Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (354031) > Сторінка 1826 з 5901

Обрати Сторінку:    << Попередня Сторінка ]  1 590 1180 1770 1821 1822 1823 1824 1825 1826 1827 1828 1829 1830 1831 2360 2950 3540 4130 4720 5310 5900 5901  Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
без ПДВ
DSC6111JI1B-019.2000T DSC6111JI1B-019.2000T Microchip Technology DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155.pdf Description: MEMS OSC., ULTRA LOW POWER, LVCM
Packaging: Strip
Package / Case: 4-VLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.71V ~ 3.63V
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Frequency: 19.2 MHz
Base Resonator: MEMS
товар відсутній
DSC6101JI2B-019.2000T DSC6101JI2B-019.2000T Microchip Technology DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155.pdf Description: MEMS OSC AUTO LOWPWR -40C-85C
Packaging: Strip
Package / Case: 4-VLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Frequency: 19.2 MHz
Base Resonator: MEMS
товар відсутній
DSC6003JI2B-019.2000T DSC6003JI2B-019.2000T Microchip Technology DSC60xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006133.pdf Description: OSC MEMS LOW PWR LVCMOS
Packaging: Strip
Package / Case: 4-VLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 1.3mA (Typ)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 19.2 MHz
Base Resonator: MEMS
товар відсутній
DSC6011JI2B-019.2000T DSC6011JI2B-019.2000T Microchip Technology DSC60xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006133.pdf Description: MEMS OSC XO LVCMOS SMD
Packaging: Strip
Package / Case: 4-VLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 1.3mA (Typ)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 19.2 MHz
Base Resonator: MEMS
товар відсутній
DSC6101MI1B-019.2000T DSC6101MI1B-019.2000T Microchip Technology DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155.pdf Description: MEMS OSC AUTO LOWPWR -40C-85C
Packaging: Strip
Package / Case: 4-VFLGA
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.71V ~ 3.63V
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Frequency: 19.2 MHz
Base Resonator: MEMS
товар відсутній
DSC6101MA3B-019.2000T DSC6101MA3B-019.2000T Microchip Technology DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155.pdf Description: MEMS OSC 2016 20PPM
Packaging: Strip
Package / Case: 4-VFLGA
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±20ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Frequency: 19.2 MHz
Base Resonator: MEMS
товар відсутній
DSC6011MI2B-019.2000T DSC6011MI2B-019.2000T Microchip Technology DSC60xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006133.pdf Description: MEMS OSCILLATOR, ULTRA LOW POWER
Packaging: Strip
Package / Case: 4-VFLGA
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 1.3mA (Typ)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 19.2 MHz
Base Resonator: MEMS
товар відсутній
CDLL4916A Microchip Technology 8393-cdll4916-4932a-datasheet Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 19.2 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 15 µA @ 12 V
товар відсутній
CDLL4916A/TR Microchip Technology 8393-cdll4916-4932a-datasheet Description: DIODE ZENER TEMP COMPENSATED
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Zener (Nom) (Vz): 19.2 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 15 µA @ 12 V
товар відсутній
CDLL4916 Microchip Technology 8393-cdll4916-4932a-datasheet Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 19.2 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 15 µA @ 12 V
товар відсутній
CDLL4916/TR Microchip Technology 8393-cdll4916-4932a-datasheet Description: DIODE ZENER TEMP COMPENSATED
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 100°C
Voltage - Zener (Nom) (Vz): 19.2 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 15 µA @ 12 V
товар відсутній
EV48C78A Microchip Technology MCP3421-MCP3422-MCP3425-SOT-23-6-Evaluation-Board-User-Guide-DS50003483.pdf Description: EVALUATION BOARD
