Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (354031) > Сторінка 1826 з 5901
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DSC6111JI1B-019.2000T | Microchip Technology |
 Description: MEMS OSC., ULTRA LOW POWER, LVCMPackaging: Strip Package / Case: 4-VLGA Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: CMOS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±50ppm Voltage - Supply: 1.71V ~ 3.63V Current - Supply (Max): 3mA (Typ) Height - Seated (Max): 0.035" (0.89mm) Frequency: 19.2 MHz Base Resonator: MEMS |
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DSC6101JI2B-019.2000T | Microchip Technology |
Description: MEMS OSC AUTO LOWPWR -40C-85C Packaging: Strip Package / Case: 4-VLGA Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: CMOS Function: Enable/Disable Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±25ppm Voltage - Supply: 1.71V ~ 3.63V Current - Supply (Max): 3mA (Typ) Height - Seated (Max): 0.035" (0.89mm) Frequency: 19.2 MHz Base Resonator: MEMS |
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DSC6003JI2B-019.2000T | Microchip Technology |
Description: OSC MEMS LOW PWR LVCMOS Packaging: Strip Package / Case: 4-VLGA Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: CMOS Function: Enable/Disable Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±25ppm Voltage - Supply: 1.71V ~ 3.63V Ratings: AEC-Q100 Current - Supply (Max): 1.3mA (Typ) Height - Seated (Max): 0.035" (0.90mm) Frequency: 19.2 MHz Base Resonator: MEMS |
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DSC6011JI2B-019.2000T | Microchip Technology |
Description: MEMS OSC XO LVCMOS SMD Packaging: Strip Package / Case: 4-VLGA Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: CMOS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±25ppm Voltage - Supply: 1.71V ~ 3.63V Ratings: AEC-Q100 Current - Supply (Max): 1.3mA (Typ) Height - Seated (Max): 0.035" (0.90mm) Frequency: 19.2 MHz Base Resonator: MEMS |
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DSC6101MI1B-019.2000T | Microchip Technology |
Description: MEMS OSC AUTO LOWPWR -40C-85C Packaging: Strip Package / Case: 4-VFLGA Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm) Mounting Type: Surface Mount Output: CMOS Function: Enable/Disable Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±50ppm Voltage - Supply: 1.71V ~ 3.63V Current - Supply (Max): 3mA (Typ) Height - Seated (Max): 0.035" (0.89mm) Frequency: 19.2 MHz Base Resonator: MEMS |
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DSC6101MA3B-019.2000T | Microchip Technology |
Description: MEMS OSC 2016 20PPM Packaging: Strip Package / Case: 4-VFLGA Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm) Mounting Type: Surface Mount Output: CMOS Function: Enable/Disable Type: XO (Standard) Operating Temperature: -40°C ~ 125°C Frequency Stability: ±20ppm Voltage - Supply: 1.71V ~ 3.63V Ratings: AEC-Q100 Current - Supply (Max): 3mA (Typ) Height - Seated (Max): 0.035" (0.89mm) Frequency: 19.2 MHz Base Resonator: MEMS |
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DSC6011MI2B-019.2000T | Microchip Technology |
Description: MEMS OSCILLATOR, ULTRA LOW POWER Packaging: Strip Package / Case: 4-VFLGA Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm) Mounting Type: Surface Mount Output: CMOS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±25ppm Voltage - Supply: 1.71V ~ 3.63V Ratings: AEC-Q100 Current - Supply (Max): 1.3mA (Typ) Height - Seated (Max): 0.035" (0.90mm) Frequency: 19.2 MHz Base Resonator: MEMS |
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| CDLL4916A | Microchip Technology |
Description: DIODE ZENER Tolerance: ±5% Packaging: Bulk Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 19.2 V Impedance (Max) (Zzt): 600 Ohms Supplier Device Package: DO-213AA Power - Max: 500 mW Current - Reverse Leakage @ Vr: 15 µA @ 12 V |
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| CDLL4916A/TR | Microchip Technology |
Description: DIODE ZENER TEMP COMPENSATED Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 100°C Voltage - Zener (Nom) (Vz): 19.2 V Impedance (Max) (Zzt): 600 Ohms Supplier Device Package: DO-213AA Power - Max: 500 mW Current - Reverse Leakage @ Vr: 15 µA @ 12 V |
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| CDLL4916 | Microchip Technology |
Description: DIODE ZENER Tolerance: ±5% Packaging: Bulk Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 19.2 V Impedance (Max) (Zzt): 600 Ohms Supplier Device Package: DO-213AA Power - Max: 500 mW Current - Reverse Leakage @ Vr: 15 µA @ 12 V |
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| CDLL4916/TR | Microchip Technology |
Description: DIODE ZENER TEMP COMPENSATED Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 100°C Voltage - Zener (Nom) (Vz): 19.2 V Impedance (Max) (Zzt): 600 Ohms Supplier Device Package: DO-213AA Power - Max: 500 mW Current - Reverse Leakage @ Vr: 15 µA @ 12 V |
