Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (358949) > Сторінка 1825 з 5983
| Фото | Назва | Виробник | Інформація |
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1N6080/TR | Microchip Technology |
 Description: DIODE STANDARD 100V 2A AXIALPackaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 155°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
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| JAN1N6081/TR | Microchip Technology |
Description: DIODE STANDARD 150V 2A G AXIAL Packaging: Tape & Reel (TR) Package / Case: G, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: G, Axial Operating Temperature - Junction: -65°C ~ 155°C Grade: Military Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V Qualification: MIL-PRF-19500/503 |
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| JAN1N6081 | Microchip Technology |
Description: DIODE STANDARD 150V 2A G AXIAL Packaging: Bulk Package / Case: G, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: G, Axial Operating Temperature - Junction: -65°C ~ 155°C Grade: Military Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V Qualification: MIL-PRF-19500/503 |
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| JANTXV1N6081/TR | Microchip Technology |
Description: DIODE STANDARD 150V 2A G AXIAL Packaging: Tape & Reel (TR) Package / Case: G, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: G, Axial Operating Temperature - Junction: -65°C ~ 155°C Grade: Military Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V Qualification: MIL-PRF-19500/503 |
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1N6081/TR | Microchip Technology |
Description: DIODE STANDARD 150V 2A AXIAL Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 155°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V |
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1N6081US/TR | Microchip Technology |
Description: DIODE STANDARD 150V 2A G SQMELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: G, SQ-MELF Operating Temperature - Junction: -65°C ~ 155°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V |
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| JANTXV1N6081 | Microchip Technology |
Description: DIODE STANDARD 150V 2A G AXIAL Packaging: Bulk Package / Case: G, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: G, Axial Operating Temperature - Junction: -65°C ~ 155°C Grade: Military Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V Qualification: MIL-PRF-19500/503 |
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APT10090BFLLG | Microchip Technology |
Description: MOSFET N-CH 1000V 12A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 6A, 10V Power Dissipation (Max): 298W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 25 V |
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LX3302AQPW-TR-EASY | Microchip Technology |
Description: IC INDUCTIVE POSITION SENSOR Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Interface: Analog, PWM Operating Temperature: -40°C ~ 150°C Voltage - Supply: 4V ~ 6V Program Memory Type: ROM (12kB) Applications: Inductive Sensor Interface Core Processor: 32-Bit RISC Supplier Device Package: 14-TSSOP Number of I/O: 4 DigiKey Programmable: Not Verified |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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LX3302AQPW-TR-EASY | Microchip Technology |
Description: IC INDUCTIVE POSITION SENSOR Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Interface: Analog, PWM Operating Temperature: -40°C ~ 150°C Voltage - Supply: 4V ~ 6V Program Memory Type: ROM (12kB) Applications: Inductive Sensor Interface Core Processor: 32-Bit RISC Supplier Device Package: 14-TSSOP Number of I/O: 4 DigiKey Programmable: Not Verified |
на замовлення 6412 шт: термін постачання 21-31 дні (днів) |
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VXM7-1363-57M1425000TR | Microchip Technology |
Description: VXM7-1363-57M1425000TR Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Type: MHz Crystal Frequency Tolerance: ±20ppm Operating Mode: Fundamental Height - Seated (Max): 0.031" (0.80mm) ESR (Equivalent Series Resistance): 40 Ohms Frequency: 57.1425 MHz |
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MIC4427CN | Microchip Technology |
Description: IC GATE DRVR LOW-SIDE 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: 0°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 18V Input Type: Non-Inverting Supplier Device Package: 8-PDIP Rise / Fall Time (Typ): 20ns, 29ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: MOSFET (N-Channel, P-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 1.5A, 1.5A DigiKey Programmable: Not Verified |
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| GC6001-42 | Microchip Technology |
Description: SI NOISE HERMETIC STUD Packaging: Tray Package / Case: Stud Diode Type: Standard - Single Operating Temperature: -55°C ~ 150°C Capacitance @ Vr, F: 0.5pF @ 6V, 1MHz Voltage - Peak Reverse (Max): 10V |
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| GC6002-150A | Microchip Technology |
Description: SI NOISE NON HERMETIC EPSM SMT Packaging: Tray Package / Case: Die Diode Type: PIN - Single Operating Temperature: -55°C ~ 150°C Capacitance @ Vr, F: 1pF @ 6V, 1MHz Voltage - Peak Reverse (Max): 14V Supplier Device Package: Chip |
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| GC6002-150A/TR | Microchip Technology |
Description: SI NOISE NON HERMETIC EPSM SMT Packaging: Tray Package / Case: Die Diode Type: PIN - Single Operating Temperature: -55°C ~ 150°C Capacitance @ Vr, F: 1pF @ 6V, 1MHz Voltage - Peak Reverse (Max): 14V Supplier Device Package: Chip |
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| GC6002-00 | Microchip Technology |
Description: SI NOISE NON HERMETIC CHIP Packaging: Tray Package / Case: Die Diode Type: PIN - Single Operating Temperature: -55°C ~ 150°C Capacitance @ Vr, F: 1pF @ 6V, 1MHz Voltage - Peak Reverse (Max): 14V Supplier Device Package: Chip |
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| GC6003-150A | Microchip Technology |
Description: SI NOISE NON HERMETIC EPSM SMT Packaging: Tape & Reel (TR) Package / Case: Die Diode Type: Standard - Single Operating Temperature: -55°C ~ 150°C Capacitance @ Vr, F: 1.5pF @ 6V, 1MHz Voltage - Peak Reverse (Max): 18V Supplier Device Package: Chip |
