Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (358948) > Сторінка 1770 з 5983
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||
|---|---|---|---|---|---|---|---|---|---|
| VC-709-121-66M6670000_SNPB | Microchip Technology |
 Description: VC-709-121-66M6670000_SNPBPackaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||
 |
OS81216AF-B2B-010300-VAO | Microchip Technology |
Description: OS81216 NETWORK INTERFACE CTLR Packaging: Tray Package / Case: 48-VFQFN Exposed Pad Function: Controller Interface: GPIO, I²C, SMBus, SPI, USB Operating Temperature: -40°C ~ 125°C Voltage - Supply: 1.8V, 3.3V Protocol: USB Standards: USB 2.0 Supplier Device Package: 48-QFN (7x7) DigiKey Programmable: Not Verified Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
OS81216AFR-B2B-010300-VAO | Microchip Technology |
Description: OS81216 NETWORK INTERFACE CTLR Packaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Function: Controller Interface: GPIO, I²C, SMBus, SPI, USB Operating Temperature: -40°C ~ 125°C Voltage - Supply: 1.8V, 3.3V Protocol: USB Standards: USB 2.0 Supplier Device Package: 48-QFN (7x7) DigiKey Programmable: Not Verified Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||
| 2N4116 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-210AA, TO-59-4, Stud Mounting Type: Stud Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 200µA, 2mA Supplier Device Package: TO-59 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 37 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| 2N6182 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-210AA, TO-59-4, Stud Mounting Type: Stud Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 200µA, 2mA Supplier Device Package: TO-59 Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 60 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| 2N6189 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-210AA, TO-59-4, Stud Mounting Type: Stud Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100µA, 2mA Supplier Device Package: TO-59 Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 60 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| 2N6188 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-210AA, TO-59-4, Stud Mounting Type: Stud Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100µA, 2mA Supplier Device Package: TO-59 Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 60 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| 2N5284 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-210AA, TO-59-4, Stud Mounting Type: Stud Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2.5mA, 5mA Supplier Device Package: TO-59 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 50 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| 2N6184 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-210AA, TO-59-4, Stud Mounting Type: Stud Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 200µA, 2mA Supplier Device Package: TO-59 Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 60 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| 2N5285 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-210AA, TO-59-4, Stud Mounting Type: Stud Mount Transistor Type: PNP Supplier Device Package: TO-59 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 50 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| 2N6183 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-210AA, TO-59-4, Stud Mounting Type: Stud Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 200µA, 2mA Supplier Device Package: TO-59 Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 60 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| 2N5074 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-210AA, TO-59-4, Stud Mounting Type: Stud Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 300µA, 500µA Supplier Device Package: TO-59 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 200 V Power - Max: 40 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| 2N5076 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-210AA, TO-59-4, Stud Mounting Type: Stud Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 300µA, 500µA Supplier Device Package: TO-59 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 40 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| 2N5075 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-210AA, TO-59-4, Stud Mounting Type: Stud Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 300µA, 500µA Supplier Device Package: TO-59 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 200 V Power - Max: 40 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| 2N6185 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-210AA, TO-59-4, Stud Mounting Type: Stud Mount Transistor Type: PNP Supplier Device Package: TO-59 Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 60 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| 2N5287 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-210AA, TO-59-4, Stud Mounting Type: Stud Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 5mA Supplier Device Package: TO-59 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 50 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| 2N6186 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-210AA, TO-59-4, Stud Mounting Type: Stud Mount Transistor Type: PNP Supplier Device