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| EV48C78A | Microchip Technology |
Description: EVALUATION BOARD Packaging: Bulk Function: Analog to Digital Converter (ADC) Type: Data Acquisition Contents: Board(s) Utilized IC / Part: MCP3425 |
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| DSC1001DL2-016.3690 | Microchip Technology |
Description: MEMS OSC XO 13.5600MHZ CMOS SMD Packaging: Strip |
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| DSC1001DL2-016.0000 | Microchip Technology |
Description: MEMS OSC XO 13.5000MHZ CMOS SMD Packaging: Strip |
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MIC4467CWM TR | Microchip Technology |
Description: IC GATE DRVR LOW-SIDE 16SOIC Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 18V Input Type: Inverting Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 14ns, 13ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 4 Gate Type: N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 1.2A, 1.2A DigiKey Programmable: Not Verified |
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| DSPIC33AK256MPS208-E/PT | Microchip Technology |
Description: 200 MHZ, 256KB FLASH, FUSA-COMPL Packaging: Tray |
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| DSPIC33AK256MPS208T-I/PT | Microchip Technology |
Description: 200 MHZ, 256KB FLASH, FUSA-COMPL Packaging: Tape & Reel (TR) |
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| DSPIC33AK256MPS208-I/PT | Microchip Technology |
Description: 200 MHZ, 256KB FLASH, FUSA-COMPL Packaging: Tray |
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| DSPIC33AK512MPS208T-I/PT | Microchip Technology |
Description: 200 MHZ, 512KB FLASH, FUSA-COMPL Packaging: Tape & Reel (TR) |
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| DSPIC33AK512MPS208-E/PT | Microchip Technology |
Description: 200 MHZ, 512KB FLASH, FUSA-COMPL Packaging: Tray |
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| DSPIC33AK512MPS208-I/PT | Microchip Technology |
Description: 200 MHZ, 512KB FLASH, FUSA-COMPL Packaging: Tray |
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DSC1001BC1-080.0000T | Microchip Technology |
Description: OSC MEMS AUTO -20C-70C SMD Packaging: Strip Package / Case: 4-VDFN Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm) Mounting Type: Surface Mount Output: CMOS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: 0°C ~ 70°C Frequency Stability: ±50ppm Voltage - Supply: 1.8V ~ 3.3V Current - Supply (Max): 16.6mA Height - Seated (Max): 0.035" (0.90mm) Frequency: 80 MHz Base Resonator: MEMS |
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| M1.5KE7.5A | Microchip Technology |
Description: TVS DIODE 6.4VWM 11.3VC CASE-1 Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 132A Voltage - Reverse Standoff (Typ): 6.4V Supplier Device Package: CASE-1 Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.13V Voltage - Clamping (Max) @ Ipp: 11.3V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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JAN1N4110-1 | Microchip Technology |
Description: DIODE ZENER 16V DO35 Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Military Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 50 nA @ 12.2 V Qualification: MIL-PRF-19500/435 |
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JAN1N4111-1 | Microchip Technology |
Description: DIODE ZENER 17V DO35 Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 17 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Military Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 50 nA @ 13 V Qualification: MIL-PRF-19500/435 |
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| JAN1N4111UR-1 | Microchip Technology |
Description: DIODE ZENER 17V DO213AA Tolerance: ±5% Packaging: Bulk Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 17 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: DO-213AA Grade: Military Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 50 nA @ 13 V Qualification: MIL-PRF-19500/435 |
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A3PE1500-PQG208 | Microchip Technology |
Description: IC FPGA 147 I/O 208QFP Packaging: Tray Package / Case: 208-BFQFP Mounting Type: Surface Mount Number of Gates: 1500000 Operating Temperature: 0°C ~ 85°C (TJ) Voltage - Supply: 1.425V ~ 1.575V Supplier Device Package: 208-PQFP (28x28) Total RAM Bits: 276480 Number of I/O: 147 DigiKey Programmable: Not Verified |
на замовлення 26 шт: термін постачання 21-31 дні (днів) |
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A3PE1500-PQG208I | Microchip Technology |
Description: IC FPGA 147 I/O 208QFP Packaging: Tray Package / Case: 208-BFQFP Mounting Type: Surface Mount Number of Gates: 1500000 Operating Temperature: -40°C ~ 100°C (TJ) Voltage - Supply: 1.425V ~ 1.575V Supplier Device Package: 208-PQFP (28x28) Total RAM Bits: 276480 Number of I/O: 147 DigiKey Programmable: Not Verified |