Packaging: Bulk
Function: Analog to Digital Converter (ADC)
Type: Data Acquisition
Contents: Board(s)
Utilized IC / Part: MCP3425
товар відсутній
DSC1001DL2-016.3690 Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: MEMS OSC XO 13.5600MHZ CMOS SMD
Packaging: Strip
товар відсутній
DSC1001DL2-016.0000 Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: MEMS OSC XO 13.5000MHZ CMOS SMD
Packaging: Strip
товар відсутній
MIC4467CWM TR MIC4467CWM TR Microchip Technology MIC4467-68-69-Quad-1.2A-Peak-Low-Side-MOSFET-Drivers-DS20006614A.pdf Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 14ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 4
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.2A, 1.2A
DigiKey Programmable: Not Verified
товар відсутній
DSPIC33AK256MPS208-E/PT Microchip Technology Description: 200 MHZ, 256KB FLASH, FUSA-COMPL
Packaging: Tray
товар відсутній
DSPIC33AK256MPS208T-I/PT Microchip Technology Description: 200 MHZ, 256KB FLASH, FUSA-COMPL
Packaging: Tape & Reel (TR)
товар відсутній
DSPIC33AK256MPS208-I/PT Microchip Technology Description: 200 MHZ, 256KB FLASH, FUSA-COMPL
Packaging: Tray
товар відсутній
DSPIC33AK512MPS208T-I/PT Microchip Technology Description: 200 MHZ, 512KB FLASH, FUSA-COMPL
Packaging: Tape & Reel (TR)
товар відсутній
DSPIC33AK512MPS208-E/PT Microchip Technology Description: 200 MHZ, 512KB FLASH, FUSA-COMPL
Packaging: Tray
товар відсутній
DSPIC33AK512MPS208-I/PT Microchip Technology Description: 200 MHZ, 512KB FLASH, FUSA-COMPL
Packaging: Tray
товар відсутній
DSC1001BC1-080.0000T DSC1001BC1-080.0000T Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: OSC MEMS AUTO -20C-70C SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: 0°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 16.6mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 80 MHz
Base Resonator: MEMS
товар відсутній
M1.5KE7.5A Microchip Technology 9459-m1-5ke-datasheet Description: TVS DIODE 6.4VWM 11.3VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 132A
Voltage - Reverse Standoff (Typ): 6.4V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.13V
Voltage - Clamping (Max) @ Ipp: 11.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
JAN1N4110-1 JAN1N4110-1 Microchip Technology 129734-lds-0245-2-datasheet Description: DIODE ZENER 16V DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.2 V
Qualification: MIL-PRF-19500/435
товар відсутній
JAN1N4111-1 JAN1N4111-1 Microchip Technology 129734-lds-0245-2-datasheet Description: DIODE ZENER 17V DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 13 V
Qualification: MIL-PRF-19500/435
товар відсутній
JAN1N4111UR-1 Microchip Technology 5801-lds-0245-datasheet Description: DIODE ZENER 17V DO213AA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 13 V
Qualification: MIL-PRF-19500/435
товар відсутній
A3PE1500-PQG208 A3PE1500-PQG208 Microchip Technology 130701-ds0098-proasic3e-flash-family-fpgas-datasheet Description: IC FPGA 147 I/O 208QFP
Packaging: Tray
Package / Case: 208-BFQFP
Mounting Type: Surface Mount
Number of Gates: 1500000
Operating Temperature: 0°C ~ 85°C (TJ)
Voltage - Supply: 1.425V ~ 1.575V
Supplier Device Package: 208-PQFP (28x28)
Total RAM Bits: 276480
Number of I/O: 147
DigiKey Programmable: Not Verified
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
1+15080.92 грн
A3PE1500-PQG208I A3PE1500-PQG208I Microchip Technology 130701-ds0098-proasic3e-flash-family-fpgas-datasheet Description: IC FPGA 147 I/O 208QFP
Packaging: Tray
Package / Case: 208-BFQFP
Mounting Type: Surface Mount
Number of Gates: 1500000
Operating Temperature: -40°C ~ 100°C (TJ)
Voltage - Supply: 1.425V ~ 1.575V
Supplier Device Package: 208-PQFP (28x28)
Total RAM Bits: 276480
Number of I/O: 147
DigiKey Programmable: Not Verified
на замовлення 36 шт:
термін постачання 21-31 дні (днів)
1+17577.94 грн
CDLL4135E3 Microchip Technology Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 1500 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 76 V
