz
Voltage - Peak Reverse (Max): 100V
Supplier Device Package: Chip
Current - Max: 10 mA
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GC6002-350A Microchip Technology Description: SI NOISE NON HERMETIC EPSM SMT
Packaging: Tape & Reel (TR)
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 1pF @ 6V, 1MHz
Voltage - Peak Reverse (Max): 14V
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GC4494-171 GC4494-171 Microchip Technology Description: SI PIN HERMETIC PILL
Packaging: Bag
Package / Case: SQ-MELF
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 1.3pF @ 50V, 1MHz
Resistance @ If, F: 350mOhm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 750V
Current - Max: 50 mA
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GC4215-00 Microchip Technology Description: SI PIN NON HERMETIC CHIP
Packaging: Tray
Package / Case: Die
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 0.5pF @ 10V, 1MHz
Resistance @ If, F: 350mOhm @ 20mA, 1GHz
Voltage - Peak Reverse (Max): 100V
Supplier Device Package: Chip
Current - Max: 10 mA
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GC4215-154-2 Microchip Technology Description: SI PIN NON HERMETIC EPSM SMT
Packaging: Tape & Reel (TR)
Package / Case: Die
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 0.5pF @ 10V, 1MHz
Resistance @ If, F: 350mOhm @ 20mA, 1GHz
Voltage - Peak Reverse (Max): 100V
Supplier Device Package: Chip
Current - Max: 10 mA
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GC4215-154-2/TR Microchip Technology Description: SI PIN NON HERMETIC EPSM SMT
Packaging: Tray
Package / Case: Die
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 0.5pF @ 10V, 1MHz
Resistance @ If, F: 350mOhm @ 20mA, 1GHz
Voltage - Peak Reverse (Max): 100V
Supplier Device Package: Chip
Current - Max: 10 mA
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GC4494-01 Microchip Technology Description: SI PIN NON HERMETIC CHIP W LEAD
Packaging: Tray
Package / Case: Die
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 1.3pF @ 50V, 1MHz
Resistance @ If, F: 350mOhm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 750V
Supplier Device Package: Chip
Current - Max: 50 mA
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KV2101-00 Microchip Technology Description: SI TVAR NON HERMETIC CHIP
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 2.3pF @ 20V, 1MHz
Q @ Vr, F: 350 @ 3V, 50MHz
Capacitance Ratio Condition: C3/C20
Supplier Device Package: Chip
Voltage - Peak Reverse (Max): 22 V
Capacitance Ratio: 5.4
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DSC2010FI2-B0009 DSC2010FI2-B0009 Microchip Technology DSC2010FI2-B0009.pdf Description: MEMS OSC XO 2.25V-3.6V 14SMD
Packaging: Tube
Package / Case: 14-VFQFN Exposed Pad
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.6V
Height: 0.035" (0.90mm)
Current - Supply (Max): 35mA
Frequency - Output 1: 45.1584MHz, 49.152MHz
Base Resonator: MEMS
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DSC2010FI2-B0014 DSC2010FI2-B0014 Microchip Technology DSC2010FI2-B0014.pdf Description: MEMS OSC XO 2.25V-3.6V 14SMD
Packaging: Tube
Package / Case: 14-VFQFN Exposed Pad
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.6V
Height: 0.035" (0.90mm)
Current - Supply (Max): 35mA
Frequency - Output 1: 26.973MHz, 27MHz
Frequency - Output 2: 27MHz
Base Resonator: MEMS
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DSC2010FM2-A0001 DSC2010FM2-A0001 Microchip Technology DSC2010FM2-A0001.pdf Description: MEMS OSC XO 2.25V-3.6V 14SMD
Packaging: Tube
Package / Case: 14-VFQFN Exposed Pad
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Enable/Disable
Frequency - Max: 148.5MHz
Type: Clock Generator
Operating Temperature: -55°C ~ 125°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.6V
Height: 0.035" (0.90mm)
Current - Supply (Max): 35mA
Ratio - Input:Output: 0:1
Differential - Input:Output: No/No
Supplier Device Package: 14-QFN (3.2x2.5)
PLL: Yes
Divider/Multiplier: Yes/No
Frequency - Output 1: 24MHz, 27MHz, 74.25MHz, 148.5MHz
Number of Circuits: 1
Base Resonator: MEMS
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DSC2010FM2-B0006 DSC2010FM2-B0006 Microchip Technology DSC2010FM2-B0006.pdf Description: MEMS OSC XO 2.25V-3.6V 14SMD
Packaging: Tube
Package / Case: 14-VFQFN Exposed Pad
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -55°C ~ 125°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.6V
Height: 0.035" (0.90mm)
Current - Supply (Max): 35mA
Frequency - Output 1: 24MHz, 27MHz, 74.25MHz, 148.5MHz
Base Resonator: MEMS
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ATTINY261-20SU ATTINY261-20SU Microchip Technology Atmel-2588-8-bit-AVR-Microcontrollers-tinyAVR-ATtiny261-ATtiny461-ATtiny861_Datasheet.pdf description Description: IC MCU 8BIT 2KB FLASH 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 2KB (1K x 16)
RAM Size: 128 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128 x 8
Core Processor: AVR
Data Converters: A/D 11x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: USI
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 20-SOIC
Number of I/O: 16
DigiKey Programmable: Not Verified