Package: TO-59 Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 60 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| 2N5730 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-210AA, TO-59-4, Stud Mounting Type: Stud Mount Transistor Type: NPN Supplier Device Package: TO-59 Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 45 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| 2N5658 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-210AA, TO-59-4, Stud Mounting Type: Stud Mount Transistor Type: PNP Supplier Device Package: TO-59 Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 30 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| 2N6187 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-210AA, TO-59-4, Stud Mounting Type: Stud Mount Transistor Type: PNP Supplier Device Package: TO-59 Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 60 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| 2N5004 | Microchip Technology |
Description: NPN SILICON TRANSISTOR Packaging: Bulk Package / Case: TO-210AA, TO-59-4, Stud Mounting Type: Stud Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Supplier Device Package: TO-59 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 2 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| 2N4999 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-210AA, TO-59-4, Stud Mounting Type: Stud Mount Transistor Type: PNP Supplier Device Package: TO-59 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 35 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| 2N4998 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-210AA, TO-59-4, Stud Mounting Type: Stud Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 850mV @ 200µA, 1mA Supplier Device Package: TO-59 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 35 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| JANTXV2N5002 | Microchip Technology |
Description: TRANS NPN 80V 5A TO59 Packaging: Bulk Package / Case: TO-210AA, TO-59-4, Stud Mounting Type: Stud Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V Supplier Device Package: TO-59 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 2 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| JAN2N5002 | Microchip Technology |
Description: TRANS NPN 80V 5A TO59 Packaging: Bulk Package / Case: TO-210AA, TO-59-4, Stud Mounting Type: Stud Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V Supplier Device Package: TO-59 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 2 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||
 |
DSC1203CE2-167M7722 | Microchip Technology |
Description: MEMS OSC XO 167.7722MHZ LVDS SMD Packaging: Strip Package / Case: 6-VDFN Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Output: LVDS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: -20°C ~ 70°C Frequency Stability: ±25ppm Voltage - Supply: 2.25V ~ 3.63V Current - Supply (Max): 32mA (Typ) Supplier Device Package: 6-VDFN (3.2x2.5) Height - Seated (Max): 0.035" (0.90mm) Frequency: 167.7722 MHz Base Resonator: MEMS |
товару немає в наявності |
В кошику од. на суму грн. | ||||
 |
JAN1N4968C | Microchip Technology |
Description: DIODE ZENER 27V 5W E-AXIAL Packaging: Bulk Tolerance: ±2% Package / Case: E, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 6 Ohms Supplier Device Package: E, Axial Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 20.6 V Grade: Military Qualification: MIL-PRF-19500/356 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
| JANTX1N4967C | Microchip Technology |
Description: DIODE ZENER 24V 5W E AXIAL Packaging: Bulk Tolerance: ±2% Package / Case: E, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 5 Ohms Supplier Device Package: E, Axial Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 18.2 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||
|
|
JAN1N4967D | Microchip Technology |
Description: DIODE ZENER 24V 5W E AXIAL Packaging: Bulk Tolerance: ±1% Package / Case: E, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 5 Ohms Supplier Device Package: E, Axial Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 18.2 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
 |
JAN1N4967CUS | Microchip Technology |
Description: DIODE ZENER 24V 5W D5B Packaging: Bulk Tolerance: ±2% Package / Case: SQ-MELF, E Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 5 Ohms Supplier Device Package: D-5B Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 18.2 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
JAN1N4967DUS | Microchip Technology |
Description: DIODE ZENER 24V 5W D5B Packaging: Bulk Tolerance: ±1% Package / Case: SQ-MELF, E Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 5 Ohms Supplier Device Package: D-5B Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 18.2 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
JANTX1N4967DUS | Microchip Technology |
Description: DIODE ZENER 24V 5W D5B Packaging: Bulk Tolerance: ±1% Package / Case: SQ-MELF, E Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 5 Ohms Supplier Device Package: D-5B Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 18.2 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
 |
ATMEGA324PA-MCH | Microchip Technology |