товар відсутній
CDLL4135E3/TR Microchip Technology Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 1500 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 76 V
товар відсутній
CDLL4135/TR CDLL4135/TR Microchip Technology 5801-lds-0245-datasheet Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 1600 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 76 V
товар відсутній
CDLL4135C/TR Microchip Technology 5801-lds-0245-datasheet Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
товар відсутній
CDLL4135D/TR Microchip Technology 5801-lds-0245-datasheet Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
товар відсутній
CDLL4135D-1E3 Microchip Technology Description: VOLTAGE REGULATOR
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 1500 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 76 V
товар відсутній
CDLL4135D-1E3/TR Microchip Technology Description: VOLTAGE REGULATOR
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 1500 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 76 V
товар відсутній
MIC4423CWM MIC4423CWM Microchip Technology MIC4423-4-5-Dual-3A-Peak-Low-Side-MOSFET-Drivers-DS20006638A.pdf Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 28ns, 32ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 3A, 3A
DigiKey Programmable: Not Verified
товар відсутній
TWIZ5200 TWIZ5200 Microchip Technology TWIZ5200_Web.pdf Description: BOARD ETH PICTAIL WIZNET W5200
Packaging: Box
Function: Ethernet
Type: Interface
Utilized IC / Part: PICtail™ interface, PICtail Plus™
Supplied Contents: Board(s)
Primary Attributes: 10/100 Base-T with RJ-45 Connector
товар відсутній
AT88RF04C-MVA1 AT88RF04C-MVA1 Microchip Technology Atmel-8672S-CryptoRF-AT88RF04C-Datasheet-Summary.pdf Description: RFID TAG R/W 13.56MHZ INLAY
Packaging: Tape & Reel (TR)
Size / Dimension: 0.712" L x 0.338" W (18.10mm x 8.60mm)
Style: Inlay
Frequency: 13.56MHz
Memory Type: Read/Write
Operating Temperature: -40°C ~ 85°C
Technology: Passive
Standards: ISO 14443
Writable Memory: 4kb (User)
товар відсутній
AT88RF04C-MVA1 AT88RF04C-MVA1 Microchip Technology Atmel-8672S-CryptoRF-AT88RF04C-Datasheet-Summary.pdf Description: RFID TAG R/W 13.56MHZ INLAY
Packaging: Cut Tape (CT)
Size / Dimension: 0.712" L x 0.338" W (18.10mm x 8.60mm)
Style: Inlay
Frequency: 13.56MHz
Memory Type: Read/Write
Operating Temperature: -40°C ~ 85°C
Technology: Passive
Standards: ISO 14443
Writable Memory: 4kb (User)
товар відсутній
ATSAM4LC4AA-AU ATSAM4LC4AA-AU Microchip Technology Atmel-42023-ARM-Microcontroller-ATSAM4L-Low-Power-LCD_Datasheet-Summary.pdf Description: IC MCU 32BIT 256KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 3x12b; D/A 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.68V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 27
DigiKey Programmable: Not Verified
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
2+179.48 грн
Мінімальне замовлення: 2
ATSAM4LC4AA-AU ATSAM4LC4AA-AU Microchip Technology Atmel-42023-ARM-Microcontroller-ATSAM4L-Low-Power-LCD_Datasheet-Summary.pdf Description: IC MCU 32BIT 256KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 3x12b; D/A 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.68V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 27
DigiKey Programmable: Not Verified
товар відсутній
UTR2350 UTR2350 Microchip Technology Description: DIODE GEN PURP 500V 2A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 350 ns
Technology: Standard
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 500 V
товар відсутній
UTR2320 UTR2320 Microchip Technology Description: DIODE GEN PURP 200V 2A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 320pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
UTR2310 UTR2310 Microchip Technology Description: DIODE GEN PURP 100V 2A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 400pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