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| GC6001-150A | Microchip Technology |
Description: SI NOISE NON HERMETIC EPSM SMT Packaging: Tray Package / Case: Die Diode Type: Standard - Single Operating Temperature: -55°C ~ 150°C Capacitance @ Vr, F: 0.5pF @ 6V, 1MHz Voltage - Peak Reverse (Max): 10V Supplier Device Package: Chip |
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| GC6001-00 | Microchip Technology |
Description: SI NOISE NON HERMETIC CHIP Packaging: Tray Package / Case: Die Diode Type: Standard - Single Operating Temperature: -55°C ~ 150°C Capacitance @ Vr, F: 0.5pF @ 6V, 1MHz Voltage - Peak Reverse (Max): 10V Supplier Device Package: Chip |
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| GC6002-450A | Microchip Technology |
Description: SI NOISE NON HERMETIC EPSM SMT Packaging: Tray Package / Case: Die Diode Type: PIN - Single Operating Temperature: -55°C ~ 150°C Capacitance @ Vr, F: 1pF @ 6V, 1MHz Voltage - Peak Reverse (Max): 14V Supplier Device Package: Chip |
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| GC6003-150A/TR | Microchip Technology |
Description: SI NOISE NON HERMETIC EPSM SMT Packaging: Tray Package / Case: Die Diode Type: Standard - Single Operating Temperature: -55°C ~ 150°C Capacitance @ Vr, F: 1.5pF @ 6V, 1MHz Voltage - Peak Reverse (Max): 18V Supplier Device Package: Chip |
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| GC6001-30 | Microchip Technology |
Description: SI NOISE HERMETIC PILL Packaging: Tray Package / Case: Stud Diode Type: Standard - Single Operating Temperature: -55°C ~ 150°C Capacitance @ Vr, F: 0.5pF @ 6V, 1MHz Voltage - Peak Reverse (Max): 10V |
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| GC6002-450A/TR | Microchip Technology |
Description: SI NOISE NON HERMETIC EPSM SMT Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Diode Type: PIN - Single Operating Temperature: -55°C ~ 150°C Capacitance @ Vr, F: 1pF @ 6V, 1MHz Voltage - Peak Reverse (Max): 14V |
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CD4115 | Microchip Technology |
Description: VOLTAGE REGULATOR Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 150 Ohms Supplier Device Package: Die Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 10 nA @ 16.72 V |
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CD5334B | Microchip Technology |
Description: VOLTAGE REGULATOR Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 3.6 V Impedance (Max) (Zzt): 2.5 Ohms Supplier Device Package: Die Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 150 µA @ 1 V |
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CD5354B | Microchip Technology |
Description: VOLTAGE REGULATOR Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 17 V Impedance (Max) (Zzt): 2.5 Ohms Supplier Device Package: Die Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 12.9 V |
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UPTB10e3/TR13 | Microchip Technology |
Description: TVS DIODE 10VWM 18VC POWERMITE 1 Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 8.33A Voltage - Reverse Standoff (Typ): 10V Supplier Device Package: Powermite 1 (DO216-AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 11V Voltage - Clamping (Max) @ Ipp: 18V Power - Peak Pulse: 1000W (1kW) Power Line Protection: No |
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UPTB10e3/TR13 | Microchip Technology |
Description: TVS DIODE 10VWM 18VC POWERMITE 1 Packaging: Cut Tape (CT) Package / Case: DO-216AA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 8.33A Voltage - Reverse Standoff (Typ): 10V Supplier Device Package: Powermite 1 (DO216-AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 11V Voltage - Clamping (Max) @ Ipp: 18V Power - Peak Pulse: 1000W (1kW) Power Line Protection: No |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||
| MV30018-150A/TR | Microchip Technology |
Description: GAAS TVAR NON HERMETIC EPSM SMT Packaging: Tray Package / Case: Die Mounting Type: Surface Mount Diode Type: Single Operating Temperature: -55°C ~ 175°C Capacitance @ Vr, F: 3pF @ 4V, 1MHz Q @ Vr, F: 2500 @ 4V, 50MHz Capacitance Ratio Condition: C2/C20 Supplier Device Package: Chip Voltage - Peak Reverse (Max): 22 V Capacitance Ratio: 6 |
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| MV30018-150A | Microchip Technology |
Description: GAAS TVAR NON HERMETIC EPSM SMT Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Diode Type: Single Operating Temperature: -55°C ~ 175°C Capacitance @ Vr, F: 3pF @ 4V, 1MHz Q @ Vr, F: 2500 @ 4V, 50MHz Capacitance Ratio Condition: C2/C20 Supplier Device Package: Chip Voltage - Peak Reverse (Max): 22 V Capacitance Ratio: 6 |
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| MV30016-150A | Microchip Technology |
Description: GAAS TVAR NON HERMETIC EPSM SMT Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Diode Type: Single Operating Temperature: -55°C ~ 175°C Capacitance @ Vr, F: 2.2pF @ 4V, 1MHz Q @ Vr, F: 3000 @ 4V, 50MHz Capacitance Ratio Condition: C2/C20 Supplier Device Package: Chip Voltage - Peak Reverse (Max): 22 V Capacitance Ratio: 5.6 |
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| MV30011-P00 | Microchip Technology |
Description: GAAS TVAR NON HERMETIC CHIP Packaging: Tray Package / Case: Die Mounting Type: Surface Mount Diode Type: Single Operating Temperature: -55°C ~ 175°C Capacitance @ Vr, F: 0.6pF @ 4V, 1MHz Q @ Vr, F: 4000 @ 4V, 50MHz Capacitance Ratio Condition: C2/C20 Supplier Device Package: Chip Voltage - Peak Reverse (Max): 22 V Capacitance Ratio: 3.9 |
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| MV30016-150A/TR | Microchip Technology |
Description: GAAS TVAR NON HERMETIC EPSM SMT Packaging: Tray Package / Case: Die Mounting Type: Surface Mount Diode Type: Single Operating Temperature: -55°C ~ 175°C Capacitance @ Vr, F: 2.2pF @ 4V, 1MHz Q @ Vr, F: 3000 @ 4V, 50MHz Capacitance Ratio Condition: C2/C20 Supplier Device Package: Chip Voltage - Peak Reverse (Max): 22 V Capacitance Ratio: 5.6 |
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| MV30019-150A | Microchip Technology |