Description: IC MCU 8BIT 32KB FLASH 44QFN Packaging: Tray Package / Case: 44-VQFN Dual Rows, Exposed Pad Mounting Type: Surface Mount Speed: 20MHz Program Memory Size: 32KB (16K x 16) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 1K x 8 Core Processor: AVR Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 44-QFN (5x5) Number of I/O: 32 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||
 |
ATQT600 | Microchip Technology |
Description: QT600 EVAL KIT ATTINY88 QTOUCH Packaging: Box Interface: USB Contents: Board(s), Cable(s) Sensor Type: Touch, Capacitive Utilized IC / Part: ATtiny88, ATmega324PA, ATxmega128A1 Supplied Contents: Board(s), Cable(s) Embedded: Yes, Other |
товару немає в наявності |
В кошику од. на суму грн. | ||||
 |
ATMEGA324PA-PN | Microchip Technology |
Description: IC MCU 8BIT 32KB FLASH 40DIP Packaging: Tube Package / Case: 40-DIP (0.600", 15.24mm) Mounting Type: Through Hole Speed: 20MHz Program Memory Size: 32KB (16K x 16) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 1K x 8 Core Processor: AVR Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 40-PDIP Number of I/O: 32 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||
 |
ATMEGA324P-A15AZ | Microchip Technology |
Description: IC MCU 8BIT 32KB FLASH 44TQFP Packaging: Tape & Reel (TR) Package / Case: 44-TQFP Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 32KB (16K x 16) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 1K x 8 Core Processor: AVR Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: I2C, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 44-TQFP (10x10) Number of I/O: 32 DigiKey Programmable: Verified Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
 |
ATMEGA324P-A15MZ | Microchip Technology |
Description: IC MCU 8BIT 32KB FLASH 44VQFN Packaging: Tape & Reel (TR) Package / Case: 44-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 32KB (16K x 16) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 1K x 8 Core Processor: AVR Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: I2C, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 44-VQFN (7x7) Number of I/O: 32 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
~~2.jpg "1N2492") |
1N2492 | Microchip Technology |
Description: DIODE GEN PURP 100V 6A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: DO-4 (DO-203AA) Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
1N2494 | Microchip Technology |
Description: DIODE GEN PURP 300V 6A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: DO-4 (DO-203AA) Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Current - Reverse Leakage @ Vr: 10 µA @ 300 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
1N2493 | Microchip Technology |
Description: DIODE GEN PURP 200V 6A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: DO-4 (DO-203AA) Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
1N2491 | Microchip Technology |
Description: DIODE GEN PURP 50V 6A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: DO-4 (DO-203AA) Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
1N2495 | Microchip Technology |
Description: DIODE GEN PURP 400V 6A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: DO-4 (DO-203AA) Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
1N2496 | Microchip Technology |
Description: DIODE GEN PURP 500V 6A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: DO-4 (DO-203AA) Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 500 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Current - Reverse Leakage @ Vr: 10 µA @ 500 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
1N2497 | Microchip Technology |
Description: DIODE GEN PURP 600V 6A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: DO-4 (DO-203AA) Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
| 1N249B | Microchip Technology |
Description: DIODE GEN PURP 100V 20A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 µs Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| 1N249A | Microchip Technology |
Description: DIODE GEN PURP 100V 40A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 40A Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| 1N249C | Microchip Technology |
Description: DIODE GEN PURP 100V 20A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 µs Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| 1N249 | Microchip Technology |
Description: DIODE GEN PURP 100V 10A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 µs Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||
 |
CD5367B | Microchip Technology |
Description: VOLTAGE REGULATOR Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 43 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: Die Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 32.7 V |
на замовлення 167 шт: термін постачання 21-31 дні (днів) |
|
||||
|
|
CD5367B | Microchip Technology |
Description: VOLTAGE REGULATOR Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 43 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: Die Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 32.7 V |
на замовлення 167 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||
 |
1N5918UR-1/TR | Microchip Technology |
Description: VOLTAGE REGULATOR Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
1N5918UR-1/TR | Microchip Technology |
Description: VOLTAGE REGULATOR Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
1N5918BUR-1/TR | Microchip Technology |