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JANTXV1N5530DUR-1 JANTXV1N5530DUR-1 Microchip Technology 1N5518BUR-1_1N5546BUR-1.pdf Description: DIODE ZENER 10V 500MW DO213AA
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.1 V
Qualification: MIL-PRF-19500/437
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CD4114 CD4114 Microchip Technology 8362-cd4099-cd4135-datasheet Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: Die
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 15.2 V
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CD4150 CD4150 Microchip Technology 8364-cd4148-914-3600-4150-datasheet Description: DIODE GEN PURP 50V 200MA DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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CD4153 CD4153 Microchip Technology 8364-cd4148-914-3600-4150-datasheet Description: DIODE GEN PURP 50V 20MA DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 20mA
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 20 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
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1N2492 S,R20.pdf
1N2492
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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1N2494 S,R20.pdf
1N2494
Виробник: Microchip Technology
Description: DIODE GEN PURP 300V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
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1N2493 S,R20.pdf
1N2493
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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1N2491 S,R20.pdf
1N2491
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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1N2495 S,R20.pdf
1N2495
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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1N2496 S,R20.pdf
1N2496
Виробник: Microchip Technology
Description: DIODE GEN PURP 500V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
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1N2497 S,R20.pdf
1N2497
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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1N249B S,R304.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 20A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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1N249A S,R304.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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1N249C S,R304.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 20A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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1N249 S,R304.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 10A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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CD5367B 8375-cd5333b-cd5379b-datasheet
CD5367B
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: Die
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 32.7 V
на замовлення 167 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+427.83 грн
100+382.92 грн
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CD5367B 8375-cd5333b-cd5379b-datasheet
CD5367B
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: Die
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 32.7 V
на замовлення 167 шт:
термін постачання 21-31 дні (днів)
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1N5918UR-1/TR 1N5913BUR-1-1N5956BUR-1.pdf
1N5918UR-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
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1N5918UR-1/TR 1N5913BUR-1-1N5956BUR-1.pdf
1N5918UR-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Cut Tape (CT)
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1N5918BUR-1/TR 1N5913BUR-1-1N5956BUR-1.pdf
1N5918BUR-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 5.1V 1.25W DO213AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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1N5918BUR-1/TR 1N5913BUR-1-1N5956BUR-1.pdf
1N5918BUR-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 5.1V 1.25W DO213AB
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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1N5930BUR-1/TR 1N5913BUR-1-1N5956BUR-1.pdf
1N5930BUR-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 16V 1.25W DO213AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
на замовлення 233 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
233+297.39 грн
Мінімальне замовлення: 233
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1N5930BUR-1/TR 1N5913BUR-1-1N5956BUR-1.pdf
1N5930BUR-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 16V 1.25W DO213AB
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
на замовлення 233 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+320.02 грн
100+286.37 грн
Мінімальне замовлення: 2
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1N4762AUR/TR 1N4728UR-1N4764AUR.pdf
1N4762AUR/TR
Виробник: Microchip Technology
Description: DIODE ZENER 82V 1W DO213AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 62.2 V
на замовлення 272 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
272+231.32 грн
Мінімальне замовлення: 272
В кошику  од. на суму  грн.