Description: GAAS TVAR NON HERMETIC EPSM SMT Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Diode Type: Single Operating Temperature: -55°C ~ 175°C Capacitance @ Vr, F: 3.6pF @ 4V, 1MHz Q @ Vr, F: 2000 @ 4V, 50MHz Capacitance Ratio Condition: C2/C20 Supplier Device Package: Chip Voltage - Peak Reverse (Max): 22 V Capacitance Ratio: 6.1 |
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| MLCE100Ae3 | Microchip Technology |
Description: TVS DIODE 100VWM 162VC CASE-1 Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 90pF @ 1MHz Current - Peak Pulse (10/1000µs): 9.3A Voltage - Reverse Standoff (Typ): 100V Supplier Device Package: CASE-1 Unidirectional Channels: 1 Voltage - Breakdown (Min): 111V Voltage - Clamping (Max) @ Ipp: 162V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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| MLCE130A | Microchip Technology |
Description: TVS DIODE 130VWM 209VC CASE-1 Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 90pF @ 1MHz Current - Peak Pulse (10/1000µs): 7.2A Voltage - Reverse Standoff (Typ): 130V Supplier Device Package: CASE-1 Unidirectional Channels: 1 Voltage - Breakdown (Min): 144V Voltage - Clamping (Max) @ Ipp: 209V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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| MLCE13Ae3 | Microchip Technology |
Description: TVS DIODE 13VWM 21.5VC CASE-1 Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 100pF @ 1MHz Current - Peak Pulse (10/1000µs): 70A Voltage - Reverse Standoff (Typ): 13V Supplier Device Package: CASE-1 Unidirectional Channels: 1 Voltage - Breakdown (Min): 14.4V Voltage - Clamping (Max) @ Ipp: 21.5V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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| MLCE14Ae3 | Microchip Technology |
Description: TVS DIODE 14VWM 23.2VC CASE-1 Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 100pF @ 1MHz Current - Peak Pulse (10/1000µs): 65A Voltage - Reverse Standoff (Typ): 14V Supplier Device Package: CASE-1 Unidirectional Channels: 1 Voltage - Breakdown (Min): 15.6V Voltage - Clamping (Max) @ Ipp: 23.2V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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| MLCE150Ae3 | Microchip Technology |
Description: TVS DIODE 150VWM 243VC CASE-1 Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 90pF @ 1MHz Current - Peak Pulse (10/1000µs): 6.2A Voltage - Reverse Standoff (Typ): 150V Supplier Device Package: CASE-1 Unidirectional Channels: 1 Voltage - Breakdown (Min): 167V Voltage - Clamping (Max) @ Ipp: 243V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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| MLCE15A | Microchip Technology |
Description: TVS DIODE 15VWM 24.4VC CASE-1 Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 100pF @ 1MHz Current - Peak Pulse (10/1000µs): 61A Voltage - Reverse Standoff (Typ): 15V Supplier Device Package: CASE-1 Unidirectional Channels: 1 Voltage - Breakdown (Min): 16.7V Voltage - Clamping (Max) @ Ipp: 24.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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| MLCE15Ae3 | Microchip Technology |
Description: TVS DIODE 15VWM 24.4VC CASE-1 Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 100pF @ 1MHz Current - Peak Pulse (10/1000µs): 61A Voltage - Reverse Standoff (Typ): 15V Supplier Device Package: CASE-1 Unidirectional Channels: 1 Voltage - Breakdown (Min): 16.7V Voltage - Clamping (Max) @ Ipp: 24.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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| MLCE160A | Microchip Technology |
Description: TVS DIODE 160VWM 259VC CASE-1 Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 90pF @ 1MHz Current - Peak Pulse (10/1000µs): 5.8A Voltage - Reverse Standoff (Typ): 160V Supplier Device Package: CASE-1 Unidirectional Channels: 1 Voltage - Breakdown (Min): 178V Voltage - Clamping (Max) @ Ipp: 259V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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В кошику од. на суму грн. | |||||||
| MLCE160Ae3 | Microchip Technology |
Description: TVS DIODE 160VWM 259VC CASE-1 Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 90pF @ 1MHz Current - Peak Pulse (10/1000µs): 5.8A Voltage - Reverse Standoff (Typ): 160V Supplier Device Package: CASE-1 Unidirectional Channels: 1 Voltage - Breakdown (Min): 178V Voltage - Clamping (Max) @ Ipp: 259V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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В кошику од. на суму грн. | |||||||
| MLCE16A | Microchip Technology |
Description: TVS DIODE 16VWM 26VC CASE-1 Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 100pF @ 1MHz Current - Peak Pulse (10/1000µs): 57A Voltage - Reverse Standoff (Typ): 16V Supplier Device Package: CASE-1 Unidirectional Channels: 1 Voltage - Breakdown (Min): 17.8V Voltage - Clamping (Max) @ Ipp: 26V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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В кошику од. на суму грн. | |||||||
| MLCE16Ae3 | Microchip Technology |
Description: TVS DIODE 16VWM 26VC CASE-1 Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 100pF @ 1MHz Current - Peak Pulse (10/1000µs): 57A Voltage - Reverse Standoff (Typ): 16V Supplier Device Package: CASE-1 Unidirectional Channels: 1 Voltage - Breakdown (Min): 17.8V Voltage - Clamping (Max) @ Ipp: 26V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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В кошику од. на суму грн. | |||||||
| MLCE18A | Microchip Technology |
Description: TVS DIODE 18VWM 29.2VC CASE-1 Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 100pF @ 1MHz Current - Peak Pulse (10/1000µs): 51A Voltage - Reverse Standoff (Typ): 18V Supplier Device Package: CASE-1 Unidirectional Channels: 1 Voltage - Breakdown (Min): 20V Voltage - Clamping (Max) @ Ipp: 29.2V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| MLCE18Ae3 | Microchip Technology |
Description: TVS DIODE 18VWM 29.2VC CASE-1 Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 100pF @ 1MHz Current - Peak Pulse (10/1000µs): 51A Voltage - Reverse Standoff (Typ): 18V Supplier Device Package: CASE-1 Unidirectional Channels: 1 Voltage - Breakdown (Min): 20V Voltage - Clamping (Max) @ Ipp: 29.2V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