Description: DIODE ZENER 5.1V 1.25W DO213AB Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 4 Ohms Supplier Device Package: DO-213AB (MELF, LL41) Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 2 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
1N5918BUR-1/TR | Microchip Technology |
Description: DIODE ZENER 5.1V 1.25W DO213AB Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 4 Ohms Supplier Device Package: DO-213AB (MELF, LL41) Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 2 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
1N5930BUR-1/TR | Microchip Technology |
Description: DIODE ZENER 16V 1.25W DO213AB Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-213AB (MELF, LL41) Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V |
на замовлення 233 шт: термін постачання 21-31 дні (днів) |
|
||||
|
|
1N5930BUR-1/TR | Microchip Technology |
Description: DIODE ZENER 16V 1.25W DO213AB Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-213AB (MELF, LL41) Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V |
на замовлення 233 шт: термін постачання 21-31 дні (днів) |
|
||||
|
|
1N4762AUR/TR | Microchip Technology |
Description: DIODE ZENER 82V 1W DO213AB Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 82 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-213AB (MELF, LL41) Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 62.2 V |
на замовлення 272 шт: термін постачання 21-31 дні (днів) |
|
||||
|
|
1N4762AUR/TR | Microchip Technology |
Description: DIODE ZENER 82V 1W DO213AB Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 82 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-213AB (MELF, LL41) Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 62.2 V |
на замовлення 272 шт: термін постачання 21-31 дні (днів) |
|
||||
|
|
1N4762UR-1/TR | Microchip Technology |
Description: DIODE ZENER 82V 1W DO213AB Packaging: Tape & Reel (TR) Tolerance: ±10% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 82 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-213AB (MELF, LL41) Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 62.2 V |
на замовлення 272 шт: термін постачання 21-31 дні (днів) |
|
||||
|
|
1N4762UR-1/TR | Microchip Technology |
Description: DIODE ZENER 82V 1W DO213AB Packaging: Cut Tape (CT) Tolerance: ±10% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 82 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-213AB (MELF, LL41) Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 62.2 V |
на замовлення 272 шт: термін постачання 21-31 дні (днів) |
|
| OS81216AF-B2B-010300-VAO |
Виробник: Microchip Technology
Description: OS81216 NETWORK INTERFACE CTLR
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Function: Controller
Interface: GPIO, I²C, SMBus, SPI, USB
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.8V, 3.3V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 48-QFN (7x7)
DigiKey Programmable: Not Verified
Grade: Automotive
Description: OS81216 NETWORK INTERFACE CTLR
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Function: Controller
Interface: GPIO, I²C, SMBus, SPI, USB
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.8V, 3.3V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 48-QFN (7x7)
DigiKey Programmable: Not Verified
Grade: Automotive
товару немає в наявності
В кошику
од. на суму грн.
| OS81216AFR-B2B-010300-VAO |
Виробник: Microchip Technology
Description: OS81216 NETWORK INTERFACE CTLR
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Function: Controller
Interface: GPIO, I²C, SMBus, SPI, USB
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.8V, 3.3V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 48-QFN (7x7)
DigiKey Programmable: Not Verified
Grade: Automotive
Description: OS81216 NETWORK INTERFACE CTLR
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Function: Controller
Interface: GPIO, I²C, SMBus, SPI, USB
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.8V, 3.3V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 48-QFN (7x7)
DigiKey Programmable: Not Verified
Grade: Automotive
товару немає в наявності
В кошику
од. на суму грн.
| 2N4116 |
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200µA, 2mA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 37 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200µA, 2mA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 37 W
товару немає в наявності
В кошику
од. на суму грн.
| 2N6182 |
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 200µA, 2mA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 60 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 200µA, 2mA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 60 W
товару немає в наявності
В кошику
од. на суму грн.
| 2N6189 |
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100µA, 2mA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 60 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100µA, 2mA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 60 W
товару немає в наявності
В кошику
од. на суму грн.
| 2N6188 |
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100µA, 2mA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 60 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100µA, 2mA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 60 W
товару немає в наявності
В кошику
од. на суму грн.