на замовлення 36 шт: термін постачання 21-31 дні (днів) |
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| CDLL4135E3 | Microchip Technology |
Description: VOLTAGE REGULATOR Tolerance: ±5% Packaging: Bulk Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 100 V Impedance (Max) (Zzt): 1500 Ohms Supplier Device Package: DO-213AA Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 nA @ 76 V |
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| CDLL4135E3/TR | Microchip Technology |
Description: VOLTAGE REGULATOR Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 100 V Impedance (Max) (Zzt): 1500 Ohms Supplier Device Package: DO-213AA Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 nA @ 76 V |
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CDLL4135/TR | Microchip Technology |
Description: VOLTAGE REGULATOR Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 100 V Impedance (Max) (Zzt): 1600 Ohms Supplier Device Package: DO-213AB Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 50 nA @ 76 V |
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| CDLL4135C/TR | Microchip Technology |
Description: VOLTAGE REGULATOR Packaging: Tape & Reel (TR) |
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| CDLL4135D/TR | Microchip Technology |
Description: VOLTAGE REGULATOR Packaging: Tape & Reel (TR) |
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| CDLL4135D-1E3 | Microchip Technology |
Description: VOLTAGE REGULATOR Tolerance: ±1% Packaging: Bulk Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 100 V Impedance (Max) (Zzt): 1500 Ohms Supplier Device Package: DO-213AA Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 nA @ 76 V |
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| CDLL4135D-1E3/TR | Microchip Technology |
Description: VOLTAGE REGULATOR Tolerance: ±1% Packaging: Tape & Reel (TR) Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 100 V Impedance (Max) (Zzt): 1500 Ohms Supplier Device Package: DO-213AA Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 nA @ 76 V |
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MIC4423CWM | Microchip Technology |
Description: IC GATE DRVR LOW-SIDE 16SOIC Packaging: Bulk Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: 0°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 18V Input Type: Inverting Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 28ns, 32ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 3A, 3A DigiKey Programmable: Not Verified |
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TWIZ5200 | Microchip Technology |
Description: BOARD ETH PICTAIL WIZNET W5200 Packaging: Box Function: Ethernet Type: Interface Utilized IC / Part: PICtail™ interface, PICtail Plus™ Supplied Contents: Board(s) Primary Attributes: 10/100 Base-T with RJ-45 Connector |
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AT88RF04C-MVA1 | Microchip Technology |
Description: RFID TAG R/W 13.56MHZ INLAY Packaging: Tape & Reel (TR) Size / Dimension: 0.712" L x 0.338" W (18.10mm x 8.60mm) Style: Inlay Frequency: 13.56MHz Memory Type: Read/Write Operating Temperature: -40°C ~ 85°C Technology: Passive Standards: ISO 14443 Writable Memory: 4kb (User) |
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AT88RF04C-MVA1 | Microchip Technology |
Description: RFID TAG R/W 13.56MHZ INLAY Packaging: Cut Tape (CT) Size / Dimension: 0.712" L x 0.338" W (18.10mm x 8.60mm) Style: Inlay Frequency: 13.56MHz Memory Type: Read/Write Operating Temperature: -40°C ~ 85°C Technology: Passive Standards: ISO 14443 Writable Memory: 4kb (User) |
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ATSAM4LC4AA-AU | Microchip Technology |
Description: IC MCU 32BIT 256KB FLASH 48TQFP Packaging: Tray Package / Case: 48-TQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 256KB (256K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4 Data Converters: A/D 3x12b; D/A 1x10b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.68V ~ 3.6V Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, POR, PWM, WDT Supplier Device Package: 48-TQFP (7x7) Number of I/O: 27 DigiKey Programmable: Not Verified |
на замовлення 120 шт: термін постачання 21-31 дні (днів) |
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ATSAM4LC4AA-AU | Microchip Technology |
Description: IC MCU 32BIT 256KB FLASH 48TQFP Packaging: Tray Package / Case: 48-TQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 256KB (256K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4 Data Converters: A/D 3x12b; D/A 1x10b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.68V ~ 3.6V Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, POR, PWM, WDT Supplier Device Package: 48-TQFP (7x7) Number of I/O: 27 DigiKey Programmable: Not Verified |
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UTR2350 | Microchip Technology |