.jpg "MASMLJ51A") |
MASMLJ51A | Microchip Technology |
Description: TVS DIODE 51VWM 82.4VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 36.4A Voltage - Reverse Standoff (Typ): 51V Supplier Device Package: DO-214AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 56.7V Voltage - Clamping (Max) @ Ipp: 82.4V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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В кошику од. на суму грн. | ||||||
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MASMLJ54Ae3 | Microchip Technology |
Description: TVS DIODE 54VWM 87.1VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 34.4A Voltage - Reverse Standoff (Typ): 54V Supplier Device Package: DO-214AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 60V Voltage - Clamping (Max) @ Ipp: 87.1V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MASMLJ58Ae3 | Microchip Technology |
Description: TVS DIODE 58VWM 93.6VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 32A Voltage - Reverse Standoff (Typ): 58V Supplier Device Package: DO-214AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 64.4V Voltage - Clamping (Max) @ Ipp: 93.6V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MASMLJ6.0Ae3 | Microchip Technology |
Description: TVS DIODE 6VWM 10.3VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 291.3A Voltage - Reverse Standoff (Typ): 6V Supplier Device Package: DO-214AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.67V Voltage - Clamping (Max) @ Ipp: 10.3V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MASMLJ6.5Ae3 | Microchip Technology |
Description: TVS DIODE 6.5VWM 11.2VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 267.9A Voltage - Reverse Standoff (Typ): 6.5V Supplier Device Package: DO-214AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.22V Voltage - Clamping (Max) @ Ipp: 11.2V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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В кошику од. на суму грн. | ||||||
 |
EV76T90A | Microchip Technology |
Description: ATMXT144UD-SPI-PCB DEV BOARD Packaging: Bulk Function: Touch Screen Controller Type: Interface Contents: Board(s) Utilized IC / Part: MXT144UD Supplied Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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AT32UC3A1256AU-AUR | Microchip Technology |
Description: IC MCU 32BIT 256KB FLASH 100TQFP Packaging: Tape & Reel (TR) Package / Case: 100-TQFP Mounting Type: Surface Mount Speed: 66MHz Program Memory Size: 256KB (256K x 8) RAM Size: 64K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: AVR Data Converters: A/D 8x10b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Connectivity: Ethernet, I2C, SPI, SSC, UART/USART, USB OTG Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 100-TQFP (14x14) Number of I/O: 69 DigiKey Programmable: Not Verified |
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В кошику од. на суму грн. | ||||||
 |
VMK3-9003-32K7680000TR | Microchip Technology |
Description: VMK3-9003-32K7680000TR Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Size / Dimension: 0.126" L x 0.059" W (3.20mm x 1.50mm) Mounting Type: Surface Mount Type: kHz Crystal (Tuning Fork) Frequency Tolerance: ±20ppm Operating Mode: Fundamental Height - Seated (Max): 0.035" (0.90mm) ESR (Equivalent Series Resistance): 70 kOhms Frequency: 32.768 kHz |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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VMK3-9003-32K7680000TR | Microchip Technology |
Description: VMK3-9003-32K7680000TR Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Size / Dimension: 0.126" L x 0.059" W (3.20mm x 1.50mm) Mounting Type: Surface Mount Type: kHz Crystal (Tuning Fork) Frequency Tolerance: ±20ppm Operating Mode: Fundamental Height - Seated (Max): 0.035" (0.90mm) ESR (Equivalent Series Resistance): 70 kOhms Frequency: 32.768 kHz |
на замовлення 5970 шт: термін постачання 21-31 дні (днів) |
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MCP47CVB02-E/MF | Microchip Technology |
Description: IC DAC 8BIT V-OUT 10DFN Packaging: Tube Package / Case: 10-VFDFN Exposed Pad Output Type: Voltage - Buffered Mounting Type: Surface Mount Number of Bits: 8 Data Interface: I2C Reference Type: External, Internal Operating Temperature: -40°C ~ 125°C Voltage - Supply, Analog: 1.8V ~ 5.5V Voltage - Supply, Digital: 1.8V ~ 5.5V Settling Time: 16µs (Typ) Supplier Device Package: 10-DFN (3x3) Architecture: Current Source Number of D/A Converters: 2 INL/DNL (LSB): ±0.1, ±0.1 Differential Output: No DigiKey Programmable: Not Verified |
на замовлення 938 шт: термін постачання 21-31 дні (днів) |
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CD5338B | Microchip Technology |
Description: DIODE ZENER 5.1V 5W DIE Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 1.5 Ohms Supplier Device Package: Die Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 1 V |
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В кошику од. на суму грн. | ||||||
 |
2N4240 | Microchip Technology |
Description: TRANS NPN 500V 2A TO-66 Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 75mA, 750mA Current - Collector Cutoff (Max): 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 750mA, 10V Supplier Device Package: TO-66 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 500 V Power - Max: 35 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
MXSMBG160Ae3 | Microchip Technology |
Description: TVS DIODE 160VWM 259VC SMBG Packaging: Bulk Package / Case: DO-215AA, SMB Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2.3A Voltage - Reverse Standoff (Typ): 160V Supplier Device Package: SMBG (DO-215AA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 178V Voltage - Clamping (Max) @ Ipp: 259V Power - Peak Pulse: 600W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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В кошику од. на суму грн. |
| 1N6080/TR |
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Виробник: Microchip Technology
Description: DIODE STANDARD 100V 2A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE STANDARD 100V 2A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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В кошику
од. на суму грн.