UTR2305 UTR2305 Microchip Technology Description: DIODE GEN PURP 50V 2A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 600pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
DSC1001AL2-125.0000T DSC1001AL2-125.0000T Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: MEMS OSC XO 125.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 16.6mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 125 MHz
Base Resonator: MEMS
товар відсутній
MNS2N3501P MNS2N3501P Microchip Technology Description: TRANS NPN 150V 0.3A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
товар відсутній
2N3501e3 2N3501e3 Microchip Technology Description: TRANS NPN 150V 0.3A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
товар відсутній
MNS2N3501UBP MNS2N3501UBP Microchip Technology Description: TRANS NPN 150V 0.3A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
товар відсутній
MNS2N3501UBP/TR MNS2N3501UBP/TR Microchip Technology Description: TRANS NPN 150V 0.3A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
товар відсутній
2N3501UB/TR 2N3501UB/TR Microchip Technology Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
товар відсутній
JAN2N3501UB/TR JAN2N3501UB/TR Microchip Technology Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
товар відсутній
JANTX2N3501UB/TR JANTX2N3501UB/TR Microchip Technology Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
товар відсутній
JANTXV2N3501UB/TR JANTXV2N3501UB/TR Microchip Technology Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
товар відсутній
JANS2N3501UB JANS2N3501UB Microchip Technology Description: TRANS NPN 150V 0.3A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
товар відсутній
JANS2N3501UB/TR JANS2N3501UB/TR Microchip Technology Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
товар відсутній
JANS2N3501L JANS2N3501L Microchip Technology Description: TRANS NPN 150V 0.3A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
товар відсутній
JANSL2N3501UB/TR JANSL2N3501UB/TR Microchip Technology Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
товар відсутній
JANSM2N3501UB/TR JANSM2N3501UB/TR Microchip Technology Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
товар відсутній
JANSP2N3501UB/TR JANSP2N3501UB/TR Microchip Technology Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
товар відсутній
DSC6111JI1B-019.2000T DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155.pdf
DSC6111JI1B-019.2000T
Виробник: Microchip Technology
Description: MEMS OSC., ULTRA LOW POWER, LVCM
Packaging: Strip
Package / Case: 4-VLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.71V ~ 3.63V
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Frequency: 19.2 MHz
Base Resonator: MEMS
товар відсутній
DSC6101JI2B-019.2000T DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155.pdf
DSC6101JI2B-019.2000T
Виробник: Microchip Technology
Description: MEMS OSC AUTO LOWPWR -40C-85C
Packaging: Strip
Package / Case: 4-VLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Frequency: 19.2 MHz
Base Resonator: MEMS
товар відсутній
DSC6003JI2B-019.2000T DSC60xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006133.pdf
DSC6003JI2B-019.2000T
Виробник: Microchip Technology
Description: OSC MEMS LOW PWR LVCMOS
Packaging: Strip
Package / Case: 4-VLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 1.3mA (Typ)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 19.2 MHz
Base Resonator: MEMS
товар відсутній
DSC6011JI2B-019.2000T DSC60xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006133.pdf
DSC6011JI2B-019.2000T
Виробник: Microchip Technology
Description: MEMS OSC XO LVCMOS SMD
Packaging: Strip
Package / Case: 4-VLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 1.3mA (Typ)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 19.2 MHz
Base Resonator: MEMS
товар відсутній
DSC6101MI1B-019.2000T DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155.pdf
DSC6101MI1B-019.2000T
Виробник: Microchip Technology
Description: MEMS OSC AUTO LOWPWR -40C-85C
Packaging: Strip
Package / Case: 4-VFLGA