1N4762AUR/TR 1N4728UR-1N4764AUR.pdf
1N4762AUR/TR
Виробник: Microchip Technology
Description: DIODE ZENER 82V 1W DO213AB
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 62.2 V
на замовлення 272 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+272.96 грн
Мінімальне замовлення: 2
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1N4762UR-1/TR 1N4728UR-1N4764AUR.pdf
1N4762UR-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 82V 1W DO213AB
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 62.2 V
на замовлення 272 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
272+312.68 грн
Мінімальне замовлення: 272
В кошику  од. на суму  грн.
1N4762UR-1/TR 1N4728UR-1N4764AUR.pdf
1N4762UR-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 82V 1W DO213AB
Tolerance: ±10%
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 62.2 V
на замовлення 272 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+368.79 грн
В кошику  од. на суму  грн.
MIC2950-05BZ mic2950.pdf
MIC2950-05BZ
Виробник: Microchip Technology
Description: IC REG LIN POS ADJ 150MA TO92-3
Packaging: Tube
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Adjustable (Fixed)
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 30V
Number of Regulators: 1
Supplier Device Package: TO-92-3
Voltage - Output (Max): 29V
Voltage - Output (Min/Fixed): 1.24V (5V)
Control Features: Enable
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 8 mA
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AT89C51CC01UA-RLTUM description doc4129.pdf
AT89C51CC01UA-RLTUM
Виробник: Microchip Technology
Description: IC MCU 8BIT 32KB FLASH 44VQFP
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1.25K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 80C51
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 44-VQFP (10x10)
Number of I/O: 34
DigiKey Programmable: Verified
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AT89C51CC01CA-RLTUM doc4129.pdf
AT89C51CC01CA-RLTUM
Виробник: Microchip Technology
Description: IC MCU 8BIT 32KB FLASH 44VQFP
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1.25K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 80C51
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 44-VQFP (10x10)
Number of I/O: 34
DigiKey Programmable: Verified
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AT89C51CC01UA-RLRUM doc4129.pdf
AT89C51CC01UA-RLRUM
Виробник: Microchip Technology
Description: IC MCU 8BIT 32KB FLASH 44VQFP
Packaging: Tape & Reel (TR)
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1.25K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 80C51
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 44-VQFP (10x10)
Number of I/O: 34
DigiKey Programmable: Not Verified
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JAN1N972B-1
JAN1N972B-1
Виробник: Microchip Technology
Description: ZENER DIODE
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TA)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 21 V
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JAN1N972B-1/TR
JAN1N972B-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TA)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 21 V
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M1.5KE22A RF01008_rE.pdf
Виробник: Microchip Technology
Description: TVS DIODE 18.8VWM 30.6VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 49A
Voltage - Reverse Standoff (Typ): 18.8V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20.9V
Voltage - Clamping (Max) @ Ipp: 30.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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JANTXV1N972B-1 125314-lds-0287-datasheet
JANTXV1N972B-1
Виробник: Microchip Technology
Description: DIODE ZENER 30V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 23 V
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JANTXV1N972B-1/TR
JANTXV1N972B-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 23 V
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JAN1N972C-1 125314-lds-0287-datasheet
JAN1N972C-1
Виробник: Microchip Technology
Description: DIODE ZENER 30V 500MW DO35
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 23 V
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JAN1N972BUR-1 125313-lds-0287-1-datasheet
JAN1N972BUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 30V 500MW DO213AA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 23 V