| JAN1N6081/TR |
Виробник: Microchip Technology
Description: DIODE STANDARD 150V 2A G AXIAL
Packaging: Tape & Reel (TR)
Package / Case: G, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: G, Axial
Operating Temperature - Junction: -65°C ~ 155°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: MIL-PRF-19500/503
Description: DIODE STANDARD 150V 2A G AXIAL
Packaging: Tape & Reel (TR)
Package / Case: G, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: G, Axial
Operating Temperature - Junction: -65°C ~ 155°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: MIL-PRF-19500/503
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В кошику
од. на суму грн.
| JAN1N6081 |
|
Виробник: Microchip Technology
Description: DIODE STANDARD 150V 2A G AXIAL
Packaging: Bulk
Package / Case: G, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: G, Axial
Operating Temperature - Junction: -65°C ~ 155°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: MIL-PRF-19500/503
Description: DIODE STANDARD 150V 2A G AXIAL
Packaging: Bulk
Package / Case: G, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: G, Axial
Operating Temperature - Junction: -65°C ~ 155°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: MIL-PRF-19500/503
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В кошику
од. на суму грн.
| JANTXV1N6081/TR |
Виробник: Microchip Technology
Description: DIODE STANDARD 150V 2A G AXIAL
Packaging: Tape & Reel (TR)
Package / Case: G, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: G, Axial
Operating Temperature - Junction: -65°C ~ 155°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/503
Description: DIODE STANDARD 150V 2A G AXIAL
Packaging: Tape & Reel (TR)
Package / Case: G, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: G, Axial
Operating Temperature - Junction: -65°C ~ 155°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/503
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В кошику
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| 1N6081/TR |
|
Виробник: Microchip Technology
Description: DIODE STANDARD 150V 2A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Description: DIODE STANDARD 150V 2A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
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| 1N6081US/TR |
Виробник: Microchip Technology
Description: DIODE STANDARD 150V 2A G SQMELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: G, SQ-MELF
Operating Temperature - Junction: -65°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Description: DIODE STANDARD 150V 2A G SQMELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: G, SQ-MELF
Operating Temperature - Junction: -65°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
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В кошику
од. на суму грн.
| JANTXV1N6081 |
|
Виробник: Microchip Technology
Description: DIODE STANDARD 150V 2A G AXIAL
Packaging: Bulk
Package / Case: G, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: G, Axial
Operating Temperature - Junction: -65°C ~ 155°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/503
Description: DIODE STANDARD 150V 2A G AXIAL
Packaging: Bulk
Package / Case: G, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: G, Axial
Operating Temperature - Junction: -65°C ~ 155°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/503
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В кошику
од. на суму грн.
| APT10090BFLLG |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 6A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 25 V
Description: MOSFET N-CH 1000V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 6A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 25 V
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| LX3302AQPW-TR-EASY |
Виробник: Microchip Technology
Description: IC INDUCTIVE POSITION SENSOR
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: Analog, PWM
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4V ~ 6V
Program Memory Type: ROM (12kB)
Applications: Inductive Sensor Interface
Core Processor: 32-Bit RISC
Supplier Device Package: 14-TSSOP
Number of I/O: 4
DigiKey Programmable: Not Verified
Description: IC INDUCTIVE POSITION SENSOR
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: Analog, PWM
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4V ~ 6V
Program Memory Type: ROM (12kB)
Applications: Inductive Sensor Interface
Core Processor: 32-Bit RISC
Supplier Device Package: 14-TSSOP
Number of I/O: 4
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 183.32 грн |
| LX3302AQPW-TR-EASY |
Виробник: Microchip Technology
Description: IC INDUCTIVE POSITION SENSOR
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: Analog, PWM
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4V ~ 6V
Program Memory Type: ROM (12kB)
Applications: Inductive Sensor Interface
Core Processor: 32-Bit RISC
Supplier Device Package: 14-TSSOP
Number of I/O: 4
DigiKey Programmable: Not Verified
Description: IC INDUCTIVE POSITION SENSOR
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: Analog, PWM
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4V ~ 6V
Program Memory Type: ROM (12kB)
Applications: Inductive Sensor Interface
Core Processor: 32-Bit RISC
Supplier Device Package: 14-TSSOP
Number of I/O: 4
DigiKey Programmable: Not Verified
на замовлення 6412 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 227.85 грн |
| 25+ | 182.71 грн |
| 100+ | 176.53 грн |
| VXM7-1363-57M1425000TR |
Виробник: Microchip Technology
Description: VXM7-1363-57M1425000TR
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.80mm)
ESR (Equivalent Series Resistance): 40 Ohms
Frequency: 57.1425 MHz
Description: VXM7-1363-57M1425000TR
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.80mm)
ESR (Equivalent Series Resistance): 40 Ohms
Frequency: 57.1425 MHz
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| MIC4427CN |
|
Виробник: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 20ns, 29ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 20ns, 29ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
DigiKey Programmable: Not Verified
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| GC6001-42 |
Виробник: Microchip Technology
Description: SI NOISE HERMETIC STUD
Packaging: Tray
Package / Case: Stud
Diode Type: Standard - Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 0.5pF @ 6V, 1MHz
Voltage - Peak Reverse (Max): 10V
Description: SI NOISE HERMETIC STUD
Packaging: Tray
Package / Case: Stud
Diode Type: Standard - Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 0.5pF @ 6V, 1MHz
Voltage - Peak Reverse (Max): 10V
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| GC6002-150A |
Виробник: Microchip Technology
Description: SI NOISE NON HERMETIC EPSM SMT
Packaging: Tray
Package / Case: Die
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 1pF @ 6V, 1MHz
Voltage - Peak Reverse (Max): 14V
Supplier Device Package: Chip
Description: SI NOISE NON HERMETIC EPSM SMT
Packaging: Tray
Package / Case: Die
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 1pF @ 6V, 1MHz
Voltage - Peak Reverse (Max): 14V
Supplier Device Package: Chip
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| GC6002-150A/TR |
Виробник: Microchip Technology
Description: SI NOISE NON HERMETIC EPSM SMT
Packaging: Tray
Package / Case: Die