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.71V ~ 3.63V
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Frequency: 19.2 MHz
Base Resonator: MEMS
товар відсутній
DSC6101MA3B-019.2000T DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155.pdf
DSC6101MA3B-019.2000T
Виробник: Microchip Technology
Description: MEMS OSC 2016 20PPM
Packaging: Strip
Package / Case: 4-VFLGA
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±20ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Frequency: 19.2 MHz
Base Resonator: MEMS
товар відсутній
DSC6011MI2B-019.2000T DSC60xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006133.pdf
DSC6011MI2B-019.2000T
Виробник: Microchip Technology
Description: MEMS OSCILLATOR, ULTRA LOW POWER
Packaging: Strip
Package / Case: 4-VFLGA
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 1.3mA (Typ)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 19.2 MHz
Base Resonator: MEMS
товар відсутній
CDLL4916A 8393-cdll4916-4932a-datasheet
Виробник: Microchip Technology
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 19.2 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 15 µA @ 12 V
товар відсутній
CDLL4916A/TR 8393-cdll4916-4932a-datasheet
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Zener (Nom) (Vz): 19.2 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 15 µA @ 12 V
товар відсутній
CDLL4916 8393-cdll4916-4932a-datasheet
Виробник: Microchip Technology
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 19.2 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 15 µA @ 12 V
товар відсутній
CDLL4916/TR 8393-cdll4916-4932a-datasheet
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 100°C
Voltage - Zener (Nom) (Vz): 19.2 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 15 µA @ 12 V
товар відсутній
EV48C78A MCP3421-MCP3422-MCP3425-SOT-23-6-Evaluation-Board-User-Guide-DS50003483.pdf
Виробник: Microchip Technology
Description: EVALUATION BOARD
Packaging: Bulk
Function: Analog to Digital Converter (ADC)
Type: Data Acquisition
Contents: Board(s)
Utilized IC / Part: MCP3425
товар відсутній
DSC1001DL2-016.3690 DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
Виробник: Microchip Technology
Description: MEMS OSC XO 13.5600MHZ CMOS SMD
Packaging: Strip
товар відсутній
DSC1001DL2-016.0000 DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
Виробник: Microchip Technology
Description: MEMS OSC XO 13.5000MHZ CMOS SMD
Packaging: Strip
товар відсутній
MIC4467CWM TR MIC4467-68-69-Quad-1.2A-Peak-Low-Side-MOSFET-Drivers-DS20006614A.pdf
MIC4467CWM TR
Виробник: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 14ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 4
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.2A, 1.2A
DigiKey Programmable: Not Verified
товар відсутній
DSPIC33AK256MPS208-E/PT
Виробник: Microchip Technology
Description: 200 MHZ, 256KB FLASH, FUSA-COMPL
Packaging: Tray
товар відсутній
DSPIC33AK256MPS208T-I/PT
Виробник: Microchip Technology
Description: 200 MHZ, 256KB FLASH, FUSA-COMPL
Packaging: Tape & Reel (TR)
товар відсутній
DSPIC33AK256MPS208-I/PT
Виробник: Microchip Technology
Description: 200 MHZ, 256KB FLASH, FUSA-COMPL
Packaging: Tray
товар відсутній
DSPIC33AK512MPS208T-I/PT
Виробник: Microchip Technology
Description: 200 MHZ, 512KB FLASH, FUSA-COMPL
Packaging: Tape & Reel (TR)
товар відсутній
DSPIC33AK512MPS208-E/PT
Виробник: Microchip Technology
Description: 200 MHZ, 512KB FLASH, FUSA-COMPL
Packaging: Tray
товар відсутній
DSPIC33AK512MPS208-I/PT
Виробник: Microchip Technology
Description: 200 MHZ, 512KB FLASH, FUSA-COMPL
Packaging: Tray
товар відсутній
DSC1001BC1-080.0000T DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
DSC1001BC1-080.0000T
Виробник: Microchip Technology
Description: OSC MEMS AUTO -20C-70C SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: 0°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 16.6mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 80 MHz
Base Resonator: MEMS
товар відсутній