| 2N5284 |
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2.5mA, 5mA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 50 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2.5mA, 5mA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 50 W
товару немає в наявності
В кошику
од. на суму грн.
| 2N6184 |
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 200µA, 2mA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 60 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 200µA, 2mA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 60 W
товару немає в наявності
В кошику
од. на суму грн.
| 2N5285 |
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 50 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 50 W
товару немає в наявності
В кошику
од. на суму грн.
| 2N6183 |
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 200µA, 2mA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 60 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 200µA, 2mA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 60 W
товару немає в наявності
В кошику
од. на суму грн.
| 2N5074 |
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300µA, 500µA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 40 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300µA, 500µA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 40 W
товару немає в наявності
В кошику
од. на суму грн.
| 2N5076 |
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300µA, 500µA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 40 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300µA, 500µA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 40 W
товару немає в наявності
В кошику
од. на суму грн.
| 2N5075 |
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300µA, 500µA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 40 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300µA, 500µA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 40 W
товару немає в наявності
В кошику
од. на суму грн.
| 2N6185 |
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 60 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 60 W
товару немає в наявності
В кошику
од. на суму грн.
| 2N5287 |
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 5mA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 50 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 5mA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 50 W
товару немає в наявності
В кошику
од. на суму грн.
| 2N6186 |
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 60 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 60 W
товару немає в наявності
В кошику
од. на суму грн.
| 2N5730 |
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 45 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 45 W
товару немає в наявності
В кошику
од. на суму грн.
| 2N5658 |
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
товару немає в наявності
В кошику
од. на суму грн.
| 2N6187 |
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 60 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 60 W
товару немає в наявності
В кошику
од. на суму грн.
| 2N5004 |
|
Виробник: Microchip Technology
Description: NPN SILICON TRANSISTOR
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Description: NPN SILICON TRANSISTOR
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
товару немає в наявності
В кошику
од. на суму грн.
| 2N4999 |
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 35 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 35 W
товару немає в наявності
В кошику
од. на суму грн.
| 2N4998 |
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 850mV @ 200µA, 1mA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 35 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 850mV @ 200µA, 1mA
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 35 W
товару немає в наявності
В кошику
од. на суму грн.
| JANTXV2N5002 |
|
Виробник: Microchip Technology
Description: TRANS NPN 80V 5A TO59
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Description: TRANS NPN 80V 5A TO59
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
товару немає в наявності
В кошику
од. на суму грн.
| JAN2N5002 |
|
Виробник: Microchip Technology
Description: TRANS NPN 80V 5A TO59
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Description: TRANS NPN 80V 5A TO59
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
товару немає в наявності
В кошику
од. на суму грн.
| DSC1203CE2-167M7722 |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 167.7722MHZ LVDS SMD
Packaging: Strip
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA (Typ)
Supplier Device Package: 6-VDFN (3.2x2.5)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 167.7722 MHz
Base Resonator: MEMS
Description: MEMS OSC XO 167.7722MHZ LVDS SMD
Packaging: Strip
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA (Typ)
Supplier Device Package: 6-VDFN (3.2x2.5)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 167.7722 MHz
Base Resonator: MEMS
товару немає в наявності
В кошику
од. на суму грн.
| JAN1N4968C |
|
Виробник: Microchip Technology
Description: DIODE ZENER 27V 5W E-AXIAL
Packaging: Bulk
Tolerance: ±2%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: E, Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 20.6 V
Grade: Military
Qualification: MIL-PRF-19500/356
Description: DIODE ZENER 27V 5W E-AXIAL
Packaging: Bulk
Tolerance: ±2%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: E, Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 20.6 V
Grade: Military
Qualification: MIL-PRF-19500/356
товару немає в наявності
В кошику
од. на суму грн.