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 1pF @ 6V, 1MHz
Voltage - Peak Reverse (Max): 14V
Supplier Device Package: Chip
Description: SI NOISE NON HERMETIC EPSM SMT
Packaging: Tray
Package / Case: Die
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 1pF @ 6V, 1MHz
Voltage - Peak Reverse (Max): 14V
Supplier Device Package: Chip
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| GC6002-00 |
Виробник: Microchip Technology
Description: SI NOISE NON HERMETIC CHIP
Packaging: Tray
Package / Case: Die
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 1pF @ 6V, 1MHz
Voltage - Peak Reverse (Max): 14V
Supplier Device Package: Chip
Description: SI NOISE NON HERMETIC CHIP
Packaging: Tray
Package / Case: Die
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 1pF @ 6V, 1MHz
Voltage - Peak Reverse (Max): 14V
Supplier Device Package: Chip
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| GC6003-150A |
Виробник: Microchip Technology
Description: SI NOISE NON HERMETIC EPSM SMT
Packaging: Tape & Reel (TR)
Package / Case: Die
Diode Type: Standard - Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 1.5pF @ 6V, 1MHz
Voltage - Peak Reverse (Max): 18V
Supplier Device Package: Chip
Description: SI NOISE NON HERMETIC EPSM SMT
Packaging: Tape & Reel (TR)
Package / Case: Die
Diode Type: Standard - Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 1.5pF @ 6V, 1MHz
Voltage - Peak Reverse (Max): 18V
Supplier Device Package: Chip
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| GC6001-150A |
Виробник: Microchip Technology
Description: SI NOISE NON HERMETIC EPSM SMT
Packaging: Tray
Package / Case: Die
Diode Type: Standard - Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 0.5pF @ 6V, 1MHz
Voltage - Peak Reverse (Max): 10V
Supplier Device Package: Chip
Description: SI NOISE NON HERMETIC EPSM SMT
Packaging: Tray
Package / Case: Die
Diode Type: Standard - Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 0.5pF @ 6V, 1MHz
Voltage - Peak Reverse (Max): 10V
Supplier Device Package: Chip
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| GC6001-00 |
Виробник: Microchip Technology
Description: SI NOISE NON HERMETIC CHIP
Packaging: Tray
Package / Case: Die
Diode Type: Standard - Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 0.5pF @ 6V, 1MHz
Voltage - Peak Reverse (Max): 10V
Supplier Device Package: Chip
Description: SI NOISE NON HERMETIC CHIP
Packaging: Tray
Package / Case: Die
Diode Type: Standard - Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 0.5pF @ 6V, 1MHz
Voltage - Peak Reverse (Max): 10V
Supplier Device Package: Chip
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| GC6002-450A |
Виробник: Microchip Technology
Description: SI NOISE NON HERMETIC EPSM SMT
Packaging: Tray
Package / Case: Die
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 1pF @ 6V, 1MHz
Voltage - Peak Reverse (Max): 14V
Supplier Device Package: Chip
Description: SI NOISE NON HERMETIC EPSM SMT
Packaging: Tray
Package / Case: Die
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 1pF @ 6V, 1MHz
Voltage - Peak Reverse (Max): 14V
Supplier Device Package: Chip
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| GC6003-150A/TR |
Виробник: Microchip Technology
Description: SI NOISE NON HERMETIC EPSM SMT
Packaging: Tray
Package / Case: Die
Diode Type: Standard - Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 1.5pF @ 6V, 1MHz
Voltage - Peak Reverse (Max): 18V
Supplier Device Package: Chip
Description: SI NOISE NON HERMETIC EPSM SMT
Packaging: Tray
Package / Case: Die
Diode Type: Standard - Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 1.5pF @ 6V, 1MHz
Voltage - Peak Reverse (Max): 18V
Supplier Device Package: Chip
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| GC6001-30 |
Виробник: Microchip Technology
Description: SI NOISE HERMETIC PILL
Packaging: Tray
Package / Case: Stud
Diode Type: Standard - Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 0.5pF @ 6V, 1MHz
Voltage - Peak Reverse (Max): 10V
Description: SI NOISE HERMETIC PILL
Packaging: Tray
Package / Case: Stud
Diode Type: Standard - Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 0.5pF @ 6V, 1MHz
Voltage - Peak Reverse (Max): 10V
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| GC6002-450A/TR |
Виробник: Microchip Technology
Description: SI NOISE NON HERMETIC EPSM SMT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 1pF @ 6V, 1MHz
Voltage - Peak Reverse (Max): 14V
Description: SI NOISE NON HERMETIC EPSM SMT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 1pF @ 6V, 1MHz
Voltage - Peak Reverse (Max): 14V
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| CD4115 |
|
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: Die
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 16.72 V
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: Die
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 16.72 V
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| CD5334B |
|
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: Die
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 1 V
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: Die
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 1 V
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| CD5354B |
|
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: Die
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 12.9 V
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: Die
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 12.9 V
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| UPTB10e3/TR13 |
|
Виробник: Microchip Technology
Description: TVS DIODE 10VWM 18VC POWERMITE 1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.33A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: Powermite 1 (DO216-AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11V
Voltage - Clamping (Max) @ Ipp: 18V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Description: TVS DIODE 10VWM 18VC POWERMITE 1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.33A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: Powermite 1 (DO216-AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11V
Voltage - Clamping (Max) @ Ipp: 18V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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| UPTB10e3/TR13 |
|
Виробник: Microchip Technology
Description: TVS DIODE 10VWM 18VC POWERMITE 1
Packaging: Cut Tape (CT)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.33A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: Powermite 1 (DO216-AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11V
Voltage - Clamping (Max) @ Ipp: 18V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Description: TVS DIODE 10VWM 18VC POWERMITE 1
Packaging: Cut Tape (CT)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.33A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: Powermite 1 (DO216-AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11V
Voltage - Clamping (Max) @ Ipp: 18V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
на замовлення 6 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| MV30018-150A/TR |
Виробник: Microchip Technology
Description: GAAS TVAR NON HERMETIC EPSM SMT
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 175°C
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Q @ Vr, F: 2500 @ 4V, 50MHz