Description: DIODE GEN PURP 500V 2A B AXIAL Packaging: Bulk Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 350 ns Technology: Standard Capacitance @ Vr, F: 200pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 500 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 500 V |
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UTR2320 | Microchip Technology |
Description: DIODE GEN PURP 200V 2A B AXIAL Packaging: Bulk Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 320pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
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UTR2310 | Microchip Technology |
Description: DIODE GEN PURP 100V 2A B AXIAL Packaging: Bulk Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 400pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
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UTR2305 | Microchip Technology |
Description: DIODE GEN PURP 50V 2A B AXIAL Packaging: Bulk Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 600pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
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DSC1001AL2-125.0000T | Microchip Technology |
Description: MEMS OSC XO 125.0000MHZ CMOS SMD Packaging: Strip Package / Case: 4-VDFN Exposed Pad Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm) Mounting Type: Surface Mount Output: CMOS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: -40°C ~ 105°C Frequency Stability: ±25ppm Voltage - Supply: 1.8V ~ 3.3V Current - Supply (Max): 16.6mA Height - Seated (Max): 0.035" (0.90mm) Frequency: 125 MHz Base Resonator: MEMS |
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MNS2N3501P | Microchip Technology |
Description: TRANS NPN 150V 0.3A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 1 W Qualification: MIL-PRF-19500/366 |
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2N3501e3 | Microchip Technology |
Description: TRANS NPN 150V 0.3A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-39 (TO-205AD) Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 500 mW |
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MNS2N3501UBP | Microchip Technology |
Description: TRANS NPN 150V 0.3A UB Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UB Grade: Military Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 500 mW Qualification: MIL-PRF-19500/366 |
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MNS2N3501UBP/TR | Microchip Technology |
Description: TRANS NPN 150V 0.3A UB Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UB Grade: Military Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 500 mW Qualification: MIL-PRF-19500/366 |
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2N3501UB/TR | Microchip Technology |
Description: TRANS NPN 150V 0.3A UB Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UB Grade: Military Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 500 mW Qualification: MIL-PRF-19500/366 |
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JAN2N3501UB/TR | Microchip Technology |
Description: TRANS NPN 150V 0.3A UB Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UB Grade: Military Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 500 mW Qualification: MIL-PRF-19500/366 |
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JANTX2N3501UB/TR | Microchip Technology |
Description: TRANS NPN 150V 0.3A UB Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UB Grade: Military Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 500 mW Qualification: MIL-PRF-19500/366 |
товар відсутній |
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JANTXV2N3501UB/TR | Microchip Technology |
Description: TRANS NPN 150V 0.3A UB Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UB Grade: Military Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 500 mW Qualification: MIL-PRF-19500/366 |
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JANS2N3501UB | Microchip Technology |
Description: TRANS NPN 150V 0.3A UB Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UB Grade: Military Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 500 mW Qualification: MIL-PRF-19500/366 |
товар відсутній |
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JANS2N3501UB/TR | Microchip Technology |
Description: TRANS NPN 150V 0.3A UB Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UB Grade: Military Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 500 mW Qualification: MIL-PRF-19500/366 |
товар відсутній |
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JANS2N3501L | Microchip Technology |
Description: TRANS NPN 150V 0.3A TO5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-5AA Grade: Military Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 1 W Qualification: MIL-PRF-19500/366 |
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JANSL2N3501UB/TR | Microchip Technology |