| JANTX1N4967C |
|
Виробник: Microchip Technology
Description: DIODE ZENER 24V 5W E AXIAL
Packaging: Bulk
Tolerance: ±2%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: E, Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 18.2 V
Description: DIODE ZENER 24V 5W E AXIAL
Packaging: Bulk
Tolerance: ±2%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: E, Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 18.2 V
товару немає в наявності
В кошику
од. на суму грн.
| JAN1N4967D |
|
Виробник: Microchip Technology
Description: DIODE ZENER 24V 5W E AXIAL
Packaging: Bulk
Tolerance: ±1%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: E, Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 18.2 V
Description: DIODE ZENER 24V 5W E AXIAL
Packaging: Bulk
Tolerance: ±1%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: E, Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 18.2 V
товару немає в наявності
В кошику
од. на суму грн.
| JAN1N4967CUS |
|
Виробник: Microchip Technology
Description: DIODE ZENER 24V 5W D5B
Packaging: Bulk
Tolerance: ±2%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: D-5B
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 18.2 V
Description: DIODE ZENER 24V 5W D5B
Packaging: Bulk
Tolerance: ±2%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: D-5B
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 18.2 V
товару немає в наявності
В кошику
од. на суму грн.
| JAN1N4967DUS |
|
Виробник: Microchip Technology
Description: DIODE ZENER 24V 5W D5B
Packaging: Bulk
Tolerance: ±1%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: D-5B
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 18.2 V
Description: DIODE ZENER 24V 5W D5B
Packaging: Bulk
Tolerance: ±1%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: D-5B
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 18.2 V
товару немає в наявності
В кошику
од. на суму грн.
| JANTX1N4967DUS |
|
Виробник: Microchip Technology
Description: DIODE ZENER 24V 5W D5B
Packaging: Bulk
Tolerance: ±1%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: D-5B
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 18.2 V
Description: DIODE ZENER 24V 5W D5B
Packaging: Bulk
Tolerance: ±1%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: D-5B
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 18.2 V
товару немає в наявності
В кошику
од. на суму грн.
| ATMEGA324PA-MCH |
|
Виробник: Microchip Technology
Description: IC MCU 8BIT 32KB FLASH 44QFN
Packaging: Tray
Package / Case: 44-VQFN Dual Rows, Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 32KB (16K x 16)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 44-QFN (5x5)
Number of I/O: 32
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 32KB FLASH 44QFN
Packaging: Tray
Package / Case: 44-VQFN Dual Rows, Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 32KB (16K x 16)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 44-QFN (5x5)
Number of I/O: 32
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| ATQT600 |
|
Виробник: Microchip Technology
Description: QT600 EVAL KIT ATTINY88 QTOUCH
Packaging: Box
Interface: USB
Contents: Board(s), Cable(s)
Sensor Type: Touch, Capacitive
Utilized IC / Part: ATtiny88, ATmega324PA, ATxmega128A1
Supplied Contents: Board(s), Cable(s)
Embedded: Yes, Other
Description: QT600 EVAL KIT ATTINY88 QTOUCH
Packaging: Box
Interface: USB
Contents: Board(s), Cable(s)
Sensor Type: Touch, Capacitive
Utilized IC / Part: ATtiny88, ATmega324PA, ATxmega128A1
Supplied Contents: Board(s), Cable(s)
Embedded: Yes, Other
товару немає в наявності
В кошику
од. на суму грн.