Capacitance Ratio Condition: C2/C20
Supplier Device Package: Chip
Voltage - Peak Reverse (Max): 22 V
Capacitance Ratio: 6
Description: GAAS TVAR NON HERMETIC EPSM SMT
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 175°C
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Q @ Vr, F: 2500 @ 4V, 50MHz
Capacitance Ratio Condition: C2/C20
Supplier Device Package: Chip
Voltage - Peak Reverse (Max): 22 V
Capacitance Ratio: 6
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| MV30018-150A |
Виробник: Microchip Technology
Description: GAAS TVAR NON HERMETIC EPSM SMT
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 175°C
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Q @ Vr, F: 2500 @ 4V, 50MHz
Capacitance Ratio Condition: C2/C20
Supplier Device Package: Chip
Voltage - Peak Reverse (Max): 22 V
Capacitance Ratio: 6
Description: GAAS TVAR NON HERMETIC EPSM SMT
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 175°C
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Q @ Vr, F: 2500 @ 4V, 50MHz
Capacitance Ratio Condition: C2/C20
Supplier Device Package: Chip
Voltage - Peak Reverse (Max): 22 V
Capacitance Ratio: 6
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| MV30016-150A |
Виробник: Microchip Technology
Description: GAAS TVAR NON HERMETIC EPSM SMT
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 175°C
Capacitance @ Vr, F: 2.2pF @ 4V, 1MHz
Q @ Vr, F: 3000 @ 4V, 50MHz
Capacitance Ratio Condition: C2/C20
Supplier Device Package: Chip
Voltage - Peak Reverse (Max): 22 V
Capacitance Ratio: 5.6
Description: GAAS TVAR NON HERMETIC EPSM SMT
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 175°C
Capacitance @ Vr, F: 2.2pF @ 4V, 1MHz
Q @ Vr, F: 3000 @ 4V, 50MHz
Capacitance Ratio Condition: C2/C20
Supplier Device Package: Chip
Voltage - Peak Reverse (Max): 22 V
Capacitance Ratio: 5.6
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| MV30011-P00 |
Виробник: Microchip Technology
Description: GAAS TVAR NON HERMETIC CHIP
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 175°C
Capacitance @ Vr, F: 0.6pF @ 4V, 1MHz
Q @ Vr, F: 4000 @ 4V, 50MHz
Capacitance Ratio Condition: C2/C20
Supplier Device Package: Chip
Voltage - Peak Reverse (Max): 22 V
Capacitance Ratio: 3.9
Description: GAAS TVAR NON HERMETIC CHIP
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 175°C
Capacitance @ Vr, F: 0.6pF @ 4V, 1MHz
Q @ Vr, F: 4000 @ 4V, 50MHz
Capacitance Ratio Condition: C2/C20
Supplier Device Package: Chip
Voltage - Peak Reverse (Max): 22 V
Capacitance Ratio: 3.9
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| MV30016-150A/TR |
Виробник: Microchip Technology
Description: GAAS TVAR NON HERMETIC EPSM SMT
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 175°C
Capacitance @ Vr, F: 2.2pF @ 4V, 1MHz
Q @ Vr, F: 3000 @ 4V, 50MHz
Capacitance Ratio Condition: C2/C20
Supplier Device Package: Chip
Voltage - Peak Reverse (Max): 22 V
Capacitance Ratio: 5.6
Description: GAAS TVAR NON HERMETIC EPSM SMT
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 175°C
Capacitance @ Vr, F: 2.2pF @ 4V, 1MHz
Q @ Vr, F: 3000 @ 4V, 50MHz
Capacitance Ratio Condition: C2/C20
Supplier Device Package: Chip
Voltage - Peak Reverse (Max): 22 V
Capacitance Ratio: 5.6
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| MV30019-150A |
Виробник: Microchip Technology
Description: GAAS TVAR NON HERMETIC EPSM SMT
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 175°C
Capacitance @ Vr, F: 3.6pF @ 4V, 1MHz
Q @ Vr, F: 2000 @ 4V, 50MHz
Capacitance Ratio Condition: C2/C20
Supplier Device Package: Chip
Voltage - Peak Reverse (Max): 22 V
Capacitance Ratio: 6.1
Description: GAAS TVAR NON HERMETIC EPSM SMT
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 175°C
Capacitance @ Vr, F: 3.6pF @ 4V, 1MHz
Q @ Vr, F: 2000 @ 4V, 50MHz
Capacitance Ratio Condition: C2/C20
Supplier Device Package: Chip
Voltage - Peak Reverse (Max): 22 V
Capacitance Ratio: 6.1
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| MLCE100Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 100VWM 162VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.3A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 100VWM 162VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.3A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| MLCE130A |
|
Виробник: Microchip Technology
Description: TVS DIODE 130VWM 209VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 130VWM 209VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| MLCE13Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 13VWM 21.5VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 70A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 13VWM 21.5VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 70A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| MLCE14Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 14VWM 23.2VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 65A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 14VWM 23.2VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 65A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| MLCE150Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 150VWM 243VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 150VWM 243VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| MLCE15A |
|
Виробник: Microchip Technology
Description: TVS DIODE 15VWM 24.4VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 61A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 15VWM 24.4VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 61A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| MLCE15Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 15VWM 24.4VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 61A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 15VWM 24.4VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 61A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| MLCE160A |
|
Виробник: Microchip Technology
Description: TVS DIODE 160VWM 259VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.8A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 160VWM 259VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.8A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| MLCE160Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 160VWM 259VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.8A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 160VWM 259VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.8A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| MLCE16A |
|
Виробник: Microchip Technology
Description: TVS DIODE 16VWM 26VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 57A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 16VWM 26VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 57A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| MLCE16Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 16VWM 26VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 57A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 16VWM 26VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 57A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| MLCE18A |
|
Виробник: Microchip Technology