M1.5KE7.5A 9459-m1-5ke-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 6.4VWM 11.3VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 132A
Voltage - Reverse Standoff (Typ): 6.4V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.13V
Voltage - Clamping (Max) @ Ipp: 11.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
JAN1N4110-1 129734-lds-0245-2-datasheet
JAN1N4110-1
Виробник: Microchip Technology
Description: DIODE ZENER 16V DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.2 V
Qualification: MIL-PRF-19500/435
товар відсутній
JAN1N4111-1 129734-lds-0245-2-datasheet
JAN1N4111-1
Виробник: Microchip Technology
Description: DIODE ZENER 17V DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 13 V
Qualification: MIL-PRF-19500/435
товар відсутній
JAN1N4111UR-1 5801-lds-0245-datasheet
Виробник: Microchip Technology
Description: DIODE ZENER 17V DO213AA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 13 V
Qualification: MIL-PRF-19500/435
товар відсутній
A3PE1500-PQG208 130701-ds0098-proasic3e-flash-family-fpgas-datasheet
A3PE1500-PQG208
Виробник: Microchip Technology
Description: IC FPGA 147 I/O 208QFP
Packaging: Tray
Package / Case: 208-BFQFP
Mounting Type: Surface Mount
Number of Gates: 1500000
Operating Temperature: 0°C ~ 85°C (TJ)
Voltage - Supply: 1.425V ~ 1.575V
Supplier Device Package: 208-PQFP (28x28)
Total RAM Bits: 276480
Number of I/O: 147
DigiKey Programmable: Not Verified
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+15080.92 грн
A3PE1500-PQG208I 130701-ds0098-proasic3e-flash-family-fpgas-datasheet
A3PE1500-PQG208I
Виробник: Microchip Technology
Description: IC FPGA 147 I/O 208QFP
Packaging: Tray
Package / Case: 208-BFQFP
Mounting Type: Surface Mount
Number of Gates: 1500000
Operating Temperature: -40°C ~ 100°C (TJ)
Voltage - Supply: 1.425V ~ 1.575V
Supplier Device Package: 208-PQFP (28x28)
Total RAM Bits: 276480
Number of I/O: 147
DigiKey Programmable: Not Verified
на замовлення 36 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+17577.94 грн
CDLL4135E3
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 1500 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 76 V
товар відсутній
CDLL4135E3/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 1500 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 76 V
товар відсутній
CDLL4135/TR 5801-lds-0245-datasheet
CDLL4135/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 1600 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 76 V
товар відсутній
CDLL4135C/TR 5801-lds-0245-datasheet
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
товар відсутній
CDLL4135D/TR 5801-lds-0245-datasheet
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
товар відсутній
CDLL4135D-1E3
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 1500 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 76 V
товар відсутній
CDLL4135D-1E3/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 1500 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 76 V
товар відсутній
MIC4423CWM MIC4423-4-5-Dual-3A-Peak-Low-Side-MOSFET-Drivers-DS20006638A.pdf
MIC4423CWM
Виробник: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 28ns, 32ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 3A, 3A
DigiKey Programmable: Not Verified
товар відсутній
TWIZ5200 TWIZ5200_Web.pdf
TWIZ5200
Виробник: Microchip Technology
Description: BOARD ETH PICTAIL WIZNET W5200
Packaging: Box
Function: Ethernet
Type: Interface
Utilized IC / Part: PICtail™ interface, PICtail Plus™
Supplied Contents: Board(s)
Primary Attributes: 10/100 Base-T with RJ-45 Connector
товар відсутній
AT88RF04C-MVA1 Atmel-8672S-CryptoRF-AT88RF04C-Datasheet-Summary.pdf
AT88RF04C-MVA1
Виробник: Microchip Technology
Description: RFID TAG R/W 13.56MHZ INLAY
Packaging: Tape & Reel (TR)
Size / Dimension: 0.712" L x 0.338" W (18.10mm x 8.60mm)
Style: Inlay
Frequency: 13.56MHz
Memory Type: Read/Write
Operating Temperature: -40°C ~ 85°C
Technology: Passive
Standards: ISO 14443
Writable Memory: 4kb (User)