| ATMEGA324PA-PN |
|
Виробник: Microchip Technology
Description: IC MCU 8BIT 32KB FLASH 40DIP
Packaging: Tube
Package / Case: 40-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Speed: 20MHz
Program Memory Size: 32KB (16K x 16)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 40-PDIP
Number of I/O: 32
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 32KB FLASH 40DIP
Packaging: Tube
Package / Case: 40-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Speed: 20MHz
Program Memory Size: 32KB (16K x 16)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 40-PDIP
Number of I/O: 32
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| ATMEGA324P-A15AZ |
|
Виробник: Microchip Technology
Description: IC MCU 8BIT 32KB FLASH 44TQFP
Packaging: Tape & Reel (TR)
Package / Case: 44-TQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 32KB (16K x 16)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 32
DigiKey Programmable: Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC MCU 8BIT 32KB FLASH 44TQFP
Packaging: Tape & Reel (TR)
Package / Case: 44-TQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 32KB (16K x 16)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 32
DigiKey Programmable: Verified
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| ATMEGA324P-A15MZ |
|
Виробник: Microchip Technology
Description: IC MCU 8BIT 32KB FLASH 44VQFN
Packaging: Tape & Reel (TR)
Package / Case: 44-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 32KB (16K x 16)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 44-VQFN (7x7)
Number of I/O: 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC MCU 8BIT 32KB FLASH 44VQFN
Packaging: Tape & Reel (TR)
Package / Case: 44-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 32KB (16K x 16)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 44-VQFN (7x7)
Number of I/O: 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| 1N2492 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP 100V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N2494 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 300V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Description: DIODE GEN PURP 300V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N2493 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N2491 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP 50V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N2495 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N2496 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 500V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Description: DIODE GEN PURP 500V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N2497 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N249B |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 20A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP 100V 20A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N249A |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP 100V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N249C |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 20A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP 100V 20A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N249 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 10A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP 100V 10A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| CD5367B |
|
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: Die
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 32.7 V
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: Die
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 32.7 V
на замовлення 167 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 396.95 грн |
| 100+ | 355.28 грн |
| CD5367B |
|
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: Die
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 32.7 V
Description: VOLTAGE REGULATOR
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: Die
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 32.7 V
на замовлення 167 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| 1N5918BUR-1/TR |
|
Виробник: Microchip Technology
Description: DIODE ZENER 5.1V 1.25W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Description: DIODE ZENER 5.1V 1.25W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N5918BUR-1/TR |
|
Виробник: Microchip Technology
Description: DIODE ZENER 5.1V 1.25W DO213AB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Description: DIODE ZENER 5.1V 1.25W DO213AB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N5930BUR-1/TR |
|
Виробник: Microchip Technology
Description: DIODE ZENER 16V 1.25W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
Description: DIODE ZENER 16V 1.25W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
на замовлення 233 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 233+ | 275.92 грн |
| 1N5930BUR-1/TR |
|
Виробник: Microchip Technology
Description: DIODE ZENER 16V 1.25W DO213AB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
Description: DIODE ZENER 16V 1.25W DO213AB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
на замовлення 233 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 296.92 грн |
| 100+ | 265.70 грн |
| 1N4762AUR/TR |
|
Виробник: Microchip Technology
Description: DIODE ZENER 82V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 62.2 V
Description: DIODE ZENER 82V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 62.2 V
на замовлення 272 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 272+ | 229.20 грн |
| 1N4762AUR/TR |
|
Виробник: Microchip Technology
Description: DIODE ZENER 82V 1W DO213AB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 62.2 V
Description: DIODE ZENER 82V 1W DO213AB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 62.2 V
на замовлення 272 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 246.90 грн |
| 100+ | 220.72 грн |
| 1N4762UR-1/TR |
|
Виробник: Microchip Technology
Description: DIODE ZENER 82V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 62.2 V
Description: DIODE ZENER 82V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 62.2 V
на замовлення 272 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 272+ | 229.20 грн |
| 1N4762UR-1/TR |
|
Виробник: Microchip Technology
Description: DIODE ZENER 82V 1W DO213AB
Packaging: Cut Tape (CT)
Tolerance: ±10%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 62.2 V
Description: DIODE ZENER 82V 1W DO213AB
Packaging: Cut Tape (CT)
Tolerance: ±10%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 62.2 V
на замовлення 272 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 246.90 грн |
| 100+ | 220.72 грн |