Description: TVS DIODE 18VWM 29.2VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 51A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 18VWM 29.2VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 51A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| MLCE18Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 18VWM 29.2VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 51A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 18VWM 29.2VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 51A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| MASMLJ51A |
|
Виробник: Microchip Technology
Description: TVS DIODE 51VWM 82.4VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36.4A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 51VWM 82.4VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36.4A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| MASMLJ54Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 54VWM 87.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 34.4A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 54VWM 87.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 34.4A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| MASMLJ58Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 58VWM 93.6VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 32A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 58VWM 93.6VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 32A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| MASMLJ6.0Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 6VWM 10.3VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 291.3A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 6VWM 10.3VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 291.3A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| MASMLJ6.5Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 6.5VWM 11.2VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 267.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 6.5VWM 11.2VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 267.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| EV76T90A |
Виробник: Microchip Technology
Description: ATMXT144UD-SPI-PCB DEV BOARD
Packaging: Bulk
Function: Touch Screen Controller
Type: Interface
Contents: Board(s)
Utilized IC / Part: MXT144UD
Supplied Contents: Board(s)
Description: ATMXT144UD-SPI-PCB DEV BOARD
Packaging: Bulk
Function: Touch Screen Controller
Type: Interface
Contents: Board(s)
Utilized IC / Part: MXT144UD
Supplied Contents: Board(s)
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| AT32UC3A1256AU-AUR |
|
Виробник: Microchip Technology
Description: IC MCU 32BIT 256KB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: Ethernet, I2C, SPI, SSC, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 69
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 256KB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: Ethernet, I2C, SPI, SSC, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 69
DigiKey Programmable: Not Verified
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| VMK3-9003-32K7680000TR |
|
Виробник: Microchip Technology
Description: VMK3-9003-32K7680000TR
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Size / Dimension: 0.126" L x 0.059" W (3.20mm x 1.50mm)
Mounting Type: Surface Mount
Type: kHz Crystal (Tuning Fork)
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.035" (0.90mm)
ESR (Equivalent Series Resistance): 70 kOhms
Frequency: 32.768 kHz
Description: VMK3-9003-32K7680000TR
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Size / Dimension: 0.126" L x 0.059" W (3.20mm x 1.50mm)
Mounting Type: Surface Mount
Type: kHz Crystal (Tuning Fork)
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.035" (0.90mm)
ESR (Equivalent Series Resistance): 70 kOhms
Frequency: 32.768 kHz
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 82.01 грн |
| VMK3-9003-32K7680000TR |
|
Виробник: Microchip Technology
Description: VMK3-9003-32K7680000TR
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Size / Dimension: 0.126" L x 0.059" W (3.20mm x 1.50mm)
Mounting Type: Surface Mount
Type: kHz Crystal (Tuning Fork)
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.035" (0.90mm)
ESR (Equivalent Series Resistance): 70 kOhms
Frequency: 32.768 kHz
Description: VMK3-9003-32K7680000TR
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Size / Dimension: 0.126" L x 0.059" W (3.20mm x 1.50mm)
Mounting Type: Surface Mount
Type: kHz Crystal (Tuning Fork)
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.035" (0.90mm)
ESR (Equivalent Series Resistance): 70 kOhms
Frequency: 32.768 kHz
на замовлення 5970 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 100.82 грн |
| 25+ | 96.69 грн |
| MCP47CVB02-E/MF |
|
Виробник: Microchip Technology
Description: IC DAC 8BIT V-OUT 10DFN
Packaging: Tube
Package / Case: 10-VFDFN Exposed Pad
Output Type: Voltage - Buffered
Mounting Type: Surface Mount
Number of Bits: 8
Data Interface: I2C
Reference Type: External, Internal
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Analog: 1.8V ~ 5.5V
Voltage - Supply, Digital: 1.8V ~ 5.5V
Settling Time: 16µs (Typ)
Supplier Device Package: 10-DFN (3x3)
Architecture: Current Source
Number of D/A Converters: 2
INL/DNL (LSB): ±0.1, ±0.1
Differential Output: No
DigiKey Programmable: Not Verified
Description: IC DAC 8BIT V-OUT 10DFN
Packaging: Tube
Package / Case: 10-VFDFN Exposed Pad
Output Type: Voltage - Buffered
Mounting Type: Surface Mount
Number of Bits: 8
Data Interface: I2C
Reference Type: External, Internal
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Analog: 1.8V ~ 5.5V
Voltage - Supply, Digital: 1.8V ~ 5.5V
Settling Time: 16µs (Typ)
Supplier Device Package: 10-DFN (3x3)
Architecture: Current Source
Number of D/A Converters: 2
INL/DNL (LSB): ±0.1, ±0.1
Differential Output: No
DigiKey Programmable: Not Verified
на замовлення 938 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 118.29 грн |
| 25+ | 95.93 грн |
| 100+ | 87.40 грн |
| CD5338B |
|
Виробник: Microchip Technology
Description: DIODE ZENER 5.1V 5W DIE
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 1.5 Ohms
Supplier Device Package: Die
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Description: DIODE ZENER 5.1V 5W DIE
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 1.5 Ohms
Supplier Device Package: Die
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
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| 2N4240 |
|
Виробник: Microchip Technology
Description: TRANS NPN 500V 2A TO-66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 75mA, 750mA
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 750mA, 10V
Supplier Device Package: TO-66
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 35 W
Description: TRANS NPN 500V 2A TO-66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 75mA, 750mA
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 750mA, 10V
Supplier Device Package: TO-66
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 35 W
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| MXSMBG160Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 160VWM 259VC SMBG
Packaging: Bulk
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: SMBG (DO-215AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 160VWM 259VC SMBG
Packaging: Bulk
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: SMBG (DO-215AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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