Description: TRANS NPN 150V 0.3A UB Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UB Grade: Military Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 500 mW Qualification: MIL-PRF-19500/366 |
товар відсутній |
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JANSM2N3501UB/TR | Microchip Technology |
Description: TRANS NPN 150V 0.3A UB Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UB Grade: Military Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 500 mW Qualification: MIL-PRF-19500/366 |
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JANSP2N3501UB/TR | Microchip Technology |
Description: TRANS NPN 150V 0.3A UB Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UB Grade: Military Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 500 mW Qualification: MIL-PRF-19500/366 |
товар відсутній |
| DSC6111JI1B-019.2000T |
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Виробник: Microchip Technology
Description: MEMS OSC., ULTRA LOW POWER, LVCM
Packaging: Strip
Package / Case: 4-VLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.71V ~ 3.63V
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Frequency: 19.2 MHz
Base Resonator: MEMS
Description: MEMS OSC., ULTRA LOW POWER, LVCM
Packaging: Strip
Package / Case: 4-VLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.71V ~ 3.63V
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Frequency: 19.2 MHz
Base Resonator: MEMS
товар відсутній
| DSC6101JI2B-019.2000T |
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Виробник: Microchip Technology
Description: MEMS OSC AUTO LOWPWR -40C-85C
Packaging: Strip
Package / Case: 4-VLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Frequency: 19.2 MHz
Base Resonator: MEMS
Description: MEMS OSC AUTO LOWPWR -40C-85C
Packaging: Strip
Package / Case: 4-VLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Frequency: 19.2 MHz
Base Resonator: MEMS
товар відсутній
| DSC6003JI2B-019.2000T |
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Виробник: Microchip Technology
Description: OSC MEMS LOW PWR LVCMOS
Packaging: Strip
Package / Case: 4-VLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 1.3mA (Typ)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 19.2 MHz
Base Resonator: MEMS
Description: OSC MEMS LOW PWR LVCMOS
Packaging: Strip
Package / Case: 4-VLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 1.3mA (Typ)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 19.2 MHz
Base Resonator: MEMS
товар відсутній
| DSC6011JI2B-019.2000T |
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Виробник: Microchip Technology
Description: MEMS OSC XO LVCMOS SMD
Packaging: Strip
Package / Case: 4-VLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 1.3mA (Typ)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 19.2 MHz
Base Resonator: MEMS
Description: MEMS OSC XO LVCMOS SMD
Packaging: Strip
Package / Case: 4-VLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 1.3mA (Typ)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 19.2 MHz
Base Resonator: MEMS
товар відсутній
| DSC6101MI1B-019.2000T |
|
Виробник: Microchip Technology
Description: MEMS OSC AUTO LOWPWR -40C-85C
Packaging: Strip
Package / Case: 4-VFLGA
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.71V ~ 3.63V
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Frequency: 19.2 MHz
Base Resonator: MEMS
Description: MEMS OSC AUTO LOWPWR -40C-85C
Packaging: Strip
Package / Case: 4-VFLGA
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.71V ~ 3.63V
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Frequency: 19.2 MHz
Base Resonator: MEMS
товар відсутній
| DSC6101MA3B-019.2000T |
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Виробник: Microchip Technology
Description: MEMS OSC 2016 20PPM
Packaging: Strip
Package / Case: 4-VFLGA
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±20ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Frequency: 19.2 MHz
Base Resonator: MEMS
Description: MEMS OSC 2016 20PPM
Packaging: Strip
Package / Case: 4-VFLGA
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±20ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Frequency: 19.2 MHz
Base Resonator: MEMS
товар відсутній
| DSC6011MI2B-019.2000T |
|
Виробник: Microchip Technology
Description: MEMS OSCILLATOR, ULTRA LOW POWER
Packaging: Strip
Package / Case: 4-VFLGA
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 1.3mA (Typ)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 19.2 MHz
Base Resonator: MEMS
Description: MEMS OSCILLATOR, ULTRA LOW POWER
Packaging: Strip
Package / Case: 4-VFLGA
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 1.3mA (Typ)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 19.2 MHz
Base Resonator: MEMS
товар відсутній
| CDLL4916A |
|
Виробник: Microchip Technology
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 19.2 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 15 µA @ 12 V