товар відсутній
AT88RF04C-MVA1 Atmel-8672S-CryptoRF-AT88RF04C-Datasheet-Summary.pdf
AT88RF04C-MVA1
Виробник: Microchip Technology
Description: RFID TAG R/W 13.56MHZ INLAY
Packaging: Cut Tape (CT)
Size / Dimension: 0.712" L x 0.338" W (18.10mm x 8.60mm)
Style: Inlay
Frequency: 13.56MHz
Memory Type: Read/Write
Operating Temperature: -40°C ~ 85°C
Technology: Passive
Standards: ISO 14443
Writable Memory: 4kb (User)
товар відсутній
ATSAM4LC4AA-AU Atmel-42023-ARM-Microcontroller-ATSAM4L-Low-Power-LCD_Datasheet-Summary.pdf
ATSAM4LC4AA-AU
Виробник: Microchip Technology
Description: IC MCU 32BIT 256KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 3x12b; D/A 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.68V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 27
DigiKey Programmable: Not Verified
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+179.48 грн
Мінімальне замовлення: 2
ATSAM4LC4AA-AU Atmel-42023-ARM-Microcontroller-ATSAM4L-Low-Power-LCD_Datasheet-Summary.pdf
ATSAM4LC4AA-AU
Виробник: Microchip Technology
Description: IC MCU 32BIT 256KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 3x12b; D/A 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.68V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 27
DigiKey Programmable: Not Verified
товар відсутній
UTR2350
UTR2350
Виробник: Microchip Technology
Description: DIODE GEN PURP 500V 2A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 350 ns
Technology: Standard
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 500 V
товар відсутній
UTR2320
UTR2320
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 2A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 320pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
UTR2310
UTR2310
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 2A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 400pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
UTR2305
UTR2305
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 2A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 600pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
DSC1001AL2-125.0000T DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
DSC1001AL2-125.0000T
Виробник: Microchip Technology
Description: MEMS OSC XO 125.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 16.6mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 125 MHz
Base Resonator: MEMS
товар відсутній
MNS2N3501P
MNS2N3501P
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
товар відсутній
2N3501e3
2N3501e3
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
товар відсутній
MNS2N3501UBP
MNS2N3501UBP
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
товар відсутній
MNS2N3501UBP/TR
MNS2N3501UBP/TR
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
товар відсутній
2N3501UB/TR
2N3501UB/TR
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
товар відсутній
JAN2N3501UB/TR
JAN2N3501UB/TR
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
товар відсутній
JANTX2N3501UB/TR
JANTX2N3501UB/TR
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
товар відсутній
JANTXV2N3501UB/TR
JANTXV2N3501UB/TR
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
товар відсутній
JANS2N3501UB
JANS2N3501UB
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
товар відсутній
JANS2N3501UB/TR
JANS2N3501UB/TR
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
товар відсутній
JANS2N3501L
JANS2N3501L
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
товар відсутній
JANSL2N3501UB/TR
JANSL2N3501UB/TR
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
товар відсутній
JANSM2N3501UB/TR
JANSM2N3501UB/TR
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
товар відсутній
JANSP2N3501UB/TR
JANSP2N3501UB/TR
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
товар відсутній
Обрати Сторінку:    << Попередня Сторінка ]  1 590 1180 1770 1821 1822 1823 1824 1825 1826 1827 1828 1829 1830 1831 2360 2950 3540 4130 4720 5310 5900 5901  Наступна Сторінка >> ]