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JAN1N972C-1/TR
JAN1N972C-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 23 V
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JAN1N972BUR-1/TR
JAN1N972BUR-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 23 V
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JAN1N972D-1 125314-lds-0287-datasheet
JAN1N972D-1
Виробник: Microchip Technology
Description: DIODE ZENER 30V 500MW DO35
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 23 V
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1N5223BUR-1/TR 1N5221BUR-1%20thru%201N5281BUR-1.pdf
1N5223BUR-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 2.7V 500MW DO213AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
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1N5223BUR-1/TR 1N5221BUR-1%20thru%201N5281BUR-1.pdf
1N5223BUR-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 2.7V 500MW DO213AA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
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1N5299-1/TR 8970-lds-0159-pdf.pdf
1N5299-1/TR
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 1.32MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.32mA
Voltage - Limiting (Max): 1.45V
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JANTX1N5299-1/TR
JANTX1N5299-1/TR
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 1.32MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Grade: Military
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.32mA
Voltage - Limiting (Max): 1.45V
Qualification: MIL-PRF-19500/463
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GC6002-350A/TR
Виробник: Microchip Technology
Description: SI NOISE NON HERMETIC EPSM SMT
Packaging: Tray
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 1pF @ 6V, 1MHz
Voltage - Peak Reverse (Max): 14V
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GC4494-00
Виробник: Microchip Technology
Description: SI PIN NON HERMETIC CHIP
Packaging: Tray
Package / Case: Die
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 1.3pF @ 50V, 1MHz
Resistance @ If, F: 350mOhm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 750V
Supplier Device Package: Chip
Current - Max: 50 mA
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GC4215-150B
Виробник: Microchip Technology
Description: SI PIN NON HERMETIC EPSM SMT
Packaging: Tape & Reel (TR)
Package / Case: Die
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 0.5pF @ 10V, 1MHz
Resistance @ If, F: 350mOhm @ 20mA, 1GHz
Voltage - Peak Reverse (Max): 100V
Supplier Device Package: Chip
Current - Max: 10 mA
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GC6002-350A
Виробник: Microchip Technology
Description: SI NOISE NON HERMETIC EPSM SMT
Packaging: Tape & Reel (TR)
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 1pF @ 6V, 1MHz
Voltage - Peak Reverse (Max): 14V
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GC4494-171
GC4494-171
Виробник: Microchip Technology
Description: SI PIN HERMETIC PILL
Packaging: Bag
Package / Case: SQ-MELF
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 1.3pF @ 50V, 1MHz
Resistance @ If, F: 350mOhm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 750V
Current - Max: 50 mA
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GC4215-00
Виробник: Microchip Technology
Description: SI PIN NON HERMETIC CHIP
Packaging: Tray
Package / Case: Die
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 0.5pF @ 10V, 1MHz
Resistance @ If, F: 350mOhm @ 20mA, 1GHz
Voltage - Peak Reverse (Max): 100V
Supplier Device Package: Chip
Current - Max: 10 mA
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GC4215-154-2
Виробник: Microchip Technology
Description: SI PIN NON HERMETIC EPSM SMT
Packaging: Tape & Reel (TR)
Package / Case: Die
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 0.5pF @ 10V, 1MHz
Resistance @ If, F: 350mOhm @ 20mA, 1GHz
Voltage - Peak Reverse (Max): 100V
Supplier Device Package: Chip
Current - Max: 10 mA
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GC4215-154-2/TR
Виробник: Microchip Technology
Description: SI PIN NON HERMETIC EPSM SMT
Packaging: Tray
Package / Case: Die
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 0.5pF @ 10V, 1MHz
Resistance @ If, F: 350mOhm @ 20mA, 1GHz
Voltage - Peak Reverse (Max): 100V
Supplier Device Package: Chip
Current - Max: 10 mA
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GC4494-01