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 19.2 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 15 µA @ 12 V
товар відсутній
| CDLL4916A/TR |
|
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Zener (Nom) (Vz): 19.2 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 15 µA @ 12 V
Description: DIODE ZENER TEMP COMPENSATED
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Zener (Nom) (Vz): 19.2 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 15 µA @ 12 V
товар відсутній
| CDLL4916 |
|
Виробник: Microchip Technology
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 19.2 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 15 µA @ 12 V
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 19.2 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 15 µA @ 12 V
товар відсутній
| CDLL4916/TR |
|
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 100°C
Voltage - Zener (Nom) (Vz): 19.2 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 15 µA @ 12 V
Description: DIODE ZENER TEMP COMPENSATED
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 100°C
Voltage - Zener (Nom) (Vz): 19.2 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 15 µA @ 12 V
товар відсутній
| EV48C78A |
|
Виробник: Microchip Technology
Description: EVALUATION BOARD
Packaging: Bulk
Function: Analog to Digital Converter (ADC)
Type: Data Acquisition
Contents: Board(s)
Utilized IC / Part: MCP3425
Description: EVALUATION BOARD
Packaging: Bulk
Function: Analog to Digital Converter (ADC)
Type: Data Acquisition
Contents: Board(s)
Utilized IC / Part: MCP3425
товар відсутній
| DSC1001DL2-016.3690 |
|
товар відсутній
| DSC1001DL2-016.0000 |
|
товар відсутній
| MIC4467CWM TR |
|
Виробник: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 14ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 4
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.2A, 1.2A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 14ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 4
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.2A, 1.2A
DigiKey Programmable: Not Verified
товар відсутній
| DSPIC33AK256MPS208-E/PT |
товар відсутній
| DSPIC33AK256MPS208T-I/PT |
Виробник: Microchip Technology
Description: 200 MHZ, 256KB FLASH, FUSA-COMPL
Packaging: Tape & Reel (TR)
Description: 200 MHZ, 256KB FLASH, FUSA-COMPL
Packaging: Tape & Reel (TR)
товар відсутній
| DSPIC33AK256MPS208-I/PT |
товар відсутній
| DSPIC33AK512MPS208T-I/PT |
Виробник: Microchip Technology
Description: 200 MHZ, 512KB FLASH, FUSA-COMPL
Packaging: Tape & Reel (TR)
Description: 200 MHZ, 512KB FLASH, FUSA-COMPL
Packaging: Tape & Reel (TR)
товар відсутній
| DSPIC33AK512MPS208-E/PT |
товар відсутній
| DSPIC33AK512MPS208-I/PT |
товар відсутній
| DSC1001BC1-080.0000T |
|
Виробник: Microchip Technology
Description: OSC MEMS AUTO -20C-70C SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: 0°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 16.6mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 80 MHz
Base Resonator: MEMS
Description: OSC MEMS AUTO -20C-70C SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: 0°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 16.6mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 80 MHz
Base Resonator: MEMS
товар відсутній
| M1.5KE7.5A |
|
Виробник: Microchip Technology
Description: TVS DIODE 6.4VWM 11.3VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 132A
Voltage - Reverse Standoff (Typ): 6.4V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.13V
Voltage - Clamping (Max) @ Ipp: 11.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 6.4VWM 11.3VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 132A
Voltage - Reverse Standoff (Typ): 6.4V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.13V
Voltage - Clamping (Max) @ Ipp: 11.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
| JAN1N4110-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 16V DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.2 V
Qualification: MIL-PRF-19500/435
Description: DIODE ZENER 16V DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.2 V
Qualification: MIL-PRF-19500/435
товар відсутній
| JAN1N4111-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 17V DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 13 V
Qualification: MIL-PRF-19500/435
Description: DIODE ZENER 17V DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 13 V
Qualification: MIL-PRF-19500/435
товар відсутній
| JAN1N4111UR-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 17V DO213AA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 13 V
Qualification: MIL-PRF-19500/435
Description: DIODE ZENER 17V DO213AA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 13 V
Qualification: MIL-PRF-19500/435
товар відсутній
| A3PE1500-PQG208 |
|
Виробник: Microchip Technology
Description: IC FPGA 147 I/O 208QFP
Packaging: Tray
Package / Case: 208-BFQFP
Mounting Type: Surface Mount
Number of Gates: 1500000
Operating Temperature: 0°C ~ 85°C (TJ)
Voltage - Supply: 1.425V ~ 1.575V
Supplier Device Package: 208-PQFP (28x28)
Total RAM Bits: 276480
Number of I/O: 147
DigiKey Programmable: Not Verified
Description: IC FPGA 147 I/O 208QFP
Packaging: Tray
Package / Case: 208-BFQFP
Mounting Type: Surface Mount
Number of Gates: 1500000
Operating Temperature: 0°C ~ 85°C (TJ)
Voltage - Supply: 1.425V ~ 1.575V
Supplier Device Package: 208-PQFP (28x28)
Total RAM Bits: 276480
Number of I/O: 147
DigiKey Programmable: Not Verified
на замовлення 26 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 15080.92 грн |
| A3PE1500-PQG208I |
|
Виробник: Microchip Technology
Description: IC FPGA 147 I/O 208QFP
Packaging: Tray
Package / Case: 208-BFQFP
Mounting Type: Surface Mount
Number of Gates: 1500000
Operating Temperature: -40°C ~ 100°C (TJ)
Voltage - Supply: 1.425V ~ 1.575V
Supplier Device Package: 208-PQFP (28x28)
Total RAM Bits: 276480
Number of I/O: 147
DigiKey Programmable: Not Verified
Description: IC FPGA 147 I/O 208QFP
Packaging: Tray
Package / Case: 208-BFQFP
Mounting Type: Surface Mount
Number of Gates: 1500000
Operating Temperature: -40°C ~ 100°C (TJ)
Voltage - Supply: 1.425V ~ 1.575V
Supplier Device Package: 208-PQFP (28x28)
Total RAM Bits: 276480
Number of I/O: 147
DigiKey Programmable: Not Verified
на замовлення 36 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 17577.94 грн |
| CDLL4135E3 |
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 1500 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 76 V
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 1500 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 76 V
товар відсутній
| CDLL4135E3/TR |
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 1500 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 76 V
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 1500 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 76 V
товар відсутній
| CDLL4135/TR |
|
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 1600 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 76 V
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 1600 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 76 V
товар відсутній
| CDLL4135C/TR |
|
товар відсутній
| CDLL4135D/TR |
|
товар відсутній
| CDLL4135D-1E3 |
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 1500 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 76 V
Description: VOLTAGE REGULATOR
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 1500 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 76 V
товар відсутній
| CDLL4135D-1E3/TR |
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 1500 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 76 V
Description: VOLTAGE REGULATOR
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 1500 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 76 V
товар відсутній
| MIC4423CWM |
|
Виробник: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 28ns, 32ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 3A, 3A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 28ns, 32ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 3A, 3A
DigiKey Programmable: Not Verified
товар відсутній
| TWIZ5200 |
|
Виробник: Microchip Technology
Description: BOARD ETH PICTAIL WIZNET W5200
Packaging: Box
Function: Ethernet
Type: Interface
Utilized IC / Part: PICtail™ interface, PICtail Plus™
Supplied Contents: Board(s)
Primary Attributes: 10/100 Base-T with RJ-45 Connector
Description: BOARD ETH PICTAIL WIZNET W5200
Packaging: Box
Function: Ethernet
Type: Interface
Utilized IC / Part: PICtail™ interface, PICtail Plus™
Supplied Contents: Board(s)
Primary Attributes: 10/100 Base-T with RJ-45 Connector
товар відсутній
| AT88RF04C-MVA1 |
|
Виробник: Microchip Technology
Description: RFID TAG R/W 13.56MHZ INLAY
Packaging: Tape & Reel (TR)
Size / Dimension: 0.712" L x 0.338" W (18.10mm x 8.60mm)
Style: Inlay
Frequency: 13.56MHz
Memory Type: Read/Write
Operating Temperature: -40°C ~ 85°C
Technology: Passive
Standards: ISO 14443
Writable Memory: 4kb (User)
Description: RFID TAG R/W 13.56MHZ INLAY
Packaging: Tape & Reel (TR)
Size / Dimension: 0.712" L x 0.338" W (18.10mm x 8.60mm)
Style: Inlay
Frequency: 13.56MHz
Memory Type: Read/Write
Operating Temperature: -40°C ~ 85°C
Technology: Passive
Standards: ISO 14443
Writable Memory: 4kb (User)
товар відсутній
| AT88RF04C-MVA1 |
|
Виробник: Microchip Technology
Description: RFID TAG R/W 13.56MHZ INLAY
Packaging: Cut Tape (CT)
Size / Dimension: 0.712" L x 0.338" W (18.10mm x 8.60mm)
Style: Inlay
Frequency: 13.56MHz
Memory Type: Read/Write
Operating Temperature: -40°C ~ 85°C
Technology: Passive
Standards: ISO 14443
Writable Memory: 4kb (User)
Description: RFID TAG R/W 13.56MHZ INLAY
Packaging: Cut Tape (CT)