Виробник: Microchip Technology
Description: SI PIN NON HERMETIC CHIP W LEAD
Packaging: Tray
Package / Case: Die
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 1.3pF @ 50V, 1MHz
Resistance @ If, F: 350mOhm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 750V
Supplier Device Package: Chip
Current - Max: 50 mA
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KV2101-00
Виробник: Microchip Technology
Description: SI TVAR NON HERMETIC CHIP
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 2.3pF @ 20V, 1MHz
Q @ Vr, F: 350 @ 3V, 50MHz
Capacitance Ratio Condition: C3/C20
Supplier Device Package: Chip
Voltage - Peak Reverse (Max): 22 V
Capacitance Ratio: 5.4
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DSC2010FI2-B0009 DSC2010FI2-B0009.pdf
DSC2010FI2-B0009
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 14SMD
Packaging: Tube
Package / Case: 14-VFQFN Exposed Pad
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.6V
Height: 0.035" (0.90mm)
Current - Supply (Max): 35mA
Frequency - Output 1: 45.1584MHz, 49.152MHz
Base Resonator: MEMS
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DSC2010FI2-B0014 DSC2010FI2-B0014.pdf
DSC2010FI2-B0014
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 14SMD
Packaging: Tube
Package / Case: 14-VFQFN Exposed Pad
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.6V
Height: 0.035" (0.90mm)
Current - Supply (Max): 35mA
Frequency - Output 1: 26.973MHz, 27MHz
Frequency - Output 2: 27MHz
Base Resonator: MEMS
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DSC2010FM2-A0001 DSC2010FM2-A0001.pdf
DSC2010FM2-A0001
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 14SMD
Packaging: Tube
Package / Case: 14-VFQFN Exposed Pad
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Enable/Disable
Frequency - Max: 148.5MHz
Type: Clock Generator
Operating Temperature: -55°C ~ 125°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.6V
Height: 0.035" (0.90mm)
Current - Supply (Max): 35mA
Ratio - Input:Output: 0:1
Differential - Input:Output: No/No
Supplier Device Package: 14-QFN (3.2x2.5)
PLL: Yes
Divider/Multiplier: Yes/No
Frequency - Output 1: 24MHz, 27MHz, 74.25MHz, 148.5MHz
Number of Circuits: 1
Base Resonator: MEMS
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DSC2010FM2-B0006 DSC2010FM2-B0006.pdf
DSC2010FM2-B0006
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 14SMD
Packaging: Tube
Package / Case: 14-VFQFN Exposed Pad
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -55°C ~ 125°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.6V
Height: 0.035" (0.90mm)
Current - Supply (Max): 35mA
Frequency - Output 1: 24MHz, 27MHz, 74.25MHz, 148.5MHz
Base Resonator: MEMS
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ATTINY261-20SU description Atmel-2588-8-bit-AVR-Microcontrollers-tinyAVR-ATtiny261-ATtiny461-ATtiny861_Datasheet.pdf
ATTINY261-20SU
Виробник: Microchip Technology
Description: IC MCU 8BIT 2KB FLASH 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 2KB (1K x 16)
RAM Size: 128 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128 x 8
Core Processor: AVR
Data Converters: A/D 11x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: USI
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 20-SOIC
Number of I/O: 16
DigiKey Programmable: Not Verified
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JANTXV1N5530DUR-1 1N5518BUR-1_1N5546BUR-1.pdf
JANTXV1N5530DUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 10V 500MW DO213AA
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.1 V
Qualification: MIL-PRF-19500/437
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CD4114 8362-cd4099-cd4135-datasheet
CD4114
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: Die
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 15.2 V
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CD4150 8364-cd4148-914-3600-4150-datasheet
CD4150
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 200MA DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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CD4153 8364-cd4148-914-3600-4150-datasheet
CD4153
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 20MA DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 20mA
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 20 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
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