Size / Dimension: 0.712" L x 0.338" W (18.10mm x 8.60mm)
Style: Inlay
Frequency: 13.56MHz
Memory Type: Read/Write
Operating Temperature: -40°C ~ 85°C
Technology: Passive
Standards: ISO 14443
Writable Memory: 4kb (User)
товар відсутній
| ATSAM4LC4AA-AU |
|
Виробник: Microchip Technology
Description: IC MCU 32BIT 256KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 3x12b; D/A 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.68V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 27
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 256KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 3x12b; D/A 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.68V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 27
DigiKey Programmable: Not Verified
на замовлення 120 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 179.48 грн |
| ATSAM4LC4AA-AU |
|
Виробник: Microchip Technology
Description: IC MCU 32BIT 256KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 3x12b; D/A 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.68V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 27
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 256KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 3x12b; D/A 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.68V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 27
DigiKey Programmable: Not Verified
товар відсутній
| UTR2350 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 500V 2A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 350 ns
Technology: Standard
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 500 V
Description: DIODE GEN PURP 500V 2A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 350 ns
Technology: Standard
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 500 V
товар відсутній
| UTR2320 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 2A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 320pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 2A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 320pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
| UTR2310 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 2A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 400pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GEN PURP 100V 2A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 400pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
| UTR2305 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 2A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 600pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: DIODE GEN PURP 50V 2A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 600pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
| DSC1001AL2-125.0000T |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 125.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 16.6mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 125 MHz
Base Resonator: MEMS
Description: MEMS OSC XO 125.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 16.6mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 125 MHz
Base Resonator: MEMS
товар відсутній
| MNS2N3501P |
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
Description: TRANS NPN 150V 0.3A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
товар відсутній
| 2N3501e3 |
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Description: TRANS NPN 150V 0.3A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
товар відсутній
| MNS2N3501UBP |
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
Description: TRANS NPN 150V 0.3A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
товар відсутній
| MNS2N3501UBP/TR |
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
Description: TRANS NPN 150V 0.3A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
товар відсутній
| 2N3501UB/TR |
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
товар відсутній
| JAN2N3501UB/TR |
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
товар відсутній
| JANTX2N3501UB/TR |
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
товар відсутній
| JANTXV2N3501UB/TR |
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
товар відсутній
| JANS2N3501UB |
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
Description: TRANS NPN 150V 0.3A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
товар відсутній
| JANS2N3501UB/TR |
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
товар відсутній
| JANS2N3501L |
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
Description: TRANS NPN 150V 0.3A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
товар відсутній
| JANSL2N3501UB/TR |
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
товар відсутній
| JANSM2N3501UB/TR |
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
товар відсутній
| JANSP2N3501UB/TR |
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
товар відсутній